Resonant impurity bands in semiconductor superlattices

It is shown that the confined impurity state of a semiconductor quantum well develops into an excited impurity band in the case of a superlattice. This is studied by following theoretically the transition from a single to a multiple quantum well or superlattice by exactly diagonalizing the three-dimensional Hamiltonian for a quantum well system with random impurities. Intersubband absorption experiments, which can be nearly perfectly reproduced by the theory, corroborate this interpretation, which also requires reinterpretation of previous data.     

Density of states of impurity bands in semiconductors

The formalism of Matsubara-Toyozawa for impurity bands in semiconductors is extended by including the correlation effect on electron hopping matrix elements. The density of states of impurity bands for various impurity concentrations is computed numerically. The comparison with Matsubara-Toyozawa's result indicates that the impurity bandwidth is drastically reduced by electron correlation.     

Ferromagnetism in Mn-doped ZnO due to impurity bands

We have prepared quasi-homoepitaxial Zn_0.95Mn_0.05O-films on ZnO substrates by pulsed laser deposition. The thin films were characterized by in situ RHEED during growth, X-ray diffraction and reflectometry, as well as transmission electron microscopy (TEM). The magnetic properties have been analyzed by SQUID magnetometry and by measuring the anomalous Hall effect. By varying the growth conditions (substrate temperature: 200–600 ^∘C, deposition atmospheres: Ar, O₂) a different concentration of impurities has been generated. Our results show that the films are electron doped and exhibit a ferromagnetic coupling that depends on the impurity concentration.     

Superconductivity in a model with overlapping wide and flat bands

The density of one-electron states at the Fermi level with allowance for weak Coulomb correlations between the band electrons is calculated in a superconductivity model having overlapping wide and flat bands. The dependence of the superconducting transition temperature on the doping level is obtained. Fiz. Tverd. Tela (St. Petersburg) 39, 237–239 (February 1997)     

Strong impact of impurity bands on domain formation in superlattices

The formation of electric field domains in doped semiconductor superlattices is described within a microscopic model. Due to the presence of impurity bands in low-doped samples the current–voltage characteristic is essentially different compared to medium-doped samples.     

Position of polarized impurity absorption bands and orientation statistics of impurity molecules in uniaxial polymer films

The features of a static shift and splitting of polarized electronic absorption bands of uniaxial impurity molecules are studied in uniaxial polymer films. The specific properties of the orientation statistics of impurity molecules are found that are typical for stretched polymer films and result in the qualitative difference of the dependence of positions and splitting of polarized absorption bands on the order parameter of the impurity molecules compared to impurity nematic liquid crystals.     

Sunlight loss for femtosecond microstructured silicon with two impurity bands

Black silicon,produced by irradiating the surface of a silicon wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas,is widely believed to be a potential material for efficient multi-intermediate-band silicon solar cells.Taking chalcogen as an example,we analyse the loss of sunlight for silicon with two impurity bands and we find that loss of the sunlight can be minimized to 0.332 when Te 0 (0.307 eV) and Te + (0.411 eV) are doped into microstructured silicon.Finally,problems needed to be resolved in analysing the relationship between conversion efficiency of the ideal four-band silicon solar cell and the position of the introduced two intermediated bands in silicon according to detailed balance theory are pointed out with great emphasis.     

Band offsets, Fermi levels and impurity bands in doped contact layers

A mathematical formalism for use in the study of the temperature dependence of Tsu-Esaki tunneling currents is developed. The discussion includes recently discovered corrections to the Tsu-Esaki tunneling current calculation. These corrections involve emitter and collector electron density effects. The tunneling current is fully amenable to numerical calculation, but some calculations can be facilitated by analytic techniques. An operator technique of Blankenbecler is illustrated and used to generate low temperature series expansions for the tunneling current and emitter-collector electron densities.     

On temperature dependence of impurity absorption and luminescence bands in dielectric crystals

In terms of the adiabatic approach to determining the states of an impurity dielectric crystal, the temperature dependence of the first moment (maximum) of the optical band that arises upon vibronic transitions in a local center is studied. It is shown that the frequency of the band maximum and absolute temperature are linked with each other by a relation that is analogous to the Wien’s displacement law for equilibrium radiation. This result is consistent with experimental data obtained, in particular for F absorption and luminescence bands in alkali halide crystals.     

光子晶体耦合腔波导的色散特性

理论研究表明，在基于光子晶体的耦合腔波导中，杂质带的色散性质取决于相邻缺陷间局域电磁场的特性，而非缺陷间距离的大小.在第一布里渊区中出现的杂质带的反常色散实际上是能带折叠的结果.通过计算结构的有效折射率，证实了杂质带色散是正常色散. 关键词： 光子晶体 反常色散 耦合腔 杂质带     

Nature of the impurity bands of the edge luminescence of highly doped compensated ZnSe:N

A modification of the model of potential fluctuations is suggested to explain the experimentally observed dependences of the form and position of the maxima in the impurity luminescence spectra of ZnSe specimens, highly doped with an acceptor nitrogen impurity, on the degree of doping, excitation level, temperature, and decay time. In this model, analysis of the recombination of donor-acceptor pairs is replaced by consideration of transitions from localized and delocalized states of the donor impurity band and density tail of the conduction-band states, which appear in strong doping because of the overlapping of wave functions of the donor states, to the acceptor levels. The influence of the parameter of the electron-phonon interaction on the spectrum shape is considered. The model allows one to offer a consistent explanation at the qualitative level for the features observed experimentally. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 1, pp. 86–90, January–February, 2000.