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1.
Perpendicular magnetic recording media consisting of two stacked CoCrPt–SiO2 recording layers incorporating different O2 content in each layer were studied. The samples used Ru intermediate layers. With increasing O2 levels in the lower recording layer, the samples exhibited marginal change in the crystallographic texture, and superior overall magnetic properties such as higher coercivity and improved exchange decoupling. However, the media grain size remained unchanged. Investigations into the switching mechanism by means of virgin and isothermal remanence magnetization measurements showed the predominance of Stoner–Wohlfarth coherent reversal modes in all samples. The thermal stability dropped slightly. A model that describes the evolution of the microstructure in stacked perpendicular recording media is presented to understand these observations.  相似文献   

2.
(Fe50Pt50)100−x-(SiO2)x films (x=0–30 vol%) were grown on a textured Pt(0 0 1)/CrRu(0 0 2) bilayer at 420 °C using glass substrates. FePt(0 0 1) preferred orientation was obtained in the films. Interconnected microstructure with an average grain size of about 30 nm is observed in the binary FePt film. As SiO2 is incorporated, it precipitates as particles are dispersed at FePt grain boundaries. When the content of SiO2 is increased to 13 vol%, columnar FePt with (0 0 1) texture separated by SiO2 is attained. The FePt columns have a length/radius ratio of 2:1. Additionally, the mean grain size is reduced to about 13 nm. The development of this well-isolated columnar structure leads to an enhancement in coercivity by about 44% from 210 to 315 kA/m. As the SiO2 content exceeds 20 vol%, a significant ordering reduction is found accompanied by a transformation of preferred orientation from (0 0 1) to (2 0 0) and the columnar structure disappears, resulting in a drastic degradation in magnetism. The results of our study suggest that isolated columnar, grain refined, (0 0 1)-textured FePt film can be achieved via the fine control of SiO2 content. This may provide useful information for the design of FePt perpendicular recording media.  相似文献   

3.
The broadband near-IR emission has been investigated in a series of Er/Tm co-doped Bi2O3–SiO2–Ga2O3 (BSG) glasses with 800 nm laser diode as an excitation source. A broadband emission extending from 1350 to 1650 nm with a full width at half maximum (FWHM) around 165 nm is obtained in 0.2 wt% Er2O3 and 1.0 wt% Tm2O3 co-doped BSG glass. The fluorescence decay curves of glasses are measured and maximum energy transfer efficiency from Er3+ to Tm3+ reaches 71% when Tm3+ concentration is 1.0 wt%. The temperature dependence of the broadband emission spectra in Er3+–Tm3+ co-doped BSG glass is also recorded to further understand the energy-transfer processes between Er3+ and Tm3+. The present work suggests that Er/Tm co-doped BSG glasses can be a potential candidate for broadband integrated amplifier.  相似文献   

4.
Magnetic properties of glass ceramics derived from glasses with composition 41CaO·(52−x)SiO2·4P2O5·xFe2O3·3Na2O (2?x?10 mol% iron oxide (Fe2O3)) are reported. Structural investigation revealed the presence of nanocrystalline magnetite phase in the heat-treated samples containing x?2 mol% Fe2O3. Magnetic hysteresis cycles of the glass-ceramic samples were obtained with a maximum applied field of ±20 kOe as well as a low field of ±500 Oe, in order to evaluate the potential of these glass ceramics for hyperthermia treatment of cancer. Samples with x>2 mol% of iron oxide exhibited magnetic behavior similar to soft magnetic materials with low coercivity. The evolution of magnetic properties in these samples as a function of iron oxide molar concentration is correlated with the amount and crystallite size of magnetite phase present in them.  相似文献   

5.
The characteristics of a BaO–Al2O3–B2O3–SiO2–La2O3 glass ceramic prepared by spray pyrolysis were studied. Glass powders with spherical shape and amorphous phase were prepared by complete melting at a preparation temperature of 1 500°C. The mean size and geometric standard deviation of the powders prepared at the temperature of 1 500°C were 0.6 μm and 1.3. The glass powders had similar composition to that of the spray solution. The glass transition temperature (T g) of the glass powders was 600.3°C. Two crystallization exothermic peaks were observed at 769.3 and 837.8°C. Densification of the specimen started at a sintering temperature of 600°C, in which Ba4La6O(SiO4)6 as main crystal structure was observed. Complete densification of the specimen occurred at a sintering temperature of 800°C. The specimens sintered at temperatures above 800°C had main crystal structure of BaAl2Si2O8.  相似文献   

6.
Fourier transform infrared (FT-IR) spectra of xBaO–15Na2O–(70−x)B2O3–15SiO2 glass system with x=0, 5, 10, 15 and 20 (mol%) has been measured in the spectral range 400–4000 cm−1 at room temperature in order to understand the characteristic frequencies of the chemical bonds and bonding mechanisms, which are susceptible to the structural and spectral changes. The effect of gamma irradiation in the dose range 0.1 kGy–60 kGy on the infrared absorption spectra of these glasses is also reported. The change in the glass structure due to the effect of composition is also discussed. It has been observed that irradiation of the glasses with the gamma rays increases the BO3 groups and the non bridging oxygens which make the network loose.  相似文献   

7.
汤富领  岳瑞  路文江 《中国物理 B》2011,20(2):26801-026801
This paper systematically investigates the surface reconstruction processes and patterns on stishovite SiO 2,HfO 2 and rutile TiO 2 (001) by using classical molecular dynamics.It is found that these three surfaces relax instead of reconstruction at 0 K,and have little possibility to reconstruct below 40 K.Above 40 K,surface reconstructions take place as collective atomic motion which can be speeded by higher temperature or compressed strain.Several reconstruction patterns with approximate surface energies are found,and electrostatic potentials on them are also provided in comparison with possible microscopic results.  相似文献   

8.
主要讨论了电子束蒸发SiO2/HfO2薄膜的面形控制和损伤性能。研究了电子束蒸发工艺参数对薄膜应力以及面形的影响;分析了制备工艺对薄膜吸收、节瘤缺陷密度的影响,测量了制备薄膜的损伤阈值。研究结果表明:调整SiO2蒸发时的氧分压可以有效地将薄膜的应力控制在-250~-50 MPa。同时采用金属Hf蒸发可以显著地将节瘤缺陷密度从12.6 mm-2降低至2.7 mm-2,同时将损伤阈值从30 J/cm2提高至55 J/cm2。  相似文献   

9.
To measure accurately OCS concentrations in planetary atmospheres, it is important to know precisely nitrogen and oxygen pressure broadening and pressure-induced shift coefficients for the lines used in the retrievals. We present in this study the corresponding coefficients for lines of the P and R branches of the 4ν2 band of the primary isotopologue of carbonyl sulfide (16O12C32S).For this purpose, infrared absorption spectra of a natural carbonyl sulfide (OCS) gas sample were recorded at an unapodized resolution of 0.004 cm−1, at room temperature for different pressures of N2 and O2, using a Bruker IFS125HR spectrometer at the LISA Laboratory in France. The line parameters were derived using the multispectrum fitting method applied to the measured shapes of the lines, including the interference effects caused by the line overlaps.The results are compared with earlier measurements and with values calculated using a semi-classical model based upon the Robert and Bonamy formalism that reproduces rather well the experimental m (m=−J for P(J) lines and m=J+1 for R(J) lines) quantum number dependence of the N2 and O2 broadening coefficients. On the other hand most of the lines studied here have positive shift coefficients, which do not show any systematic dependence on m. However, in previous studies of the ν3, 2ν3 and ν2 bands, these coefficients were negative for all lines.  相似文献   

10.

主要讨论了电子束蒸发SiO2/HfO2薄膜的面形控制和损伤性能。研究了电子束蒸发工艺参数对薄膜应力以及面形的影响;分析了制备工艺对薄膜吸收、节瘤缺陷密度的影响,测量了制备薄膜的损伤阈值。研究结果表明:调整SiO2蒸发时的氧分压可以有效地将薄膜的应力控制在-250~-50 MPa。同时采用金属Hf蒸发可以显著地将节瘤缺陷密度从12.6 mm-2降低至2.7 mm-2,同时将损伤阈值从30 J/cm2提高至55 J/cm2。

  相似文献   

11.
 采用1.06 μm单脉冲激光在不同能量密度下辐照特殊光电系统中典型薄膜光学元件,理论分析了激光辐照薄膜元件产生的温度场和热应力场,在此基础上建立了激光辐照多层薄膜的物理模型,计算软件使用ANSYS软件的热分析模块对激光辐照薄膜元件产生的温度场和热应力场进行了模拟,分别给出不同激光能量密度下薄膜表面光斑中心的温度场、径向温度场和轴向温度场分布;同时给出不同能量密度下薄膜的轴向、径向和环向热应力分布。并对激光辐照薄膜元件产生的温度场、热应力场进行了分析,阐明了原因。  相似文献   

12.
对电子束蒸发方式镀制的HfO2/SiO2反射膜采用大口径激光进行辐照,采用激光量热计测量了激光辐射前后的弱吸收值。实验发现HfO2/SiO2反射膜在分别采用1 064 nm和532 nm的激光辐照前后薄膜吸收分别从5.4%和1.7%降低到1.4和1.2%。采用聚焦离子束技术分析了激光辐照后薄膜的损伤形态并探究了损伤原因,发现:薄膜在激光辐照下存在节瘤的地方容易出现薄膜损伤,具体表现为熔融、部分喷发、完全脱落3种形态,节瘤缺陷种子来源的差异是导致其损伤机理也存在着巨大差异的主要原因。同时这些节瘤缺陷种子来源也影响着激光预处理作用效果,激光预处理技术对于祛除位于基底上种子形成的节瘤是有效的,原因是激光辐射过后该节瘤进行了预喷发而不会对后续激光产生影响;而激光预处理技术对位于膜层中间的可能是镀膜过程中材料飞溅引起的缺陷是无效的,需要通过飞秒激光手段对该类节瘤进行祛除。  相似文献   

13.
采用1.06 μm单脉冲激光在不同能量密度下辐照特殊光电系统中典型薄膜光学元件,理论分析了激光辐照薄膜元件产生的温度场和热应力场,在此基础上建立了激光辐照多层薄膜的物理模型,计算软件使用ANSYS软件的热分析模块对激光辐照薄膜元件产生的温度场和热应力场进行了模拟,分别给出不同激光能量密度下薄膜表面光斑中心的温度场、径向温度场和轴向温度场分布;同时给出不同能量密度下薄膜的轴向、径向和环向热应力分布。并对激光辐照薄膜元件产生的温度场、热应力场进行了分析,阐明了原因。  相似文献   

14.
We report on μμ Hall probe measurements on single crystals of 2H–NbS2. This compound is the only superconducting 2H-dichalcogenide which does not develop a charge density wave. At low temperature and low magnetic field, a Bean profile is observed, allowing to evaluate the critical current. Moreover, the anisotropy and temperature dependence of the first critical field in 2H–NbS2 was measured down to 1.2 K. A linear temperature dependence of the first penetration field is clearly observed. The absolute magnetic penetration depth is found to be 83 nm which is slightly reduced compared to the iso-structural compound 2H–NbSe2.  相似文献   

15.
16.
We report an efficient process for preparing monodisperse SiO2@Y0.95Eu0.05VO4 core–shell phosphors using a simple citrate sol–gel method and without the use of surface-coupling silane agents or large stabilizers. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and photoluminescence (PL) spectra were used to characterize the resulting SiO2@Y0.95Eu0.05VO4 core–shell phosphors. The XRD results demonstrate that the Y0.95Eu0.05VO4 particles crystallization on the surface of SiO2 annealing at 800 °C is perfectly and the crystallinity increases with raising the annealing temperature. The obtained core–shell phosphors have a near perfect spherical shape with narrow size distribution (average size ca. 500 nm and an average thickness of ~50 nm), are not agglomerated, and have a smooth surface. The thickness of the YVO4:Eu3+ shells on the SiO2 cores could be easily tailored by changing the mass ratio of shell to core (W = [YVO4]/[SiO2]) (~50 nm for W = 30%). The Eu3+ shows a strong PL luminescence (dominated by 5D0 − 7F2 red emission at 618 nm) under the excitation of 320 nm UV light. The PL intensity of Eu3+ increases with increasing the annealing temperature and the values of W.  相似文献   

17.
A series of FeCo–SiO2 nanogranular films were prepared using magnetron controlled sputtering method. The microstructure, tunneling giant magnetoresistance (TMR) and magnetic properties of FeCo–SiO2 films deposited at room temperature and then annealed at various temperatures were investigated using transmission electron microscopy (TEM), conventional four probes method and vibrated sample magnetometer (VSM) under room temperature, respectively. The results showed that all FeCo–SiO2 films consisted of FeCo granules with equiaxial shape uniformly dispersed in the SiO2 matrix and formed body-centered cubic (bcc) structure. With increasing the annealing temperature, FeCo granule size increased monotonically. For film with 30.5 vol% FeCo, the size distribution satisfied the log-normal function at lower annealing temperature. While with increasing annealing temperature, the size distribution deviated gradually from the log-normal function. Meanwhile, upon varying the annealing temperature, the TMR of films with lower volume fraction reached a peak value at higher annealing temperature and the TMR of films with higher volume fraction reached a peak value at lower annealing temperature. In addition, the results also indicated that the sensitivity of TMR changed non-monotonically with the increment of the annealing temperature and both the saturation magnetization and the susceptibility of FeCo (30.5 vol%)–SiO2 films increased with increasing the annealing temperature.  相似文献   

18.
采用不同的光斑移动距离,对电子束蒸发制备的HfO2/SiO2多层高反膜进行了单步及多步预处理。结果表明:为了使薄膜不产生损伤,预处理最高能量密度最好不超过薄膜零几率损伤阈值的90%; 相同预处理效率下进行的单步预处理对提高光学薄膜抗激光损伤阈值的效果比多步预处理好;对HfO2/SiO2高反膜进行98.4%能量覆盖的两步预处理后薄膜损伤阈值提高81%;控制薄膜的缺陷源,初始物质应采用金属Hf。  相似文献   

19.
The TiO2–SiO2 thin film was prepared by self-assembly method by mixing SiO2 precursor with titanium precursor solution and aged to obtain a co-precipitation of silica and titanium crystals. Dip coating method was applied for thin film preparation on glass slide. The X-ray diffraction (XRD) of the self-assembly thin film had no characteristic property of SiO2 and even anatase TiO2 but indicated new crystal structure which was determined from the Fourier Transform Infrared Spectrophotometer (FTIR) as a hybridized Ti–O–Si bonding. The surface area and surface volume of the self-assembly sample were increased when SiO2 was incorporated into the film. The self-assembly TiO2–SiO2 thin film exhibited the enhanced photocatalytic decolorization of methylene blue (MB) dye. The advantages of SiO2 are; (1) to increase the adsorbability of the film and (2) to provide the hydroxyl radical to promote the photocatalytic reaction. The self-assembly thin film with the optimum molar ratio (SiO2:TiO2) as 20:80 gave the best performance for photocatalytic decolorization of MB dye with the overall efficiency of 81%.  相似文献   

20.
The ab initio numerical calculations of the electronic structure of simple oxides BeO and SiO2 and complex oxides Be2SiO4 and Be2Si x Ge1 − x O4 with the phenacite structure have been performed using the electron density functional theory. The calculations indicate that the main feature of the systems under investigation is the presence of oxygen states in both the valence and conduction bands. The splitting of the bottom of the conduction band has been revealed in the electronic structure of the Be2Si x Ge1 − x O4 system. The splitting width is about 1.5 eV. The main contribution to the formation of a narrow subband of the conduction band comes from the 2s and 2p states of oxygen and the 4d state of germanium. Microscopic models of the spatial localization of the electron density on lower energy states of the conduction band of oxide crystals have been developed using the Wannier function technique. The reflection spectra of BeO, SiO2, and Be2SiO4 have been analyzed. The reported calculations of the electronic structure imply the exciton nature of the 9.7-eV reflection peak in the Be2SiO4 crystal.  相似文献   

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