Density functional theory (DFT) calculations have been performed on tunable numbers of gallium arsenide (100), (110), and (111) planes for their electron density of states (DOS) plots and the corresponding band diagrams. The GaAs (100) and (110) planes show the same semiconducting band structure with tunable plane layers and a band gap of 1.35 eV around the Fermi level. In contrast, metal‐like band structures are obtained with a continuous band structure around the Fermi level for 1, 2, 4, 5, 7, and 8 layers of GaAs (111) planes. For 3, 6, and 9 GaAs (111) planes, the same semiconducting band structure as seen in the (100) and (110) planes returns. The results suggest the GaAs {111} face should be more electrically conductive than its {100} and {110} faces, due to the merged conduction band and valence band. GaAs (100) and (110) planes give a fixed work function, but the (111) planes have variable work function values that are smaller than that obtained for the (100) and (110) planes. Furthermore, bond length, bond geometry, and frontier orbital electron number and energy distribution show notable differences between the metal‐like and semiconducting plane cases, so the emergence of plane‐dependent electronic properties have quantum mechanical origin at the orbital level. GaAs should possess similar facet‐dependent electronic properties to those of Si and Ge. 相似文献
Gold nanocubes, octahedra, and rhombic dodecahedra were examined for facet‐dependent catalytic activity in the formation of triazoles. Rhombic dodecahedra gave 100 % regioselective 1,4‐triazoles. The product yield was increased by decreasing the particle size. However, a mixture of 1,4‐ and 1,5‐triazoles was obtained in lower yields when cubes and octahedra of similar sizes were used. The lowest Au‐atom density on the {110} surface and largest unsaturated coordination number of surface Au atoms may explain their best catalytic efficiency and product regioselectivity. Various spectroscopic techniques were employed to verify the formation of the Au–acetylide intermediate and establish the reaction mechanism, in which phenylacetylene binds to the Au {110} surface through the terminal‐binding mode to result in the exclusive formation of 1,4‐triazoles. The smallest rhombic dodecahedra can give diverse 1,4‐disubstituted triazoles in good yields by coupling a wide variety of alkynes and organic halides. 相似文献
To find out if germanium possesses facet‐dependent electrical‐conductivity properties, surface‐state density functional theory (DFT) calculations were performed on one to six layers of germanium (100), (110), (111), and (211) planes. Tunable Ge(100) and Ge(110) planes always present the same semiconducting band structure with a band gap of 0.67 eV expected of bulk germanium. In contrast, one, two, four, and five layers of Ge(111) and Ge(211) plane models show metal‐like band structures with continuous density of states (DOS) throughout the entire band. For three and six layers of Ge(111) and Ge(211) plane models, the normal semiconducting band structure was obtained. The plane layers with metal‐like band structures also show Ge−Ge bond‐length deviations and bond distortions, as well as significantly different 4s and 4p frontier‐orbital electron counts and relative percentages integrated over the valence and conduction bands from those of the semiconducting state. These differences should contribute to strikingly dissimilar band structures. The calculation results suggest the observation of facet‐dependent electrical‐conductivity properties of germanium materials; when making transistors from germanium, the facet effects with shrinking dimensions approaching 3 nm may also need to be considered. 相似文献
The typical two‐dimensional (2D) semiconductors MoS2, MoSe2, WS2, WSe2 and black phosphorus have garnered tremendous interest for their unique electronic, optical, and chemical properties. However, all 2D semiconductors reported thus far feature band gaps that are smaller than 2.0 eV, which has greatly restricted their applications, especially in optoelectronic devices with photoresponse in the blue and UV range. Novel 2D mono‐elemental semiconductors, namely monolayered arsenene and antimonene, with wide band gaps and high stability were now developed based on first‐principles calculations. Interestingly, although As and Sb are typically semimetals in the bulk, they are transformed into indirect semiconductors with band gaps of 2.49 and 2.28 eV when thinned to one atomic layer. Significantly, under small biaxial strain, these materials were transformed from indirect into direct band‐gap semiconductors. Such dramatic changes in the electronic structure could pave the way for transistors with high on/off ratios, optoelectronic devices working under blue or UV light, and mechanical sensors based on new 2D crystals. 相似文献
In the framework of the self‐interaction‐free time‐dependent density‐functional theory (TDDFT), we have performed three‐dimensional ab initio calculations of Ne atoms in near‐infrared (NIR) laser fields subject to excitation by a single extreme ultraviolet (XUV) attosecond pulse (SAP). The TDDFT equations are solved accurately and efficiently by means of the time‐dependent generalized pseudo spectral (TDGPS) method. We have explored the transient dynamical behavior of the sub‐cycle high harmonic generation (HHG) for transitions from the excited states to the ground state and found oscillation structures with respect to the time delay between the SAP and NIR fields. We investigate the harmonic emission spectrum from singly excited state 2p3s, 2p4s, 2p3d, 2p5s, 2p4d and 2p6s, 2p5d and the virtual states 2p3p‐, 2p4f‐ and 2p4p+ as the function of time delay. We explore the sub‐cycle Stark shift phenomenon in NIR fields and its influence on the photon emission process. Our analysis reveals several novel features of the sub‐cycle transient HHG dynamics and spectra, the quantum interference pattern between different multiphoton excitation pathways, and we identify the mechanisms responsible for the observed peak splitting in the photon emission spectra. 相似文献
Chemical functionalization of various hydrocarbons, such as coronene, corannulene, and so forth, shows good promise in electronics applications because of their tunable optoelectronic properties. By using quantum chemical calculations, we have investigated the changes in the corannulene buckybowl structure, which greatly affect its electronic and optical properties when functionalized with different electron‐withdrawing imide groups. We find that the chemical nature and position of functional groups strongly regulate the stacking geometry, π‐stacking interactions, and electronic structure. Herein, a range of optoelectronic properties and structure–property relationships of various imide‐functionalized corannulenes are explored and rationalized in detail. In terms of carrier mobility, we find that the functionalization strongly affects the reorganization energy of corannulene, while the enhanced stacking improves hopping integrals, favoring the carrier mobility of crystals of pentafluorophenylcorannulene‐5‐monoimide. The study shows a host of emerging optoelectronic properties and enhancements in the charge‐transport characteristics of functionalized corannulene, which may find possible semiconductor and electronics applications. 相似文献
As a first example, herein we show that g‐Si4N3 is expected to act as a metal‐free ferromagnet featuring both charge and spin current rectification simultaneously. Such rectification is crucial for envisioning devices that contain both logic and memory functionality on a single chip. The spin coherent quantum‐transport calculations on g‐Si4N3 reveal that the chosen system is a unique molecular spin filter, the current‐voltage characteristics of which is asymmetric in nature, which can create a perfect background for synchronous charge and spin current rectification. To shed light on this highly unusual in‐silico observation, we have meticulously inspected the bias‐dependent modulation of the spin‐polarized eigenstates. The results indicate that, whereas only the localized 2p orbitals of the outer‐ring (OR) Si atoms participate in the transmission process in the positive bias, both OR Si and N atoms contribute in the reverse bias. Furthermore, we have evaluated the spin‐polarized electron‐transfer rate in the tunneling regime, and the results demonstrate that the transfer rates are unequal in the positive and negative bias range, leading to the possible realization of a simultaneous logic–memory device. 相似文献
A series of cobalt‐doped germanium clusters, CoGen?/0 (n=2–11), are investigated by using anion photoelectron spectroscopy combined with density functional theory calculations. For both anionic and neutral CoGen (n=2–11) clusters, the critical size of the transition from exo‐ to endohedral structures is n=9. Natural population analysis shows that there is electron transfer from the Gen framework to the Co atom at n=7–11 for both anionic and neutral CoGen clusters. The magnetic moments of the anionic and neutral CoGen clusters decrease to the lowest values at n=10 and 11. The transfer of electrons from the Gen framework to the Co atom and the minimization of the magnetic moments are related to the evolution of CoGen structures from exo‐ to endohedral. 相似文献
MgAgAs‐type “half‐Heusler” compounds are known to realize two out of three possible atomic arrangements of this structure type. The number of transition metal components typically determines which of the alternatives is favored. On the basis of DFT calculations for all three variants of 20 eight‐ and eighteen‐valence‐electron compounds, the experimentally observed structural variant was found to be determined by basically two different bonding patterns. They are quantified by employing two complementary position‐space bonding measures. The Madelung energy ${E_{\rm{M}}^{{\rm{QTAIM}}} }$ calculated with the QTAIM effective charges reflects contributions of the ionic interactions to the total energy. The sum of nearest‐neighbor delocalization indices ?nn characterizes the covalent interactions through electron sharing. With the aid of these quantities, the energetic sequence of the three atomic arrangements for each compound is rationalized. The resulting systematic is used to predict a scenario in which an untypical atomic arrangement becomes most favorable. 相似文献
Quantum-chemical calculations were carried out to shed more light upon possible first intermediates formed during chemical vapour deposition (CVD) processes leading to III-V semiconductors. Information about possible structures of intermediates and about thermodynamic properties in dependence of the temperature were collected. Because some of the systems calculated herein contain a substantial number of atoms (up to 144), it is limited to intermediates on the way to solid AIN. According to our suggestion, the first intermediates are species with the overall formula AINH2, Al2N2H4, Al3N3H6, AI5N5H8, AI7N7H, and Al9N9H, AI12N12H12. In further calculations the growth of a second layer, on top of the first layer, which is modelled by the Al12N12H12 cluster, is simulated. The Al12N12H12 "surface" offers two places for the attachment of an Al3N3H6 ring. At temperatures of 1000 K, the deltaG value for this attachment is only slightly negative, which suggests that the molecules can move relatively freely on the surface. This might be of importance for a defect-free growth process. Up to four layers are built on top of the first Al12N12H12 layer leading to Al24N24H24 (two layers), Al36N36H36 (three layers) and Al48N48H48 (four layers). The structures are compared with that of solid AIN in its most stable Wurzit-type structure. 相似文献
Germanene is a novel 2D material with promising optoelectronic properties, tuning of which is to be explored. This work demonstrates that doping and increasing the sheet size can alter optical and electronic properties of germanene via perturbation of the band structure. This feature has also been observed in other nanostructures, notably, silicon nanostructures, and may be attributed to quantum confinement effects. Our main findings on H‐terminated germanene are, (i) band gap can be reduced by 30%, (ii) exciton binding energy can be reduced by 60%, and (iii) absorption spectra can be tuned from UV to visible range. We employ time‐dependent density functional theory to investigate the role of dopants, boron (B), phosphorus (P), carbon (C), silicon (Si), and zirconium (Zr). Width of the germanene sheet is varied from 0.78 nm to 2.78 nm. Frequency and energy calculations are carried out to analyze the infrared (IR) and ultra‐violet (UV)‐visible (VIS) spectra. 相似文献
The new barium nitridoosmate oxide (Ba6O)(OsN3)2 was prepared by reacting elemental barium and osmium (3:1) in nitrogen at 815–830 °C. The crystal structure of (Ba6O)(OsN3)2 as determined by laboratory powder X‐ray diffraction ( , No 148: a=b=8.112(1) Å, c=17.390(1) Å, V=991.0(1) Å3, Z=3), consists of sheets of trigonal OsN3 units and trigonal‐antiprismatic Ba6O groups, and is structurally related to the “313 nitrides” AE3MN3 (AE=Ca, Sr, Ba, M=V–Co, Ga). Density functional calculations, using a hybrid functional, likewise indicate the existence of oxygen in the Ba6 polyhedra. The oxidation state 4+ of osmium is confirmed, both by the calculations and by XPS measurements. The bonding properties of the OsN35? units are analyzed and compared to the Raman spectrum. The compound is paramagnetic from room temperature down to T=10 K. Between room temperature and 100 K it obeys the Curie–Weiss law (μ=1.68 μB). (Ba6O)(OsN3)2 is semiconducting with a good electronic conductivity at room temperature (8.74×10?2 Ω?1 cm?1). Below 142 K the temperature dependence of the conductivity resembles that of a variable‐range hopping mechanism. 相似文献
Molecular semiconductors in the guise of three diazine‐functionalized oligothiophenes have been synthesized and their structural, optical, vibrational, electrochemical, and semiconductor properties studied. In their Full Paper on page 5023 ff. , J. T. López Navarrete, A. Facchetti, T. J. Marks et al. describe how these diazine‐functionalized oligothiophenes are reasonably efficient hole transporters.
Bridgehead imine‐substituted cyclopentadithiophene structural units, in combination with highly electronegative acceptors that exhibit progressively delocalized π‐systems, afford donor–acceptor (DA) conjugated polymers with broad absorption profiles that span technologically relevant wavelength (λ) ranges from 0.7 < λ < 3.2 μm. A joint theoretical and experimental study demonstrates that the presence of the cross‐conjugated substituent at the donor bridgehead position results in the capability to fine‐tune structural and electronic properties so as to achieve very narrow optical bandgaps (Egopt < 0.5 eV). This strategy affords modular DA copolymers with broad‐ and long‐wavelength light absorption in the infrared and materials with some of the narrowest bandgaps reported to date.
New transportation : New thiophene‐based semiconductors have been produced and studied by electrochemistry, various spectroscopic methods, and structural and morphological techniques in conjunction with model chemistry. Their electrical properties have been analyzed by implementation in field‐effect transistor devices (see figure).