Structure and mechanical properties of titanium nitride/carbon nitride multilayers

The structure and mechanical properties of the multilayers consisting of 5-73 nm thick titanium nitride (TiN) and 4.6 nm thick carbon nitride (CN) have been investigated. It has been found that the CN layers are amorphous and the TiN layers thinner than 17 nm are amorphous. The TiN layers become crystallized as the thickness is increased to 30 nm or thicker. The hardness from the composite response of the multilayered films and their substrates determined using continuous stiff measurement is smaller than the film-only hardness (without substrate effects) calculated using Bhattacharya-Nix empirical equation. The hardness increases with raising the thickness of TiN layers. With the crystallization of the TiN layer, the multilayers become even harder than that calculated based on the rule of mixtures. However, no enhancement in hardness has been observed when the TiN layers are amorphous.     

Structural, electrical and piezoelectric properties of LiNbO3 thin films for surface acoustic wave resonators applications

In this work, 0.30 μm thick LiNbO₃ layers have been deposited by sputtering on nanocrystalline diamond/Si and platinised Si substrates. The films were then analyzed in terms of their structural and optical properties. Crystalline orientations along the (0 1 2), (1 0 4) and (1 1 0) axes have been detected after thermal treatment at 500 °C in air. The films were near-stoichiometric and did not reveal strong losses or diffusion in lithium during deposition or after thermal annealing. Pronounced decrease of the roughness on top of the LiNbO₃ layer and at the interface between LiNbO₃ and diamond was also observed after annealing, compared to the bare nanocrystalline diamond on Si substrate. Furthermore, ellipsometry analysis showed a better density and a reduced thickness of the surface layer after post-deposition annealing. The dielectric constant and losses have been measured to 50 and less than 3.5%, respectively, for metal/insulator/metal structures with 0.30 μm thick LiNbO₃ layer. The piezoelectric coefficient d₃₃ was found to be 7.1 pm/V. Finally, we succeeded in switching local domain under various positive and negative voltages.     

Effect of pulse electrodeposition parameters on the properties of Ni/nano-SiC composites

Pure nickel and nickel matrix composite deposits containing nano-SiC particles were produced under both direct and pulse current conditions from an additive-free nickel Watts’ type bath. It has been proved that composite electrodeposits prepared under pulse plating conditions exhibited higher incorporation percentages than those obtained under direct plating conditions, especially at low duty cycles. The study of the textural perfection of the deposits revealed that the presence of nano-particles led to the worsening of the quality of the observed [1 0 0] preferred orientation. Composites with high concentration of embedded particles exhibited a mixed crystal orientation through [1 0 0] and [2 1 1] axes. The embedding SiC nano-particles in the metallic matrix by an intra-crystalline mechanism resulted in the production of composite deposits with smaller crystallite sizes and more structural defects than those of pure Ni deposits. A dispersion-hardening effect was revealed for composite coatings independently from applied current conditions. Pulse electrodeposition significantly improved the hardness of the Ni/SiC composite deposits, mainly at low duty cycle and frequency of imposed current pulses.     

InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source

Lattice-matched InGaP epilayers on GaAs (001) and InGaP/GaAs heterojunction bipolar transistors (HBTs) were successfully grown by solid-source molecular beam epitaxy (SSMBE) with a GaP decomposition source. A 3 μm thick InGaP epilayer shows that low temperature photoluminescence (PL) peak energy is as large as 1.998 eV, full width at half maximum (FWHM) is 5.26 meV, which is the smallest ever reported, and X-ray diffraction (XRD) rocking curve linewidth is as narrow as that of GaAs substrate. The electron mobilities at room temperature of nominally undoped InGaP layers obtained by Hall measurements are comparable to similar InGaP epilayer grown by solid-source molecular beam epitaxy (SSMBE) with other sources or other growth techniques. The large area InGaP/GaAs HBTs show very good Dc characteristics.     

Investigation of a biofunctional polymeric coating deposited onto silicon microcantilevers

The paper deals with an appealing route to activate silicon microcantilevers (90, 110 and 130 μm long, 35 μm wide and 2 μm thick) for specific binding of biochemical species. The method consists in coating the underivatized microcantilevers with a biofunctional copolymer (based on N,N-dimethylacrylamide bearing silanating moieties) that was developed for low-density microarray assays on microscope glass slides. Coating deposition was obtained by dip-coating and its microstructure investigated by analyzing the resonance frequency values of bare and coated microcantilevers, by SEM and SFM imaging, SFM tip-scratch tests and XRR experiments. Results indicate that the coating is 2.5 nm thick and has a density of 1.22 g/cm³. The coating surface is nanostructured, displaying nanoblobs, which are from few up to 20 nm wide and, on average, 1.6 nm high. The diameter of the biggest nanoblobs is of the same order of magnitude of the gyration radius of the copolymer chains, suggesting that nanoblobs may identify individual macromolecules.     

Preparation, characterization and microwave absorption properties of electroless Ni-Co-P-coated SiC powder

Silicon carbide particles reinforced nickel-cobalt-phosphorus matrix composite coatings were prepared by two-step electroless plating process (pre-treatment of sensitizing and subsequent plating) for the application to lightweight microwave absorbers, which were characterized by scanning electron microscopy (SEM), X-ray diffraction analysis (XRD), vibrating sample magnetometer (VSM) and vector network analyzer, respectively. The results show that Ni-Co-P deposits are uniform and mixture crystalline of α-Co and Ni₃P and exhibit low-specific saturation magnetization and low coercivity. Due to the conductive and ferromagnetic behavior of the Ni-Co thin films, high dielectric constant and magnetic loss can be obtained in the microwave frequencies. The maximum microwave loss of the composite powder less than −32 dB was found at the frequency of 6.30 GHz with a thickness of 2.5 mm when the initial atomic ratio of Ni-Co in the plating bath is 1.5.     

Pre-annealing and magnetic induction in inhibitor-free 3% Si–Fe strips

Effects of pre-annealing and hydrogen flow rate on final texture and magnetic induction have been investigated in inhibitor-free 100 μm thick 3% Si–Fe strips containing 18 ppm sulfur. Without any pre-annealing, the strip showed a low magnetic induction, due to various {1 1 0}, {1 0 0} and {1 1 1} final texture components. The number and the area fraction of {1 1 0} grains increased with increasing pre-annealing temperature and hydrogen flow rate. A pre-annealing temperature range that results in the sharp {1 1 0} 〈0 0 1〉 texture is observed, depending on the hydrogen flow rate.     

Effects of the sputtering time of ZnO buffer layer on the quality of GaN thin films

ZnO thin films with different thickness (the sputtering time of ZnO buffer layers was 10 min, 15 min, 20 min, and 25 min, respectively) were first prepared on Si substrates using radio frequency magnetron sputtering system and then the samples were annealed at 900 °C in oxygen ambient. Subsequently, a GaN epilayer about 500 nm thick was deposited on ZnO buffer layer. The GaN/ZnO films were annealed in NH₃ ambient at 950 °C. X-ray diffraction (XRD), atom force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to analyze the structure, morphology, composition and optical properties of GaN films. The results show that their properties are investigated particularly as a function of the sputtering time of ZnO layers. For the better growth of GaN films, the optimal sputtering time is 15 min.     

Characterization and structure study of the anodic oxide film on Zircaloy-4 synthesized using NaOH electrolytes at room temperature

Thick crystalline zirconium oxide films were synthesized on Zircaloy-4 substrates by anodic oxidation at room temperature in NaOH solution with a stable applied voltage (300 V). The film is approximately 4.7 μm in thickness. The XPS and SEM analysis shows that the film is a three-layer structure in water, hydroxide and oxide parts. The thickness of that order is ∼0.01 μm, ∼1 μm, ∼3.7 μm, respectively. The oxide layer is composed of tetragonal and monoclinic phases with the volume ratio about 0.2. Furthermore, the thick anodic film acts as a barrier to oxygen and zirconium migrations. It effectively protects zirconium alloys against the worse corrosion. An extremely low passive current density of ∼0.018 μA/cm² and a low oxidation weight gain of ∼0.411 mg/cm² were also observed in the films.     

Fiber laser annealing of nanocrystalline PZT thick film prepared by aerosol deposition

Nanocrystalline PZT thick films (1 mm square and over 10 μm thick) directly deposited onto stainless-steel substrates (PZT/SUS) by aerosol deposition (AD) technique and then annealed using focused laser beam with a fiber laser to suppress thermal damage to the back sides of the PZT/SUS and substrate near the film edge and to retain the dielectric and/or ferroelectric properties of the PZT/SUS. Compared with CO₂ laser annealing, fiber laser annealing suppressed thermal damage to the substrate. Compared with PZT/SUS annealed at 600 °C using an electric furnace, PZT/SUS annealed at 600 °C using a fiber laser showed superior properties, namely, dielectric constant ? > 1200 at a frequency of 100 Hz, remanent polarization P_r > 30 μC/cm², and coercive field strength E_c < 50 kV/cm at a frequency of 10 Hz. Furthermore, the grain growth for the PZT/SUS formed by AD technique and annealed by fiber laser irradiation was occurred within the laser spot size.     

A new generation of CMOS-compatible high frequency micro-inductors with ferromagnetic cores: Theory,fabrication and characterisation

A new generation of CMOS-compatible micro-inductor prototypes with magnetic cores were realized, characterised as well as theoretically modelled in a frequency range up to 4 GHz, a frequency range where, e.g., mobile communication and global positioning systems (GPS) are operated. The micro-inductor's electrical magnitudes like inductance (L) and quality factor (Q) were theoretically described by means of an equivalent circuit model taking the frequency behaviour of the magnetic film core, expressed by the Landau-Lifschitz and Maxwell equations, into account. Six inch targets were used to deposit metallic layers (Al₉₉Si_0.5Cu_0.5), diffusion barriers (Si₃N₄), insulating layers (SiO₂) and magnetic films (Fe₃₉Co₃₀Ta₈N₂₃) by DC or reactive r.-f.-magnetron sputtering. All film materials were patterned by NUV-lithography (Near Ultra Violet), plasma beam milling and reactive ion etching to form the micro-inductors on 4-inch silicon wafers. The inductor windings are arranged in a way that they possess a low resistance and generate a quasi closed flux at the end of the cores to minimise eddy current losses in the silicon substrate. In order to diminish demagnetising effects in an efficient working core the magnetic films were patterned into micro squares with lateral dimensions of 20 and 100 μm with 100 nm in thickness. More magnetic volume and a higher micro-inductor cross-section was achieved by producing 100 nm magnetic double layers separated by a 800 nm thick Si₃N₄ inter-layer. To guarantee a sufficiently high cut-off frequency of the magnetic films, they were annealed in a static magnetic field at a temperature of 400 °C for uniaxial anisotropy induction. This represents a temperature treatment where aluminium CMOS processes take place. As a result of patterning, the magnetic film material exhibited a remarkable increase of the cut-off frequency from 2 GHz in laterally extended films up to 3.2 GHz which could be also observed in the measured frequency dependent inductance and quality factor. This was accompanied by an acceptable decrease of the initial permeability that still enabled initial inductances between 1 and 2 nH to be attained.     

Practical optical frequency measurement system around 1.5 μm based on an acetylene-stabilized laser-locked optical frequency comb

We have developed a practical and precise frequency measurement system at 1.5 μm telecommunication band. An electro-optic-modulator based optical frequency comb is phase-locked to a dither-free acetylene-stabilized laser to realize an optical frequency comb with frequency uncertainty of 10 kHz (5 × 10⁻¹¹) and the linewidth of 15 kHz. The present frequency comb can be also used as an optical frequency reference grid defined by ITU-T (International Telecommunication Union, Telecommunication Standardization Sector). Using the present frequency measurement system, we have demonstrated the first optical frequency measurement of ¹²C¹⁶O overtone absorption lines around 1.56 μm with the uncertainty of lower than 900 kHz.     

High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO₄ laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In_0.25Ga_0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 μm thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm thick laser crystal and a 1 mm thick laser crystal, respectively.     

Pulsed laser photodeposition of a-Se nanofilms by ArF laser

Pulsed laser photodeposition from amorphous selenium aqueous colloid solutions using ArF laser radiation at a wavelength of λ = 193 nm has been investigated. Nanometer thick layers were obtained on UV transparent silica substrates in contact with the solution for various photodeposition parameters. Amorphous Se layers, 20 nm thick, were obtained typically by 40 laser pulses of 30 ns duration with a fluence of 50 mJ/cm². Deposition thresholds for depositing 1 nm thick layers were as low as 5 pulses. The deposited nanometer thin surface morphology was analyzed by Evanescent Field Optical Microscopy, Scanning Electron Microscopy and Atomic Force Microscopy. The nanometer thicknesses were evaluated by utilizing the differential evanescent light pattern emanating from the substrates.     

Laser-generated surface acoustic waves in a ring-shaped waveguide resonator

Surface acoustic wave (SAW) waveguide resonator is formed by a ring-shaped strip of copper 10 μm wide and ∼130 μm in diameter embedded into a 0.8 μm thick layer of silica on a silicon wafer. SAWs are excited at one side of the copper ring by a short laser pulse focused into a spatially periodic pattern and detected via diffraction of the probe laser beam overlapped with the excitation spot. SAW wavepackets with central frequency 460 MHz travel around the ring and are detected each time they make a full circle and pass trough the probe spot. Potential applications of ring resonators for SAWs are discussed.     

Chemical characterization by XPS of Cu/Ge ohmic contacts to n-GaAs

Chemical composition of Cu/Ge layers deposited on a 1 μm thick n-type GaAs epitaxial layer (doped with Te to a concentration of 5 × 10¹⁸ cm⁻³) and its interface were examined ex situ by XPS combined with Ar⁺ sputtering. These measurements indicate a diffusion of Cu and Ge from the Cu/Ge layer towards GaAs and, also, an out-diffusion of Ga and As from the GaAs layer to the metallic films. The Auger parameter corrected Auger spectra and XPS spectra show only Cu and Ge metals in the in the Cu/Ge layer and in the interface.     

Magnetostriction trend of non-oriented 6.5% Si–Fe

Non-oriented electrical steel is produced in strip form typically 0.35–1.0 mm thick and containing 0–3 wt% silicon. It is well-known that non-oriented electrical steel is not quite isotropic but has small anisotropy. In the last decade, NKK produced 0.1 mm thick, non-oriented steel 6.5% Si which has applications such as in high-frequency transformer due to its high electrical resistivity, low core losses, near zero magnetostriction, and high permeability. The magnetostriction of 6.5% silicon steel samples with dimensions 280 mm×30 mm×0.1 mm was measured when magnetised sinusoidally between 0.5 and 1.0 T at frequencies between 0.5 and 6 kHz. Test samples were clamped at one end and the peak-to-peak displacement of the free end was measured with the aid of the single-point laser vibrometer. The average peak–peak magnetostriction was 0.2–0.25 με apart from a sharp rise to 1.2 με at 2 kHz magnetising frequency. This agrees well with the predicted value of 2 kHz for l=0.28 m, d=7430 kg/m³ and E=166 GPa. This shows that although the 6.5% silicon steel is often thought of as having near zero magnetostriction, care is needed to avoid lamination lengths corresponding to resonance points which could induce higher noise in laminated cores.     

Tribological changes on SS304 stainless steel induced by nitrogen plasma immersion ion implantation with and without auxiliary heating

In order to achieve quite thick treated layers with reasonable thickness uniformity in SS304 steel, the plasma immersion ion implantation (PIII) process was run in high-temperature, up to 350 °C, to induce high thermal diffusion but avoid the white layer formation. In these experiments, we heated the sample-holder with a shielded resistive wire properly wound around it and subjected the SS samples to nitrogen glow discharge PIII with relatively low voltages (10 kV) in different temperatures. We also treated the SS samples by the traditional PIII method, slowly increasing the high voltage pulse intensities, until 14 kV at the end of processing, reaching temperatures of up to 350 °C. These modes of treatments were compared with respect to nitrogen implantation profiles, X-ray diffraction, tribology and mechanical properties. X-ray diffraction results indicated a much higher efficiency of auxiliary heated PIII mode compared to the ordinary PIII. Very prominent γ_N peaks were observed for the first mode, indicating large concentration of nitrogen in thick layers, confirmed by the nitrogen profiles measured by GDOS and AES. Improved mechanical and tribological properties were obtained for SS304 samples treated by the PIII with auxiliary heating, more than for ordinary PIII. Hardness was enhanced by up to 2.77 times, as seen by nanoindentation tests.     

Diamond deposition on siliconized stainless steel

Silicon diffusion layers in AISI 304 and AISI 316 type stainless steels were investigated as an alternative to surface barrier coatings for diamond film growth. Uniform 2 μm thick silicon rich interlayers were obtained by coating the surface of the steels with silicon and performing diffusion treatments at 800 °C. Adherent diamond films with low sp² carbon content were deposited on the diffused silicon layers by a modified hot filament assisted chemical vapor deposition (HFCVD) method. Characterization of as-siliconized layers and diamond coatings was performed by energy dispersive X-ray analysis, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.     

Effect of the incorporation of N,N′-methylene-bis-acrylamide on the multiplexing of holograms in a hydrophilic acrylamide photopolymer

The behaviour of a hydrophilic acrylamide photopolymer, with and without crosslinker (N,N′-methylene-bis-acrylamide), in solid layers 700 μm thick is analyzed. Slanted diffraction gratings are multiplexed at constant and variable exposure. Variable exposure time scheduling, with increased exposure time by steps is used in order to determine the effect on the dynamic range and the homogenization of diffraction efficiency values. This scheduling results in a greater dynamic range compared with constant time multiplexing. For crosslinked photopolymer, those exposure times are excessive (higher energetic sensitivity) and there is overlapping of the individual angular response curves for each stored diffraction grating.