空间盘绕型声学超材料的亚波长拓扑谷自旋态

声子晶体的Dirac线性色散关系,使其具有奇特的声拓扑特性,在声波控制领域具有良好的应用前景.目前,声子晶体的拓扑边缘态主要基于Bragg散射所产生的能带结构,难以实现低频声波的受拓扑保护单向边缘传输.本文引入空间盘绕结构,设计了具有C_(3v)对称性的空间盘绕型声学超材料,并研究其布里渊区高对称点(K/K'点)的亚波长Dirac锥形线性色散.接着,通过旋转打破空间盘绕型声学超材料的镜像对称性,使其Dirac简并锥裂开而产生亚波长拓扑相变和亚波长拓扑谷自旋态.最后,采用拓扑相位互逆的声学超材料构造拓扑界面,实现声拓扑谷自旋传输.空间盘绕型声学超材料的亚波长Dirac线性色散与亚波长拓扑谷自旋态突破了声子拓扑绝缘体的几何尺寸限制,为声拓扑稳健传输在低频段的应用提供理论基础.     

Gapless interface states between topological insulators with opposite Dirac velocities

The Dirac cone on a surface of a topological insulator shows linear dispersion analogous to optics and its velocity depends on materials. We consider a junction of two topological insulators with different velocities, and calculate the reflectance and transmittance. We find that they reflect the backscattering-free nature of the helical surface states. When the two velocities have opposite signs, both transmission and reflection are prohibited for normal incidence, when a mirror symmetry normal to the junction is preserved. In this case we show that there necessarily exist gapless states at the interface between the two topological insulators. Their existence is protected by mirror symmetry, and they have characteristic dispersions depending on the symmetry of the system.     

类石墨烯复杂晶胞光子晶体中的确定性界面态

拓扑绝缘体是当前凝聚态物理领域研究的热点问题.利用石墨烯材料的特殊能带特性来实现拓扑输运特性在设计下一代电子和能谷电子器件方面具有较广泛的应用前景.基于光子与电子的类比,利用光子拓扑材料实现了确定性界面态;构建了具有C_(6v)。对称性的类似石墨烯结构的的光子晶体复杂晶格;通过多种方式降低晶格对称性来获得具有C_(3v),C_3,C_(2v)和C_2对称的晶体,从而打破能谷简并实现全光子带隙结构;将体拓扑性质不同的两种光子晶体摆放在一起,在此具有反转体能带性质的界面上,实现了具有单向传输特性的拓扑确定性界面态的传输.利用光子晶体结构的容易加工性,可以简便地调控拓扑界面态控制光的传播,可为未来光拓扑绝缘体的研究提供良好的平台.     

Electronic structures and topological properties of TeSe2 monolayers

The successfully experimental fabrication of two-dimensional Te monolayer films [Phys. Rev. Lett. 119 106101 (2017)] has promoted the researches on the group-VI monolayer materials. In this work, the electronic structures and topological properties of a group-VI binary compound of TeSe₂ monolayers are studied based on the density functional theory and Wannier function method. Three types of structures, namely, α-TeSe₂, β-TeSe₂, and γ-TeSe₂, are proposed for the TeSe₂ monolayer among which the α-TeSe₂ is found being the most stable. All the three structures are semiconductors with indirect band gaps. Very interestingly, the γ-TeSe₂ monolayer becomes a quantum spin Hall (QSH) insulator with a global nontrivial energy gap of 0.14 eV when a 3.5% compressive strain is applied. The opening of the global band gap is understood by the competition between the decrease of the local band dispersion and the weakening of the interactions between the Se p_x, p_y orbitals and Te p_x, p_y orbitals during the process. Our work realizes topological states in the group-VI monolayers and promotes the potential applications of the materials in spintronics and quantum computations.     

Alkali-metal-induced topological nodal line semimetalin layered XN2 (X= Cr,Mo, W)

Based on first principles calculations and the K·p effective model, we propose that alkali metal deposition on the surface of hexagonal XN₂ (X= Cr, Mo, W) nanosheets induces topologically nontrivial phases in these systems. When spin orbit coupling (SOC) is disregarded, the electron-like conduction band from N-p_z orbitals can be considered to cross the hole-like valence band from X-d²_z orbitals, thereby giving rise to a topological nodal line state in lithium-functionalized XN₂ sheets (Li₂MoN₂ and Li₂WN₂). Such band crossing is protected by the existence of mirror reflection and time reversal symmetry. More interestingly, the bands cross exactly at the Fermi level, and the linear dispersion regions of such band crossings extend to as high as 0.9 eV above the crossing. For Li₂CrN₂, the results reveal the emergence of a Dirac cone at the Fermi level. Our calculations show that lattice compression decreases the thickness of a Li₂CrN₂ nanosheet, leading to phase transition to a nodal line semimetal. The evolution of the band gap of Li₂XN₂ at the Γ point indicates that the nontrivial topological character of Li₂XN₂ nanolayers is stable over a large strain range. When SOC is included, the band crossing point is gapped out giving rise to quantum spin Hall states in Li₂CrN₂ nanosheets, while for Li₂MoN₂, the SOC-induced gap at the crossing points is negligible.     

声子晶体中的多重拓扑相

研究了圆环型波导依照蜂窝结构排列的声子晶体系统中的拓扑相变.利用晶格结构的点群对称性实现赝自旋,并在圆环中引入旋转气流来打破时间反演对称性.通过紧束缚近似模型计算的解析结果表明,没有引入气流时,调节几何参数,系统存在普通绝缘体和量子自旋霍尔效应绝缘体两个相;引入气流后,可以实现新的时间反演对称性破缺的量子自旋霍尔效应相,而增大气流强度,则可以实现量子反常霍尔效应相.这三个拓扑相可以通过自旋陈数来分类.通过有限元软件模拟了多个系统中边界态的传播,发现不同于量子自旋霍尔效应相,量子反常霍尔相系统的表面只支持一种自旋的边界态,并且它无需时间反演对称性保护.     

Unconventional pairing in three-dimensional topological insulators with a warped surface state

We study the effect of the Fermi surface anisotropy (hexagonal warping) on the superconducting pair potential, induced in a three-dimensional topological insulator (TI) by proximity with an s-wave superconductor (S) in presence of a magnetic moment of a nearby ferromagnetic insulator (FI). In the previous studies, similar problem was treated with a simplified Hamiltonian, describing an isotropic Dirac cone dispersion. This approximation is only valid near the Dirac point. However, in topological insulators, the chemical potential often lies well above this point, where the Dirac cone is strongly anisotropic and its constant energy contour has a snowflake shape. Taking into account this shape, we show that a very exotic pair potential is induced on the topological insulator surface. Based on the symmetry arguments we also discuss the possibility of a supercurrent flowing along the S/FI interface, when an S/FI hybrid structure is formed on the TI surface.     

Concentration of charge carriers and anomalous gap parameter in the normal state of high-Tc superconductors

Fermi–Dirac statistics has been utilized by introducing the average ionization energy (E_I) as an additional anomalous energy gap in order to derive the two-dimensional concentration of charge carriers and the phenomenological resistivity model for the superconducting polycrystalline materials. The best fitted values of E_I and the charge carriers' concentration ranges in the vicinity of 4 to 9 meV and 10¹⁶ m⁻², respectively, for the superconducting single crystal samples and polycrystalline compounds synthesized with various compositions via solid-state reactions. The phenomenological resistivity model is further redefined here based on the gapless nature of charge-carriers' dynamics within the Cu---O₂ planes that corresponds to anomalous Fermi liquid behavior, which is in accordance with the nested Fermi liquid theory.     

Single Dirac cone topological surface state and unusual thermoelectric property of compounds from a new topological insulator family

Angle resolved photoemission spectroscopy study on TlBiTe2 and TlBiSe2 from a thallium-based ternary chalcogenides family revealed a single surface Dirac cone at the center of the Brillouin zone for both compounds. For TlBiSe2, the large bulk gap (～200 meV) makes it a topological insulator with better mechanical properties than the previous binary 3D topological insualtor family. For TlBiTe2, the observed negative bulk gap indicates it as a semimetal, instead of a narrow-gap semiconductor as conventionally believed; this semimetality naturally explains its mysteriously small thermoelectric figure of merit comparing to other compounds in the family. Finally, the unique band structures of TlBiTe2 also suggest it as a candidate for topological superconductors.     

拓扑绝缘体(Bi0.5Sb0.5)2Te3薄膜中的线性磁阻

本文报道了拓扑绝缘体(Bi_0.5Sb_0.5)₂Te₃薄膜中线性磁阻问题的系统性研究工作. 此体系中, 线性磁阻在很宽的温度和磁场范围内出现: 磁场高达18 T时磁阻仍没有饱和趋势, 并且当温度不高于50 K时, 线性磁阻的大小对温度的变化不敏感. 栅压调控化学势可明显改变线性磁阻的大小. 当化学势接近狄拉克点时, 线性磁阻最为显著. 这些结果说明电荷分布的不均匀性是引起该材料线性磁阻的根源.     

O KVV Auger emission versus resonant photoemission at the O K edge of high-Tc superconductors

Photoelectron spectroscopy results on single crystals of the superconductors Bi₂Sr₂CaCu₂O₈,Bi₂Sr₂CuO₆, Ba_0.6K_0.4BiO₃ and the semiconductor Ba_0.9K_0.1BiO₃ are reported for the photon energy region around the O K absorption threshold. The development of the O-KVV Auger structure has been carefully monitored as a function of photon energy. A non-monotonic behavior displaying a feature at a constant binding energy of about 14 eV was found for Bi₂Sr₂CaCu₂O₈ and Bi₂Sr₂CuO₆ in a narrow photon energy region of 1 eV at the main edge of the O K absorption spectrum around 530 eV. The corresponding enhancement, connected with the autoionization of O 2p states, is absent in Ba_1−xK_xBiO ₃ in contrast to Bi₂Sr₂CaCu₂O₈ and Bi₂Sr₂CuO₆. The resonant enhancement is more pronounced for Bi₂Sr₂CuO₆ as compared to Bi₂Sr₂CaCu₂O₈, which can be explained by a lower charge carrier concentration in the former case, leading to a more localized nature of intermediate O 2p states. The model parameters Cu d–d and O p–p Coulomb interactions and the charge transfer energy Δ are estimated from the experiments.     

Topological Dirac surface states in ternary compounds GeBi2Te4, SnBi2Te4 and Sn0.571Bi2.286Se4

Using high-resolution angle-resolved and time-resolved photoemission spectroscopy, we have studied the low-energy band structures in occupied and unoccupied states of three ternary compounds GeBi₂Te₄, SnBi₂Te₄ and Sn_0.571Bi_2.286Se₄ near the Fermi level. In previously confirmed topological insulator GeBi₂Te₄ compounds, we confirmed the existence of the Dirac surface state and found that the bulk energy gap is much larger than that in the first-principles calculations. In SnBi₂Te₄ compounds, the Dirac surface state was observed, consistent with the first-principles calculations, indicating that it is a topological insulator. The experimental detected bulk gap is a little bit larger than that in calculations. In Sn_0.571Bi_2.286Se₄ compounds, our measurements suggest that this nonstoichiometric compound is a topological insulator although the stoichiometric SnBi₂Se₄ compound was proposed to be topological trivial.     

Tunneling studies on NdBa2Cu3O7−y

Tunneling measurements were performed at 4.2 K on well-characterized NdBa₂Cu₃O_7−y samples using a sandwich configuration with an artificially grown barrier layer (sputtered indium oxide) and Pb_0.5In_0.5 counter electrode. The conductance spectra exhibited well-defined structures characteristic of gap opening. Fitting the data to a life-time broadened BCS density of states function yielded the following values: 20 meV for the energy gap Δ, 1.5 meV for the line width Γ and 5.3 for 2Δ/k_BT_c.     

Strain engineering of topological properties in lead‐salt semiconductors

Rock‐salt chalcogenide SnTe represents the simplest realization of a topological insulator where a crystal symmetry allows for the appearance of surface metallic states. Here, we theoretically predict that strain, as realized in thin films grown on (001) substrates, may induce a transition to a topological crystalline insulating phase in related lead‐salt chalcogenides. Furthermore, relevant topological properties of the surface states, such as the location of the Dirac cones on the surface Brillouin zone or the decay length of edge states, appear to be tunable with strain, with potential implications for technological devices benefiting from those additional degrees of freedom. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Robust surface state of intrinsic topological insulator Bi2Te2Se thin films: a first-principles study

Bi(2)Te(2)Se, a ternary tetradymite compound, has recently been identified to be a three-dimensional topological insulator. In this paper, we theoretically study the electronic structures of bulk and thin films of Bi(2)Te(2)Se employing spin-orbit coupling (SOC) self-consistently with density-functional theory. It is found that SOC plays an important role in determining the electronic properties of Bi(2)Te(2)Se. A finite bandgap opens up in the surface states of Bi(2)Te(2)Se thin films due to the hybridization of the top and bottom surface states of films. The intrinsic Bi(2)Te(2)Se thin films of three or more quintuple layers exhibit a robust topological nature of electronic structure with the Fermi energy intersecting the Dirac cone of the surface states only once between time-reversal-invariant momenta. These characteristics of Bi(2)Te(2)Se are similar to the topological behavior of Bi(2)Te(3), promising a variety of potential applications in nanoelectronics and spintronics.     

Phonon-induced backscattering in helical edge states

A single pair of helical edge states as realized at the boundary of a quantum spin Hall insulator is known to be robust against elastic single particle backscattering as long as time reversal symmetry is preserved. However, there is no symmetry preventing inelastic backscattering as brought about by phonons in the presence of Rashba spin orbit coupling. In this Letter, we show that the quantized conductivity of a single channel of helical Dirac electrons is protected even against this inelastic mechanism to leading order. We further demonstrate that this result remains valid when Coulomb interaction is included in the framework of a helical Tomonaga Luttinger liquid.     

Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3

We report the experimental observation of Landau quantization of molecular beam epitaxy grown Sb{2}Te{3} thin films by a low-temperature scanning tunneling microscope. Different from all the reported systems, the Landau quantization in a Sb{2}Te{3} topological insulator is not sensitive to the intrinsic substitutional defects in the films. As a result, a nearly perfect linear energy dispersion of surface states as a 2D massless Dirac fermion system is achieved. We demonstrate that four quintuple layers are the thickness limit for a Sb{2}Te{3} thin film being a 3D topological insulator. The mechanism of the Landau-level broadening is discussed in terms of enhanced quasiparticle lifetime.     

Giant pressure effect in oxygen deficient YBa2Cu3Ox

The pressure effect on T_c of polycrystalline and single crystalline YBa₂Cu₃O_x investigated as a function of oxygen content x by ac-susceptibility measurements under helium pressure. In the overdoped region x> 6.93 the single crystals show a negative dT_c/d p, as expected from the charge transfer model. For optimally doped samples with x = 6.93 we find dT_c/d P = 0.4 K/GPa which points to pressure effects on T_c aside from charge transfer. In the underdoped region x < 6.93 the dT_c/d p values obtained from the experiment depend strongly on the storage temperature of the sample during the experiment. When the samples are stored at temperatures well below 240 K throughout the entire experiment including pressure application and pressure release, dT_c/d p increases to approx. 7 K/GPa at x = 6.7 but with a further decrease of the oxygen content the dT_c/d p drops to approx. 2 K/GPa at x = 6.4. These effects are intrinsic to the YBa₂Cu₃O_x structure and can be explained by considering the anisotropic structure of YBa₂Cu₃O_x. The decrease of the c-axis lattice parameter results in a charge transfer to the CuO₂-planes mainly [1], whereas the compression of the a- and b-axis lattice parameter is known to produce different pressure effects which are responsible for the peak in dT_c/d p at x = 6.7 [2]. When pressure is changed at room temperature oxygen ordering effects occur which cause a relaxation of T_c to the equilibrium value T_c(p) at this pressure with a time constant depending on the oxygen content x. A decrease x results in a peak effect in dT_c/d p at x = 6.7 again, which is enhanced to approx. 12 K/GPa. If the oxygen content is decreased further, dT_c/d p first drops to 5 K/GPa at x = 6.6, but the increases to values of more than 20 K/GPa for x < 6.42. These giant pressure effects at low oxygen contents are mainly caused by a reversible T_c increase (dT_c/d p)_O due to pressure induced oxygen ordering via oxygen motion between unit cells.     

Quantum group invariant fermionic gases: GLp,q(2) and SUp/q(2) invariances

We first investigate the high-temperature behavior of a two-parameter deformed quantum group fermionic gas with GL_p,q(2) symmetry, where (p,q)C×C. We then discuss both the structural and thermodynamical differences between GL_p,q(2)- and SU_r(2)-fermions with r=p/q where (p,q)R×R.