Fluorination of perovskite-related phases of composition La1−xSrxFe1−yCoyO3−δ

We report here on the fluorination of the perovskite-related phases La_1−xSr_xFe_1−yCo_yO_3−δ. The introduction of fluorine in place of oxygen is achieved through a low-temperature (400 °C) reaction with poly(vinylidene fluoride). X-ray powder diffraction data show that in all cases the fluorination leads to an expansion in the unit cell, which is consistent with partial replacement of oxygen by fluorine and consequent reduction in the oxidation state of iron and/or cobalt. This reduction in oxidation state is confirmed by X-ray absorption- and Mössbauer-spectroscopy. The Mössbauer spectra show complex magnetically split hyperfine patterns for the fluorinated samples, reflecting the interactions between Fe³⁺ ions, which are not possible in oxides containing Fe⁴⁺.     

Low-temperature synthesis of nanocrystalline Ca1−xHoxMnO3−δ (0?x?0.3) powders

Nanocrystalline Ca_1−xHo_xMnO_3−δ (0?x?0.3) manganites were synthesized as phase-pure by a simple and instantaneous solution autogel combustion method, which is a low temperature initiated synthetic route to obtain fine grain size. All the samples, heated at 800 °C for 18 h, can be produced as phase-pure; the polycrystalline powders are homogeneous and possess ultrafine particle size. The holmium-doped calcium manganites retain the orthorhombic phase of the undoped sample. The scanning electron microscope (SEM) images revealed that the combustion-derived compounds exhibit particle size that decreases with holmium content from 300 to 80 nm. All manganites show two active IR vibrational modes near 400 and 600 cm⁻¹. The high temperature dependence of resistivity was measured using a standard four-probe method in the range 25-600 °C. All the samples exhibit semiconductor behaviour and holmium induces a marked decrease in the electrical resistivity when compared with the parent CaMnO₃. The results can be well attributed to the Mn⁴⁺/Mn³⁺ ratio and to the particle grain size.     

Glass transition behavior of binary GaxSe100−x (0?x?10) glass systems

The glass transition behavior of glassy Ga_xSe_100−x (x=0, 2.5, 5, 7.5 and 10) systems were investigated using differential scanning calorimetry (DSC). The variation of glass transition temperature, T_g, with Ga concentration has been studied. The value of activation energy of glass transition, E_g, has been found to increase with increase in Ga content. This increase in E_g has been explained in terms of the average heat of atomization for these glasses.     

Structure and magnetic properties of magnetostrictive compounds Tb0.36Dy0.64(Fe0.85Co0.15)2−xBx (0⩽x⩽0.15)

Crystal structure and magnetic properties of magnetostrictive compounds Tb_0.36Dy_0.64(Fe_0.85Co_0.15)_2−xB_x (0?x?0.15) have been investigated at room temperature. The matrix of these compounds keeps a cubic MgCu₂-type structure. Lattice parameter a of the Laves phase decreases to reach a minimum at x=0.10, then increases with increasing boron content. Through analyzing the Mössbauer spectra, the easy magnetization direction (EMD) for all samples is confirmed to lie along 〈111〉 direction at room temperature, suggesting the presence of the giant magnetostriction. The mean hyperfine field H_hf and the deduced iron moment μ_Fe increase with increasing boron content, resulting in the enhancement of both Curie temperature T_C and spin reorientation temperature T_r. Although the addition of B enlarges the magnetocrystalline anisotropy constant K₁, the composition dependence of the ratio λ/K₁ for Tb_0.36Dy_0.64(Fe_0.85Co_0.15)_2−xB_x, however, reaches a maximum value at x=0. 05 under high magnetic fields.     

Influence of the concentration in Fe-doped BaTiO3 on magnetoelectric couping of layered composites BaTi1−xFexO3–Tb1−yDyyFe2−z

Perovskites BaTi_1−xFe_xO₃ has been synthesized with the concentration x ranging from 0.01 to 0.02. Their transformation point of ferroelectric to paraelectric and the corresponding latent heat of the phase transformation were observed to decrease with increasing the doping level of Fe³⁺. Bonded layered composites BaTi_1−xFe_xO₃–Tb_1−yDy_yFe_2−z have been fabricated and their magnetoelectric effect has been investigated. The sample containing a layer of perovskite BaTi_0.985Fe_0.015O₃ was found to show the maximum transverse ME voltage coefficient, which is about 1422 mV Oe⁻¹ cm⁻¹ under a magnetic field of 1580 Oe, in these bilayers. Analysis shows that the Fe-doped BaTiO₃ with doping level at about 1.5% should have largest piezoelectric coefficient in these ceramics BaTi_1−xFe_xO₃.     

Magnetic properties,microstructure, and phase evolution of PrxFebal.TiyB20−x (x=4–9; y=2.5–5) nanocomposites

Magnetic properties, microstructure, and phase evolution of Pr lean and boron-enriched Pr_xFe_bal.Ti_yB_20−x (x=4–9; y=2.5–5) melt-spinning ribbons with nanostructures have been investigated. Based on thermal magnetic analysis (TMA), for y=2.5, two phases, namely Pr₂Fe₁₄B and α-Fe, were found for ribbons with x=9, while additional two metastable phases, Pr₂Fe₂₃B₃ and Fe₃B, existed for x=4, 7 and 8. With the decrease of Pr content, the remanence increases but coercivity decreases. The optimal properties of B_r=9.5 kG, _iH_c=10.7 kOe, and (BH)_max=17.8 MG Oe are achieved in Pr₉Fe_bal.Ti_2.5B₁₁ nanocomposites. On the other hand, higher Ti substitution for Fe in Pr₇Fe_bal.Ti_yB₁₃ ribbons could refine the grain size and suppress the metastable Pr₂Fe₂₃B₃ and Fe₃B phases effectively. The excellent permanent magnetic properties are mainly dominated by the nanoscaled microstructures and the coexistence of sufficient magnetically soft phases, Fe₃B, Pr₂Fe₂₃B₃ and α-Fe, with magnetically hard Pr₂Fe₁₄B phase.     

High-temperature electronic transport properties of La1−xCaxMnO3+δ (0.0?x?1.0)

La_1−xCa_xMnO_3+δ (0.0?x?1.0) samples were prepared and their resistivity and Seebeck coefficients were measured in the high-temperature range. Ca doping changes the ratio of Mn³⁺/Mn⁴⁺ and influences the electronic transport behavior markedly. With the increase of Ca concentration, the samples change from a p-type semiconductor to an n-type one and Seebeck coefficient becomes increasingly negative. Low doping (x=0.2) and high doping (x=0.8) induces the drop of the resistivity compared with undoped LaMnO_3+δ and CaMnO_3+δ samples due to the rise of carrier concentration. However, the resistivity of moderate-doped samples (x=0.4, 0.6) is larger than low- and high-doped samples because dopant scattering decreases carrier mobility.     

Structural and magnetic properties of Zn1−xCoxO (0<x⩽0.30) nanoparticles

We present a systematic investigation on the structural and magnetic properties of Zn_1−xCo_xO nanoparticles synthesized by an auto-combustion method. The single-phase Zn_1−xCo_xO crystallize in the wurtzite-type structure with a homogeneity range as large as x≈0.30, which enables the observation of some anomalies. The lattice parameter a and the unit cell volume V increase with the Co content, and anomalies are discernable around x=0.15 on the a−x and V−x curves. The magnetization data show no evidence of ferromagnetic (FM) ordering in our samples down to T=5 K, and the magnetization at 5 K and 5 T exhibits a maximum around x=0.125. Based on the detailed analysis of the magnetization data and the donor impurity band exchange model, the anomalies on composition dependence of both the lattice parameters and magnetization can be associated with an occurrence of cation percolation around the threshold x_p (≈1.5/Z=0.125 for three-dimensional lattice with coordination number Z=12). Within the framework of the donor impurity band exchange model, the absence of FM in the well-characterized Zn_1−xCo_xO can be attributed to insufficient donor electron concentration.     

Heterogeneous magnetic and electronic states in Ca1−xLaxMnO3−δ (x⩽0.12) single crystals with electron doping

The magnetic, transport, and optical properties of electron-doped Ca_1−xLa_xMnO_3−δ single crystals with x  ?0.12 were studied. The magnetic measurements show that in single crystals with x=0$x=0$ and 0.05 the G-type AFM phase with weak FM component is realized and in crystals with x=0.10$x=0.10$ and 0.12 the G- and C-type AFM phases coexist. The C-type magnetic structure arises at less concentration of La than in polycrystalline samples as a result of oxygen vacancies being additional source of electrons. Under magnetic transitions in the G- and C-type phases, resistivity and magnetoresistance of the doped single crystals have anomalies. Optical absorption in IR range indicates formation of a charge gap in crystals with x=0.10$x=0.10$ and 0.12 at appearance of the C-AFM and monoclinic phase with orbital/charge ordering. By comparing optical and transport properties, heterogeneous electronic state and its relation with heterogeneous magnetic state are shown.     

Structural,magnetic, and transport properties in La(2+4x)/3Sr(1−4x)/3Mn1−xCuxO3 (0⩽x⩽0.20) system

A series of the double-doping samples La_(2+4x)/3Sr_(1−4x)/3Mn_1−xCu_xO₃(0?x?0.2)$(0?x?0.2)$ with the Mn³⁺/Mn⁴⁺ ratio fixed at 2:1 have been prepared. The structural, magnetic, transport properties and magnetoresistance of the series samples have been investigated. It is found that no apparent crystal structure change is introduced by Cu doping up to x=0.20$x=0.20$. But the Curie temperature _TC$T_{\mathrm{C}}$ and magnetization M   are strongly affected by Cu substitution. A remarkable magnetotransport behavior, characterized by double bumps, is observed, and an obvious low-temperature upturn is found in the range of 0.07?x?0.12$0.07?x?0.12$. As a result, the temperature range of colossal magnetoresistance (CMR) is greatly broadened. Moreover, it is found that the room temperature magnetoresistance (MR) of double-doping samples is obviously larger that the undoped La_2/3Sr_1/3Mn_1−xCu_xO₃ at 300 K, which can give a guide for the adequate selection of the room temperature CMR materials.     

Electrical and switching properties of the Se90Te10−xAgx (0?x?6) films

Amorphous Se₉₀Te_10−xAg_x (0?x?6) films are obtained by thermal evaporation technique under vacuum from the synthesized bulk materials on pyrographite and glass substrates. X-ray analysis shows the amorphous nature of the obtained films. The dc electrical conductivity was studied for different thicknesses (165-711 nm) as a function of temperature in the range (298-323 K) below the corresponding T_g for the studied films. The obtained results show that the conduction activation energy has a single value through the investigated range of temperature which can be explained in accordance with Mott and Davis model. The I-V characteristic curves for the film compositions are found to be typical for a memory switch. The mean value of the threshold voltage increases linearly with increasing film thickness (165-711 nm), while it decreases exponentially with increasing temperature in the investigated range for the studied compositions. The results are explained in accordance with the electrothermal model for the switching process. The effect of Ag on the studied parameters is also investigated.     

Magnetostriction of TbxHo0.75−xPr0.25(Fe0.9B0.1)2 (x=0–0.3) compounds

The Tb_xHo_0.75−xPr_0.25(Fe_0.9B_0.1)₂ (x=0, 0.1, 0.15, 0.2, 0.25, and 0.3) compounds are found to stabilize in a cubic Laves phase structure. The lattice parameter, magnetostriction (at 10 kOe), and Curie temperature are found to increase with increasing Tb content. The compound with x=0.15 exhibits a possible anisotropy compensation between the Tb and (Ho/Pr) sublattices. The easy magnetization direction rotates towards the 〈1 1 1〉 from the 〈1 0 0〉 direction, with increasing Tb content. The splitting of the (4 4 0) peak accompanied by the spontaneous magnetostriction-induced rhombohedral distortion is observed for compounds with x?0.15 and the spontaneous magnetostriction (λ_1 1 1) is found to increase with Tb content.     

Synthesis,structural, dielectric and magnetic properties of spinel structure of Ca2+ substitute in Cobalt ferrites (Co1−xCaxFe2O4)

Non magnetic material Ca²⁺ as a substitute in Cobalt ferrite (Co_1?xCa_xFe₂O₄x?=?0.00, 0.05, 0.10 & 0.15) is prepared by self auto combustion method. The synthesized samples were carried out for various characterizations such as X-ray diffraction, Field emission scanning electron microscope (FE-SEM), Dielectric measurement and Magnetic property. X-ray diffraction reveals the values of crystalline size, lattice parameter and x-ray density by using the standard formula. The saturation magnetization (M_s) decreases from 63.92 to 43.17 emu/g for x?=?0.00 to 0.15 and the coercivity (H_c) increases gradually from 819.85 to 1312.32?Oe with the increase in Ca²⁺ concentration. The dielectric properties of synthesized nano materials were carried out at room temperature. The dielectric parameters such as tangent loss, Cole–Cole plot (Impedance, Modulus), and AC Conductivity were determined for various Ca²⁺ concentration. The frequency dependent dielectric dispersion behaviour of all the samples can be explained by the Maxwell–Wagner two-layer model along with Koop's phenomenological theory. As a result, Ca²⁺ substituted Cobalt ferrite is enhanced with their dielectric and magnetic property which is suitable for a memory device, recording media application and high frequency device.     

Photoluminescence of Eu-doped CaMgSi2xO6+2x (1.00?x?1.20) phosphors in UV-VUV region

Alkaline-earth silicate phosphors CaMgSi_2xO_6+2x:Eu²⁺ (1.00?x?1.20) were prepared by traditional solid-state reaction. The phosphors showed an intense blue emission centered around 453 nm, with both 254 and 147 nm excitations. The host absorption below 200 nm in the excitation spectra consisted of two bands around 160 and 190 nm. The band around 160 nm was ascertained to be associated with the SiO₄-tetrahedra and MgO₆-polyhedra, and that around 190 nm was due to the CaO₈-polyhedra or some impurities. The incorporation of excess Si of less than 15% would not lead to formation of impurities and the results indicated that an appropriate Si excess could improve the Photoluminescence (PL) intensity in both ultraviolet (UV) and vacuum ultraviolet (VUV) regions     

Non-adiabatic polaron hopping conduction in CaMn1−xCrxO3 (0?x?0.3)

DC electrical conductivity (σ_dc) of electron-doped antiferromagnetic CaMn_1−xCr_xO₃ (0?x?0.3) has been discussed elaborately in the light of polaron hopping conduction. The increase in Cr doping concentration increases the conductivity and decreases the activation energy. Non-adiabatic polaron hopping conduction is observed in all the manganites at high temperatures. The analysis of σ_dc data shows that small polarons are formed at lower concentrations (?5%) of Cr doping and undoped samples. However, large polarons are materialized at higher doping (?10%) concentrations. This is consistent with the fact that doped Cr³⁺ has larger ionic size compared to that of Mn⁴⁺. Again, strong electron-phonon (e-ph) interaction is perceived in undoped and 5% Cr-doped samples but not in manganites with larger doping concentration. This also confirms the formation of larger polarons with the increase of x. Mott's variable range hopping (VRH) model can elucidate the dc conductivity at very low temperatures. It has been detected that single phonon-assisted hopping is responsible for the dc conduction in the Cr-doped CaMnO₃ manganites.     

Structures, magnetic properties, and magnetocaloric effect in MnCo1−xGe (0.02?x?0.2) compounds

The crystalline structures, magnetic properties and magnetocaloric effect (MCE) of MnCo_1−xGe alloys (0.02?x?0.2) have been reported. The crystalline structures of MnCo_1−xGe (x?0.06) alloys are mainly of TiNiSi-type phase, and Ni₂In-type structure dominates for x>0.06. With decreasing Co concentrations the saturated magnetization of these compounds decreases. Large low-field magnetic entropy change −ΔS_M of about 2.3 J/kg K in MnCo_0.94Ge alloy has been obtained for a magnetic field change of 1 T. Moreover, it is found that TiNiSi-type phase exhibits larger −ΔS_M than Ni₂In-type one. For MnCo_0.94Ge alloy, considerable low-field refrigerant capacity (RC) (∼460 mJ/cm³), low coercivity and easy synthesis make these alloys potential candidates for near-room temperature magnetic refrigerants.     

Hall effect and sign reversal in Gd(Ba2−xNdx)Cu3O7+δ

We have investigated the Hall measurement of Gd(Ba_2−xNd_x)Cu₃O_7+δ with x=0, 0.05, 0.1, 0.15, and 0.2 in a magnetic field of 0–1 T. The nominal samples has been prepared by the conventional solid-state reaction technique. The iodometric titration experiment was carried out for samples. The Rietveld analysis of the X-ray diffraction patterns indicates that samples are mainly single phase. The normal state Hall coefficient behaves as 1/T in all samples. All samples with nominal compositions show single sign reversal with variation of magnetic field and temperature. The Hall resistivity of the samples with x=0 and 0.1 close to the superconducting transition temperature changes its sign with decreasing temperature and tends to a minimum −Δ_max, and then monotonically goes to zero. The absolute value of −Δ_max decreases with the increase of magnetic field. This can be qualitatively explained by a model calculation based on the time-dependent Ginsburg–Landau theory.     

Structural investigation of the BaSnO3–YBa2Cu3O7−x system

We report the microstructure change of BaSnO₃ (BSO)–YBa₂Cu₃O_7−x (YBCO) thin film system grown on SrTiO₃ single crystal substrates by pulsed laser deposition with using the “surface-modified-target” and “mixture-target” methods. Although it was confirmed that the thick BSO nanorods incorporated to YBCO films act as strong artificial pinning centers, the formation mechanism of the nanorods is still unclear. The purpose of this work is to extend the structural investigation to higher contents of BSO (up to 71 vol.%) in order to enlighten the relationship among interfacial energy, morphology and pinning performance in binary BSO–YBCO films.