Synthesis and characterization of sprayed Zn-doped polycrystalline CuInS2 thin films

Copper indium disulphide (CuInS₂) is an efficient absorber material for photovoltaic applications. In this work Zn (0.02 and 0.03 M) doped CuInS₂ thin films are (Cu/In = 1.25) deposited onto glass substrates in the temperature range 300–400 °C. XRD patterns depict, Zn-doping facilitates the growth of CuInS₂ thin films along (1 1 2) preferred plane and other characteristic planes. Optical studies show, 90% of light transmission occurs in the IR regions; hence Zn-doped CuInS₂ can be used as an IR transmitter. The absorption coefficient in the UV–vis region is found to be in the order of 10⁴–10⁵ cm⁻¹. Optical band gap energies increase with increase of temperatures (0.02 M – (1.93–2.05 eV) and 0.03 M – (1.94–2.04 eV)). Well defined, broad Blue and Green band emissions are exhibited. Resistivity study reveals the deposited films exhibit semiconducting nature. Zn species can be used as a donor and acceptor impurity in CuInS₂ films to fabricate efficient solar cells and photovoltaic devices.     

Structural and optical characterization of Sb-doped CuInS2 thin films grown by vacuum evaporation method

Structural, electrical and optical properties of Sb-doped CuInS₂ thin films grown by single source thermal evaporation method were studied. The films were annealed from 100 to 500 °C in air after the evaporation. The X-ray diffraction spectra indicated that polycrystalline CuInS₂ films were successfully obtained by annealing above 200 °C. This temperature was lower than that of non-doped CuInS₂ films. Furthermore, We found that the Sb-doped CuInS₂ thin films became close to stoichiometry in comparison with non-doped CuInS₂ thin films. The Sb-doped samples annealed above 200 °C has bandgap energy of 1.43–1.50 eV.     

Effect of cycle numbers on the structural,linear and nonlinear optical properties in Fe2O3 thin films deposited by SILAR method

Fe₂O₃ thin films were deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrates at different cycle numbers to investigate structural, linear and nonlinear optical properties. X-Ray Diffraction (XRD) analysis revealed that the Fe₂O₃ thin films have a non-crystalline nature. The morphological properties of the films were investigated by Field Emission-Scanning Electron Microscopy (FE-SEM) and the results show that the films’ surfaces are porous. The linear and nonlinear optical parameters were evaluated and analyzed by using transmittance and absorbance measurements. For these measurements, UV–Vis spectroscopy at room temperature was used. The refractive index values were calculated in the range of 1.45–3.23 for visible region (400–700 nm). Obtained results reveal that direct optical band gap changed between 2.62 and 2.68 eV and indirect optical band gap changed between 1.67 and 1.77 eV. Additionally, optical electronegativity, optical dielectric constants, surface and volume energy loss functions, nonlinear refractive index, linear optical susceptibility, third-order nonlinear optical susceptibility, optical and electrical conductivity, and loss tangent values were calculated and discussed in detail. It was found that each parameter studied is dependent on the cycle numbers. Also, it can be stated that Fe₂O₃ thin films are promising candidate for solar cells and optoelectronic device technology.     

Fabrication of nanostructured CuInS2 thin films by ion layer gas reaction method

CuInS₂ thin films were prepared by a two-stage ion layer gas reaction (ILGAR) process in which the Cu and In precursors were deposited on glass substrate by using a simple and low-cost dip coating technique and annealed in H₂S atmosphere at different temperatures. The influence of the annealing temperature (250-450 °C) on the particle size, crystal structure and optical properties of the CuInS₂ thin films was studied. Transmission electron microscopy revealed that the particle radii varied in the range 6-21 nm with annealing. XRD and SAED patterns indicated polycrystalline nature of the nanoparticles. The optical band gap (E_g) varied from 1.48 to 1.56 eV with variation of particle size. The variation of Urbach tail with temperature indicated higher density of the defects for the films annealed at lower temperature. From the Raman study, it was observed that the FWHM of the A₁ mode at ∼292 cm⁻¹ corresponding to the chalcopyrite phase of CuInS₂ decreased with increasing annealing temperature.     

Preparation of CuInS2 thin films by metal-organic decomposition

Metal-organic decomposition (MOD) technique has been developed as a low cost thin film CuInS₂ preparation method for solar cell application. XRD and Raman spectra measurement revealed that deposited films contain CuInS₂. Stoichiometric films with a bandgap of 1.53 eV and an FWHM of 0.45° were obtained from a solution with Cu/In=1.5.     

Evolution of structural and optical properties of rutile TiO2 thin films synthesized at room temperature by chemical bath deposition method

Nanocrystalline thin films of TiO₂ were prepared on glass substrates from an aqueous solution of TiCl₃ and NH₄OH at room temperature using the simple and cost-effective chemical bath deposition (CBD) method. The influence of deposition time on structural, morphological and optical properties was systematically investigated. TiO₂ transition from a mixed anatase–rutile phase to a pure rutile phase was revealed by low-angle XRD and Raman spectroscopy. Rutile phase formation was confirmed by FTIR spectroscopy. Scanning electron micrographs revealed that the multigrain structure of as-deposited TiO₂ thin films was completely converted into semi-spherical nanoparticles. Optical studies showed that rutile thin films had a high absorption coefficient and a direct bandgap. The optical bandgap decreased slightly (3.29–3.07 eV) with increasing deposition time. The ease of deposition of rutile thin films at low temperature is useful for the fabrication of extremely thin absorber (ETA) solar cells, dye-sensitized solar cells, and gas sensors.     

使用硫化物纳米前驱物墨水法制备铜铟硫薄膜

提出了一种通过反应烧结来制备CuInS₂多晶薄膜的低成本旋涂工艺路线．通过将前驱物粉末在氢气中预还原的方法来优化旋涂时使用的墨水成分,氢气还原会使前驱物纳米粉末从硫化物混合粉末转变成CuInS₂和Cu-In合金的混合物．扫描电子显微镜、电子能谱、X射线衍射以及拉曼图谱的结果表明,这种优化能极大的提高CuInS₂多晶薄膜的性能,其中包括薄膜的排列密度更高,杂质相减少,薄膜质量变得更好等．吸收光谱测得优化后的铜铟硫薄膜的带隙约为1.45 eV．     

Properties of CuIn(SxSe1−x)2 polycrystalline thin films prepared by chemical spray pyrolysis

CuIn(S_xSe_1−x)₂ thin polycrystalline films were grown by the chemical spray pyrolysis method on the glass substrate at 280-400°C. The alloy composition in the film was studied with relation to that in the splay solution. Films were characterized by X-ray diffraction, optical absorption, Raman spectroscopy, resistivity and surface morphology. The CuInSe₂-rich alloy films grown at high substrate temperature had chalcopyrite structure, while, the CuInS₂-rich films grown at low substrate temperature exhibited sphalerite structure. Optical-gap energies were smaller than that of the bulk crystal by 0.1-0.2 eV for CuInS₂-rich films. Raman spectra exhibited both CuInSe₂-like and CuInS₂-like A₁ modes, and their relative changed systematically with alloy composition.     

Influence of vacuum annealing on the structural and photoelectrochemical properties of nanocrystalline MoBi2S5 thin films

In the present paper we report structural, optical, morphological and electrical properties of thin films of MoBi₂S₅ prepared by facile self organized arrested precipitation technique (APT) from aqueous alkaline bath. X-ray diffraction study on thin films suggests orthorhombic and rhombohedral mixed phase structure. The samples are further annealed under vacuum at 373 and 473 K. The EDS pattern shows minor loss of sulphur upto 473 K. The optical absorption in visible region shows direct allowed transition with band gap variation over 1.2–1.1 eV. Post-heat treated samples exhibit n-type electrical conductivity. SEM images show uniform distribution of spherical grains with diameter ∼200 nm for as-synthesized MoBi₂S₅ thin film. The grain size increases with annealing temperature and morphology becomes more compact due to crystallization of thin film. The surface roughness deduced from AFM, was in the range of 1.29–1.92 nm. The MoBi₂S₅ thin films are employed for the fabrication of photoelectrochemical solar cells as all the samples exhibit strong absorption in visible to near IR region. Due to vacuum annealing it gives a significant enhancement of power conversion efficiency (η) upto 0.14% as compared to as-synthesized MoBi₂S₅ thin film.     

Influence of 120 MeV Si9+ ion irradiation on ZnTe semiconductor thin films

ABSTRACT

ZnTe (Zinc Telluride) is a potential semiconducting material for many optoelectronic devices like solar cells and back contact material for CdTe-based solar cells. In the present study, ZnTe thin films were prepared by thermal evaporation technique and then irradiated with 120?MeV Si⁹⁺ ions at different fluences. These films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–Visible spectroscopy techniques. XRD study confirms increased crystallinity and grain growth for post-irradiated ZnTe thin films for fluences, up to 1?×?10¹¹ ions cm^?2. However, the grain size and crystallinity decreased for higher fluence-exposed samples. SEM images confirm the observed structural properties. Modification of the surface morphology of the film due to the ion irradiation with different fluences is studied. Optical band gap of film is decreased from 2.31?eV (pristine) to 2.17?eV after irradiation of Si⁹⁺ ions.     

Effect of balanced and unbalanced magnetron sputtering processes on the properties of SnO2 thin films

A comparative study has been carried on the role of balanced magnetron (BM) and unbalanced magnetron (UBM) sputtering processes on the properties of SnO₂ thin films. The oxygen partial pressure, substrate temperature and deposition pressure were kept 20%, 700 °C and 30 mTorr, respectively and the applied RF power varied in the range of 150–250 W. It is observed that the UBM deposition causes significant effect on the structural, electrical and optical properties of SnO₂ thin films than BM as evidenced by X-ray diffraction, C-V, Spectroscopic Ellipsometer and Photoluminescence measurements. The value of band gap (E_g) of the films deposited at 150 W in UBM is found as E_g = 3.83 eV which is much higher than the value of E_g = 3.69 eV as observed in BM sputtering indicating that UBM sputtering results in good crystalline quality. Further, the C-V measurements of SnO₂ thin films deposited using UBM at high power 250 W show hysteresis with large flat band shift indicating that these thin films can be used for the fabrication of memory device. The observed results have been attributed to different mechanisms which exist simultaneously under unbalanced magnetron sputtering due to ion bombardment of growing SnO₂ thin film by energetic Ar+ ions.     

Structural-optical study of high-dielectric-constant oxide films

High-k polycrystalline Pr₂O₃ and amorphous LaAlO₃ oxide thin films deposited on Si(0 0 1) are studied. The microstructure is investigated using X-ray diffraction and scanning electron microscopy. Optical properties are determined in the 0.75-6.5 eV photon energy range using spectroscopic ellipsometry. The polycrystalline Pr₂O₃ films have an optical gap of 3.86 eV and a dielectric constant of 16-26, which increases with film thickness. Similarly, very thin amorphous LaAlO₃ films have the optical gap of 5.8 eV, and a dielectric constant below 14 which also increases with film thickness. The lower dielectric constant compared to crystalline material is an intrinsic characteristic of amorphous films.     

Effect of [Cu]/[In] ratio on properties of CuInS2 thin films prepared by successive ionic layer absorption and reaction method

CuInS₂ ternary films were prepared by a soft solution processing, i.e. successive ionic layer absorption and reaction (SILAR) method. The films were deposited on glass substrates at room temperature and heat-treated under Ar atmosphere at 500 °C for 1 h. CuCl₂ and InCl₃ mixed solutions with different ionic ratios ([Cu]/[In]) were used as cation precursor and Na₂S as the anion precursor. The effect of the [Cu]/[In] ratio in precursor solution on the structural, chemical stoichiometry, topographical, optical and electrical properties of CuInS₂ thin films was investigated. XPS results demonstrated that stoichiometric CuInS₂ film can be obtained by adjusting [Cu]/[In] ratios in solution. Chalcopyrite structure of the film was confirmed by XRD analysis. The near stoichiometric CuInS₂ film has the optical band gap E_g of 1.45 and resistivity decreased with increase of [Cu]/[In] ratios.     

Photo and thermally induced properties change in Bi/Ag/Se trilayer thin film

In this article, we have demonstrated the optical and structural properties change in Bi/Ag/Se trilayer thin films by the influence of thermal and photon energy. The trilayer films prepared by thermal evaporation technique were annealed and laser irradiated at room temperature. The X-ray diffraction study revealed the Ag₂Se phase formation and the surface morphology change is being studied by Field emission scanning electron microscopy. The optical properties of the studied films were characterized by using FTIR spectrophotometer in the wavelength range 400–1200?nm. The reduction of optical band gap by both thermal and laser irradiation is being discussed on the basis of chemical disorderness, defect states and density of localized states in the mobility gap. The Raman shift due to annealing and irradiation supports the changes in the film. The large change in optical band gap in thermal annealing is useful for memory device and waveguide fabrication.     

CuInS2 thin films obtained through the annealing of chemically deposited In2S3-CuS thin films

In this work, we report the formation of CuInS₂ thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In₂S₃) at 300 and 350 °C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS₂ (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 × 10⁻⁸ to 3 Ω⁻¹ cm⁻¹ depending on the thickness of the CuS film. CIS films showed p-type conductivity.     

Preparation and Characterization of SnS:Bi Thin Films

Thin films based on Sn-S compounds are currently of great interest because of their potential applications in optoelectronic devices including solar cells. In this work, SnS:Bi thin films are prepared using a novel procedure based on sulfurization of their metallic precursors, varying the Bi content. The effect of the synthesis conditions on the optical properties, phase, and chemical composition of the SnS:Bi thin films was studied through spectral transmittance, X-ray diffraction, and X-ray photoelectron spectroscopy. It was established from transmittance measurements that the optical gap of the deposited films varies between 1.27 and 1.37 eV depending on the Bi content. The analysis revealed that the SnS:Bi thin films grow with a mixture of several phases which include SnS, Sn₂S₃ SnS₂, and Bi₂S₃, depending on the Bi concentration. The studies also revealed that the conductivity type of the SnS:Bi films depends on the Bi content in the SnS lattice.     

Optical properties of TiO2-MnO2 thin films prepared by electron-beam evaporation

The optical constants and thickness of TiO₂-MnO₂ films (with MnO₂ concentration of 0, 1, and 5%) prepared by electron-beam evaporation are determined. A considerable dependence of the optical properties of thin TiO₂ films on the manganese concentration is observed. It is found that thin films are indirect gap semiconductors with gap width E _g = 3.43 eV (TiO₂), 2.89 eV (TiO₂-MnO₂ (1%)), and 2.73 eV (TiO₂-MnO₂ (5%)).     

Influence of thermal annealing on optical and structural properties change in Bi-doped Ge30Se70 thin films

The effect of annealing on the structural and optical properties of thermally evaporated Ge₃₀Se₇₀ and Ge₃₀Se₆₀Bi₁₀ thin films is reported in this paper. The prepared films were thermally annealed at 250°C to optimize the optical properties which can be used for the optical device fabrication. X-ray diffraction study revealed no structural transformation whereas the surface morphology changed as observed from scanning electron microscopy. The optical properties of the deposited and annealed films have been investigated by using a UV–VIS–NIR spectrophotometer in the wavelength range of 400–1100?nm. The optical band gap of the Ge₃₀Se₇₀ annealed film is found to be increased while the energy gap of the Bi-doped annealed Ge₃₀Se₆₀Bi₁₀ thin film decreased which is explained by the chemical disorderness, defect states and density of localized states in the mobility gap. The Tauc parameter and Urbach energy which measure the degree of disorder changed with the annealing process. The transmittivity increases and the absorption power decreases in the Ge₃₀Se₇₀ annealed film, whereas the reverse effect is noticed for the annealed Ge₃₀Se₆₀Bi₁₀ thin film. The irreversible nature of this change can be useful for optical recording purposes.     

连续离子层吸附反应沉积后硫化法制备柔性铜锌锡硫薄膜太阳电池

在柔性钼箔衬底上采用连续离子层吸附反应法(successive ionic layer absorption and reaction)制备ZnS/Cu2SnSx叠层结构的预制层薄膜,预制层薄膜在蒸发硫气氛、550 C温度条件下进行退火得到Cu2ZnSnS4吸收层.分别采用EDS,XRD,Raman,SEM表征吸收层薄膜的成分、物相和表面形貌.结果表明,退火后薄膜结晶质量良好,表面形貌致密.用在普通钠钙玻璃上采用相同工艺制备的CZTS薄膜表征薄膜的光学和电学性能,表明退火后薄膜带隙宽度为1.49 eV,在可见光区光吸收系数大于104cm 1,载流子浓度与电阻率均满足薄膜太阳电池器件对吸收层的要求.用上述柔性衬底上的吸收层制备Mo foil/CZTS/CdS/i-ZnO/ZnO:Al/Ag结构的薄膜太阳电池得到2.42%的效率,是目前报道柔性CZTS太阳电池最高效率.     

Preparation of Co:TiO2 thin films by crossed-beam pulsed laser deposition

Co:TiO₂ thin films were deposited using two interacting plasmas produced from different targets, TiO₂ and cobalt. By keeping constant the laser ablation conditions on the TiO₂ target and changing them on the Co target, it was possible to vary in a controlled way the Co content in the films. The cobalt plasma parameters, such as the ion kinetic energy and plasma density, were determined for each deposition condition in an attempt to correlate them with the material’s properties. The cobalt ion mean kinetic energy was varied from 36 to 789 eV, resulting in films with Co content from 1.2 up to 5.1 at.%, respectively, revealing that the cobalt content can be controlled by the Co⁺ kinetic energy. The study of the optical properties showed that the optical band gap decreased from 2.9 to 2.0 eV as the Co content increased. Raman spectroscopy was used to characterize the microstructure of the deposits, and the obtained results suggest the formation of two coexisting phases: TiO₂ in its rutile phase and CoTiO₃. It was found that as the Co⁺ energy increases, the CoTiO₃ phase develops in a greater quantity. XPS measurements confirm the Raman spectroscopy results.