Study on the solidification microstructure in AZ91D Mg alloy after laser surface melting

Laser surface melting (LSM) is known to enhance the wear and corrosion resistance of Mg alloys, but its effect on microstructural evolution of Mg alloys is not well understood. An effort has been made to study the effect of rapid solidification following LSM on the microstructural evolution of AZ91D Mg alloy. The results of X-ray diffractometry, scanning electron microscopy, transmission electron microscopy and energy-dispersive X-ray spectroscopy indicated that the solidification microstructure in the laser-melted zone was mainly cellular/dendrite structure of primarily α-Mg phase and continuous network of β-Mg₁₇Al₁₂ phase. Numerical prediction of the laser-melted zone suggested that cooling rates increased strongly from the bottom to the top surface in the irradiated regions. An attempt has been made to correlate dendrite cell sizes of the solidification microstructure with the cooling rates in the laser-treated AZ91D Mg alloy.     

Synthesis of TiN thin films by a new combined laser/sol-gel processing technique

In this work a novel method for synthesising TiN coatings is reported. A high-power diode laser at different powers and traverse speeds was applied to a mild steel substrate, coated with a slurry of titania sol-gel, urea and graphite. The reaction chemical thermodynamics was investigated to estimate the compositions, temperature range, and the required reaction enthalpy for producing TiN. A one-dimensional heat transfer model was used to optimise the processing parameters. Surface morphology and microstructure of the deposited coatings and substrate surface layers were examined using optical microscopy, scanning electron microscope, and field emission gun scanning electron microscope which reveals deposition of very thin layer about 0.3 μm of pure TiN and the presence of sub-micron crystalline structure of TiN forming a metal matrix composite inter-layer with the substrate below the film which suggest a good metallurgically bonding with the substrate. Chemical composition was determined by energy dispersive X-ray analysis. The phases were identified by X-ray diffraction which confirms the synthesis of TiN film for all the samples. Results of nano-hardness measurements revealed a hardness value of the order of 22-27 GPa.     

Metal nanoparticle production by pulsed laser nanostructuring of thin metal films

The controllable nanostructuring of thin metal films by nanosecond UV laser pulses is introduced as a novel technique for the production of metal nanoparticles supported on a range of different oxide substrates, including indium tin oxide. This processing is performed at low macroscopic temperatures. The physical mechanisms underlying the nanostructuring are discussed and applications for these nanoparticle films, including as catalysts for nanotube/nanowire growth and in surface enhanced Raman spectroscopy measurements, are introduced.     

Pulsed laser deposition process of PLZT thin films using an infrared Nd:YAG laser

Pulsed laser depositions of PLZT thin films were performed using an Nd:YAG (1064 nm) laser. The growths took place in vacuum or in an oxygen background. Room temperature and 500 °C were the used substrate temperatures. The X-ray diffraction analysis revealed a preferential crystallographic orientation in the films grown at room temperature in vacuum. Such result is discussed. The velocity distribution functions of the species in the plasma plume were obtained from a time of flight study using optical emission spectroscopy. The maximums of these distributions functions fall around 10⁶ cm/s, equivalent to an energy range of 18-344 eV. Ionic species of heavy elements (like lead) achieved higher velocities than other lighter species. This result is linked to the creation of an accelerating spatial charge and to the thermal nature of the target material extraction that allows some elements to be released first than others. Chemical state variations of the elements present in the films were analyzed. Under these different growing conditions, lead chemical states varied the most.     

Excimer laser ablation of thin titanium oxide films on glass

Thin titanium dioxide films are deposited on glass substrates by magnetron sputter deposition. They are irradiated in air, by means of a KrF excimer laser. The ablation rate is measured as a function of the laser fluence per pulse, F, and of the number of pulses, N. Above a fluence threshold, the films are partially ablated. The ablated thickness does not vary linearly with N. This is the signature of a negative feedback between the film thickness and the ablation rate. The origin of this negative feedback is shown to be due to either thermal or electronic effects, or both. At high F, the film detachs from the substrate.     

Improving wear resistance of pure copper by laser surface modification

With the aim of improving surface strength on copper with the electrical conductivity of the integral bulk retained, laser surface modification on copper was carried out using powder preplacement. The microstructures, hardness, wear resistance and electrical conductivity of the sample was investigated. It was shown that the modified layer of sample had crack-free, fine and homogeneous microstructures. Compared with pure copper, the average hardness of the sample was enhanced by a factor of six (about HV_0.1650), and the wear mass loss was reduced by 4/5, but the electrical conductivity of the integral bulk was only slightly decreased. The improvement of hardness and wear resistance could be attributed to the precipitation hardening of boride and carbide, grain refinement and solid solution strengthening in the layer.     

Epitaxial ZrC thin films grown by pulsed laser deposition

ZrC thin films were grown on (0 0 1)Si, (1 1 1)Si and (0 0 0 1)sapphire substrates by the pulsed laser deposition (PLD) technique. X-ray diffraction, X-ray reflectivity and Auger electron spectroscopy investigations were used to characterize the structure and composition of the deposited films. It has been found that films grown at temperatures higher than 700 °C under very low water vapor pressures were highly textured. Films deposited on (0 0 1)Si grew with the (0 0 1) axis perpendicular to the substrate, while those deposited on (1 1 1)Si and (0 0 0 1)sapphire grew with the (1 1 1) axis perpendicular to the substrate. Pole figures investigations showed that films were epitaxial, with in-plane axis aligned to those of the substrate.     

Pulsed laser deposition of semiconducting crystalline double-doped barium titanate thin films on nickel substrates

We synthesized by pulsed laser deposition (Ba,Sr,Y)TiO₃ and (Ba,Pb,Y)TiO₃ thin films on mechanically polished nickel substrates.The synthesized thin films were analyzed for: crystalline structure by X-ray diffractometry, morphology and surface topography by atomic force microscopy, optical and scanning electron microscopy, and elemental composition by energy dispersive X-ray spectroscopy and electrical properties by electrical measurements.We have shown that film properties were determined by the dopants, target composition, and deposition parameters (oxygen pressure, substrate temperature and incident laser fluence). All films exhibited a semiconducting behavior, as proved by the decrease of electrical resistance with heating temperature.     

Study of the structure and electrical properties of the copper nitride thin films deposited by pulsed laser deposition

Copper nitride thin films were prepared on glass and silicon substrates by ablating a copper target at different pressure of nitrogen. The films were characterized in situ by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and ex situ by X-ray diffraction (XRD). The nitrogen content in the samples, x = [N]/[Cu], changed between 0 and 0.33 for a corresponding variation in nitrogen pressure of 9 × 10⁻² to 1.3 × 10⁻¹ Torr. Using this methodology, it is possible to achieve sub-, over- and stoichiometric films by controlling the nitrogen pressure. The XPS results show that is possible to obtain copper nitride with x = 0.33 (Cu₃N) and x = 0.25 (Cu₄N) when the nitrogen pressure is 1.3 × 10⁻¹ and 5 × 10⁻² Torr, respectively. The lattice constants obtained from XRD results for copper nitride with x = 0.25 is of 3.850 Å and with x = 0.33 have values between 3.810 and 3.830 Å. The electrical properties of the films were studied as a function of the lattice constant. These results show that the electrical resistivity increases when the lattice parameter is decreasing. The electrical resistivity of copper nitride with x = 0.25 was smaller than samples with x = 0.33.     

Picosecond laser ablation of thin copper films

The ablation process of thin copper films on fused silica by picosecond laser pulses is investigated. The ablation area is characterized using optical and scanning electron microscopy. The single-shot ablation threshold fluence for 40 ps laser pulses at 1053 nm has been determinated toF _thres = 172 mJ/cm². The ablation rate per pulse is measured as a function of intensity in the range of 5 × 10⁹ to 2 × 10¹¹ W/cm² and changes from 80 to 250 nm with increasing intensity. The experimental ablation rate per pulse is compared to heat-flow calculations based on the two-temperature model for ultrafast laser heating. Possible applications of picosecond laser radiation for microstructuring of different materials are discussed.     

Depth profiling of copper thin films by resonant laser ablation

In Resonant Laser Ablation (RLA), material is related and selectively ionized by a low-energy pulse from a tunable laser. The selectivity and efficiency allow detection and quantitation at very low concentrations. We demonstrate that RLA has potential use in profiling thin layer and multilayer structures. Quantitative results are reported on the analysis of 20 and 100 Å copper thin films on Si(110) surfaces. Removal rates range from 10^–3 to 10^–2 Å/shot. Prospects for interrogation of dopants and impurities are also evaluated.     

Effect of stress in copper ferrite thin films

Cubic copper ferrite thin films, obtained by rf sputtering on quartz and subsequent post-annealing and quenching, show a large coercivity of about 300–600 Oe. Stress measurements using X-ray diffraction show high value of stress of about 400–1000 MPa. Both the stress and coercivity are found to increase with the decrease of the thickness of the films. There appears to be a contribution of the stress to the coercivity of the films, in the in-plane M–H loops.     

Chemical composition of ZrC thin films grown by pulsed laser deposition

ZrC films were grown on (1 0 0) Si substrates by the pulsed laser deposition (PLD) technique using a KrF excimer laser working at 40 Hz. The nominal substrate temperature during depositions was set at 300 °C and the cooling rate was 5 °C/min. X-ray diffraction investigations showed that films deposited under residual vacuum or under 2 × 10⁻³ Pa of CH₄ atmosphere were crystalline, exhibiting a (2 0 0)-axis texture, while those deposited under 2 × 10⁻² Pa of CH₄ atmosphere were found to be equiaxed and with smaller grain size. The surface elemental composition of as-deposited films, analyzed by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), showed the usual high oxygen contamination of carbides. Once the topmost 2-4 nm region was removed, the oxygen concentration rapidly decreased, down to around 3-8% only in bulk. Simulations of the X-ray reflectivity (XRR) curves indicated a smooth surface morphology, with roughness values below 1 nm (rms) and films density values of around 6.30-6.45 g/cm³, very close to the bulk density. The growth rate, estimated from thickness measurements by XRR was around 8.25 nm/min. Nanoindentation results showed for the best quality ZrC films a hardness of 27.6 GPa and a reduced modulus of 228 GPa.     

Excimer laser processing of ZnO thin films prepared by the sol-gel process

ZnO thin films were prepared on soda-lime glass from a single spin-coating deposition of a sol-gel prepared with anhydrous zinc acetate [Zn(C₂H₃O₂)₂], monoethanolamine [H₂NC₂H₄OH] and isopropanol. The deposited films were dried at 50 and 300 °C. X-ray analysis showed that the films were amorphous. Laser annealing was performed using an excimer laser. The laser pulse repetition rate was 25 Hz with a pulse energy of 5.9 mJ, giving a fluence of 225 mJ cm⁻² on the ZnO film. Typically, five laser pulses per unit area of the film were used. After laser processing, the hexagonal wurtzite phase of zinc oxide was observed from X-ray diffraction pattern analysis. The thin films had a transparency of greater than 70% in the visible region. The optical band-gap energy was 3.454 eV. Scanning electron microscopy and profilometry analysis highlighted the change in morphology that occurred as a result of laser processing. This comparative study shows that our sol-gel processing route differs significantly from ZnO sol-gel films prepared by conventional furnace annealing which requires temperatures above 450 °C for the formation of crystalline ZnO.     

Effect of laser treatment on the surface of copper alloys

The paper presents the results of laser cleaning of the archaeological metal objects using two time widths of pulsed laser radiation, which are around 150 μs and around 120 ns. Two archaeological objects made of copper alloys were studied: a bow and a ring. Both objects came from a cemetery which is located in the garden complex of Wilanow Palace in Warsaw and are dated from XII to XIII century. The bow and bronze ring had ornamental longitudinal grooving and were part of burial jewellery. The materials of which these artefacts were made of, as well as corrosion products on these objects, were studied by using a variety of analytical techniques. The phase composition of the corrosion layers was determined by using Raman spectroscopy. The surface topography as well as the chemical composition of the deposits and cleaned surfaces were investigated. The samples were examined using scanning electron microscopes equipped with EDS. The investigations included observations in SE and BSE modes and point analyses of the chemical composition by EDS.     

Study of thermal lensing effects in a copper vapor laser

The thermal lensing effect of the Copper Vapor Laser (CVL) was studied by considering both its windows and the active medium. The equivalent combined focal length of the active medium and windows was measured to be 52 mts under operating conditions for a 35W CVL. The variation of focal length with the operating parameters was studied.     

Nano-ionic thin films of gadolinia-doped ceria prepared by pulsed laser ablation

Microstructural properties of nano-ionic thin films of gadolinia-doped ceria (GDC) prepared by pulsed laser ablation from sintered targets of gadolinia (5–20 mol%) doped ceria are investigated. The ionic conductivity measurements of the sintered pellets showed a decrease in the activation energy from 1.1 to 0.65 eV for 5 and 30 mol% gadolinia-doped ceria, respectively. The microstructural properties of the GDC films as a function of substrate temperature, oxygen partial pressure, and laser energy show that the films are polycrystalline in the entire range of substrate temperature. The grain size is found to increase with increasing temperature up to 873 K. Further improved crystallinity is noticed for the films grown with oxygen partial pressure of 0.1–0.2 mbar. X-ray diffraction and transmission electron microscopy (TEM) reveal nanocrystalline grains with textured growth along <111> orientation in these films at low substrate temperature and at lower oxygen partial pressure. TEM study shows a uniform distribution of nanocrystal of 8–10 nm for energies ≤200 mJ/pulse, and nanocrystals embedded in a large crystalline matrix of doped ceria for energies in the range 400–600 mJ/pulse. Raman spectroscopy also confirms the defects in these films. The study also reveals that the substrate temperature and oxygen partial pressure could influence preferred orientation, while the laser energy could significantly influence defect concentration in these films. Invited paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006.     

The effect of hydrogen on copper nitride thin films deposited by magnetron sputtering

Copper nitride thin films were deposited on Si (1 0 0) wafers by reactive magnetron sputtering at various H₂/N₂ ratios. X-ray diffraction measurements show that the films are composed of Cu₃N crystallites with anti-ReO₃ structure and exhibit preferred orientation of [1 0 0] direction. Although the relative composition of the films has obviously changes with the H₂/N₂ ratios, the orientations of the films keep almost no changes. However, the grain size, lattice parameter and composition of the films are strongly dependent on the H₂/N₂ ratios. The copper nitride films prepared at 10% H₂/N₂ ratios show poor stability and large weight gain compared to the copper nitride films prepared at 0% H₂/N₂ ratios.     

Thermal behavior of thin metal films irradiated by shaped femtosecond pulse sequences laser

A numerical solution of the two-temperature model has been performed up to the shaped femtosecond pulse sequences heated metal target. The two-temperature model is used to analyze the shaped femtosecond pulse sequences with the following major conclusions. We confirm the distinctly different results on the different shaped femtosecond pulse sequences. As the number of shaped femtosecond pulses increases, the nonequilibrium state between electrons and phonons gradually disappears, the highest transient electron temperature is lowered and the thermolization time is prolonged, the electron heat conductivity remains higher because of the effect of incubation on the electron temperature, which preserves the advantages of ultrashort lasers. The shaped femtosecond pulse sequences can increase the efficiency in ablation and micromachining.     

Characterization of zirconium thin films deposited by pulsed laser deposition

Zirconium(Zr) thin films deposited on Si(100) by pulsed laser deposition(PLD) at different pulse repetition rates are investigated. The deposited Zr films exhibit a polycrystalline structure, and the X-ray diffraction(XRD) patterns of the films show the α Zr phase. Due to the morphology variation of the target and the laser–plasma interaction, the deposition rate significantly decreases from 0.0431 /pulse at 2 Hz to 0.0189 /pulse at 20 Hz. The presence of droplets on the surface of the deposited film, which is one of the main disadvantages of the PLD, is observed at various pulse repetition rates. Statistical results show that the dimension and the density of the droplets increase with an increasing pulse repetition rate. We find that the source of droplets is the liquid layer formed under the target surface. The dense nanoparticles covered on the film surface are observed through atomic force microscopy(AFM). The root mean square(RMS) roughness caused by valleys and islands on the film surface initially increases and then decreases with the increasing pulse repetition rate.The results of our investigation will be useful to optimize the synthesis conditions of the Zr films.