AFM measurement of atomic-scale Si surface etching by active oxidation

Atomic-scale etching of a clean Si surface by active oxidation with oxygen molecules was examined using ex-situ atomic force microscopy (AFM). The etch rate was directly determined by measuring the etch depth with AFM. A SiO₂ anti-etching mask was used on a H-terminated Si(001)-2 × 1:H surface prepared by low pH HF treatment followed by annealing in H₂. The etch rate under active oxidation conditions was almost proportional to the O₂ pressure, which was consistent with previous reports. The etch rate exhibited a weak temperature dependence with an apparent activation energy of 0.2 eV. A distinct transition of the reaction mode from etching to oxide formation was observed in detail as an abrupt decrease of the etch rate by lowering the temperature near the boundary condition between the etching and oxide formation conditions.     

An all-ZnO microbolometer for infrared imaging

Microbolometers are extensively used for uncooled infrared imaging applications. These imaging units generally employ vanadium oxide or amorphous silicon as the active layer and silicon nitride as the absorber layer. However, using different materials for active and absorber layers increases the fabrication and integration complexity of the pixel structure. In order to reduce fabrication steps and therefore increase the yield and reduce the cost of the imaging arrays, a single layer can be employed both as the absorber and the active material. In this paper, we propose an all-ZnO microbolometer, where atomic layer deposition grown zinc oxide is employed both as the absorber and the active material. Optical constants of ZnO are measured and fed into finite-difference-time-domain simulations where absorption performances of microbolometers with different gap size and ZnO film thicknesses are extracted. Using the results of these optical simulations, thermal simulations are conducted using finite-element-method in order to extract the noise equivalent temperature difference (NETD) and thermal time constant values of several bolometer structures with different gap sizes, arm and film thicknesses. It is shown that the maximum performance of 171 mK can be achieved with a body thickness of 1.1 μm and arm thickness of 50 nm, while the fastest response with a time constant of 0.32 ms can be achieved with a ZnO thickness of 150 nm both in arms and body.     

Scanning probe oxidation of Si3N4 masks for nanoscale lithography,micromachining, and selective epitaxial growth on silicon

For studying the physical, chemical, and electronic properties of ultrasmall man-made structures, the major challenge is to fabricate highly uniform structures and control their positions on the nanometer length scale. Local oxidation of metals and semiconductors using a conductive-probe atomic force microscope (AFM) or other scanning probe microscopes in air at room temperature has emerged as a simple and universal method for this purpose. Here the uses of scanning probe oxidation of Si₃N₄ masks for performing nanolithography, nanomachining, and nanoscale epitaxial growth on silicon are reviewed. The three most unique features of this approach are presented: (1) exceptionally fast oxidation kinetics using silicon nitride masks (∼30 μm/s at 10 V for a ∼5-nm-thick film); (2) selective-area anisotropic etching of Si using a Si₃N₄ etch mask; and (3) selective-area chemical vapor deposition of Si using a SiO₂/Si₃N₄ bilayer growth mask.     

Design,optimization and fabrication of 2D photonic crystals for solar cells

This paper presents the optimization of 2D photonic crystals (PCs) onto Si wafers to improve the performance of c-Si PV cells. The objective is to find a structure capable of minimizing the reflectance of the Si wafer in the spectral range between 400 nm and 1000 nm. The study has been limited to PCs that can be fabricated and characterized with the tools and technology available and to dimensions in the same order as the visible light wavelength. PCs with different shapes and dimensions have been simulated and finally the optimum structure has been fabricated by a process based on laser interference lithography (LIL) and reactive ion etching (RIE). This optimized PC presents an average reflectance of 3.6% in the selected wavelength range, without any other material used as antireflective coating. This result means a drastic reduction in comparison with reflectance obtained out of the standard wet etch texturization used in current solar cell manufacturing lines.     

General regression neural network for prediction of sound absorption coefficients of sandwich structure nonwoven absorbers

In this paper, we propose a more general forecasting method to predict the sound absorption coefficients at six central frequencies and the average sound absorption coefficient of a sandwich structure nonwoven absorber. The kernel assumption of the proposed method is that the acoustics property of sandwich structure nonwoven absorber is determined by some easily measured structural parameters, such as thickness, area density, porosity, and pore size of each layer, if the type of the fiber used in nonwoven is given. By holding this assumption in mind, we will use general regression neural network (GRNN) as a prediction model to bridge the gap between the measured structural parameters of each absorber and its sound absorption coefficient. In experiment section, one hundred sandwich structure nonwoven absorbers are particularly designed with ten different types of meltblown polypropylene nonwoven materials and four types of hydroentangled E-glass fiber nonwoven materials firstly. Secondly, four structural parameters, i.e., thickness, area density, porosity, and pore size of each layer are instrumentally measured, which will be used as the inputs of GRNN. Thirdly, the sound absorption coefficients of each absorber are measured with SW477 impedance tube. The sound absorption coefficient at 125 Hz, 250 Hz, 500 Hz, 1000 Hz, 2000 Hz, 4000 Hz and their average value are used as the outputs of GRNN. Finally, the prediction framework will be carried out after the desired training set selection and spread parameter optimization of GRNN. The prediction results of 20 test samples show the prediction method proposed in this paper is reliable and efficient.     

Semiconductor type single wall carbon nanotube absorber for passive mode-locked Nd:YVO4 laser

The pure semiconductor type single wall carbon nanotubes (SWCNT) was transferred on hydrophilic glass substrate to fabricate saturable absorbers by vertical evaporation technique. The recovery time of the absorber is 350 fs. The saturation intensity of the absorber was found to be 115 μJ/cm² at 1060 nm. The modulation depth of the absorber could be about 7%. Passive mode-locked Nd:YVO₄ laser using this kind of absorber was demonstrated. The largest average output power of the mode-locked laser is 1.4 W at the pump power of 7.8 W. The continuous wave mode-locked pulses with the repetition of 80 MHz were achieved.     

Demagnifying high-resolution imaging based on a new system for nanolithography

A novel subdiffraction-limited photolithography design with demagnification and high contrast features has been presented in this paper. Alternating phase shift mask (Alt-PSM) is not only used for shifting phase between adjacent aperture pairs through the phase shifter, but also it enhances the transmission by the interference of diffracted evanescent waves from subwavelength apertures at the surface. Research results show that the combination of Alt-PSM and planar hyperlens can realize subwavelength plane-to-plane imaging beyond the diffraction limit. Furthermore, with a well-proportioned reduction factor of 2, the resolution down to 60 nm can be easily attained from an Alt-PSM with 255 nm period at a working wavelength of 365 nm. Actually finer resolution can be obtained if we properly optimize the parameters of the mask and the planar hyperlens.     

Saturable absorber at 940 nm using single wall carbon nanotubes deposited by vertical evaporation technique

The vertical evaporation technique allows us to fabricate aligned single wall carbon saturable absorbers. The nonlinear parameters of the absorber at the wavelength of 940 nm were measured. The measured bi-exponential lifetimes of the absorber are 330 fs and 850 fs, respectively. The saturation intensity and modulation depth were found to be 2000 μJ/cm² and 10% for SWCNT absorber at the direction of alignment, in comparison to 950 μJ/cm² and 7% for the SWCNT solution.     

Ferrofluidic masking of solid state nuclear track detectors during etching

This work presents a novel method for determining bulk etch rate of CR-39 during prolonged etching by masking the surface with a ferrofluidic film held in position by magnetostatic forces. The CR-39 etching conditions were 6.25 M NaOH solution for 24 h at temperatures ranging from 50 to 80 °C. After etching, the heights of the resulting un-etched plateaus were measured using a Talyscan 150 profilometer. The removed layer thicknesses ranged from 12 to 85 μm, giving corresponding bulk etch rates in the range 0.5–3.54 μm/h.     

A diode end-pumped passively Q-switched Nd:YAG/KTA Raman laser

A diode end-pumped passively Q-switched Nd:YAG/KTA intracavity Raman laser is presented. A KTA crystal with a size of 5 mm × 5 mm × 25 mm is used as the Raman active medium and its 234 cm^?1 Raman mode is employed to finish the conversion from 1064 nm fundamental laser to 1091 nm Raman laser. A 2 mm thick Cr⁴⁺:YAG crystal is used as the saturable absorber. With an LD pump power of 7.5 W, the first-Stokes power of 250 mW is obtained with a pulse repetition frequency of 14.5 kHz. The corresponding diode-to-Stokes conversion efficiency is 3.3% and the pulse energy is 17.2 μJ. Pulse width is measured to be 12.6 ns and peak power is 1.4 kW.     

Strain engineering tunable nanotemplates on the Cu(110)–(2 × 1)–O surface

We present an STM study on the domain pattern formation of the Cu(110)–O surface. We found that the separation of the oxygen adsorbate phase into the domain pattern is consistent with a phenomenological model of size-dependent elastic relaxation of the strained surface. We developed a thermally assisted oxygen adsorption procedure aiming to control the size of the two-dimensional (2 × 1)–O islands nucleated at the surface under oxygen adsorption serving as precursors for domain pattern formation. We engineered wide range tuneable (2 × 1)–O domain patterns by controlling the nuclei size and the oxygen coverage at the pattern formation stage.     

Three-dimensional space charge cartographies by FLIMM in electron irradiated polymers

High resolution three-dimensional space charge cartographies obtained on 50 μm PTFE samples by using FLIMM technique are presented in this article. Samples were irradiated by a 30 keV electron beam. Charges were injected according to the grid pattern put on the sample during irradiation. A new measurement strategy associated with a new set-up leads to an improvement in measurements accuracy and precision. With this new strategy, measurements were performed rapidly, at a chosen depth and with a low lateral resolution in order to map the space charge profile in the whole sample and to choose a study area. After selecting an interesting area, space charge cartographies were carried out with a very high lateral resolution of about 1 μm. The irradiated zones according to the grid pattern were well reconstructed and the injection depth did not exceed 4 μm.     

Wall paper single-walled carbon nanotubes absorber for passively mode-locked Nd: GdVO4 laser

A novel and low-cost wall paper single-walled carbon nanotubes (SWCNTs) absorber was fabricated by high viscosity of polyvinyl alcohol (PVA) aqueous solution and vertical evaporation technique. Sandwich structure wall paper SWCNT (SSWA-SWCNT) absorber was constructed by a piece of wall paper SWCNT absorber, a piece of round quartz and an output coupler mirror. We exploited it to realize mode locking operation in a diode-pumped Nd: GdVO₄ laser. A pulse duration of 9.6 ps was produced with an average power of 870 mW. The stable mode locking operation was obtained when the average power is less than 300 mW.     

Laser diode end-pumped passively Q-switched Tm,Ho:YLF laser with Cr:ZnS as a saturable absorber

Output performance of a continuous-wave (CW) laser diode end-pumped passively Q-switched Tm,Ho:YLF laser is demonstrated with a Cr:ZnS crystal as the saturable absorber. We particularly investigate the influence of saturable absorber's position in the resonator when the Cr:ZnS crystal is placed close to and far from the laser beam waist. We compare the experimental results at the two different positions, and find that the laser shows unusual output characteristics when the Cr:ZnS saturable absorber is placed close to the beam waist. The pulse width and the pulse energy almost keep constant, measured about 1.25 μs and 4 μJ respectively, when the pump power is changed in the range of 1–1.9 W. Moreover, the pulse repetition frequency can be tuned between 1.3 kHz and 2.6 kHz by changing the pump power. The output wavelength of the passively Q-switched laser shifts to 2053 nm from 2067 nm in CW operation.     

The fabrication of aspherical microlenses using focused ion-beam techniques

Aspheric lenses are the most common method for correcting for spherical aberrations but, in microlens production, highly-controlled lens profiles are hard to achieve. We demonstrate a technique for creating bespoke, highly-accurate aspheric or spherical profile silicon microlens moulds, of almost any footprint, using focused ion-beam milling. Along with this, we present a method of removing induced ion-beam damage in silicon, via a hydrofluoric acid etch, helping to recover the surface's optical and chemical properties.In this paper, we demonstrate that our milled and etched moulds have a roughness of 4.0–4.1 nm, meaning they scatter less than 1% of light, down to wavelengths of 51 nm, showing that the moulds are suitable to make lenses that are able to handle light from UV up to infra-red.Using empirical experiments and computer simulations, we show that increasing the ion-dose when milling increases the amount of gallium a hydrofluoric acid etch can remove, by increasing the degree of amorphisation within the surface. For doses above 3000 μC/cm² this restores previous surface properties, reducing adhesion to the mould, allowing for a cleaner release and enabling higher quality lenses to be made.Our technique is used to make aspheric microlenses of down to 3 μm in size, but with a potential to make lenses smaller than 1 μm.     

Deep sub micrometer imaging of defects in copper pillars by X-ray tomography in a SEM

The potential of X-ray nanotomography hosted in a SEM in presented in this paper. In order to improve the detail detectability of this system, which is directly related to the X-ray source size, thin metal layers have been studied and installed in the equipment. A 3D resolution pattern has been created in order to determine the smallest detectable features by this setup. This sample is a 25 μm diameter copper pillar in which size-controlled holes have been milled using a plasma-focused ion beam. This pattern has then been scanned and the resulting 3D reconstruction demonstrates that the instrument is able to detect 500 nm diameter voids in a copper interconnection, as used in 3D integration.     

Mechano-chemical AFM nanolithography of metallic thin films: A statistical analysis

A mechano-chemical atomic force microscope (AFM) nanolithography on a metallic thin film (50 nm in thickness) covered by a spin-coated soft polymeric mask layer (50–60 nm in thickness) has been introduced. The surface stochastic properties of initial grooves mechanically patterned on the mask layer (grooves before chemical wet-etching) and the lithographed patterns on the metallic thin film (the grooves after chemical wet-etching) have been investigated and compared by using the structure factor, power spectral density, and AFM tip deconvolution analyses. The effective shape of cross section of the before and after etching grooves have been determined by using the tip deconvolution surface analysis. The wet-etching process improved the shape of the grooves and also smoothed the surface within them. We have indicated that relaxation of the surface tension of the deposited mask layer after the AFM scribing is independent from surface density of the grooves and also their length scale. Based on the statistical analysis, it was found that increase of the width of the grooves after the wet-etching and also relaxation of surface tension of the mask layer resulted in a down limit in the size of the metallic nanowires made by the combined nanolithography method. An extrapolation of the analyzed statistical data has indicated that, in this method, the minimum obtainable width and length of the metallic nanowires are about 55 nm and 2 μm, respectively.     

Using high haze (> 90%) light-trapping film to enhance the efficiency of a-Si:H solar cells

The high haze light-trapping (LT) film offers enhanced scattering of light and is applied to a-Si:H solar cells. UV glue was spin coated on glass, and then the LT pattern was imprinted. Finally, a UV lamp was used to cure the UV glue on the glass. The LT film effectively increased the Haze ratio of glass and decreased the reflectance of a-Si:H solar cells. Therefore, the photon path length was increased to obtain maximum absorption by the absorber layer. High Haze LT film is able to enhance short circuit current density and efficiency of the device, as partial composite film generates broader scattering light, thereby causing shorter wave length light to be absorbed by the P layer so that the short circuit current density decreases. In case of lab-made a-Si:H thin film solar cells with v-shaped LT films, superior optoelectronic performances have been found (V_oc = 0.74 V, J_sc = 15.62 mA/cm², F.F. = 70%, and η = 8.09%). We observed ~ 35% enhancement of the short-circuit current density and ~ 31% enhancement of the conversion efficiency.     

Diode-pumped passively mode-locked Nd:Lu0.15Y0.85VO4 laser with a single-walled carbon nanotube saturable absorber

Diode-pumped passively mode-locked Nd:Lu_0.15Y_0.85VO₄ laser with a single-walled carbon nanotube saturable absorber was demonstrated for the first time, to our best knowledge. The laser generated 19-ps pulses with maximum output power of 902 mW for the incident pump power of 6.5 W at the central wavelength of 1064 nm, giving an optical conversion efficiency of 14%. The continuous wave mode-locking conditions of single-walled carbon nanotube saturable absorber were analyzed and discussed.     

Device-level vacuum packaged uncooled microbolometer on a polyimide substrate

Uncooled infrared detectors (IR) on a polyimide substrate have been demonstrated where amorphous silicon (a-Si) was used as the thermometer material. New concepts in uncooled microbolometers were implemented during the design and fabrication, such as the integration of a germanium long-pass optical filter with the device-level vacuum package and a double layer absorber structure. Polyimide was used for this preliminary work towards vacuum-packaged flexible microbolometers. The detectors were fabricated utilizing a carrier wafer and low adhesion strength release layer to hold the flexible polyimide substrate during fabrication in order to increase the release yield. The IR detectors showed a maximum detectivity of 4.54 × 10⁶ cm Hz^1/2/W at a 4 Hz chopper frequency and a minimum noise equivalent power (NEP) of 7.72 × 10⁻¹⁰ W/Hz^1/2 at a biasing power of 5.71 pW measured over the infrared wavelength range of 8–14 μm for a 35 μm × 35 μm detector. These values are comparable to other flexible microbolometers with device-level vacuum packaging which are found in literature.