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1.
Transparent indium-tin-oxide (ITO) anode surface was modified using O3 plasma and organic ultra-thin buffer layers were deposited on the ITO surface using 13.56 MHz rf plasma polymerization technique. A plasma polymerized methyl methacrylate (ppMMA) ultra-thin buffer layer was deposited between the ITO anode and hole transporting layer (HTL). The plasma polymerization of the buffer layer was carried out at a homemade capacitively coupled plasma (CCP) equipment. N,N′-Diphenyl-N,N′-bis(3-methylphenyl)-1,1′-diphenyl-4,4′-diamine (TPD) as HTL, Tris(8-hydroxy-quinolinato)aluminum (Alq3) as both emitting layer (EML)/electron transporting layer (ETL), and aluminum layer as cathode were deposited using thermal evaporation technique. Electroluminescence (EL) efficiency, operating voltage and stability of the organic light-emitting devices (OLEDs) were investigated in order to study the effect of the plasma surface treatment of the ITO anode and role of plasma polymerized methyl methacrylate as an organic ultra-thin buffer layer.  相似文献   

2.
Based on indium tin oxide (ITO)/N,N′diphenyl-N-N′-di(m-tdyl) benzidine (TPD)/Alq3/Al structure, flexible OLEDs on polyethylene terephthalate (PET) substrates were fabricated by physical vapor deposition (PVD) method. Tris(8-hydroxyquinoline)aluminum (Alq3) films were deposited at 90, 120 and 150 °C to examine the influence of the deposition temperature on the structure and performance of OLEDs. Electroluminescence (EL) spectra and current-voltage-luminance (I-V-L) characteristics of the OLEDs were examined. It was found that the device fabricated at a high temperature had a higher external efficiency and longer lifetime. Atomic force microscope (AFM) was adopted to characterize the surface morphology of ITO/TPD/Alq3. The higher uniform morphology of the Alq3 formed at high temperature might contribute to the performance improvement of the OLEDs.  相似文献   

3.
Novel types of multilayer color-tunable organic light-emitting devices (OLEDs) with the structure of indium tin oxide (ITO)/N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/aluminum (III)bis(2-methyl-8-quinolinato)4-phenylphenolato (BAlq)/tris-(8-hydroxyquinolate)-aluminum (Alq3)/Mg:Ag were fabricated. By inserting a thin layer with different thickness of a second NPB layer at the heterojunction interface of BAlq/Alq3, the emission zone of devices shifted greatly and optoelectronic characteristics underwent large variation. Although BAlq was reported as a very good hole-blocking and blue-light-emission material, results of measurements in this paper suggested that a certain thickness of NPB layer between BAlq and Alq3 plays an important role to modify device characteristics, which can act as recombination-controlling layer in the multilayer devices. It also provides a simple way to fabricate color-tunable OLEDs by just changing the thickness of this “recombination-controlling” layer rather than doping by co-evaporation.  相似文献   

4.
In this paper, the roles of zinc selenide (ZnSe) sandwiched between organic layers, i.e. organic/ZnSe/aluminum quinoline (Alq3), have been studied by varying device structure. A broad band emission was observed from ITO/poly(N-vinylcarbazole)(PVK)(80 nm)/ZnSe(120 nm)/ Alq3(15 nm)/Al under electric fields and it combined the emissions from the bulk of PVK, ZnSe and Alq3, however, emission from only Alq3 was observed from trilayer device ITO/N,N-bis-(1-naphthyl)-N,N-diphenyl-1, 1-biphenyl-4, 4-diamine (NPB) (40 nm)/ZnSe(120 nm)/ Alq3(15 nm)/Al. Consequently the luminescence mechanism in the ZnSe layer is suggested to be charge carrier injection and recombination. By thermal co-evaporating Alq3 and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB), we get white light emission with a Commission Internationale de l’E clairage (C.I.E) co-ordinates of (0.32, 0.38) from device ITO/PVK(80 nm)/ZnSe(120 nm)/ Alq3:DCJTB(0.5 wt% DCJTB)(15 nm)/Al at 15 V and the device performs stably with increasing applied voltages.  相似文献   

5.
A model organic light-emitting diodes (OLEDs) with structure of tris(8-hydroxyquinoline) aluminum (Alq3)/N,N′-diphenyl-N,N′-bis[1-naphthy-(1,1′-diphenyl)]-4,4′-diamine (NPB)/indium tin oxide (ITO)-coated glass was fabricated for diffusion study by ToF-SIMS. The results demonstrate that ToF-SIMS is capable of delineating the structure of multi-organic layers in OLEDs and providing specific molecular information to aid deciphering the diffusion phenomena. Upon heat treatment, the solidity or hardness of the device was reduced. Complicated chemical reaction might occur at the NPB/ITO interface and results in the formation of a buffer layer, which terminates the upper diffusion of ions from underlying ITO.  相似文献   

6.
We used N,N′-bis-(1-naphthyl)-N,N′-1-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB), 4,4′-N,N′-dicarbazole-biphenyl (CBP) and tris(8-hydroxyquinoline) aluminum (Alq3) to fabricate tri-layer electroluminescent (EL) device (device structure: ITO/NPB/CBP/Alq3/Al). In photoluminescence (PL) spectra of this device, the emission from NPB shifted to shorter wavelength accompanying with the decrease of its emission intensity and moreover the emission intensity of Alq3 increased relatively with the increase of reverse bias voltage. The blue-shifted emission and the decrease in emission intensity of NPB were attributed to the polarization and dissociation of NPB excitons under reverse bias voltage. The increase of emission intensity of Alq3 benefited from the recombination of electrons (produced by the dissociation of NPB exciton) and holes (injected from the Al cathode).  相似文献   

7.
In a device structure of ITO/hole-injection layer/N,N′-biphenyl-N,N′-bis-(1-naphenyl)-[1,1′-biphthyl]4,4′-diamine(NPB)/tris(8-hydroxyquinoline)aluminum(Alq3)/Al, we investigated the effect of the hole-injection layer on the electrical characteristics and external quantum efficiency of organic light-emitting diodes. Thermal evaporation was performed to make a thickness of NPB layer with a rate of 0.5–1.0 Å/s at a base pressure of 5 × 10−6 Torr. We measured current–voltage characteristics and external quantum efficiency with a thickness variation of the hole-injection layer. CuPc and PVK buffer layers improve the performance of the device in several aspects, such as good mechanical junction, reducing the operating voltage, and energy band adjustment. Compared with devices without a hole-injection layer, we found that the optimal thickness of NPB was 20 nm in the device structure of ITO/NPB/Alq3/Al. By using a CuPc or PVK buffer layer, the external quantum efficiencies of the devices were improved by 28.9% and 51.3%, respectively.  相似文献   

8.
Organic light-emitting diodes (OLEDs) have been fabricated which consist of N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine) (TPD), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), and tris(8-hydroxyquinoline) aluminum (Alq3). Four emission peaks located at about 401 nm, 425 nm, 452 nm and 480 nm have been obtained in the electroluminescence (EL) spectra of these devices. The former two emissions originate from the exciton emission of TPD molecular. The last two emissions could be attributed to local (LOC) exiplex emission and charge transfer (CT) exiplex emission at the interface between TPD and BCP layers, respectively.  相似文献   

9.
2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN) based fluorescent blue organic light-emitting diodes (OLEDs) are demonstrated. With MADN as emitting layer, experiments indicate that thick MADN (40–60 nm) is preferable for constructing efficient blue OLED. With MADN as hole-transport and emitting layer and tris(8-hydroxy-quinolinato)aluminium (Alq3) as electron-transport layer, the OLED electroluminescent characteristics show a mixture emission of MADN and Alq3 with Commission Internationale d'Eclairage (CIE) color coordinates of (0.25, 0.34), indicating feasible hole transporting in MADN. Using 4,7-diphenyl-1,10-phenanthroline (BPhen) replacing Alq3 as electron-transport layer, the OLED shows deep blue emission with a maximum luminous efficiency of 4.8 cd/A and CIE color coordinates of (0.16, 0.09). The hole transport characteristics of MADN are further clarified by constructing hole-only device and performing impedance spectroscopy analysis. The results indicate that MADN shows superior hole-transport ability which is almost comparable to typical hole-transport material of N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-benzidine (NPB), suggesting a promising application for constructing efficient blue OLED with integrated hole-transport layer and emitting layer.  相似文献   

10.
This study presents a new design that uses a combination of a graded hole transport layer (GH) structure and a gradually doped emissive layer (GE) structure as a double graded (DG) structure to improve the electrical and optical performance of white organic light-emitting diodes (WOLEDs). The proposed structure is ITO/m-MTDATA (15 nm)/NPB (15 nm)/NPB: 25% BAlq (15 nm)/NPB: 50% BAlq (15 nm)/BAlq: 0.5% Rubrene (10 nm)/BAlq: 1% Rubrene (10 nm)/BAlq: 1.5% Rubrene (10 nm)/Alq3 (20 nm)/LiF (0.5 nm)/Al (200 nm). (m-MTDATA: 4,4′,4″ -tris(3-methylphenylphenylamino)triphenylamine; NPB: N,N′-diphenyl-N,N′-bis(1-naphthyl-phenyl)-(1,1′-biphenyl)-4,4′-diamine; BAlq: aluminum (III) bis(2-methyl-8-quinolinato) 4-phenylphenolate; Rubrene: 5,6,11,12-tetraphenylnaphthacene; Alq3: tris-(8-hydroxyquinoline) aluminum). By using this structure, the best performance of the WOLED is obtained at a luminous efficiency at 11.8 cd/A and the turn-on voltage of 100 cd/m2 at 4.6 V. The DG structure can eliminate the discrete interface, and degrade surplus holes, the electron-hole pairs are efficiently injected and balanced recombination in the emissive layer, thus the spectra are unchanged under various drive currents and quenching effects can be significantly suppressed. Those advantages can enhance efficiency and are immune to drive current density variations.  相似文献   

11.
The efficiencies of red organic light-emitting diode (OLED) using tris-(8-hydroxy-quinoline)aluminum (Alq3) as host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant were greatly increased by adding a small amount (0.3 wt%) of Ir compound, iridium(III) bis(3-(2-benzothiazolyl)-7-(diethylamino)-2H-1-benzopyran-2-onato-N′,C4) (acetyl acetonate) (Ir(C6)2(acac)), as a sensitizer. The device has a sandwiched structure of indium tin oxide (ITO)/4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (T-NATA) (40 nm)/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′ diamine (NPB) (40 nm)/Alq3:DCJTB (0.7 wt%):Ir(C6)2(acac) (0.3 wt%) (40 nm)/Alq3 (40 nm)/LiF (1 nm)/Al (120 nm). It can be seen that the current efficiencies of this device remained almost (13.8±1) cd/A from 0.1 to 20,000 cd/m2 and the Commission International d’Eclairage (CIE) coordinates at (0.60, 0.37) in the range of wide brightness. The significant improvement was attributed to the sensitization effect of the doped Ir(C6)2(acac), thus the energy of singlet and triplet excitons is simultaneously transferred to the DCJTB.  相似文献   

12.
By using the Langmuir–Blodgett (LB) technique, well-defined molecular layers of 2,9,16-tri(tert-butyl)-23-(10-hydroxydecyloxy)phthalocyanine were fabricated. These LB films have been employed to modify an anode surface of organic light-emitting devices. The insertion of LB films between an indium tin oxide (ITO) and hole-transport layers leads to an increase in device efficiency as a result of an improvement of the balanced carrier injection. An external quantum efficiency of 0.88% and a brightness of 10840 cd/m2 for a device with a structure of ITO/two LB layers/N,N-diphenyl-N,N-bis(3-methylphenyl)-1,1-biphenyl-4,4-diamine (TPD)/tris(8-hydroquinolinato)aluminium (Alq3)/Al were obtained, while the external quantum efficiency and brightness for the device without LB layers of ITO/TPD/Alq3/Al were 0.51% and 5744 cd/m2, respectively. PACS 68.47.Pe; 78.60.Fi; 85.60.Jb  相似文献   

13.
High efficiency red organic light-emitting devices (OLEDs) with several dotted-line doped layers (DLDLs) were fabricated by using an ultra-high vacuum organic molecular-beam deposition system. The red OLEDs consisted of indium-tin-oxide (ITO)/N, N′-diphenyl-N, N′-bis(1-naphthyl)-(1, 1′-biphenyl)-4, 4′-diamine (α-NPD): 40 nm/tris(8-hydroxyquinoline)aluminum (Alq3)+4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetra-methyljuloldyl-9-enyl)-4H-pyran (DCJTB); 3%wt.: x nm/(Alq3+DCJTB; 3%wt./ Alq3)n−1: (30−x) nm/ Alq3: 30 nm/Mg:Ag with n of 2, 4, 6, or 8, and x=30/(2n−1). The luminance yield of the device with 8 DLDLs was 75% higher than that of the device with a common doped layer. This was attributed to more formation of the excitons formed in a wider region resulting from the existence of the DLDLs. The dominant mechanisms of the dopant emission for the devices with DLDLs were described on the basis of the sequential carrier trapping process.  相似文献   

14.
A blue shifted photoluminescent emission in bis(2-(2′-hydroxyl phenyl)benzthiazolate)zinc (II) complex, ZBZT, arises out of the dimeric structure, typical of the localized electron density around the non-bridged ligand in the excited state of the complex. An average decay lifetime of 4.8 and 3.0 ns for the ligand and the complex, respectively indicates an energy transfer from the ligand to the metal. A PL quantum efficiency of about ?ZBZT=0.45 in DMF solution is observed, in comparison to the Alq3, complex, ?Alq3=0.116. Semi empirical ZINDO/S-SCF-CI calculations support the dominance of non-bridged ligand moiety in controlling the photoluminescent properties. An unusually broad white light (FWHM ∼220 nm) electroluminescent emission in the two layer device structure brings out the features of an exciplex formation between the active layer ZBZT/TPD interface, which is studied at different current densities. Such a broadened emission is verified for different thicknesses of the active layer substantiating the role of exciplex formation.  相似文献   

15.
This paper presents organic light emitting diodes (OLEDs) which were fabricated by using undoped 9,10-di(2-naphthyl)anthracene (ADN) as the emitting layer, N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-amine (TPD) as the hole transporting layer, and one of tris-(8-hydroxy-quinolinato) aluminum (Alq3), 4,7-diphenyl-1,10-phenanthroline (Bphen) and 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole (PBD) as the electron transporting layer. By optimization for the thickness of device, efficient pure blue organic light emitting diodes were obtained, which is attributed to the synergy of both the hole transporting layer and the electron transporting layer.  相似文献   

16.
Organic light-emitting diodes were fabricated with a structure of indium-tin-oxide (ITO)/poly(N-vinylcarzole)(PVK):4-(dicyanom-ethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB)/8-tris-hydroxyquinoline aluminum (Alq3)/lithium fluoride (LiF)/Al. The energy transfer from PVK to Alq3 then to DCJTB and the charge trapping processes were investigated by employing the photoluminescence (PL) and electroluminescence (EL) spectra. With increasing thickness of the Alq3 layer, the PL and EL emission from PVK were decreased gradually, which indicated that the effective energy transfer occurred from PVK to Alq3 and then from Alq3 to DCJTB. At the same time, we found that the exciton recombination zone could be adjusted by controlling the Alq3 layer thickness and the applied voltages. The effects of different DCJTB concentrations on the optical and electrical characteristics of the devices were investigated, and an obvious red-shift was observed with the DCJTB dopant concentrations increasing in the PL and EL spectra.  相似文献   

17.
White organic light-emitting devices (WOLEDs) with Mg:Ag/Alq3/Alq3:DCJTB/Alq3/DPVBi/α-NPD/ITO and Mg:Ag/Alq3/DPVBi:DCJTB/Alq3/DPVBi/α-NPD/ITO structures were fabricated with three primary-color emitters of red, green, and blue by using organic molecular-beam deposition. Electroluminescence spectra showed that the dominant white peak for the WOLEDs fabricated with host red-luminescence Alq3 and DPVBi layers did not change regardless of variations in the current. The Commission Inernationale de l'Eclairage (CIE) chromaticity coordinates for the two WOLEDs were stable, and the WOLEDs at 40 mA/cm2 with luminances of 690 and 710 cd/cm2 showed an optimum white CIE chromaticity of (0.33, 0.33). While the luminance yield of the WOLED fabricated with a host red-luminescent Alq3 emitting layer below 30 mA/cm3 was larger than that of the WOLED fabricated with a DPVBi layer, above 30 mA/cm2, the luminance yield of the WOLED fabricated with the DPVBi layer was higher than that of the WOLED with the Alq3 layer and became more stable with increasing current density. These results indicate that WOLEDs fabricated with a host red-luminescence DPVBi layer without any quenching behavior hold promise for potential applications in backlight sources in full-color displays.  相似文献   

18.
Organic light emitting diodes (OLEDs) of ITO/PEDOT:PSS/TPD:Alq3:C60/Al with different C60 concentrations (0-6.0 wt.%) have been fabricated. The physical parameters including electrical and optical properties of the samples have been measured by Luminance-current-voltage (L-I-V) characteristics and optical absorbance. The current-voltage characteristics indicate that field-emission tunneling injection dominates in the diodes at high applied voltages. It is found that with increasing the concentration of C60, the injection barrier for holes slightly reduces and the hole’s mobility increases over two orders of magnitude. Also, electroluminescence enhances with the presence of C60 in the blend; optimum current efficiency occurs at 3 wt% C60. The method provides a simple way of increasing the efficiency of OLEDs.  相似文献   

19.
In this paper, a new white organic light-emitting device (WOLED) with multilayer structure has been fabricated. The structure of devices is ITO/N, N-bis-(1-naphthyl)-N, N-diphenyl-1, 1′-biphenyl-4, 4′-diamine (NPB) (40 nm)/NPB: QAD (1%): DCJTB (1%) (10 nm) /DPVBi (10 nm) /2, 9-dimethyl, 4, 7-diphenyl, 1, 10-phenanthroline (BCP) (d nm)/tris-(8-hydroxyquinoline) aluminium (Alq3)(50-d nm)/LiF (1 nm)/Al (200 nm). In our devices, a red dye 4-(dicyanomethylene)-2-t-butyl-6 (1, 1, 7, 7-tetramethyl julolidyl-9-enyl)-4H-pyran (DCJTB) and a green dye quinacridone (QAD) were co-doped into NPB. The device with 8 nm BCP shows maximum luminance of 12 852 cd/m2 at 20 V. The current efficiency and power efficiency reach 9.37 cd/A at 9 V and 3.60 lm/W at 8 V, respectively. The thickness of the blocking layer permit the tuning of the device spectrum to achieve a balanced white emission with Commission International de’Eclairage (CIE) chromaticity coordinates of (0.33,0.33). The CIE coordinates of device change from (0.3278, 0.3043) at 5 V to (0.3251, 0.2967) at 20 V that are well in the white region, which is largely insensitive to the applied bias.  相似文献   

20.
We have systematically investigated the influence of UV ozone and acid (HCl) treatments (separate and combined) of the surface of indium tin oxide (ITO) on the ITO parameters and the performance of organic light-emitting diodes (OLEDs) fabricated on the treated substrates. The ITO substrates were characterized by Hall measurements, Seebeck coefficient measurements and surface-probe microscopy. After ITO characterization, two types of devices (ITO/NPB/rubrene/Alq3/LiF/Al and ITO/TPD/rubrene/Alq3/LiF/Al) were fabricated on the differently treated substrates. It was found that in both cases the optimal treatment was HCl followed by UV ozone, which resulted in the lowest turn-on voltage and the highest luminous efficiency. The maximum luminous efficiency in the ITO/NPB/rubrene/Alq3/LiF/Al OLED with HCl followed by UV ozone treatment was 2.15 lm/W compared to 1.46 lm/W with UV ozone treatment only. PACS 81.65Cf; 85.60.Jb  相似文献   

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