Contact effects on the magnetoresistance of finite semiconductors

We propose a new theoretical method to study galvanomagnetic effects in bounded semiconductors. The general idea of this method is as follows. We consider the electron temperature distribution and the electric potential as consisting of two terms, one of which represents the regular solution of the energy balance equation obtained from the Boltzmann transport equation at steady-state conditions and the Maxwell equation, while the other is the effect of the specimen size that is significant near the contacts (the boundary layer function). With the distribution of the electric potential at the contacts and the electron temperature distribution at the surface of the sample taken into account, we find that the magnetoresistance is different from the one in the standard theory of galvanomagnetic effects in boundless media. We show that, besides the usual quadratic dependence on the applied magnetic field B, the magnetoresistance can exhibit a linear dependence on B under certain conditions. We obtain new formulas for the linear and quadratic terms of the magnetoresistance in bounded semiconductors. This linear contribution of the magnetic field to the magnetoresistance is essentially due to the spatial dependence of the potential at the electric contacts. We also discuss the possibility of obtaining the distribution of the electric potential at the contacts from standard magnetoresistance experiments. Because the applied magnetic field acts differently on carriers with different mobilities, a redistribution of the electron energy occurs in the sample and thus, the Ettingshausen effect on the magnetoresistance must be considered in bounded semiconductors.     

Magnetoresistance of a 2D electron gas caused by electron interactions in the transition from the diffusive to the ballistic regime

On a high-mobility 2D electron gas we have observed, in strong magnetic fields (omega(c)tau>1), a parabolic negative magnetoresistance caused by electron-electron interactions in the regime of k(B)Ttau/ variant Planck's over 2pi approximately 1, which is the transition from the diffusive to the ballistic regime. From the temperature dependence of this magnetoresistance the interaction correction to the conductivity deltasigma(ee)(xx)(T) is obtained in the situation of a long-range fluctuation potential and strong magnetic field. The results are compared with predictions of the new theory of interaction-induced magnetoresistance.     

Effect of roughness of two-dimensional heterostructures on weak localization

The effect that a longitudinal magnetic field exerts on the transverse negative magnetoresistance by suppressing the interference quantum correction is studied in GaAs/In_xGa_l?xAs/GaAs structures with a single quantum well. It is shown that the variation in the shape of the transverse magnetoresistance curve caused by a longitudinal magnetic field depends strongly on the relation between the mean free path, the phase-breaking length, and the correlation length characterizing the roughness of the two-dimensional layer. It is shown that the experimental results allow one to estimate the parameters of large-scale and small-scale roughness of the two-dimensional layer in the structures under study. The results obtained are in good agreement with the data of probe microscopy.     

Electron magnetotransport in carbon nanotubes and negative magnetoresistance: The density matrix method

A solution (stationary and linear in electric field) to the kinetic equation for a one-electron density matrix in an arbitrary magnetic field is found for deformation-potential scattering in the approximation of a small deviation of the electron gas from equilibrium. An expression for the nanotube conductivity is obtained in the form of a sum over magnetic-quantization states. In the absence of a magnetic field, this expression coincides with the corresponding classical relations. In weak magnetic fields, the magnetoresistance of a multilayer nanotube is positive for high electron mobilities and negative for low mobilities. In intermediate fields, it reverses sign with increasing field strength. The magnetoresistance of a one-layer nanotube is always positive.     

Mechanism of formation of a negative magnetoresistance region in granular high-temperature superconductors

The field dependences of the magnetoresistance of Bi_1.8Pb_0.3Sr_1.9Ca₂Cu₃O _x samples with different densities, which have a foam microstructure and exhibit different diamagnetic responses, were studied at 77.4 K to identify the mechanism responsible for the formation of a negative magnetoresistance region in granular high-temperature superconductors. A region with negative magnetoresistance was found to exist in samples with magnetizations highest in absolute magnitude. This behavior finds a reasonable interpretation as due to the effect exerted by dipole moments of high-temperature superconductor grains on the effective intergranular field. The strength of this effective field has been estimated.     

Interaction-induced magnetoresistance: from the diffusive to the ballistic regime

We study interaction-induced quantum correction deltasigma(alphabeta) to the conductivity tensor of electrons in two dimensions for arbitrary Ttau, where T is the temperature and tau the transport mean free time. A general formula is derived, expressing deltasigma(alphabeta) in terms of classical propagators ("ballistic diffusons"). The formalism is used to calculate the interaction contribution to the magnetoresistance in a classically strong transverse field and smooth disorder in the whole range of temperatures from the diffusive (Ttau<1) to the ballistic (Ttau greater, similar 1) regime.     

Magnetoresistance effect obtained from the band structure of a crystalline solid

This paper demonstrates that the Lorentz equation combined with the equation for electron drift in an external magnetic field gives a definite value for the relaxation time of the electron motion in a crystalline solid in the aforementioned field. The main result is that the product of the relaxation time and the strength of the magnetic field remain constant and are dependent only on the structure of the energy band of the solid. Free electrons, or nearly free electrons, result in the diagonal components of the tensor for magnetoresistance tending to zero for all electron states. For the electrons in a crystal lattice, the relaxation time considered along the cross-section line in the reciprocal space of a plane normal to the magnetic field and the surface of constant energy become highly anisotropic quantities.     

惰性物质等离子体物态方程研究

对高温高压下惰性等离子体的电离度和物态方程，给出了一种基于Thomas-Feimi(TF)统计模型的简化计算新方法，即首先对TF模型电离势的数值结果进行函数逼近，得出近似计算电离势的简单解析函数；在局部热动平衡情况下，假定离子数密度n(Z^*)为Z^*的连续函数，再由Debye-Hückel修正的 Saha 方程，得出了一个便于数值求解的电离度的近似计算公式，从而建立了一种惰性等离子体物态方程的简化模型，并对氦、氖、氩三种惰性物质等离子体进行了计算.计算结果与其他文献计算结果和实验值均符合很好.所提出的简单模型也适用于计算混合物物态方程，在高温高密度强电离等离子体领域将有更为广阔的应用前景.     

Space-charge-limited magnetoresistance in organic semiconductors

We present a two-site model for large magnetic field effect on current of nonmagnetic organic semiconductor, based on bipolaron formation in the presence of both hyperfine field and an applied magnetic field. Under the framework of space-charge-limited current, we derived our current density and magnetoresistance expression. The magnetoresistance fit well with the Lorentzian empirical law. We discuss all parameters involved in, and elucidate the origin of positive and negative magnetoresistance under our model.     

Negative magnetoresistance in the regime of hopping conduction through <Emphasis Type="Italic">p</Emphasis> states at quantum dots

The magnetoresistance in the system of quantum dots with hopping conduction and filling factor 2 < ν < 3 in the limit of small quantum dots has been considered. In this case, hopping conduction is determined by p states. It has been shown that the system exhibits negative magnetoresistance associated with a change in the wavefunctions of p states in a magnetic field. This mechanism of magnetoresistance is linear in magnetic field in a certain range of fields and can compete with the known interference mechanism of magnetoresistance. The magnitude of this magnetoresistance is independent of the temperature at fairly low temperatures and increases with a decrease in the size of a quantum dot.     

Magnetoresistance of a ferromagnetic metal nanocomposite with nonspherical granules

It is experimentally established that the magnetoresistance of a Fex(SiO₂)_1?x nanocomposite (x≈0.6) in a strong magnetic field is described by a logarithmic function of the field strength. This field dependence is inconsistent with the well-known theory of the giant magnetoresistance in ferromagnetic nanocomposites. A model is developed according to which the unusual behavior of the magnetoresistance is explained by nonsphericity of the material grains, exhibiting a broad variety of shapes. The experimental results agree with conclusions and predictions of the proposed model.     

4 OPW calculations of the low-field galvanomagnetic coefficients for impurities in aluminium

Tabulated pseudopotentials are used to obtain the 4 OPW wave functions and Fermi surface of Al and the scattering potentials of Ge, Mg, Zn, and Ga impurities. The anisotropic relaxation time is calculated in Born approximation and iterating the Boltzmann equation for zero magnetic field. The coefficients of Hall effect, transverse and longitudinal magnetoresistance are described by Fermi surface integrals. Without adjusted parameters our numerical results agree surprisingly well with experiment.     

p型半导体金刚石膜的磁阻效应

在p型硅(100)衬底上,采用衬底负偏压微波等离子体CVD方法进行了p型异质外延金刚石膜的生长.用O₂等离子体刻蚀技术将金刚石膜刻蚀成长条形,利用四探针法在0—5T的磁场范围内测量了样品的磁阻.实验结果表明,p型异质外延金刚石膜可以产生较大的磁阻.在Fuchs-Sondheimer(F-S)薄膜理论的基础上考虑晶格散射、杂质散射和表面散射,通过求解Boltzmann方程,利用并联电阻模型研究了p型异质外延金刚石膜的磁阻效应,给出了磁阻和金刚石膜厚度、迁移率、空穴密度及磁场的关系.讨论了表面散射和价带形变对p型异质外延金刚石膜磁阻的影响,初步解释了p型异质外延金刚石膜产生较大磁阻的原因 关键词： 金刚石膜 异质外延 磁阻效应 电导率     

Tunneling magnetoresistance of phase-separated manganites

A simple model of phase separation is used to study the magnetoresistance of manganites in the nonmetallic state. It is assumed that the phase separation corresponds to the emergence of small ferromagnetic metallic droplets (ferrons) in a nonconducting antiferromagnetic or paramagnetic medium, with the metallic phase concentration being far from the percolation threshold. The charge transfer is accomplished by way of electron jumps between droplets. The magnetoresistance in such a system is defined both by the variation of the volume of the metal phase and by the dependence of the probabilities of electron transitions on the magnitude of the magnetic field. It is demonstrated that, in the region of low magnetic fields, the magnetoresistance is quadratic with respect to the field and decreases with temperature by the T ^?n law, where n takes values from 1 to 5 depending on the correlation between the parameters. In the high-field limit, the magnetoresistance increases abruptly with the volume of the metal phase. The crossover of the field dependence from quadratic to a stronger one may be accompanied by the emergence of a platean in the magnetoresistance. The correlation between the obtained results and the available experimental data is discussed.     

Oscillations of the magnetoresistance of a two-dimensional electron gas under microwave irradiation: Influence of the irradiation frequency

We present measurements of the magnetoresistance of a two-dimensional electron gas (2DEG) under continuous microwave as a function of the irradiation frequency. In a previous work by Simovič et al. [Phys. Rev. B 71 (2005) 233303], the magnetoresistance under microwave was shown to be modulated by oscillations of large amplitude that are periodic with magnetic field, their period and phase depending strongly on the electron density. Here we show that the phase and the amplitude of the microwave-induced oscillations also depend on the frequency of irradiation and the sign of the magnetic field.     

Anomalously large negative magnetoresistance of 1T-TaS2 at ultra low temperatures

The magnetoresistance of 1T-TaS₂ in the commensurate CDW phase was measured from 8 K down to 50 mK. Very large negative magnetoresistance was observed below 0.5 K for both transverse and longitudinal configurations of the magnetic field with respect to the current. This result is explained by Fukuyama and Yosida's theory based on the variable-range hopping in the Anderson localized states.     

Positive magnetoresistance due to impurity interactions in dilute AuCr alloys

The magnetoresistance of dilute AuCr alloys (2.3–322 at.ppm) has been measured in a wide region of temperature (5-3K) and of magnetic field (up to 60 kG).The “modified Kohler's rule” was used to extract the spin dependent magnetoresistance (?_M) from measured total magnetoresistance.The results has shown that, except for the most dilute specimen, ?_M includes explicitly a positive component in addition to the ordinary negative magnetoresistance proportional to log (H/T). We have attributed this positive ?_M to the effect of the interactions between the Cr impurities by taking consideration of the generalized phase shift expression of magnetoresistance proposed by Soultie.     

多层膜巨磁电阻特性及电流最佳测量

测量了不同方向外磁场和温度下多层膜巨磁电阻的磁阻特性,给出了巨磁电阻模拟传感器用于电流测量的最佳磁偏置.结果表明:外磁场强度相同但方向不同,对巨磁电阻的作用效果不同,巨磁电阻饱和时,阻值与外磁场方向无关.温度不同,巨磁电阻的阻值不同,磁电阻变化率也有改变.     

Hopping magnetotransport via nonzero orbital momentum states and organic magnetoresistance

In hopping magnetoresistance of doped insulators, an applied magnetic field shrinks the electron (hole) s-wave function of a donor or an acceptor and this reduces the overlap between hopping sites resulting in the positive magnetoresistance quadratic in a weak magnetic field, B. We extend the theory of hopping magnetoresistance to states with nonzero orbital momenta. Different from s states, a weak magnetic field expands the electron (hole) wave functions with positive magnetic quantum numbers, m>0, and shrinks the states with negative m in a wide region outside the point defect. This together with a magnetic-field dependence of injection/ionization rates results in a negative weak-field magnetoresistance, which is linear in B when the orbital degeneracy is lifted. The theory provides a possible explanation of a large low-field magnetoresistance in disordered π-conjugated organic materials.