Microstructural changes in amorphous Si/crystalline Al thin bilayer films upon annealing

Microstructural changes occurring in a sputter deposited Si (150 nm, amorphous)/Al (50 nm, crystalline); {111} fibre textured bilayer, upon annealing at 523 K for 60 min in a vacuum of 2.0×10^-4 Pa, were analyzed employing X-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, atomic force microscopy and focused-ion beam imaging. After the annealing the Al and Si sublayers had largely exchanged their locations in the bilayer; i.e. the Si layer was adjacent to the substrate after annealing. Simultaneously, the amorphous Si layer had crystallized into an aggregate of {111} oriented nanocrystals, with a crystallite size of about 15 nm. The Al layer, now adjacent to the surface, had formed a uniformly net-shaped layer in association with an increase of the surface roughness. Upon this rearrangement, the already initially present Al {111} fibre texture had become stronger, the Al crystallites had grown laterally and the macrostress in the Al layer had relaxed. An extensive analysis of thermodynamic driving forces for the transformation indicated that the largest gain in energy upon transformation is due to the crystallization of the amorphous Si. The only identifiable driving force for the layer exchange appears to be the release of elastic energy upon the rearrangement of the Si and Al phases in the layer. PACS 61.43.D; 61.72.C; 62.40; 65.70; 68.55.J; 68.60.BThis revised version was published online in September 2004. Due to technical problems the PDF of the previous version was incomplete.     

PEALD-deposited crystalline GaN films on Si(100) substrates with sharp interfaces

Polycrystalline gallium nitride(GaN) thin films were deposited on Si(100) substrates via plasma-enhanced atomic layer deposition(PEALD) under optimal deposition parameters. In this work, we focus on the research of the GaN/Si(100)interfacial properties. The x-ray reflectivity measurements show the clearly-resolved fringes for all the as-grown GaN films, which reveals a perfectly smooth interface between the GaN film and Si(100), and this feature of sharp interface is further confirmed by high resolution transmission electron microscopy(HRTEM). However, an amorphous interfacial layer(~ 2 nm) can be observed from the HRTEM images, and is determined to be mixture of Ga_xO_y and GaN by xray photoelectron spectroscopy. To investigate the effect of this interlayer on the GaN growth, an AlN buffer layer was employed for GaN deposition. No interlayer is observed between GaN and AlN, and GaN shows better crystallization and lower oxygen impurity during the initial growth stage than the GaN with an interlayer.     

Visible photoluminescence from Ge+-implanted SiO2 films thermally grown on crystalline Si

+ -implanted SiO₂ films is studied as a function of different fabricating conditions (implantation dose, annealing temperature and time). The SiO₂ films containing Ge nanocrystals exhibit two photoluminescence (PL) bands peaked at 600 nm and 780 nm. There are two excitation bands in the PL excitation (PLE) spectra. With variation in Ge nanocrystal size, the PL and PLE peak energies show no appreciable shift. The PL and PLE spectral analyses suggest that during the PL process, electron–hole pairs are generated by the E(l) and E(2) direct transitions inside Ge nanocrystals, which then radiatively recombine via luminescent centers in the matrix or at the interface between the nanocrystal/matrix. Received: 27 January 1998/Accepted: 18 March 1998     

Photoacoustic spectroscopy of thin SiO2 films grown on (100) crystalline Si substrates

Photoacoustic Spectroscopy (PAS) has been used to measure the thickness of thin SiO₂ films grown on (100) Si wafers. The data are in reasonable agreement with a simple theoretical model. It suggests that photoacoustic Spectroscopy is complementary to optical interferometry, in that it is capable of giving quantitative estimates of thin transparent films on opaque substrates of low reflectivity via the transmitted fraction of the optical energy incident on the sample. Both theoretical and experimental results indicate that PAS can be very useful in the measurement of thin films on substrates of low reflectivity.     

Stress-induced g-shift of diluted Er in Au thin films

The ESR of diluted Er in Au thin films of about 1.000 Å thick, epitaxially grown on NaCl (001) faces, has been measured. The observed anisotropy on the g value and linewidth of the Er resonance are interpreted in terms of strains on the film induced by the substrate. A lower limit for the second order orbit-lattice coupling parameter is estimated.     

Investigation on high mobility nanocrystalline Si with crystalline Si heterostructure

A heterostructure of n-type hydrogenated nanocrystalline silicon (nc-Si:H) film with p-type crystalline silicon, i.e., (n)nc-Si:H/(p)C-Si, was fabricated to investigate carrier characteristics and transport. After electrical experiments, carrier information, such as hole and electron as well as 2-dimension electronic gas in the studied system, was identified respectively. The forward current conduction was analyzed while the reverse current transport was distinguished as different mechanisms within the different range of negative applied voltage. The performed study also leads us to ascribe the main origin of short transient times on the produced structure to a tunneling mechanism.     

Measurement of the interfacial energy between amorphous Si and crystalline Si

The experimental data of crystallization of amorphous Si thin films on single crystal Si substrates and on inert substrates have been analysed by a kinetic model of phase transformation. On the basis of the analysis, the interfacial energy between amorphous Si and crystalline Si has been calculated to be about 0.30 eV/atom and the number of Si atoms in the critical nucleus to be about 110.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

Method for pulsed magnetron deposition of diamondlike films on large-area substrates

The circuit of the pulse power supply of a magnetron sputtering system and the circuit of a high voltage generator used to realize the process of pulsed magnetron deposition of diamondlike films on large-area substrates are described. Measurements of the parameters of the plasma produced on pulsed magnetron sputtering of graphite in the argon medium have been performed. The plasma density (10¹⁷–10¹⁸ cm⁻³) has been shown to be one or two orders of magnitude higher than that in the case of dc magnetron sputtering and approach the plasma density achievable on vacuum arc cathode sputtering and pulsed laser sputtering. Samples of diamondlike films on crystalline silicon, titanium, and stainless steel have been prepared and examined. It has been demonstrated that high voltage bias pulses applied to the substrate promote production of high-quality diamondlike films showing high adherence to the substrate. Institute of High Current Electronics, Siberian Branch of the Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 53–60, December, 1999.     

Integration of GaN thin films to SiO2–Si(100) substrates by laser lift-off and wafer fusion method

A process methodology has been adopted to bond GaN thin films to Si(100) substrates using the combination of laser lift-off and direct wafer fusion. Using optimum excimer laser conditions, 2–10 μm of GaN is lifted-off from sapphire. The lifted-off thin film is cleared from gallium residual and then suitably treated in a hydrofluoric, nitric and acetic acid mixture to render the surface hydrophilic. This treatment provides van der Waals bonds to immediately contact bond with SiO₂–Si(100) substrate at room temperature. The bonds are further strengthened by a high temperature annealing at 650 C for 2 h. The structural and mechanical characteristics of the bonded structure reveal uniform and high quality bonding. The optical characteristics of the transferred bonded film on SiO₂–Si(100) substrate exhibit similar properties to that of GaN on sapphire. In a similar manner, high-brightness blue LEDs were transferred from sapphire to SiO₂–Si(100) substrate with no deterioration in the electrical and optical performance of the device.     

Color centres in crystalline Lif films

Abstract

Policrystalline LiF thin films were produced on amorphous substrates at different temperatures. Preliminary optical measurements on F₂ and F₃ ⁺ aggregate color centres produced by electron irradiation were performed.     

Disclination motion in liquid crystalline films

We theoretically study a single disclination motion in a thin free-standing liquid crystalline film. Backflow effects and the own dynamics of the orientational degree of freedom (bond or director angle) are taken into account. We find the orientation field and the hydrodynamic velocity distribution around the moving disclination, which allows us to relate the disclination velocity to the angle gradient far from the disclination. Different cases are examined depending on the ratio of the rotational and shear viscosity coefficients.     

Preparation of large-area double-walled carbon nanotube films and application as film heater

Large-area (larger than 30×30 cm²) double-walled carbon nanotube (DWCNT) films are prepared and application as a heating element for film heaters is demonstrated. A high heating efficiency is observed. Measurements indicate that the use of the DWCNT film heater would save energy consumption up to 20–30% when compared with a commercial film-like metal-based heater. Morphological analysis reveals that the special surface structure, appropriate electric and high thermal conductivities of the film formed by the network of entangled nanotube bundles may lead to the high heating performance. Considering large-area, shape flexibility, negligible weight and easy manipulation, the film exhibits promising potential applications as a film heater for thermal control in aircrafts, medical equipment, home appliances and other industrial fields at low temperature (below 400 °C).     

Integration of GaN thin films with silicon substrates by fusion bonding and laser lift-off

GaN thin films grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off (LLO) technique. GaN/Al2O3 structures are joined to Si substrates by pressure bonding Ti/Au coated GaN surface onto Ti/Au coated Si receptor substrates at the temperature of 400 ℃. KrF excimer laser with 400-m J/cm2 energy density, 248-nm wavelength, and 30-ns pulse width is used to irradiate the wafer through the transparent sapphire substrates and separate GaN films from sapphire. Cross-section scanning electron microscopy (SEM) combined with energy dispersive X-ray spectrometer (EDS) measurements show that Au/Si solid solution is formed during bonding process. Atomic force microscopy (AFM) and photoluminescence (PL) measurements show that the qualities of GaN films on Si substrates degrade little after substrates transfer.     

The photoluminescence kinetics of oligothiophene-phenylenesilane crystalline films

Poly- and single crystalline films of 5,5??-bis(4-trimethylsilylbenzene-1-yl)-2,2??-bithiophene were grown for the first time and their photoluminescent properties were studied. Single crystalline films show exponential photoluminescence kinetics with a lifetime of 0.97 ns. Polycrystalline films demonstrate more complex photoluminescence kinetics. The relationship between the film structure and the photoluminescence kinetics is discussed.     

Some optical specificity of ultrathin crystalline films

The changes of optical properties under boundary presence in molecular crystal nanofilm were theoretically investigated in this work. The dispersion law and states of excitons as well as their space distribution along boundary direction have been determined using adjusted Green's function method and also by combined analytical and numerical calculations. On the basis of real and imaginary part of relative permittivity, both absorption and refraction indices were determined, and the influences of boundary parameters on occurrence of a very selective and strictly discrete absorption were analyzed.     

Rapid growth of ultra thin SiO2 films by a large-area electron beam

Rapid growth of ultra thin oxide films (40–180Å) of silicon using a low-energy large-area electron beam has been performed with a pressure ratio of 31 (O₂/He) and a total pressure of 0.5–0.7 Torr. A higher oxidation rate of about 625Ų/s is found for shorter irradiation time of the e-beam in the e-beam dose range 0.75–3 Coulomb/cm² and at lower substrate temperature 540–740°C. AES and XPS demonstrated a rapid electron-stimulated oxidation process of the Si surface. For the grown ultra thin oxide films, C-V characteristics, dielectric strength, uniformity of the film over the entire Si wafer and its thickness as a function of the processing time of the e-beam are also presented.     

Deposition of large-area, high-quality cubic boron nitride films by ECR-enhanced microwave-plasma CVD

Large-area, 1-μm-thick cubic boron nitride (cBN) films were deposited on (001) silicon substrates by electron-cyclotron-resonance-enhanced microwave-plasma chemical vapor deposition (ECR-MP CVD) in a mixture of He-Ar-N₂-BF₃-H₂ gases. With the assistance of fluorine chemistry in the gas phase and substrate reactions, the phase purity of the sp³-configuration was improved to over 85% at a reduced substrate bias voltage of -40 V. The grown films show clear Raman transversal optical (TO) and longitudinal optical (LO) phonon vibration modes, characteristic of cBN. Such Raman spectral characteristics are the first ever observed in cBN films prepared under ECR-MP CVD conditions. Received: 3 May 2002 / Accepted: 7 May 2002 / Published online: 22 November 2002 RID="*" ID="*"Corresponding author. Fax: +852-2788/7830, E-mail: apwjzh@cityu.edu.hk     

Preparation of single-crystal-like MgO films on Si and orientation control of platinum films on MgO/Si

Growth of a Pt/MgO bilayer on Si(100) was investigated by pulsed-laser deposition. The growth modes of both MgO and platinum films are layer-by-layer growth, which were revealed by in situ reflection high energy electron diffraction observations. Two kinds of orientations of platinum films, viz. epitaxially (100) and (111)-oriented platinum films, were obtained on the same MgO(100)/Si(100) substrate only by varying the laser fluence. The effect of laser fluence on the orientation of platinum films is briefly discussed. The platinum films prepared in our experiments are epitaxially grown and exhibit atomic-scale surface flatness. It is believed that the improvement in the quality of platinum films can be attributed to the perfectly single-crystalline quality of the MgO buffer layer, which was further confirmed by the excellent dielectric properties. For a 150 nm thick MgO film, the leakage current density was found to be 10^-7 Acm^-2 with an electric field of 8×10⁵ Vcm^-1 and the relative dielectric constant (_r) was 10.6. PACS 68.55.Jk; 81.15.Fg; 85.50.Gk     

Cathodoluminescence of large-area PLD grown ZnO thin films measured in transmission and reflection

Epitaxial ZnO thin films on sapphire substrates can be used as fast and laterally homogeneous scintillators to convert electrons into photons, for example for imaging purpose. We report on the improvement of the cathodoluminescence intensity of epitaxial pulsed laser deposited ZnO films on a-plane sapphire substrates with diameter up to 33 mm. The lateral homogeneity of the integral cathodoluminescence intensity was inspected using a modified RHEED setup. Cathodoluminescence spectra were excited at the ZnO side of the samples and detected both in reflection and in transmission geometry. The redshift of the excitonic cathodoluminescence peak in transmission relative to reflection and the peak shift with the excitation depth can be explained by a model based on self absorption of the photons in the ZnO film. PACS 78.60.Hk; 78.20.Bh; 81.05.Dz; 81.15.Fg     

Hydrogen in amorphous and crystalline ytterbium films

Ytterbium vapor condensation on a liquid-helium cooled substrate in a hydrogen atmosphere is used to obtain Yb-H films containing up to 55 at.% hydrogen. Various thermodynamic and kinetic parameters of the transition of these films from the amorphous to the crystalline state (a→c transition) are investigated along with the electrical conductivity of these states. It is shown that the investigated properties of Yb-H films containing up to 40 at.% hydrogen are essentially indistinguishable from those of pure Yb films in the temperature interval 4.2–293 K. Increasing the hydrogen concentration to 55 at.% leads to an insignificant increase in the electrical resistivity, the kinetic temperature, and the activation energy of the a→c transition, and also to a decrease of the propagation speed of self-maintaining avalanche (explosive) crystallization. Reasons for the observed influence of hydrogen on the properties of Yb-H films are analyzed. The examined low-temperature Yb-H condensates can be characterized as a “frozen” solid solution of hydrogen in ytterbium in the temperature interval 4.2–293 K. Storing such films at room temperature leads to the formation of ionic ytterbium dihydride YbH₂. Fiz. Tverd. Tela (St. Petersburg) 41, 177–182 (February 1999)