Epitaxy of m ‐plane ZnO on (112) LaAlO3 substrate

Heteroepitaxial growth of non‐polar m ‐plane (10 0) ZnO has been demonstrated on (112) LaAlO₃ single crystal substrates using the pulsed laser deposition method. X‐ray diffraction, reflection high energy electron diffraction, and cross‐sectional transmission electron microscopy with selected‐area diffraction, have been used to characterize the structural properties of deposited ZnO films. The epitaxial relationship between ZnO and LAO is shown to be (10 0)_ZnO ∥ (112)_LAO, (11 0)_ZnO ∥ ( 1)_LAO and [0001]_ZnO ∥ [ 10]_LAO. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

p‐type conduction in stacking‐fault‐free m ‐plane GaN

Transport measurements of p‐type m ‐plane GaN films grown on low extended‐defect density, free‐standing m ‐plane (10 0) GaN substrates are presented. No significant anisotropy in in‐plane mobility was found for hole concentrations between 2.45 × 10¹⁷ and 8.7 × 10¹⁸ cm^–3. Since faulted, heteroepitaxial m ‐plane films showed significant anisotropy in electron and hole mobility a microstructural feature with anisotropic distribution (basal plane stacking faults) is discussed as a possible source of anisotropic scattering in non‐polar and semi‐polar films. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

MOVPE growth and characterization of a ‐plane AlGaN over the entire composition range

We report the metal organic vapor phase epitaxy (MOVPE) growth and characterization of non‐polar (11 0) a ‐plane Al_x Ga_1–xN on (1 02) r ‐plane sapphire substrates over the entire composition range. Al_x Ga_1–xN samples with ～0.8 μm thick layers and with x = 0, 0.18, 0.38, 0.46, 0.66, and 1.0 have been grown on r ‐plane sapphire substrates. The layer quality can be improved by using a 3‐stage AlN nucleation layer and appropriate V/III ratio switching following nucleation. All a ‐plane AlGaN epilayers show an anisotropic in‐plane mosaicity, strongly influenced by Al incorporation and growth conditions. Careful lattice parameter measurements show anisotropic in‐plane strain that results in an orthorhombic distortion of the hexagonal unit cell, making Al composition determination from X‐ray diffraction difficult. In general lower Al incorporation is seen in a ‐plane epilayers compared to c ‐plane samples grown under the same conditions. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Na‐site energy of P2‐type NaxM O2 (M = Mn and Co)

P2‐type Na_xM O₂ (M = Mn and Co) is a promising cathode material for low‐cost sodium ion secondary batteries. In this structure, there are two different crystallographic Nai (i = 1 and 2) sites with different Coulomb potential $ (\varphi _i)$ provided by M^4–x and O^2–. Here, we experimentally determine a difference ${(\rm \Delta }\varepsilon \equiv \varepsilon _1 - \varepsilon _2)$ of Na‐site energies ${(}\varepsilon _i \equiv e\varphi {\kern 1pt} _i)$ based on the temperature dependence of the site occupancies. We find that ${\rm \Delta }\varepsilon \;{=}\;56\;{K}$ for Na_0.52MnO₂ is significantly smaller than 190 K for Na_0.59CoO₂. We interpret the suppressed ${\rm \Delta }\varepsilon $ in Na_0.52MnO₂ in terms of the screening effect of the Na⁺ charge. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Low‐temperature growth of high quality AlN films on carbon face 6H‐SiC

AlN films have been grown on atomically flat carbon face 6H‐SiC (000 ) substrates by pulsed laser deposition and their structural properties have been investigated. In‐situ reflection high‐energy electron diffraction observations have revealed that growth of AlN at 710 °C proceeds in a Stranski–Krastanov mode, while typical layer‐by‐layer growth occurs at room temperature (RT) with atomically flat surfaces. It has been revealed that the crystalline quality of the AlN film is dramatically improved by the reduction in growth temperature down to RT and the full width at half maximum values in the X‐ray rocking curves for 0004 and 10 2 diffractions of the RT‐grown AlN film are 0.05° and 0.07°, respectively. X‐ray reciprocal space mapping has revealed that the introduction of misfit dislocations is suppressed in the case of RT growth, which is probably responsible for the improvement in crystalline quality. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

An ab initio study of CX3‐substitution (X = H,F, Cl,Br, I) effects on the static electric polarizability and hyperpolarizability of diacetylene

We report a systematic ab initio and density functional theory (DFT) study of the electric properties of the X₃C? C≡C? C≡C? H (X = H, F, Cl, Br, and I) sequence of substituted diacetylenes. We rely on finite‐field Møller–Plesset perturbation theory and coupled‐cluster calculations with large, flexible basis sets. Our best values at the second‐order Møller–Plesset perturbation theory level for the mean dipole polarizability and second hyperpolarizability are $\overline {{\alpha} } $ /e²aE = 64.46 (? CH₃), 65.59 (? CF₃), 110.11 (? CCl₃), 138.90 (? CBr₃), 184.98 (? CI₃) and $\overline {{\gamma} } $ /e⁴aE = 21020 (? CH₃), 13469 (? CF₃), 32708 (? CCl₃), 57599 (? CBr₃), and 105251 (? CI₃). For comparison, the analogous MP2 values for diacetylene [P.Karamanis and G.Maroulis, Chem. Phys. Lett. 2003 , 376, 403.] are $\overline {{\alpha} } $ /e²aE = 49.17, and $\overline {{\gamma} } $ /e⁴aE = 16227. For the mean first hyperpolarizability we report $\overline {{\beta} } $ /e³aE = ?205.8 (? CH₃), ?55.7 (? CF₃), 120.8 (? CCl₃), 443.8 (? CBr₃), and 725.4 (? CI₃). Copyright © 2010 John Wiley & Sons, Ltd.     

DFT study and NBO analysis of the mutual interconversion of cumulene compounds

The B3LYP/6‐31G* method was used to investigate the configurational properties of allene (1,2‐propadiene) ( 1 ), 1,2,3‐butatriene ( 2 ), 1,2,3,4‐pentateriene ( 3 ), 1,2,3,4,5‐hexapentaene ( 4 ), 1,2,3,4,5,6‐heptahexaene ( 5 ), 1,2,3,4,5,6,7‐octaheptaene ( 6 ), 1,2,3,4,5,6,7,8‐nonaoctaene ( 7 ), and 1,2,3,4,5,6,7,8,9‐decanonaene ( 9 ). The calculations at the B3LYP/6‐31G* level of theory showed that the mutual interconversion energy barrier in compounds 1 – 8 are: 209.73, 131.77, 120.34, 85.00, 80.91, 62.19, 55.56, and 46.83 kJ mol^?1, respectively. The results showed that the difference between the average C?C double bond lengths ( ) values in cumulene compounds 1 and 2 , is larger than those between 7 and 8 , which suggest that with large n (number of carbon atoms in cumulene chain), the values approach a limiting value. Accordingly, based on the plotted data, the extrapolation to n = ∞, gives nearly the same limiting (i. e., ). Also, NBO results revealed that the sum of π‐bond occupancies, , decrease from 1 to 8 , and inversely, the sum of π‐antibonding orbital occupancies, , increase from compound 1 to compound 8 . The decrease of values for compounds 1 – 8 , is found to follow the same trend as the barrier heights of mutual interconversion in compounds 1 – 8 , while the decrease of the barrier height of mutual interconversion in compounds 1 – 8 is found to follow the opposite trend as the increase in the number of carbon atom. Accordingly, besides the previously reported allylic resonant stabilization effect in the transition state structures, the results reveal that the values, , Δ(E_HOMO ? E_LUMO), and the C atom number could be considered as significant criteria for the mutual interconversion in cumulene compounds 1 – 8 . This work reports also useful predictive linear relationships between mutual interconversion energy barriers ( ) in cumulene compounds and the following four parameters: , , Δ(E_HOMO ? E_LUMO), and C_Number. Copyright © 2007 John Wiley & Sons, Ltd.     

Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs

Improved nonpolar m ‐plane light emitting diodes (LEDs) with a thick InGaN multi‐quantum‐well (MQW) structure have been fabricated on low extended defect bulk m ‐plane GaN substrates using metal organic chemical vapor deposition (MOCVD). The peak wavelength of the electroluminescence emission from the packaged LEDs was 402 nm, which is in the blue‐violet region. The output power and EQE were 28 mW and 45.4%, respectively, at a pulsed driving current of 20 mA. With increasing current, the output power increased linearly, and fairly flat EQE was observed with increasing drive current. At 200 mA, the power and EQE were 250 mW and 41%, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Persistent layer‐by‐layer growth for pulsed‐laser homoepitaxy of $(000\bar 1)$ ZnO

Persistent layer‐by‐layer growth is demonstrated for pulsed‐laser homoepitaxy of ZnO thin films on $(000\bar 1)$ ZnO single crystals. Employing interval pulsed‐laser deposition (PLD), RHEED oscillations are stabilized over a film thickness of about 90 nm. For interval pulsed laser deposited films a considerably decreased root‐mean‐square surface roughness of 0.26 nm was found, in comparison to 0.74 nm for conventional PLD. A small asymmetry in the X‐ray diffraction (XRD) 2θ –ω scan reveals compressive strain in the thin film being slightly larger for interval PLD as compared to conventional PLD. The FWHM of the photoluminescence (PL) I₆ line is higher with about 500 µeV as compared to 350 µeV for the conventional PLD. Consequently, both XRD as well as PL indicate a slightly higher amount of charged defects for the interval PLD.

     

Kinetics and mechanisms of gas‐phase elimination of 2,2‐diethoxyethyl amine and 2,2‐diethoxy‐N,N‐diethylethanamine

The gas‐phase elimination kinetics of 2,2‐diethoxyethyl amine and 2,2‐diethoxy‐N,N‐diethylethanamine (320–380 °C; 40–150 Torr) in a seasoned reaction vessel are homogeneous, unimolecular and obey a first‐order rate law. These elimination processes involve two parallel reactions. The first gives ethanol and the corresponding 2‐ethoxyethenamine. The latter compound further decomposes to ethylene, CO and the corresponding amine. The second parallel reaction produce ethane and the corresponding ethyl ester of an α‐amino acid. The following Arrhenius expressions are given as: For 2,2‐diethoxyethyl amine For 2,2‐diethoxy‐N,N‐diethylethanamine Comparative kinetic and thermodynamic parameters of the overall, the parallel and the consecutive reactions lead to consider two types of mechanisms in terms of a concerted polar cyclic transition state structures. Copyright © 2008 John Wiley & Sons, Ltd.     

Crystal structures of 3‐methyl‐2(1H)‐quinoxalinone and three substituted derivatives

3‐Methyl‐2(1H)‐quinoxalinone and three derivatives (3,7‐dimethyl‐2(1H)‐quinoxalinone, 3‐methyl‐6,7‐dichloro‐2(1H)‐quinoxalinone and 3‐methyl‐7‐nitro‐2(1H)‐quinoxalinone) have been synthesised and analysed by ¹H NMR and IR spectral spectroscopies. The crystal structures have been determined at room temperature from X‐ray single crystal diffraction data for three of them and from powder diffraction data for the nitro derivative. 3‐Methyl‐2(1H)‐quinoxalinone crystallises in the P2₁/c monoclinic system, 3,7‐dimethyl‐2(1H)‐quinoxalinone in the Pbca orthorhombic system and the two others compounds in the P$\overline {1} $ triclinic system. For the nitro derivative, C? H$\cdots $ N short contacts are established between the carbon of the methyl and the double bounded nitrogen of the ring. For the three other compounds N? H$\cdots $ O hydrogen bonds involve the atoms of the heterocyclic ring. Copyright © 2011 John Wiley & Sons, Ltd.     

Single domain nonpolar (13$ \bar 4 $0) ZnO on (114) LaAlO3

An unconventional nonpolar plane (13$ \bar 4 $ 0) ZnO epitaxial film was grown on a 2‐inch (114) LaAlO₃ (LAO) substrate by pulsed laser deposition. Reflection high energy electron diffraction (RHEED) patterns of the grown ZnO surface demonstrate single crystalline characteristics with the orientation inclined with the a‐axis. Atomic force microscopy (AFM) shows that the grown ZnO film exhibits a stripe‐like surface morphology with the longitudinal direction parallel to the c‐axis. Cross‐sectional transmission electron microscopy (TEM) with selected area electron diffraction (SAED) was used to characterize the microstructure and to determine the growth plane of ZnO grown film as (13$ \bar 4 $ 0). In addition, XRD pole‐figure measurements confirm the single domain growth of (13$ \bar 4 $ 0) ZnO on (114) LAO. Room temperature photoluminescence spectra of the ZnO film measured across the substrate show the same near band edge emission peak at 3.29 eV, indicating that the nonpolar (13$ \bar 4 $ 0) ZnO film has excellent uniform optical properties. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Hierarchy of the non‐covalent interactions in the alanine‐based secondary structures. DFT study of the frequency shifts and electron‐density features

The alanine (Ala)‐based cluster models of C5, C7, and C10 H‐bonds are studied at the DFT/B3LYP level. CPMD/BLYP simulations of the infinite polyalanine α‐helix (C13 H‐bond) and the two‐stranded β‐sheets are performed. Combined use of frequency shifts and electron‐density features enable us to detect and describe quantitatively the non‐covalent interactions (H‐bonds) defining the intrinsic properties of Ala‐based secondary structures. The energies of the primary N? H O H‐bonds are decreasing in the following way: C13 > C5 ≥ C7 > C10. The energies of the secondary N? H O, N?H N, and H H interactions are comparable to those of the primary H‐bonds (～4.5 kcal/mol). Side chain–backbone C? H O interaction is found to be the weakest non‐covalent interaction in the considered species. Its energy is ～0.5 kcal/mol in the infinite polyalanine α‐helix. Quantum‐topological electron‐density analysis is found to be a powerful tool for the detection of secondary non‐covalent interactions (C?O H? C and H H) and bifurcated H‐bonds, while the frequency shift study is useful for the identification and characterization of primary or secondary H‐bonds of the N? H O type. Copyright © 2008 John Wiley & Sons, Ltd.     

Silver: a novel growth catalyst for Ge nanoislands on Si(113)

The impact of silver pre‐adsorption on germanium growth on Si(113) was investigated using in‐situ low‐energy electron microscopy (LEEM) as well as low‐energy electron diffraction (LEED). The adsorption of silver leads to the formation of a regular pattern of nanofacets along the [1 0] direction. The periodicity of this pattern in [33 ] direction was determined to (44 ± 4) nm. From LEED series at different energies the facets were identified to be of (111) and (115) orientation. While the (111) facets show a (√3 × √3)‐R30° reconstruction, the (115) facets exhibit a (2 × n) superstructure. The subsequent growth of Ge results in the formation of nanoislands that are aligned along the facets. These Ge islands have an anisotropic shape with typical sizes of about 100 nm in [33 ] direction and 400 nm in [1 0] direction. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Substituent effect on the UV spectra of p‐disubstituted compounds XPh(CHCHPh)nY (n = 0, 1, 2)

Three parameters, , and , are developed to express the substituent effect and the effect of the parent molecular structure of p‐disubstituted compounds XPh(CH?CHPh)_nY (n = 0, 1, 2). The investigated result shows a good correlation between the UV absorption wavenumbers (υ_max) and the three parameters for a diverse set of title compounds, and the correlation equation can be used to predict the UV absorption energy of compounds with the mentioned structure. This approach provides a new insight for the quantitative structure‐property relationship (QSPR) correlation of the UV absorption energy of p‐disubstituted homologues. Copyright © 2010 John Wiley & Sons, Ltd.     

DFT study of the biphenylene–NO complexes formed in nitration mechanism

The most probable complexes formed in biphenylene (BP) nitration pathway have been investigated at B3LYP/6‐31+G(d,p) level of theory in the gas phase. To obtain more accurate energies, single point calculations were carried out at B3LYP/6‐31++G(2d,2p), B3PW91/6‐31+G(d,p), and B3PW91/6‐31++G(2d,2p) levels using B3LYP/6‐31+G(d,p) optimized geometry. The six intermediates and one transition state were found before the subsequent formation of the arenium ion on the potential energy surface of the electrophilic nitration of BP. It was also shown that the position β in the BP is much more susceptible to electrophilic attack than the competing position α. The Natural Bond Orbital (NBO), Charges from Electrostatic Potentials using a Grid based method (CHelpG), and Merz–Singh–Kollman (MK) charges and s‐characters of atoms involved in the reaction mechanism were calculated. Inspection of charges in the moieties indicates that the positive charge in all complexes is chiefly located on the BP, which means that theNO₂ moiety received the electron from the BP. To investigate the nature of BP– interaction in the five π‐complexes, atoms in molecules (AIM) analysis was performed. The AIM results suggested that the BP– interactions have an electrostatic characteristic. In addition, high electrostatic interactions were predicted in π‐complexes in which one of the oxygen atoms of interacts with the BP. Nucleus‐independent chemical shift (NICS) methodology has been applied to study the change of antiaromaticity in four‐membered ring of BP upon complexation with . The results based on NICS calculations show that antiaromaticity of four‐membered ring decreases upon complexation. Copyright © 2008 John Wiley & Sons, Ltd.     

Double resonance Raman effects in InN nanowires

We study the excitation wavelength dependence of the Raman spectra of InN nanowires. The $ E_1 ({\rm LO})$ phonon mode, which is detected in backscattering configuration because of light entering through lateral faces, exhibits an upward fre‐ quency shift that can be explained by Martin's double resonance. The $ E_1 ({\rm LO})$ /$ E_2^h $ intensity ratio increases with the excitation wavelength more rapidly than the $A_1 ({\rm LO})/E_2^h $ ratio measured in InN thin films. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of InN films on spinel substrates by pulsed laser deposition

We have grown InN films on MgAl₂O₄(111) substrates with atomically flat surfaces using pulsed laser deposition (PLD) and compared their structural properties with those grown on (Mn,Zn)Fe₂O₄(111) substrates. It has been revealed that InN(0001) films grow on MgAl₂O₄(111) with an in‐plane epitaxial relationship of InN[1 00] // MgAl₂O₄[1 0], achieving a lattice mismatch minimum. The InN films exhibited a clear sixfold rotational symmetry, without 30° rotational domains and with a full width at half maximum value of the InN 0002 rocking curve being 17.5 arcmin. Comparison between InN films grown on MgAl₂O₄ and those on (Mn,Zn)Fe₂O₄ led us to conclude that suppression of the interfacial reactions between the InN films and the substrate is inherently important to obtain high quality InN on substrates with a spinel structure. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The reaction of •OH with O2, the decay of O and the pKa of HO – interrelated questions in aqueous free‐radical chemistry

In the reactions of ozone with organic compounds in aqueous solution, O is an abundant intermediate. A basic aspect of its conversion into ^?OH is addressed here. The reactions O^?? + O₂ ? O (1), H⁺ + O^?? ? ^?OH (8), ^?OH + O₂ ? HO (6), and H⁺ + O ? HO (5) are interconnected by a thermodynamic cycle. For equilibria (1) and (8) reliable equilibrium constants, and hence Gibbs energies are available (ΔG⁰(1) = ?32 kJ mol^?1, ΔG⁰(8) = 67 kJ mol^?1). For reaction (6), a Gibbs energy of ΔG⁰(6) = 47 kJ mol^?1 (K₆ = 10^?8.2 M) has now been calculated by G1. From the thermodynamic cycle one hence arrives at ΔG⁰(5) = ?12 kJ mol^?1. This relates to pK_a(HO) = ?2.1. Thus, the HO radical is a very strong acid. This value agrees with a value of ?2.0 obtained from the Bielski and Schwarz relationship for pK_a values of O_xH_y compounds. Reaction (6) must be very slow, 0.1 < k₆ < 10⁴ M^?1 s^?1. Copyright © 2010 John Wiley & Sons, Ltd.     

Atomic structure of the non‐polar GaN($ \bar 2 $110) surface by cross‐sectional scanning tunneling microscopy

The ( 110) plane of gallium nitride, exposed by cleaving a GaN single crystal under ultra‐high vacuum conditions, has been atomically resolved for the first time, using cross‐sectional scanning tunneling microscopy. The spatial period length supports a (1 × 1) unit mesh size, i.e., the absence of a reconstruction. The contrast observed in the experimental data is well explained by the atomic arrangement expected for a truncated‐bulk structure. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)