Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

We investigated the effect of different annealing atmospheres on contact behaviour of Ni/Au contacts on moderately doped p-GaN layers. We used the annealing gases N₂, O₂, Ar, and forming gas (N₂/H₂) at varying annealing temperatures from 350°C to 650°C in steps of 50°C. The p-GaN samples were either metalorganic chemical vapor deposition or molecular beam epitaxy grown. Contact characterization was done after each annealing step by using the circular transmission line model. Specific contact resistances were determined to be in the low 10⁻⁴ Ω cm² range for oxidized contacts. Accompanying chemical analysis using depth resolved Auger electron spectroscopy revealed that NiO was formed and Au diffused towards the interface, whereas annealing in forming gas prevented oxidation and did not lead to Ohmic behaviour.     

Effect of heat treatment on phase transformation of aluminum nitride ultrafine powder prepared by chemical vapor deposition

Ultrafine aluminum nitride (AlN) powders were obtained by chemical vapor deposition via AlCl₃–NH₃–N₂ system operated at various temperatures and at a same 200 cm³/min flow rate of NH₃ and N₂, respectively. It has been shown that when the reaction temperature of AlCl₃ and NH₃ was above 600°C, then crystalline AlN powder can be formed; whereas, amorphous AlN was obtained with NH₄Cl if reacted in a lower-temperature zone of the reaction chamber. The amorphous AlN powder was heat treated at 1400°C under NH₃ and N₂ atmosphere for 2 h, then the crystalline phases of the obtained powder belong to a single phase of AlN; a mixture of AlN and Al₂O₃ and only AlON, respectively. On the other hand, if crystalline AlN powder is heat treated at 1400°C under N₂ atmosphere for 2 h, the crystalline phases were composed of the major phase of AlN and a minor phase of Al₂O₃. The morphology, particle size and agglomerate size of the AlN powder were strongly dependent on the heat-treatment temperature. The particle size of AlN powder increases from 28.1 to 45.0 nm, as the heat treatment temperature increases from 800 to 1400°C.     

不同退火条件对PEALD制备的Ga2O3薄膜特性的影响

利用等离子增强原子层沉积技术(PEALD)在c面蓝宝石衬底上制备了氧化镓(Ga₂O₃)薄膜,研究了退火气氛(v(N₂)∶v(O₂)=1∶1(体积比)、空气和N₂)及退火时间对Ga₂O₃薄膜晶体结构、表面形貌和光学性质的影响。研究结果表明,退火前的氧化镓处于亚稳态,不同退火气氛下退火后晶体结构发生明显改变,而且退火气氛中N₂比例增加有利于Ga₂O₃重结晶。在N₂气氛下退火达到30 min,薄膜结构已由亚稳态转变成择优取向的β-Ga₂O₃。而且表面形貌分析表明,退火30 min后表面形貌开始趋于稳定,表面晶粒密度不再增加。另外实验样品在 400~800 nm的平均透射率几乎是100%,且光吸收边陡峭。采用N₂气氛退火,对于富氧环境下沉积的Ga₂O₃更利于薄膜表面原子迁移,以及择优取向Ga₂O₃重结晶。     

Influence of oxygen contamination during Si low presure vapour phase epitaxy on epitaxial layer quality

The influence of oxygen contamination on Si low pressure vapour phase epitaxy (LPVPE) at 800°C in the SiCl₂H₂−H₂ system has been investigated. O₂ was added intentionally with partial pressures between 10⁻⁸ and 2×10⁻⁴ mbar. The quality of the epitaxially grown silicon layers was determined by comparing surface morphology, defect density, Schottky diode characteristics and SIMS measurements. These four parameters are correlated and they reveal a drastic decrease in epitaxial layer quality for O₂ pressures above 15×10⁻⁶ mbar. The critical oxygen pressure which has been until now considered as a limit for epitaxial growth can therefore be exceeded by one order of magnitude.     

On the use of remote RF plasma source to enhance III–V MOCVD technology

A remote RF (13.56 MHz) plasma source, assembled on a metalorganic chemical vapour deposition (MOCVD) system, was used to investigate the processes of (a) cleaning and passivation of InP substrates with H atoms (H₂ plasmas), (b) deposition of InP epilayers from In(CH₃)₃ and PH_x radicals (PH₃/H₂ plasmas), and (c) deposition of InN on sapphire from In(CH₃)₃ and N atoms (N₂---H₂---Ar plasmas). From kinetic and spectroscopic ellipsometric in situ analysis, the removal of native oxide from InP surface was found to be complete, without surface damage (phosphorus depletion), at 230°C and 7 min of H atoms exposure. The growth of InP epilayers with PH₃ plasma pre-activation was successful (stoichiometric InP) even at low V/III ratio. During InN growth, the use of optical emission spectroscopy (OES) and of in situ ellipsometry (SE) was determinant for the process control.     

Growth of Bi-Sr-Ca-Cu-O based superconducting whiskers

Superconducting whiskers of the Bi system have been grown by heating a glassy melt-quenched plate in a stream of O₂ gas. We have examined the growing phase and superconductivity of the whiskers grown at the different heating and cooling conditions. The Bi₂Sr₂CaCu₂O₈ (2212 phase) whiskers are grown from a wide range of initial compositions when the melt-quenched plates are heated at 840°C. The Bi₂Sr₂CuO₆ (2201) phase is dominant in the whiskers grown at lower temperature, 820 and 810°C. The growing pure 2223 whiskers have not been obtained so far. For the superconductivity of the 2212 whiskers, high oxygen partial pressure (P_O2, rapid cooling and higher heating temperature are preferable. Low P_O2 and slow cooling are preferable for the 2223 phase contained in the 2212 whiskers as a minor part. Heating time does not give remarkable effects on the growing phase and superconductivity.     

Identification of gaseous oxygen and nitrogen in bubble inclusions in Bi4(GeO4)3 (BGO) crystals by means of Raman spectroscopy

Bubble inclusions in BGO crystals have been studied by means of Raman spectoscopy. Since the crystals were grown under ambient atmospheric conditions, we focused our attention on oxygen and nitrogen. Both species are diatomic homonuclear molecules which are vibrationally Raman active. Concerning the vibrational part of the O₂ and N₂ Raman spectra, no evidence was found for the presence of both gases. However, in the spectrum below the lowest 64 cm^-1 energy mode of BGO three faint peaks were found which show the characteristic features of the rotational spectra of O₂ and N₂. It was found that the composition of the inclusion atmosphere was enriched by oxygen compared to the composition of the air.     

Influence of oxygen, hydrogen, helium, argon and vacuum on the surface behavior of molten InSb, other semiconductors, and metals on silica

Sessile drop experiments were performed on molten indium antimonide on clean quartz (fused silica) surfaces. A cell was constructed through which argon, helium, oxygen, hydrogen or a mixture of these was flowed at 600 °C. Some of the InSb was doped with 0.1% Ga. The surface tension σ of oxide-free molten InSb was smaller in Ar than in He, may have increased with increasing O₂ in the gas, and was not influenced by Ga or H₂. The contact angle θ on silica was higher in the presence of Ar, was lowered by O₂, and was not influenced by H₂ or Ga. The work of adhesion W and the surface energy σ_sv of the silica were higher in He than in Ar. The surface remained free of solid oxide only in flowing gas containing 0.8 ppm O₂. This behavior is attributed to reaction of O₂ at the surface of the melt to form In₂O gas. When solid oxide formed on Ga-doped material, it was strongly enriched in Ga, with the Ga/In ratio increasing with the concentration of O₂ in the gas.

Examination of published sessile-drop results for liquid metals and semiconductors on silica revealed that W and σ_sv were highest for reactive melts, in which SiO₂ dissolves. For non-reactive melts, W and σ_sv were lower and θ higher in a gas than in a vacuum, regardless of whether the experiments had been carried out in sealed ampoules, a flowing gas, or dynamic vacuum. The implication is that the surface of silica was different in a vacuum than in a gas at 1 bar.     

Crystallization of lithium metasilicate from lithium disilicate glass

The crystallization behavior of lithium disilicate glass powder heated in molten LiNO₃ salt was investigated using X-ray diffraction techniques. Heat treatment at 500°C with LiNO₃ molten salt caused a lithium metasilicate, Li₂SiO₃, crystal phase to appear after 5–96 h. By contrast, glass powder heat-treated in air at 500°C remained amorphous after 5 h and turned into lithium disilicate, Li₂Si₂O₅, crystal after 40 h. Qualitatively similar results were obtained at 400°C. Glass powder heat-treated at 575°C in both molten salt and in air turned into lithium disilicate crystal. Metasilicate crystallization occurs with LiNO₃ molten salt at 500 and 400°C due to the incorporation of lithium into the sample glass powder from the melt during crystallization. An increase in lithium content in the sample after molten salt heat treatment was confirmed by chemical analysis using dc plasma emission spectroscopy.     

Growth and properties of Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 single crystals directly from melt

Pb[(Zn_1/3Nb_2/3)_0.91Ti_0.09]O₃ (PZNT91/9) single crystals were grown by a modified Bridgman method directly from melt using an allomeric Pb[(Mg_1/3Nb_2/3)_0.69Ti_0.31]O₃ (PMNT69/31) single crystal as a seed. X-ray diffraction (XRD) measurement confirmed that the as-grown PZNT91/9 single crystals are of pure perovskite structure. Electrical properties and thermal stabilization of PZNT91/9 crystals grown directly from melt exhibit different characters from those of PZNT91/9 crystals grown from flux, although segregation and the variation of chemical composition are not seriously confirmed by X-ray fluorescence analysis (XPS). The [0 0 1]-oriented PZNT91/9 crystals cut from the middle part of the as-grown crystal boules exhibit broad dielectric-response peaks at around 105 °C, accompanied by apparent frequency dispersion. The values of piezoelectric constant d₃₃, remnant polarization P_r, and induced strain are about 1800–2200 pC/N, 38.8 μC/cm², and 0.3%, respectively, indicating that the quality of PZNT crystals grown directly from melt can be comparable to those of PZNT91/9 single crystals grown from flux. However, further work deserves attention to improve the dielectric properties of PZNT crystals grown directly from melt. Such unusual characterizations of dielectric properties of PZNT crystals grown directly from melt are considered as correlating with defects, microinhomogeneities, and polar regions.     

Correlation between interfacial structure and c-axis-orientation of LiNbO3 films grown on Si and SiO2 by electron cyclotron resonance plasma sputtering

Thin films of crystalline lithium niobate (LN) grown on Si(1 0 0) and SiO₂ substrates by electron cyclotron resonance plasma sputtering exhibit distinct interfacial structures that strongly affect the orientation of respective films. Growth at 460–600 °C on the Si(1 0 0) surface produced columnar domains of LiNbO₃ with well-oriented c-axes, i.e., normal to the surface. When the SiO₂ substrate was similarly exposed to plasma at temperatures above 500 °C, however, increased diffusion of Li and Nb atoms into the SiO₂ film was seen and this led to an LN–SiO₂ alloy interface in which crystal-axis orientations were randomized. This problem was solved by solid-phase crystallization of the deposited film of amorphous LN; the degree of c-axis orientation was then immune to the choice of substrate material.     

Effect of NH3 on the growth characterization of TiN films at low temperature

Titanium nitride (TiN) films were obtained by the atmospheric pressure chemical vapor deposition method of the TiCl₄–N₂–H₂ system with various flow rates of NH₃ at 600°C. The growth characteristics, morphology and microstructure of the TiN films deposited were analyzed by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Without NH₃ addition, no TiN was deposited at 600°C as shown in the X-ray diffraction curve. However, by adding NH₃ into the TiCl₄–N₂–H₂ system, the crystalline TiN was obtained. The growth rate of TiN films increased with the increase of the NH₃ flow rate. The lattice constant of TiN films decreased with the increase of the NH₃ flow rate. At a low NH₃ flow rate, the TiN (2 2 0) with the highest texture coefficient was found. At a high NH₃ flow rate, the texture coefficient of TiN (2 0 0) increased with the increase of the NH₃ flow rate. In morphology observation, thicker plate-like TiN was obtained when the NH₃ flow rate was increased. When the flow rate of NH₃ was 15 sccm, Moiré fringes were observed in the TiN film as determined by TEM analysis. The intrinsic strain was found in the TiN film as deposited with 60 sccm NH₃.     

Novel single source precursors for MOCVD of AlN, GaN and InN

The MOCVD of AlN, GaN and InN thin films using the novel single source precursors (N₃)₂Ga[(CH₂)₃NMe₂] (1), (N₃)In[(CH₂)₃NMe₂]₂ (2), (N₃)Al[(CH₂)₃NMe₂]₂ (3) and (N₃)AlMe₂(H₂N^tBu) (4) is reported. The compounds are non-pyrophoric. Compound 3 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (AlN, GaN) or polycrystalline (InN) growth at least 200°C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.     

Analysis of precursor residues in lithium aluminosilicate gels using XPS and RGA

Lithium aluminosilicate gels of composition 15 mol% lithia-2 mol% alumina-83 mol% silica were prepared by adding nitrates to tetraethyl-orthosilicate (TEOS) and going through the sol-gel process. Samples were prepared in thin film and bulk form. Dried and outgassed samples were studied with X-ray photoelectron spectroscopy (XPS) d residual gas analysis (RGA). XPS spectra show similar species in both thin film and bulk samples, but different relative quantities of each species. Some oxidation of organic groups by nitrate is evident in bulk samples which were heated to 70°C during the drying process. In both thin film and bulk samples, the O 1s spectra indicate oxygens associated with a silicate network and higher binding energy species such as - -O-. The C 1s spectra of bulk gels heated to 140° and 350°C in vacuum show some organics are vaporized at low temperature, while the oxidized-organic residues are decomposed to CO₂ at high temperature. These species are also observed with residual gas analysis at the corresponding temperatures.     

Structure and thermal stability of MOCVD ZrO2 films on Si (1 0 0)

The structure and thermal stability of ZrO₂ films grown on Si (1 0 0) substrates by metalorganic chemical vapor deposition have been studied by high-resolution transmission electron microscopy, selected area electron diffraction and X-ray energy dispersive spectroscopy. As-deposited films consist of tetragonal ZrO₂ nanocrystallites and an amorphous Zr silicate interfacial layer. After annealing at 850°C, some monoclinic phase is formed, and the grain size is increased. Annealing a 6 nm thick film at 850°C in O₂ revealed that the growth of the interfacial layer is at the expense of the ZrO₂ layer. In a 3.0 nm thick Zr silicate interfacial layer, there is a 0.9 nm Zr-free SiO₂ region right above the Si substrate. These observations suggest that oxygen reacted with the Si substrate to grow SiO₂, and SiO₂ reacted with ZrO₂ to form a Zr silicate interfacial layer during the deposition and annealing. Oxygen diffusion through the tetragonal ZrO₂ phase was found to be relatively easier than through the monoclinic phase.     

Sodium borosilicate glasses prepared by the sol-gel process

A sodium borosilicate gel of composition 80SiO₂·15B₂O₃·5Na₂O (wt%) was prepared from tetraethyl orthosilicate, trimethyl borate, sodium methylate, H₂O, and HCl as the catalyst. Variation of specific surface area and porosity as a function of heating temperature indicated that closed pores were opened at temperatures lower than 400°C and collapsed above 450°C. From TG and DTA curves, about 19% Si and B atoms are evaluated to have −OH bonds. X-ray diffraction patterns indicated crystallization of low-cristobalite out of the gel when it was heated at 700°C for 5 h, showing a difference from a melt-quenched glass of the same composition.     

Characterization and chemical durability of 70Ph2SiO·30TiO2 coating prepared by the sol-gel process

70Ph₂SiO·30TiO₂ coatings on slide glass and phosphate glass substrates have been prepared by the sol-gel process. Experimental results on the characterization and chemical durability of the coatings are presented. It is shown that the coatings heated at 150°C have reasonably good acid and water resistance while their alkali durability is very poor. The XPS results are used to verify the different corrosion behaviors of the coating in pure water and 1N HC1 solutions. The chemical durability of phosphate glass can be significantly improved by this coating.     

Surface nitridation of a phosphate glass

Phosphate glass surfaces were nitrided by reacting them in dry ammonia at temperatures near the glass transition temperature (T_g) for up to 100 h. These treatments have significant effects on surface dependent glass properties. For example, the dissolution rate of a sodium-barium phosphate glass (T_g = 345°C) decreased by over an order of magnitude after 24 h in ammonia at T_g. X-ray photoelectron spectroscopic (XPS) analyses show that nitrogen in chemically incorporated into the glass structure at levels up to 3–5 at.%. Elemental depth profiles, obtained by XPS (for N) and by elastic recoil detection (ERD) analyses (for N and H), indicate that the surface oxynitrile layer extends to about 1 μm in depth. XPS analyses of in situ treated samples reveals the presence of several nitrogen species which affect the surface dependent properties by increasing the structural crosslink density of the glass surface.     

Structural difference of surface and sub-surface native oxides of evaporated amorphous silicon

Evaporated amorphous silicon (a-Si) films, oxidized in air or O₂ at room temperature, present two native oxides with different structures. The surface oxide is constructed from SiO₄-tetrahedron structural units with a 110° O---Si---O angle, which is the common structural unit of stable silicon oxides. The internal oxide has a different structure having a 120° O---Si---O angle. The results of molecular orbital (MO) calculations for (SiO₃)^m− and (SiO₄)ⁿ⁻ anionic clusters support the presence of the two stable structures of silicon oxides and also reveal the importance of the ionic character of the oxidized sites.     

Migration of Cu ions in Cu2O---Al2O3---SiO2 glasses on heating in air

The behavior of copper ions in the Cu₂O·Al₂O₃·4SiO₂ (in moles) glass on heating in air at temperatures up to 500°C was studied. When the glass, in which about 90% of Cu was present as Cu⁺ ions, was heated in air above 300°C, a CuO layer was formed on the surface. The amount of CuO was increased with heating temperature and time, corresponding to the decrease in weight of the glass. Furthermore, the fraction of Cu²⁺ ions in the glass increased. These observations suggest that oxygens do not diffuse into the glass, but Cu⁺ ions migrate to the surface from the interior to balance the surplus positive charge produced by the oxidation of Cu⁺ to Cu²⁺ ions inside the glass. The following reaction scheme for the formation of the CuO layer was proposed; 2Cu⁺(interior) + ₂¹O₂(surface) → Cu²⁺(interior) + CuO(surface).