Account of Thermal Flow Through Metal-Semimetal BiSb Contact Boundary for Determination of EHF Detector Volt-Watt Sensitivity

Bismuth, antimony and its alloys are the typical representatives of a class of semimetals, which electric conductance is lower in 10²-10³ times, than of usual well conducting an electrical current metals. The alloys bismuth with antimony have semi-conductor properties in wide area of compositions at temperatures below 77 °K. The semimetals are rather perspective materials from the point of view of their probable application in various devices [1,2,3].In present time the semimetal alloys BiSb have wide application in thermoelectric generators and refrigerators. In work [3] the opportunity of use of semimetals BiSb with percentage content of Bi and Sb from 8 % up to 25 % was shown as high-sensitivity and of small inertion indicators of the mm range radiation where thermoelectric effect is used. The principle of action of such indicators is based on occurrence of temperature gradient in a semimetal crystal BiSb that has two contacts of the various area with flowing electrical current. Basic element of such device is the dot contact metal - semimetal. One of the main characteristics is volt-watt sensitivity of metal-semimetal BiSb contact which calculating is shown in present work.     

Temperature dependence study of the quadrupole interaction of111Cd in antimony

A power law dependence has been observed for the temperature dependence of the quadrupole interaction of the 247 keV state of¹¹¹Cd in antimony, which is similar to that observed for¹²¹Sb and¹²³Sb in antimony.Supported in part by the US Energy Research and Development Administration.     

Estimation of rotational temperature of<Superscript>121</Superscript>Sb<Superscript>16</Superscript>O molecule

The (0,1), (0,0), (1,0) and (2,0) bands ofB →X system of antimony monoxide have been excited in rf discharge tube source and photographed in the 9th order of a two metre plane grating spectrograph (PGS-2). Intensity records of the rotational lines have been obtained. The intensity measurements ofQ andP branch lines of the above four bands andJ numberings are used to estimate the effective rotational temperature of the source emitting the spectrum of¹²¹Sb¹⁶O molecule. It is concluded that¹²¹Sb{ su16}O may be present inK type stars.     

Electron density distribution in BaPb<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Sb<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript>3</Subscript> superconducting oxides studied by double nuclear magnetic resonance methods

The effect of charge disorder on the formation of an inhomogeneous state of the electron system in the conduction band in BaPb_{1 − x} Sb _x O₃ superconducting oxides is investigated experimentally by NMR methods. The NMR spectra of ¹⁷O are measured systematically, and the contributions from ¹⁷O atoms with different cation nearest surroundings are identified. It is found that microscopic regions with an elevated spin density of charge carriers are formed within two coordination spheres near antimony ions. Nuclei of the superconducting phase of the oxide (regions with an elevated antimony concentration) microscopically distributed over the sample are detected in compounds with x = 0.25 and 0.33. Experiments in which a double resonance signal of the spin echo of ¹⁷O-²⁰⁷Pb and ¹⁷O-¹²¹Sb are measured in the metal phase of BaPb_{1 − x} Sb _x O₃ oxides are carried out for the first time. The constants of indirect heteronuclear spin-spin ¹⁷O-²⁰⁷Pb interaction are determined as functions of the local Knight shift ₂₀₇ Ks. The estimates of the constants of the indirect interaction between the nuclei of the nearest neighbors (O-Pb and Pb-Pb atoms) and analysis of evolution of the NMR spectra of ¹⁷O upon a change in the antimony concentration are convincing evidence in favor of the development of a microscopically inhomogeneous state of the electron system in the metal phase of BaPb_{1 − x} Sb _x O₃ oxides.     

Mössbauer study of Zn x Ni5/3−x Fe1Sb1/3O4 spinel ferrite

The antimony substituted nickel ferrite Zn_xNi_5/3–xFe₁Sb_1/3O₄ with different values ofx are prepared, checked by x-ray and studied with⁵⁷Fe Mössbauer spectroscopy over a wide temperature range. Characteristic spectra of paramagnetic, magnetic and electronic relaxation types for the different compositions have been observed. The interpretation of the spectra allows the cation distribution of the compounds to be deduced. The Mössbauer effect parameters at different temperatures are calculated and their dependence on the substitution of non-magnetic Zn⁺² for the magnetic nickel ions are discussed. The temperature dependence of the hyperfine magnetic fields and the respective Néel temperature points are obtained.     

The ESR study of single crystal spinel ZnCr2Se4 diluted with Sb and V

The single crystal of Sb³⁺ and V³⁺ doped zinc chromium selenide spinel ZnCr₂Se₄ were prepared by a chemical transport method and characterized by ESR spectroscopy in order to examine the effect of nonmagnetic antimony and magnetic vanadium on properties of the system. For antimony admixtures the Neel temperature is very similar to that of the parent spinel ZnCr₂Se₄ (22 K). However, upon incorporating vanadium ions, the T_N temperature decreases down to 17.5 K, determined for the maximum vanadium content (x=0.06). The temperature dependence of the ESR linewidth over paramagnetic region is interpreted by an occurrence of spin-phonon interaction. The strong broadening linewidth together with its strong temperature dependence for vanadium doped ZnCr₂Se₄ is explained by the complex paramagnetic relaxation model.     

Rotational analysis of the (f0, e0)-X21 transition of the antimony monofluoride molecule

A rotational analysis is performed on the 0-0 band of the so called C₂ band system of antimony monofluoride. The results show that the band actually consits of two transitions designated as the f0⁺-X₂1 and e0⁻-X₂1 transitions.     

A search for a thermal spike effect in sputtering

The temperature dependence of the sputtering yield was measured for lOOkeV per atom bombardment of silver with molecular and atomic antimony ions. No exponential increase of the yield was found in the temperature range from 25° to 775 °C, although a pronounced nonlinear effect is observed when the yield of these projectiles is compared,Y(Sb ₂ ⁺ )≈ 1.5×[2Y(Sb⁺)]. We conclude that there is no influence of the lattice temperature on collision spikes.     

Rutherford backscattering study of crystal orientation dependent annealing effects in high-dose antimony implanted silicon

High dose implantations (10¹⁶ ions/cm²) of antimony in silicon result in concentrations far above the solid solubility of antimony in silicon. Rutherford backscattering was used to study the behaviour of damage and antimony concentration profiles for 〈100〉 and 〈111〉 substrates. The measurements were performed for various annealing treatments, implantation temperatures and implantation energies. A crystal orientation dependent outdiffusion of antimony towards the surface, a highly supersaturated phase of substitutional antimony at 600°C and a strong reverse annealing effect at higher temperatures were found.     

Selective X-ray generation by heavy ions (Part 2) measurement of the concentration distribution of ion-implanted antimony in silicon by the use of selective heavy ion X-ray excitation

This investigation demonstrates how the total, concentration distribution of antimony, previously implanted into silicon at 100 keV, may be elucidated without recourse to the usual radioactive isotope techniques. It uses the fact that 100 keV Kr⁺ ions can preferentially excite characteristic X-rays from antimony, even in the presence of a huge excess of silicon. The resultant high sensitivity for the detection of antimony in silicon is accompanied by the fact that the X-rays arise predominantly from less than one hundred Angstroms below the surface of the specimen. Thus bombardment by 100 keV Kr⁺ íons is used ín conjunction with an anodic stripping technique (which removes 169±20 Å at a time) to obtain the antimony distribution profile in silicon. Consideration is also given to the possibility of obtaining the implanted antimony range distribution by using 100 keV Kr⁺ ions to detect the antimony and simultaneously remove silicon by sputtering.     

Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors

A battery drivable low-voltage transparent lightly antimony（Sb）-doped SnO2 nanowire electric-double-layer （EDL） field-effect transistor （FET） is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capacitance （- 2.14 μF/cm2） directly bound up with mobile ions-induced EDL （sandwiched between the top and bottom electrodes） effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm2/V. s, current on/off ration of 2 × 104, and subthreshold gate voltage swing （S = dVgs/d（logIds）） of 140 mV/decade. The threshold voltage Yth （0.1 V） is estimated which indicates that the SnO2 namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by a microporous SiO2-based solid electrolyte is very promising for battery-powered portable nanoscale sensors.     

Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ − SR method

The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×10¹³ cm⁻³) and antimony (Sb: 2×10¹⁸ cm⁻³) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the muon spin in the temperature range 4–300 K. The relaxation rate and shift of the precession frequency in the silicon sample with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the acceptor center _μ A1 at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 61–66 (10 July 1998)     

Properties of InSb p-n junctions fabricated by Zn implantation with subsequent drive-in diffusion

Abstract

A model for the impurity redistribution in heavily doped silicon layers suggested by Mathiot and Pfister⁶ is modified. Two channels of impurity diffusion are taken into account: a redistribution of impurity inside of a percolation cluster and a standard diffusion outside of that cluster. The parameters of the model are identified for the case of rapid thermal annealing of antimony in silicon. The modified model better describes the observed diffusivity dependences on temperature and doping level.     

Synthesis and characterization of single- and co-doped SnO2 thin films for optoelectronic applications

Doped SnO₂ thin films have been prepared by sputtering from two different targets: antimony doped tin oxide (ATO) and antimony and zinc doped tin oxide (AZTO). In the case of ATO ceramic, the antimony amount only reaches 0.012 mol per formula unit due to its evaporation at high temperature while the presence of Zn²⁺ in AZTO prevents the antimony evaporation, greatly enhances the ceramic density and allows the deposition of thin films with a high deposition rate. Both types of thin films have a dense morphology with a smooth surface and they are polycrystalline. For post-annealed ATO thin films, the Drude model was applied to deduce the carrier concentration, the optical mobility as well as the resistivity. The carrier concentration is around ten times higher for ATO thin films compared to AZTO. The two combined effects (higher carrier concentration and mobility) for ATO thin films doped with 1.2% of Sb lead to the best optoelectronic performances, confirming previous results obtained with ceramics. Nevertheless, we have a better opportunity to modulate the conductivity in the case of AZTO thin films.     

The thermal expansion of axial metals

The thermal expansion of axial metals is surveyed with particular reference to recent very low temperature data for zinc, cadmium, magnesium, β-tin, indium, bismuth and antimony. For a given solid, the independent thermal expansion coefficients α_⊥ and α_‖ are conveniently compared at low temperatures by plotting α_⊥/T ³ and α_‖/T ³ against T. The plots show clearly how contraction in one principal symmetry direction ensues from rapid expansion in the other direction. The Grüneisen functions γ_⊥ and γ_‖ are discussed for each solid using data from lattice-dynamical models and neutron-diffraction measurements. They show how features of the individual thermal expansions arise from a combination of vibrational, elastic and electronic effects. For these solids and for zirconium, titanium, yttrium and thallium the larger of γ_⊥ and γ_‖ at high temperatures is that referring to strains in the direction of the stronger forces (judged from the axial ratio). At lower temperatures the inequality reverses, except for tin, implying that the highest normal-mode frequencies depend most strongly on strain in the direction of the stronger forces. More experimental studies of thermal expansion at the lowest temperatures are desirable, as well as more second and third-order elastic constant data. Theoretical work is needed on realistic lattice models applicable to non-cubic metals.     

Study on Stereochemical Activity of Lone Pair Electrons in Sulfur and Halogen Coordinated Antimony(III) Complexes by 121Sb Mössbauer Spectroscopy

We have measured ¹²¹Sb Mössbauer spectra at 20 K for 52 compounds of antimony(III). An Sb(III) atom with the electron configuration [Kr] 4d ¹⁰5s ² has a lone pair electrons. The stereochemical property of the lone pair has been found to depend very much on the kinds of atoms surrounding the antimony atom and the configurations of the coordinating atoms.     

The quantum size effect in thin antimony films

Thin antimony films have been epitaxially deposited at 350K onto cleavage surfaces of mica at different residual gas pressures between 10^?5 and 10^?9 torr, and their resistivity ? measured as a function of film thicknessd≦500Å at temperaturesT=110K andT=300K. The ?(d) characteristics of films deposited at residual gas pressures of about 10^?6 torr with condensation rates of about 1Å/s showed generally decreasing slopes as film thicknesses increased, but irregularities in detail. The ?(d) characteristics of films deposited at 10^?8 torr with the same condensation rate decreasing with increasingd, too, show no such irregularities but very small regular variations of ?(d) with constant oscillation length Δd between the maxima, and decreasing amplitudes with increasingd. These variations are better recognizable in a modified ?(d) graph. We tend to interprete these variations by the quantum size effect as we found oscillation lengths and amplitudes compatibel with theory.

     

Effect of antimony doping on the low‐temperature performance of solution‐processed indium oxide thin film transistors

The effects of antimony (Sb) doping on solution‐processed indium oxide (InO_x) thin film transistors (TFTs) were examined. The Sb‐doped InSbO TFT exhibited a high mobility, low gate swing, threshold voltage, and high I_ON/OFF ratio of 4.6 cm²/V s, 0.29 V/decade, 1.9 V, and 3 × 10⁷, respectively. The gate bias and photobias stability of the InSbO TFTs were also improved by Sb doping compared to those of InO_x TFTs. This improvement was attributed to the reduction of oxygen‐related defects and/or the existence of the lone‐pair s‐electron of Sb³⁺ in amorphous InSbO films. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Estimation of the value of ΔR/R for121Sb nucleus by means of Mössbauer spectroscopy and molecular orbital calculation

The¹²¹Sb Mössbauer spectra of rapidly frozen solutions of antimony compounds were observed. The isomer shifts were compared with the electron density at the antimony nucleus calculated with the ab initio molecular orbital method. A value ΔR/R=?(11±2)×10^?4 was derived for the 37.15 keV M1 transition of¹²¹Sb.     

The measurement of cone length and range in etched plastics

Abstract

Group V impurities implanted at 400 keV into silicon have been detected in substitutional lattice positions by EPR. Three samples of VFZ, p-type 1200–1500 ohm-cm silicon from the same ingot were implanted with As⁷⁵, Sb¹²¹, and Sb¹²³, respectively. The EPR spectrum of each implanted substitutional impurity was observed after annealing the lattice damage. Only the isotope implanted in each sample was seen. Since only those donors which are electrically active can be observed, this technique measures the electrically active fraction of the implanted species. Upon annealing to 970°C, most of the antimony was active whereas only about 1/5 of the arsenic was observed. Comparisons with backscattering results indicate that between 350 and 600°C, ～95 per cent of the implanted antimony is substitutional but ～0 per cent is electrically active. The increase in electrical activity at 600°C is due to the rise of the Fermi level to the donor level as the residual lattice damage anneals. The paramagnetic damage centers observed were those also seen in oxygen-implanted silicon, Si-P3 and Si-Pl, but the Si-P3 center was not as well resolved and grows upon annealing to 200°C.