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1.
采用x射线粉末衍射方法测量了不同温度下R(Fe,Mo)12化合物(R=Nd,Y,D y)的晶格常数,对沿不同轴向的热膨胀反常程度进行了计算.分析认为R(Fe,Mo)12化合物热膨胀反常主要取决于Fe-Fe相互作用,根据Nd(Fe,Mo)12的结构参 数,不仅较短的Fe-Fe键负相互作用对热膨胀反常有贡献,8j-8j等较强的Fe-Fe正相互作用 也有很大贡献.另外还讨论了第三元素Mo的替代作用影响热膨胀反常的机理.
关键词:
x射线衍射
R(Fe
12化合物')" href="#">Mo)12化合物
热膨胀反常 相似文献
2.
The newly developed full-potential linearized augmented plane wave (LAPW) and local orbitals (lo) based on standard APW methods
are briefly introduced, and the structure and magnetic properties of R(Fe, Si)12 compounds (R = Y, Nd) are calculated using the method. The distribution of Si at different sites is analyzed based on total energy of
one crystal unit with structure having been optimized. The characters of magnetic moments, total density of states (TDOS)
and partial density of states (PDOS) for different crystal sites Si occupies are obtained and analyzed. The results show that
the total magnetic moments of RFe10Si2 (R = Y, Nd) are larger than those of RFe10
M
2 (M = Ti, V, Cr, Mn, Mo and W) and the hybridization mechanism is seen as follows. Si(8j) reduce the magnetic moments of Fe at
three sites, however, Si(8f) mainly reduce the magnetic moments of Fe(8i) and Fe(8j) atoms. The Curie temperature is markedly
enhanced by the introduction of Si atoms according to spin fluctuation of DOS at Fermi level. 相似文献
3.
X-ray powder diffraction,resistivity and magnetization studies have been performed on polycrystalline Nd(FexMn1-x)2Si2 (0 ≤ x ≤ 1) compounds which crystallize in a ThCr2Si2-type structure with the space group I4/mmm.The field-cooled temperature dependence of the magnetization curves shows that,at low temperatures,NdFe2Si2 is antiferromagnetic,while the other compounds show ferromagnetic behaviour.The substitution of Fe for Mn leads to a decrease in lattice parameters a,c and unit-cell volume V .The Curie temperature of the compounds first increases,reaches a maximum around x = 0.7,then decreases with Fe content.However,the saturation magnetization decreases monotonically with increasing Fe content.This Fe concentration dependent magnetization of Nd(FexMn1-x)2Si2 compounds can be well explained by taking into account the complex effect on magnetic properties due to the substitution of Mn by Fe.The temperature’s square dependence on electrical resistivity indicates that the curve of Nd(Fe0.6Mn0.4)2Si2 has a quasi-linear character above its Curie temperature,which is typical of simple metals. 相似文献
4.
采用溅射方法成功地制备了CaCu33Ti44O1212薄膜, 用原子力显微镜、x射线衍射(XRD)仪和LCR分析仪对样品进行形貌、物相结构和介电性质的研究.XRD表明,薄膜比块体的晶 格常数小但晶格畸变较大;LCR测量结果显示,在相同温度下薄膜比块体的相对介电常数低 ,薄膜相对介电常数由低到高转变时对应的温度较高且激活能较大.分析表明:薄膜的相对 介电常数较低是样品中晶相含量较低、缺陷较多使内部阻挡层电容大量减小、致密度不高引 起的;薄膜中
关键词:
磁控溅射
3Ti44O1212')" href="#">CaCu33Ti44O1212
介电常 数
激活能 相似文献
5.
采用固相烧结工艺,制备了不同La掺杂量(x=0.00,0.25,0.50,0.75,1.00,1.25和1.50) 的(Bi, La)4Ti3O12-Sr(Bi, La)4Ti4O15 (SrBi8-xLaxT i7O27)共生结构铁电陶瓷样品.用x射线衍射对其进行微结构分析 ,并测量铁
关键词:
4Ti3O12-SrBi4Ti4 O15')" href="#">Bi4Ti3O12-SrBi4Ti4O15
La掺杂
铁电性能
居里温度
弛豫铁电 相似文献
6.
利用x射线衍射和磁测量研究了不同稳定元素Co以及Ti,V和Cr替代对Nd3Fe29-x-yCoxMy(M=Ti,V,Cr)化合物结构和磁性的影响.研究发现:每一个稳定元素都有一替代量极限,在此极限以内所有化合物均为Nd3(Fe,Ti)29型结构,A2/m空间群.不同稳定元素的溶解极限不同.Co的替代量与稳定元素有关,当以Cr作为稳定元素时,Cr的替代量随着Co含量的提高而提高
关键词:
3(Fe')" href="#">Nd3(Fe
Co
29')" href="#">M)29
结构
磁性 相似文献
7.
Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se2 solar cell can reach a conversion efficiency of 13.15%. 相似文献
8.
9.
A comparative study of Nd:GdVO4 and Nd:YVO4 crystal lasers pumped by a fiber-coupled diode array has been conducted at the 4F3/2-4I9/2 transitions wavelengths of 912 nm and 914 nm, as well as when intracavity frequency-doubled to 456 nm and 457 nm, respectively. At the fundamental wavelength of 912 nm and second harmonic wavelength of 456 nm, maximum output powers from the Nd:GdVO4 crystal laser were 7.85 W and 4.6 W at a pump power of 29 W. All the results obtained from Nd:GdVO4 were superior to those of Nd:YVO4, indicating that Nd:GdVO4 is a more efficient laser crystal than Nd:YVO4 for laser operation on the 4F3/2-4I9/2 transitions. 相似文献
10.
J.G. GarzaS. Shaji A.C. RodriguezT.K. Das Roy B. Krishnan 《Applied Surface Science》2011,257(24):10834-10838
Silver antimony selenide (AgSbSe2) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb2S3), silver selenide (Ag2Se), selenium (Se) and silver (Ag). Sb2S3 thin film was prepared from a chemical bath containing SbCl3 and Na2S2O3, Ag2Se from a solution containing AgNO3 and Na2SeSO3 and Se thin films from an acidified solution of Na2SeSO3, at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 °C in vacuum (10−3 Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe2 or AgSb(S,Se)2 depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe2/Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed Voc = 435 mV and Jsc = 0.08 mA/cm2 under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe2 as an absorber material by a non-toxic selenization process is achieved. 相似文献
11.
The electron paramagnetic resonance (EPR) spectral data (the g factors and hyperfine structure constants) and d–d transition spectra for the tetragonal Mo5+ centre in [Mo6O19][N(C4H9)4]3 salt are theoretically investigated from the complete diagonalization method (CDM) for a 4d1 ion in tetragonally compressed octahedron. The theoretical results are in good agreement with the experimental data. The dependency of the g factors of the ground state on the R∥(MoO bond length) has been studied. It is shown that the g factors varied with the R∥ approximately in a linear way. 相似文献
12.
Y.C. Lin J.H. KeW.T. Yen S.C. LiangC.H. Wu C.T. Chiang 《Applied Surface Science》2011,257(9):4278-4284
In this study, Cu(In,Ga)(Se,S)2 (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se2 (CIGS) quaternary alloy target and an In2S3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In2S3 (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 1017 cm−3 and mobility of 1.2 cm2 V−1 s−1. The resulting film exhibited p-type conductivity with a double graded band-gap structure. 相似文献
13.
L.G. Gao K.B. Yin L. Chen H.X. Guo Y.D. Xia J. Yin Z.G. Liu 《Applied Surface Science》2009,256(1):90-95
Thermal stability, interfacial structures and electrical properties of amorphous (La2O3)0.5(SiO2)0.5 (LSO) films deposited by using pulsed laser deposition (PLD) on Si (1 0 0) and NH3 nitrided Si (1 0 0) substrates were comparatively investigated. The LSO films keep the amorphous state up to a high annealing temperature of 900 °C. HRTEM observations and XPS analyses showed that the surface nitridation of silicon wafer using NH3 can result in the formation of the passivation layer, which effectively suppresses the excessive growth of the interfacial layer between LSO film and silicon wafer after high-temperature annealing process. The Pt/LSO/nitrided Si capacitors annealed at high temperature exhibit smaller CET and EOT, a less flatband voltage shift, a negligible hysteresis loop, a smaller equivalent dielectric charge density, and a much lower gate leakage current density as compared with that of the Pt/LSO/Si capacitors without Si surface nitridation. 相似文献
14.
Xiaoyu ChenJiagang Wu Xiaojing ChengBo Wu Wenjuan WuDingquan Xiao Jianguo Zhu 《Current Applied Physics》2012,12(3):752-754
[Li0.03(K0.48Na0.52)0.97](Nb0.97Sb0.03)O3-(Ba0.85Ca0.15)(Ti0.90Zr0.10)O3 [(1−x)LKNNS-xBCTZ] lead-free piezoelectric ceramics were prepared by the conventional solid state method, and effects of BCTZ content on the piezoelectric properties of LKNNS ceramics were mainly investigated. A stable solid solution has been formed between LKNNS and BCTZ, and a morphotropic phase boundary of (1−x)LKNNS-xBCTZ ceramics is identified in the range of 0 < x ≤ 0.02. The Curie temperature of (1−x)LKNNS-xBCTZ ceramics decreases with increasing BCTZ content. A higher ?r value and a lower tan δ value are demonstrated for the (1−x)LKNNS-xBCTZ ceramic with x = 0.02. The (1−x)LKNNS-xBCTZ ceramic with x = 0.02 has an enhanced electrical behavior of d33 ∼ 237 pC/N, kp ∼ 48.6%, ?r ∼ 1451, tan δ ∼ 0.037, and Tc ∼ 335 °C. As a result, (1−x)LKNNS-xBCTZ ceramics are promising candidate materials for the field of lead-free piezoelectric materials. 相似文献
15.
Michaeleen R. Munrow Ranga Subramanian Andrea J. Minei Matthew K. MacLeod Raul Crespo Mitsuaki Izuha Yoshio Tatamitani Kenji Yamanou Stewart E. Novick 《Journal of Molecular Spectroscopy》2007,242(2):129-138
The microwave spectra of the gauche conformer of perfluoro-n-butane, n-C4F10, of perfluoro-iso-butane, (CF3)3CF, and of tris(trifluoromethyl)methane, (CF3)3CH, have been observed and assigned. The rotational and centrifugal distortion constants for gauche n-C4F10 are: A = 1058.11750(7) MHz, B = 617.6832(1) MHz, C = 552.18794(1) MHz, ΔJ = 0.0257(5) kHz, δJ = 0.0052(3) kHz. A C-C-C-C dihedral angle, ω, of ∼55° has been determined. These values agree well with those obtained from a coupled cluster (CCSD/cc-PVTZ) calculation. The rotational and centrifugal distortion constants for iso-C4F10 and iso-C4HF9 are: Bo = 816.4519(4) MHz, DJ = 0.023(2) kHz, and Bo = 903.6985(25) MHz, DJ = 0.043(4) kHz, respectively. The dipole moment of iso-C4F10 and iso-C4HF9 have been measured and found to be 0.0338(8) and 1.69(9) D, respectively. 相似文献
16.
The pseudo-potential plane-wave method using the generalized gradient approximation (GGA) within the framework of the density functional theory is applied to study the structural and thermodynamic properties of Y 3Al5O12. The lattice constants and bulk modulus are calculated. They keep in good agreement with other theoretical data and experimental results. The quasi-harmonic Debye model, in which the phononic effects are considered, is applied to the study of the thermodynamic properties. The temperature effect on the structural parameters, bulk modulus, thermal expansion coefficient, specific heats and Debye temperatures in the whole range from 0 to 20 GPa and temperature range from 0 to 1500 K. 相似文献
17.
The newly developed full-potential linearized augmented plane wave (LAPW) and local orbitals (lo) based on standard APW methods are briefly introduced, and the structure and magnetic properties of R(Fe, Si)12 compounds (R = Y, Nd) are calculated using the method. The distribution of Si at different sites is analyzed based on total energy of one crystal unit with structure having been optimized. The characters of magnetic moments, total density of states (TDOS) and partial density of states (PDOS) for different crystal sites Si occupies are obtained and analyzed. The results show that the total magnetic moments of RFe10Si2 (R = Y, Nd) are larger than those of RFe10M2 (M = Ti, V, Cr, Mn, Mo and W) and the hybridization mechanism is seen as follows. Si(8j) reduce the magnetic moments of Fe at three sites, however, Si(8f) mainly reduce the magnetic moments of Fe(8i) and Fe(8j) atoms. The Curie temperature is markedly enhanced by the introduction of Si atoms according to spin fluctuation of DOS at Fermi level. 相似文献
18.
19.
20.
Xie Lin-Hua Zhao Guo-Ping Qiu Min 《Journal of magnetism and magnetic materials》2010,322(15):2184-2186
In this work, a full ligand-field energy matrix (10×10) diagonalization treatment for 3d1 ions in tetragonal symmetry is developed on the basis of the two-s.o.-coupling-parameter model. Spin Hamiltonian parameters (g factors g∥, g⊥ and hyperfine structure constants A∥, A⊥) of the tetragonal V4+ center in Zn(antipyrine)2(NO3)2 are calculated from the complete energy matrix diagonalization method and the perturbation theory method. The calculated results from both methods are not only close to each other but also in good agreement with the experimental values. Furthermore, the compressed defect structure of V4+ center is discussed. 相似文献