Magnetoelectronic transport of the two-dimensional electron gas in CdSe single quantum wells

Hall mobility and magnetoresistance coefficient for the two-dimensional (2D) electron transport parallel to the heterojunction interfaces in a single quantum well of CdSe are calculated with a numerical iterative technique in the framework of Fermi-Dirac statistics. Lattice scatterings due to polar-mode longitudinal optic (LO) phonons, and acoustic phonons via deformation potential and piezoelectric couplings, are considered together with background and remote ionized impurity interactions. The parallel mode of piezoelectric scattering is found to contribute more than the perpendicular mode. We observe that the Hall mobility decreases with increasing temperature but increases with increasing channel width. The magnetoresistance coefficient is found to decrease with increasing temperature and increase with increasing magnetic field in the classical region.      

Transport properties of the two-dimensional electron gas in wide AlP quantum wells including temperature and correlation effects

We investigate the mobility, magnetoresistance and scattering time of a quasi-two-dimensional electron gas in a GaP/AlP/GaP quantum well of width L>L_c=45.7 Å at zero and finite temperatures. We consider the interface-roughness and impurity scattering, and study the dependence of the mobility, the resistance and scattering time ratio on the carrier density and quantum well width for different values of the impurity position and temperature using different approximations for the local-field correction. In the case of zero temperature and Hubbard local-field correction our results reduce to those of Gold and Marty (Phys. Rev. B. 76 (2007) 165309) [3]. We also study the correlation and multiple scattering effects on the total mobility and the critical density for a metal–insulator transition.     

Features of the fine structure of the fundamental absorption edge in low-doped semiconductor quantum wells with allowance for the Coulomb gap

Influence of the Coulomb gap on the fine structure of the fundamental absorption edge in quantum wells is studied. Using the interpolation formula, which adequately describes the effect of the Coulomb gap in quantum wells under conditions of low doping regardless of the compensation degree, an explicit expression is obtained for the absorption coefficient related to transitions from the valence level of size quantization to the impurity band. The dependence of the absorption coefficient of a quantum well on the levels of doping and compensation is also studied.     

Simultaneous effects of laser field and hydrostatic pressure on the intersubband transitions in square and parabolic quantum wells

The intersubband transitions in square and parabolic quantum wells under simultaneous action of the hydrostatic pressure and high-frequency laser field have been investigated. We found that the laser-induced blueshift effect on the subband energy levels may be tuned by the pressure action. Our calculations revealed that the oscillator strength of the transition between the ground and the first excited levels depends on the quantum well width and shape, laser field intensity and hydrostatic pressure. This combined effect of pressure and laser field offers a new degree of freedom in the optoelectronic devices applications.     

Controlling two-dimensional electron localization via phase-controlled absorption and gain in the three-coupled quantum wells

We investigate two-dimensional (2D) electron localization via phase-controlled absorption and gain of a weak probe field in an asymmetric semiconductor three-coupled quantum well (TCQW) with a closed loop under the action of two orthogonal standing-wave fields. It is found that we can achieve high-precision and high-resolution 2D electron localization via properly varying the parameters of the system. The influences of direct one-photon transition and indirect three-photon transition on the precision of probe absorption–gain spectra are also discussed in details. Thus, the proposed scheme shows the underlying probability for the formation of the 2D electron localization in a solid.     

On the two dimensional effective electron mass in quantum wells,inversion layers and NIPI superlattices of Kane type semiconductors in the presence of strong light waves: Simplified theory and relative comparison

An attempt is made to study the two dimensional (2D) effective electron mass (EEM) in quantum wells (Qws), inversion layers (ILs) and NIPI superlattices of Kane type semiconductors in the presence of strong external photoexcitation on the basis of a newly formulated electron dispersion laws within the framework of k.p. formalism. It has been found, taking InAs and InSb as examples, that the EEM in Qws, ILs and superlattices increases with increasing concentration, light intensity and wavelength of the incident light waves, respectively and the numerical magnitudes in each case is band structure dependent. The EEM in ILs is quantum number dependent exhibiting quantum jumps for specified values of the surface electric field and in NIPI superlattices; the same is the function of Fermi energy and the subband index characterizing such 2D structures. The appearance of the humps of the respective curves is due to the redistribution of the electrons among the quantized energy levels when the quantum numbers corresponding to the highest occupied level changes from one fixed value to the others. Although the EEM varies in various manners with all the variables as evident from all the curves, the rates of variations totally depend on the specific dispersion relation of the particular 2D structure. Under certain limiting conditions, all the results as derived in this paper get transformed into well known formulas of the EEM and the electron statistics in the absence of external photo-excitation and thus confirming the compatibility test. The results of this paper find three applications in the field of microstructures.     

Interband and intraband radiation from the n-InGaAs/GaAs heterostructures with quantum wells under the conditions of injection in high lateral electric fields

The interband and intraband radiation from the n-InGaAs/GaAs heterostructures with the double and triple tunnel coupled and selectively doped quantum wells (QWs), which is appeared under the lateral electric field and in the presence of hole injection from the anode contact, has been investigated. A steep increase of the interband radiation intensity was found at the fields of E≥1.7 kV/cm. This effect should be related to the big lifetime of the injected charge carriers (~10⁻⁶ s) which exceeds by three orders of magnitude the lifetime in the similar bulk direct-band semiconductor. Its reason lies in spatial separation of the injected holes and electrons between coupled wells, firstly, by the built-in transverse electric field between wells and, secondly, due to the real-space transfer of carriers heated by the lateral electric field from the wide well to the narrow δ-doped one. Furthermore, an increase of the carrier concentration due to injection leads to an increase of that transition intensity and, consequently, to an intensity increase of the radiative intersubband transitions of carriers in QWs which results in a steep intensity increase of the far (50–120 µm) infrared radiation.