半绝缘磷化铟中与非化学配比有关的深能级缺陷

在不同的化学配比条件下制备了半绝缘磷化铟材料,其中包括配比和富铟熔体中的铁掺杂以及磷气氛和磷化铁气氛下高温退火非掺杂晶片.在这些半绝缘磷化铟材料中检测到了与非化学配比有关的深能级缺陷.通过对大量的原生掺铁和非掺退火半绝缘磷化铟材料中的缺陷的研究,发现原生深能级缺陷与材料的电学参数质量密切相关.迁移率低、热稳定性差的掺铁半绝缘磷化铟材料中有大量的能级位于0.1～0.4eV之间的缺陷.高温退火非掺磷化铟抑制了这些缺陷的产生,获得了迁移率高、均匀性好的高质量半绝缘材料.根据这些结果,我们提出了一种通过控制化学配比制备高质量半绝缘磷化铟材料的方法.     

石墨烯的晶格缺陷

独特而完美的二维晶体结构赋予了石墨烯超高的比表面积、导电导热率和机械强度等诸多优异性能.然而在实际制备过程中,不可避免地会产生空位和含氧基团等晶格缺陷,从而使得这些性能指标大大低于理论值,故具有完美二维晶体结构的高质量石墨烯成了研究者竞相追求的目标.其实,任何事情都具有两面性,这些晶格缺陷同时也具备一些优点,如可以改善石墨烯的离子扩散系数、分离性能及反应活性等.本文客观而全面地综述了当前文献中石墨烯结构中的晶格缺陷对石墨烯性能的影响.     

含反位缺陷碳化硅纳米管的电子结构和光学性质

基于第一性原理计算,对含有SiC反位缺陷或CSi反位缺陷碳化硅纳米管的电子结构和光学性质进行了研究.SiC缺陷在纳米管的表面形成了凸起,CSi缺陷在纳米管的表面形成了凹陷;这两种缺陷都导致在纳米管的导带底附近形成了缺陷能级,使得纳米管表现出n型电导;导带顶到杂质能级间的跃迁使得纳米管的光学带隙呈现了减小的趋势.这些结果对碳化硅纳米管电子器件和光学器件的研究都有较重要的参考价值.     

Bridgman法生长TeO2晶体的缺陷分析

采用Bridgman法生长了二氧化碲(TeO2)晶体,运用光学显微镜、电子衍射光谱、化学腐蚀等方法分析了该方法生长TeO2晶体内部的缺陷.初步讨论了散射点、微裂纹、气泡和黑点、条纹以及腐蚀坑等微缺陷的形成机理.结果表明:晶体内部的散射点来自于原料中杂质,条纹主要是由于晶体内应力引起,晶体内的气泡和黑点和晶体生长的温度密切相关,并就如何减少这些微缺陷进行了初步探讨.     

化学计量比LiNbO3晶体宏观生长缺陷的观察

本文对采用双坩埚提拉法(DCCZ)生长的化学计量比LiNbO3晶体中出现的机械双晶、组分过冷、包裹体等宏观生长缺陷进行了观察和分析.结果表明机械双晶通常以{102}和{104}面族为双晶面,而不是以前文献报道的{102}和{012}面族;化学计量比LiNbO3晶体双坩埚提拉法生长与同成份晶体生长不同,前者是助熔剂生长体系,生长速度稍快或温度较小的波动就会导致组分过冷,而后者属于纯熔体生长体系,不容易产生组分过冷;包裹体是由于组分过冷生长时界面失稳夹入熔体所造成的.由于这些缺陷的存在都会严重影响单晶的获得率和质量,为此,我们通过大量实验研究后提出了可以减少和避免这些生长缺陷提高晶体质量的方法.     

锗酸铅(Pb5Ge3O11)铁电单晶的生长与缺陷研究

采用坩埚下降法成功生长了铁电锗酸铅(Pb5Ce3O11)单晶.所用Pt坩埚尺寸为φ25mm × 200mm和φ10mm×60mi,炉温控制在高于熔点50～80℃,固液界面温度梯度小于25℃/cm,生长速率小于0.5mm/h.所得晶体呈浅棕色,最大尺寸达φ25mm×60mm.采用光学显微镜(OM)及电子探针(EPMA)研究了所得晶体的生长缺陷(气泡、包裹体等),讨论了产生这些缺陷的原因,提出了控制及减少此类缺陷的方法.     

中子辐照MgO晶体的损伤和恢复

用剂量为5.74×1018cm-2的中子对MgO晶体进行了辐照,利用吸收光谱、荧光光谱等手段观测了中子辐照引起的损伤及其恢复.中子辐照产生了大量的阴离子单空位(F+)、阴离子双空位(F2)及其它更高阶的缺陷.通过等时退火,这些缺陷发生了一系列消长和转型的变化过程,并最终在900℃左右全部消失.实验结果表明,吸收峰位于573nm的色心是与位于424nm、451nm的色心类型不同的更高阶的阴离子空位聚集态.     

激光晶体Nd3+:Gd3Ga5O12中的核心和小面生长

Nd3+:Gd3Ga5O12(Nd:GGG)晶体是热容固体激光器的一种重要的工作介质.采用提拉法沿〈111〉方向生长出了Nd:GGG单晶,利用激光器、应力仪和偏光显微镜等仪器和方法,对晶体的小面生长及核心等缺陷进行了观察,分析了小面生长的机理,并提出了消除这些缺陷的办法.通过研究,为改善生长工艺、生长大尺寸优质Nd:GGG晶体提供参考.     

含铅GaSb基半导体的热电输运特性

GaSb是Ⅲ-Ⅴ族系列直接带隙半导体材料,其内部的缺陷性质对调控材料的热电性能具有重要作用.研究发现,在GaSb中掺杂Pb后材料内部产生了大量的反结构受主缺陷Pbsb-及施主缺陷PbCa+,但本征缺陷VGa3-和SbGa2+浓度减少.这些缺陷浓度的变化直接调控了材料的热电输运性能.例如,掺杂0.25; Pb后,室温载流子浓度由未掺杂时的～5.04 ×1023m-3突增到9.50×1025 m-3;在867 K时,电导率由0.56×104 Ω-1·m-1增加到4.82×104 Ω-1·m-1;晶格热导率由4.63 W· K-1·m-1下降到3.41 W· K-1·m-1.最大热电优值(ZT)为0.21,约是未掺杂GaSb最大ZT值的10倍.     

高温相偏硼酸钡(α-BaB2O4)晶体的缺陷行为分析

运用同步辐射X射线白光形貌研究了α-BaB2O4晶体内部的完整性,并分析了α-BaB2O4晶体的缺陷行为及缺陷形成原因.在(001)面发现生长扇界和亚晶界,而在(100)面和(120)面分别观察到了位错、位错簇以及针状包裹体.使用双晶衍射实验发现在(001)面有生长条纹,这些生长条纹呈环形,该条纹与熔体中温度波动而导致的生长速率波动有关.运用白光形貌拍摄到高清晰的劳埃斑,表明晶体为三方结构.     

大尺寸单晶金刚石制备的研究进展

单晶金刚石在电学,光学方面有着良好的应用前景,已经成为金刚石领域的研究焦点之一.本文论述了大尺寸单晶金刚石的制备方法、生长条件、研究现状以及存在的缺陷,概述了制备单晶金刚石过程中出现的问题并针对部分问题提出改善措施.     

热注射法合成Cu2 SnSe3纳米晶及其光电转换性能

以乙酰丙酮铜、无水氯化亚锡为金属源,Se/OLA悬浊液为硒源,在油胺溶剂中热注射合成了Cu2 SnSe3纳米晶.采用TEM、XRD、EDS分别对典型纳米晶产物的形貌、物相和组成做了分析表征.通过不同反应温度的条件实验,研究了反应温度对最终产物的影响,探讨了相关规律.采用光电化学池评价了纳米晶的光电转换性能,结果表明Cu2 SnSe3纳米晶光电转换性能优良,表现出较好的应用前景.     

Characterization of the carrot defect in 4H-SiC epitaxial layers

Characterization of the epitaxial defect known as the carrot defect was performed in thick 4H-SiC epilayers. A large number of carrot defects have been studied using different experimental techniques such as Nomarski optical microscopy, KOH etching, cathodoluminescence and synchrotron white beam X-ray topography. This has revealed that carrot defects appear in many different shapes and structures in the epilayers. Our results support the previous assignment of the carrot defect as related to a prismatic stacking fault. However, we have observed carrot defects with and without a visible threading dislocation related etch pit in the head region, after KOH etching. Polishing of epilayers in a few μm steps in combination with etching in molten KOH and imaging using Nomarski optical microscope has been used to find the geometry and origin of the carrot defects in different epilayers. The defects were found to originate both at the epi-substrate interface and during the epitaxial growth. Different sources of the carrot defect have been observed at the epi-substrate interface, which result in different structures and surfaces appearance of the defect in the epilayer. Furthermore, termination of the carrot defect inside the epilayer and the influence of substrate surface damage and growth conditions on the density of carrot defects are studied.     

X‐ray Topographic Characterization of L‐Arginine Phosphate Monohydrate Crystals

L‐arginine phosphate monohydrate (LAP) organic crystals were investigated by X‐ray Lang topography. Selected topographs of nearly perfect seeded grown and self‐nucleated crystals show that typical defects inside are grown‐in and post‐growth dislocations, growth sector boundaries, and microbes, while their features are presented and discussed. No structural defects associated to the presence of step bunching on the (100) surface of the crystal have been observed by X‐ray topography.     

氮化镓纳米固体的合成及其激光拉曼光谱

利用氨热法合成了一种新型致密材料—氮化镓纳米固体。该纳米固体呈淡黄色,半透明,其组成颗粒的平均粒径为12nm,为六方纤锌矿型结构。与氮化镓单晶相比,在该纳米固体的激光拉曼光谱上观察到了由于纳米尺寸效应而引起的E2(high)声子带的红移、带的宽化和新的声子带(656cm-1和714cm-1)的出现     

KTP晶体的电光研究进展

本文简述了KTP晶体的电光性能并与KD*P、LN晶体进行了比较。概括了KTP晶体电光器件研究的主要进展。对水热法生长的KTP晶体和熔剂法生长的KTP晶体在电光应用中的优缺点进行了分析。最后介绍了熔剂法生长的低电导率KTP晶体在电光领域的应用研究。     

Pressure assisted evolution of defects in silicon

The effect of enhanced hydrostatic pressure following heat treatment on the evolution of point defects in neutron‐irradiated Czochralski‐grown silicon is investigated using infrared spectroscopy. The behavior of oxygen‐related defects, particularly of the VO and the VO₂ centers, is mainly studied using samples subjected to heat treatment under hydrostatic pressure. It is observed that (1) pressure accelerates the annealing process of the VO defects and enhances the growth of the VO₂ complexes and (2) the VO₂ concentration is larger than expected from the corresponding decay of the VO defects. The faster decay of the VO defects is attributed to a pressure‐induced decrease of their migration energy. The larger VO₂ concentration is also discussed. One possible explanation is that pressure stimulates an additional mechanism for the formation of the VO₂ defects, which involves the reaction of oxygen dimers with vacancies. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

凝胶浇注法制备中温固体氧化物燃料电池Sm_(0.5)Sr_(0.5)Co_(1-x)Fe_xO_(3-δ)多孔阴极材料的研究

以碳酸盐和氧化物为原料,通过凝胶浇注法制得了Sm_(0.5)Sr_(0.5)Co_(1-x)Fe_xO_(3-δ)(SSCF, x=0～1.0)粉体,对不同温度煅烧所得粉体的相组成和微观形貌进行了测定.制备的Sm_(0.5)Sr_(0.5)Co_(1-x)Fe_xO_(3-δ)粉体模压成形后烧结得到SSCF烧结体.测定了烧结体的密度和孔隙率并对烧结体的微观结构进行了观测,用直流四端子法测定了烧结样品的电导率并对其热膨胀系数及电化学性能等进行了测定.结果表明:干凝胶在1000 ℃煅烧可以得到粒度均匀细小的SSCF粉体,其晶体结构随Fe含量发生变化;一定温度烧结的Sm_(0.5)Sr_(0.5)Co_(1-x)Fe_xO_(3-δ)材料具有多孔结构,随烧结温度的增加,烧结体的密度增大,孔隙率减小;Fe的掺杂降低了Sm_(0.5)Sr_(0.5)CoO_(3-δ)材料的热膨胀系数,Sm_(0.5)Sr_(0.5)Co_(0.2)Fe_(0.8)O_(3-δ)材料在800 ℃时的热膨胀系数为16.4×10~(-6) K~(-1);SSCF材料的电导率随Fe含量的增加而减小,但在500～800 ℃,其电导率均大于100 S·cm~(-1).此外,Sm_(0.5)Sr_(0.5)Co_(1-x)Fe_xO_(3-δ)材料均表现出良好的催化活性.     

rGO/TiO2及其三元复合材料光催化性能的研究进展

rGO/TiO2复合材料优异的光催化性能为其在有机染料降解,雨水消毒和催化析氢等方面的应用提供可能,通过与金属、金属化合物或高聚物复合可提升光催化效率和化学稳定性.分析反应机理,阐述现阶段研究的重点和不足,同时对未来发展和应用进行展望.     

Transient and quasi‐stationary simulation of heat and mass transfer in Czochralski silicon crystal growth

The formation of grown‐in defects in silicon crystals is controlled by the concentration of intrinsic point defects. Under steady state conditions the type of the prevailing point defect species is linked to the ratio of pull rate and temperature gradient in the crystal at the solidification front. It has been shown that this ratio as well as computed point defect distributions are in good agreement with experimental data. In this paper we compare a coupled transient heat transfer and transient point defect transport model with quasi steady state simulations at various time steps. Both simulations show the same qualitative results, quantitative differences in temperature are less than 1 %. But already for constant pull rates the defect distributions show qualitative differences between transient and quasi steady state simulations. Therefore, for a detailed understanding how defects are related to growth conditions, the thermal history should not be neglected.