Microstructure and switching mechanism of stacked CoCrPt–SiO2 perpendicular recording media

Perpendicular magnetic recording media consisting of two stacked CoCrPt–SiO₂ recording layers incorporating different O₂ content in each layer were studied. The samples used Ru intermediate layers. With increasing O₂ levels in the lower recording layer, the samples exhibited marginal change in the crystallographic texture, and superior overall magnetic properties such as higher coercivity and improved exchange decoupling. However, the media grain size remained unchanged. Investigations into the switching mechanism by means of virgin and isothermal remanence magnetization measurements showed the predominance of Stoner–Wohlfarth coherent reversal modes in all samples. The thermal stability dropped slightly. A model that describes the evolution of the microstructure in stacked perpendicular recording media is presented to understand these observations.     

Microstructural and magnetic studies of L10 FePt–SiO2 nano-composite thin film with columnar structure for perpendicular magnetic recording

(Fe₅₀Pt₅₀)_100−x-(SiO₂)_x films (x=0–30 vol%) were grown on a textured Pt(0 0 1)/CrRu(0 0 2) bilayer at 420 °C using glass substrates. FePt(0 0 1) preferred orientation was obtained in the films. Interconnected microstructure with an average grain size of about 30 nm is observed in the binary FePt film. As SiO₂ is incorporated, it precipitates as particles are dispersed at FePt grain boundaries. When the content of SiO₂ is increased to 13 vol%, columnar FePt with (0 0 1) texture separated by SiO₂ is attained. The FePt columns have a length/radius ratio of 2:1. Additionally, the mean grain size is reduced to about 13 nm. The development of this well-isolated columnar structure leads to an enhancement in coercivity by about 44% from 210 to 315 kA/m. As the SiO₂ content exceeds 20 vol%, a significant ordering reduction is found accompanied by a transformation of preferred orientation from (0 0 1) to (2 0 0) and the columnar structure disappears, resulting in a drastic degradation in magnetism. The results of our study suggest that isolated columnar, grain refined, (0 0 1)-textured FePt film can be achieved via the fine control of SiO₂ content. This may provide useful information for the design of FePt perpendicular recording media.     

Luminescence from Ce in sol–gel SiO2

The sol–gel process provides an attractive low temperature alternative to the melt process for producing Ce-doped silica, but reports of the emission wavelength have not been consistent. In this paper, luminescence measurements using a variety of excitation methods, including cathodoluminescence not yet reported by other researchers, are compared and evaluated in the light of previously published data. Several papers report luminescence around 350 nm but emission near this wavelength was not found from our samples. This luminescence originates from Ce that has not yet been incorporated in the silica and is found in samples that have not undergone high temperature annealing. Our photoluminescence results from samples annealed in a reducing atmosphere suggest that emission from Ce incorporated in the silica lattice occurs near 455 nm, and some indication of the emission from Ce in amorphous clusters at 400 nm is also found. However, our results also confirm earlier indications that intrinsic defects in silica can create photoluminescence near both these wavelengths, which can make identification of the luminescence due to Ce difficult. Finally, it has been found that samples which have been annealed in air, and therefore display poor photoluminescence because most of the Ce occurs in the tetravalent form, are luminescent under electron beam excitation. It is suggested that during cathodoluminescence measurements Ce⁴⁺ ions capture electrons to form excited Ce³⁺ ions from which the luminescence originates.     

Broadband near-IR emission and temperature dependence in Er/Tm co-doped Bi2O3–SiO2–Ga2O3 glasses

The broadband near-IR emission has been investigated in a series of Er/Tm co-doped Bi₂O₃–SiO₂–Ga₂O₃ (BSG) glasses with 800 nm laser diode as an excitation source. A broadband emission extending from 1350 to 1650 nm with a full width at half maximum (FWHM) around 165 nm is obtained in 0.2 wt% Er₂O₃ and 1.0 wt% Tm₂O₃ co-doped BSG glass. The fluorescence decay curves of glasses are measured and maximum energy transfer efficiency from Er³⁺ to Tm³⁺ reaches 71% when Tm³⁺ concentration is 1.0 wt%. The temperature dependence of the broadband emission spectra in Er³⁺–Tm³⁺ co-doped BSG glass is also recorded to further understand the energy-transfer processes between Er³⁺ and Tm³⁺. The present work suggests that Er/Tm co-doped BSG glasses can be a potential candidate for broadband integrated amplifier.     

Magnetic and structural properties of CaO–SiO2–P2O5–Na2O–Fe2O3 glass ceramics

Magnetic properties of glass ceramics derived from glasses with composition 41CaO·(52−x)SiO₂·4P₂O₅·xFe₂O₃·3Na₂O (2?x?10 mol% iron oxide (Fe₂O₃)) are reported. Structural investigation revealed the presence of nanocrystalline magnetite phase in the heat-treated samples containing x?2 mol% Fe₂O₃. Magnetic hysteresis cycles of the glass-ceramic samples were obtained with a maximum applied field of ±20 kOe as well as a low field of ±500 Oe, in order to evaluate the potential of these glass ceramics for hyperthermia treatment of cancer. Samples with x>2 mol% of iron oxide exhibited magnetic behavior similar to soft magnetic materials with low coercivity. The evolution of magnetic properties in these samples as a function of iron oxide molar concentration is correlated with the amount and crystallite size of magnetite phase present in them.     

Preparation and characteristics of?a?BaO–Al2O3–B2O3–SiO2–La2O3 glass ceramic via spray pyrolysis

The characteristics of a BaO–Al₂O₃–B₂O₃–SiO₂–La₂O₃ glass ceramic prepared by spray pyrolysis were studied. Glass powders with spherical shape and amorphous phase were prepared by complete melting at a preparation temperature of 1 500°C. The mean size and geometric standard deviation of the powders prepared at the temperature of 1 500°C were 0.6 μm and 1.3. The glass powders had similar composition to that of the spray solution. The glass transition temperature (T _g) of the glass powders was 600.3°C. Two crystallization exothermic peaks were observed at 769.3 and 837.8°C. Densification of the specimen started at a sintering temperature of 600°C, in which Ba₄La₆O(SiO₄)₆ as main crystal structure was observed. Complete densification of the specimen occurred at a sintering temperature of 800°C. The specimens sintered at temperatures above 800°C had main crystal structure of BaAl₂Si₂O₈.     

FTIR structural investigation of gamma irradiated BaO–Na2O–B2O3–SiO2 glasses

Fourier transform infrared (FT-IR) spectra of xBaO–15Na₂O–(70−x)B₂O₃–15SiO₂ glass system with x=0, 5, 10, 15 and 20 (mol%) has been measured in the spectral range 400–4000 cm⁻¹ at room temperature in order to understand the characteristic frequencies of the chemical bonds and bonding mechanisms, which are susceptible to the structural and spectral changes. The effect of gamma irradiation in the dose range 0.1 kGy–60 kGy on the infrared absorption spectra of these glasses is also reported. The change in the glass structure due to the effect of composition is also discussed. It has been observed that irradiation of the glasses with the gamma rays increases the BO₃ groups and the non bridging oxygens which make the network loose.     

Surface reconstruction on stishovite SiO2,HfO2 and rutile TiO2 （001）

This paper systematically investigates the surface reconstruction processes and patterns on stishovite SiO 2,HfO 2 and rutile TiO 2 (001) by using classical molecular dynamics.It is found that these three surfaces relax instead of reconstruction at 0 K,and have little possibility to reconstruct below 40 K.Above 40 K,surface reconstructions take place as collective atomic motion which can be speeded by higher temperature or compressed strain.Several reconstruction patterns with approximate surface energies are found,and electrostatic potentials on them are also provided in comparison with possible microscopic results.     

SiO2/HfO2高反射膜的研制

主要讨论了电子束蒸发SiO2/HfO2薄膜的面形控制和损伤性能。研究了电子束蒸发工艺参数对薄膜应力以及面形的影响;分析了制备工艺对薄膜吸收、节瘤缺陷密度的影响,测量了制备薄膜的损伤阈值。研究结果表明:调整SiO2蒸发时的氧分压可以有效地将薄膜的应力控制在-250~-50 MPa。同时采用金属Hf蒸发可以显著地将节瘤缺陷密度从12.6 mm-2降低至2.7 mm-2,同时将损伤阈值从30 J/cm2提高至55 J/cm2。     

SiO2/HfO2高反射膜的研制

主要讨论了电子束蒸发SiO2/HfO2薄膜的面形控制和损伤性能。研究了电子束蒸发工艺参数对薄膜应力以及面形的影响;分析了制备工艺对薄膜吸收、节瘤缺陷密度的影响,测量了制备薄膜的损伤阈值。研究结果表明：调整SiO2蒸发时的氧分压可以有效地将薄膜的应力控制在-250~-50 MPa。同时采用金属Hf蒸发可以显著地将节瘤缺陷密度从12.6 mm-2降低至2.7 mm-2,同时将损伤阈值从30 J/cm2提高至55 J/cm2。

     

N2 and O2 pressure broadening and pressure shift in the 4ν2 band of OCS

To measure accurately OCS concentrations in planetary atmospheres, it is important to know precisely nitrogen and oxygen pressure broadening and pressure-induced shift coefficients for the lines used in the retrievals. We present in this study the corresponding coefficients for lines of the P and R branches of the 4ν₂ band of the primary isotopologue of carbonyl sulfide (¹⁶O¹²C³²S).For this purpose, infrared absorption spectra of a natural carbonyl sulfide (OCS) gas sample were recorded at an unapodized resolution of 0.004 cm⁻¹, at room temperature for different pressures of N₂ and O₂, using a Bruker IFS125HR spectrometer at the LISA Laboratory in France. The line parameters were derived using the multispectrum fitting method applied to the measured shapes of the lines, including the interference effects caused by the line overlaps.The results are compared with earlier measurements and with values calculated using a semi-classical model based upon the Robert and Bonamy formalism that reproduces rather well the experimental m (m=−J for P(J) lines and m=J+1 for R(J) lines) quantum number dependence of the N₂ and O₂ broadening coefficients. On the other hand most of the lines studied here have positive shift coefficients, which do not show any systematic dependence on m. However, in previous studies of the ν₃, 2ν₃ and ν₂ bands, these coefficients were negative for all lines.     

Correlation between microstructure and first-order magnetization reversal in the SmCo5/α-Fe nanocomposite magnets

SmCo₅/α-Fe nanocomposite magnets with different morphology have been fabricated by ball milling of the micrometer sized SmCo₅ and α-Fe powders. The α-Fe grains vary from elongated nano-strips to spherical nanoparticles with increasing milling time. The inter-phase exchange coupling is enhanced with increasing milling time due to reduced grain size. The first-order reversal curves (FORCs) are taken to identify optimal conditions for exchange coupling. It has been found that the stripped morphology results in weak inter-phase exchange coupling, while enhanced exchange coupling is observed with further reduction of the soft-phase grain size. Compared with the measurement of demagnetization curves, FORC analysis provides more information on the magnetostatic as well as the exchange interactions.     

脉冲激光辐照TiO2/SiO2薄膜热效应研究

 采用1.06 μm单脉冲激光在不同能量密度下辐照特殊光电系统中典型薄膜光学元件，理论分析了激光辐照薄膜元件产生的温度场和热应力场，在此基础上建立了激光辐照多层薄膜的物理模型，计算软件使用ANSYS软件的热分析模块对激光辐照薄膜元件产生的温度场和热应力场进行了模拟，分别给出不同激光能量密度下薄膜表面光斑中心的温度场、径向温度场和轴向温度场分布；同时给出不同能量密度下薄膜的轴向、径向和环向热应力分布。并对激光辐照薄膜元件产生的温度场、热应力场进行了分析，阐明了原因。     

HfO2/SiO2薄膜的激光预处理作用研究

对电子束蒸发方式镀制的HfO2/SiO2反射膜采用大口径激光进行辐照,采用激光量热计测量了激光辐射前后的弱吸收值。实验发现HfO2/SiO2反射膜在分别采用1 064 nm和532 nm的激光辐照前后薄膜吸收分别从5.4%和1.7%降低到1.4和1.2%。采用聚焦离子束技术分析了激光辐照后薄膜的损伤形态并探究了损伤原因,发现：薄膜在激光辐照下存在节瘤的地方容易出现薄膜损伤,具体表现为熔融、部分喷发、完全脱落3种形态,节瘤缺陷种子来源的差异是导致其损伤机理也存在着巨大差异的主要原因。同时这些节瘤缺陷种子来源也影响着激光预处理作用效果,激光预处理技术对于祛除位于基底上种子形成的节瘤是有效的,原因是激光辐射过后该节瘤进行了预喷发而不会对后续激光产生影响;而激光预处理技术对位于膜层中间的可能是镀膜过程中材料飞溅引起的缺陷是无效的,需要通过飞秒激光手段对该类节瘤进行祛除。     

脉冲激光辐照TiO2/SiO2薄膜热效应研究

采用1.06 μm单脉冲激光在不同能量密度下辐照特殊光电系统中典型薄膜光学元件,理论分析了激光辐照薄膜元件产生的温度场和热应力场,在此基础上建立了激光辐照多层薄膜的物理模型,计算软件使用ANSYS软件的热分析模块对激光辐照薄膜元件产生的温度场和热应力场进行了模拟,分别给出不同激光能量密度下薄膜表面光斑中心的温度场、径向温度场和轴向温度场分布;同时给出不同能量密度下薄膜的轴向、径向和环向热应力分布。并对激光辐照薄膜元件产生的温度场、热应力场进行了分析,阐明了原因。     

Anisotropy and temperature dependence of the first critical field in 2H–NbS2

We report on μ$\mu$ Hall probe measurements on single crystals of 2H–NbS₂. This compound is the only superconducting 2H-dichalcogenide which does not develop a charge density wave. At low temperature and low magnetic field, a Bean profile is observed, allowing to evaluate the critical current. Moreover, the anisotropy and temperature dependence of the first critical field in 2H–NbS₂ was measured down to 1.2 K. A linear temperature dependence of the first penetration field is clearly observed. The absolute magnetic penetration depth is found to be 83 nm which is slightly reduced compared to the iso-structural compound 2H–NbSe₂.     

HfO2/SiO2多层高反膜激光预处理技术

采用不同的光斑移动距离,对电子束蒸发制备的HfO2/SiO2多层高反膜进行了单步及多步预处理。结果表明:为了使薄膜不产生损伤,预处理最高能量密度最好不超过薄膜零几率损伤阈值的90%; 相同预处理效率下进行的单步预处理对提高光学薄膜抗激光损伤阈值的效果比多步预处理好;对HfO2/SiO2高反膜进行98.4%能量覆盖的两步预处理后薄膜损伤阈值提高81%;控制薄膜的缺陷源,初始物质应采用金属Hf。     

Luminescent properties of YVO4:Eu/SiO2 core–shell composite particles

We report an efficient process for preparing monodisperse SiO₂@Y_0.95Eu_0.05VO₄ core–shell phosphors using a simple citrate sol–gel method and without the use of surface-coupling silane agents or large stabilizers. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and photoluminescence (PL) spectra were used to characterize the resulting SiO₂@Y_0.95Eu_0.05VO₄ core–shell phosphors. The XRD results demonstrate that the Y_0.95Eu_0.05VO₄ particles crystallization on the surface of SiO₂ annealing at 800 °C is perfectly and the crystallinity increases with raising the annealing temperature. The obtained core–shell phosphors have a near perfect spherical shape with narrow size distribution (average size ca. 500 nm and an average thickness of ~50 nm), are not agglomerated, and have a smooth surface. The thickness of the YVO₄:Eu³⁺ shells on the SiO₂ cores could be easily tailored by changing the mass ratio of shell to core (W = [YVO₄]/[SiO₂]) (~50 nm for W = 30%). The Eu³⁺ shows a strong PL luminescence (dominated by ⁵D₀ − ⁷F₂ red emission at 618 nm) under the excitation of 320 nm UV light. The PL intensity of Eu³⁺ increases with increasing the annealing temperature and the values of W.     

HfO2/SiO2多层高反膜激光预处理技术

采用不同的光斑移动距离,对电子束蒸发制备的HfO2/SiO2多层高反膜进行了单步及多步预处理。结果表明:为了使薄膜不产生损伤,预处理最高能量密度最好不超过薄膜零几率损伤阈值的90%; 相同预处理效率下进行的单步预处理对提高光学薄膜抗激光损伤阈值的效果比多步预处理好;对HfO2/SiO2高反膜进行98.4%能量覆盖的两步预处理后薄膜损伤阈值提高81%;控制薄膜的缺陷源,初始物质应采用金属Hf。