EELS studies of surface phonons on Ag(111)

High-resolution electron energy loss spectroscopy is used to study surface phonons in the direction of qG on Ag(111). The gap mode (S₂) at in the surface Brillouin zone is measured for the first time. We have also measured the Rayleigh mode and the resonance mode up to the zone boundary. The results are complementary to the earlier He atom scattering measurements and are in good agreement with the first-principles calculations performed recently.     

Composition and structure of chemically prepared GaAs(1 1 1)A and (1 1 1)B surfaces

The (1 1 1)A and (1 1 1)B surfaces of GaAs chemically treated in HCl-isopropanol solution (HCl-iPA) and annealed in vacuum were studied by means of X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED) and electron energy loss spectroscopy (EELS). To avoid uncontrolled contamination, chemical treatment and sample transfer into UHV were performed under pure nitrogen atmosphere. The HCl-iPA treatment removes gallium and arsenic oxides, with about 0.5-3 ML of elemental arsenic being left on the surface, depending on the crystallographic orientation. With the increase of the annealing temperature, a sequence of reconstructions were identified by LEED: (1 × 1) and (2 × 2) on the (1 1 1)A surface and (1 × 1), (2 × 2), (1 × 1), (3 × 3), (√19 × √19) on the (1 1 1)B surface. These sequences of reconstructions correspond to the decrease of surface As concentration. The structural properties of chemically prepared GaAs(1 1 1) surfaces were found to be similar to those obtained by decapping of As-capped epitaxial layers.     

Photoelectron holography analysis of W(1 1 0)(1×1)–O surface

By applying photoelectron holography analysis to a W(1 1 0)(1×1)–O surface, the real space image was reconstructed around the oxygen atoms. The peak positions showed that the oxygen atoms lie within the top layer, which does not contradict the results of the R-factor X-ray photoelectron diffraction analysis of Daimon et al. [Surf. Sci. 408 (1998) 260]. The holographic analysis of the calculated photoelectron diffraction pattern indicated that holographic reconstruction reveals atomic positions up to the third nearest-neighbor scatterers. Our study suggests the possibility that the distance among the adsorbate oxygen atoms is slightly larger than the lattice constant of the substrate.     

Morphological change of D2O layers on Ru(0 0 0 1) probed with He atom scattering

The morphological change of D₂O layers on a Ru(0 0 0 1) surface has been investigated on the basis of He atom scattering. With the increase of D₂O exposure on Ru(0 0 0 1) at 111 K, the intensity of a specularly reflected He beam continuously decreases up to the exposure of 1.0 L (Langmuir). At the D₂O coverage of 1.0 adsorbed layer (∼1.5 L), which is characterized by temperature-programmed desorption measurements, the formation of the (√3 × √3)R30° superstructure as a result of the diffusion of D₂O on the surface was confirmed by He atom diffraction. With the further increase of D₂O exposure, at 2-3 adsorbed layers, the disordered structure was found to be on the surface at 111 K. The morphological change of the disordered layers was observed during annealing, and discussed in detail.     

The structure and lattice dynamics of RbBr(1 0 0) and RbI(1 0 0) single crystal surfaces: A tensor low energy electron diffraction analysis

The structure and lattice dynamics of RbBr(1 0 0) and RbI(1 0 0) single crystal surfaces cleaved under UHV conditions were investigated by means of low energy electron diffraction (LEED) at temperatures of 156 K and 183 K, respectively. Since RbBr and RbI are insulators the experiments were carried out with a microchannel plate LEED system at very low primary currents (5 nA). For both materials four different diffraction orders could be observed. Diffraction patterns were recorded over an energy range from 30 eV to 220 eV in increments of 2 eV and I(V) curves for each spot were extracted. The I(V) curves were analyzed using the tensor LEED approach. For both alkali halide substrates surface structures of (1 × 1) periodicity close to the truncated bulk structure were found. For RbBr, the first interlayer distance is reduced by about 2.2%, where the Rb⁺ cations in the topmost layer are shifted inwards by 0.06(3) Å, and the anions also exhibit an inward shift which is however smaller (0.04(3) Å). The root mean square vibrational amplitudes are enlarged by a factor of 1.3 for Rb⁺ and 1.25 for Br⁻, respectively. For RbI(1 0 0) the cations of the topmost layer are shifted inwards by 0.07(3) Å and the anions outwards by 0.02(1) Å. The vibrational amplitudes of the ions are not enlarged as for RbBr but close to the corresponding bulk values.     

Surface electromigration of metals on Si(001): In/Si(001)

The possibility of surface electromigration (SE) of metals of In, Ga, Sb and Ag on a very flat Si(001)2×1 substrate (single domain 2×1) was examined by SEM, μ-RHEED and μ-AES under UHV conditions. It was found that Ga, Sb and Ag show no SE on Si(001) surface even at DC annealing temperatures for the desorption of these metals. For In on Si(001), a very fast SE (8000 μm/min) towards the cathode side was found that suddenly sets in at 450°C DC annealing, which was related to a surface phase transition. μ-RHEED and μ-AES observation showed that the SE is related to an ordered 4×3-In phase together with two-dimensional In gas phase over the 4×3-In phase and an In-disordered phase at the front end of SE. Single domain 4×3-In phases were found to occur under sequences of In deposition and DC annealing which involve the In SE on Si(001).     

Surface phonons of clean, hydrogen- and deuterium-terminated Si(0 0 1) surfaces

We present a comprehensive vibrational study of the clean and hydrogen- or deuterium-terminated silicon (0 0 1) surface. The modes related to the clean as well as to the H:Si, D:Si, and 2H:Si, 2D:Si surfaces are studied by means of high resolution electron energy loss spectroscopy (HREELS). We pay special attention to the modification of the phonon modes by the surface treatments and compare the data with reported experimental and theoretical results. The analysis of the relative phonon intensities of the clean, mono- and dihydride surfaces yields the assignment of the modes related to the dimer bonds. The isotopic shifts of vibrons related to the Si-H and Si-D bonds and to the surface phonon are discussed and applied to the characterisation of the surface excitations.     

Well-ordered (1 0 0) InAs surfaces using wet chemical treatments

Atomic ordering of HCl-isopropanol (HCl-iPA) treated and vacuum annealed (1 0 0) InAs surfaces was studied by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and reflectance anisotropy spectroscopy (RAS). On the as-treated surface, a diffused (1 × 1) pattern is observed, which successively evolves to the β₂(2 × 4)/c(2 × 8) and (4 × 2)/c(8 × 2) ones after annealing to 330 °C and 410 °C, respectively. At the intermediate temperature of 370 °C, an ₂(2 × 4)/(4 × 2) mixed reconstruction is observed. Reflectance anisotropy spectra are compared with those of the corresponding reconstructions observed after As-decapping and found to be quite similar. Therefore we conclude that high-quality (1 0 0) InAs surfaces can be obtained by wet chemical treatment in an easy, inexpensive and practical way.     

Large scale atomic ordering on uncovered GaAs(0 0 1) after InAs monolayer capping: Atomic structure of the (12 × 6) reconstruction

A well ordered c(8 × 2)-InAs monolayer is grown by molecular beam epitaxy (MBE) on a GaAs(0 0 1) substrate. After slow sublimation of this monolayer up to 560 °C, a homogeneously (n × 6) reconstructed GaAs surface is obtained. This surface is studied by scanning tunneling microscopy (STM) in UHV. This shows that it is well-ordered on a large scale with 200 nm long As dimer rows along and is also locally (12 × 6) reconstructed, the cell structure is proposed. We believe that this surface organization results from the specific As/Ga (0.7) surface atomic ratio obtained after the InAs monolayer growth and sublimation cycle.     

Coadsorption of water and CO molecules on Ru(0 0 1) at high CO coverages: comparisons with a Ru(0 0 1) electrode surface

The coadsorption of carbon monoxide (CO) and water molecules on a Ru(0 0 1) surface has been studied by infrared spectroscopy, LEED and STM. At high CO coverage phases, a 2×2-(2CO+D₂O) structure was observed on both UHV and electrode surfaces. Electrode potential dependent structures from CO and water adlayers on an electrode surface were reproduced on a UHV surface by controlling molecular orientations of the first layer and second over-layer water molecules. At lower CO coverages, a CO band center showed coverage dependent shift down to 1444 cm⁻¹ due to an electron transfer from a lone pair of a water molecule to CO 2π^*.     

Boron and indium incorporation in GaP(0 0 1) surfaces by vapour deposition: Density-functional supercell calculations of the surface stability

Using surface supercells and the density-functional method, surface formation energies are calculated for probable GaP(0 0 1) reconstructions without and with indium or/and boron substitutions. Obtained surface stability diagrams provide surface compositions and surface structures in dependence on the growth conditions: indium atoms are built into the c(4 × 4) patterns under strongly P-rich conditions and into the β2(2 × 4) reconstruction under less P-rich conditions. Under In-rich and non-P-rich conditions, initial structures of metallic InGa phases are formed in the (2 × 4) mixed-dimer reconstruction. In the c(4 × 4) and (2 × 4) mixed-dimer patterns the full range of In:Ga content is accessible by variation of the In:Ga ratio in the gas phase. Boron can be built into the c(4 × 4) patterns of the GaP(0 0 1) surface in form of isolated atoms or nearest-neighbours under strongly P-rich and moderately to strongly B-rich conditions. The boron incorporation is strongly enhanced at the surface in respect to theoretical predictions for the bulk, what explains the larger content found experimentally. Assuming P-rich conditions, which are suitable for the growth of the ternary alloys, the obtained surface stability diagram for the quaternary (BInGa)P shows that nearly the full range of In:Ga content is accessible. However, the boron content in the alloy is restricted as found analogously for (BGa)P and is independent of the indium content. The expected increase of the boron content in presence of indium cannot be confirmed. Contrary to the analogous GaAs systems, boron atoms do not substitute phosphor atoms (antisite position) in GaP, (InGa)P, (BGa)P, and (BInGa)P.     

A PdO(1 0 1) thin film grown on Pd(1 1 1) in ultrahigh vacuum

We present experimental results demonstrating that a high quality PdO(1 0 1) thin film can be grown on Pd(1 1 1) in ultrahigh vacuum by oxidizing the metal at 500 K using an oxygen atom beam, followed by annealing to 675 K. Low energy electron diffraction (LEED) images show that the [0 1 0] direction of the PdO(1 0 1) thin film aligns with the [−1 1 0] direction of the Pd(1 1 1) substrate, and that the PdO film grows in three degenerate domains, rotated 120° relative to one another. Based on excellent agreement between the experimental and simulated LEED patterns, we conclude that the surface structure of the PdO thin film deviates minimally from bulk-terminated PdO(1 0 1). Recent temperature programmed desorption (TPD) experiments also provide evidence that the PdO(1 0 1) thin film on Pd(1 1 1) is terminated by the stoichiometric surface in which half of the Pd atoms are coordinatively unsaturated (cus), corresponding to a cus-Pd atom density equal to about 35% of the surface density of Pd(1 1 1). The ability to generate a well-defined PdO(1 0 1) surface in ultrahigh vacuum should provide new opportunities for conducting model surface science studies of PdO, particularly studies aimed at elucidating the reactivity of PdO(1 0 1) toward species important in commercial applications of Pd catalysis.     

Elastic origin of the O/Cu(1 1 0) self-ordering evidenced by GIXD

We have studied by grazing incidence X-ray diffraction the self-ordering of the Cu-CuO stripe pattern. By comparing the experimental results to molecular dynamics simulations and anisotropic linear elastic calculations, we have been able to determine the atomic relaxations within the Cu substrate. The results show the importance of the crystalline anisotropy in the relaxation field. These relaxations are due to the surface stress difference Δσ between oxygen-covered and bare Cu(1 1 0) regions. For the different oxygen coverages studied, we have always found Δσ=1.0±0.1 N m⁻¹. This surface stress difference is shown to be the origin of the self-ordering.     

STM/nc-AFM investigation of (n×6) reconstructed GaAs(0 0 1) surface

We have investigated the n×6 reconstructed GaAs(0 0 1) surface with scanning tunneling and non-contact atomic force microscopy techniques (STM/nc-AFM). For the first time atomically resolved nc-AFM images of that surface are shown. The images confirm the presence of rows of arsenic dimers in the topmost layer as predicted by the current model of n×6 reconstructed surface. However, in contrast to previous reports we found that postulated As dimer sites are not fully occupied. Moreover, the images suggest that ×6 symmetry is present on the surface even in absence of the dimers. We show that due to probing of different surface properties nc-AFM and STM are complementary tools for complex surfaces investigation.     

In situ measurements of InAs and InP (0 0 1) surface stress changes induced by surface reconstruction transitions

The anisotropic surface stress changes associated with the transition between different surface reconstructions of InAs and InP (0 0 1) surfaces are measured in situ and in real time in a molecular beam epitaxy (MBE) system. Reflectivity anisotropy of the surface measured at 1.96 eV, together with reflection high energy electron diffraction (RHEED) pattern, are used in order to identify the surface reconstructions, and the monitoring of the substrate curvature evolution to determine the variations in surface stress. Our results show the important contribution to the surface stress of the dimers present in these reconstructed surfaces. Furthermore, we provide for the first time quantitative values of the surface stress changes due to the transition between surface reconstructions for these III-V semiconductors compounds. We obtain values for these changes up to 0.7 Nm⁻¹, that is, of the same magnitude as the stress induced by deposition of one monolayer during growth of lattice-mismatched III-V semiconductor heteroepitaxial systems. This points out the great importance of surface stress evolution in this kind of processes.     

A single h-BN layer on Pt(1 1 1)

The structure and formation of an ultrathin hexagonal boron nitride (h-BN) film on Pt(1 1 1) has been studied by a combination of scanning tunneling microscopy, low energy electron diffraction, low energy electron microscopy, X-ray absorption and high resolution core level spectroscopy. The study shows that a single boron nitride layer is formed on Pt(1 1 1), resulting in a coincidence structure. High resolution scanning tunneling microscopy (STM) images of the h-BN ultrathin film display only one of the atomic species in the unit cell. Probing the boron and nitrogen related local density of states by near edge X-ray absorption fine structure measurements we conclude that the nitrogen sublattice is visible in STM images. The growth of the single hexagonal boron nitride layer by vapourized borazine in the pressure range of 1×10^-6–1×10^-8 at 800 °C is further studied by low energy electron microscopy, and reveals that the number of nucleation sites and the perfection of the growth is strongly pressure dependent. A model for the single, hexagonal, boron nitride layer on Pt(1 1 1) is proposed.     

A surface X-ray diffraction study of TiO2(1 1 0)(3 × 1)-S

Surface X-ray diffraction has been used to investigate the structure of TiO₂(1 1 0)(3 × 1)-S. In concert with existing STM and photoemission data it is shown that on formation of a (3 × 1)-S overlayer, sulphur adsorbs in a position bridging 6-fold titanium atoms, and all bridging oxygens are lost. Sulphur adsorption gives rise to significant restructuring of the substrate, detected as deep as the fourth layer of the selvedge. The replacement of a bridging oxygen atom with sulphur gives rise to a significant motion of 6-fold co-ordinated titanium atoms away from the adsorbate, along with a concomitant rumpling of the second substrate layer.     

Anomalous hybridization in the In-rich InAs(0 0 1) reconstruction

The surface bonding arrangement in nearly all the confirmed reconstructions of InAs(0 0 1) and GaAs(0 0 1) have only two types of hybridization present. Either the bonds are similar to those in the bulk and the surface atoms are sp³ hybridized or the surface atoms are in a tricoordinated bonding arrangement and are sp² hybridized. However, dicoordinated In atoms with sp hybridization are observed on the InAs(0 0 1), In-rich, room temperature and low temperature surfaces. Scanning tunneling microscopy (STM) images of the room temperature (300 K) InAs(0 0 1) surface reveal that the In-rich surface reconstruction consists of single-atom rows with areas of high electron density that are separated by ∼4.3 Å. The separation in electron density is consistent with rows of undimerized, sp hybridized, In atoms, denoted as the β3′(4 × 2) reconstruction. As the sample is cooled to 77 K, the reconstruction spontaneously changes. STM images of the low temperature surface reveal that the areas of high electron density are no longer separated by ∼4.3 Å but instead by ∼17 Å. In addition, the LEED pattern changes from a (4 × 2) pattern to a (4 × 4) pattern at 77 K. The 77 K reconstruction is consistent with two (4 × 2) subunit cells; one that contains In dimers on the row and another subunit cell that contains undimerized, sp hybridized, In atoms on the row. This combination of dimerized and undimerized subunit cells results in a new unit cell with (4 × 4) periodicity, denoted as the β3(4 × 4) reconstruction. Density functional theory (DFT) and STM simulations were used to confirm the experimental findings.     

InAs wetting layer evolution on GaAs(0 0 1)

The evolution of two-dimensional (2D) strained InAs wetting layers on GaAs(0 0 1), grown at different temperatures by molecular beam epitaxy, was studied by in situ high-resolution scanning tunneling microscopy. At low growth temperature (400 °C), the substrate exhibits a well-defined GaAs(0 0 1)-c(4 × 4) structure. For a disorientation of 0.7°, InAs grows in the step-flow mode and forms an unalloyed wetting layer mainly along steps, but also in part on the terrace. The wetting layer displays some local c(4 × 6) reconstruction, for which a model is proposed. 1.2 monolayer (ML) InAs deposition induces the formation of 3D islands. At a higher temperature (460 °C), the wetting layer is obviously alloyed even at low InAs coverage. The critical thickness of the wetting layer for the 2D-to-3D transition is shifted to 1.50 ML in this case presumably since the strain is reduced by alloying.     

Energetics of the growth mode transition in InAs/GaAs(0 0 1) small quantum dot formation: A first-principles study

Based on first-principles density-functional pseudopotential calculations, the growth of InAs on the GaAs(0 0 1) surface has been studied. By analyzing the free energies of the surfaces with different thicknesses of the InAs coverages, the critical thickness of the layer-by-layer (2D) to island (3D) growth mode transition is predicted to be around 1.5 ML. Comparing the total energy differences between layer-by-layer growth models and 3D island models, the mechanism of the 2D-3D growth mode transition near the critical thickness (θ_crit) is studied which indicates that at the initial stage of InAs quantum dots formation, small 3D islands are formed randomly.