Polarization of Luminescence in the Nanostructure Si/CaF<Subscript>2</Subscript> Upon Polarization of the Nuclear Spins of Fluorine

The laws governing polarization of luminescence in the nanostructure Si/CaF₂ upon polarization of the spins of the fluorine nuclei by means of optical excitation of charge carriers are considered theoretically. The possibility of studying experimentally the properties of nuclear spins in analyzing luminescence is shown. The polarization of luminescence is most informative in the range of excitation rates of charge carriers from 3⋅10⁷ to 3⋅ 10⁸ sec⁻¹ with the CaF₂ layer of thickness from 0.6 to 0.8 nm and optical excitation polarization degree of 0.1. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 4, pp. 524–529, July–August, 2005.     

Charge carrier mobility in crystals of the Pb<Subscript>0.67</Subscript>Cd<Subscript>0.33</Subscript>F<Subscript>2</Subscript> superionic conductor

The frequency (ν = 10^?1–10⁷ Hz) dependences σ(ν) of the conductivity of single crystals of the Pb_0.67Cd_0.33F₂ superionic conductor with the fluorite-type structure (CaF₂) in the temperature range of 132–395 K have been studied. The dependences σ(ν) have been discussed in the framework of the hopping relaxation of ionic carriers, which are mobile anions F^?. From experimental curves σ(ν), the direct-current (dc) conductivity σ_dc and the average charge carrier hopping frequency ν_h have been determined. This has made it possible to calculate the charge carrier mobility μ_mob and charge carrier concentration n _mob in these crystals. At room temperature (293 K), the electrical parameters are σ_dc = 1.6 × 10^?4 S/cm, ν_h = 2.7 × 10⁷ Hz, μ_mob = 2.0 × 10^?7 cm²/(s V), and n _mob = 5.1 × 10²¹ cm^?3.     

Features of the surface morphology of CaF<Subscript>2</Subscript>/Si(100) films obtained by solid-phase epitaxy

The dielectric parameters of calcium fluoride films grown on the Si(100) surface by solid-phase epitaxy (group 2) and without it (group 1) are analyzed. It is established experimentally that the deposition mode of CaF₂ films immediately after growth of the Si buffer layer at a substrate temperature of 530°C is not suitable for producing high-quality dielectric layers. The use of solid-phase epitaxy at the initial stage of the nucleation of CaF₂ layers enables the production of single crystal uniformly thick films with high dielectric properties.     

Spin Polarization of Fluorine Nuclei in the Si/CaF<Subscript>2</Subscript> Nanostructure Under Optical Excitation

The laws of fluorine nuclear spin polarization in the Si/CaF₂ nanostructure under optical excitation of the charge carriers in it has been considered theoretically. It has been shown that maximum values (up to 3% of the concentration of nuclei in the lattice) are attained under a high rate of optical excitation (>10⁻⁹ sec⁻¹) when the nuclear spin diffusion process and the Auger recombination prevail. In this case, the nuclear relaxation time in an individual layer reaches 100–300 sec and the spin diffusion radius decreases to 0.3 nm. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 3, pp. 397–403, May–June, 2005.     

Observations on a high temperature peak in the thermoluminescence of fluorites

A new peak at about 650°C has been observed in the thermoluminescence emission of gamma irradiated natural fluorites containing significant quantities of lanthanide rare-earth (RE) elements as impurities. Thermal activation energy of the corresponding trap has been evaluated to be 2·99 eV with a frequency factor of 10¹⁶ sec⁻¹. The optical activation energy, as deduced from photo-transfer-induced-TL from this trap, is 5·36 eV. Many types of natural fluorites as well as synthetically grown CaF₂ crystals doped with single and pairs of rare earth elements have been studied and the results indicate that the high temperature peak is associated with Sm impurity coexisting with Y, La or Ce in CaF₂. There are indications that this newly observed TL peak can be gainfully employed in ultraviolet dosimetry and geological dating of fluorite deposits.     

TCAD simulation of tunneling leakage current in CaF2/Si(111) MIS structures

We introduce a simulation technique suitable to model the tunneling leakage current in the metal(polySi)/CaF₂/Si(111) MIS structures using TCAD simulators Minimos-NT and ViennaSHE. The simulations are performed using the real physical parameters of the CaF₂/Si tunnel barrier. The results obtained for the case of near-equilibrium carrier transport are in a good agreement with experimental data and also with the simulation results yielded by our reference physical model. The obtained non-equilibrium hot-electron tunnel leakages in the hypothetical transistors with CaF₂ as a gate dielectric are comparable to those in the structures with silicon dioxide. Being an important step forward for the device application of calcium fluorite, this work opens the possibility of simulating the characteristics of different silicon-based systems with crystalline insulators.     

Structure and electrical properties of HfO<Subscript>2</Subscript> high-<Emphasis Type="Italic">k</Emphasis> films prepared by pulsed laser deposition on Si (100)

High-k gate dielectric hafnium dioxide films were grown on Si (100) substrate by pulsed laser deposition at room temperature. The as-deposited films were amorphous and that were monoclinic and orthorhombic after annealed at 500°C in air and N₂ atmosphere, respectively. After annealed, the accumulation capacitance values increase rapidly and the flat-band voltage shifts from −1.34 V to 0.449 V due to the generation of negative charges via post-annealing. The dielectric constant is in the range of 8–40 depending on the microstructure. The I–V curve indicates that the films possess of a promising low leakage current density of 4.2×10⁻⁸ A/cm² at the applied voltage of −1.5 V.     

Femtosecond laser plasma in CaF<Subscript>2</Subscript> crystal microchannel and effective generation of characteristic X-ray radiation

The dependence of the characteristic X-ray radiation yield from CaF₂ crystal on the formed microchannel depth under highly intensive (I ∼ 3 × 10¹⁵ W/cm²) laser pulses with different contrast was obtained. The maximum of the characteristic X-ray radiation yield at these experimental conditions corresponded to the microchannel depth of 30–50 μm. The efficiency of the laser radiation conversion to the characteristic X-ray radiation increased from 6 × 10⁻⁸ for the surface up to 10⁻⁷ in the microchannel. The dependence of the characteristic X-ray radiation yield on the viewing angle showed that the source of X-ray radiation was located near the surface inside the microchannel.     

Ferroelectric and dielectric properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> thin films grown on Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> film layer

Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi₄Ti₄O₁₅ grown on Bi₄Ti₃O₁₂, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO₂/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P _r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm² at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 10¹⁰ switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi₄Ti₄O₁₅ on Bi₄Ti₃O₁₂ ferroelectric thin films were better than those of the SrBi₄Ti₄O₁₅ grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth kinetics of SrBi₄Ti₄O₁₅ on the c-axis-oriented Bi₄Ti₃O₁₂ layer or on the Pt-coated Si substrate.     

Thermo-optic coefficients of monoclinic KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>

The three thermo-optic coefficients of the biaxial laser host KLu(WO₄)₂ are measured at 633 nm by a deflection method. Their values at 300 K amount to ∂ n _g /∂ T=−7.4×10⁻⁶ K⁻¹; ∂ n _m /∂ T=−1.6×10⁻⁶ K⁻¹ and ∂ n _p /∂ T=−10.8×10⁻⁶ K⁻¹. Nearly athermal propagation directions are found for polarizations along the N _m and N _p dielectric axes.     

Analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF<Subscript>2</Subscript>/Si/CaF<Subscript>2</Subscript> structures

The results of analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF₂/Si(111) structures in a wide temperature range from 100 to 600°С are presented. It is shown that the preliminary formation of a 2D Si buffer layer provides the two-dimensional growth of CaF₂ layers. Possible reasons which for the disruption of 2D growth at high substrate temperatures are discussed.     

Solid polymeric electrolyte of PVC–ENR–LiClO<Subscript>4</Subscript>

The ionic conductivity of PVC–ENR–LiClO₄ (PVC, polyvinyl chloride; ENR, epoxidized natural rubber) as a function of LiClO₄ concentration, ENR concentration, temperature, and radiation dose of electron beam cross-linking has been studied. The electrolyte samples were prepared by solution casting technique. Their ionic conductivities were measured using the impedance spectroscopy technique. It was observed that the relationship between the concentration of salt, as well as temperature, and conductivity were linear. The electrolyte conductivity increases with ENR concentration. This relationship was discussed using the number of charge carrier theory. The conductivity–temperature behaviour of the electrolyte is Arrhenian. The conductivity also varies with the radiation dose of the electron beam cross-linking. The highest room temperature conductivity of the electrolyte of 8.5 × 10⁻⁷ S/cm was obtained at 30% by weight of LiClO₄. The activation energy, E _a and pre-exponential factor, σ _o, are 1.4 × 10⁻² eV and 1.5 × 10⁻¹¹ S/cm, respectively.     

DLTS and in situ C–V analysis of trap parameters in swift 50 MeV Li3+ ion-irradiated Ni/SiO2/Si MOS capacitors

Ni/SiO₂/Si MOS structures were fabricated on n-type Si wafers and were irradiated with 50 MeV Li³⁺ ions with fluences ranging from 1×10¹⁰ to 1×10¹² ions/cm². High frequency C–V characteristics are studied in situ to estimate the build-up of fixed and oxide charges. The nature of the charge build-up with ion fluence is analyzed. Defect levels in bulk Si and its properties such as activation energy, capture cross-section, trap concentration and carrier lifetimes are studied using deep-level transient spectroscopy. Electron traps with energies ranging from 0.069 to 0.523 eV are observed in Li ion-irradiated devices. The dependence of series resistance, substrate doping and accumulation capacitance on Li ion fluence are clearly explained. The study of dielectric properties (tan δ and quality factor) confirms the degradation of the oxide layer to a greater extent due to ion irradiation.     

Infralow-frequency dielectric response of Pb<Subscript>3</Subscript>O<Subscript>4</Subscript> polycrystalline layers

This paper reports on the results of the investigation into the frequency dispersion of the capacitance and dielectric loss in capacitor structures based on red lead Pb₃O₄. It is established that, in the range of frequencies f = 1.50 × 10^?3?0.25 Hz, the capacitance decreases and the dielectric loss tangent increases with increasing frequency. The frequency dependence of the electrical conductivity in an alternating-current electric field indicates the applicability of the hopping model of charge transfer under normal conditions. The role of a lone electron pair of Pb²⁺ cations in dielectric polarization is discussed.     

Nature of low-energy excitations in La<Subscript>1.87</Subscript>Sr<Subscript>0.13</Subscript>CuO<Subscript>4</Subscript> superconducting cuprate

The spectra of the conductivity and dielectric constant of La_1.87Sr_0.13CuO₄ cuprate have been directly measured in the frequency range of 0.3 to 1.2 THz (10–40 cm⁻¹) and the temperature range of 5 to 300 K in the E | c polarization (the electric field vector of radiation is perpendicular to the copper-oxygen planes). Excitation has been observed in the superconducting phase, and its nature has been attributed to the transverse optical excitation of the condensate of Cooper pairs, which appears because Josephson junctions between CuO planes are modulated due to in-plane magnetic and charge stripes. Additional quasiparticle absorption of unknown origin has been detected at frequencies below ≈15 cm⁻¹ at liquid helium temperatures.     

Dielectric response of doped Bi<Subscript>12</Subscript>TiO<Subscript>20</Subscript>: Ru crystals in an alternating electric field

The results of examination of AC dependences of capacitance and dielectric loss tangent of sillenite Bi₁₂TiO₂₀ crystals doped with ruthenium on frequency are presented. Non-Debye dispersion of dielectric coefficients is found in the frequency interval of 5 × 10²–10⁵ Hz, and a resonance phenomenon is observed. Polarization processes in the studied samples are attributed to relaxators associated with metal–oxygen vacancies and structural elements incorporating 6s² lone-pair electrons.     

Structural and electrical properties of a high-k SmAlO3 charge trapping flash memory

In this study, we proposed the Al/Al₂O₃/SmAlO₃/SiO₂/Si flash memory devices using high-k SmAlO₃ film as a charge trapping layer and high-k Al₂O₃ film as a blocking layer. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopic and atomic force microscopy. The SmAlO₃ flash memory devices annealed at 800 °C showed excellent electrical properties, such as a large memory window of ～2.61 V (measured at a sweep voltage range of ±5 V) and a small charge loss of ～7.1% (measured time up to 10⁴ s). In addition, the charge trap centroid and charge trap density were extracted by constant current stress method.     

On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF<Subscript>2</Subscript> films

The effect of preliminary low-energy (~1 keV) and low-dose (~10¹²–10¹⁴ cm^–2) ion bombardment on the initial stages of growth of Si films on a CaF₂/Si surface is investigated. Ordered nanocrystal phases (thickness less than 5–6 monolayers) and homogeneous epitaxial nanofilms (thickness more than 8–10 monolayers) of silicon are shown to be formed after annealing.     

Relaxation phenomena in TlGa<Subscript>0.99</Subscript>Fe<Subscript>0.01</Subscript>Se<Subscript>2</Subscript> single crystals

The relaxation electronic phenomena occurring in TlGa_0.99Fe_0.01Se₂ single crystals in an external dc electric field are investigated. It is established that these phenomena are caused by electric charges accumulated in the single crystals. The charge relaxation at different electric field strengths and temperatures, the hysteresis of the current-voltage characteristic, and the electric charge accumulated in the TlGa_0.99Fe_0.01Se₂ single crystals are consistent with the relay-race mechanism of transfer of a charge generated at deep-lying energy levels in the band gap due to the injection of charge carriers from the electric contact into the crystal. The parameters characterizing the electronic phenomena observed in the TlGa_0.99Fe_0.01Se₂ single crystals are determined to be as follows: the effective mobility of charge carriers transferred by deep-lying centers μ_f=5.6×10^?2 cm²/(V s) at 300 K and the activation energy of charge transfer ΔE=0.54 eV, the contact capacitance of the sample C _c =5×10^?8 F, the localization length of charge carriers in the crystal d _c =1.17×10^?6 cm, the electric charge time constant of the contact τ=15 s, the time a charge carrier takes to travel through the sample t _t =1.8×10^?3 s, and the activation energy of traps responsible for charge relaxation ΔE _σ = ΔE _Q = 0.58 eV.     

Influence of the Si/SiO<Subscript>2</Subscript> interface on the charge carrier density of Si nanowires

The electrical properties of Si nanowires covered by a SiO₂ shell are influenced by the properties of the Si/SiO₂ interface. This interface can be characterized by the fixed oxide charge density Q_f and the interface trap level density D_it. We derive expressions for the effective charge carrier density in silicon nanowires as a function of Q_f, D_it, the nanowire radius, and the dopant density. It is found that a nanowire is fully depleted when its radius is smaller than a critical radius a_crit. An analytic expression for a_crit is derived. PACS 68.65.-k; 61.46.+w; 81.10.Bk