Analysis of Raman scattering of Ga1−xMnxAs dilute magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x=1.4-3.0%) grown on (1 0 0) GaAs substrates by molecular beam epitaxy were characterized using Raman spectroscopy. As Mn is introduced into GaAs, a marked increase in disorder in the material occurs, as indicated by the growth of the disorder-allowed transverse-optical Raman line. Another important result is that as the Mn concentration in Ga_1−xMn_xAs increases further beyond ca. 2%, Raman-active coupled-plasmon-longitudinal-optical phonon modes arise, which signals the increasing presence of holes, and thus provides a useful tool for determining their concentration. Using the depletion-layer approach from the Raman spectroscopy data, we determined the carrier concentration for samples with x=2.2% and 3.0% was to be 7.2×10¹⁹ and 8.3×10²⁰ cm⁻³, respectively.     

Magnetic behavior of the II-V-diluted magnetic semiconductor Cd1−xMnxSb

Polycrystalline samples of the II-V-diluted magnetic semiconductor Cd_1−xMn_xSb (x=0.05-0.20) were synthesized. Standard high temperature ceramic methods under an inert atmosphere were utilized for sample fabrication. Structural characterization was done using X-ray diffractometry (XRD), which indicated that a simple substitution of Mn for Cd is probably not occurring. Hysteresis, ac susceptibility, dc magnetization, and spontaneous magnetization measurements were performed for Cd_0.90Mn_0.10Sb. The hysteresis data indicated the presence of a ferromagnetic component. Ferromagnetism in the Cd_0.90Mn_0.10Sb system is likely due to two sources: Mn spins in small Mn-rich regions and a small amount of MnSb in a minority phase. Analysis of the spontaneous magnetization as a function of temperature for Cd_0.90Mn_0.10Sb yielded the value 0.172 for the critical exponent β. In MnSb, β was found to have the value 0.379, which is close to the theoretical value for 3D-Heisenberg systems. Thus, in Cd_0.90Mn_0.10Sb, the ferromagnetism is not of the 3D-Heisenberg type; rather, it is closer to 2D Ising behavior, indicating reduced effective dimensionality.     

Band-edge exciton transitions in (Ga1−xMnx)N diluted magnetic semiconductor films with above room temperature ferromagnetic transition

(Ga_1−xMn_x)N thin films grown on GaN buffer layers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors (DMSs) with band-edge exciton transitions for applications in optomagnetic devices. The magnetization curve as a function of the magnetic field at 5 K indicated that ferromagnetism existed in the (Ga_1−xMn_x)N thin films, and the magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature of the (Ga_1−xMn_x)N thin film was above room temperature. Photoluminescence and photoluminescence excitation spectra showed that band-edge exciton transitions in (Ga_1−xMn_x)N thin films appeared. These results indicate that the (Ga_1−xMn_x)N DMSs with a magnetic single phase hold promise for potential applications in spin optoelectronic devices in the blue region of the spectrum.     

Magnetic and electrical properties of new magnetic phase in Si1−xMnx crystals

We have investigated the magnetic and electrical transport properties of Si_1−xMn_x single crystals grown by the vertical Bridgman method. The alloys with Mn concentrations up to x=0.64 have weak ferromagnetic ordering around T_C∼30 K. However, Si_0.25Mn_0.75 alloys show weak ferromagnetic ordering at 70 K and antiferromagnetic ordering at 104 K, which is confirmed by magnetization and electrical transport studies.     

Photoluminescence investigation of ferromagnetic Ga1−xMnxN layers with GaN templates grown on sapphire (0 0 0 1) substrates

We have investigated the temperature and composition dependent photoluminescence (PL) spectra in Ga_1−xMn_xN layers (where x ≈ 0.1-0.8%) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. The efficient PL is peaked in the red (1.86 eV), yellow (2.34 eV), and blue (3.29 eV) spectral range. The band-gap energy of the Ga_1−xMn_xN layers decreased with increasing temperature and manganese composition. The band-gap energy of the Ga_1−xMn_xN layers was modeled by the Varshni equation and the parameters were determined to be α = 2.3 × 10⁻⁴, 2.7 × 10⁻⁴, 3.4 × 10⁻⁴ eV/K and β = 210, 210, and 230 K for the manganese composition x = 0.1%, 0.2%, and 0.8%, respectively. As the Mn concentration in the Ga_1−xMn_xN layers increased, the temperature dependence of the band-gap energy was clearly reduced.     

Growth and magnetism in amorphous Si1−xMnx thin films grown by thermal deposition

Si_1−xMn_x   (x?0.22$x?0.22$) thin films were grown by using a thermal evaporator, and their magnetic and electrical properties were investigated. The Si_1−xMn_x semiconductors are amorphous when Mn concentration is 9.0 at% and less. The electrical resistivities of amorphous Si_1−xMn_x   (x?0.09$x?0.09$) semiconductor thin films are in the range of 9.86–6.59×10⁻⁴ Ω cm at room temperature and decrease with increasing Mn concentration. The amorphous Si_1−xMn_x   (x?0.09$x?0.09$) semiconductor thin films are p-type and hole densities are 3.73×10¹⁸–1.33×10²² cm⁻³ at room temperature. Low temperature magnetization characteristics reveal that amorphous Si_1−xMn_x   (x?0.09$x?0.09$) semiconductor thin films are paramagnetic.     

Optical and magnetic properties of (Ga1−xMnx)N/GaN digital ferromagnetic heterostructures

(Ga_1−xMn_x)N/GaN digital ferromagnetic heterostructures (DFHs) and (Ga_1−xMn_x)N/GaN grown on GaN buffer layers by using molecular beam epitaxy have been investigated. The photoluminescence (PL) spectra showed band-edge exciton transitions. They also showed peaks corresponding to the neutral donor-bound exciton and the exciton transitions between the conduction band and the Mn acceptor, indicative of the Mn atoms acting as substitution. The magnetization curves as functions of the magnetic field at 5 K indicated that the saturation magnetic moment in the (Ga_1−xMn_x)N/GaN DFHs decreased with increasing Mn mole fraction and that the saturation magnetic moment and the coercive field in the (Ga_1−xMn_x)N/GaN DFHs were much larger than those in (Ga_1−xMn_x)N thin films. These results indicate that the (Ga_1−xMn_x)N/GaN DFHs hold promise for potential applications in spintronic devices.     

Preference orientation and magnetic properties of CoxFe3−xO4 nanocrystalline thin films on quartz substrate

Nanocrystalline spinel ferrite thin films of Co_xFe_3−xO₄ (x=0.3$x=0.3$, 0.5, 0.8, and 1.0) have been prepared by RF sputtering on quartz substrate without a buffer layer at room temperature and annealed at the temperature range from 200 to 600 °C in air. The as-sputtered films exhibit the preferred orientation and the high magnetization and coercivity. After annealing, the preferred orientations become poor, but the magnetization and coercivity increase. The sample with a magnetization of 455 emu/cm³, a coercivity of 2.8 kOe, a remanence ratio of 0.72, and a maximum energy product of 2.4 MGOe has been obtained. The influence of Co ions and annealing temperature on the magnetic properties has been discussed.     

Effect of indium incorporation in Zn1−xCoxO thin films

In the present paper, the preliminary investigations of a series of ZnO thin films co-doped with indium and cobalt with an objective to elucidate the correlation, if any, between the carrier concentration and the induced room temperature ferromagnetism (RTFM), are presented. The single-phasic (Zn_99.5In_0.5)_1−xCo_xO thin films are deposited by spray pyrolysis. The substitution of Zn²⁺ by Co²⁺ has been established by optical transmission analysis of these films. The films are ferromagnetic at room temperature; and the magnetization has higher value for indium and cobalt co-doped thin film as compared with Zn0₉₀Co_0.1O thin film (having no indium).     

Structural and magnetic properties of Mg(In2−xMnx)O4 system

We synthesized the Mn-doped Mg(In_2−xMn_x)O₄ oxides with 0.03?x?0.55 using a solid-state reaction method. The X-ray diffraction patterns of the samples were in a good agreement with that of a distorted orthorhombic spinel phase. Their lattice parameters and unit-cell volumes decrease with x due to the substitution of the smaller Mn³⁺ ions to the larger In³⁺ ions. The undoped MgIn₂O₄ oxide presents diamagnetic signals for 5 K?T?300 K. The M(H) at T=300 K reveals a fairly negative-sloped linear relationship. Neither magnetic hysteresis nor saturation behavior was observed in this parent sample. For the Mn-doped samples, however, positive magnetization were observed between 5 and 300 K even if the x value is as low as 0.03. The mass susceptibility enhances with Mn content and it reaches the highest value of 1.4×10⁻³ emu/g Oe (at T=300 K) at x=0.45. Furthermore, the Mn-doped oxides with x=0.06 and 0.2, respectively, exhibit nonlinear magnetization curves and small hysteretic loops in low magnetic fields. Susceptibilities of the Mn-doped samples are much higher than those of MnO₂, Mn₂O₃ oxides, and Mn metals. These results show that the oxides have potential to be magnetic semiconductors.     

Ferromagnetic semiconductor Ge1−x−ySnxMnyTe with phase transformation of ferroelectric type

It is expected that joint existence of ferromagnetic properties and ferroelectric structural phase transition in diluted magnetic semiconductors IV-VI leads to new possibilities of these materials. Temperature of ferroelectric transition for such crystals can be tuned by the change of Sn/Ge ratio. Magnetic susceptibility, Hall effect, resistivity and thermoelectric power of Ge_1−x−ySn_xMn_yTe single crystals grown by Bridgeman method (x=0.083-0.115; y=0.025-0.124) were investigated within 4.2-300 K. An existence of FM ordering at T_C∼50 K probably due to indirect exchange interaction between Mn ions via degenerated hole gas was revealed. A divergence of magnetic moment temperature dependences at T?T_C in field-cooled and zero-field-cooled regimes is obliged to magnetic clusters which are responsible for superparamagnetism at T>T_C≈T_f (freezing temperature) and become ferromagnetic at T_C arranging spin glass state at T<T_f≈T_C. Phase transition of ferroelectric type at T≈46 K was revealed. Anomalous Hall effect which allows to determine magnetic moment was observed.     

Magnetoresistive properties of Zn1−xCoxFe2O4 ferrites

The magnetic and magnetoresistive properties of spinel-type Zn_1−xCo_xFe₂O₄ (x=0, 0.2 and 0.4) ferrites are extensively investigated in this study. A large negative magnetoresistance (MR) effect is observed in Zn_1−xCo_xFe₂O₄ ferrites of spinel structure. These materials are either ferrimagnetic or paramagnetic at room temperature, and show a spin-(cluster) glass transition at low temperatures, depending on the chemical compositions. The MR curves as a function of magnetic fields, MR(H), are parabolic at all temperatures for paramagnetic polycrystalline ZnFe₂O₄. The MR for ZnFe₂O₄ at 110 K in the presence of 9 T applied magnetic field is 30%. On the other hand, MR(H) are linear for x=0.2 and 0.4 ferrimagnetic Zn_1−xCo_xFe₂O₄ samples up to 9 T. The MR effect is independent of the sintering temperatures, and can be explained with the help of the spin-dependent scattering and the Yafet–Kittel angle of Zn_1−xCo_xFe₂O₄ mixed ferrites.     

Magnetic and electrical properties of amorphous Ge1−xCrx thin films grown by low temperature vapor deposition

Amorphous Ge_1−xCr_x thin films are deposited on (1 0 0)Si by using a thermal evaporator. Amorphous phase is obtained when Cr concentration is lower than 30.7 at%. The electrical resistivities are 1.89×10⁻³–0.96×10² Ω cm at 300 K, and decrease with Cr concentration. The Ge_1−xCr_x thin films are p-type. The hole concentrations are 5×10¹⁶–7×10²¹ cm⁻³ at 300 K, and increase with Cr concentration. Magnetizations are 7.60–1.57 emu/cm³ at 5 K in the applied field of 2 T. The magnetizations decrease with Cr concentration and temperature. Magnetization characteristics show that the Ge_1−xCr_x thin films are paramagnetic.     

Ferromagnetism of epitaxially grown CaRu1−xMxO3 (M=Ti, Mn) films

Epitaxial thin films of CaRu_1−xM_xO₃ (M=Ti, Mn) were fabricated on a (0 0 1)-SrTiO₃ substrate by spin-coat method using organometallic solutions (metal alkoxides). Results of X-ray diffraction and transmission electron microscopy indicate that the epitaxial films were grown pseudomorphically so as to align the [0 0 l] axis of the CaRu_1−xM_xO₃ films perpendicular to the (0 0 1) plane of the SrTiO₃ substrate. Ferromagnetism and metal-insulator transition are induced by the substitution of transition metal ions. The occurrence of ferromagnetism was explained qualitatively assuming a TiRu₆ cluster model for CaRu_1−xTi_xO₃ film and a mixed valence model for CaRu_1−xMn_xO₃ film. Ferromagnetism was also observed for layered CaRuO₃/CaMnO₃ film and CaRuO₃/CaMnO₃/CaRuO₃/CaMnO₃ multilayer film and the magnetism was explained by an interfacial exchange interaction model with magnetic Mn³⁺, Mn⁴⁺, and Ru⁵⁺ ions.     

EPR study of the diluted magnetic semiconductor CuGa1−xMnxTe2

Electron paramagnetic resonance (EPR) experiments were made in the diluted magnetic semiconductor CuGa_1−xMn_xTe₂, in the temperature range 70<T<300 K. The samples were synthesized by direct fusion of stoichiometric mixtures of the elements, with Mn composition from x=0.0 to 0.25. The EPR spectra were measured as function of temperature, Mn composition, and field orientation. The temperature variation of the resonance field shows a critical point at about 235 K, and is associated with a transition from the ferromagnetic to the superparamagnetic state. The resonance field was also measured as a function of the field angle, and displays a well-defined uniaxial symmetry. This uniaxial field depends on the Mn concentration and is due to tetragonal distortions induced by Mn²⁺ at Ga sites, and the demagnetizing effects due to formation of ferromagnetism (FM) Mn-clusters.     

Structural and magnetic studies on mechanosynthesized BaFe12−xMnxO19

Barium hexaferrite powders with manganese substitution were prepared by mechanosynthesis. The structural and magnetic properties were characterized by X-ray diffractometer and vibration sample magnetometer, respectively. XRD patterns were refined by Rietveld method. Preferential site occupation of manganese ion was investigated by room temperature (RT) Mössbauer measurements. XRD results showed a single-phase barium hexaferrite with some residual hematite. Crystallite size was observed to decrease with substitution amount. Lower saturation magnetization and increased coercivity is observed in substituted samples. RT Mössbauer measurements showed that manganese ions preferentially occupy 12k, 4f₂, and 2a sites.     

Magnetic viscosity-coercivity relation for Fe1−xCox fine particles

The variation of the applied field results in a subsequent change of magnetization with time. There is a relationship between the coercivity (H_c), as the equilibrium characteristic of the system, and its magnetic stability (1/S), as a parameter characterizing the time dependence. 1/S as a function of H_c has been measured and studied for different Fe_1−xCo_x samples. We synthesized several samples with different values of x by applying various magnetic fields during the grains’ growth, and observed a linear relationship between 1/S and H_c.     

Magnetic and structural study of Cu-doped TiO2 thin films

Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO₂ thin films were grown by pulsed laser deposition technique on LaAlO₃ substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO₂. The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO₂.     

First-principles and Monte Carlo combinational study on Zn1−xCoxO diluted magnetic semiconductor

The electronic structures and magnetic properties of Zn_1−xCo_xO (x=5.55%,8.33%,12.5%) are studied using first-principles calculations in combination with Monte Carlo (MC) simulation. The combinational method makes possible a complete simulation from the microscopic magnetic interaction to macroscopic magnetic behavior. The calculated results from first principles indicate that the ferromagnetic ground state is stabilized by a half-metallic electronic structure which originates from the strong hybridization between Co 3d electrons and O 2p electrons. With the magnetic coupling strengths obtained from first-principles calculations, the MC simulation predicts the ferromagnetism of Zn_1−xCo_xO (x=5.55%,8.33%,12.5%) with , which is consistent with the experimental facts.     

Ferromagnetism in MnxGe1−x films prepared by magnetron sputtering

Mn_xGe_1−x thin films were prepared by magnetron sputtering with a substrate temperature of 673 K and subsequently annealed at 873 K. The X-ray diffraction (XRD) measurements showed that all samples had a single Ge cubic structure. No films showed clear magnetic domain structure under a magnetic force microscope (MFM). Atom force microscope (AFM) measurements showed that the films had an uniform particle size distribution, and a columnar growth pattern. X-ray photoelectron spectroscopy (XPS) measurements indicated that the valences of both Mn and Ge atoms increase with the Mn concentration. The resistance decreased with increasing temperature, suggesting that the films were typical semiconductors. Magnetic measurements carried out using a Physical Property Measurement System (PPMS) showed that all samples exhibited ferromagnetism at room temperature. There was a small concentration of Mn₁₁Ge₈ in the films, but the ferromagnetism was mainly induced by Mn substitution for Ge site.