YB48 the metal rich boundary of YB66; crystal growth and thermoelectric properties

It was discovered that the well-known higher boride YB₆₆, one of the first reported phonon glass electron crystals (PGEC), could be obtained in a much more metal-rich composition than previously thought possible. Using the floating zone growth method, YB₄₈ single crystals with YB₆₆ crystal structure could be obtained, and their thermoelectric properties measured. This expansion of the homogeneity range of the well-known YB₆₆ compound is surprising and a new Y atomic site was discovered. YB₄₈ exhibits much higher power factors than YB₆₆ which increase rapidly with increasing temperature. The obtained dimensionless figure of merit of this compound at 990 K is approximately 30 times higher than that of previously reported YB₆₆ samples, and higher than any other pristine higher boride. This discovery reveals YB₄₈ as a promising high temperature thermoelectric material.     

Effect of fabrication parameters on the electrical conductivity of YxSr1−xTiO3 for anode materials

Yttrium-doped strontium titanate (Y_xSr_1−xTiO₃), as probable anode material for SOFC, was prepared by solid-state reaction. The solubility of yttrium in SrTiO₃ at different temperatures was examined and the electrical conductivities of Y_xSr_1−xTiO₃ were measured from 500 to 1000 °C. The effects of doping amount, fabrication atmosphere, and sintering temperature on the electrical conductivity of Y_xSr_1−xTiO₃ were investigated. Y_xSr_1−xTiO₃ with x=0.08 was found to give the maximum electrical conductivity, 71 S/cm at 800 °C in pure hydrogen. Reducing atmospheres and appropriate sintering temperatures play a positive role in improving the electrical conductivity.     

Metal-insulator transition in the spinel-type Cu(Ir1−xCrx)2S4 system

A normal thiospinel CuIr₂S₄ exhibits a temperature-induced metal-insulator (M-I) transition around 230 K with structural transformation, showing hysteresis on heating and cooling. On the other hand, CuCr₂S₄ has the same normal spinel structure without the structural transformation. CuCr₂S₄ has been found to be metallic and ferromagnetic with the Curie temperature T_c~377 K. In order to see the effect of substituting Cr for Ir on the M-I transition, we have carried out a systematic experimental study of electrical and magnetic properties of Cu(Ir_1−xCr_x)₂S₄. The M-I transition temperature shifts to lower temperature with increasing Cr-concentration x and this transition is not detected above x~0.05. The ferromagnetic transition temperature decreases as x is decreased and the transition does not occur below x~0.20.     

Structure and low-temperature properties of Ba8Ni6Ge40

Structural, magnetic, heat capacity, electrical and thermal transport properties are reported on polycrystalline Ba₈Ni₆Ge₄₀. Ba₈Ni₆Ge₄₀ crystallizes in a cubic type I clathrate structure with unit cell a=10.5179 (4) Å. It is diamagnetic with susceptibility χ_dia=−1.71×10^-6 emu/g Oe. An Einstein temperature 75 K and a Debye temperature 307 K are estimated from heat capacity data. It exhibits n-type conducting behavior below 300 K. It shows high Seebeck coefficients (−111×10^-6 V/K), low thermal conductivity (2.25 W/K m), and low electrical resistivity (8.8 mΩ cm) at 300 K.     

The effects of annealing on Au/pyronine-B/MD n-InP Schottky structure

Thin film of non-polymeric organic compound pyronine-B has been fabricated on moderately doped (MD) n-InP substrate as an interfacial layer using spin coating technique for the electronic modification of Au/MD n-InP Schottky contact. The electrical characteristics have been determined at room temperature. The barrier height and the ideality factor values for Au/pyronine-B/MD n-InP Schottky diode have been obtained from the forward bias I-V characteristics at room temperature as 0.60 eV and 1.041; 0.571 and 1.253 eV after annealing at 100 and 250 °C, respectively. An increase in annealing temperature at the Au/n-InP Schottky junction is shown to increase the reverse bias leakage current by about one order of magnitude and decrease the Schottky barrier height by 0.027 eV. Furthermore, the barrier height values for the Au/pyronine-B/MD n-InP Schottky diode have also been obtained from the C-V characteristics at room temperature as 1.001 and 0.709 eV after annealing at 100 and 250 °C, respectively. Finally, it was seen that the diode parameters changed with increase in the annealing temperature.     

Defect structure and electrical properties of molybdenum disulphide

Electrical conductivity of molybdenum disulphide was studied in a helium-sulphur gas mixture as a function of temperature (1073-1273 K). It was found that over the whole temperature and sulphur pressure range (10-6600 Pa) studied, the material exhibits p-type conductivity. Based on literature intrinsic electronic disorder data as well as measured electrical conductivity results a defect model has been proposed. This model involves electron holes and doubly ionized interstitial sulphur ions as majority point defects as well as electrons and acceptor-type foreign ions as minority defects.     

Ni-Al layered double hydroxides modified with citrate, malate, and tartrate: Preparation by coprecipitation and uptake of Cu from aqueous solution

We report on aqueous Cu²⁺ uptake by Ni-Al layered double hydroxides (Ni-Al LDHs) modified with citrate (C₆H₅O₇³⁻), malate (C₄H₄O₅²⁻), and tartrate (C₄H₄O₆²⁻) anions via coprecipitation. Dropwise addition of a mixed aqueous solution of Ni(NO₃)₂ and Al(NO₃)₃ to the respective organic acid solutions at a constant pH of 7.0-9.0 afforded LDHs with intercalated C₆H₅O₇³⁻ and Ni(C₆H₅O₇⁾⁻, C₄H₄O₅²⁻, and C₄H₄O₆²⁻ in their interlayers. The anions were also likely adsorbed on the LDH surface. Citrate·Ni-Al LDH could rapidly take up Cu²⁺ at a constant pH of 5.0, mainly via chelation by the intercalated and adsorbed anions, rather than coprecipitation with dissolved Al³⁺ to form Cu-Al LDH. By contrast, malate and tartrate were not active as chelating agents, probably because they formed bridges between brucite-like layers by direct coordination of the two −COO⁻ groups with Al³⁺ in those layers.     

The effect of Fe substitution on the electrical and thermal conductivity and thermopower of Ca3(FexCo1−x)4O9 synthesised by a sol–gel process

The effect of Fe substitution for Co on direct current (DC) electrical and thermal conductivity and thermopower of Ca₃(Co_1−xFe_x)₄O₉ (x = 0, 0.05, 0.08), prepared by a sol–gel process, was investigated in the temperature range from 380 down to 5K. The results indicate that the substitution of Fe for Co results in an increase in thermopower and DC electrical resistivity and substantial (14.9–20.4% at 300K) decrease in lattice thermal conductivity. Experiments also indicated that the temperature dependence of electrical resistivity ρ for heavily substituted compounds Ca₃(Co_1−xFe_x)₄O₉ (x = 0.08) obeyed the relation lnρ ∝ T^−1/3 at low temperatures, T < ~55K, in agreement with Mott’s two-dimensional (2D) variable range hopping model. The enhancement of thermopower and electrical resistivity was mainly ascribed to a decrease in hole carrier concentration caused by Fe substitution, while the decrease of thermal conductivity can be explained as phonon scattering caused by the impurity. The thermoelectric performance of Ca₃Co₄O₉ was not improved in the temperature range investigated by Fe substitution largely due to great increase in electrical resistivity after Fe substitution.     

Study of phase transition in ZrO2 doped with Pb3O4

Electrical conductivity of ZrO₂ doped with Pb₃O₄ has been measured at different temperatures for different molar ratios (x=0, 0.01, 0.02, 0.03, 0.04, 0.05 and 0.06). The conductivity increases due to migration of vacancies, created by doping. The conductivity increases with increase in temperature till 180 °C and thereby decreases due to collapse of the fluorite framework. A second rise in conductivity at higher temperatures beyond 500-618 °C is due to phase transition of ZrO₂. DTA and X-ray powder diffraction were carried out for confirming doping effect and transition in ZrO₂.The addition of Pb₃O₄ to ZrO₂ shifted the phase transition of ZrO₂ due to the interaction between Pb₃O₄ and ZrO₂.     

Effect of varying mixture ratio of raw material powders on the thermoelectric properties of AlMgB14-based materials prepared by spark plasma sintering

Thermoelectric properties of AlMgB₁₄-based materials prepared by spark plasma sintering were investigated. Al, Mg, and B powders were used as raw material powders. The raw powders were mixed using a V-shaped mixer, and then the mixture was sintered at 1673 K or 1773 K. The mixture ratio of raw powders was varied around stoichiometric ratio of AlMgB₁₄. X-ray diffraction patterns of samples showed that all samples consist of AlMgB₁₄ and MgAl₂O₄. The Seebeck coefficient of the samples exhibited significant change depending on the varying mixture ratio and sintering temperature. One sample exhibited a large negative value for the Seebeck coefficient (approximately −500 μV/K) in the temperature range from 573 K to 1073 K, while others showed positive value (250–450 μV/K). Thus n-type AlMgB₁₄-based material has been realized by varying raw material ratio and sintering temperature.     

Low-density carbon material modified with pyrolytic carbon

Here we report a physicochemical investigation of low-density carbon materials modified with pyrolytic carbon (PC). Exfoliated graphite (EG) obtained by nitrate expandable graphite thermal destruction was pressed into low-density graphite materials (LDGMs) with densities of 0.045-0.50 g/cm³ and saturated with PC by impact CVI technique. LDGM infiltration with PC leads to sample weight and density growth. The amount of deposited PC strictly depends on synthesis conditions. The maximum surface and volume deposition of PC occurred for samples with density of 0.05 g/cm³. XRD, Raman spectroscopy and scanning electron microscopy revealed that the deposited PC is of smooth laminar (SL) type. Composite thermal conductivity is about 2-3.5 Wt/m K.     

Time series of ac conductivities of terbium nitrate crystals at low temperatures

Time series of ac conductivities are measured at 2 kHz along three crystal directions in terbium nitrate crystal below 50 K. The anisotropy is found in the structure of the fluctuation observed in the time series of the conductivities. The bursts with non-periodic oscillations are found in only the measurements of the time series of the ac conductivities for one direction perpendicular to the c-axis (c2-axis). The anisotropy is seen in probability distribution functions and power spectral ones derived from the time series of the conductivities. The characteristic behaviors are found in the time series of the conductivity for the one crystal direction perpendicular to the c-axis. Asymmetric non-Gaussian line shape of the probability distribution function is seen for the c2-axis. Chaotic behavior is also found in the function of the correlation exponent to the embedding dimension derived from the time series of the conductivities.     

Galvanomagnetic properties of air-stable and highly conductive potassium-intercalated graphite sheet

Magnetoresistance and Hall coefficient of air-stable potassium-intercalated graphite sheets (hereafter abbreviated as K-PGS) were determined at room temperature. The magnitude of the magnetoresistance and the absolute value of Hall coefficient of K-PGS decreased with increasing potassium content of K-PGS, n_K/n_C. Two-carrier model was used for calculating carrier density and mobility. The electron density increased with increasing n_K/n_C: 3.07×10²⁰ cm⁻³ (n_K/n_C=0.005), 5.67×10²⁰ cm⁻³ (n_K/n_C=0.008) and 6.40×10²⁰ cm⁻³ (n_K/n_C=0.011). The value of the electron density of K-PGS with n_K/n_C=0.011 (nominal composition KC₉₁) was about 80% of the reported value, 7.8×10²⁰ cm⁻³, for KC₄₈ (n_K/n_C=0.021) prepared from HOPG (highly oriented pyrolytic graphite). The mobility decreased with increasing n_K/n_C: 2.11×10³ cm² V⁻¹ s⁻¹ (n_K/n_C=0.005), 1.42×10³ cm² V⁻¹ s⁻¹ (n_K/n_C=0.008) and 1.34×10³ cm² V⁻¹ s⁻¹ (n_K/n_C=0.011). The value of the mobility of K-PGS with n_K/n_C=0.011 was about 60% of the reported value (2300 cm² V⁻¹ s⁻¹) for KC₄₈ prepared from HOPG.     

Preparation of organic acid anion-modified magnesium hydroxides by coprecipitation: A novel material for the uptake of heavy metal ions from aqueous solutions

New layered magnesium hydroxides whose brucite layers had been bridged with malate²⁻ and tartrate²⁻ were prepared by dropwise addition of Mg(NO₃)₂ to malate and tartrate solutions at a constant pH of 10.5. Malate²⁻ and tartrate²⁻ may have been also absorbed on the surfaces of hydroxides. In the case of using citrate solution, Mg(OH)₂ absorbed with citrate³⁻ was produced. These materials were found to take up Cu²⁺ rapidly from an aqueous solution at pH 5.0. Copper uptake by precipitates is attributed to the formation of chelate complexes of Cu²⁺ with citrate³⁻, malate²⁻, and tartrate²⁻.     

Temperature dependence of electrical resistivity for Ca-doped perovskite-type Y1−xCaxCoO3 prepared by sol-gel process

The temperature dependences of DC electrical resistivity for perovskite-type oxides Y_1−xCa_xCoO₃ (0?x?0.1), prepared by sol-gel process, were investigated in the temperature range from 20 K up to 305 K. The results indicated that with increase of doping content of Ca the resistivity of Y_1−xCa_xCoO₃ decreased remarkably, which was found to be caused mainly by increase of carrier (hole) concentration. In the whole temperature range investigated the temperature dependence of resistivity ρ(T) for the un-doped (x=0) sample decreased exponentially with decreasing temperature (i.e. ln ρ∝1/T), with a conduction activation energy ; the resisitivity of lightly doped oxide (x=0.01) possessed a similar temperature behavior but has a reduced E_a (0.155 eV). Moreover, experiments showed that the relationship ln ρ∝1/T existed only in high-temperature regime for the heavily doped samples (T?82 and ∼89 K for x=0.05 and 0.1, respectively); at low temperatures Mott's ln ρ∝T^−1/4 law was observed, indicating that heavy doping produced strong random potential, which led to formation of considerable localized states. By fitting of the experimental data to Mott's T^−1/4 law, we estimated the density of localized states N(E_F) at the Fermi level, which was found to increase with increasing doping content.     

Self-assembled CaMoO4 and CaMoO4:Eu hierarchical superstructures: Facile sonochemical route synthesis and tunable luminescent properties

Tetragonal CaMoO₄ and CaMoO₄:Eu³⁺ with various novel three-dimensional (3D) hierarchical architectures were successfully synthesized via a facile, efficient sonochemistry process in the absence of any surfactant or template. XRD, EDS, FE-SEM, and photoluminescence (PL) were employed to characterize the as-obtained products. It was found that morphology modulation could be easily realized by changing pH value of the precursor. The pH value of the precursor not only affected the substructures of the hierarchical structures, but also determined the size distributions of the final products. The formation mechanism for different hierarchical architectures was proposed on the basis of time-dependent experiments. The luminescence spectra showed that CaMoO₄:Eu³⁺ phosphors can be effectively excited by the near ultraviolet (UV) (396 nm) and blue (466 nm) light, and exhibited strong red emission around 615 nm, which was attributed to the Eu³⁺⁵D₀→⁷F₂ transition. Compared with Y₂O₃:Eu³⁺ phosphor, CaMoO₄:Eu³⁺ is much more stable, efficient and suitable, therefore, this phosphors could be a promising red component for possible applications in the field of LEDs.     

Effect of Bi-doping and Mg-excess on the thermoelectric properties of Mg2Si materials

In this work, Bi-doped magnesium silicide compounds were prepared by applying a combination of both, short-time ball milling and heating treatment. The effect of Mg excess was also studied, aiming towards further improvement in thermoelectric properties. The structural modifications of all materials were followed by Powder X-ray diffraction and Scanning Electron Microscopy. Highly dense pellets of Mg₂Si_1−xBi_x (0≤x≤0.035) and Mg_2+δSi_0.975Bi_0.025 (δ=0.04, 0.06 and 0.12) were fabricated via hot pressing and studied in terms of Seebeck coefficient, electrical and thermal conductivities and free carrier concentration. Their thermoelectric performance, at high temperature range, is presented and the maximum value of the dimensionless-figure-of-merit (ZT) is found to be 0.68 at 810 K, for Mg₂Si_0.97Bi_0.03.     

Thermoelectric properties of Ge-doped Bi85Sb15 alloys at low temperatures

Bulk polycrystalline Bi₈₅Sb_15−xGe_x (x=0, 0.5, 1, 1.5, 2) composites were prepared by mechanical alloying followed by pressureless sintering. The thermoelectric properties were studied in the temperature range of 77–300 K. The results indicate that increasing the Ge concentration causes the Seebeck coefficient to change sign from negative to positive. Moreover, it is found that the maximum value of the Seebeck coefficient can be precisely controlled with the Ge concentration. The maximum dimensionless figure of merit reaches 0.07 at 140 K. These results suggest that the preparation of p-type Bi–Sb alloys is possible by using the Ge-doping approach.     

Preparation and mechanism of formation of hematite particles in the Fe-HNO3 system

The mechanism of formation of hematite particles in the Fe-HNO₃ system is investigated by introduction of a small amount of PO₄³⁻ ions to the system. The intermediate species in the reaction, 6-line ferrihydrite, is successfully obtained. The transformation of 6-line ferrihydrite to hematite is investigated. The results show that Fe(II) in the Fe-HNO₃ system can catalyze the dissolution of 6-line ferrihydrite, leading to the rapid formation of hematite.