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1.
ZnSe/CdSe/ZnSe structures inserted CdSe thin layer are fabricated using an alternate molecular beam supply (ALS). Examining the PL peak energy dependence on beam irradiation time in ALS cycle, we studied the initial stage of CdSe growth. When CdSe below the critical thickness is supplied on ZnSe grown on GaAs (1 0 0), two kinds of 2D islands (platelets) appear. We confirmed the alloying of 2D-CdSe islands and 3D-CdSe islands (dots) is prominent under Cd beam irradiation in ALS growth. 相似文献
2.
We report a novel method of growing red luminescent (635 nm) Mn-doped CdS (CdS:Mn) nanoparticles capped by an inorganic shell of Mn(OH)2. CdSO4, Na2S2O3 and Mn(NO3)2 were used as the precursors, and thioglycerol (C3H8O2S) was employed as the capping agent and also the catalyst of the reaction. Using these materials resulted in very slow rate of the reaction and particles growth. The self-assembled one-pot process was performed at pH of 8 and Mn:Cd ratio of 10, and took about 10 days for completion. CdS:Mn nanoparticles are slowly formed in the first day of the process; however, the luminescence is weak. After 7 days, the solution turns white turbid through the formation of additional particles, which precipitate on the walls on the next day. At this stage, a relatively strong red luminescence at 635 nm appears from transparent solution of the CdS:Mn nanoparticles. The white deposit on the walls turns to dark-brown color and luminescence increases on the 9th day. Finally, the CdS:Mn nanoparticles agglomerate and precipitate out of the solution on 10th day. X-ray diffraction and optical spectroscopy showed crystalline phase CdS nanoparticles with an average size of 3.6 nm. We explain the luminescence enhancement based on the formation of a Mn(OH)2 shell on the surface of the CdS:Mn nanoparticles during the precipitation stage. This can passivate the S dangling bonds located on the particles surface. As the surface Cd sites are previously capped with thioglycerol molecules, a complete surface passivation is achieved and results in emergence of high-intensity luminescence. 相似文献
3.
Preparation and characterization of CdS/Si coaxial nanowires 总被引:1,自引:0,他引:1
CdS/Si coaxial nanowires were fabricated via a simple one-step thermal evaporation of CdS powder in mass scale. Their crystallinities, general morphologies and detailed microstructures were characterized by using X-ray diffraction, scanning electron microscope, transmission electron microscope and Raman spectra. The CdS core crystallizes in a hexagonal wurtzite structure with lattice constants of a=0.4140 nm and c=0.6719 nm, and the Si shell is amorphous. Five Raman peaks from the CdS core were observed. They are 1LO at 305 cm−1, 2LO at 601 cm−1, A1-TO at 212 cm−1, E1-TO at 234 cm−1, and E2 at 252 cm−1. Photoluminescence measurements show that the nanowires have two emission bands around 510 and 590 nm, which originate from the intrinsic transitions of CdS cores and the amorphous Si shells, respectively. 相似文献
4.
P. Rodríguez E. San-Martin Martínez G. Gonzalez O. Zelaya 《Applied Surface Science》2008,255(3):740-742
CdS nanoparticles have been synthesized using starch as capping agent in aqueous solution. The morphology and crystalline structure of such samples were measured by high-resolution transmission electron microscopy and X-ray diffraction, respectively. The average grain size of the nanoparticles determined by these techniques was of the order of 5 nm. Photoluminescence of CdS nanoparticles shows a strong emission peak below to the band gap bulk semiconductor attributed to center trap states, also the broadening peak was interpreted in terms of electron-phonon interaction. 相似文献
5.
We have investigated temporal behavior of the photoluminescence (PL) spectra of thin films containing CdSe/ZnS quantum dots irradiated by 532 nm laser radiation and gamma-rays. Under ∼100 W/cm2 laser radiation, the PL intensity (IPL) increases with irradiation time upto about 500 s and thereafter declines linearly. The wavelength of the PL emission (λpeak) exhibits a blue-shift with exposure time. Upon simultaneous irradiation by 100 W/cm2 532-nm laser, as well as 0.57 and 1.06 MeV gamma-rays, the temporal behaviors of both IPL and λpeak are significantly different; IPL increases to a saturation level, and the magnitude of the blue-shift in λpeak is reduced. We discuss possible mechanisms underlying these results. 相似文献
6.
The luminescence properties of zinc oxide (ZnO) nanocrystals grown from solution are reported. The ZnO nanocrystals were characterized by scanning electron microscopy, X-ray diffraction, cathodo- and photoluminescence (PL) spectroscopy. The ZnO nanocrystals have the same regular cone form with the average sizes of 100-500 nm. Apart from the near-band-edge emission around 381 nm and a weak yellow-orange band around 560-580 nm at 300 K, the PL spectra of the as-prepared ZnO nanocrystals under high-power laser excitation also showed a strong defect-induced violet emission peak in the range of 400 nm. The violet band intensity exhibits superlinear excitation power dependence while the UV emission intensity is saturated at high excitation laser power. With temperature raising the violet peak redshifts and its intensity increases displaying unconventional negative thermal quenching behavior, whereas intensity of the UV and yellow-orange bands decreases. The origin of the observed emission bands is discussed. 相似文献
7.
Y2O3:Er3+, Yb3+ nanocrystals have been obtained by ball milling and using a combustion synthesis procedure. In both cases the nanocrystals have been successfully coated with SiO2 following the Stöber method. The average size of the as-synthesized nanoparticles has been estimated from X-ray diffraction patterns and transmission electron microscopy images. The dependence of the optical properties of these samples on synthesis procedure or dopant concentration has been investigated. Emission, excitation and lifetime measurements have been carried out. Upconversion luminescence has been detected in all samples and an enhancement of the red to green emission ratio has been observed in all samples after infrared compared to visible excitation. The mechanisms responsible for the upconversion phenomena have been discussed. 相似文献
8.
Hongxia Wang Wei Zhang Faling Zhang Yuan Cao Wenhui Su 《Journal of magnetism and magnetic materials》2008
NiFe2O4/SiO2 nanocomposites were prepared using a sol–gel method with the addition of 3-aminopropyltrimethoxysilane (APS). Different phases and morphologies of NiFe2O4/SiO2 nanocomposites were obtained when different amounts of APS were used. The structural properties of the products were examined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Sheet-like morphology was observed at higher molar ratio of APS to NiFe2O4, while spherical NiFe2O4/SiO2 nanoparticles separated from each other were formed at lower molar ratio of APS to NiFe2O4. The magnetic properties of the nanocomposites were also investigated, indicating that the interparticle interactions exhibit strong dependence on the molar ratio of APS to NiFe2O4. 相似文献
9.
Edward Sun 《Applied Surface Science》2010,256(16):5021-5223
Temperature-dependent photoluminescence (PL) from Si nanodots with Al2O3 surface passivation layers was studied. The Si nanodots were grown by low pressure chemical vapor deposition and the Al2O3 thin films were prepared by atomic layer deposition (ALD), respectively. The BOE (Buffer-Oxide-Etch) treatment resulted in the damaged surface of Si nanodots and thus caused dramatic reduction in the PL intensity. Significant enhancement of the PL intensity from Si nanodots after the deposition of Al2O3 thin films was observed over a wide temperature range, indicating the remarkable surface passivation effect to suppress the non-radiative recombination at the surface of Si nanodots. The results demonstrated that the Al2O3 surface passivation layers grown by ALD are effectually applicable to nanostructured silicon devices. 相似文献
10.
P. Lavallard M. ChamarroJ. Pérez-Conde A.K. BhattacharjeeS.V. Goupalov A.A. Lipovskii 《Solid State Communications》2003,127(6):439-442
Photoluminescence of CdTe nanocrystals (NC) is excited resonantly in the lowest energy absorption peak. The spectrum shows a luminescence line shifted to a lower energy and acoustical and optical phonon replica. The Stokes shift between the luminescence and excitation lines is attributed to the electron-hole exchange energy in the nanocrystal. By tuning the laser line inside the absorption peak, we are able to measure the Stokes shift as a function of the excitation energy. Calculation of the absorption gap and the Stokes shift is done in a tight-binding theory. It allows us to determine the radius R of NC excited at a given wavelength and to compare the experimental and theoretical values of the exchange energy as a function of R. A very good agreement is obtained. The observed size dependence of the acoustical phonon mode energy provides a further confirmation of our analysis. 相似文献
11.
O. Maksimov W.H. WangN. Samarth Martin MuñozM.C. Tamargo 《Solid State Communications》2003,128(12):461-466
We report photoluminescence (PL) and reflectivity measurements of Zn0.5Cd0.5Se epilayers grown by molecular beam epitaxy on InP substrates. The low-temperature PL spectra are dominated by asymmetric lines, which can be deconvoluted into two Gaussian peaks with a separation of ∼8 meV. The behavior of these peaks is studied as a function of excitation intensity and temperature, revealing that these are free exciton (FE) and bound exciton emission lines. Two lower energy emission lines are also observed and assigned to the first and second longitudinal optical phonon replicas of the FE emission. The temperature dependence of the intensity, line width, and energy of the dominant emission lines are described by an Arrhenius plot, a Bose-Einstein type relationship, Varshni's and Bose-Einstein equations, respectively. 相似文献
12.
Sword-like (diameter ranging from 40 nm to 300 nm) and needle-like zinc oxide (ZnO) nanostructures (average tip diameter ∼40 nm)
were synthesized on annealed silver template over silicon substrate and directly on silicon wafer, respectively via thermal
evaporation of metallic zinc followed by a thermal annealing in air. The surface morphology, microstructure, chemical analysis
and optical properties of the grown samples were investigated by field emission scanning electron microscopy, X-ray diffraction,
energy dispersive X-ray analysis, room temperature photoluminescence and Raman spectroscopy. The sword-like ZnO nanostructures
grown on annealed silver template are of high optical quality compared to needle-like ZnO nanorods for UV emission and show
enhanced Raman scattering. 相似文献
13.
Effect of Mn doping on the microstructures and photoluminescence properties of CBD derived ZnO nanorods 总被引:1,自引:0,他引:1
Jihui Lang Qiang Han Changsheng Li Xue Li Dandan Wang Ming Gao Xiaoyan Liu 《Applied Surface Science》2010,256(11):3365-9577
Mn-doped ZnO nanorods were synthesized from aqueous solutions of zinc nitrate hexahydrate, manganese nitrate and methenamine by the chemical solution deposition method (CBD). Their microstructures, morphologies and optical properties were studied in detail. X-ray diffraction (XRD) results illustrated that all the diffraction peaks can be indexed to ZnO with the hexagonal wurtzite structure. Scanning electron microscope (SEM) results showed that the average diameter of Mn-doped ZnO nanorods was larger than that of the undoped one. Photoluminescence (PL) spectra indicated that manganese doping suppressed the emission intensity and caused the blue shift of UV emission position compared with the undoped ZnO nanorods. In the Raman spectrum of Mn-doped ZnO nanorods, an additional mode at about 525 cm−1 appeared which was significantly enhanced and broadened with the increase of Mn doping concentration. 相似文献
14.
In this study, we present theoretical and experimental analyses on the waveguide mode properties of prism-coupled Au:SiO2 nanocomposite films with the near infrared laser of 1550 nm wavelength where the optical absorption diminished enough for the generation of guided mode. The evolution of guided mode in the nanocomposite waveguide and its propagation properties were also evaluated. As an effective way of utilizing the surface plasmon resonance properties for the application to optical switching devices, we employed an attenuated total internal reflection type optical switch geometry and tested its effectiveness for the absorptive opto-functional materials system using a cross-modulation technique with 532-nm pump and 1550-nm probe beams. The index change probe beam experiences was found to be purely refractive in nature and negative in sign, presumably due to the photo-thermal effect induced in the nanocomposite film by the irradiation of pump beam. 相似文献
15.
Y. Gu Igor L. Kuskovsky R.D. Robinson G.F. Neumark S.P. Guo M.C. Tamargo 《Solid State Communications》2005,134(10):677-681
The composition and size of optically active CdxZn1−xSe/ZnSe quantum dots are estimated with a previously developed method. The results are then compared with those obtained for CdxZn1−xSe/Zn0.97Be0.03Se QDs. We show that introducing Be into the barrier material enhances both Cd composition and quantum size effect of optically active quantum dots. 相似文献
16.
Single quantum wells of submonolayer ZnS/ZnTe were grown between ZnTe layers using hot wall epitaxy method with fast-movable substrate configuration. As ZnS well widths decrease from 1 to 0.15 monolayer, the photoluminescence peaks shift to higher energies from 2.049 to 2.306 eV, and the photoluminescence intensities increase. As ZnS well width decrease, the PL spectra show the lower-energy tails and consequently the increased PL FWHMs. This is a result of a convolution of two PL peaks from two-dimensional and zero-dimensional quantum islands, supported by a still lived lower-energy peaks of zero-dimensional quantum islands above 50 K. The energy shift in the power dependence of photoluminescence spectra is proportional to the third root of the excitation density. These behaviors can be described by the formation of submonolayer type-II ZnS/ZnTe quantum well structure, and the coexistence of two-dimensional and one-dimensional islands in ZnS layers. 相似文献
17.
A route towards optimisation of uniformity and density of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy (MOVPE) through successive variations of the growth parameters is reported. It is demonstrated that a key parameter in obtaining a high density of quantum dots is the V/III ratio, a fact which was shown to be valid when either AsH3 (arsine) or tertiary-butyl-arsine (TBA) were used as group V precursors. Once the optimum V/III ratio was found, the size distribution was further improved by adjusting the nominal thickness of deposited InAs material, resulting in an optimum thickness of 1.8 monolayers of InAs in our case. The number of coalesced dots was minimised by adjusting the growth interruption time to approximately 30 s. Further, the uniformity was improved by increasing the growth temperature from 485 °C to 520 °C. By combining these optimised parameters, i.e. a growth temperature of 520 °C, 1.8 monolayers InAs thickness, 30 s growth stop time and TBA as group V precursor, a full-width-half-maximum (FWHM) of the low temperature luminescence band of 40 meV was achieved, indicating a narrow dot size distribution. 相似文献
18.
Colloidal cupric oxide (CuO) nanoparticles were formed by using a colloid-thermal synthesis process. X-ray diffraction patterns, transmission electron microscopy (TEM) images, high-resolution TEM images, and X-ray energy dispersive spectrometry profiles showed that the colloidal CuO nanoparticles were formed. The optical band-gap energy of CuO nanoparticles at 300 K, as determined from the absorbance spectrum, was 3.63 eV. A photoluminescence spectrum at 300 K showed that a dominant emission peak appeared at the blue region. X-ray photoelectron spectroscopy profiles showed that the O 1s and the Cu 2p peaks corresponding to the CuO nanoparticles were observed. 相似文献
19.
Photoluminescence and Raman scattering of Cu-doped ZnO films prepared by magnetron sputtering 总被引:2,自引:0,他引:2
X.B. Wang 《Applied Surface Science》2007,253(16):6905-6909
The Cu-doped ZnO films were prepared by direct current reactive magnetron sputtering using a zinc target with various Cu-chips attached. The influences of Cu-doping on the microstructure, photoluminescence, and Raman scattering of ZnO films were systematically investigated. The results indicate that ZnO films doped with moderate Cu dopant (2.0-4.4 at.%) can obtain wurtzite structure with strong c-axis orientation. The near band edge (NBE) emission of ZnO film can be enhanced by Cu dopant with a concentration of 2.0 at.% and quench quickly with further increase of doping concentration. Two additional modes at about 230 and 575 cm−1, which could be induced by Cu dopant, can be observed in Raman spectra of the Cu-doped ZnO films. 相似文献
20.
In-N codoped ZnMgO films have been prepared on glass substrates by direct current reactive magnetron sputtering. The p-type conduction could be obtained in ZnMgO films by adjusting the N2O partial pressures. The lowest resistivity was found to be 4.6 Ω cm for the p-type ZnMgO film deposited under an optimized N2O partial pressure of 2.3 mTorr, with a Hall mobility of 1.4 cm2/V s and a hole concentration of 9.6 × 1017 cm−3 at room temperature. The films were of good crystal quality with a high c-axis orientation of wurtzite ZnO structure. The presence of In-N bonds was identified by X-ray photoelectron spectroscopy, which may enhance the nitrogen incorporation and respond for the realization of good p-type behavior in In-N codoped ZnMgO films. Furthermore, the ZnMgO-based p-n homojunction was fabricated by deposition of an In-doped n-type ZnMgO layer on an In-N codoped p-type ZnMgO layer. The p-n homostructural diode exhibits electrical rectification behavior of a typical p-n junction. 相似文献