Thin TiO2 grown by metal–organic chemical vapor deposition on (NH4)2S x -treated InP

The electrical characteristics of thin TiO₂ films prepared by metal–organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO₂ film of 4.7 nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8×10⁻² and 1.1×10⁻⁴ A/cm² at +2 V bias and 1.6×10⁻¹ and 8.3×10⁻⁴ A/cm² at −2 V bias. The lower leakage currents of TiO₂ with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5×10¹³ cm², respectively. The lowest mid-gap interface state density is around 7.6×10¹¹ cm⁻² eV⁻¹. The equivalent oxide thickness is 0.52 nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6 nm and reaches 9.3 MV/cm at 2.5 nm.     

Measurements of the temperature and water vapor concentration in a hot zone by tunable diode laser absorption spectrometry

A tunable diode laser absorption spectroscopy (TDLAS) technique and appropriate instrumentation was developed for the measurement of temperature and water vapor concentrations in heated gases. The technique is based on the detection of the spectra of H₂O absorption lines with different energies of low levels. The following absorption lines of H₂O were used: 7189.344 cm⁻¹ (E″=142 cm⁻¹), 7189.541 cm⁻¹ (E″=1255 cm⁻¹), 7189.715 cm⁻¹ (E″=2005 cm⁻¹). Spectra were recorded using fast frequency scanning of a single distributed feedback (DFB) laser. A unique differential scheme for the recording of the absorption spectra was developed. An optimal technique for fitting the experimental spectra was developed.     

Supercapacitor devices using porous silicon electrodes

Electrical double layer (EDL) supercapacitors have been constructed using gold coated porous silicon (PSi) electrodes in a 0.25 M TEABF₄/PC solution. As a comparison with the PSi, graphite paper, carbon cloth and ITO on glass electrodes have also been tested using the same electrolyte. The capacitors have been characterised using a.c. impedance spectroscopy and cyclic voltammetry (normal staircase mode). Devices using PSi electrodes showed a capacitance of approximately 0.2 mF cm⁻² (equivalent to 5 mF g⁻¹). In comparison, devices based on ITO on glass electrodes had a capacitance of 0.76 mF cm⁻². Those based on graphite-paper electrodes gave 10 mF cm⁻² (equivalent to 131 mF g⁻¹) and those using carbon cloth gave 600 mF cm⁻² (equivalent to 35 F g⁻¹). Paper presented at the 6th Euroconference on Solid State Ionics, Cetraro, Calabria, Italy, Sept. 12–19, 1999.     

Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet–NO Ge-surface pretreatment

Reactive cosputtering is employed to prepare high-permittivity HfTiO gate dielectric on n-Ge substrate. Effects of Ge-surface pretreatment on the interface and gate leakage properties of the dielectric are investigated. Excellent performances of Al/HfTiO/GeO _x N _y /n-Ge MOS capacitor with wet–NO surface pretreatment have been achieved with a interface-state density of 2.1×10¹¹ eV⁻¹ cm⁻², equivalent oxide charge of −7.67×10¹¹ cm⁻² and gate leakage current density of 4.97×10⁻⁵ A/cm² at V _g =1 V.     

Excimer-laser ablation and micro-patterning of ceramic Si3N4

3 N₄ has been investigated. The ablation threshold in air, Φ_th, is around 0.3±0.1 J/cm² with ArF- and 0.9±0.2 J/cm² with KrF-laser radiation. With fluences Φ_th<Φ<4 J/cm² the irradiated surface is either very flat or it exhibits a cone-type structure, depending on the number of laser pulses employed. With fluences of 5 to 10 J/cm², the sample surface becomes very smooth, much smoother than the original mechanically polished surface. Pores, scratches, and cracks observed on the non-irradiated surface are absent within the illuminated area. In this regime, the ablation rates are typically 0.1 to 0.2 μm/pulse. Received: 10 April 1997/Accepted: 11 April 1997     

Spectroscopic characteristics of erbiumand ytterbium-activated laser media

Judd–Ofelt parameters (Ω₂ = 5.09∙10^–20, Ω₄ = 0.92∙10^–20, and Ω₆ = 0.63∙10^–20 cm²) and oscillator strengths of fundamental optical transitions involved in lasing at wavelength 1.54 μm have been calculated for borosilicophosphate glass co-activated with Er³⁺ and Tb³⁺ ions based on experimental luminescence and absorption spectra and refractive indices. The results were used to determine the emission (6∙10^–23 cm²) and absorption (5∙10^–21 cm²) cross sections for λ = 1.54 μm and the gain cross section as a function of inverse population levels.     

Polarized absorption spectra of Co2+ in Na2Cd3Cl8 single crystals

Summary The polarized optical absorption spectra of Na₂Cd₃Cl₈: Co²⁺ in the range of 15 000 to 40 000 cm⁻¹ down to 15 K are reported. The Co²⁺ ion is found to occupy the Cd²⁺ sites in octahedral geometry and the spectra are interpreted satisfactorily in terms of a cubic ligand field model including spin-orbit coupling. The observed crystal field spectra are well reproduced withB=745 cm⁻¹,C=3410 cm⁻¹,Dq=700 cm⁻¹ and ζ (spin-orbit interaction) =520 cm⁻¹. No spectral evidence for tetragonal distortion is observed.     

Aerosol deposition of detonation nanodiamonds used as nucleation centers for the growth of nanocrystalline diamond films and isolated particles

The aerosol deposition of detonation nanodiamonds (DNDs) on a silicon substrate is comprehensively studied, and the possibility of subsequent growth of nanocrystalline diamond films and isolated particles on substrates coated with DNDs is demonstrated. It is shown that a change in the deposition time and the weight concentration of DNDs in a suspension in the range 0.001–1% results in a change in the shape of DND agglomerates and their number per unit substrate surface area N _s from 10⁸ to 10¹¹ cm⁻². Submicron isolated diamond particles are grown on a substrate coated with DND agglomerates at N _s ≈ 108 cm⁻² using microwave plasma-enhanced chemical vapor deposition. At N _s ≈ 10¹⁰ cm⁻², thin (∼100 nm) nanodiamond films with a root-mean-square surface roughness less than 15 nm are grown.     

Three-dimensional simulation of laser–plasma-based electron acceleration

A sequential three-dimensional (3D) particle-in-cell simulation code PICPSI-3D with a user friendly graphical user interface (GUI) has been developed and used to study the interaction of plasma with ultrahigh intensity laser radiation. A case study of laser–plasma-based electron acceleration has been carried out to assess the performance of this code. Simulations have been performed for a Gaussian laser beam of peak intensity 5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 1 × 10¹⁹ cm^− 3, and for a Gaussian laser beam of peak intensity 1.5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 3.5 × 10¹⁹ cm^− 3. The electron energy spectrum has been evaluated at different time-steps during the propagation of the laser beam. When the plasma density is 1 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~14 MeV, with an energy spread of ±7 MeV. On the other hand, when the plasma density is 3.5 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~23 MeV, with an energy spread of ±7.5 MeV.     

Background neutron in the endcap and barrel regions of resistive plate chamber for compact muon solenoid/large hadron collider using GEANT4

In this study the performance of double gap RPC has been tested by GEANT4 Monte Carlo simulation code. The detector response calculations taken as a function of the neutron energy in the range of 0.01 eV-1 GeV have been simulated through RPC set-up. In order to evaluate the response of detector in the LHC background environment, the neutron spectrum expected in the CMS muon endcap and barrel region were taken into account. A hit rate of about 165.5 Hz cm⁻², 34 Hz cm⁻², 33.6 Hz cm⁻², and 27.0 Hz cm⁻² due to an isotropic neutron source is calculated using GEANT4 standard electromagnetic package for a 20 × 20 cm² RPC in the ME1, ME2, ME3 and ME4, respectively. While for the same neutron source and using GEANT4 package a hit rate of about 0.42 Hz cm⁻², 0.7182 Hz cm⁻² was measured for the MB1 and MB4 stations respectively. Similar characteristics of hit rates have been observed for GEANT4 low electromagnetic package.      

Enhanced stimulated Raman scattering by intermolecular Fermi resonance

We demonstrate the stimulated Raman scattering (SRS) of a binary solution of toluene and m-xylene at different volume concentrations in liquid-core optical fiber (LCOF). The results show that SRS of three vibration modes of 1002 cm⁻¹,2920 cm⁻¹ and 3058 cm⁻¹ bands are simultaneously generated at some volume concentrations. The 2920 cm⁻¹ band and the 3058 cm⁻¹ band are generated at one time, the SRS thresholds of the first-order Stokes of the 2920 cm⁻¹ and 3058 cm⁻¹ bands are lower compared with the second-order Stokes threshold of the 1002 cm⁻¹ band and the main peak of the 2920 cm⁻¹ and 3058 cm⁻¹ bands changes from the 2920 cm⁻¹ band to the 3058 cm⁻¹ band as the volume concentrations are changed. We assume that these phenomena are attributed to the intermolecular Fermi resonance. Raman scattering cross section (RSCS) theory is used to explain this assumption.     

Plasma-based nitrogen tail pulse shutter for CO2-TEA lidar dial systems

This paper presents the construction, use and characterisation of a laser-induced sealed plasma shutter to clip off the nitrogen pulse tail of a CO₂-TEA laser-based lidar dial system. Investigation of the optimum gas filling pressure, temporal profile of the clipped pulse, and the laser threshold power intensities to achieve ionisation growth and breakdown in helium, argon, and nitrogen are also presented. Values of these power density thresholds lie between 3×10¹¹ W cm^-2–5×10¹² W cm^-2, 2×10¹¹ W cm^-2–2×10¹² W cm^-2 and 3×10¹³ W cm^-2–2×10¹⁴ W cm^-2 for helium, argon, and nitrogen, respectively. The range resolution attainable with the present clipped pulses is 15 m, which is 30 times better than that readily obtained with the nitrogen-tailed pulses. Field measurements of the lidar returns with the clipped pulse from a co-operative target are presented. Received: 27 December 1999 / Revised version: 11 February 2000 / Published online: 27 April 2000     

Nd: YAG laser annealing of gallium-implanted silicon

A Q-switched Nd: YAG laser with a pulse duration of 20 ns was used to investigate effects of laser annealing in gallium implanted silicon. Rutherford backscattering and Hall-effect measurements were performed to evaluate the annealed layer. Differential Hall-effect measurements were carried out to obtain carrier concentration profiles after annealing. It was found that a maximum sheet carrier concentration of 8×10¹⁵ cm⁻² can be obtained for a gallium implantation of 10¹⁶ cm⁻² by laser annealing with an energy density of more than 1.0 J cm⁻². Although the peak carrier concentration was found to be 8.0×10²⁰ cm⁻³, the annealed layer showed polycrystalline structures even after annealing with an energy density up to 4J cm⁻². The annealing took place in the solid phase in this energy density range.     

Assessment of the possibility of determination of the electrophysical characteristics of CdxHg1–xTe p+–n-structures using differential hall measurements

The process of reconstuction of the distribution profile of hole concentration in the p ⁺–n structure by the method of differential Hall measurements upon implantation of ions As⁺ (Е = 190 keV, D = 3.10¹⁴ cm^-2, j = 0.025 μA/cm²) into epitaxial films Cd _x Hg_1–x Te for x ~ 0.2, with the initial electron concentration and mobility n = 10¹⁴ cm^-3 and μ = 2∙10⁵ cm²∙V^–1∙s^–1 is numerically simulated. The dependences of degree of reconstruction of the hole-concentration distribution profile on the depth of a shunting n-layer and magnitude of the magnetic field, at which the electrophysical parameters of the p ⁺–n structure are measured, are calculated. The dependence of the limiting magnetic field determining the magnetic-field range for measurements on the n-layer depth is found. It is shown that in calculations one should use the conduction values measured at the same magnetic fields as the Hall coefficients for determination of the holeconcentration distribution profile using the Petritz model.     

D.C. conductivity of transparent conductive ZnO:Al films in the temperature range 80–360 K

An experimental study of the temperature dependence of the d.c. conductivity σ as a function of temperature T in the range from 80–360 K on nanocrystalline ZnO:Al films (Al³⁺ 2%) of thickness 500 nm prepared on glass microscope slides by a dip — coating method is presented. The electrical conductivity σ, which at room temperature varied between 0.1 to 2.7 S/cm, increased almost linearly with T for all the samples. Measurements of the Hall coefficient at room temperature and in a magnetic field of 1.2 T, gave R_H=0.53 cm³C⁻¹, from which a carrier concentration of n=1.18×10¹⁹ cm⁻³ and a carrier mobility of μ=1.40 cm²/Vs were deduced. Paper presented at the Patras Conference on Solid State Ionics — Transport Properties, Patras, Greece, Sept. 14–18, 2004.     

Nonlinear Thomson scattering of an ultrashort laser pulse

The nonlinear scattering of an ultrashort laser pulse by free electrons is considered. The pulse is described in the “Mexican hat” wavelet basis. The equation of motion for a charged particle in the field of a plane electromagnetic wave has an exact solution allowing, together with the instant spectrum approximation, the calculation of the intensity of nonlinear Thomson scattering for a high-intensity laser pulse. The spectral distribution of scattered radiation for the entire pulse duration is found by integrating with respect to time. The maximum of the emission spectrum of a free electron calculated in 10¹⁹–10²¹ W/cm² fields lies in the UV spectral region between 3 and 12 eV. A part of the continuous spectrum achieves high photon energies. One percent of the scattered energy for the field intensity 10²⁰ W/cm² is concentrated in the range ħω > 2.7 × 10² eV, for a field intensity of 10²¹ W/cm² in the range ħΩ > 7.9 × 10² eV, and for an intensity of 10²² W/cm² in the range ħΩ > 2.45 × 10⁵ eV. These results allow us to estimate nonlinear scattering as a source of hard X-rays.     

Rapid and sensitive trace gas detection with continuous wave Optical Parametric Oscillator-based Wavelength Modulation Spectroscopy

A fiber-amplified Distributed Bragg Reflector diode laser is used to pump a continuous wave, singly resonant Optical Parametric Oscillator (OPO). The output radiation covers the 3–4 μm with ability of rapid (100 THz/s) and broad mode-hop-free tuning (5 cm⁻¹). Wavelength Modulation Spectroscopy is combined with the OPO to take optimal advantage of the spectral scan speed. The sensitivity of the system was determined as 0.8 ppbv (parts-per-billion by volume) for ethane (C₂H₆) for the absorption peak at 2996.9 cm⁻¹ recorded in 1.3 seconds, corresponding to a noise equivalent absorption sensitivity (NEAS) of 1.2×10⁻⁹ cm⁻¹/Hz^1/2. A comparison between results using the 1^st, 2^nd and 4^th harmonic derivative signal from wavelength modulation was performed. The broad continuous tunability was demonstrated by covering 35 cm⁻¹ while recording absorption features of ethane, methane and water.     

Measuring photoionization cross-sections of excited atomic states

A new method of photoionization cross-section measurement based on the observation of saturation in the ion yield as a function of radiation intensity has been proposed. The photoionization cross-sections for the 6²P_1/2 and 6²P_3/2 levels of Rb atoms of the fundamental and second harmonics of ruby laser radiation are measured, with a tunable pulsed dye laser used for excitation. The following values of cross-sections are obtained: (1.7±0.4)·10⁻¹⁷ cm² and (1.5±0.4)·10⁻¹⁷ cm² for the levels 6²P_3/2 and 6²P_1/2, respectively, ionized by radiation of v₂=14403 cm⁻¹, and (1.9±0.5)·10⁻¹⁷ cm² for the 6²P_3/2 level ionized by v₂=28806 cm⁻¹ radiation.     

Properties and structural state of the surface layer in a zirconium alloy modified by a pulsed electron beam and saturated by hydrogen

A pulsed action of an electron beam on a Zr-1% Nb zirconium alloy is studied. Alloy samples are irradiated by three 50-μs pulses at an energy density of 15–25 J/cm², a power of (3–6) × 10⁴ W/cm², a current density of 10–50 A/cm², and an electron energy of 18 keV. This method of processing is found to modify the surface layer of the alloy without changing the structure-phase state of its volume. This surface modification increases the hydrogen saturation resistance of the alloy.     

Interaction of muonium with oxygen on silica powder surfaces

Results of the first μSR studies using Merck FO Optipur silica powder, which contains paramagnetic impurities at the ppb level and has a surface area of 610±20 m²/g. are reported. Above 20 K, the transverse field muonium relaxation rate is roughly constant at 0.5 μs⁻¹. Upon the addition of oxygen at ppm levels, the relaxation rate increases linearly with O₂ concentration in the temperature range from 40–100 K yielding two-dimensional depolarization rate constants on the order of 10⁻⁴ cm² molecule⁻¹ s⁻¹. As the temperature is increased further, both oxygen and muonium desorb from the surface yielding a three-dimensional rate constants at 300 K of 3.1(3)×10–10⁻¹⁰ cm³ molecule⁻¹ s⁻¹, in agreement with the gas phase value. Longitudinal field measurements suggest that MuO₂ is formed and is able to spin exchange with other oxygen molecules.