NiFe/Pt薄膜中角度相关的逆自旋霍尔效应

NiFe/Pt双层薄膜样品在铁磁共振时, NiFe磁矩进动所产生的自旋流注入到Pt层中, 由于逆自旋霍尔效应产生直流电压V_ISHE, 此电压会叠加到NiFe薄膜由于自旋整流效应而产生的电压V_SRE 上, 实验测量所得电压为V_ISHE和V_SRE的叠加. 为了区分这两种不同机理对电压的贡献, 本文采取旋转外加静磁场的方法, 通过分析所测电压随磁场角度的变化从而分离出V_ISHE 的大小. 研究结果表明, 相比于单层NiFe(20 nm)薄膜样品, NiFe(20 nm)/Pt(10 nm)双层膜样品中由于NiFe自旋注入到Pt 中导致铁磁共振线宽增加. 与逆自旋霍尔效应产生的电压相比, 自旋整流效应的贡献较小, 但不可忽略. 本文工作有助于认清铁磁/非磁性金属材料中的自旋相关效应, 并提供了一种准确的分析逆自旋霍尔效应的方法.     

The origin of spin current in YIG/nonmagnetic metal multilayers at ferromagnetic resonance

Spin pumping in yttrium-iron-garnet(YIG)/nonmagnetic-metal(NM) layer systems under ferromagnetic resonance(FMR) conditions is a popular method of generating spin current in the NM layer.A good understanding of the spin current source is essential in extracting spin Hall angle of the NM and in potential spintronics applications.It is widely believed that spin current is pumped from precessing YIG magnetization into NM layer.Here,by combining microwave absorption and DC-voltage measurements on thin YIG/Pt and YIG/NM_1/NM_2(NM_1 =Cu or Al,NM_2 =Pt or Ta),we unambiguously showed that spin current in NM,instead of from the precessing YIG magnetization,came from the magnetized NM surface(in contact with thin YIG),either due to the magnetic proximity effect(MPE) or from the inevitable diffused Fe ions from YIG to NM.This conclusion is reached through analyzing the FMR microwave absorption peaks with the DC-voltage peak from the inverse spin Hall effect(ISHE).The voltage signal is attributed to the magnetized NM surface,hardly observed in the conventional FMR experiments,and was greatly amplified when the electrical detection circuit was switched on.     

Spin-Seebeck effects in Ni81Fe19/Pt films

The spin-Seebeck effect (SSE) converts a heat current into a spin current, a flow of spin angular momentum, and spin voltage, the driving force for nonequilibrium spin currents, in a ferromagnetic metal. In this study, the SSE in a ferromagnetic Ni₈₁Fe₁₉ film has been investigated by means of the inverse spin-Hall effect (ISHE) in a Pt film at room temperature. The experimental results measured in the Ni₈₁Fe₁₉/Pt system show that the sign of the thermally induced spin voltage is reversed between the higher- and lower-temperature ends of the Ni₈₁Fe₁₉ film. The ISHE in the Pt film allows us to detect the SSE signal with high sensitivity and to separate it from extrinsic thermoelectric effects.     

掺铌SrTiO_3中的逆自旋霍尔效应

采用磁控溅射法在未掺杂和掺杂的SrTiO_3基片上沉积了NiFe薄膜,通过翻转测试法分离出掺杂样品中的自旋整流电压和逆自旋霍尔电压.研究结果表明:在未掺杂的SrTiO_3基片中,翻转前后测试的电压曲线基本一致,为NiFe薄膜自旋整流效应产生的电压.对于掺Nb浓度x为0.028, 0.05, 0.1, 0.15, 0.2的SrTiO_3基片,分离出的逆自旋霍尔电压随掺杂浓度增加而减小,在掺杂浓度为0.15和0.2的样品中没有探测到明显的逆自旋霍尔电压.本文的结果表明,在SrTiO_3中掺入强自旋轨道耦合的杂质,通过掺杂浓度可以实现对SrTiO_3中逆自旋霍尔效应的调控,这类可调控的自旋相关研究为自旋电子器件的研究和开发提供了更多的可能性,具有很大的潜在应用价值.     

Inverse spin Hall effect in ITO/YIG exited by spin pumping and spin Seebeck experiments

Spin currents, which are excited in indium tin oxide(ITO)/yttrium iron garnet(YIG) by the methods of spin pumping and spin Seebeck effect, are investigated through the inverse spin Hall effect(ISHE). It is demonstrated that the ISHE voltage can be generated in ITO by spin pumping under both in-plane and out-of-plane magnetization configurations.Moreover, it is observed that the enhancement of spin Hall angle and interfacial spin mixing conductance can be achieved by an appropriate annealing process. However, the ISHE voltage is hardly seen in the presence of a longitudinal temperature gradient. The absence of the longitudinal spin Seebeck effect can be ascribed to the almost equal thermal conductivity of ITO and YIG and specific interface structure, or to the large negative temperature dependent spin mixing conductance.     

Angular and NiFe thickness dependence of exchange bias in IrMn/NiFe/IrMn thin film

Exchange biased IrMn/NiFe/IrMn thin films were studied as a function of NiFe thickness. In plane angular dependence of a resonance field distribution which is measured by FMR was analyzed as a combined effect of an unidirectional anisotropy and an uniaxial anisotropy. The unidirectional anisotropic field and the uniaxial anisotropic field were linearly varied with NiFe thickness while the films with a thicker NiFe layer do not follow the linear variation. Resonance field and linewidth variations were also analysed with NiFe thickness.     

The study of exchange coupling in NiFe/Cu/IrMn trilayer structures by MOKE and FMR measurements

The exchange coupling strength of NiFe/Cu/IrMn trilayer films was examined with both a new magneto optical Kerr effect (MOKE) method developed for the exchange coupling field determination and ferromagnetic resonance (FMR) measurements. We found that the value for exchange coupling field obtained by the MOKE technique coincided with FMR result with high accuracy. Other peculiarities of FMR measurements due to interlayer exchange coupling such as angular dependence of resonance field on Cu spacer thickness are also shown in the article.     

铁磁共振实验中值得注意的几个问题

与顺磁样品相比铁磁样品的磁共振信号不仅是强得多,铁磁样品的许多特点都会在铁磁共振(FMR)谱中反映出来.诸如,起始磁化过程的FMR谱线与有剩余磁化强度Mr的FMR谱是不同的,起始磁化过程中的巴克豪森跳跃也会在FMR谱中反映出来.样品的磁晶各向异性、形状各向异性,铁磁高温顺磁的磁性相变等等都能用FMR方法加以研究.     

Temperature dependence of spin pumping in YIG/NiOx/W multilayer

We report the temperature dependence of the spin pumping effect for Y₃Fe₅O₁₂ (YIG, 0.9 μm)/NiO (t_NiO)/W (6 nm) (t_NiO = 0 nm, 1 nm, 2 nm, and 10 nm) heterostructures. All samples exhibit a strong temperature-dependent inverse spin Hall effect (ISHE) signal I_c and sensitivity to the NiO layer thickness. We observe a dramatic decrease of I_c with inserting thin NiO layer between YIG and W layers indicating that the inserting of NiO layer significantly suppresses the spin transport from YIG to W. In contrast to the noticeable enhancement in YIG/NiO (t_NiO ≈ 1-2 nm)/Pt, the suppression of spin transport may be closely related to the specific interface-dependent spin scattering, spin memory loss, and spin conductance at the NiO/W interface. Besides, the I_c of YIG/NiO/W exhibits a maximum near the T_N of the AF NiO layer because the spins are transported dominantly by incoherent thermal magnons.     

Spin-torque ferromagnetic resonance induced by the spin Hall effect

We demonstrate that the spin Hall effect in a thin film with strong spin-orbit scattering can excite magnetic precession in an adjacent ferromagnetic film. The flow of alternating current through a Pt/NiFe bilayer generates an oscillating transverse spin current in the Pt, and the resultant transfer of spin angular momentum to the NiFe induces ferromagnetic resonance dynamics. The Oersted field from the current also generates a ferromagnetic resonance signal but with a different symmetry. The ratio of these two signals allows a quantitative determination of the spin current and the spin Hall angle.     

纳米FeAl合金的磁共振谱分析

在与晶粒组元相当的包裹纳米FeAl晶粒的无序界面或/和表面组元中,存在Fe-Al-Fe电子的超交换作用或/和Fe-Fe交换作用,使多晶FeAl合金因晶粒纳米化出现非磁性—磁性转变.X波段(频率为9.48GHz)的电子自旋共振(ESR)实验表明多晶FeAl合金没有磁共振信号.纳米晶样品的铁磁共振(FMR)信号是一个线宽ΔH_pp为8×10⁴A/m以上的宽峰.还观测到纳米晶体样品中Fe²⁺离子的ESR精细结构双峰,两峰间隔为1.316×10关键词：     

Localized spin-wave resonance modes of ferromagnetic microstrips in the field of a magnetic probe

Some results of the micromagnetic modeling of forced magnetization oscillations in planar microstrips of NiFe with easy plane anisotropy and Co/Pt with perpendicular easy axis anisotropy in the field of a magnetic spherical probe are considered. It has been shown that the probe field provokes the appearance of a hedgehog–antivortex coupling state in the NiFe strips, due to its lateral components and a skyrmion magnetization state in the Co/Pt layer. These effects destroy spatial magnetization oscillations in the microstrips and lead to the appearance of additional resonances in the spectrum of oscillations corresponding to the modes localized in the probe field.     

Fe/[NiFe/Cu]30多层膜线列阵的铁磁共振研究

用铁磁共振(FMR)技术研究Fe/［NiFe/Cu］₃₀多层膜线列阵的特性,线列阵采用激光全息光刻和离子束刻蚀技术加工,线密度为250线/mm和500线/mm.线列阵样品的FMR谱在稍高于主峰（声学峰）的共振场下有光学峰出现,相当层间交换耦合为反铁磁型.光学峰与声学峰的峰位间距沿易轴小于沿难轴.又,来自非磁Cu夹层的顺磁共振峰的幅度远大于原始的连续膜,说明线列阵加工致使层结构退化. 关键词：     

Temperature dependence of ferromagnetic resonance in permalloy/NiO exchange-biased films

The temperature dependencies of the ferromagnetic resonance (FMR) linewidth and the resonance field-shift have been investigated for NiO/NiFe exchange-biased bilayers from 78 K to 450 K. A broad maximum in the linewidth of 500 Oe, solely due to the exchange-bias, is observed at ≈150 K when the magnetic field is applied along the film plane. When the magnetic field is applied perpendicular to the film plane, the maximum in the linewidth is less pronounced and amounts to 100 Oe at the same temperature. Such a behavior of the FMR linewidth is accompanied with a monotonic increase in the negative resonance field-shift with decreasing temperature. Our results are compared with the previous experimental FMR and Brillouin light scattering data for various ferromagnetic/antiferromagnetic (FM/AF) structures, and suggest that spin dynamics (spin-wave damping and anomalous resonance field-shift) in the FM/AF structures can be described in a consistent way by a single mechanism of the so-called slow-relaxation.     

铁磁异质结构中的超快自旋流调制实现相干太赫兹辐射

利用飞秒激光脉冲在生长于二氧化硅衬底上的W/CoFeB/Pt和Ta/CoFeB/Pt两类铁磁/非磁性金属异质结构中实现高效、宽带的相干THz脉冲辐射.实验中, THz脉冲的相位随外加磁场的反转而反转,表明THz辐射与样品的磁有序密切相关.为了考察三层膜结构THz辐射的物理机制,分别研究了构成三层膜结构的双层异质结构(包括CoFeB/W, CoFeB/Pt和CoFeB/Ta)的THz辐射.实验结果都与逆自旋霍尔效应相符合, W/CoFeB/Pt和Ta/CoFeB/Pt三层膜结构所辐射的THz强度优于同等激发功率下的ZnTe (厚度0.5 mm)晶体.此外,还研究了两款异质结构和ZnTe的THz辐射强度与激发光脉冲能量密度的关系,发现Ta/CoFeB/Pt的饱和能量密度略大于W/CoFeB/Pt的饱和能量密度,表明自旋电子在Ta/CoFeB/Pt中的界面积累效应相对较小.     

“Positive” and “negative” electric-pulse-induced reversible resistance switching effect in Pr<Subscript>0.7</Subscript>Ca<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> films

“Negative” electric-pulse-induced reversible resistance (EPIR) switching phenomenon was found in In/PCMO/Pt sandwich, in which the high resistance can be written with positive voltage pulses, and the low resistance can be reset using negative voltage pulses (the positive voltage direction is defined as going from the top electrode to the bottom electrode). This is just the opposite from the “positive” EPIR effect in Ag/PCMO/Pt sandwich, in which the high resistance can be written only with negative voltage pulses, and the low resistance can be reset using positive voltage pulses. The I–V hysteresis curves of In/PCMO/Pt and Ag/PCMO/Pt sandwiches also show opposite directions, i.e., counterclockwise and clockwise under a negative voltage region for indium and Ag electrode systems, respectively. C–V characteristics show that the barrier does not exist in Ag/PCMO/Pt sandwich, while In/PCMO/Pt sandwich exhibits an obvious Schottky-like barrier. We suggest that in the negative EPIR behavior in In/PCMO/Pt structure, the resistance states are mainly controlled changing the Schottky-like barrier at the interface with the weak effect of carrier trapping process, while the positive EPIR behavior in Ag/PCMO/Pt sandwich mainly depends on the carrier trapping process at the interface. PACS 72.80.-r; 73.40.-C; 75.70.-i     

Characterization of heat-assisted magnetic probe recording on CoNi/Pt multilayers

A method of heat-assisted magnetic recording (HAMR) potentially suitable for probe-based storage systems is characterized. In this work, field emission current from a scanning tunneling microscope (STM) tip is used as the heating source. Pulse voltages of 2–7 V were applied to a CoNi/Pt multilayered film fabricated on either bare silicon or oxidized silicon substrates. Different types of Ir/Pt and W STM tips were used in the experiment. The results show that thermally recorded magnetic marks are formed with a nearly uniform mark size of 170 nm on the film fabricated on bare silicon substrate when the pulse voltage is above a threshold voltage. The mark size becomes 260 nm when they are written on the identical film fabricated on an oxidized silicon substrate. The threshold voltage depends on the material work function of the tip, with W having a threshold voltage about 1 V lower than Pt. A synthesized model, which contains the calculation of the emission current, the simulation of heat transfer during heating, and the study of magnetic domain formation, was introduced to explain experimental results. The simulation agrees well with the experiments.     

Bi对自旋阀钉扎场的影响及机理

实验发现将Bi插入自旋阀多层膜TaNiFeCuBi(x)NiFeFeMn中可以显著地提高自旋阀的钉扎场Hex.采用XPS对Cu,Bi元素的分布情况进行了研究,发现Bi的插入明显抑制了Cu原子在自旋阀的制备过程中在NiFeFeMn界面的偏聚.进一步研究表明:自旋阀钉扎层NiFeFeMn界面中,Cu原子的存在是导致自旋阀Hex小于TaNiFeFeMn多层膜Hex的主要原因. 关键词： 自旋阀 钉扎场 交换各向异性 表面活化剂     

Pt插层对铁磁/反铁磁界面交换耦合的影响

在铁磁层(FM)/反铁磁层(FeMn)耦合体系中插入Pt 插层或对靠近FM/FeMn界面处的FeMn掺杂Pt元素,研究了体系的交换偏置场 H_ex及矫顽力H_c随Pt插层深度 d_Pt与Pt掺杂层厚度t_PtFeMn的变化关系. 实验结果表明,引入Pt插层后NiFe/FeMn(d_Pt)/Pt/FeMn体系的未补偿磁矩(UCS)的数量得到很大的提高,从而对H_ex与H_c 起到增强的作用; 同时, 从实验结果可以推测FeMn层内部UCS的分布深度约为1.3 nm. 另外,对靠近FM/FeMn界面处的FeMn掺杂Pt元素,发现掺入Pt元素后体系的H_ex 得到有效增强, 这是因为掺入Pt元素后体系UCS的数量也得到很大的提高.     

Suppression of interlayer segregation in spin-valve NiFe/Cu/NiFe/FeMn multilayers

Experimental results show that Cu atoms can float out to or segregate to the NiFe/FeMn interface for Ta/NiFe/Cu/NiFe/FeMn/Ta spin-valve multilayers, which results in a drop of the exchange-coupling field (H_ex) of NiFe/FeMn in the spin-valve multilayers. However, when a small amount of Bi atoms is deposited between the Cu and the pinned NiFe layers, Cu segregation to the NiFe/FeMn interface can be suppressed. At the same time, H_ex of NiFe/FeMn in the spin-valve multilayers with a Bi interfacial layer can be effectively increased. PACS 75.70.Cn; 82.80.Pv