Crystallization characteristics of a middle CoFeB layer in a double MgO barrier magnetic tunnel junction

The crystallization characteristics of a middle CoFeB free layer in a magnetic tunnel junction (MTJ) with double MgO barriers were investigated by tunneling magnetoresistance (TMR) measurements of patterned cells across an 8-inch wafer. The MTJ structure was designed to have two CoFeB free layers and one bottom pinned layer, separated by MgO tunnel barriers. The observed resistance showed three types of TMR curves depending on the crystallization of the middle CoFeB layer. From the analysis of TMR curves, coherent crystallization of the middle CoFeB layer with the top and bottom MgO barriers was found to occur non-uniformly: About 80% of the MTJ cells in the wafer exhibited coherent crystallization of the middle CoFeB layers with the bottom MgO tunnel barrier, while others had coherent crystallization with the top MgO tunnel barrier or both barriers. This non-uniform crystallization of the middle CoFeB layer in a double MTJ was also clearly observed in tunneling electron microscopy images. Thus, control of the crystallization of the middle CoFeB layer is important for optimizing the MTJ with double MgO barriers, and especially for the fabrication of double barrier MTJ on a large area substrate.     

Tunneling magnetoresistance on the subnanometer scale

The influence of the finite thickness and structure, amorphous or crystalline, of Fe electrodes on the tunneling magnetoresistance (TMR) ratio is investigated by ab initio calculations in Fe/MgO/Fe tunnel junctions. An amorphous Fe layer in direct contact with the MgO barrier causes a low TMR ratio of only 44%. By inserting crystalline Fe monolayers between the barrier and the amorphous Fe the TMR ratio increases rapidly and reaches the same level as for semi-infinite Fe electrodes. Even one crystalline Fe monolayer is sufficient to achieve a giant TMR ratio exceeding 500%. Omitting the amorphous Fe has nearly no influence on the results if there are more than two monolayers of crystalline Fe next to the barrier. The results demonstrate that the reservoirs can even be nonmagnetic. The TMR emerges from the interplay of symmetry selection in the barrier and spin filtering at the electrode-barrier interface.     

Inelastic electron tunneling spectroscopy on ultrahigh vacuum prepared tunnel junctions

Inelastic electron tunneling (IET) spectra of clean ultrahigh vacuum (UHV) prepared (Al/Al oxide/Pb) tunnel junctions are discussed. Microcrystalline Al oxide is shown to grow on these Al films. This is in contrast to the formation of amorphous Al oxide in the common high vacuum (HV) preparation process. The IET-spectra of UHV prepared tunnel junctions are free of peaks due to contaminations. Conclusions concerning the growth of oxides on Al films are drawn.     

Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures

Because of the wide selectivity of ferromagnetic and ferroelectric (FE) components, electric-field (E-field) control of magnetism via strain mediation can be easily realized through composite multiferroic heterostructures. Here, an MgO-based magnetic tunnel junction (MTJ) is chosen rationally as the ferromagnetic constitution and a high-activity (001)-Pb(Mg$_{1/3}$Nb$_{2/3}$)$_{0.7}$Ti$_{0.3}$O$_{3}$ (PMN-0.3PT) single crystal is selected as the FE component to create a multiferroic MTJ/FE hybrid structure. The shape of tunneling magnetoresistance (TMR) versus in situ E-fields imprints the butterfly loop of the piezo-strain of the FE without magnetic-field bias. The E-field-controlled change in the TMR ratio is up to $-$0.27% without magnetic-field bias. Moreover, when a typical magnetic field ($\sim \pm 10$ Oe) is applied along the minor axis of the MTJ, the butterfly loop is changed significantly by the E-fields relative to that without magnetic-field bias. This suggests that the E-field-controlled junction resistance is spin-dependent and correlated with magnetization switching in the free layer of the MTJ. In addition, based on such a multiferroic heterostructure, a strain-gauge factor up to approximately 40 is achieved, which decreases further with a sign change from positive to negative with increasing magnetic fields. This multiferroic hybrid structure is a promising avenue to control TMR through E-fields in low-power-consumption spintronic and straintronic devices at room temperature.     

钴原子及其团簇在Rh(111)和Pd(111)表面的扫描隧道显微学研究

利用扫描隧道显微镜和扫描隧道谱(STM/STS)及单原子操纵,系统研究了单个钴原子(Co) 及其团簇在Rh (111)和Pd (111)两种表面的吸附和自旋电子输运性质. 发现单个Co原子在Rh (111)上有两种不同的稳定吸附位,分别对应于hcp和fcc空位, 他们的高度明显不同,在针尖的操纵下单个Co原子可以在两种吸附位之间相互转化. 在这两种吸附位的单个Co原子的STS谱的费米面附近都存在很显著的峰形结构, 经分析认为Rh (111)表面单个Co原子处于混价区,因此这一峰结构是d轨道共振 和近藤共振共同作用的结果.对于Rh (111)表面上的Co原子二聚体和三聚体, 其费米面附近没有观测到显著的峰,这可能是由于原子间磁交换相互作用 和原子间轨道杂化引起的体系态密度改变所共同导致.与Rh (111)表面不同, 在Pd (111)表面吸附的单个Co原子则表现出均一的高度.并且对于Pd (111)表面所有 单个Co原子及其二聚体和三聚体,在其STS谱的费米面附近均未探测到显著的电子结构, 表明Co原子吸附于Pd (111)表面具有与Rh (111)表面上不同的原子-衬底相互作用与自旋电子输运性质.     

Raman spectra and XPS studies of phase changes in Ge2Sb2Te5 films

Ge_2Sb_2Te_5 film was deposited by RF magnetron sputtering on Si (100) substrate. The structure of amorphous and crystalline Ge_2Sb_2Te_5 thin films was investigated using XRD, Raman spectra and XPS. XRD measurements revealed the existence of two different crystalline phases, which has a FCC structure and a hexagonal structure, respectively. The broad peak in the Raman spectra of amorphous Ge_2Sb_2Te_5 film is due to the amorphous －Te－-Te－ stretching. As the annealing temperature increases, the broad peak separates into two peaks, which indicates that the heteropolar bond in GeTe_4 and the Sb－Sb bond are connected with four Te atoms, and other units such as (TeSb) Sb－Sb (Te_2) and (Sb_2) Sb－Sb (Te_2), where some of the four Te atoms in the above formula are replaced by Sb atoms, remain in crystalline Ge_2Sb_2Te_5 thin film. And from the results of Raman spectra and XPS, higher the annealing temperature, more Te atoms bond to Ge atoms and more Sb atoms substitute Te in (Te_2) Sb－Sb (Te_2).     

Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR–V curves, output voltages and I–V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR–V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series.     

Metal-Oxide Interfaces in Magnetic Tunnel Junctions

Metal-oxide interfaces play an important role in spintronics—a new area of microelectronics that exploits spin of electrons in addition to the traditional charge degree of freedom to enhance the performance of existing semiconductor devices. Magnetic tunnel junctions (MTJs) consisting of spin-polarized ferromagnetic electrodes sandwiching an insulating barrier are such promising candidates of spintronic devices. The paper reviews recent results of first-principle density-functional studies of the atomic and electronic structure of metal-oxide interfaces in Co/Al₂O₃/Co and Co/SrTiO₃/Co MTJs. The most stable interface structures, O-terminated for fcc Co (111)/-alumina(0001) and TiO₂-terminated with oxygens on top of Co atoms for fcc Co (001)/SrTiO₃(001) were identified based on energetics of metal-oxide cohesion at the interface. The covalent character of bonding for both the Co/alumina and Co/SrTiO₃ interface structures has been determined based on the pattern of electron distribution across the interface. The Al-terminated Co/alumina interface that corresponds to an under-oxidized MTJ exhibits a metallic character of bonding. The unusual charge transfer process coupled with exchange interactions of electrons in Co results in quenching of surface magnetism at the interface and substantial reduction of work of separation. The electronic structure of the O-terminated Co/Al₂O₃/Co MTJ exhibits negative spin polarization at the Fermi energy within the first few monolayers of alumina but it eventually becomes positive for distances beyond 10 Å. The Co/SrTiO₃/Co MTJ shows an exchange coupling between the interface Co and Ti atoms mediated by oxygen, which results in an antiparallely aligned induced magnetic moment on Ti atoms. This may lead to a negative spin polarization of tunneling across the SrTiO₃ barrier from the Co electrode. The results illustrate the important fact that spin-polarized tunneling in magnetic tunnel junctions is not determined entirely by bulk density of states of ferromagnet electrodes, but is also very sensitive to the nature of the insulating tunneling barrier, as well as the atomic structure and bonding at the ferromagnet/insulator interface.     

Symmetry selection rules for vibrationally inelastic tunneling

A combined experimental and theoretical study is presented for the C-D stretch mode excitation of acetylene isotopes, C2HD and C2D2, on Cu(100) via inelastic electron tunneling (IET) in a scanning tunneling microscope junction. The calculated IET images using density functional theory show that the measured signal from C2D2 derives from the antisymmetric stretch mode. Selection rules are derived and involve the constraint imposed by the IET image on the symmetry characters of the vibrational mode and the adsorbate-induced electron states at the Fermi level.     

Barrier height and negative tunnel magnetoresistance

Based on the free-electron approximation method proposed by Slonczewski, we substitute the finite magnetic zone by a semi-infinite magnet. On this basis, the relationship between the tunnel magnetoresistance (TMR) and the barrier height of magnetic tunnel junction (MTJ) is studied. We find the TMR at small bias is always positive for various barrier heights when the MTJ has a symmetric configuration and the negative TMR can be observed when MTJ is with lower barrier height in the asymmetric condition.     

Thermal conductivity and specific heat of thin-film amorphous silicon

We report the thermal conductivity and specific heat of amorphous silicon thin films measured from 5-300 K using silicon-nitride membrane-based microcalorimeters. Above 50 K the thermal conductivity of thin-film amorphous silicon agrees with values previously reported by other authors. However, our data show no plateau, with a low T suppression of the thermal conductivity that suggests that the scattering of long wavelength, low Q vibrations goes as Q2. The specific heat shows Debye-like behavior below 15 K, with theta(D) = 487 +/- 5 K, and is consistent with a very small contribution of tunneling states in amorphous silicon. Above 15 K, the specific heat deviates less from Debye behavior than does its crystalline allotrope, indicating no significant excess modes (boson peak) in amorphous silicon.     

N/I/d波超导体c轴隧道结的微分电导

以方势垒描述绝缘层,对N/I/d波超导体c轴隧道结的微分电导进行了研究.结果表明:在N/I/d波超导体c轴隧道结的隧道谱中存在V型结构、能隙外的凹陷和小的零偏压电导峰.这一结果能很好的解释相关的实验现象.     

Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction

Using the density functional theory and the nonequilibrium Green's function method, we studied the finite-bias quantum transport in a Cr/graphene/Cr magnetotunnel junction(MTJ) constructed by a single graphene layer sandwiched between two semi-infinite Cr(111) electrodes. We found that the tunneling magnetoresistance(TMR) ratio in this MTJ reached108%, which is close to that of a perfect spin filter. Under an external positive bias, we found that the TMR ratio remained constant at 65%, in contrast to Mg O-based MTJs, the TMR ratios of which decrease with increasing bias. These results indicate that the Cr/graphene/Cr MTJ is a promising candidate for spintronics applications.     

Level width of a quasibound state in a double-barrier parabolic-well resonant tunneling structure

Taking exact Airy functions and Hermitian functions as envelope functions, we investigate in detail the level width of a quasibound state for electrons coherent resonant tunneling through symmetric and asymmetric double-barrier parabolic-well resonant tunneling structures (DBRT) with the transfer-matrix formalism. It is found that for the symmetric structure and the asymmetric structure with left barrier thicker than the right one, both the level width and the peak value vary monotonously with increasing applied bias, but for the asymmetric DBRT structure with left barrier thinner than the right one, they change nonmonotonously. The nonmonotonous variations of the level width and the peak value reflect the transition of tunneling type (i.e. first from incompletely resonant tunneling to completely resonant tunneling, and then from completely resonant tunneling back to incompletely resonant tunneling). The effects of well width, barrier thickness and barrier height on the level width and the peak value are also inspected.     

Andreev and single-particle tunneling spectra of underdoped cuprate superconductors

We study tunneling spectroscopy between a normal metal and an underdoped cuprate superconductor modeled by a phenomenological theory in which the pseudogap is a precursor to the undoped Mott insulator. In the low barrier tunneling limit, the spectra are enhanced by Andreev reflection only within a voltage region of the small superconducting energy gap. In the high barrier tunneling limit, the spectra show a large energy pseudogap associated with single particle tunneling. Our theory semiquantitatively describes the two gap behavior observed in tunneling experiments.     

Annealing Effect on Chain Segment Motion and Charge Trapping and Detrapping in Nylon 1010

The chain segment motion and charge trapping and detrapping in nylon 1010 films were investigated by means of thermally stimulated depolarization current (TSDC). There were three current peaks (named α, ρ1, and ρ2 peaks, respectively) in the experimental TSDC spectra above room temperature. The α peak is attributed to a background dipole relaxation by the motion of chain segments and space charge contribution, the ρ1 peak is originated from a space charge trapped in the bulk amorphous regions and the interphase between crystalline and amorphous regions, the ρ2 peak is originated from space charge trapped in crystalline regions. By analyzing the characteristic parameters of these peaks, it was found that with in increase of the degree of crystallinity the activation energy of the a peak increased from 1.12 to 1.22 eV and the trap depth of the ρ2 peak increased from 2.70 to 2.82 eV, while the trap depth of the ρ1 peak decreased from 1.50 to 1.29 eV. Annealing induced a decrease of the chain segment mobility and promoted the creation of traps in nylon 1010. Annealing also decreased the stability of the trapped charges in the bulk amorphous and the interphase regions and increased the stability of the trapped charges in the crystalline regions.     

Fe/Al2O3/Fe隧道结特性分析

用离子束溅射方法制备磁性隧道结(MTJ). 研究MTJ样品的隧道结磁电阻(TMR)效应.用X射线 光电子能谱分析了MTJ的软、硬磁层和非磁层及其界面的化学组成与微结构.研究了MTJ的微 结构对氧化铝势垒高度与有效宽度和TMR效应的影响. 关键词： 磁性隧道结 X射线光电子能谱 隧道结磁电阻     

Effect of Polarization Temperature on the Chain Segment Motion and Space Charge Detrapping in Polyamide 610 Film Electrets

The effect of polarization temperature on the chain segment motion and charge trapping and detrapping in polyamide 610 films has been investigated by means of thermally stimulated depolarization current (TSDC) and wide-angle X-ray diffraction (WAXD). A small part of the amorphous phase of quenched polyamide 610 changes into the crystalline state with increasing polarization temperature. There are three current peaks (named α, ρ₁, and ρ₂ peak, respectively) in the TSDC spectra. The α peak corresponds to the glass transition, the ρ ₁ peak is attributed to space charge trapped in the amorphous phase, and interphase between crystalline and amorphous phases, and the ρ ₂ peak originates from space charge trapped in the crystalline phase. By analyzing the characteristic parameters of these peaks, it was found that the increase of polarization temperature induced a decrease of the chain segment mobility and promoted the creation of structural traps in polyamide 610. The decrease of the chain segment mobility in the amorphous phase made the intensity of the α peak weak and the activation energy increased. The higher the polarization temperature, the higher the degree of crystallinity and the more charge carriers trapped in the crystalline phase. So, the increase of polarization temperature made the intensity of the ρ ₂ peak strong and increased the stability of trapped charge in the crystalline phase. The increase of polarization temperature also made the intensity of the ρ ₁ peak strong and decreased the stability of trapped charge in the amorphous phase and interphase.     

Solid-state NMR studies of the crystalline and amorphous domains within PEO and PEO: LiTf systems

Solid polymer electrolytes (SPEs) contain amorphous and crystalline regions, each of which have unique contributions to the ¹³C NMR spectrum. Understanding and assigning the ¹³C NMR signals are vital to interpreting the NMR data collected for each phase. The ¹³C CPMAS solid-state NMR spectrum of poly(ethylene oxide), a common polymer electrolyte host material, has superimposed broad and narrow components. Previously, the narrow component has been assigned to the amorphous region and the broad component to the crystalline PEO fraction. These assignments for pure PEO have been applied to various PEO:salt systems. Using lithium triflate salt dissolved in PEO, we revisit the spectral assignments and discover that the narrow component is due to crystalline PEO:LiTf component, which is reversed from the previous pure PEO assignment. This paradigm shift is based on data collected from a 100% crystalline PEO:LiTf with a 3:1 oxygen:lithium ratio sample, which exhibited only the narrow peak. For dilute electrolytes, such as 20:1 PEO:LiTf, the ¹³C CPMAS spectra contain the narrow peak superimposed on a broad peak as seen with pure PEO. As dilute electrolytes are heterogeneous with crystalline and amorphous regions of both pure PEO and PEO:LiTf complex, peak assignments for pure PEO and PEO:LiTf are important. Thus, we reexamine the previous assignment for pure PEO using samples of pure powdered PEO, thermally treated pure powdered PEO, and a thin film PEO cast from an acetonitrile solution. With these different samples, we observed the growth of the narrow peak under conditions that favor crystallization. Therefore, for pure PEO, we have reassigned the narrow peak to the crystalline region and the broad peak to the amorphous region. In light of our observations, previous NMR studies of pure PEO and PEO SPEs should be reinvestigated. We also use rotational echo double resonance (REDOR) to study the 20:1 PEO:LiTf created from 2 and 100 kDa PEO. We find that the lithium environment is similar in the respective microcrystalline domains. However, the 100 kDa samples have a larger fraction of pure crystalline PEO.     

Chemical states of GeTe thin-film during structural phase-change by annealing in ultra-high vacuum

The chemical states of GeTe thin film are investigated using high-resolution X-ray photoelectron spectroscopy (HRXPS) with synchrotron radiation, during amorphous to crystalline structural phase transition. As the temperature increases from 250 to 400 °C, we observe the rock-salt crystalline structure and phase with X-ray diffraction (XRD) and transmission electron microscopy (TEM). Spin-orbit splitting of the Ge 3d core-level spectrum clearly appears after annealing at 400 °C for 5 min. However, the binding energy of the Ge 3d_5/2 core-level peak of 29.8 eV does not change in the amorphous to crystalline structural phase transition. In the case of the Te 4d core-level, change in binding energy and peak shapes is also negligible. We assume that the Te atom is fixed at a site between the amorphous and crystalline phases. Although the structural environment of the Ge atoms changes during the structural phase transition, the chemical environment does not.