Solvent dependent characteristics of XeCl pumped UV dye lasers

The characteristics of near uv dye lasers pumped with short duration, 308 nm pulses from a XeCl laser are described with particular emphasis on the parameters influencing high average power operation. The solvent is shown to effect the operation of all dye lasers studied, particularly the photochemical stability. Measurements of the efficiency, as a function of the integrated pump energy have been made for a series of dye-solvent combinations. With the best combinations, average output powers in excess of 1W and conversion efficiencies greater than 25% were obtained at a repetition rate of ∼100 Hz.     

Linear and cross-linked polymeric solid-state dye lasers based on 8-substituted alkyl analogues of pyrromethene 567

The lasing properties of analogues of the commercial laser dye pyrromethene 567 (PM567) incorporated (dissolved or copolymerized) into polymeric matrices have been studied using both linear and cross-linked methyl methacrylate-based copolymers with different degrees of functionalization. All synthesized dyes have the chromophore core of PM567 but with an ω-acyloxypolymethylene chain at position 8. In general, the new materials exhibited laser emission with higher efficiencies and much higher photostabilities than those containing the commercial dye PM567 under the same experimental conditions. Lasing efficiencies of up to 40% were obtained under transversal pumping at 534 nm. The highest photostabilities, with the laser output remaining stable or dropping by less than 15% after 100 000 pump pulses at the same position of the sample, were reached in cross-linked materials with dyes covalently linked to the polymeric chains. When the polymeric samples were incorporated into a grazing-incidence grating oscillator, narrow-line-width operation with tuning ranges of up to 40 nm was obtained. These results show that efficient and photostable solid-state dye lasers competitive with their liquid counterparts can be developed by adequate chemical modifications in the dye molecules, as well as by the selection of appropriate polymeric formulations.     

Efficient cw sodium dimer Raman laser operation in a high-temperature sapphire cell

cw Raman lasing of Na₂ molecules generated in a heated, sealed-off, all-sapphire cell is demonstrated. Being not damaged by highly corrosive alkaline vapours, this type of cell enables operation without buffer gas in contrast to the normal heatpipe operation of these lasers. This allows us to study Raman lasers in alkaline vapours in new regimes and under ideal conditions. With an argon ion pump laser at 488 nm, Raman laser operation at 525 nm with more than 10% efficiency and thresholds below 0.2 mW for a cell without buffer gas (length 9 cm) have been obtained so far. The low thresholds, being a factor of 10 less than for comparable heatpipe operation, gives us the chance to use low-power diode lasers as pump sources and to realize compact reliable Raman laser systems. Received: 17 May 1999 / Published online: 25 August 1999     

Passively modelocked surface-emitting semiconductor lasers

This paper will review and discuss pico- and femtosecond pulse generation from passively modelocked vertical–external-cavity surface-emitting semiconductor lasers (VECSELs). We shall discuss the physical principles of ultrashort pulse generation in these lasers, considering in turn the role played by the semiconductor quantum well gain structure, and the saturable absorber. The paper will analyze the fundamental performance limits of these devices, and review the results that have been demonstrated to date. Different types of semiconductor saturable absorber mirror (SESAM) design, and their characteristic dynamics, are described in detail; exploring the ultimate goal of moving to a wafer integration approach, in which the SESAM is integrated into the VECSEL structure with tremendous gain in capability. In particular, the contrast between VECSELs and diode-pumped solid-state lasers and edge-emitting diode lasers will be discussed. Optically pumped VECSELs have led to an improvement by more than two orders of magnitude to date in the average output power achievable from a passively modelocked ultrafast semiconductor laser.     

Investigations on laser plasma soft X-ray sources generated with low energy laser systems

Spectra of laser-induced plasmas at low laser energies and intensities (around 100 mJ and 10¹⁰ W cm^–2 respectively) have been recorded in the spectral range of 20 to 100 nm for different target materials, laser intensities at the target and laser wavelengths. For heavy target materials, a broadband spectrum with a spectral maximum typically around 30 nm is obtained. This broadband radiation source is well suited for photoionization processes and the generation of short wavelength inner-shell photoionization lasers. For the cadmium-photoionization laser, the influence of different soft X-ray spectra on the laser energy has been investigated. The potential of laser plasma soft X-ray sources for scientific and technical applications is briefly reviewed.Dedicated to Prof. Dr. Herbert Welling on the occasion of his 60th birthday     

Efficiency of diode-pumped 1.35µm laser from Nd:KGW

A set of quasi-Continuous-Wave (CW) diode lasers has been used to pump Nd:KGW and to generate 1.35µm laser radiation at room temperature. The optical-to-optical and slope efficiencies have been measured and compared with those of Nd:YAG at identical experimental conditions.     

Theoretical investigation of chirped mirrors in semiconductor lasers

This paper reports a theoretical design of chirped mirrors in 1.3-μm double-section semiconductor lasers to achieve high reflectivity and dispersion compensation over a broad bandwidth. Analytic expressions for reflectivity, group delay and group delay dispersion are derived. We use for the first time chirped air/semiconductor layer pairs as mirrors for higher-order dispersion compensation in semiconductor lasers. Our optimised calculations demonstrate that the broad-band mirrors designed consist of a total of only 12 air/semiconductor layers and achieve a reflectivity higher than 99.8%, a smooth group delay and almost stable dispersion in the laser cavity over a 100-nm bandwidth. Due to a high index contrast of both types of the layers, n _l = 1, n _h~ 3.5, a high-reflectivity bandwidth of > 700 nm is obtained in 1.3-μm semiconductor lasers. We also compare our results with that of a commercial simulation program and show a good agreement between them. As a conclusion, we assume from the theoretical results that air/semiconductor layer pairs with varying thicknesses used at one end of double-section semiconductor lasers can lead to femtosecond optical pulse generation using mode-locking techniques. An erratum to this article can be found at .     

Scalable concept for diode-pumped high-power solid-state lasers

A new, scalable concept for diode-pumped high-power solid-state lasers is presented. The basic idea of our approach is a very thin laser crystal disc with one face mounted on a heat sink. This allows very high pump power densities without high temperature rises within the crystal. Together with a flat-top pump-beam profile this geometry leads to an almost homogeneous and one-dimensional heat flux perpendicular to the surface. This design dramatically reduces thermal distortions compared to conventional cooling schemes and is particularly suited for quasi-three-level systems which need high pump power densities. Starting from the results obtained with a Ti:Sapphire-pumped Yb:YAG laser at various temperatures, the design was proved by operating a diode-pumped Yb:YAG laser with an output power of 4.4 W and a maximum slope efficiency of 68%. From these first results we predict an exctracted cw power of 100 W at 300 K (140 W at 200 K) with high beam quality from a single longitudinally pumped Yb: YAG crystal with an active volume of 2 mm³. Compact diode-pumped solid-state lasers in the kilowatt range seem to be possible by increasing the pump-beam diameter and/or by using several crystal discs.     

Sub-nanosecond microchip laser with intracavity Raman conversion

Efficient sub-nanosecond pulse operation of microchip lasers with intracavity Raman conversion and pulse compression is presented for the first time. The microchip lasers were composed of Nd:LSB or Nd:YAG laser crystals, Cr⁴⁺:YAG saturable absorber, and Ba(NO₃)₂ Raman medium. The pulse duration obtained at the Stokes wavelength (1196 nm) was as short as 118 ps. Optical conversion efficiency of laser-diode pump power to the Stokes power of 8% was reached. Pulse energy and peak power of Stokes emission were 1.2 μJ and 5.4 kW, correspondingly. Numerical calculations are in good agreement with obtained experimental results. Received: 20 December 2002 / Revised version: 6 March 2003 / Published online: 5 May 2003 RID="*" ID="*"Corresponding author. Fax: +1-716/645-6945, E-mail: ankuzmin@acsu.buffalo.edu RID="**" ID="**"Present address: University at Buffalo, SUNY, The Institute for Lasers, Photonics, and Biophotonics, 458 NSC, Buffalo, NY 14 260-3000, USA     

Theoretical investigation on temporal properties of random lasers pumped by femtosecond-lasing pulses

Pulsing random lasing property has been investigated in both one- and two-dimensional random medium by numerically solving Maxwell’s equations and rate equations in which the pumping rate is described by a time function with duration of 10s or 100s of femtoseconds. The peak intensity, width and delay time of a random lasing pulse are traced with the variation of the peak intensity, duration, shape and numbers of a pumping pulse. Results show that the behavior of random lasing depends strongly on the pumping process, some of which are in agreement with previously reported experiments pumped by femtosecond-lasing pulses. The present work enriches the knowledge about random lasers, especially in temporal regime, and could offer more guidance for relevant experiments.     

Passively Q-switched Nd:YAG pumped UV lasers at 280 and 374 nm

Pulsed UV lasers at the wavelengths of 374 and 280 nm are realized by cascaded second harmonic generation (SHG) and sum frequency generation (SFG) processes using a Nd:YAG laser at 1123 nm. The Nd:YAG laser is longitudinally pumped and passively Q-switched, and it has a high peak power of 3.2 kW. The UV peak powers at 280 and 374 nm are 100 and 310 W, with pulse lengths of 6 and 8 ns, respectively. Spectral broadening of 374 nm laser by stimulated Raman scattering is studied in single mode pure silica core UV fiber. Realizations of UV lasers enabling compact design at 280 and 374 nm wavelengths are demonstrated.     

Pulsed waveguide CO laser operating at room temperature

A pulsed waveguide CO laser operating at room temperature is described. Experimental results of the laser output power variation with discharge parameters and its spectral distribution are given and discussed. In contrast to other CO lasers the best performance has been obtained without diluent gases. A small amount of oxygen added to the CO laser gas enhances the output energy and prevents carbon deposition at the walls of the waveguide channel. So far a laser pulse energy of 40 J has been obtained at an efficiency of 0.4%. Possible ways to increase the laser output energy are discussed.     

Comparison of Nd:YAG Ceramic Laser Pumped at 885nm and 808nm

Laser performance of 1064 nm domestic Nd：YAG ceramic lasers for 885 nm direct pumping and 808 nm traditional pumping are compared. Higher slope efficiency of 34% and maximum output power of 16.5 W are obtained for the 885nm pump with a 6ram length 1 at.% Nd：YAG ceramic. The advantages for 885nm direct pumping are discussed in detail. This pumping scheme for highly doping a Nd：YAG ceramic laser is considered as an available way to generate high power and good beam quality simultaneously.     

Magnetic-spiker excitation of gas-discharge lasers

A review is presented on the use of magnetic-spiker circuits to electrically excite rare-gas-halide and CO₂ gas-discharge lasers. The design and operation of the diode, switch, overshoot, and charge modes of magnetic-spiker excitation will be described. Special emphasis has been placed upon understanding the dynamical behaviour and saturation properties of the magnetic core material at high frequencies. The effect of voltage risetime, preionization, pulse-forming network design, and prefire on laser performance is also described. Experimental data are presented on a new and very simple magnetic-spiker circuit called the modified overshoot mode. A relatively long optical pulse magnetic-spiker KrF laser is also desribed which uses self-timed corona preionization initiated by the spiker circuit. The use of magnetic-spiker excitation to produce high output laser energies, high repetition rates, and long optical pulses is discussed. Applications of magnetic-spiker lasers in the field of medicine, microelectronics and materials processing will be reviewed.     

Far-Field Distributions of Double-Heterostructure Diode Lasers： an Improved Non-Equiphase Model

A non-equiphase Gaussian model is proposed to simulate the far-field distributions ofdouble-heterostructure diode lasers, which is physically reasonable because the phase along the junction of diode lasers could not be equal, A comparison of the numerically calculated intensity profiles in using the equal phase and non-equiphase models with the experimentally measured intensity profiles given by Nemoto shows that in the x direction perpendicular to the junction plane, the non-equiphase Gaussian model is as good as the equal phase Gaussian model. Specifically, in the y direction parallel to the junction plane and the 45° direction with respect to the x axis in the xoy plane, the numerical results by using the non-equiphase model are in good agreement with the experimental data, as the propagation distance is larger than a certain value.     

Quasi-three-level Nd:YAG laser under diode pumping directly into the emitting level

We present theoretical and experimental investigations on ground-state direct pumping at 869 nm into the emitting level ⁴F_3/2 of end-pumped quasi-three-level Nd:YAG lasers operating at 946 nm. We have demonstrated, what we believe is for the first time, a Nd:YAG laser at 946 nm directly pumped by diodes and obtained 1.6 W of output power.     

The mechanism of the CW sodium-vapor/hydrogen laser

Measurements have been carried out to gain information on the mechanism of the cw 9 m sodium-vapor/hydrogen laser [2]. Observations were carried out on the laser excited with both cw and pulsed discharges and the low-power gain of various gas mixtures was measured using tunable diode lasers. The laser was found to oscillate with mixtures of sodium vapor with H₂, D₂ and HD, but with no other gas. On substituting D₂ for H₂ a more than three-fold increase in laser gain was observed. The results showed that most of the processes used to explain lasing action in other metal-vapor lasers were not applicable to the present case. It was concluded that the primary process which leads to the production of the population inversion involves differential quenching of the laser levels by molecular hydrogen, with the lower 3D level being quenched more efficiently than the upper 4P level. Measurements carried out on the calcium/hydrogen laser [21] with D₂ supported these conclusions.     

Near-infrared trace-gas sensors based on room-temperature diode lasers

2 monitor designed for field applications using room-temperature diode lasers are presented. Near-infrared DFB lasers operating at 1.57 μm and around 2.0 μm have been used for CO₂ measurements. At ambient concentration levels a resolution of more than two orders of magnitude has been demonstrated at 1.57 μm, at 2 μm the precision is in the order of 0.1 ppm CO₂, and for trace analysis a detection limit of 10 ppb has been obtained. The measurements demonstrate the capability of near-infrared DFB diode lasers for the precise determination of CO₂ concentrations as required for climatological, medical, or industrial applications. Received: 24 February 1998/Revised version: 27 April 1998     

Passive Q-switching of short-length Tm-doped silica fiber lasers by polycrystalline Cr:ZnSe microchips

We demonstrate passive Q-switching of short-length double-clad Tm³⁺-doped silica fiber lasers near 2 μm pumped by a laser diode array (LDA) at 790 nm. Polycrystalline Cr²⁺:ZnSe microchips with thickness from 0.3 to 1 mm are adopted as the Q-switching elements. Pulse duration of 120 ns, pulse energy over 14 μJ and repetition rate of 53 kHz are obtained from a 5-cm long fiber laser. As high as 530 kHz repetition rate is achieved from a 50-cm long fiber laser at ∼10-W pump power. The performance of the Q-switched fiber lasers as a function of fiber length is also analyzed.     

26.3-W continuous-wave, diode-double-end-pumped all-solid-state Nd:GdVO4 laser operating at 1.34 μm

A high-power continuous-wave (CW) all-solid-state Nd:GdVO₄ laser operating at 1.34 μm is reported here. The laser consists of a low doped level Nd:GdVO₄ crystal double-end-pumped by two high-power fiber-coupled diode lasers and a simple plane-parallel cavity. At an incident pump power of 88.8 W, a maximum CW output of 26.3 W at 1.34 μm is obtained with a slope efficiency of 33.7%. To the best of our knowledge, this is the highest output at 1.34 μm ever generated by diode-end-pumped all-solid-state lasers.