理想波导短程透镜的研究

报道无曲率奇点，无像差光波导短程透镜的研究。在透镜面型设计上，应用前文提出的过渡区母线函数形式，有效地消除了透镜卷边两端的曲率奇点，具体设计和研制了理想光波导短程透镜。     

低偏振高功率1 310 nm超辐射发光二极管的液相外延生长

对新月形超辐射发光二极管的液相外延生长过程进行了机理分析。利用Matlab软件对建立的非平面生长模型进行了理论计算,并利用扫描电镜(SEM)对液相外延生长的形貌进行了分析,通过理论计算与实验分析设计了获得低偏振、高功率超辐射发光二极管的外延结构。利用该结构研制的超辐射发光二极管芯片在100 mA工作电流、25 ℃工作温度下输出功率达到3.6 mW,相应的输出波长为1 306 nm, 光谱半宽为39 nm,光谱波纹为0.17 dB,偏振度为2%。     

超辐射发光二极管抗反射膜的设计

分析了设计超辐射发光二极管抗反射膜的光导纳法,介绍了有效折射率的概念。选用TiO2和SiO2两种材料给出了中心波长为850 nm时的设计实例。结果表明设计时要考虑有效折射率,才能获得好的性能。     

大功率短波长InAlGaAs/AlGaAs量子点超辐射发光管

为了满足超辐射发光管的短波长应用,采用InAlGaAs/AlGaAs量子点有源区和干法刻蚀工艺制备了短波长弯曲波导超辐射发光管。在1.6A脉冲电流注入下,器件峰值输出功率为29mW,中心波长为880nm,光谱半高宽为20.3nm。比较了干法刻蚀工艺和湿法腐蚀工艺对超辐射发光管器件性能的影响。在1.6A脉冲电流注入下,湿法腐蚀制备的器件峰值输出功率仅为7mW。与湿法腐蚀相比,干法刻蚀可以精确控制波导形状和参数,降低波导损耗,有效增大器件输出功率。     

多量子阱超辐射发光二极管(SLD)热分布计算

对由8个量子阱所组成的条形超辐射发光二极管(Super luminescent diode,SLD)进行了热分析,计算了不同器件结构下的热阻和温度分布。计算结果表明,热阻变化受芯片宽度和长度的影响较大,可以达到两个数量级;当注入功率达到1W时,有源区的温度将接近50K。该分析对有效地设计芯片的结构,减少温度升高对SLD稳定性的影响具有指导意义。     

半导体超辐射发光管自发发射因子的估算

自发发射因子β是半导体光电器件的重要参数,在以往对超辐射发光管的特性分析,特别是应用速率方程对超辐射器件的光强进行估算时,多沿用与超辐射发光器件相应结构激光器的β因子,由于两者的光输出特性不同,这种沿用不仅会造成β因子物理意义上的混乱,而且也给超辐射器件光电特性的分析带来了较大的误差。对超辐射发光管的自发发射因子β进行了讨论,提出了平均自发发射因子的概念,并对增益导引及折射率导引的β因子进行了估算     

激光二极管泵浦的高重复频率Nd：YAG激光器

报道两个１．５Ｗ连续激光二极管端面泵浦的声光调ＱＮｄ：ＹＡＧ激光器，输出激光脉冲的最高重复频率为３０ｋＨｚ重复频率１ｋＨｚ时，最窄脉宽为１２ｎｓ，最高峰值功率为１２．１ｋＷ。     

大功率半导体激光器远场特性研究

由于半导体激光器输出光束的不对称性,使得它在许多应用过程中必须采用特殊的光学系统进行光束整形。在设计光学系统的光学元件及进行光学耦合时需要了解激光器的远场特性。通过用量子阱激光器的解理面上的边界条件解亥姆霍兹方程,获得关于远场强度分布、光束散角,并用计算机给出各种理论曲线及数据。用自行设计制作的测试装置测量,获得激光器的远场分布曲线给出了测试数据。计算机给出的理论远场分布曲线与实验测试获得的远场分布曲线完全一致。     

半导体激光器的噪声特性神经网络仿真

通过求解含朗之万噪声项的速率方程, 给出了噪声特性解析表达式, 建立了半导体激光器噪声特性神经网络模型. 利用该模型对噪声进行了计算机仿真, 取得了与数值计算相一致的结果. 训练好的神经网络模型具有精度高、速度快等优点.     

Sinusoidal Phase-Modulating Superluminescent Diode Interferometer with Fabry-Perot Etalone for Step-Profile Measurement

In this paper we use a superluminescent diode (SLD) as the light source of an interferometer and extract a narrow spectrum from a wide spectrum of the SLD with a Fabry-Perot Etalone (FPE). By varying sinusoidally the distance between the two mirrors of FPE, the central wavelength of the narrow spectrum is scanned sinusoidally. The distance between the mirrors is exactly set by a feedback control system, and sinusoidal phase-modulated SLD light that has a large scanning width of about 10 nm can be obtained with high stability and spatial uniformity. The phase of the interference signal has two different components. One is amplitude Z_b of sinusoidal phase modulation, which is proportional to the optical path difference (OPD) and the scanning width. The other is conventional phase α, which provides a fractional value of the OPD in the range of the wavelength. By combining the two values of the OPD obtained from Z_b and α, an exact OPD larger than the wavelength can be measure with ment accuracy in α. Characteristics of the interferometer are made clearly through step-profile measurements.     

High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide

The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 μm broad-area laser diodes has been measured, and is 2.5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1.7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19% fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates.     

High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide

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MOVPE Growth and Fabrication of 1.3μm High Power InGaAsP-InP Polarization-Insensitive Superluminescent Diodes with Complex Strained Quantum Wells

High power polarization-insensitive InGaAsP-InP multiple quantum well (MQW) superluminescent diodes (SLD's) emitting at 1.3μm were investigated. A combination of tensile strained and compressively strained quantum wells called complex strained MQW were used in a single active layer in order to obtain polarization insensitivity. Low-pressure metalorganic chemical vapor phase epitaxy was used for crystal growth. High resolution X-ray diffraction and photoluminescence spectra showed excellent crystal quality. The SLD's were fabricated to ridge waveguide structure with 7° tilted cavity, the two facets were coated with two layers anti-reflection TiO₂/SiO₂ films, residual facet reflectivity was found to be less than 0.04%. The SLD's exhibited a up to 18.8 mW optical output power and less than 1 dB polarization dependence of output power with a less than 0.5 dB optical spectra modulation at 250 mA.     

Characteristics of Gain-Guided Laser Diodes with Cylindrical-Mirror Cavity

We have developed highly reliable etched-mirror laser diodes using a dry etching method. The lasers without facet-coating have been operating stably over 2500 h under automatic-power control (APC) at a power of 3 mW/facet at 50°C. The gain-guided laser diodes with a cylindrical-mirror cavity (CMC) have coaxial mirrors and a fan-shaped stripe structure. By decreasing the curvature radius of the inner facet or increasing the stripe width of the inner facet, the beam waist parallel to the junction plane can be moved outside of the laser diode, while the beam waist perpendicular to the junction plane stops at the mirror facet. A particular CMC laser has a low astigmatism of 4.1 μm and a low relative intensity of noise (RIN) less than –134 dB/Hz at 4 mW under 0–1% optical feedback without high frequency current superposition.     

850nm高亮度近衍射极限锥形半导体激光器

制备了具有低红暴优势的850 nm大功率高亮度锥形半导体激光器,获得了近衍射极限的激光输出.当连续输功率为200 mW时,光束质量因子M2仅为1.7,亮度高达16.3 MW·cm-2·sr-1;当功率提高到1W时,M2因子和亮度仍分别达到2.8和9.9 MW·cm-2· sr-1.此外,研究了锥形激光器的功率、光谱、远...     

连续激光二极管端面抽运Nd:YAG激光器噪声研究

以连续激光二极管端面抽运NdYAG激光器为实验模型,研究了该激光器中输出激光强度噪声、频率噪声和场分布噪声的特性,并根据实验数据推算出NdYAG晶体的粒子上能级寿命随温度变化为1.83μsK,发射截面随温度变化为-0.146×10-19cm2K。     

降低端面泵浦DPL热噪声的补偿法

通过对端面泵浦DPL谐振腔结构参数的分析，发现选择适当谐振腔参数可降低输出光的热噪声。提出引入一个起钝化作用的补偿镜，以减小热不稳定性对振荡光的影响，实验证明这种方法切实可行。     

半导体激光放大器的电路模型及噪声特性分析

给出了半导体激光（ＬＤ）放大器的电路模型，使得对半导体激光放大器的特性可以用通用电路分析软件进行分析。用该模型对谐振型光放大器光功率输出特性与失谐关系进行了模拟分析，模型的分析结果与已报道的理论和实验基本一致；用该模型还对谐振光放大器的噪声进行了分析。     

GaAlAs/GaAs非均匀阱宽多量子阱超辐射发光管材料制备及表征

超辐射发光二极管(SLD)具有不同于半导体激光器和普通发光二极管的优异性能。为了制备高功率半导体超辐射发光管,并且得到比较大的光谱宽度、大的单程增益和抑制电流饱和,我们研究设计了具有850nm辐射波长的GaAlAs/GaAs非均匀阱宽多量子阱超辐射发光二极管结构,采用分子束外延(MBE)方法进行了材料制备。同时利用X射线双晶衍射,变温(10～300K)光致发光(PL)等方法检测分析了外延薄膜的结构和光电特性。在光致发光谱线中我们得到了发射波长850nm的谱峰,谱峰范围跨跃800～880nm,双晶回摆曲线结果显示了设计的结构得到实现。在注入电流140mA时,器件输出光谱的半峰全宽可以达到26nm,室温下连续输出功率达到6mW。