Hydrothermal synthesis of MoS2 nanowires

The MoS₂ nanowires with diameters of 4 nm and lengths of 50 nm were synthesized by a hydrothermal method using 0.36 g MoO₃ and 1.8 g Na₂S as precursors in 0.4 mol/l HCl solution at 260°C. The products are characterized by XRD, XPS, TEM, HTEM and BET. Results show that the as-prepared MoS₂ nanowires consist of 1–10 sulfide layers with BET surface areas of 107 m²/g. The possible reaction route and the formation mechanism of the MoS₂ nanowires are discussed. The effects of exterior conditions such as pH value, temperature, concentration of precursors and additives on the particle size and morphology of MoS₂ crystallites were investigated.     

Growth and spectral properties of Nd-doped Sr3Y(BO3)3 crystal

A new crystal of Nd³⁺:Sr₃Y(BO₃)₃ with dimension up to 25×35 mm² was grown by Czochralski method. Absorption and emission spectra of Nd³⁺: Sr₃Y(BO₃)₃ were investigated . The absorption band at 807 nm has a FWHM of 18 nm. The absorption and emission cross sections are 2.17×10⁻²⁰ cm² at 807 nm and 1.88×10⁻¹⁹ cm² at 1060 nm, respectively. The luminescence lifetime τ_f is 73 μs at room temperature     

Growth and properties of (Pb0.90La0.10)TiO3 thick films prepared by RF magnetron sputtering with a PbO buffer layer

The (Pb_0.90La_0.10)TiO₃ [PLT] thick films (3.0 μm) with a PbO buffer layer were deposited on the Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by RF magnetron sputtering method. The PLT thick films comprise five periodicities, the layer thicknesses of (Pb_0.90La_0.10)TiO₃ and PbO in one periodicity are fixed. The PbO buffer layer improves the phase purity and electrical properties of the PLT thick films. The microstructure and electrical properties of the PLT thick films with a PbO buffer layer were studied. The PLT thick films with a PbO buffer layer possess good electrical properties with the remnant polarization (P_r=2.40 μC cm⁻²), coercive field (E_c=18.2 kV cm⁻¹), dielectric constant (ε_r=139) and dielectric loss (tan δ=0.0206) at 1 kHz, and pyroelectric coefficient (9.20×10⁻⁹ C cm⁻² K⁻¹). The result shows the PLT thick film with a PbO buffer layer is a good candidate for pyroelectric detector.     

Study of electrical properties of MoO3–Fe2O3–P2O5 and SrO–Fe2O3–P2O5 glasses by impedance spectroscopy. II

The electrical and dielectric properties for three series of MoO₃–Fe₂O₃–P₂O₅ and one series of SrO–Fe₂O₃–P₂O₅ glasses were measured by impedance spectroscopy in the frequency range from 0.01 Hz to 3 MHz and over the temperature range from 303 to 473 K. It was shown in Part I that the MoO₃ is incorporated into phosphate network and the structure/properties are strongly influenced by the overall O/P ratio. The Fe₂O₃ content and Fe(II)/Fe_tot ratio in these glasses have significant effects on the electrical conductivity and dielectric permittivity. With decreasing Fe₂O₃ content in MoO₃–Fe₂O₃–P₂O₅ glasses with O/P at 3.5 the dc conductivity, σ_dc(ω) decreases for two orders of magnitude, which indicates that the conductivity for these glasses depends on Fe₂O₃ and is independent of the MoO₃ content. Also, the dielectric properties such as ^′(ω), ^″(ω) and σ_ac(ω) and their variation with frequency and temperature indicates a decrease in relaxation intensity with increase in the concentration of MoO₃. On the other hand, the dc conductivity for MoO₃–Fe₂O₃–P₂O₅ glasses with O/P > 3.5 increases with the substitution of MoO₃ which has been explained by an increase in the number of non-bridging oxygens and formation of Fe–O–P bonds that are responsible for formation of small polarons. The increase in the dielectric permittivity, ^′(ω) with increasing MoO₃ content is attributed to the increase in the deformation of glass network with increasing bonding defects. For SrO–Fe₂O₃–P₂O₅ glasses the conductivity and dielectric permittivity remained constant with increasing SrO.     

Electronic conduction in vitreous semiconductors in the pseudo-binary system (As2S3)1-x(PbS)x

AC conductivity and dielectric relaxation measurements of the bulk amorphous compositions in the pseudo-binary system (As₂S₃)_1-x(PbS)_x (x = 0, 0.1, 0.4 and 0.5) in the frequency range 500 Hz-10 kHz and in the temperature span 180–450 K are reported. The temperature dependence of the ac conductivity, σ_ac(ω), has a broad structure at all frequencies in compositions with x = 0.1, 0.4 and 0.5 whose peak position is not thermally activated. A similar structure was also observed in the data on the dielectric constant, ε₁, which peaked at a frequency of 1 kHz in the composition with x = 0.5. Analysis of the results using the correlated barrier hopping model revealed that the electronic conduction takes place by single polaron and bipolaron hopping processes at high and low temperatures, respectively, in compositions containing Pb. The microstructure and phase-separation in the glasses containing Pb influence the electrical transport and dielectric dispersion. This study has revealed the possible presence of a phase transformation at around 300 K at a frequency of 1 kHz in the dielectric dispersion behaviour of composition with x = 0.5.     

Structure and properties of the pure and Pr-doped Ge25Ga5Se70 and Ge30Ga5Se65 glasses

The Ge₂₅Ga₅Se₇₀ and Ge₃₀Ga₅Se₆₅ pure and Pr³⁺-doped glasses were prepared by direct synthesis from elements and PrCl₃. It was found that up to 1 mol% PrCl₃ can be introduced in the Ge₂₅Ga₅Se₇₀ and Ge₃₀Ga₅Se₆₅ glasses. Both types of glasses with overstoichiometric and substoichiometric content of Se were homogeneous and of black color. The optical energy gap is E^opt_g=2.10 eV, and the glass transition temperature is T_g=543 K for Ge₂₅Ga₅Se₇₀ and T_g=633 K for Ge₃₀Ga₅Se₆₅. The long-wavelength absorption edge is near 14 μm and it corresponds to multiphonon processes. Doping by Pr³⁺ ions creates absorption bands in transmission spectra, which can be assigned to the electron transitions from the ground ³H₄ level to the higher energy levels of Pr³⁺ ions ³H₅, ³H₆, ³F₂, ³F₃ and ³F₄, respectively. By excitation with YAG:Nd laser line (1064 nm), two intense luminescence bands (1343 and 1601 nm) were excited. The first band can be ascribed to electron transitions between ¹G₄ and ³H₅ energy levels of Pr³⁺ ions. Full width at half of maximum (FWHM) of the intensity of luminescence was found to be 70 nm for (Ge₂₅Ga₅Se₇₀)_1 − x(PrCl₃)_x and (Ge₃₀Ga₅Se₆₅)_1 − x(PrCl₃)_x glasses. The FWHM in selenide glasses is lower than in halide and sulphide glasses. The second luminescence band (1601 nm) can be probably ascribed to the transitions between ³F₃ and ³H₄ energy levels of Pr³⁺ ions. The absorption and luminescence spectra of Pr³⁺ ions in studied glasses are slightly influenced by stoichiometry of glassy matrix. The Raman spectra of studied glasses were deconvoluted and assignment of Raman bands to individual vibration modes of basic structural units was suggested. The structure of studied glasses is mainly formed by corner-sharing and edge-sharing GeSe₄ tetrahedra. The vibration modes of Ga-containing structural units were not found, they are apparently overlapping with Ge-containing structural units due to small difference between atomic weights of Ge and Ga. In the glasses with substoichiometry of Se, the Ge–Ge bonds of Ge₂Se₆ structural units were found. In Se-rich glasses the Se–Se vibration modes were found. In all studied glasses also ‘wrong' bonds between like atoms were found in small amounts. Maximum phonon energy of studied glasses is 320 cm⁻¹.     

Infrared study of SiO2 sol to gel evolution and gel aging

The evolution of the gelation of silica gel was studied by means of Fourier transform infrared spectroscopy. The gel was prepared by hydrolysis and polycondensation of tetraethyl orthosilicate in the presence of water with HCl, and with formamide (DCCA) in methanol either added or not. For both systems the gelation process was followed by the time evolution of the ν-Si---O(H) and ν-Si---O(Si) absorption bands. In the systems which used formamide, the ν-Si---O(H) peak shifts from ≈ν = 950 cm⁻¹ for τ = 0 to ≈ν = 968 cm⁻¹ (t = t_gel) and tends to shifts to 975 cm⁻¹ over a long period of time (t = 100t_gel), and a slow rate evolution between 0.1 and 0.4 t_gel is observed. In the absence of formamide the same evolution is observed without the slow rate plateau. For ν-Si-O(Si) absorption bands, the band near 1075 cm⁻¹ remains practically unchanged in both systems during the experiment time, but the second absorption band at 1133 cm⁻¹ is split into two bands each having its own specific evolution, depending on composition and temperature.     

Cation site occupation by Ag/Na ion-exchange in R2O–Al2O3–SiO2 glasses

Ag⁺/Na⁺ ion-exchanged R₂O–Al₂O₃–SiO₂ glasses with uniform concentration profile of Ag⁺ and Na⁺ were prepared by heat treatment in molten silver salt followed by holding at the same temperature in an ambient atmosphere. Their glass transition temperature (T_g) and thermal expansion coefficient (TEC) were measured and structures were investigated using ²⁹Si-MAS NMR, ²⁷Al-MAS NMR, IR and Raman spectroscopies. Both T_g and TEC decreased with increase of the exchange ratio, but T_g was still above the ion-exchange temperature of 400°C even for the fully exchanged sample. The ²⁹Si- and ²⁷Al-MAS NMR spectra were mostly unchanged and no sign of the structural alteration of the glass network was observed. On the other hand, the vibrational spectra showed remarkable peak shifts depending on the exchange ratio. From these structural results, it was found that when the exchange ratio was low, the introduced Ag⁺ ions were stabilized at the non-bridging oxygen (NBO) site, and then Na⁺ ions in AlØ₄ site were exchanged by Ag⁺ ions after full replacement of NBO sites, where Ø represents the bridging oxygen.     

Viscosity and IR investigations in the Li2O---B2O3 system

The high viscosity in melts of the Li₂O---B₂O₃ system makes it very difficult to grow large crystals of lithium triborate. The viscosity and IR characteristics of molten li₂O---B₂O₃ system are reported in this paper. When the temperature increases the viscosity of li₂O---B₂O₃ system decreases and follows an Arrhenius-type relationship. With an increasing 13203 ratio in Li₂O---B₂O₃ melts, the viscosity rises gradually to a maximum with a composition Li₂O: 3.513203 then it falls rapidly. In order to find active agents to reduce the viscosity, Na₂O, NaCl, LiF, P205, M003, W03 etc oxides were added to Li₂O---B₂O₃ samples respectively and investigated using the orthogonal method. The experimental results show that the addition of acidic oxides can significantly decrease the viscosity in the Li₂O---B₂O₃ system. For Li₂O: 4.513203, an ideal additive agent is 20wt% Li₂O:: 2MoO₃. Near the composition for crystal growth, the percentage reduction of viscosity is 62.2%. The IR spectra of Li₂O---B₂O₃ system revealed that the BO₄⁻/NO₃⁻ ratio is reduced in the melt using Li₂O: 2MoO₃ as an additive. It is proposed that the M003 reduced the concentration of bridging oxygen atoms of BO₄⁻. The change of structure explains the decline in the viscosity. In the crystal structures of lithium triborate, the matrix spaces are so small that larger other cations than Li+ are very difficult to enter the crystal matrix. So the use of additive agents to reduce the viscosity is a possible method if no new phase appears.     

New solvents for the growth of substituted BaFe12O19 single crystals from high-temperature solutions

The solubility of a series of hexaferrite derivatives of BaFe₁₂O₁₉ in solvents of the system Na₂O-B₂O₃ with oxide ratios of 7:3 and 3:2 has been investigated. The temperature dependences of the saturation concentration in these solvents are determined for ferrites with the nominal compositions Ba_0.8Pb_0.2Fe₁₂O₁₉, BaFe₁₀Ga₂O₁₉, BaFe₁₀Al₂O₁₉ and BaFe₈Mn₂ Ti₂O₁₉. Single crystals of BaFe₁₂O₁₉, in which part of the metal ions are replaced by various amounts of Pb²⁺, Ga³⁺, Al³⁺ and Mn²⁺ + Ti⁴⁺ ions, are g rown from the solutions by the slow cooling technique. The distribution coefficients of the substituting ions and the compositions of the crystals obtained are established by microprobe analysis (EPMA). Information on the position of substitution is obtained from the Mössbauer spectra.     

Vapor phase epitaxy of pure VO2 and V1−xCrxO2

The vapor phase epitaxy of thin epilayers of VO₂ and V_1−xCrxO₂ on TiO₂ transparent substrates is described. Chemical vapor deposition occurs by reacting a (VOCL₃/CrO₂Cl₂/H₂O/H₂) mixture at about 800°C using argon as a carrier gas. The preparation of pure VO₂ requires special care to make it homogeneously stoichiometric and to obtain steep concentration profiles at the TiO₂/VO₂ interface. Layers were obtained which had electrical and optical properties comparable to the best bulk crystals grown by other techniques. Homogeneous solid solutions of V_1−xCr_xO₂ epilayers were also grown for the first time in the range o < x < 0.17. Chromium concentration and homogeneity were determined by electron microprobe analysis. The separation coefficient k was also found to vary with x. It is close to unity below x = 0.001 and above this value Cr is incorporated more easily. High quality heteroepitaxial layers (1 cm² area, 1 to 30 μm thickness) of V_1−xCr_xO₂ have for the first time allowed the measurement of the optical absorption coefficient.     

A comparison of the medium-range order in glassy GeS2 and Sb2S3

In amorphous (a-) GeS₂ there is only one medium-range order (MRO) dependent X-ray scattering feature, i.e., the ‘first sharp diffraction peak’ (FSDP), whereas in a-Sb₂S₃ all scattering features in the interval 1–2.4 Å⁻¹ are in fact MRO-dependent. The basic element of MRO in a-GeS₂ is a part of a chain of corner bound tetrahedra extracted from the high temperature form of c-GeS₂; in a-Sb₂S₃ it is a part of a crystalline-like (Sb₂S₃)_n band. Ordering of parts of these bands is characterized by a greater interband separation than in the crystal. By contrast with a-GeS₂, the MRO-dependent medium-angle scattering features in a-Sb₂S₃ are less sensitive to fluctuations of the interband (intercluster) ordering distance.     

The effect of mixed alkaline earths on the diffusivity and the incorporation of iron in 5Na2O · xMgO · (15−x)CaO · yAl2O3 · (80−y)SiO2 melts

Diffusion coefficients of iron were measured in glass melts with the basic compositions 5Na₂O · xMgO · (15−x)CaO · yAl₂O₃ · (80−y)SiO₂ with x=5, 10 and y=0, 5, 7.5, 10 and 15. The melts were doped with 0.25 mol% Fe₂O₃ and studied in the temperature range from 1000 to 1600 °C using square-wave voltammetry. The voltammograms exhibited distinct peaks attributed to the reduction of Fe³⁺ to Fe²⁺, from which peak currents mixed diffusion coefficients of iron were calculated. Diffusion coefficients in all melt compositions which did not show crystallization could be fitted to Arrhenius equation. The diffusivities measured in different melt compositions were related to the same viscosity, i.e. not the same temperature. Increasing the alumina concentration from 5 to 10 mol% resulted in an increase of the viscosity corrected diffusivities. At further increasing alumina concentrations, the diffusivities get smaller again. This can be explained by the stabilizing effect of Na⁺ and Ca²⁺ on FeO⁻₄ and AlO⁻₄-tetrahedra, which strengthens the incorporation of Fe³⁺ into the glass structure.     

Synthesis, structure and ferroelectric property of a new niobate: Sr6CrNb9O30

A new niobate Sr₆CrNb₉O₃₀ was found in the ternary system SrO---Cr₂O₃---Nb₂O₅. The transparent crystal which has a green color and a need-like shape can be grown by the flux method. The crystal structure was determined by x-ray diffraction analysis and dielectric measurement, and it belongs to the orthorhombic tungsten bronze structure at room temperature with space group Cmm2, and unit cell parameters A=1.7505(4) nm, B=1.7510(1) nm, C=7.768(4)nm, Z=4. Dielectric constant measurement show that Sr₆CrNb₉O₃₀ has two phase transitions, paraelectric to ferroelectric at 110°C and ferroelectric to ferroelastic at 205°C.     

Preparation and characterization of Ni-incorporated FeS2 single crystals

Nickel-incorporated FeS₂ single crystals with various Ni compositions of Fe_0.99S₂:Ni_0.01, Fe_0.98S₂:Ni_0.02, Fe_0.96S₂:Ni_0.04, and Fe_0.9S₂:Ni_0.1 were grown by chemical vapor transport (CVT) method using ICl₃ as a transport agent. Physical properties of the Ni-incorporated FeS₂ single crystals were characterized using X-ray diffraction, Raman spectroscopy, electrical conductivity, and photoconductivity (PC) measurements. By means of the analyses of the X-ray diffraction patterns, the whole series of Ni-doped FeS₂ single crystals were determined to be single-phase and isostructural. Raman spectroscopy of the Ni-doped FeS₂ crystals was carried out at room temperature. Raman resonant peaks of the Ni-doped FeS₂ crystals demonstrate an energy red-shift behavior with respect to the increase of the dopant densities. Conductivity measurements show the resistivity of the Ni-doped FeS₂ decreased as the doping concentration of Ni is increased. Nickel is an n-type dopant, which behaves like a donor level existed near the conduction band edge of the synthetic FeS₂. On the other hand, dopant effect of nickel on the synthetic FeS₂ also destroys the photoconductive sensitivity in the photoconductivity measurements.     

Magnesium-doped InGaAs using (C2H5C5H4)2Mg: application to InP-based HBTs

Heavily magnesium-doped p-type-InGaAs layers on InP(100) substrates were successfully grown, for the first time, by low-pressure metalorganic chemical vapor deposition (MOCVD) using bis-ethylcyclopentadienyl-magnesium, (C₂H₅C₅H₄)₂Mg (EtCp₂Mg), as organometallic precursor for the Mg. It was experimentally verified that the room-temperature hole concentration of Mg into InGaAs increased with increase of the V/III ratio and decrease of the growth temperature. A maximum hole concentration of over 4 × 10¹⁹ cm⁻³ was obtained. The diffusion coefficient of Mg in InGaAs was experimentally derived to be 10⁻¹² cm²/s at 800°C, which was comparable to that of Be. Finally, InP/InGaAs heterojunction bipolar transistors (HBTs) with Mg-doped bases were fabricated successfully. Measured maximum current gain was about 320 with a 90 nm thick base and a sheet resistance of the base layer of 1.28 kΩ/sq.     

Flux growth of PbMg1/3Ta2/3O3 single crystals

Single crystals of PbMg_1/3Ta_2/3O₃ (PMT) were grown by the flux method. The PbO–Pb₃O₄–B₂O₃ system was used as a solvent. Transparent and light yellow PMT single crystals of rectangular shape and dimensions up to 10×6×4 mm³ were obtained. For the applied growth conditions only, the crystals of the perovskite structure were grown. X-ray diffraction tests showed that at room temperature PMT exhibits cubic symmetry with lattice parameter a=4.042(1) Å. Dielectric studies pointed to relaxor properties of PMT. The characteristic broad and frequency-dependent maximum of dielectric permittivity was observed at 179.7 K (1 kHz).     

Study on phase diagram of Bi2O3---SiO2 system for Bridgman growth of Bi4Si3O12 single crystal

Phase relation of Bi₂O₃---SiO₂ system was evaluated experimentally from DTA and XRD measurements and its stable and metastable phase diagrams were proposed. Although BSO melts near-congruently at 1025°C in the stable phase equilibrium, its melt crystallizes to form metastable phase Bi₂SiO₅ in accordance with the metastable phase diagram while cooling. Therefore, BSO couldn't nucleate and crystallize spontaneously without crystal seed and only Bi₂SiO₅ crystallized at about 850°C with significant supercooling during Bridgman growth. BSO single crystal with 20×20×100mm³ was grown in a vertical Bridgman furnace with a BSO seed according to its phase diagram. The measuring results of scintillation properties of BSO specimen show that its decay constant is 91 ns (about 1/3 of BGO) and light output is 23% of BGO.     

Growth and spectral properties of Nd:LaVO4 crystal

This paper reports the growth and spectral properties of 3.5 at% Nd³⁺:LaVO₄ crystal with diameter of 20×15 mm² which has been grown by the Czochralski method. The spectral parameters were calculated based on Judd–Ofelt theory. The intensity parameters Ω_λ are: Ω₂=2.102×10⁻²⁰ cm², Ω₄=3.871×10⁻²⁰ cm², Ω₆=3.235×10⁻²⁰ cm². The radiative lifetime τ_r is 209 μs and calculated fluorescence branch ratios are: β₁(0.88μm)=45.2, β₂(1.06μm)=46.7, β₃(1.34μm)=8.1. The measured fluorescence lifetime τ_f is 137 μm and the quantum efficiency η is 65.6%. The absorption band at 808 nm wavelength has an FWHM of 20 nm. The absorption and emission cross sections are 3×10⁻²⁰ and 6.13×10⁻²⁰ cm², respectively.     

Sub-Tg mechanical relaxation of a La55Al25Ni20 amorphous alloy

Dynamic mechanical properties of an amorphous La₅₅Al₂₅Ni₂₀ alloy were measured by a forced oscillation method in the temperature range from room temperature to 453 K, just below the glass transition temperature (T_g = 481 K). The internal friction at a constant frequency 62.8 rad/s of this alloy showed a peak at about 400 K and the peak position shifts with frequency. Structural relaxation reduces the magnitude of the relaxation peak but has little affect on the peak position. Using the time-temperature superposition process, master curves for storage E′ (ln ω) and loss E″ (ln ω) moduli are constructed. Activation energy of the relaxation obtained from shift factors is low, 100 kJ/mol, which is close to that for diffusion of the Al in Al and Ni in Al. The relaxation spectra are very broad with a half width of 2 3 decades.