Effect of high doses of N<Superscript>+</Superscript>, N<Superscript>+</Superscript> + Ni<Superscript>+</Superscript>, and Mo<Superscript>+</Superscript> + W<Superscript>+</Superscript> ions on the physicomechanical properties of TiNi

The surface layer of an equiatomic TiNi alloy, which exhibits the shape memory effect in the martensitic state, is modified with high-dose implantation of 65-keV N⁺ ions (the implantation dose is varied from 10¹⁷ to 10¹⁸ ions/cm²). TiNi samples are implanted by N⁺, Ni⁺-N⁺, and Mo⁺-W⁺ ions at a dose of 10¹⁷–10¹⁸ cm⁻² and studied by Rutherford backscattering, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction (glancing geometry), and by measuring the nanohardness and the elastic modulus. A Ni⁺ concentration peak is detected between two maxima in the depth profile of the N⁺ ion concentration. X-ray diffraction (glancing geometry) of TiNi samples implanted by Ni⁺ and N⁺ ions shows the formation of the TiNi (B2), TiN, and Ni₃N phases. In the initial state, the elastic modulus of the samples is E = 56 GPa at a hardness of H = 2.13 ± 0.30 GPa (at a depth of 150 nm). After double implantation by Ni⁺-N⁺ and W⁺-Mo⁺ ions, the hardness of the TiNi samples is ∼2.78 ± 0.95 GPa at a depth of 150 nm and 4.95 ± 2.25 GPa at a depth of 50 nm; the elastic modulus is 59 GPa. Annealing of the samples at 550°C leads to an increase in the hardness to 4.44 ± 1.45 GPa and a sharp increase in the elastic modulus to 236 ± 39 GPa. A correlation between the elemental composition, microstructure, shape memory effect, and mechanical properties of the near-surface layer in TiNi is found.     

Electron impact dissociation of ND<Superscript>+</Superscript>: formation of D<Superscript>+</Superscript>

Absolute cross sections for electron impact dissociation of ND⁺ leading to the formation of D⁺ have been measured by applying the animated electron-ion beam method in the energy range from the reaction threshold up to 2.5 keV. The maximum inclusive cross section is observed to be (16.8 ± 0.8) × 10⁻¹⁷ cm² at the electron energy of 65.1 eV. The appearance energy for the D⁺ production is measured to be (4.0 ± 0.5) eV. Collected data are analyzed in details by means of an original procedure in order to determine separately the contributions of dissociative channels. A specific Monte Carlo modeling has been developed, which is proven to reconstruct adequately the dissociative ionization cross section. The present energy thresholds provide information about the ground and excited states of the molecular ion, as well as about the possible population of the vibrational levels. The reaction D₂(v) + N⁺ (or H₂(v) + N⁺) is a probable source for that population and it constitutes the first step of the molecular activated processes, so the corresponding chain of reactions has to be considered to study the chemistry of plasma sources.     

Kinetics of Rb<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack> and Rb<Superscript>+</Superscript> formation in laser-excited rubidium vapor

We have studied the formation of the molecular ion Rb₂⁺ and the atomic ion Rb⁺. These are created in laser excited rubidium vapor at the first resonance, 5s–5p and 5p-nl transitions. A theoretical model is applied to this interaction to explain the time evolution and the laser-power dependence of the population density of Rb⁺ and Rb₂⁺. A set of rate equations which describe: the temporal variation of the population density of the excited states; the atomic ion density; and the electron density, were solved numerically under the experimental conditions of Barbier and Cheret. In their experiment the Rb concentration was 1×10¹³cm⁻³ and the laser power was taken to be 50–500 mW at vapor temperature = 450 K. The results showed that the main processes for producing Rb₂⁺ are associative ionization and Hornbeck-Molnar ionization. The calculations have also showed that, the atomic ions Rb⁺ are formed through the Penning Ionization (PI) and photoionization processes. Moreover, a reasonable agreement between the experimental results and our calculations for the ion currents of the Rb⁺ and Rb₂⁺ is obtained.      

H<Superscript>+</Superscript> and He<Superscript>2+</Superscript> impact charge transfer cross sections of magnesium

H⁺ impact single and He²⁺ impact single and double electron capture cross sections of magnesium atoms have been calculated in the modified binary encounter approximation (BEA). The accurate expressions of ion impact s_DE\sigma _{\Delta {E}} (cross section for energy transfer DE\Delta E) and Hartree-Fock momentum distributions of the target electrons have been used throughout the calculations. On the basis of the present work it is concluded that inner shell captures by H⁺ and He²⁺ ions incident on magnesium atoms contribute partly to single electron capture and partly to transfer ionization cross sections. The calculated He²⁺ impact double electron capture cross sections of magnesium are in reasonably good agreement with the experimental observations. This indicates the success of the present theoretical approach in study of charge transfer cross sections of atoms as indirect mechanisms do not interfere with double electron capture processes in this case.     

Modification of GaAs by medium-energy N<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack> ions

The modification of GaAs with a 2500-eV beam containing N ₂ ⁺ and Ar⁺ ions is examined with Auger electron spectroscopy. Most implanted nitrogen atoms are found to react with the matrix, substituting arsenic atoms to produce a several-nanometer-thick layer of the single-phase GaAs_1−x N_x (x=6%) solid solution. The GaN phase is absent. Displaced arsenic atoms and nitrogen atoms unreacted with the matrix are present in the layer and on its surface. The former segregate, whereas the latter form molecules.     

Surface composition modification of tungsten higher oxide under He<Superscript>+</Superscript> ion bombardment

The surface reduction of higher oxide WO₃ under irradiation by He⁺ ions with the energies 1 and 3 keV in a high vacuum is investigated by X-ray photoelectron spectroscopy. It is found that lower WO₂ and intermediate WO _x (2 < x < 3) oxides form first in WO₃ surface layers under He⁺ ion bombardment, and with an increase in the irradiation dose metallic tungsten forms. It is shown that the degree of irradiated oxide surface metallization increases with an increase in the energy of the bombarding He⁺ ions. A comparison of WO₃ oxide surface composition modification under He⁺ and Ar⁺ ion irradiation is presented.     

Investigating <Superscript>64</Superscript>Zn<Superscript>+</Superscript> ion-doped silicon under conditions of hot implantation

The results from visualizing the structure and identifying the composition of surface and the nearsurface layers of CZ n-Si (100) implanted by ⁶⁴Zn⁺ ions with dose of 5 × 10¹⁶ cm^–2 and energy of 50 keV under conditions of a substrate heated to 350°C are presented. It is found that there is no Si amorphization after Zn implantation, and only one layer 200 nm thick forms and is damaged because of radiation-induced defects. Zn nanoparticles 10–100 nm in size are found on a sample’s surface and in its near-surface layer. Computer analysis and mapping of the elemental and phase composition of FIB crater walls and the surface show that the main elements (54%) in the sample near-surface layer are Si, O, and Zn. The presence of ZnO phase is recorded to a depth of 20 nm in the sample.     

Thermally stimulated desorption of Na<Superscript>+</Superscript> and Cs<Superscript>+</Superscript> ions from a NaAu alloy film grown on Au

The formation of Na⁺ and Cs⁺ ions on and their thermal desorption from the surface of a NaAu alloy film grown on metallic gold are studied. It is shown that thermionic emission from insulator-coated metallic substrates is governed by a sequence of processes, such as diffusion of Na and Cs adatoms into the film, ionization of these atoms at the insulator-metal interface, diffusion of the resulting ions toward the surface, and desorption of the ions. The effect of weak electric fields on ion diffusion and desorption is investigated.     

<Superscript>10</Superscript>B<Superscript>+</Superscript>-ion implantation into photoresist

100-keV ¹⁰B⁺ ions were implanted into photoresist in different directions at a fluence of 1×10¹⁴ cm^-2, and their depth distribution was determined by means of the neutron depth profiling technique. In no case were the projectile ions found to come to rest according to their predicted implantation profiles. Instead, they are always found to undergo considerable long-range migration. During the irradiation process this motion appears to be enhanced by the radiation damage, and during the subsequent annealing steps one deals with thermal diffusion. The implant redistribution is always found to be governed strongly by the self-created damage, insofar as both electronic and nuclear defects in the polymer act as trapping centers. The implant redistribution shows a pronounced directional dependence, essentially as a consequence of the spatial distribution of the electronic energy loss. The changes of the nuclear defect distribution during thermal annealing are studied by a specially developed tomographic method in three dimensions. PACS 61.72.Ww; 61.80.Jh; 61.41.+e; 66.30.-h; 66.30.Jt     

Charge exchange collisions of H<Superscript>+</Superscript>/D<Superscript>+</Superscript> ions with alkaline Earth atoms (Ca,Mg)

The Classical Trajectory Monte Carlo (CTMC) Method has been used to calculate the differential, partial and total single electron capture cross sections for the collision of H⁺/D⁺ with Ca and Mg atoms in the energy range of 1–100 keV. The differential cross sections at angles near the diffraction limit (<0.1^○) in both systems show a forward peak followed by an asymptotic fall at higher angles. Total and partial capture cross sections are found to be in good agreement with the experimental observations. Oscillations in the partial capture cross sections have been explained due to the swapping of the field electron. Isotope effect in the electron transfer is reported to be negligible.     

Evolution of Phase Composition and Structure in Sapphire Implanted with <Superscript>64</Superscript>Zn<Superscript>+</Superscript> Ions and Heat-Treated in Oxygen

Single-crystal Al₂O₃ substrates are implanted with ⁶⁴Zn⁺ ions using doses of 5 × 10¹⁶ cm^–2 and an energy of 100 keV. The samples are annealed in oxygen with a stepwise increase in temperature from 400 to 1000°C. The changes on the surface and in the bulk of the sample are analyzed via scanning electron microscopy, energy-dispersive analysis, transmission electron microscopy, and Auger electron spectroscopy.     

Electron-impact ionization and dissociation of C<Subscript>2</Subscript>D<Superscript>+</Superscript>

Absolute cross sections for electron-impact single ionization, dissociative excitation and dissociative ionization of the ethynyl radical ion (C₂D⁺)^+) have been measured for electron energies ranging from the corresponding reaction thresholds to 2.5 keV. The animated crossed electron-ion beam experiment is used and results have been obtained for the production of C₂D²⁺, C²⁺, C₂⁺_2^+ , CD⁺, C⁺ and D⁺. The maximum of the cross section for single ionization is found to be (2.01 ± 0.02) × 10^-17 cm², at the incident electron energy of 105 eV. Absolute total cross sections for the various singly charged fragments production are observed to decrease by a factor of almost three, from the largest cross-section measured for C⁺, over C₂⁺_2^+ and CD⁺ down to that of D⁺. The maxima of the cross sections are obtained to be (14.5 ± 0.5) × 10^-17 cm² for C₂⁺_2^+, (12.1 ± 0.1) × 10^-17 cm² for CD⁺, (27.7 ± 0.2) × 10^-17 cm² for C⁺ and (11.1 ± 0.8) × 10^-17 cm² for D⁺. The smallest cross section is measured to be (1.50 ± 0.04) × 10^-18 cm² for the production of the doubly charged ion C²⁺. Individual contributions for dissociative excitation and dissociative ionization are determined for each singly-charged product. The cross sections are presented in closed analytic forms convenient for implementation in plasma simulation codes. Kinetic energy release distributions of dissociation fragments are seen to extend from 0 to 6 eV for the heaviest fragment C₂⁺_2^+, up to 11.0 eV for CD⁺, 14.2 eV for C⁺ and 11.2 eV for D⁺ products.     

Photoionisation loading of large Sr<Superscript>+</Superscript> ion clouds with ultrafast pulses

This paper reports on the use of ultrafast pulses for photoionisation loading of singly-ionised strontium ions in a linear Paul trap. We take advantage of an autoionising resonance of Sr neutral atoms to form Sr⁺ by two-photon absorption of femtosecond pulses at a wavelength of 431 nm. We compare this technique to electron-bombardment ionisation and observe several advantages of photoionisation. It actually allows for the loading of a pure Sr⁺ ion cloud in a low radio-frequency voltage amplitude regime. In these conditions, up to 4×10⁴ laser-cooled Sr⁺ ions were trapped.     

Effects of Li<Superscript>+</Superscript> co-doping on the concentration quenching threshold and luminescence of GdVO<Subscript>4</Subscript>:Eu<Superscript>3+</Superscript> nanophosphors

Europium ions (Eu³⁺) and Lithium ions (Li⁺) codoped gadolinium orthovanadate with a tetragonal phase had been successfully synthesized by an efficient hydrothermal method. X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) were utilized to characterize the microstructure, morphology, and luminescent properties of as-prepared samples. The various concentrations (0～14 at.%) of Li ions were applied to investigate the effect of Li⁺ co-doping concentration on the crystalline structure, microstructure, and emission intensity of GdVO₄:Eu³⁺, Li⁺ nanophosphors. The results demonstrated that Li⁺ ion co-doping changes the lattice parameters in two different ways. Moreover, the optical photoluminescent property was obtained when the Li⁺ co-doping concentration is 10 at.%. The influence of Li⁺ co-doping on the concentration quenching effect of Eu³⁺ was discussed as well. The concentration quenching threshold of Eu³⁺ was increased distinguishably. The potential mechanism was proposed in this paper.     

Frequency measurements in the b <Superscript>3</Superscript>Π(0<Subscript>u</Subscript><Superscript>+</Superscript>) - X <Superscript>1</Superscript>Σ<Subscript>g</Subscript><Superscript>+</Superscript> system of K<Subscript>2</Subscript>

Absolute transition frequencies of the b ³Π(0_u ⁺) - X ¹Σ_g ⁺ system of K₂ were measured in a molecular beam with Lamb dip absorption spectroscopy applying a frequency comb from a femtosecond pulsed laser. Both, K atoms and K₂ molecules are present in the beam and are expected to interact by collisions. The atoms can be deflected optically out of the beam, and thus the collision rate between K atoms and K₂ molecules is changed by about an order of magnitude. The molecular transition frequencies for low collisional rate are compared with those for high one. Limits for the collisional frequency shift within the beam are determined.     

Surface characteristics of V-Ga alloys after irradiation by Ar<Superscript>+</Superscript> and N<Superscript>+</Superscript> ions

V-5Ga-6Cr and V-5Ga-0.05Ce vanadium alloys irradiated by Ar⁺ and N⁺ ions with energies of 20 keV have been investigated. Irradiation by Ar⁺ and N⁺ ions leads to strengthening of the surface layers of samples. Their thicknesses exceed the projectile ranges of these ions (16.4 and 32.8 nm, respectively) in vanadium by more than two orders of magnitude. The experimentally determined penetration depth of argon ions is less that 70 nm. The sample side irradiated by Ar⁺ ions has a predominant orientation of crystallites in the (100) and (211) planes, while the unirradiated sample has a (110) surface. The lattice parameter of the irradiated sample does not differ from that of the initial sample. Possible mechanisms by which modified deep layers are formed during ion bombardment are discussed.     

Photoluminescence and EPR of porous silicon formed on <Emphasis Type="Italic">n</Emphasis><Superscript>+</Superscript> and <Emphasis Type="Italic">p</Emphasis><Superscript>+</Superscript> single crystals implanted with boron and phosphorus ions

The effect of combined doping by shallow donor and acceptor impurities on boosting the quantum yield of porous-silicon photoluminescence (PL) in the visible and near IR range was studied using phosphorus and boron ion implantation. Nonuniform doping of samples and subsequent oxidizing annealing were performed before and after porous silicon was formed on silicon single crystals strongly doped by arsenic or boron up to ≈10¹⁹ cm^?3. The concentration of known P_b centers of nonradiative recombination was controlled by electron paramagnetic resonance. It is shown that there is an optimal joined content of shallow donors and acceptors that provides a maximum PL intensity in the vicinity of the red part of the visible spectrum. According to estimates, the PL quantum yield in the transitional n ⁺⁺-p ⁺ or p ⁺⁺-n ⁺ layer of porous silicon increases by two orders of magnitude as compared to that in porous silicon formed on silicon not subjected to ion irradiation.     

Graviton resonances in e<Superscript>+</Superscript>e<Superscript>-</Superscript>→μ<Superscript>+</Superscript>μ<Superscript>-</Superscript> at linear colliders with beamstrahlung and ISR effects

The electromagnetic radiation emitted by colliding beams is expected to play an important role at the next generation of high energy e⁺e^- linear colliders. Focussing on the simplest process, e⁺e^-→μ⁺μ^-, we show that, for suitable machine parameters and luminosity, radiative effects like initial state radiation (ISR) and beamstrahlung can be used to search for resonant graviton modes of the Randall–Sundrum model in an efficient manner.     

Calculation of adiabatic potentials of Li<Subscript>2</Subscript><Superscript>+</Superscript>

We report adiabatic potential energy curves of the Li₂ ⁺ molecule. Our curves are tabulated according to internuclear distance from 2 a₀ to 100 a₀. We compare our theoretical results with the ones calculated by other authors and potential energy curves derived from experiments. For the ground state and 17 excited states we calculate spectroscopic parameters and compare them with parameters obtained by other authors. For the first time we present three new minima for 3²Σ_u ⁺, 4²Σ_u ⁺ and 2²Π_g excited states. In our approach we use the configuration interaction method where only the valence electrons of Li atoms are treated explicitly. The core electrons are represented by pseudopotential. All calculations are performed by means of MOLPRO program package.