共查询到20条相似文献,搜索用时 15 毫秒
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高功率微波在受控热核聚变加热、微波高梯度加速器、高功率雷达、定向能武器、超级干扰机及冲击雷达等方面有着重要的应用.本文针对高功率微波输出窗内侧氩气放电击穿过程,建立了二次电子倍增和气体电离的一维空间分布、三维速度分布(1D3V)模型,并开发了相应的PIC/MC程序代码.研究了气压、微波频率、微波振幅对放电击穿的影响.结果表明:在真空情况下,介质窗放电击穿只存在二次电子倍增过程;在低气压和稍高气压时,二次电子倍增和气体电离共存;在极高气压时,气体电离占主导.给出了不同气压下电子、离子的密度和静电场的空间分布.此外还观察到,在500 mTorr时,随着微波振幅或微波频率的变化,气体电离出现的时刻和电离产生的等离子体峰值位置有较大差异,尤其是当微波频率(GHz)在数值上是微波振幅(MV/m)的2倍时,气体电离出现的较早. 相似文献
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基于渡越辐射机理结合径向结构的低阻抗特性,提出了一种新型的低阻抗高功率微波器件——径向三腔渡越时间振荡器,它由3个等间距的边耦合同轴腔组成,径向运动电子束与谐振腔中的角向均匀模式场相互作用。采用PIC粒子模拟程序进行了模拟研究。在电子束能量450 keV、束流60 kA且无外加引导磁场的条件下,当结构参数网长为4.8 cm,腔间距为1.4 cm,电子发射面为0.8 cm,内径为8 cm时,获得了平均功率7.4 GW,频率4.1 GHz的微波输出,效率达27.4%,阻抗7.5 Ω。通过粒子模拟给出了束波互作用效率随电子束电压、电流以及谐振腔间距的变化曲线,电子束电压对输出微波频率的影响曲线以及不同谐振频率与最佳谐振腔间距的对应曲线,这些曲线表明该器件具有渡越时间效应的基本特征,属于渡越辐射器件,且具有对电子束质量要求不高的特点。 相似文献
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采用理论分析和实验验证相结合的方法, 研究了0.14 THz过模表面波振荡器(过模比D/λ≈3)中太赫兹波模式成分的分布. 首先针对具有圆周对称结构的过模切连科夫器件, 建立了用于模式分析的纵向场分解法. 接着基于2.5维PIC(Particle-in-cell)软件的电场模拟结果, 采用该方法对0.14 THz表面波振荡器的模式进行了详尽的理论分析. 结果表明, 器件中不同结构区域的太赫兹波模式成分不同, 相互间存在模式转换, 输出模式以TM02和TM03模为主, 并伴有少量TM04模. 最后利用图像显示法获取了0.14 THz表面波振荡器的近场辐射能量分布, 与由模式分析结果得到的理论分布符合的较好, 证明了纵向场分解法用于模式分析的可行性和结果的正确性.
关键词:
过模
表面波振荡器
模式分析
场分解法 相似文献
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提出了一种新型的高功率虚阴极径向反射速调管振荡器,它结合了虚阴极振荡器容易起振和速调管微波产生效率较高的特点。利用虚阴极反射电子束对调制腔的正反馈,可以减小起振电流和起振时间,而且提高了微波产生效率。它是一种结构简单、紧凑的器件。用2.5维PIC程序对这种器件进行了数值模拟研究。得到的数值模拟结果表明,输入电压620 kV,电流25 kA,输出微波周期平均功率为2.5 GW。虚阴极振荡频率被锁定,频率为1.25 GHz。 相似文献
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利用体积加权宏粒子模型,考虑了阴极形状的爆炸电子发射模型、散度校正完全匹配层边界等新型和改进型电磁粒子模拟算法模型,提高了粒子模拟算法的计算精度,并有效降低数值噪声。在此基础上开发出2.5维全电磁通用粒子模拟软件——尤普,可在x-y,z-r和r-φ3种坐标系下应用于高功率微波器件的2.5维数值模拟研究和结构设计。对相对论磁控管、磁绝缘线振荡器和虚阴极振荡器等高功率微波器件的模拟结果表明:尤普软件得到了正确的物理图像和物理规律。 相似文献
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Hutchinson D.A.W. Turner M.M. Doyle R.A. Hopkins M.B. 《IEEE transactions on plasma science. IEEE Nuclear and Plasma Sciences Society》1995,23(4):636-643
A capacitively-coupled RF argon discharge at a pressure of 10 mTorr with a plate separation of 7.5 cm has been studied both experimentally and using a one-dimensional particle in cell simulation with Monte Carlo collisions. A magnetic field of 0 to 60 G is applied in the direction parallel to the capacitor plates. In the simulation it was found that as the magnetic field was increased such that the electron cyclotron orbit radius of the hot electrons became smaller than of the order of the discharge length, the electron heating in the bulk of the discharge increased. The dominant electron heating mechanism was observed to change from a stochastic sheath to a bulk ohmic electron heating mode, with a variation of field from a to 10 G. This was accompanied by a drop in the plasma density at small magnetic fields, which was also observed experimentally. At higher magnetic fields the plasma density was found to increase, A detailed discussion of the simulation results is presented drawing comparisons with the experimental results, with which there is good agreement, and a simple magnetohydrodynamic model for the bulk heating 相似文献
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Haochuan Li Jingtao Zhu Zhanshan Wang Hong Chen Yuzhu Wang Jie Wang 《Journal of synchrotron radiation》2014,21(1):97-103
An integration method is demonstrated for directly determining the average interface statistics of periodic multilayers from the X‐ray scattering diagram. By measuring the X‐ray scattering diagram in the out‐of‐plane geometry and integrating the scattered intensity along the vertical momentum transfer qz in an interval, which is decided by the thickness ratio Γ (ratio of sublayer's thickness to periodic thickness), the cross‐correlations between different interfaces are canceled and only the autocorrelations are reserved. Then the multilayer can be treated as a `single interface' and the average power spectral density can be obtained without assuming any vertical correlation model. This method has been employed to study the interface morphology of sputter‐deposited W/Si multilayers grown at an Ar pressure of 1–7 mTorr. The results show an increase in vertical correlation length and a decrease in lateral correlation length with increased Ar pressure. The static roughness exponent α = 0 and dynamic growth exponent z = 2 indicate the Edwards–Wilkinson growth model at an Ar pressure of 1–5 mTorr. At an Ar pressure of 7 mTorr, α = 0.35 and z = 1.65 indicate the Kardar–Parisi–Zhang growth model. 相似文献
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Hamid Entezar Mehdi Parisa Esmaili Mehdi Nasiri Sarvi Somayeh Asgary 《Optical and Quantum Electronics》2018,50(9):344
Silver oxide nano layers were prepared by RF magnetron sputtering on amorphous SiO2 substrates. O2 pressure in chamber was varied from 1 to 4 and 7 mTorr during growth process. The effects of different O2 pressure on structural, morphological and optical properties of the films were investigated by means of X-ray diffraction, scanning electron microscopy, atomic force microscopy and UV–Vis spectroscopy analyses. Optical reflectance measured in the wavelength of 350–950 nm by spectroscopy. Other optical properties and optical band gaps were calculated using Kramers–Kronig relations. The X-ray diffraction measurements showed change in crystalline structure with increasing O2 pressure. Preferred orientation has been changed to another growth orientation at 4 mTorr O2 pressure. The Atomic force microscope images showed increasing in roughness consistently by increasing oxygen pressure. The thickness of the thin films decreases (from 217 to 180 nm) with increasing O2 pressure. Optical results revealed that the highest optical band gap of 3.1 eV and the highest transmittance of?~?80% were achieved at lower O2 pressure (1 mTorr). 相似文献
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A terahertz (THz) Smith-Purcell (SP) backward-wave oscillator with an inverse wet-etched grating based on silicon has been proposed to enhance radiation intensity. This grating strengthens the interactions between an electron beam and the evanescent wave due to the adjacent surface structure between gratings that improves the magnitude of the electric field up to 1.7 times compared to the conventional rectangular gratings. A two-dimensional particle-in-cell (PIC) simulation shows that the radiated power is increased up to 2.3 times higher at the radiated frequency of 0.66 THz for an electron-beam energy of 30 keV. 相似文献
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B. Bakowski G. Hancock R. Peverall G.A.D. Ritchie 《Applied physics. B, Lasers and optics》2006,82(1):123-131
The absolute concentration and translational temperature of the 2p10 and 2p7 excited states of argon have been measured in an inductively coupled plasma chamber under a variety of operating conditions
using both calibrated diode laser frequency modulation spectroscopy and cavity enhanced absorption spectroscopy. Accurate
lineshape analysis of frequency modulation signals has been employed to extract the desired information, and is corroborated
by cavity enhanced measurements. Temperatures are found to vary linearly with pressure from ∼400 K at 20 mTorr (2.7 Pa) to
∼510 K at 90 mTorr (12 Pa) in a 200 W discharge while concentrations peak at 3.25×108 cm-3 at 30 mTorr (4 Pa) (also in a 200 W discharge). The uncertainty in the recovered temperature is 7%, dominated by uncertainties
in the calibration of the frequency scale.
PACS 42.62Fi; 52.70kz 相似文献
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设计了一个用于为L波段同轴相对论返波振荡器提供导引磁场的双线绕制、分段磁场线圈系统。根据粒子模拟中对磁场的要求和实验室已有的条件来确定磁场的各参数,通过数学软件Mathcad和全电磁粒子模拟程序Karat对设计出的轴向磁场位形进行验证。采用基于Hall效应的Tesla计对加工好的磁场线圈产生轴向磁场空间分布进行了测量,同时利用电子束轰击尼龙靶来考察电子束被导引的效果。利用绕制好的磁场线圈开展了初步实验研究,在二极管电压655kV,电子束流为10.4kA,导引磁场0.7T的条件下,输出微波峰值功率约为864MW,微波波形半高宽为23ns,功率转换效率约为12.7%,频率1.61GHz。 相似文献
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随着太赫兹技术的发展,高频率、大功率的太赫兹辐射源一直是国内外研究的热点。再生反馈振荡器作为一种新型太赫兹源器件,具有可行性高、功率大的优点。基于0.8 THz太赫兹波成像系统的需求,采用折叠波导慢波结构,对再生反馈振荡器进行设计与研究。首先对0.8 THz折叠波导慢波结构进行设计并使用CST微波工作室中的本征模求解器进行参数优化,再通过CST粒子工作室中的PIC仿真模块对整管进行热特性仿真,验证了方案的可行性,仿真结果显示,最终可产生60 mW的稳定输出信号。 相似文献
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Barroso J.J. Kostov K.G. Correa R.A. 《IEEE transactions on plasma science. IEEE Nuclear and Plasma Sciences Society》1999,27(2):384-390
A simulation study with experimental parameters of a 32-GHz gyrotron operating in the TE021 mode is presented. Beam electrons with typical energy of 40 keV and transverse-to-axial velocity ratio ranging from α=0.8 to α=2.0 are injected into the cavity to drive electromagnetic oscillations from noise. On the basis of an electromagnetic particle-in-cell (PIC) code, a parameterization study is carried out to determine the dependence of output power upon pitch ratio and beam current. A comparison of the PIC simulation results with the predictions of the fixed-field approximation on considering Gaussian and asymmetric profiles has indicated close agreement between field parameters and conversion efficiency corresponding to both approaches 相似文献
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论文对0.34 THz大功率过模表面波振荡器进行了模拟设计和初步实验研究. 针对高过模比(D/λ ≈ 6.8)慢波结构, 根据小信号理论选择了合适的慢波结构尺寸和电子束距壁距离, 实现了器件在表面波TM01模的π点附近谐振. 根据PIC模拟结果, 表面波振荡器可以实现频率和功率分别为0.34 THz和22.8 MW的太赫兹波输出. 采用微细电火花加工技术完成了不锈钢慢波结构的一体化精细加工, 并基于小型化脉冲功率驱动源搭建了实验装置. 初步的实验结果表明, 在电子束电压和电流分别约为420 kV和3.1 kA时, 0.34 THz大功率过模表面波振荡器输出脉冲的频率范围为0.319–0.349 THz, 辐射功率不小于250 kW, 脉宽约为2 ns. 最后分析讨论了实验输出功率与模拟结果相差较大的原因, 为表面波振荡器的性能改善奠定了基础. 相似文献
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M. Khodaei S.A. Seyyed Ebrahimi Yong Jun Park Seungwoo Song Hyun Myung Jang Junwoo Son 《Phase Transitions》2013,86(7):666-675
The effect of oxygen pressure during pulsed laser deposition of Pb(Zr0.52Ti0.48)O3 (PZT) thin films on CoFe2O4 nano-seed layered Pt(111)/Si substrate was investigated. The PZT film deposited at oxygen pressure lower than 25 mTorr is identified as both perovskite and pyrochlore phases and the films deposited at high oxygen pressure (50-100 mTorr) show the single-phase perovskite PZT that has a perfect (111)-orientation. In addition, the film deposited at PO2 of 50 mTorr has a uniform surface morphology, whereas the film deposited at PO2 of 100 mTorr has a non-uniform surface morphology and more incompacted columnar cross-section microstructure. The polarization of film deposited at 100 mTorr is higher than that deposited at 50 mTorr, but shift of the hysteresis loop along the electrical field axis in the film deposited at PO2 of 100 mTorr is larger than that of the film deposited at PO2 of 50 mTorr. 相似文献
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Yan M. Goedheer W.J. 《IEEE transactions on plasma science. IEEE Nuclear and Plasma Sciences Society》1999,27(5):1399-1405
In this paper we report on a study of SiH4/H2 radio-frequency discharges using the particle-in-cell/Monte Carlo (PIC/MC) method. A special procedure based on the rate balance for negative ions has been developed to speed up the simulation for this kind of electronegative discharge. The electron energy distribution function and the angular and energy distribution function of ions arriving at the substrate have been studied at different discharge settings (frequency, pressure, voltage, and power). The simulations show that the electrons are heated ohmically, so the average electron energy can be increased only by increasing the voltage. A high radical density, a high and more directional ion flux, and a low average ion energy can be obtained by a combination of a high frequency and a low RF voltage. The behavior of the dissociation rate with the discharge parameters is consistent with the experimentally observed consumption of SiH4. The simulated ion energy distribution functions are in good agreement with experimental results 相似文献