Observation of novel coexistence of Kondo effect and room temperature magnetism in AlN/Al/AlN trilayer thin film

In this work for the first time, we are reporting the unusual observation of the Kondo effect with the coexistence of room temperature ferromagnetism in AlN/Al/AlN trilayer thin film. The grown film shows resistivity minimum at a temperature of ∼48K, which shifts to the lower temperature on the application of magnetic fields. After considering various possibilities for an upturn in resistivity, we found that the Kondo scattering is responsible for upturn at low temperature. The simultaneous presence of ferromagnetism and Kondo scattering is explained by spatial variation of nitrogen vacancy defects from the film surface to the Al sandwich layer. Furthermore, magneto-transport properties of the film measured at different temperature exhibits both negative and positive components described by localized magnetic moment model for the spin scattering of carriers and two-band model, respectively. This work provides insight into the novel co-existence of ferromagnetism and Kondo effect in crystalline AlN.     

Interplay of low-energy phonons and magnetic excitations in the Kondo insulator YbB12

Peculiarities in the lattice dynamics of the Kondo insulator Y bB(12) have been studied by inelastic neutron scattering. Selected phonon modes were traced above and below the temperature region (T ~ 50 K) where the gap opens in the electron density of states. The intensities of some low-energy modes exhibit an anomalous temperature dependence for q vectors close to the Brillouin zone boundary, suggesting a renormalization of the phonon eigenvectors. This effect is thought to arise from a coupling with magnetic excitations of the same symmetry, which exist at nearby energies. It is argued that this magnetovibrational coupling may in turn play a role in the steep temperature crossover existing in Y bB(12) between the low-temperature (Kondo insulator) and high-temperature (incoherent spin-fluctuation) regimes, which is rapidly suppressed by lighter Zr substitution.     

Measurement of quantum noise in a carbon nanotube quantum dot in the Kondo regime

The current emission noise of a carbon nanotube quantum dot in the Kondo regime is measured at frequencies ν of the order or higher than the frequency associated with the Kondo effect k(B)T (K)/h, with TK the Kondo temperature. The carbon nanotube is coupled via an on-chip resonant circuit to a quantum noise detector, a superconductor-insulator-superconductor junction. We find for hν ≈ k(B)T(K) a Kondo effect related singularity at a voltage bias eV ≈ hν, and a strong reduction of this singularity for hν ≈ 3k(B)T(K), in good agreement with theory. Our experiment constitutes a new original tool for the investigation of the nonequilibrium dynamics of many-body phenomena in nanoscale devices.     

Two-stage Kondo effect in a quantum dot at a high magnetic field

We report a strong Kondo effect (Kondo temperature approximately 4 K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the transition, the low-temperature conductance approaches the unitary limit. Away from the transition, for low bias voltages and temperatures, the conductance is sharply reduced. The observed behavior is compared to predictions for a two-stage Kondo effect in quantum dots coupled to single-channel leads.     

Kondo universal scaling for a quantum dot coupled to superconducting leads

We study competition between the Kondo effect and superconductivity in a single self-assembled InAs quantum dot contacted with Al lateral electrodes. Because of Kondo enhancement of Andreev reflections, the zero-bias anomaly develops side peaks, separated by the superconducting gap energy Delta. For ten valleys of different Kondo temperature T(K) we tune the gap Delta with an external magnetic field. We find that the zero-bias conductance in each case collapses onto a single curve with Delta/k(B)T(K) as the only relevant energy scale, providing experimental evidence for universal scaling in this system.     

Quantum dots with even number of electrons: kondo effect in a finite magnetic field

We show that the Kondo effect can be induced by an external magnetic field in quantum dots with an even number of electrons. If the Zeeman energy B is close to the single-particle level spacing Delta in the dot, the scattering of the conduction electrons from the dot is dominated by an anisotropic exchange interaction. A Kondo resonance then occurs despite the fact that B exceeds by far the Kondo temperature T(K). As a result, at low temperatures T相似文献   

Kondo model for the "0.7 anomaly" in transport through a quantum point contact

Experiments on quantum point contacts have highlighted an anomalous conductance plateau around 0.7(2e(2)/h), with features suggestive of the Kondo effect. Here, an Anderson model for transport through a point contact analyzed in the Kondo limit. Hybridization to the band increases abruptly with energy but decreases with valence, so that the background conductance and the Kondo temperature T(K) are dominated by different valence transitions. This accounts for the high residual conductance above T(K). The model explains the observed gate-voltage, temperature, magnetic field, and bias-voltage dependences. A spin-polarized current is predicted even for low magnetic fields.     

Temperature dependence of a single Kondo impurity

Recent advances in scanning tunneling microscopy have allowed the observation of the Kondo effect for individual magnetic atoms. One hallmark of the Kondo effect is a strong temperature-induced broadening of the Kondo resonance. In order to test this prediction for individual impurities, we have investigated the temperature dependent electronic structure of isolated Ti atoms on Ag(100). We find that the Kondo resonance is strongly broadened in the temperature range T = 6.8 K to T = 49.0 K. These results are in good agreement with theoretical predictions for Kondo impurities in the Fermi liquid regime, and confirm the role of electron-electron scattering as the main thermal broadening mechanism.     

Antiferromagnetism and the Kondo behaviour in Ce(Pt1−xPdx)Ga

We present the results of lattice parameters at room temperature, the static magnetic susceptibility and the magnetic resistivity between 1.8 and 300 K, and the low-temperature specific-heat measurements for the series Ce(Pt_1−xPd_x)Ga, (x=0.0, 0.2, 0.5, 0.8 and 1.0). Two maxima in the temperature dependence of the magnetic resistive curve for each sample are observed, one above 100 K, and another at around 4 K, which due to an interplay between crystal-field effect and the Kondo effect. As determined from the peak values of the temperature dependence of the specific heat data C(T), all samples exhibit antiferromagnetic ordering from 1.3 K for CePdGa to 3.4 K for CePtGa. The large reduction of entropy for each sample below T_N is associated with the Kondo effect.     

Electrolyte gate-controlled Kondo effect in SrTiO3

We report low-temperature, high-field magnetotransport measurements of SrTiO(3) gated by an ionic gel electrolyte. A saturating resistance upturn and negative magnetoresistance that signal the emergence of the Kondo effect appear for higher applied gate voltages. This observation, enabled by the wide tunability of the ionic gel-applied electric field, promotes the interpretation of the electric field-effect-induced 2D electron system in SrTiO(3) as an admixture of magnetic Ti(3+) ions, i.e., localized and unpaired electrons, and delocalized electrons that partially fill the Ti 3d conduction band.     

稀磁合金的杂质互作用效应

本文用格林函数方法讨论Tk(Kondo温度)时杂质互作用对Kondo效应的影响。对s-d互作用哈密顿量作自洽场近似时,同时计入导致Kondo效应和产生杂质互作用的切断项,求得了杂质系统的Kondo温度和低温电阻。结果表明:在稀磁合金中,杂质间的互作用效应使Kondo温度下降,并且使T《T_k时的电阻率温度变化曲线由(1-AT²)型变为(1+BT²)型(A,B>0),从而可能在Tk温区产生电阻极大。 关键词：     

Interplay between crystal field splitting and Kondo effect in CeNi(9)Ge(4-x)Si(x)

The pseudo-ternary solid solution CeNi(9)Ge(4-x)Si(x) (0?≤?x?≤?4) has been investigated by means of x-ray diffraction, magnetic susceptibility, specific heat, electrical resistivity, thermopower and inelastic neutron scattering studies. The isoelectronic substitution of germanium by silicon atoms causes a dramatic change of the relative strength of competing Kondo, RKKY and crystal field (CF) energy scales. The strongest effect is the continuous elevation of the Kondo temperature T(K) from approximately 3.5?K for CeNi(9)Ge(4) to about 70?K for CeNi(9)Si(4). This increase of the Kondo temperature is attended by a change of the CF level scheme of the Ce ions. The interplay of the different energy scales results in an incipient reduction of the ground state degeneracy from an effectively fourfold degenerate non-magnetic Kondo ground state with unusual non-Fermi-liquid features of CeNi(9)Ge(4) to a lower one, followed by an increase towards a sixfold, fully degenerate ground state multiplet in CeNi(9)Si(4) (T(K)?～?Δ(CF)).     

Specific heat of Ce0.8La0.2Al3 in magnetic fields: a test of the anisotropic Kondo picture

The specific heat C of Ce0.8La0.2Al3 has been measured as a function of temperature T in magnetic fields up to 14 T. A large peak in C at 2.3 K has recently been ascribed to an anisotropic Kondo effect in this compound. A 14-T field depresses the temperature of the peak by only 0.2 K, but strongly reduces its height. The corresponding peak in C/T shifts from 2.1 K at zero field to 1.7 K at 14 T. The extrapolated specific heat coefficient gamma = lim as T --> 0 of C/T increases with field over the range studied. We show that these trends are inconsistent with the anisotropic Kondo model.     

Climbing the entropy barrier: driving the single- towards the multichannel Kondo effect by a weak coulomb blockade of the leads

We study a model proposed recently in which a small quantum dot is coupled symmetrically to several large quantum dots characterized by a charging energy E(c). Even if E(c) is much smaller than the Kondo temperature T(K), the long-ranged interactions destabilize the single-channel Kondo effect and induce a flow towards a multichannel Kondo fixed point associated with a rise of the impurity entropy with decreasing temperature. Such an "uphill flow" implies a negative impurity specific heat, in contrast with all systems with local interactions. An exact solution found for a large number of channels allows us to capture this physics and to predict transport properties.     

Thermal conductivity of a moderate heavy-fermion compound YbIn0.2Ag0.8Cu4

The thermal conductivity κ and electrical resistivity ρ of a cast polycrystalline sample of YbIn_0.2Ag_0.8Cu₄, which belongs to the class of moderate heavy-fermion compounds, are measured in the temperature range 5–300 K. It is shown that the phonon thermal conductivity of the sample follows an amorphous-like pattern throughout the temperature range covered, which should be assigned to the presence of Yb ions with a homogeneous mixed valence in this compound. The temperature dependence ρ(T) is divided into three portions: a high-temperature portion characteristic of conventional metals, a medium-temperature portion typical of Kondo compounds, and a low-temperature portion corresponding to a coherent Kondo lattice (the heavy-fermion regime). The Kondo temperature is estimated.     

Intersite coupling effects in a kondo lattice

The La dilution of the Kondo lattice CeCoIn5 is studied. The scaling laws found for the magnetic susceptibility and the specific heat reveal two well-separated energy scales, corresponding to the single-impurity Kondo temperature T(K) and an intersite spin-liquid temperature T(*). The Ce-dilute alloy has the expected Fermi liquid ground state, while the specific heat and resistivity in the dense Kondo regime exhibit non-Fermi-liquid behavior, which scales with T(*). These observations indicate that the screening of the magnetic moments in the lattice involves antiferromagnetic intersite correlations with a larger energy scale in comparison with the Kondo impurity case.     

Universality of the Kondo effect in quantum dots with ferromagnetic leads

We investigate quantum dots in clean single-wall carbon nanotubes with ferromagnetic PdNi-leads in the Kondo regime. Most of the Kondo resonances exhibit a splitting, which depends on the tunnel coupling to the leads and an external magnetic field B, but only weakly on the gate voltage. Using numerical renormalization group calculations, we demonstrate that all salient features of the data can be understood using a simple model for the magnetic properties of the leads. The magnetoconductance at zero bias and low temperature depends in a universal way on gμ(B)(B-B(c))/k(B)T(K), where T(K) is the Kondo temperature and B(c) the external field compensating the splitting.     

Finite temperature physics of 1D topological Kondo insulator: Stable Haldane phase,emergent energy scale and beyond

In recent years, interacting topological insulators have emerged as new frontiers in condensed matter physics, and the hotly studied topological Kondo insulator (TKI) is one of such prototypes. Although its zero-temperature ground-state has been widely investigated, the finite temperature physics on TKI is largely unknown. Here, we explore the finite temperature properties in a simplified model for TKI, namely the one-dimensional p-wave periodic Anderson model, with numerically exact determinant quantum Monte Carlo simulation. It is found that the topological Haldane phase established for groundstate is still stable against small thermal fluctuation and its characteristic edge magnetization develops at low temperature. Such facts emphasize the robustness of (symmetry-protected) topological order against temperature effect, which always exists at real physical world. Moreover, we use the saturated low-T spin structure factor and the \frac{1}{T}-law of susceptibility to detect the free edge spin moment, interestingly the low-temperature upturn behavior of the latter one is similar to experimental finding in SmB₆ at T<50 K. It implies that similar physical mechanism may work both for idealized models and realistic correlated electron materials. We have also identified an emergent energy scale T_cr, which signals a crossover into interesting low-T regime and seems to be the expected Ruderman–Kittel–Kasuya–Yosida coupling. Finally, the collective Kondo screening effect has been examined and it is heavily reduced at boundary, which may give a fruitful playground for novel physics beyond the wellestablished Haldane phase and topological band insulators.     

Mesoscopic Kondo screening effect in a single-electron transistor embedded in a metallic ring.

We study the Kondo screening effect generated by a single-electron transistor or quantum dot embedded in a small metallic ring. When the ring circumference L becomes comparable to the fundamental length scale xi(0)(K) = Planck's constant over upsilon(F)/T(0)(K) associated with the bulk Kondo temperature, the Kondo resonance is strongly affected, depending on the total number of electrons (mod4) and magnetic flux threading the ring. The resulting Kondo-assisted persistent currents are also calculated in both Kondo and mixed-valence regimes, and the maximum values are found in the crossover region.     

AN APPLICATION OF NEW TRANSPORT EQUATION TO LOW-TEMPERATURE RESIS丁IVITY OF DILUTE ALLOYS+

In this paper,we present a method of calculating the low-temperature resistivity by means of the new transprt equation for manyparticle systems. With only very simple calculations, the resistivity can be easily found.Our results show that the resistivity increases with decreasing temperature and does not exhibit logarithmically divergent behwior at T=O.Compared with other calculation,the new method overcomes the defect of the divergence of the Kondo resistivity and has much simpler calcula-tion swithout solving the integral equation of nonflip T matrix. The Kondo temperature T_k is also obtained.