Synthesis, crystal structure, and physical properties of the type-I clathrate Ba(8-δ)Ni(x)□(y)Si(46-x-y)

Type-I clathrate phase Ba(8)Ni(x)□(y)Si(46-x-y) (□ = vacancy) was obtained from the elements at 1000 °C with the homogeneity range 2.4 ≤ x ≤ 3.8 and 0 ≤ y ≤ 0.9. In addition, samples with low Ni content (x = 1.4 and 1.6; y = 0) and small Ba deficiency were prepared from the melt by steel-quenching. Compositions were established by microprobe analysis and crystal structure determination. Ba(8-δ)Ni(x)□(y)Si(46-x-y) crystallizes in the space group Pm ?3n (No. 223) with lattice parameter ranging from a = 10.3088(1) ? for Ba(7.9(1))Ni(1.4(1))Si(44.6(1)) to a = 10.2896(1) ? for Ba(8.00(3))Ni(3.82(4))Si(41.33(6)). Single-crystal X-ray diffraction data together with microprobe analysis indicate an increasing number of framework vacancies toward compositions with higher Ni content. For all compositions investigated, Ni K-edge X-ray absorption spectroscopy measurements showed an electronic state close to that of elemental Ni. All samples exhibit metallic-like behavior with moderate thermopower and low thermal conductivity in the temperature range 300-773 K. Samples with compositions Ba(7.9(1))Ni(1.4(1))Si(44.6(1)) and Ba(7.9(1))Ni(1.6(1))Si(44.4(1)) are superconducting with T(c) values of 6.0 and 5.5 K, respectively.     

Synthesis of the clathrate-I phase Ba(8-x)Si46 via redox reactions

The clathrate-I phase Ba(8-x)Si(46) (space group Pm3?n) was synthesized by oxidation of Ba(4)Li(2)Si(6) with gaseous HCl. Microcrystalline powders of the clathrate phase were obtained within a few minutes. The reaction temperature and the pressure of HCl were optimized to achieve good-quality crystalline products with a composition range of 1.3 < x < 1.9. The new preparation route presented here provides an alternative to the high-pressure synthesis applied so far.     

Phase range of the type-I clathrate Sr8Al(x)Si(46-x) and crystal structure of Sr8Al10Si36

Samples of the type-I clathrate Sr(8)Al(x)Si(46-x) have been prepared by direct reaction of the elements. The type-I clathrate structure (cubic space group Pm3n) which has an Al-Si framework with Sr(2+) guest atoms forms with a narrow composition range of 9.54(6) ≤ x ≤ 10.30(8). Single crystals with composition A(8)Al(10)Si(36) (A = Sr, Ba) have been synthesized. Differential scanning calorimetry (DSC) measurements provide evidence for a peritectic reaction and melting point at ～1268 and ～1421 K for Sr(8)Al(10)Si(36) and Ba(8)Al(10)Si(36), respectively. Comparison of the structures reveals a strong correlation between the 24k-24k framework sites distances and the size of the guest cation. Electronic structure calculation and bonding analysis were carried out for the ordered models with the compositions A(8)Al(6)Si(40) (6c site occupied completely by Al) and A(8)Al(16)Si(30) (16i site occupied completely with Al). Analysis of the distribution of the electron localizability indicator (ELI) confirms that the Si-Si bonds are covalent, the Al-Si bonds are polar covalent, and the guest and the framework bonds are ionic in nature. The Sr(8)Al(6)Si(40) phase has a very small band gap that is closed upon additional Al, as observed in Sr(8)Al(16)Si(30). An explanation for the absence of a semiconducting "Sr(8)Al(16)Si(30)" phase is suggested in light of these findings.     

Structure and white luminescence of Eu-activated (Ba,Sr)(13-x)Al(22-2x)Si(10+2x)O66 materials

The optical properties of Eu-activated (Ba,Sr)(13-x)Al(22-2x)Si(10+2x)O66 materials have been determined after the structural reinvestigation of the hypothetical Ba 13Al 22Si 10O 66 material on the basis of the Gebert's model. The white fluorescence and phosphorescence of the (Ba,Sr)(13-x)Al(22-2x)Si(10+2x)O66:Eu series result from the existence of two broad emission bands associated with (8)H-4f(6)5d(1)-->(8)S-4f(7) transitions peaking at 534 and 438 nm, the intensities of which may be tuned at room temperature via the control of the europium concentration and the substitution of Sr for Ba. This suggests the possibility to adjust the emission of the material to white LED requisites.     

Phase evolution, phase transition, raman spectra, infrared spectra, and microwave dielectric properties of low temperature firing (K(0.5x)Bi(1-0.5x))(Mo(x)V(1-x))O4 ceramics with scheelite related structure

In the present work, the (K(0.5x)Bi(1-0.5x))(Mo(x)V(1-x))O(4) ceramics (0≤x ≤ 1.00) were prepared via the solid state reaction method and sintered at temperatures below 830 °C. At room temperature, the BiVO(4) scheelite monoclinic solid solution was formed in ceramic samples with x < 0.10. When x lies between 0.1-0.19, a BiVO(4) scheelite tetragonal phase was formed. The phase transition from scheelite monoclinic to scheelite tetragonal phase is a continuous, second order ferroelastic transition. High temperature X-ray diffraction results showed that this phase transition can also be induced at high temperatures about 62 °C for x = 0.09 sample, and has a monoclinic phase at room temperature. Two scheelite tetragonal phases, one being a BiVO(4) type and the other phase is a (K,Bi)(1/2)MoO(4) type, coexist in the compositional range 0.19 < x < 0.82. A pure (K,Bi)(1/2)MoO(4) tetragonal type solid solution can be obtained in the range 0.82 ≤ x ≤ 0.85. Between 0.88 ≤ x ≤ 1.0, a (K,Bi)(1/2)MoO(4) monoclinic solid solution region was observed. Excellent microwave dielectric performance with a relative dielectric permittivity around 78 and Qf value above 7800 GHz were achieved in ceramic samples near the ferroelastic phase boundary (at x = 0.09 and 0.10).     

Phase relations and crystal structures in the system Ta-V-Ge

Phase equilibria have been derived for the isothermal section of the Ta-V-Ge system at 1500 °C (for concentrations <45 at% Ge) on the basis of X-ray powder diffraction, EPMA and TEM analyses of argon arc melted alloys annealed in high vacuum at 1500 °C up to 200 hours. Four ternary phases have been identified within the isothermal section, out of which three were characterized by Rietveld refinement of X-ray powder diffraction data. τ(1)-(Ta(1-x)V(x))(5)Ge(3) (0.21 ≤ x ≤ 0.63) adopts the Mn(5)Si(3)-type and τ(2)-Ta(Ta(x)V(1-x-y)Ge(y))(2), x = 0.02, y = 0.12 was found to be a MgZn(2)-type Laves phase. Detailed transmission electron microscopy (TEM) in several crystallographic directions confirmed lattice parameters and crystal symmetry of this phase and rejected the presence of any superstructure. τ(3)-Ta(9-x+y)V(4+x-y-z)Ge(1+z), x = 0.32, y = 0.51, z = 0.98 crystallizes with the Nb(9)Co(4)Ge-type, whereas the structure of τ(4) is not yet known. Although a MgCu(2)-type cubic Laves phase is not present in the Ta-V binary at this temperature, additions of Ge stabilize this phase in the ternary system: C15-Ta(Ta(x)V(1-x-y)Ge(y))(2), x = 0.04, y = 0.05. V(11)Ge(8) (Cr(11)Ge(8) type) shows a large solubility up to (Ta(x)V(1-x))(11)Ge(8), x = 0.64 at 1500 °C.     

Synthesis, thermal and spectral characterization of nanosized Ni(x)Mg(1-x)Al2O4 powders as new ceramic pigments via combustion route using 3-methylpyrozole-5-one as fuel

New Ni(x)Mg(1-x)Al(2)O(4) nanosized in different composition (0.1≤x≤0.8) powders have been synthesized successively for first time by using low temperature combustion reaction (LTCR) of corresponding metal chlorides, carbonates and nitrates as salts with 3-methylpyrozole-5-one (3MP5O) as fuel at 300°C in open air furnace. Magnesium aluminate spinel (MgAl(2)O(4)) was used as crystalline host network for the synthesis of nickel-based nano ceramic pigments. The structure of prepared samples was characterized by using different techniques such as thermal analysis (TG-DTG/DTA), X-ray powder diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and transmission electron microscopy (TEM). UV/Visible and Diffuse reflectance spectroscopy (DRS) using CIE-L*a*b* parameters methods have been used for color measurements. The obtained results reveal that Ni(x)Mg(1-x)Al(2)O(4) powder of samples is formed in the single crystalline and pure phase with average particle size of 6.35-33.11 nm in the temperature range 500-1200°C. The density, particle size, shape and color are determined for all prepared samples with different calcination time and temperature.     

Origin of Thermal Degradation of Sr(2-x)Si(5)N(8):Eu(x) Phosphors in Air for Light-Emitting Diodes

The orange-red emitting phosphors based on M(2)Si(5)N(8):Eu (M = Sr, Ba) are widely utilized in white light-emitting diodes (WLEDs) because of their improvement of the color rendering index (CRI), which is brilliant for warm white light emission. Nitride-based phosphors are adopted in high-performance applications because of their excellent thermal and chemical stabilities. A series of nitridosilicate phosphor compounds, M(2-x)Si(5)N(8):Eu(x) (M = Sr, Ba), were prepared by solid-state reaction. The thermal degradation in air was only observed in Sr(2-x)Si(5)N(8):Eu(x) with x = 0.10, but it did not appear in Sr(2-x)Si(5)N(8):Eu(x) with x = 0.02 and Ba analogue with x = 0.10. This is an unprecedented investigation to study this phenomenon in the stable nitrides. The crystal structural variation upon heating treatment of these compounds was carried out using the in situ XRD measurements. The valence of Eu ions in these compounds was determined by electron spectroscopy for chemical analysis (ESCA) and X-ray absorption near-edge structure (XANES) spectroscopy. The morphology of these materials was examined by transmission electron microscopy (TEM). Combining all results, it is concluded that the origin of the thermal degradation in Sr(2-x)Si(5)N(8):Eu(x) with x = 0.10 is due to the formation of an amorphous layer on the surface of the nitride phosphor grain during oxidative heating treatment, which results in the oxidation of Eu ions from divalent to trivalent. This study provides a new perspective for the impact of the degradation problem as a consequence of heating processes in luminescent materials.     

Cubic aluminum silicides RE8Ru12Al49Si9(Al(x)Si12-x) (RE = Pr, Sm) from liquid aluminum. Empty (Si,Al)12 cuboctahedral clusters and assignment of the Al/Si distribution with neutron diffraction.

Two new quaternary aluminum silicides, RE8Ru12Al49Si9(Al(x)Si12-x) (x approximately 4; RE = Pr, Sm), have been synthesized from Sm (or Sm2O3), Pr, Ru, and Si in molten aluminum between 800 and 1000 degrees C in sealed fused silica tubes. Both compounds form black shiny crystals that are stable in air and NaOH. The Nd analog is also stable. The compounds crystallize in a new structural type. The structure, determined by single-crystal X-ray diffraction, is cubic, space group Pm3m with Z = 1, and has lattice parameters of a = 11.510(1) A for Sm8Ru12Al49Si9(Al(x)Si12-x) and a = 11.553(2) A for Pr8Ru12Al49Si9(Al(x)Si12-x) (x approximately 4). The structure consists of octahedral units of AlSi6, at the cell center, Si2Ru4Al8 clusters, at each face center, SiAl8 cubes, at the middle of the cell edges, and unique (Al,Si)12 cuboctohedral clusters, at the cell corners. These different structural units are connected to each other either by shared atoms, Al-Al bonds, or Al-Ru bonds. The rare earth metal atoms fill the space between various structural units. The Al/Si distribution was verified by single-crystal neutron diffraction studies conducted on Pr8Ru12Al49Si9(Al(x)Si12-x). Sm8Ru12Al49Si9(Al(x)Si12-x) and Pr8Ru12Al49Si9(Al(x)Si12-x) show ferromagnetic ordering at Tc approximately 10 and approximately 20 K, respectively. A charge of 3+ can be assigned to the rare earth atoms while the Ru atoms are diamagnetic.     

New barium copper chalcogenides synthesized using two different chalcogen atoms: Ba2Cu(6-x)STe4 and Ba2Cu(6-x)Se(y)Te(5-y)

Ba(2)Cu(6-x)STe(4) and Ba(2)Cu(6-x)Se(y)Te(5-y) were prepared from the elements in stoichiometric ratios at 1123 K, followed by slow cooling. These chalcogenides are isostructural, adopting the space group Pbam (Z = 2), with lattice dimensions of a = 9.6560(6) ?, b = 14.0533(9) ?, c = 4.3524(3) ?, and V = 590.61(7) ?(3) in the case of Ba(2)Cu(5.53(3))STe(4). A significant phase width was observed in the case of Ba(2)Cu(6-x)Se(y)Te(5-y) with at least 0.17(3) ≤ x ≤ 0.57(4) and 0.48(1) ≤ y ≤ 1.92(4). The presence of either S or Se in addition to Te appears to be required for the formation of these materials. In the structure of Ba(2)Cu(6-x)STe(4), Cu-Te chains running along the c axis are interconnected via bridging S atoms to infinite layers parallel to the a,c plane. These layers alternate with the Ba atoms along the b axis. All Cu sites exhibit deficiencies of up to 26%. Depending on y in Ba(2)Cu(6-x)Se(y)Te(5-y), the bridging atom is either a Se atom or a Se/Te mixture when y ≤ 1, and the Te atoms of the Cu-Te chains are partially replaced by Se when y > 1. All atoms are in their most common oxidation states: Ba(2+), Cu(+), S(2-), Se(2-), and Te(2-). Without Cu deficiencies, these chalcogenides were computed to be small gap semiconductors; the Cu deficiencies lead to p-doped semiconducting properties, as experimentally observed on selected samples.     

Enhanced high-temperature thermoelectric performance of Yb(14-x)Ca(x)MnSb11

The high temperature p-type thermoelectric material Yb(14)MnSb(11) has been of increasing research interest since its high temperature thermoelectric properties were first measured in 2006. Subsequent substitutions of Zn, Al, and La into the structure have shown that this material can be further optimized by altering the carrier concentration or by reduction of spin-disorder scattering. Here the properties of the Yb(14-x)Ca(x)MnSb(11) solid solution series where isovalent Ca(2+) is substituted for Yb(2+) will be presented. Crystals of the Yb(14-x)Ca(x)MnSb(11) solid solution series were made by Sn-flux (x = 2, 4, 6, 8) with the following ratio of elements: (14-x)Yb: xCa: 6 Mn: 11Sb: 86Sn, and their structures determined by single crystal X-ray diffraction. The density of the material significantly decreases by over 2 g/cm(3) as more Ca is added (from x = 1 to 8), because of the lighter mass of Ca. The resulting lower density is beneficial from a device manufacturing perspective where there is often a trade-off with the specific power per kilogram. The compounds crystallize in the Ca(14)AlSb(11) structure type. The Ca substitution contributes to systematic lengthening the Mn-Sb bond while shortening the Sb-Sb bond in the 3 atom linear unit with increasing amounts of Ca. Temperature dependent thermoelectric properties, Seebeck, electrical resistivity, and thermal conductivity were measured from room temperature to 1273 K. Substitution of Yb with Ca improves the Seebeck coefficient while decreasing the thermal conductivity, along with decreasing the carrier concentration in this p-type material resulting in an enhanced thermoelectric figure of merit, zT, compared to Yb(14)MnSb(11).     

Hydrothermal growth and structural studies of Si(1-x)Ge(x)O2 single crystals

The substitution of germanium in the α-quartz structure is a method investigated to improve the piezoelectric properties and the thermal stability of α-quartz. Growth of α-quartz type Si(1-x)Ge(x)O(2) single crystals was performed using a temperature gradient hydrothermal method under different experimental conditions (pressure, temperature, nature of the solvent, and the nutrient). To avoid the difference of dissolution kinetics between pure SiO(2) and pure GeO(2), single phases Si(1-x)Ge(x)O(2) solid solutions were prepared and used as nutrients. The influence of the nature (cristobalite-type, glass) and the composition of this nutrient were also studied. Single crystals were grown in aqueous NaOH (0.2-1 M) solutions and in pure water. A wide range of pressures (95-280 MPa) and temperatures (315-505 °C) was investigated. Structures of single crystals with x = 0.07, 0.1, and 0.13 were refined, and it was shown that the structural distortion (i.e., θ and δ) increases with the atomic fraction of Ge in an almost linear way. Thus, the piezoelectric properties of Si(1-x)Ge(x)O(2) solid solution should increase with x, and this material could be a good candidate for technological applications requiring a high piezoelectric coupling factor or high thermal stability.     

Neutron diffraction study of the type I clathrate Ba8Al(x)Si(46-x): site occupancies, cage volumes, and the interaction between the guest and the host framework

Samples with the type I clathrate structure and composition Ba(8)Al(x)Si(46-x), where x = 8, 10, 12, 14, and 15, were examined by neutron powder diffraction at 35 K. The clathrate type I structure contains Ba cations as guests in a framework derived from tetrahedrally coordinated Al/Si atoms. The framework is made up of five- and six-membered rings that form dodecahedral and tetrakaidecahedral cages. The change in distances between tetrahedral sites across the series is used to develop a model for the mixed Al/Si occupancy observed in the framework. The calculated volumes of the cages that contain the Ba atoms display a linear increase with increasing Al composition. In the smaller dodecahedral cages, the Ba atomic displacement parameter is symmetry constrained to be isotropic for all compositions. In the larger tetrakaidecahedral cages, the anisotropic atomic displacement of the Ba atom depends upon the composition: the displacement is perpendicular (x = 8) and parallel (x = 15) to the six-membered ring. This difference in direction of the displacement parameter is attributed to interaction with the Al in the framework and not to the size of the cage volume as x increases from 8 to 15. The influence of the site occupation of Al in the framework on displacement of the cation at the 6d site is demonstrated.     

Epitaxial thin films of ATiO(3-x)H(x) (A = Ba, Sr, Ca) with metallic conductivity

Epitaxial thin films of titanium perovskite oxyhydride ATiO(3-x)H(x) (A = Ba, Sr, Ca) were prepared by CaH(2) reduction of epitaxial ATiO(3) thin films deposited on a (LaAlO(3))(0.3)(SrAl(0.5)Ta(0.5)O(3))(0.7) substrate. Secondary ion mass spectroscopy detected a substantial amount and uniform distribution of hydride within the film. SrTiO(3)/LSAT thin film hydridized at 530 °C for 1 day had hydride concentration of 4.0 × 10(21) atoms/cm(3) (i.e., SrTiO(2.75)H(0.25)). The electric resistivity of all the ATiO(3-x)H(x) films exhibited metallic (positive) temperature dependence, as opposed to negative as in BaTiO(3-x)H(x) powder, revealing that ATiO(3-x)H(x) are intrinsically metallic, with high conductivity of 10(2)-10(4) S/cm. Treatment with D(2) gas results in hydride/deuteride exchange of the films; these films should be valuable in further studies on hydride diffusion kinetics. Combined with the materials' inherent high electronic conductivity, new mixed electron/hydride ion conductors may also be possible.     

Tunable electrical and magnetic properties of half-metallic Zn(x)Fe(3-x)O4 from first principles

The electrical and magnetic properties of Zn-doped Fe(3)O(4) at different doping concentrations of Zn have been investigated using a density functional method with generalized-gradient approximation corrected for on-site Coulombic interactions. The electronic structure calculation predicts that Zn(x)Fe(3-x)O(4) (0 ≤x≤ 0.875) is half-metallic with a full spin polarization. The hopping carrier concentration of Zn(x)Fe(3-x)O(4) decreases with increasing x, which indicates a distinct increase in the resistivity. The saturation magnetization of Zn(x)Fe(3-x)O(4) increases evidently with increasing x from x = 0 to x = 0.75 (i.e. from 4.0 to 8.3 μ(B)/f.u.) and then decreases rapidly to zero at x = 1. The robust half-metallicity, large tunability of electrical and magnetic properties of a Zn doped Fe(3)O(4) system make it a promising functional material for spintronic applications.     

CaMn(1-x)Nb(x)O3 (x < or = 0.08) perovskite-type phases as promising new high-temperature n-type thermoelectric materials

Perovskite-type CaMn(1-x)Nb(x)O(3+/-delta) (x = 0.02, 0.05, and 0.08) compounds were synthesized by applying both a "chimie douce" (SC) synthesis and a classical solid state reaction (SSR) method. The crystallographic parameters of the resulting phases were determined from X-ray, electron, and neutron diffraction data. The manganese oxidations states (Mn(4+)/Mn(3+)) were investigated by X-ray photoemission spectroscopy. The orthorhombic CaMn(1-x)Nb(x)O(3+/-delta) (x = 0.02, 0.05, and 0.08) phases were studied in terms of their high-temperature thermoelectric properties (Seebeck coefficient, electrical resistivity, and thermal conductivity). Differences in electrical transport and thermal properties can be correlated with different microstructures obtained by the two synthesis methods. In the high-temperature range, the electron-doped manganate phases exhibit large absolute Seebeck coefficient and low electrical resistivity values, resulting in a high power factor, PF (e.g., for x = 0.05, S(1000K) = -180 microV K(-1), rho(1000K) = 16.8 mohms cm, and PF > 1.90 x 10(-4) W m(-1) K(-2) for 450 K < T < 1070 K). Furthermore, lower thermal conductivity values are achieved for the SC-derived phases (kappa < 1 W m(-1) K(-1)) compared to the SSR compounds. High power factors combined with low thermal conductivity (leading to ZT values > 0.3) make these phases the best perovskitic candidates as n-type polycrystalline thermoelectric materials operating in air at high temperatures.     

Structural and spectroscopic properties of pure and doped Ba6Ti2Nb8O30 tungsten bronze

Pure and doped Ba(6)Ti(2)Nb(8)O(30) (BTN), obtained by substituting M = Cr, Mn, or Fe on the Ti site (Ba(6)Ti(2-x) M(x)Nb(8)O(30), x = 0.06 and 0.18) and Y and Fe on the Ba and Ti sites, respectively (Ba(6-x)Y(x)Ti(2-x)Fe(x)Nb(8)O(30), x= 0.18), are synthesized. The influence of cation doping on the local structure, the cation oxidation state, and the possible defect formation able to maintain the charge neutrality are investigated by spectroscopic (electron paramagnetic resonance (EPR) and micro-Raman), structural (X-ray powder diffraction) and transport (impedance spectroscopy, thermoelectric power) measurements, in the temperature range of 300-1200 K in air and N(2) flow. Starting from the valence state of the doping ions (Fe(3+), Cr(3+), and Mn(2+)), determined by EPR, and from thermoelectric power measurements, evidencing a negative charge transport, different charge-compensating defect equilibria, based on the creation of positive electron holes or oxygen vacancies and electrons, are discussed to interpret the conductivity results.     

Thermoelectric properties of Yb(x)Eu(1-x)Cd2Sb2

The thermoelectric performance of EuCd(2)Sb(2) and YbCd(2)Sb(2) was improved by mixed cation occupation. The composition, structure, and thermoelectric properties of Yb(x)Eu(1-x)Cd(2)Sb(2) (x=0, 0.5, 0.75, and 1) have been investigated. Polycrystalline samples are prepared by direct reaction of the elements. Thermoelectric properties were investigated after densification of the materials by spark plasma sintering. Yb(x)Eu(1-x)Cd(2)Sb(2) crystallizes in the P3m1 space group. The lattice parameters increase with the europium content. These materials show low electrical resistivity, high Seebeck coefficient, and low thermal conductivity together with high carrier concentration and high carrier mobility. ZT values of 0.88 and 0.97 are obtained for Yb(0.5)Eu(0.5)Cd(2)Sb(2) and Yb(0.75)Eu(0.25)Cd(2)Sb(2) at 650 K, respectively.     

Synthesis, structure, and high-temperature thermoelectric properties of boron-doped Ba8Al14Si31 clathrate I phases

Single crystals of boron-doped Ba8Al14Si31 clathrate I phase were prepared using Al flux growth. The structure and elemental composition of the samples were characterized by single-crystal and powder X-ray diffraction; elemental analysis; and multinuclear (27)Al, (11)B, and (29)Si solid-state NMR. The samples' compositions of Ba8B0.17Al14Si31, Ba8B0.19Al15Si31, and Ba8B0.32Al14Si31 were consistent with the framework-deficient clathrate I structure Ba8Al(x)Si(42-3/4x)cube(4-1/4x) (x = 14, cube = lattice defect). Solid-state NMR provides further evidence for boron doped into the framework structure. Temperature-dependent resistivity indicates metallic behavior, and the negative Seebeck coefficient indicates that transport processes are dominated by electrons. Thermal conductivity is low, but not significantly lower than that observed in the undoped Ba8Al14Si31 prepared in the same manner.     

LaCo(1-x)Ni(x)O(3) with Improved Electrical Conductivity

To determine the applicability of LaCo(1-x)Ni(x)O(3) in a conductive material for electrical wiring, the dependence of the electronic transport property on the Ni content is investigated via Hall effect measurements, Rietveld analyses, and band-structure calculations. Ni doping (50 mol %) into the Co sites realizes a high electrical conductivity of 1.9 × 10(3) S/cm, which is an unexpectedly high value for a LaCo(1-x)Ni(x)O(3) system, at room temperature due to the high carrier concentration of 2.2 × 10(22) cm(-3) and the small effective mass of 0.1 m(e). In addition, the high electrical conductivity is maintained from room temperature to 900 °C; that is, the temperature coefficient of the conductivity is smaller than that of standard metals. Thus, the results indicate that LaCo(0.5)Ni(0.5)O(3) is suitable as a conductive material for electrical wiring at high temperatures in air.