Preparation and characteristics of?a?BaO–Al2O3–B2O3–SiO2–La2O3 glass ceramic via spray pyrolysis

The characteristics of a BaO–Al₂O₃–B₂O₃–SiO₂–La₂O₃ glass ceramic prepared by spray pyrolysis were studied. Glass powders with spherical shape and amorphous phase were prepared by complete melting at a preparation temperature of 1 500°C. The mean size and geometric standard deviation of the powders prepared at the temperature of 1 500°C were 0.6 μm and 1.3. The glass powders had similar composition to that of the spray solution. The glass transition temperature (T _g) of the glass powders was 600.3°C. Two crystallization exothermic peaks were observed at 769.3 and 837.8°C. Densification of the specimen started at a sintering temperature of 600°C, in which Ba₄La₆O(SiO₄)₆ as main crystal structure was observed. Complete densification of the specimen occurred at a sintering temperature of 800°C. The specimens sintered at temperatures above 800°C had main crystal structure of BaAl₂Si₂O₈.     

Investigation of structural,physical and optical properties of CeO2–Bi2O3–B2O3 glasses

xCeO₂–30Bi₂O₃–(70−x) B₂O₃ glasses are synthesized by using the melt quench technique. A number of studies such as XRD, density, molar volume, optical band gap, refractive index and FTIR spectroscopy are employed to characterize the glasses. The band gap decreases from 2.15 to 1.61 eV, refractive index increases from 2.67 to 2.93 and density increases from 4.151 to 4.633 g/cm³. The decrease in band gap with CeO₂ doping approaches the semiconductor behavior. FTIR spectroscopy reveals that incorporation of CeO₂ into glass network helps to convert the structural units of [BO₃] into [BO₄] and results in Bi–O bond vibration of [BiO₆].     

Broadband near-IR emission and temperature dependence in Er/Tm co-doped Bi2O3–SiO2–Ga2O3 glasses

The broadband near-IR emission has been investigated in a series of Er/Tm co-doped Bi₂O₃–SiO₂–Ga₂O₃ (BSG) glasses with 800 nm laser diode as an excitation source. A broadband emission extending from 1350 to 1650 nm with a full width at half maximum (FWHM) around 165 nm is obtained in 0.2 wt% Er₂O₃ and 1.0 wt% Tm₂O₃ co-doped BSG glass. The fluorescence decay curves of glasses are measured and maximum energy transfer efficiency from Er³⁺ to Tm³⁺ reaches 71% when Tm³⁺ concentration is 1.0 wt%. The temperature dependence of the broadband emission spectra in Er³⁺–Tm³⁺ co-doped BSG glass is also recorded to further understand the energy-transfer processes between Er³⁺ and Tm³⁺. The present work suggests that Er/Tm co-doped BSG glasses can be a potential candidate for broadband integrated amplifier.     

FTIR structural investigation of gamma irradiated BaO–Na2O–B2O3–SiO2 glasses

Fourier transform infrared (FT-IR) spectra of xBaO–15Na₂O–(70−x)B₂O₃–15SiO₂ glass system with x=0, 5, 10, 15 and 20 (mol%) has been measured in the spectral range 400–4000 cm⁻¹ at room temperature in order to understand the characteristic frequencies of the chemical bonds and bonding mechanisms, which are susceptible to the structural and spectral changes. The effect of gamma irradiation in the dose range 0.1 kGy–60 kGy on the infrared absorption spectra of these glasses is also reported. The change in the glass structure due to the effect of composition is also discussed. It has been observed that irradiation of the glasses with the gamma rays increases the BO₃ groups and the non bridging oxygens which make the network loose.     

Physical,optical and radiative properties of CaSO4–B2O3–P2O5 glasses doped with Sm3+ ions

Trivalent rare earth ions doped borosulfophosphate glasses are in high demand owing to their several unique attributes that are advantageous for applications in diverse photonic devices. Thus, Sm³⁺ ion doped calcium sulfoborophosphate glasses with composition of 25CaSO₄–30B₂O₃–(45?x)P₂O₅–xSm₂O₃ (where x?=?0.1, 0.3, 0.5, 0.7 and 1.0 mol%) were synthesized using melt-quenching technique. X-ray diffraction confirmed the amorphous nature of the prepared glass samples. Differential thermal analyses show transition peaks for melting temperature, glass transition and crystallization temperature. The glass stability is found in the range 91?°C to 116?°C which shows increased stability with addition of Sm₂O₃ concentration. The Fourier transform infrared spectral measurements carried out showed the presence of vibration bands due to PO linkage, BO_3, BO₄, PO₄, POP, OPO, SOB, and BOB unit. Glass density showed increase in value from 2.179 to 2.251?g cm^?3 with increase in Sm₂O₃ concentration. The direct, indirect band gap and Urbach energy calculated were found to be within 4.368–4.184?eV, 3.641–3.488?eV and 0.323–0.282?eV energy ranges, respectively. The absorption spectra revealed ten prominent peaks centered at 365, 400, 471, 941, 1075, 1228, 1375, 1477, 1528 and 1597?nm corresponding to ⁴D_3/2,⁶H_5/2→⁴I_11/2,⁶P_3/2, ⁶F_11/2, ⁶F_9/2, ⁶F_7/2, ⁶F_5/2, ⁶F_3/2, ⁶H_15/2 and ⁶F_1/2 transitions respectively. Photoluminescence spectra monitored at the excitation of 398?nm exhibits four emission bands positioned at 559, 596,643 and 709?nm corresponding to ⁴G_5/2→⁶H_5/2, ⁶H_7/2, ⁶H_9/2 and ⁶H_11/2 transitions respectively. The nephelauxetic parameters calculated showed good influence on the local environment within the samarium ions site and the state of the SmO bond. The Judd–Ofelt intensity parameters calculated for all glass samples revealed that Ω_6?>?Ω_4?>?Ω₂. The emission cross-section and the branching ratios values obtained for ⁴G_5/2→⁶H_7/2 transition indicate its suitability for LEDs and solid-state laser application.     

Varistor and dielectric properties of Cr2O3 doped SnO2–Zn2SnO4 composite ceramics

Cr₂O₃ doped SnO₂–Zn₂SnO₄ composite ceramics were prepared by traditional ceramic processing and the varistor, dielectric properties were investigated. With increasing Cr₂O₃ content, the breakdown electrical field E_B increases from 11 to 92 V/mm and the relative dielectric constant ε_r measured at 1 kHz, 50 °C decreases from 11,028 to 3412, respectively. The barrier height ?_B about 0.8–0.84 eV and the decreasing of SnO₂ grain size suggest that the varistor behavior with high ε_r is originated from SnO₂–SnO₂ or SnO₂–Zn₂SnO₄ grain boundary. In the dielectric spectra lower than 1 kHz, a dielectric peak is presented and depressed with increasing bias voltage. Similarly, at high temperature, the dielectric constant also presents a dielectric peak in the temperature spectra and the peak becomes faint with increasing frequency. The exhibition of the dielectric peak is thought to be attributed to the conduction of grain boundary since it is accompanied by the sharp increase of dielectric loss. In addition, a dielectric relaxation with the activation energy about 0.4–0.5 eV was observed in the temperature range of 20–100 °C. Based on the results, the formation mechanism of Schottky barriers at grain boundaries and the varistor behavior with high dielectric constant are well understood.     

Y2O3·Cr2O3复合氧化物热力学性质的研究

在1182—1386K温度范围内,用固体电解质氧浓差电池:Mo|Cr,Y₂O₃,Y₂O₃·Cr₂O₃|ZrO₂(+MgO)|Cr,Cr₂O₃|Mo测定了复合氧化物Y₂O₃·Cr₂O₃的热力学性质。对于反应Y_{2关键词：}     

BaO-Li2O-B2O3三元系中BaB2O4-Li2B2O4和BaB2O4-Li2O截面相平衡关系的研究

本文用X射线和差热分析方法对BaO-Li₂O-B₂O₃三元系中的两个截面:BaB₂O₄-Li₂B₂O₄和BaB₂O₄-Li₂O作了研究。在BaB₂O₄-Li₂B₂O₄赝二元系中发现了一个新的化合物4BaB₂O₄·Li₂B₂O₄。化合物在930±3℃由包晶反应形成,并与Li₂B₂O₄形成共晶反应。共晶温度为797±3℃,共晶点组分为79mol％Li₂B₂O₄。在BaB₂O₄-Li₂O截面中也存在化合物4BaB₂O₄·Li₂B₂O₄,其包晶反应温度从930±3℃随Li₂O含量增加下降到908±3℃。在组分60mol％Li₂O处形成另一个新的化合物2BaB₂O₄·3Li₂O。该化合物在630±3℃也是由包晶反应形成,并与Li₂O和Li₂CO₃分别形成共晶反应,共晶温度分别为400±3℃和612±3℃。在BaB₂O₄-Li₂B₂O₄和BaB₂O₄-Li₂O体系中都没有观察到固溶体。用计算机程序分别对化合物4BaB₂O₄·Li₂B₂O₄和2BaB₂O₄·3Li₂O的X射线粉末衍射图案进行了指标化,其结果:4BaB₂O₄·Li₂B₂O₄的空间群为Pmma,a=13.033?,b=14.630?,c=4.247?,每个单胞包含两个化合式单位;2BaB₂O₄·3Li₂O的空间群为Pmmm,a=4.814?,b=9.897?,c=11.523?,每个单胞也含有两个化合式单位。 关键词：     

PbBi2Nb2O9的晶体结构

PbBi₂Nb₂O₉晶体属正交晶系,空间群为D_2h²³-Fmmm。晶胞参数为a=5.4806(7)?,b=5.4791(7)?,c=25.416(3)?,α=β=γ=90.0(0)°,V=763.2(2)?³。单位晶胞内化学式数z=4,D_obs=7.91g/cm³,D_x=8.26g/cm³ 关键词：     

Electrodeposition of TiO2–RuO2–IrO2 coating on titanium substrate

TiO₂, RuO₂, and IrO₂ transition metal oxides have many applications in the field of applied electrochemistry. In this work, the mixed solid solutions of TiO₂–RuO₂–IrO₂ coatings have been electrodeposited from aqueous–unaqueous baths.     

Al2O3增强的Co2-C98/Al2O3/Si异质结的光伏效应

随着能源危机的加剧,太阳能电池作为开发和利用太阳能的一种普遍形式, 日益受到世界各国的重视.随着太阳能电池向着高效率、薄膜化、无毒性和原材料丰富的方向发展, 单纯的硅系太阳能电池已经无法达到这样的要求,因此新的材料和工艺的开发利用迫在眉睫. 本文研究了碳材料在硅异质节上实现光伏效应的改善及其可能在太阳能电池上的应用. 采用脉冲激光沉积方法制备的Co₂-C₉₈/Al₂O₃/Si异质结构在标准日光照射 (AM1.5, 100 mW/cm²)条件下,可获得0.447 V的开路电压和18.75 mA/cm²的电流密度, 转换效率可达3.27%.通过电容电压特性和暗条件下的电输运性能测量, 证明了氧化铝层的引入不但对单晶硅的表面起到了物理钝化作用,减小了反向漏电流, 使异质结界面缺陷、界面能级和复合中心减少,还起到了场效应钝化作用, 增加了异质结界面的势垒高度,增加了开路电压,使异质结的光伏效应显著增强.     

Eu2O3在η-Al2O3和SiO2上固体-固体表面相互作用的研究

用穆斯堡尔谱和X射线衍射技术研究了Eu₂O₃在η-Al₂O₃和硅胶上的固体表面吸附。 关键词：     

Al2O3衬底MgB2超薄膜的研究

我们利用混合物理化学气相沉积法(Hybrid physical-chemical vapor deposition简称为HPCVD)在(000l)Al2O3衬底上制备了系列干净的MgB2超薄膜,并通过R-T测量、SEM测量、M-T测量、XRD测量对它们进行了表征,探究了其超导电磁性能和薄膜的生长机制.其中的7.5nm厚的MgB2超薄膜为已报导的蓝宝石衬底上生长的性能最高的超薄膜.     

Bi2Pb2V2O10的晶体结构

使用X射线单晶衍射法测定了Bi₂Pb₂V₂O₁₀的结构。该晶体属三斜晶系,空间群为C₁¹-P1,单位晶胞内化学式数Z=1,晶胞参数为:a=7.084(4)?,b=7.278(3)?,c=5.587(3)?,α=111.91(5)°,β=95.01(6)°,γ=108.86(4)°,V=245.70?³,D_x=7.35g/cm³,μ(MoK_α)=678,94cm^-1,F(000)=456。用Patterson函数分析及Forier技术测定了结构,对原子坐标、各向同性及各向异性热参数进行了最小二乘方修正,R=0.079。结构分析表明,Bi₂Pb₂V₂O₁₀的Pb原子与O原子形成八角十二面体,Bi原子与O原子形成六角多面体。两个共棱的Pb—O多面体与两个共棱的Bi—O多面体相连,并沿bc平面无限延伸。讨论了吸收的影响。最后,将Bi₂Pb₂VO₁₀的结构与Pb₂SO₅的结构进行了比较。 关键词：     

La2O3对Yb:Y2O3透明陶瓷光谱性能的影响

研究了La₂O₃对Yb：Y₂O₃透明陶瓷光谱性能的影响，添加适量La₂O₃以后，Yb：Y₂O₃透明陶瓷的吸收峰和发射峰的位置不变，但由于La³⁺的离子半径大于Y³⁺的离子半径，在Y₂O₃中引入La³⁺离子后，导致Y₂O₃晶格常数变大，晶场强度变弱，同时降低了Y₂O₃晶体的有序度，致使发射峰强度有所下降，发射截面变小.过量的La₂O₃（x=0.16）造成Yb³⁺激活离子发射强度明显下降；其荧光寿命在添加La₂O₃后总体增大45%—60%. 关键词： 氧化镧 氧化钇 透明陶瓷 光谱性能     

CoFe2O4和MnFe2O4纳米复合介质的制备及其磁性研究

采用热分解法制备了分散程度高且平均晶粒尺寸为20 nm的CoFe₂O₄和MnFe₂O₄复合介质.低温磁化曲线测量显示,制备的复合介质具有软-硬磁交换弹性耦合效应,且合成温度以及软磁和硬磁相的成分比例对磁交换弹性耦合的强度有很大的影响.变温磁测量显示,温度为20K时,复合纳米介质的表面自旋冻结效应导致饱和磁化强度显著增加.Henkel测量显示,对分散的CoFe₂O₄和MnFe₂O₄复合介质,磁偶极相互作用占主导作用.     

Ga2O3组分对Tm3+掺杂GeO2-Ga2O3-Li2O-BaO-La2O3玻璃的光谱性能影响

制备了Tm³⁺(8.0mol%)掺杂(77-x)GeO₂-xGa₂O₃-8Li₂O-10BaO-5La₂O₃(x=4,8,12,16)系列玻璃.系统地研究了Ga₂O₃从4mol%变化到16mol%时,玻璃的光谱性质与热学性质的变化规律.差热分析表明,随着Ga₂O₃含量的增加,锗酸盐玻璃的热稳定性增加.运用Judd-Ofelt(J_O)理论计算得到了Tm³⁺在不同Ga₂O₃含量的GeO₂-Ga₂O₃-Li₂O-BaO-La₂O₃玻璃中的J-O强度参数(Ω₂,Ω₄,Ω₆)及Tm³⁺各激发能级的自发跃迁概率、荧光分支比以及辐射寿命等光谱参量.在808nm激光二极管的激发下,测试并分析了Ga₂O₃对Tm³⁺荧光光谱特性的影响.随着Ga₂O₃从4mol%增加到16mol%,Tm³⁺在1.8μm处的荧光强度呈现先减弱后增强的特性.当Ga₂O₃含量大约在12mol%时,Tm³⁺在1.8μm处的荧光强度最弱,受激发射截面达到最小.还初步讨论了Ga₂O₃对玻璃结构与光谱参数的影响规律. 关键词： 3+掺杂锗酸盐玻璃')" href="#">Tm³⁺掺杂锗酸盐玻璃 光谱性能 Judd-Ofelt参数 热稳定性     

BaB2O4-K2O和BaB2O4-K2B2O4赝二元系相图的研究

用X射线衍射和差热分析方法研究了BaB₂O₄-K₂O和BaB₂O₄-K₂B₂O₄赝二元系的相平衡关系。BaB₂O₄-K₂B₂O₄属共晶体系,共晶温度为850±3℃,共晶点成分为45mol％K₂O。在Ba 关键词：     

基于TaCl5的Ta2O2气凝胶制备工艺

 主要介绍了以TaCl₅为前驱体,低分子醇类为溶剂,分别采用环氧丙烷和环氧氯丙烷作为凝胶促进剂制备Ta₂O₂湿凝胶,湿凝胶经过CO₂超临界干燥而获得白色Ta₂O₂气凝胶。透射电镜图谱表明气凝胶是由粒度为10～20 nm的颗粒堆积而成。N₂等温吸附-脱附分析表明,气凝胶的比表面积为800～900 m²/g。