半导体微腔中腔模、重空穴激子模和轻空穴激子模耦合

采用传输矩阵方法利用半经典的线性色散模型,计算半导体微腔内同时存在重空穴激子、轻空穴激子时,在不同入射角度下的反射谱,同时,利用三简谐振子耦合模型计算了在不同入射角度下,腔模同时和重空穴激子模、轻空穴激子模耦合所形成的三支腔极化激元的能量,以及腔模、重空穴激子模、轻空穴激子模分别在三支腔极化激元中所占的权重,结果表明随着入射角的增加腔极化激元的高能支和两个低能支之间存在明显的反交叉现象,同时,腔模和重空穴激子模、轻空穴激子模在腔极化激元中所占的权重呈现增加或减小的趋势 关键词： 半导体微腔 腔极化激元 激子     

Interface exciton modes and superconducting transition temperature of a metal in contact with a semiconductor

The problem of superconductivity in a metal-semiconductor system has been studied, using the dielectric formulation of superconductivity. The charge redistribution due to the quantum penetration of the metallic electrons to the semi-conductor side is approximated by a simple exponential function. The interface exciton modes are obtained within the framework of classical electrostatics, and their effect in modifying the effective electron-electron interaction near the interface is investigated. It is found that the strength of the excitonic term is small, and by itself, insufficient to lead to superconductivity. Nevertheless, it can alter the superconducting transition temperature of a metal, if it is already superconducting due to some other mechanism. This has been studied as a function of the various parameters entering in the problem.     

纳米半导体中多重激子效应研究进展

多重激子效应是指纳米半导体吸收一个高能光子后产生两个甚至多个电子-空穴对的物理过程,不仅具有重要的基础研究意义,而且在新型太阳电池及高性能光电子器件领域具有潜在应用价值.综述了多重激子效应的发展历程;总结了纳米半导体的材料组分、体系结构甚至表面质量对多重激子效应的影响;介绍了多重激子效应的实验测试分析方法以及解释多重激子效应的理论方法;概括了目前多重激子效应在器件中的应用并对其应用前景进行展望.     

ZnO薄膜的激子能量和束缚能的计算

采用有效质量近似，将耦合在一起的6×6价带本征方程分开来考虑, 取激子试探波函数为z方向和x-y平面分离的形式，用变分法计算了ZnO薄膜重空穴带激子基态能、第一激发态能、束缚能和激子的半径随薄膜厚度的变化关系，并讨论了电子波函数的量子隧穿效应对厚度d<2.0 nm薄膜的能量修正. 关键词： 激子 ZnO薄膜 纤锌矿     

On cobalt magnetization suppression at bimetallic interfaces

We study theoretically the Co magnetization suppression at the Co–M (M=Ti, Nb, Mo, Re, Os, Ir and Pt) interface. We consider (1) M(1×1) overlayer on the FCC(1 1 1) or HCP(0 0 0 1) slab, (2) c(2×2) Co–M alloy above the same surfaces. In the latter case, the Co magnetization is reduced to about 0.5 μ_B by Ti, Nb, Mo and Re, but the effect is probably an overestimation because of compression of M–Co bonds. At Co atoms below the M(1×1) overlayer, the Co magnetization does not drop below 1 μ_B. We discuss also the Co–M antiferromagnetic coupling.     

磁场和量子点尺寸对激子性质的影响

在In_0.6Ga_0.4As/GaAs量子点中,采用一维等效势模型和有限差分法理论计算了激子态的性质,得到了激子跃迁能和束缚能随磁场、横向束缚强度以及量子点尺寸的变化关系.结果表明:加入磁场后,Zeeman效应使得激子的能级简并度解除,激子的基态跃迁能与实验符合得很好;横向束缚强度或磁场强度的增加使得激子的束缚增强;量子点的尺寸对激子的束缚产生重要的影响;通过电子-空穴间平均距离以及激子体系波函数分布图像分析了其产生的物理机制.     

高聚物中极化子和三重态激子的碰撞过程研究

采用一维紧束缚近似的SSH模型,计算了不同强度的电场下高聚物中一个负电极化子和一个三重态激子的碰撞过程.结果表明,碰撞后体系仍保持为极化子和三重态激子状态的几率最大,束缚在极化子缺陷中的电子有较大的几率被激发到导带形成自由电子,另外,三重态激子有一定的几率被极化子湮灭形成极化子激发态.极化子和激子的碰撞对极化子的稳定性有影响,还会使能隙中出现新的能级.由于极化子激发态可以通过辐射跃迁回到基态,因此碰撞会对高聚物的电致发光效率产生一定影响.研究结果对于理解高聚物中极化子的输运性质和高聚物的发光性质具有一定的 关键词： 极化子 激子 高聚物     

Transient photovoltage and photoluminescence study of exciton dissociation at indium tin oxide/pentacene interface

The exciton dissociation at ITO/pentacene interface is studied by means of transient photovoltage measurement.Opposite to ITO/NPB,ITO/CuPc or ITO/C60 interface where polarity change of transient photovoltage is observed,no interfacial dissociation is found at room temperature,which indicates a lack of Frenkel excitons in pentacene.Temperature-dependent photoluminescence (PL) is investigated.More like the behavior of inorganic semiconductors,the integrated PL intensity exhibits monotonic decrease with increa...     

极性晶体膜中强耦合激子的极化子效应和温度依赖性

采用线性组合算符和变分方法研究了极性晶体膜中激子与表面光学(SO)声子强耦合、与体纵光学(LO)声子弱耦合体系的性质,推导出了激子诱生势的表达式,并以AgBr晶体为例进行了数值计算.结果表明:激子的诱生势不仅与电子-空穴间距离有关,而且温度与极性晶体膜厚度对激子诱生势的影响也十分显著.     

极性晶体膜中强耦合激子的极化子效应和温度依赖性

采用线性组合算符和变分方法研究了极性晶体膜中激子与表面光学（SO）声子强耦合、与体纵光学（LO）声子弱耦合体系的性质,推导出了激子诱生势的表达式,并以AgBr晶体为例进行了数值计算.结果表明：激子的诱生势不仅与电子-空穴间距离有关,而且温度与极性晶体膜厚度对激子诱生势的影响也十分显著.     

Vector classification, doublet splitting of exciton and biexciton subbands in crystals, and selection rules for transitions between them

The analysis of experimental data on absorption, reflection, luminescence in the region of exciton and biexciton phototransitions in CdS, including P-band structure, shows that there is doubled, contrary to known theory, number of free exciton and biexciton states. This discreapancy is removed in the vector model of these states presented in this paper. The selection rules for transitions between exciton (biexciton) states in crystals taking into consideration their L-T splitting are obtained. The spectra of stimulated FIR radiation on excitonic transitions in CdS, previously obtained experimentally, well fit to these selection rules.     

Surface and interface optical phonon modes and electron-phonon interaction in a multi-shell spherical system

Within the framework of the dielectric continuum model, interface optical(IO) and surface optical(SO) phonon modes and the Fr?hlich electron-IO (SO) phonon interaction Hamiltonian in a multi-shell spherical system were derived and studied. Numerical calculation on CdS/HgS/H₂O and CdS/HgS/CdS/H₂O spherical systems have been performed. Results reveal that there are two IO modes and one SO mode for the CdS/HgS/H₂O system, one SO mode and four IO modes whose frequencies approach the IO phonon frequencies of the single CdS/HgS heterostructure with the increasing of the quantum number l for CdS/HgS/CdS/H₂O. It also showed that smaller l and SO phonon compared with IO phonon, have more significant contribution to the electron-IO (SO) phonon interaction. Received 16 October 2001 and Received in final form 23 January 2002 Published online 25 June 2002     

Symmetry and size effects on energy and entanglement of an exciton in coupled quantum dots

We study theoretically the essential properties of an exciton in vertically coupled Gaussian quantum dots in the presence of an external magnetic field. The ground state energy of a heavy-hole exciton is split into four energy levels due to the Zeeman effect. For the symmetrical system, the entanglement entropy of the exciton state can reach a value of 1. However, for a system with broken symmetry, it is close to zero. Our results are in good agreement with previous studies.     

温度和极化子效应对准二维强耦合激子基态的影响

采用Huybrechts线性组合算符和Lee-Low-Pines变换法研究了温度和极化子效应对量子阱中激子与界面光学声子强耦合又与体纵光学声子弱耦合体系基态的影响，推导出激子基态的诱生势和基态能量的移动的表达式. 以AgCl/AgBr量子阱为例进行了数值计算，结果表明，由激子-界面光学声子强耦合所产生的激子基态的诱生势和基态能量的移动随温度的升高而增大，而由激子-体纵光学声子弱耦合所产生的激子基态的诱生势和基态能量的移动随温度的升高而减小.     

温度和极化子效应对准二维强耦合激子基态的影响

采用Huybrechts线性组合算符和Lee-Low-Pines变换法研究了温度和极化子效应对量子阱中激子与界面光学声子强耦合又与体纵光学声子弱耦合体系基态的影响,推导出激子基态的诱生势和基态能量的移动的表达式. 以AgCl/AgBr量子阱为例进行了数值计算,结果表明,由激子-界面光学声子强耦合所产生的激子基态的诱生势和基态能量的移动随温度的升高而增大,而由激子-体纵光学声子弱耦合所产生的激子基态的诱生势和基态能量的移动随温度的升高而减小. 关键词： 量子阱 强耦合激子 极化子效应 温度依赖性     

Surface and near-surface passivation, chemical reaction, and Schottky barrier formation at ZnO surfaces and interfaces

Using a combination of depth-resolved cathodoluminescence spectroscopy, electronic transport, and surface science techniques, we have demonstrated the primary role of native defects within ZnO single crystals as well as native defects created by metallization on metal-ZnO Schottky barrier heights and their ideality factors. Native defects and impurities resident within the ZnO depletion region as well as defects extending into the bulk from the intimate metal-ZnO interface contribute to barrier thinning of, carrier hopping across, and tunneling through these Schottky barriers. Chemical reactions at clean ZnO-metal interfaces lead to metal-specific eutectic or oxide formation with pronounced transport effects. These results highlight the importance of bulk crystal quality, surface cleaning, metal interaction, and post-metallization annealing for controlling Schottky barriers.     

Strong coupling between Tamm plasmon and QW exciton

We report on the strong coupling between a Tamm plasmon mode and excitons from inorganic quantum wells. The sample is formed by an AlAs/GaAlAs Bragg reflector containing InGaAs QWs in its high refractive index layers, on top of which a thin silver film is deposited. Angle resolved reflectometry experiments at low temperature (77 K) show a clear anticrossing in the dispersion relations, evidencing the strong coupling regime. The Rabi splitting amounts to 11.5 meV. Emission from low and high energy Tamm plasmon/exciton polaritons is also demonstrated. Experimental data are in very good agreement with transfer matrix simulations.     

Enhanced multiple exciton generation in amorphous silicon nanowires and films

ABSTRACT

Multiple exciton generation (MEG) in nanometer-sized hydrogen-passivated silicon nanowires (NWs), and quasi two-dimensional nanofilms depends strongly on the degree of the core structural disorder as shown by the perturbative many-body quantum mechanics calculations based on the density functional theory simulations. Working to the second order in the electron–photon coupling and in the screened Coulomb interaction, we calculate quantum efficiency (QE), the average number of excitons created by a single absorbed photon, in the Si₂₉H₃₆ quantum dots (QDs) with crystalline and amorphous core structures, simple cubic three-dimensional arrays constructed from these QDs, crystalline and amorphous NWs, and quasi two-dimensional silicon nanofilms, also both crystalline and amorphous. Efficient MEG with QE ranging from 1.3 up to 1.8 at the photon energy of about 3E_g, where E_g is the electronic gap, is predicted in these nanoparticles except for the crystalline NW and crystalline film where QE ? 1. MEG in the amorphous nanoparticles is enhanced by the electron localisation due to structural disorder. Combined with the lower gaps, the nanometer-sized amorphous silicon NWs and films are predicted to have effective carrier multiplication within the solar spectrum range.     

Exciton luminescence and many-body effect of monolayer WS2 at room temperature

Monolayer transition metal dichalcogenides favor the formation of a variety of excitonic quasiparticles, and can serve as an ideal material for exploring room-temperature many-body effects in two-dimensional systems. Here, using mechanically exfoliated monolayer WS₂ and photoluminescence (PL) spectroscopy, exciton emission peaks are confirmed through temperature-dependent and electric-field-tuned PL spectroscopy. The dependence of exciton concentration on the excitation power density at room temperature is quantitatively analyzed. Exciton concentrations covering four orders of magnitude are divided into three stages. Within the low carrier concentration stage, the system is dominated by excitons, with a small fraction of trions and localized excitons. At the high carrier concentration stage, the localized exciton emission from defects coincides with the emission peak position of trions, resulting in broad spectral characteristics at room temperature.