The Effect of Triple Junctions on Grain Boundary Motion and Grain Microstructure Evolution

The theory of steady state motion of grain boundary sytems with triple junctions and the main features of such systems are considered. A special technique of in-situ observations and recording of triple junction motion is introduced, and the results of experimental measurements on Zn tricrystals are discussed. It is shown, in particular, that the described method makes it possible to measure the triple junction mobility. It was found that the measured shape of a moving half-loop with a triple junction agrees with theoretical predictions. A transition from triple junction kinetics to grain boundary kinetics was observed. This means that triple junctions can drag boundary motion. It is demonstrated that the microstructural (granular) evolution is slowed down by triple junction drag for any n-sided grain. The second consequence pertains to six-sided grains. For a boundary system with dragging triple junctions there is no unique dividing line between vanishing and growing grains with respect to their topological class anymore, like n = 6 in the Von Neumann-Mullins relation.     

Interaction of Solute Impurity with Grain Boundary: The Impurity Drag Effect

An equation of grain boundary motion in a binary polycrystal is derived. The derivation is based on minimization of free energy of the total systems. The equation takes into account an impurity segregation at the grain boundary, grain boundary curvature and energy.As an example, we apply this equation to the analysis of the impurity drag effect problem. It is shown, that the sign of the impurity effect on grain boundary velocity (delay or acceleration) does not depend on kinetic coefficients. The sign of the effect is determined by a thermodynamic function which combines the grain boundary segregation coefficient, the derivative of grain boundary energy with respect to absorbed impurity concentration, and the derivative of bulk free energy with respect to bulk impurity concentration.     

Criteria for the Occurrence of the Diffusion-Induced Grain Boundary Migration

Recent experimental data on diffusion-induced grain boundary migration (DIGM) are reviewed. For the case of the coherency strain driving force, quantitative criteria for the occurrence of DIGM are suggested, which establish the relationship between the net driving force for grain boundary migration, the diffusivity in the vicinity of the grain boundary, the enthalpy of the grain boundary segregation, the misfit parameter for the solute atoms in the matrix and the solubility of the diffusing element in the matrix. It is shown that an upper limit for the grain boundary velocity during DIGM exists due to the solute drag effect.     

Generation of Electrical Currents and Magnetic Fields by Grain Boundary Motion

The effect of an induced magnetic moment due to grain boundary motion in a magnetic field was studied theoretically in a microscopic and a mesoscopic approximation. It was found that the induced moment generates a drag force on the boundary, which depends on the orientation of the magnetic field with regard to the crystal axis, as observed experimentally. However, the magnitude of the theoretically predicted dependency is much smaller than experimentally observed and even opposite with regard to the orientation dependence. Therefore, the electromagnetic drag can be neglected in comparison with other driving forces for grain boundary motion, but the effect may play a role for fast moving dislocations in a magnetic field.     

Grain boundary migration in Σ=5 bicrystals of an Fe-3%Si alloy

Migration of differently oriented grain boundaries was studied in the =5, 36.9°[100] tilt bicrystals of an Fe-3mass%Si alloy by the modified reversed-capillary technique. The principles of this method are outlined and discussed in connection with the application of multiple annealing of a single sample. It is shown that the errors introduced by both heating and cooling periods and by possible existence of an incubation period do not exceed the scatter of experimental data. A linear dependence between grain boundary migration velocity and driving force was found in most cases. The measured values of the product of grain boundary mobility and energy for individual grain boundaries differ substantially. The values of activation energy of migration of 332 kJ/mol, 392 kJ/mol, and 97 kJ/mol were found for the, {01}, {02} and (001)/(0 4) grain boundaries, respectively.     

Effect of Grain Boundary Segregation and Migration on Diffusion Profiles: Analysis and Experiments

In many experimental studies, curved penetration profiles are observed for grain boundary diffusion performed in the B kinetics regime in contrast to the shape expected from the solutions of the second Fick's equation. To explain these curvatures the effects of grain boundary structure, grain boundary migration, and grain boundary segregation have been successively proposed in the literature. Using previous data for Cu–Ag and Cu–Ni and new ones on Cu–Fe and Cu–Zn systems we will show how it is possible to separate all these possible contributions and how, knowing the true origin of the curvature, one can deduce much quantitative information impossible (or very difficult) to obtain by other techniques.     

Grain Boundary Kinetics in Oxide Ceramics with the Cubic Fluorite Crystal Structure and its Derivatives

Kinetics of grain boundaries in oxides with the cubic fluorite structure and its derivatives has been investigated using fine grain ceramics that are fully dense. Grain growth measurements in these materials have provided information on grain boundary diffusivity over a diffusion distance of the order of the initial grain size. With the addition of solute cations, grain boundary mobility can be varied over many orders of magnitude, often with very different activation energies. This is caused by the variation of defect population and the defect-solute association. Definitive evidence for solute drag has also been observed in some cases, but solute drag can not be confirmed as a general mechanism in solid solutions. Lastly, while grain boundary at low temperature may continue to serve as a fast diffusion path, it may not be able to migrate because of additional pinning mechanisms such as those exerted by grain boundary nodal points or lines. This means that sintering without grain growth is possible, opening up an avenue for obtaining ultrafine ceramics by pressureless sintering.     

Significant decrease in interfacial energy of grain boundary through serrated grain boundary transition

The mechanism of serrated grain boundary formation and its effect on liquation behaviour have been studied in a wrought nickel-based superalloy – Alloy 263. It was newly discovered that grain boundaries are considerably serrated in the absence of γ?′-phase or M₂₃C₆ at the grain boundaries. An electron energy-loss spectroscopy study suggests that serration is triggered by the discontinuous segregation of C and Cr atoms at grain boundaries for the purpose of relieving the excessive elastic strain energy. The grain boundaries serrate to have specific segments approaching one {111} low-index plane at a boundary so that the interfacial free energy of the grain boundary can be decreased, which may be responsible for the driving force of the serration. The serrated grain boundaries effectively suppress grain coarsening and are highly resistant to liquation due to their lower wettability resulting from a lower interfacial energy of the grain boundary.     

剪切作用下Cu(100)扭转晶界塑性行为研究

本文采用分子动力学方法研究了在剪切载荷作用下,Cu(100)扭转晶界对Cu柱屈服强度的影响.模拟结果发现,在加载过程中,低角度扭转晶界形成的位错网发生位错形核与扩展,位错之间的塞积作用提高了Cu柱的屈服强度;对于高角度扭转晶界,晶界发生滑动降低了Cu柱的屈服强度.同时发现,随着扭转角度的增加,Cu柱的屈服强度先增大,当扭转角度大于临界角度时,Cu柱的屈服应力逐渐减小.这表明剪切载荷作用下,两种不同的机理主导Cu柱的屈服,对于小于临界角度的扭转晶界,Cu柱的屈服由晶界位错形核和扩展机理主导,对于大于临界角度 关键词： 扭转晶界 分子动力学 位错形核 晶界滑移     

Effects of the triple junction types on the grain boundary carbide precipitation in a nickel-based superalloy,a statistical analysis

The morphology evolution of carbide precipitated on grain boundary nearby different triple junctions in grain boundary engineering (GBE) treated nickel-based Inconel Alloy 690 aged at 715°C for different time was investigated by scanning electron microscopy and electron backscatter diffraction. The results show that, the diversity of triple junction types was increased by GBE significantly. The size and morphology of grain boundary carbide were not only affected by the grain boundary character, but also the nearby grain boundary character at the triple junction. The higher Σ values of the nearby grain boundaries, the larger carbide precipitated on the other grain boundary. Based on the experimental results, the effects of grain boundary characters and triple junction types on the carbide precipitation behaviours are discussed.     

Theory of grain boundary motion during high-temperature DIGM

A theory of diffusion induced grain boundary migration (DIGM) is presented for high temperatures where volume diffusion of solute atoms out of the grain boundary is important. It is shown that due to the presence of a gradient term in the expression for the free energy of solid solution, even a relatively small discontinuity in the solute distribution across the gain boundary provides enough driving force for grain boundary migration. From the expression obtained for the grain boundary velocity the coefficient for the Ni diffusion across the grain boundaries in a Cu(Ni) polycrystal has been estimated.     

Co-Segregation Effects on Boundary Migration

We analyze the effect of co-segregation on the mobility of grain boundaries within the framework of the impurity drag theory originally proposed by Cahn and Lücke and Stüwe for an ideal solution. The new derivation extends this model to the case where there are two types of impurities (or three components in the alloy). Since the resultant expression for the boundary mobility is complicated, numerical solutions were obtained for several cases to show how co-segregation affects the boundary mobility. Depending on the relative diffusivities of the two impurities which are both attracted to the boundary, the mobility may either increase or decrease with increasing concentration of one of the impurities. When one of the impurities is attracted to the boundary and the other repelled from the boundary, increasing the concentration of the attractive impurity can lead to a sharp decrease in the boundary mobility.     

Stimulation and Suppression of Grain Boundary Sliding by Intragranular Slip in Zinc Bicrystals

The influence of intragranular slip on grain boundary sliding is studied in originally compatible zinc bicrystals with symmetric tilt boundary. The experiment is designed to separate different effects of intragranular slip on the boundary sliding and establish their mechanisms. Grain boundary sliding with and without development of intragranular slip is observed. The rate of sliding accompanied by slip is more than five times of that without slip. A good correlation between the boundary sliding and intragranular slip prior to slide hardening is established. Slide hardening followed by the negative sliding near one end of the boundary and strain hardening in the boundary vicinity, are observed at the last stages of deformation. For the case of formation of slip induced glissile grain boundary dislocations of opposite signs the possibility of their contribution to total grain boundary sliding, is analyzed. The effect of the increase in the rate of sliding is explained in terms of the accommodation of sliding by slip and appearance of additional glissile grain boundary dislocations of one sign due to strain incompatibility. Contribution of these different dislocation mechanisms to the increase in the sliding rate is determined for the stage of deformation preceding slide hardening. It is supposed that the effect of slide hardening and negative sliding as well as boundary curving is created by non-smooth boundary and small degree of incompatibility caused by straining.     

Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary

The grain boundaries (GBs) have a strong effect on the electric properties of ZnO thin film transistors (TFTs). A novel grain boundary model was developed to analyse the effect. The model was characterized with different angles between the orientation of the grain boundary and the channel direction. The potential barriers formed by the grain boundaries increase with the increase of the grain boundary angle, so the degradation of the transistor characteristics increases. When a grain boundary is close to the drain edge, the potential barrier height reduces, so the electric properties were improved.     

Grain boundary interdiffusion in the case of concentration-dependent grain boundary diffusion coefficient

The grain boundary diffusion in a binary system which exhibits a grain boundary phase transition is considered in the framework of Fisher's model. The kinetic law of the growth of the grain boundary phase and the distribution of the diffusant near the grain boundary are calculated. The method of determining of the concentration dependence of the grain boundary diffusion coefficient from the experimentally measured penetration profiles of the diffusant along the grain boundaries is suggested. The experimental results on Zn diffusion in Fe(Si) bicrystals, Ni diffusion in Cu bicrystals and grain boundary grooving in Al in the presence of liquid In are discussed in light of the suggested model.     

Grain Boundary Migration in Metals: Recent Developments

Current research on grain boundary migration in metals is reviewed. For individual grain boundaries the dependence of grain boundary migration on misorientation and impurity content are addressed. Impurity drag theory, extended to include the interaction of adsorbed impurities in the boundary, reasonably accounts quantitatively for the observed concentration dependence of grain boundary mobility. For the first time an experimental study of triple junction motion is presented. The kinetics are quantitatively discussed in terms of a triple junction mobility. Their impact on the kinetics of microstructure evolution during grain growth is outlined.     

Examination of Dislocation Mechanism on Grain Boundary Sliding in High Angle Grain Boundaries by Stress Change Test

In order to understand the factors dominating grain boundary sliding, stress change tests and stress reversal tests were conducted on aluminum bicrystal specimens with high angle grain boundaries. It is found that small change in stress results in the remarkable change in the rate of grain boundary sliding. Stress reversal tests showed that grain boundary slide hardening does not work for the sliding to the direction opposite to that before the stress reversal. Mean internal stresses for the dislocations contributing to grain boundary sliding are experimentally measured by a method consisting of stress change and annealing. It is found that the velocity of dislocations in the grain boundary is in proportion to the mean effective stress.     

Grain Boundary Migration in Ceramics

During ceramic fabrication, densification processes compete with coarsening processes to determine the path of microstructural evolution. Grain growth is a key coarsening process. This paper examines grain boundary migration in ceramics, and discusses the effects of solutes, pores, and liquid phases on grain boundary migration rates. An effort is made to highlight work in the past decade that has contributed to and advanced our understanding of solute drag effects, pore-boundary interactions, and the role of liquid phases in grain growth and microstructural evolution. Anisotropy of the grain boundary mobility, and its role in the development of anisotropic (anisometric) microstructures is discussed as it is a central issue in recent efforts to produce ceramic materials with new combinations of properties and functionality.     

On the Origin and Energy of Triple Junction Defects Due to the Finite Length of Grain Boundaries

King [1] established that due to the discrete nature of their dislocation structure, finite length grain boundaries (GBs) in polycrystalline materials possess discrete values of misorientation angle. For a GB with a length that is not a multiple of the GB period, this leads to the formation of specific disclinations at their junctions with neighboring GBs, which compensate the difference between the misorientations of finite and infinite boundaries. In the present paper the origin of these compensating disclinations within GB triple junctions is elucidated and their strength is calculated using the disclination-structural unit model. It is shown that for a GB with length of about 10 nm the junction disclinations can have a strength value not more than 1°, in contrast to King's calculations that indicate much larger values. Elastic energies of triple junctions due to compensating disclinations are calculated for both equilibrium and non-equilibrium structures of a finite length GB, which differ by the position of the grain boundary dislocation network with respect to the junctions. The calculations show that triple junction energies are comparable to dislocation energies, and that compensating disclinations can play a significant role in the properties of nanocrystalline metals with grain sizes less than about 10 nm.     

Influence of impurities on the fracture behaviour of tungsten

Ten tungsten materials with different impurity concentrations and different microstructures have been investigated by Auger electron spectroscopy and scanning electron microscopy with respect to their fracture behaviour. For almost all samples, both inter- and transgranular fracture are observed, and the proportion of each type varies. Due to the difference in their impurity content and grain boundary area, a large variation in the grain boundary impurities can be expected. By analysing the fracture surfaces the effect of grain boundary impurities, especially phosphorous and oxygen, on the fracture resistance of the boundaries was determined. The results indicate that for the analysed tungsten materials, grain boundary impurities do not have a significant influence on the fracture resistance of the boundaries. Other factors such as the size and shape of the grains, the amount of deformation and therefore the density of dislocations within the grains have a greater impact on the fracture behaviour of tungsten.