Tl-2212本征约瑟夫森结型负阻器件及负阻放大器

我们利用Tl-2212超导薄膜制作出了的本征约瑟夫森结型负阻器件.对于4 μm长3 μm宽的微桥型负阻器件,峰值电压为0.09V,峰值电流为1.44mA,谷值电压为0.75V,谷值电流为1.05mA,线性区间内负阻阻值约为-1400Ω.利用这种器件,制作了简单的负阻并联式电流放大器.实验证明它确实对信号具有电流放大作用,放大倍数可以通过改变负载电阻的大小来改变.     

npnp Ga1-xAlxAs负阻发光二极管研究成功

采用多层异质液相外延技术,制出了具有开关、存储、发光等多种功能的npnp Ga1～sAl2As负阻发光二极管。其典型参数为阈值电压Vth:5～50v,阈值电流Ith<1mA,保持电压Vk～1.8v,保持电流Ik<3mA,反向击穿电压Vk40～100v,反向漏电流。     

石墨烯电极弯折对2-苯基吡啶分子器件负微分电阻特性的调控和机理

采用非平衡格林函数结合密度泛函理论探讨了以锯齿型石墨烯纳米带为电极、2-苯基吡啶分子为中心区的分子器件电子输运性质.分析I-V特性及透射谱随偏压的变化表明,电极弯折能够调控器件负微分电阻特性,使器件峰值电压(V_p)减小、电流峰谷比(PVR)增大,当电极弯折角度为15°时,器件获得低峰值电压(0.1 V)、高电流峰谷比(12.84)的负阻特性.平衡态下器件的透射谱、态密度、散射态实空间分布图及投影态密度解释了器件负阻特性被调控源于电极弯折使器件中心分子与电极间的波函数交叠发生变化,导致两者间耦合减弱.弱耦合下外加偏压后,器件的透射系数因能级移动和偏压的变化而产生大幅波动,使器件在低偏置电压处即出现大的透射系数,产生峰值电流I_p,降低了器件的V_p,且增大了PVR值,其所获得的低V_p、高PVR的负阻特性在低功耗分子电子领域具有潜在的应用前景.     

一种白光有机电致发光器件的制备

通过对器件结构的优化设计，提高了白光电致发光器件中蓝光成分的发光效率，从而得到了一种较为理想的有机白光电致发光器件。驱动电压为5V时，电流密度J=0．5mA／cm^2，器件的效率达到最大，流明效率为1．92 lm／W，此时器件的发光亮度接近20cd／m^2。色坐标为(x=O．317，y=0．328)。非常接近白光等能点．是色度很好的白光。并且在很大范围内，色度随器件的驱动电压或电流变化不大，当驱动电压变化至15V时。f=232mA／cm^2，色坐标变化至(x=0．338，y=O．353)。在电压为22V时，器件的亮度达到最大，为17 000cd／m^2。此外器件结构相对简单。器件制备的可重复性得到很大程度的改善。     

单电子晶体管-金属氧化物半导体场效应晶体管多峰值负微分电阻器件

传统的共振隧穿二极管的多峰值负微分电阻器件的峰值数目受到限制，由单电子器件和传统的金属氧化物半导体场效应晶体管(MOSFET)器件组成的多峰值负微分电阻器件在原理上具有无穷多个峰值，并且MOSFET使单电子晶体管(SET)的峰值和谷值电流大小受其源漏电压的影响减小.利用这种多峰值负微分电阻器件实现了多值存储器，该存储器原理上是无穷多值的.并且利用它的折叠的I-V特性，实现了一个4位的Flash A/D转换器，与传统的Flash A/D转换器相比，SET-MOSFET的A/D转换器大大地简化了电路. 关键词： 库仑阻塞 库仑振荡 负微分电阻 多值存储器     

负阻发光元件

据报道,日本本好伸等人试制成的ZnSe(x)Te(1—x)—ZnSe(y)Te(1—y)异质结二极管,在光照射或电压触发下,可转变为具有负阻特性的发光器件。 这一元件的结构如图1所示:1是p型     

半导体负阻场致发光二极管

得到室温下具有负阻的场致发光二极管。是采用含有深受主能级锰作主要杂质的的砷化镓半导体作基底,因而是P型半导体。在砷化镓基底的表面上,再外延生长(例如气相外延)一层含有n型杂质(譬如碲)的砷化镓。当二极管加有适当电压时,这层n型区就提供称作少数载流子的电子注入高阻区。在远离掺碲区的砷化镓基底的另一个表面上,扩散锌作浅能级杂质,以获得锌占优势的掺杂区。扩散的结果是一边锌占优势,另外一边仍然锰占优势,中间形成高阻区。 室温 20℃或更低时,电压刚超过 1伏二极管呈现高阻。当达到临界击穿电压时,就出现电流随电压下降而上升的负阻。对于1伏量级的过电压,二极管电流由小变大的开关速度小于10毫微秒。     

基于高温超导本征约瑟夫森效应的新型两端恒流器件

我们利用高温超导本征约瑟夫森效应,研制了一种超导薄膜两端恒流器件.恒流器件是将生长在斜切20度LaAlO3基片上的Tl-2212超导薄膜光刻成微桥得到的.对于6μm×8μm的微桥器件,其最高工作电压可达15V以上,当两端电压在1V～11V之间变化时,电流基本稳定在4.3mA,误差不超过±5%,动态内阻大于104 Ω,在最佳工作位置(3V～8V)动态内阻可以达到105 Ω.通过数字模拟,对实际应用中两端恒流器件的rf调制进行了较详细的分析,并可使恒定电流上rf调制小于1%.     

条形叉指n阱和p衬底结的硅LED设计及分析

采用0.35μm双栅标准CMOS工艺最新设计和制备了叉指型SiLED发光器件。器件结构采用n阱和p衬底结,n阱为叉指结构,嵌入到p衬底中而结合成Sipn结LED。观察了SiLED发光显微图形及实际器件的版图,并在对器件进行了正、反向I-V特性测试、光功率及光谱特性的测量。SiLED的正向偏置时开启电压为0.9V,反向偏置时在15V左右可观察到发光。器件在室温下反向偏置时,10V,100mA电流下所得输出光功率为12.6nW,发光峰值在758nm处。     

具有高阈值电压和大栅压摆幅的常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管（英文）

介绍了一种具有高阈值电压和大栅压摆幅的常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管。采用原子层淀积(ALD)方法实现Al_2O_3栅介质的沉积。槽栅常关型AlGaN/GaN MOS-HEMT的栅长(Lg)为2μm,栅宽(Wg)为0.9 mm(0.45 mm×2),栅极和源极(Lgs)之间的距离为5μm,栅极和漏极(Lgd)之间的距离为10μm。在栅压为-20 V时,槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电仅为0.65 nA。在栅压为+12 V时,槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电为225 nA。器件的栅压摆幅为-20~+12V。在栅压V_(gs)=+10 V时,槽栅常关型AlGaN/GaN MOS-HEMT电流和饱和电流密度分别达到了98 mA和108 mA/mm(Wg=0.9 mm),特征导通电阻为4 mΩ·cm2。槽栅常关型AlGaN/GaN MOS-HEMT的阈值电压为+4.6 V,开启与关断电流比达到了5×108。当V_(ds)=7 V时,器件的峰值跨导为42 mS/mm(Wg=0.9 mm,V_(gs)=+10 V)。在V_(gs)=0 V时,栅漏间距为10μm的槽栅常关型AlGaN/GaN MOS-HEMT的关断击穿电压为450 V,关断泄露电流为0.025 mA/mm。     

Guided-Wave Two-Dimensional Acousto-Optic Scanner Using Proton-Exchanged Lithium Niobate Waveguide

Two-dimensional scanning of a 0.6328 mum guided-light beam has been realized using noncolinear acousto-optic (AO) coplanar Bragg diffraction together with colinear AO guided-mode to substrate radiation-mode conversion in a Z-cut Xpropagation LiNbO3 proton-exchanged (PE) waveguide. The two surface acoustic (SAW) waves utilized are at the center frequencies of 500 and 200 MHz, propagating in the Y and X axes, respectively. Two-dimensional scanning of approximately 720 resolvable light beam spots, namely, 18 40 (horizontal vertical) scanning, has been demonstrated using a light beam of 1.0 mm aperture. The total number of resolvable beam spots can be greatly increased from 720 by simply utilizing SAW transducers of larger bandwidth and a light beam of greater aperture. It should also be possible to significantly increase the diffraction efficiency from 3 % by optimizing the parameters of the PE waveguide and the SAWs.     

Effect ofγ-radiation on the spectral luminescence characteristics of impure cadmium tungstate crystals

Results of a study of the effect of γ-radiation on the spectral luminescence properties of cadmium tungstate crystals doped with silver, bismuth, and molybdenum cations are presented. Spectral characteristics of the nondnnnoped crystals are briefly described. Absorption and photo and X-ray luminescence spectra of the crystals taken before and after exposure to γ-radiation (5.5·10⁴ Gy) are compared. It is found that the spectral characteristics of the crystals doped with silver, bismuth, and molybdenum cations do not change markedly after the exposure. The relation between the type of impurity-induced defects, individual characteristics of the impurity cations, and the character of the effect of γ-radiation on the spectral luminescence properties of impure crystals is analyzed (preliminarily). Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 1, pp. 55–60, January–February, 1997.     

Femtosecond Transform-Limited Pulse Generation by Compensating for the Linear Chirp of SPM Spectra in Dispersion Shifted Fibers

A simple technique of pulse compression, based on the linear chirp compensation of self-phase modulation (SPM) spectra in dispersion shifted fibers, is demonstrated. The optimization procedure is carried out, for a short span of a single-mode fiber, using a parabolic law, which describes the behavior of the squared output pulse width versus the pump peak power in the case of Gaussian pulses. The experimental results give a minimum pulse duration of 233 fs, which is in good agreement with the model. Shorter and coherent pulses, down to 90 fs, have been obtained by inserting an interference filter at the optical output.     

Sorting of bending magnets for the SSRF booster

The Shanghai Synchrotron Radiation Facility(SSRF)booster ring,a full energy injector for the storage ring,is deigned to accelerate the electron beam energy from 150MeV to 3.5GeV that demands high extraction efficiency at the extraction energy with low beam loss rate when electrons are ramping.Closed orbit distortion(COD)caused by bending magnet field uniformity errors which affects the machine performance harmfully could be effectively reduced by bending magnet location sorting.Considering the affections of random errors in measurement,both ideal sorting and realistic sorting are studied based on measured bending magnet field uniformity errors and one reasonable combination of bending magnets which can reduce the horizontal COD by a factor of 5is given as the final installation sequence of the booster bending magnets in this paper.     

Measurement of nonlinear coefficient of optical fiber based on small chirped soliton transmission

We measure the waveform and phase curves of short optical pulses before and after transmission over different lengths of fibers by use of the pulse analyzer with the frequency-resolved optical gating (FROG),and numerically simulate pulse evolution under the experimental conditions.The nonlinear coefficient of the fiber is given by comparing the experimental results with the numerical ones.Difference between the experiment and numerical simulation is analyzed.     

Resonance scattering of canonical elastic shells in absorbing fluid medium

Resonance scattering of elastic spherical shell and cylindrical shell while the surrounding fluid medium has absorption is studied. The normal mode solution derived using exact elastic theory and the separation of variables is still applicable. However, the scattering form function has to be modified for the absorbing medium, otherwise the unreasonable result would be obtained. The backscattering form function in the absorbing medium is redefined, and the form function of elastic spherical and cylindrical shell with vacuum or solid matter filled is calculated in various absorption conditions. The results show that the absorption of surrounding fluid leads to notable attenuation of the coincidence resonances in the mid-frequency, but it has a little influence on the low-frequency resonance scattering induced by the filler inside the shell.     

Single-beam self-referenced phase-sensitive surface plasmon resonance sensor with high detection resolution

A versatile and low-cost single-beam self-referenced phase-sensitive surface plasmon resonance(SPR)sensing system with ultra-high resolution performance is presented.The system exhibits a root-mean-square phase fluctuation of ±0.0028.over a period of 45 min.i.e.a resolution of±5.2×10-9 refractive index units.The enhanced performance has been achieved through the incorporation of three design elements:a true single-beam configuration enabling complete self-referencing so that only the phase change associated with SPR gets detected,a differential measurement scheme to eliminate spurious signals not related to the sensor response,and the elimination of retardation drifts by incorporating temperature stabilization in the liquid crystal phase modulato .Our design should bring the detection sensitivity of non-labeling SPR biosensing closer to that achievable by conventional fluorescence-based techniques.     

Influences of SiO2 protective layers and annealing on the laser-induced damage threshold of Ta2O5 films

Ta2O5 films are prepared on BK7 substrates with conventional electron beam evaporation deposition.The effects of SiO2 protective layers and annealing on the laser-induced damage threshold (LIDT) of the films are investigated.The results show that SiO2 protective layers exert little influence on the electric field intensity(EFI)distribution,microstructure and microdefect density but increase the absorption slightly.Annealing iS effective on decreasing the microdefect density and the absorption of the films.Both SiO2 protective layers and annealing are beneficial to the damage resistance of the films and the latter is more effective to improve the LIDT.Moreover,the maximal LIDT of Ta2O5 films is achieved by the combination of SiO2 protective layers and annealing.     

A stereo matching algorithm using multi-peak candidate matches and geometric constraints

Gray cross correlation matching technique is adopted to extract candidate matches with gray cross correla- tion coefficients less than some certain range of maximal correlation coefficient called multi-peak candidate matches. Multi-peak candidates are extracted corresponding to three closest feature points at first. The corresponding multi-peak candidate matches are used to construct the model polygon. Correspondence is determined based on the local geometric relations between the three feature points and the multi-peak candidates. The disparity test and the global consistency checkout are applied to eliminate the remaining ambiguous matches that are not removed by the local geometric relational test. Experimental results show that the proposed algorithm is feasible and accurate.