硅中Mo-B络合物的电荷分布

我们对硅中Mo-B络合物的电子态作了SW-Xα自洽计算.通过体系电荷分布分析,结合前文Pd-B络合物的结果,对已被广为接受的描写间隙位过渡金属杂质和替代位IIIA族受主杂质络合物的离子模型的正确性提出了怀疑.     

硅中Pd-B络合物性质的理论研究

本文报道硅中间隙位Pd和替位B络合物的Xα-SW自洽计算电子结构的结果.通过与硅中替位B的电子结构以及硅中间隙Pd的电子结构比较,我们发现间隙位Pd原子和替位B原子不形成杂质对能级,通常用来描写间隙位3d过渡金属和IIIA族浅受主杂质对的理论模型──离子模型,不适于处理硅中Pd-B络合物体系.     

本征无序硅的光学性质(英文)

We have studied the intrinsic disorder structure of a amorphous silicon surface layer formed by ultra high dose ion-implantation using Raman Spectroscopy and Ellipsometric Spectroscopy. The Raman spectrum shows that the blunt peak at about 480cm-1 becomes wider with the increase of dose while the peak 520cm-1 disappeared completely. We think after long range order has disappeared in the surface layer because of the high dose implantation, further higher dose implatation will cause the change of the short range order, which results mainly from the angle distortion of tetrahedral. With the increase of dose the angle distortion △θ, derived from the measurement of Raman HMW (half maximum width), is growing larger until it reaches the maximum △θmax. The shape of ε2(λ) spectrum and the optical energy gap have a close relationship with the angle distortion. The peak E2 at 4.25eV of the ε2(λ) spectrum disappeared whereas the peak E1 at 3.4eV related to bond direction of tetrahedral remain unchanged to some extent but becomes wider with the increase of dose just as the 480cm-1 Raman peak. A still higher dose of implantation will give rise to self-annealing phenomenon. Using the concept of "disorder saturation state", we have explained the experimental results successfully from the energy point of view.     

硅中浅杂质的高激发态(英文)

Photothermal ionization spectroscopy (PTIS) has revealed highly excited states of both shallow donors and acceptors in ultra-pure silicon. At least eight discrete lines associated with the highly exeited states that are higher than 6p, level of phosphorus donors have bsen observed in the photothermal ionization spectra of n-type ultra-pure silicon. For p-type ultra-pure silicon, up to 12 discrete lines and fine structures of the lines associated with the excited states of boron acceptors have also been observed. The assignment of the lines has been made and discussed according to the effective mass theory(EMT) of shallow impurities in silicon.     

中子辐照硅中少子寿命的衰退(英文)

Disordered regions(DR) produced by neutron irradiation are highly effective for the degradation of minority carrier lifetime in silicon. In this paper we analyze the properties of the DR in detail, calculate the occupancies of defect states and the bending height of the energy band by means of the effectively generalizing of Schokly-Read-Hall statistical recombination theory to the DR, and present the self-consistent formulas for calculating degradation of minority carrier lifetime in the region, including the influences of defect concentration, band bending height, quasi -Fermi level as well as excess carrier density on the minority carrier lifetime. Finally, we make a comparision between the calculation results from the disordered region model and the point defect model and experimental results with detailed discussions.     

硅中量子产额增益谱的计算(英文)

This paper presents theoretically calculated results of the quantum yield of silicon, which are in better agreement with experimental measurements than other published results. Considering the geometry of the interaction between the impact particle and the target particle on the base of classical view, we have developed a new expression for impact ionization. The distribution probability of carriers generated by photons has been given in this paper with fine results.     

结晶硅和硅小颗粒的动力学研究(英文)

<正> The ground-state structures and ground-state energies of small SiN(N = 2 - 7 ) clusters are investigated using the Stillinger-Weber potential. The stable geometries of SiN(N= 2 - 7 )clusters are studied.     

钴溅射在硅中引进的深能级(英文)

Co has already been shown to have promissing properties with respect to self-aligned silicide technology. In view of its importance, is is essential to understand the behaviour of Co in Si. The purpose of this work is to report a detailed study of the deep level behaviour of Co in Si. Deep levels in N-type and P-type, due to Co-sputtering and RTP(Rapid Thermal Processing) at various temperature, were investigated by using DLTS technique. It has been found that Co-related defect levels at (Ec-0.20eV), (Ec-0.34eV), (Ec-0.36eV), (Ec-0.41eV) and (Ec-0.45eV) are produced only for N-type material. The concentration of defects is rather small and ranges from 2×1010 to 1×1011 cm-3. These defect levels can be attributed to Co atoms or to Co in combination with RTP-step and Co-defect complexes.     

低温下硅的光伏效应(英文)

<正> We diffused gold into Si wafers of good quality (Ln≥324μm) and obtained 6 samples with NAa = 7.94×1012 -6.96×1015cm-3. The minority carrier lifetime of each sample was measured with the photovoltage method and compareed with the calculated value, showing that maximum deviation is 4 times between them.     

a-Sn膜的半导体性质(英文)

Amorphous Tin(a-Sn) film deposited by vacuum evaporation is reported and its properties are researched in this paper. X-ray diffraction for specimens prepared at lower rate of evaporation and substrate temperature demonstrates that the Sn film has amorphous structure. The temperature dependence of d.c. conductivity of the a-Sn film shows semiconductor properties the measurements of optical absorption made on each specimen, determine the optical gap. This paper interprets the experimental results in terms of theory of Anderson localization and the Mott amorphous semiconductor.     

P型硅纳米板压阻特性的理论研究

考虑量子尺寸效应与自旋轨道耦合作用,从含有应变的6×6 Luttinger-Kohn哈密顿量出发,采用有限差分方法建立了p型硅纳米板的能带结构模型.基于硅纳米板压阻特性与其能带结构的相关性,采用改进的压阻理论定量分析了厚度、杂质浓度与温度对其压阻系数的影响.研究结果表明:量子尺寸效应强烈改变了硅纳米板的能带结构,是其压阻系数增大的主要因素,而自旋轨道耦合作用仅对含较高应变的硅纳米板的能带结构有较大影响;硅纳米板的压阻系数具有尺寸效应,随厚度减小而增大,随杂质浓度增加或温度升高而减小.在高简并条件下,硅纳米板的压阻系数与温度无关,完全由杂质浓度的大小控制;在非简并条件下,情况刚好相反.最后,利用施加应力前后空穴等能面形状的变化定性分析了硅纳米板压阻特性的起源.     

P型硅纳米板压阻特性的理论研究

考虑量子尺寸效应与自旋轨道耦合作用,从含有应变的6×6 Luttinger-Kohn哈密顿量出发,采用有限差分方法建立了p型硅纳米板的能带结构模型.基于硅纳米板压阻特性与其能带结构的相关性,采用改进的压阻理论定量分析了厚度、杂质浓度与温度对其压阻系数的影响.研究结果表明:量子尺寸效应强烈改变了硅纳米板的能带结构,是其压阻系数增大的主要因素,而自旋轨道耦合作用仅对含较高应变的硅纳米板的能带结构有较大影响;硅纳米板的压阻系数具有尺寸效应,随厚度减小而增大,随杂质浓度增加或温度升高而减小.在高简并条件下,硅纳米板的压阻系数与温度无关,完全由杂质浓度的大小控制;在非简并条件下,情况刚好相反.最后,利用施加应力前后空穴等能面形状的变化定性分析了硅纳米板压阻特性的起源.     

Theoretical Study of Carrier Transport in Silicon Nanowire Transistors Based on the Multisubband Boltzmann Transport Equation

We study electronic transport in silicon nanowire transistors at room temperature based on the self-consistent numerical solution of the multisubband Boltzmann transport equation and Poisson equation. The SchrÖdinger equation with nonparabolic corrections is solved in order to obtain the multisubband structure. Relevant microscopic scattering mechanisms due to acoustic and intervalley phonons, surface roughness, and ionized impurities are included in the simulation. A flux-conserving discretization scheme based on the uniform total energy grid is employed to avoid excessive numerical diffusion originating from the conventional kinetic-energy-based upwind scheme. We report an interesting kink behavior in the output characteristics and study the electron energy distribution inside the transistor as a function of bias conditions and scattering mechanisms.      

硅场致发射理论模型

本文讨论影响硅场致发射的因素，以及建立硅场发射理论应考虑的问题。     

铂在硅中引进的深能级

本文用点群方法分析了铂在硅单晶中引起的晶格畸变,在此基础上对杂质能级作了EHT计算.计算结果与有关的实验数据进行了比较.     

用于旋转弹体态测量的硅微机械陀螺理论和实验研究

报道了无驱动结构的硅微机械陀螺,该陀螺用于测量旋转弹圆锥运动时的姿态角和姿态角速率.陀螺的结构决定了其可同时敏感旋转弹在滚动、偏航和俯仰3个方向上的角速度.分析了陀螺的敏感机理并提出了陀螺信号的解算方法.通过模拟圆锥运动的实验,证明了陀螺敏感机理和解调方法的正确性.最后给出了主要性能指标.     

硅基二氧化硅波导的双折射效应补偿理论分析

使用有限元方法分析了硅基二氧化硅波导的两种偏振补偿方法的可行性.结果表明采用应力释放槽和调节上包层热膨胀系数都可改善波导的偏振相关性.采用应力释放槽可以释放波导中的由于硅衬底与二氧化硅热膨胀系数失配造成的压应力,可以影响芯区附近的应力分布,但是只有释放槽的深度达到一定值时才能改善波导的偏振相关性,增大槽的宽度也在一定程度改善偏振相关性,但效果较差.调节波导上包层的热膨胀系数可以很好的解决波导的偏振相关问题,而调节波导的其它层的热膨胀系数对波导的偏振相关作用较小.     

硅基二氧化硅波导的双折射效应补偿理论分析

使用有限元方法分析了硅基二氧化硅波导的两种偏振补偿方法的可行性.结果表明采用应力释放槽和调节上包层热膨胀系数都可改善波导的偏振相关性.采用应力释放槽可以释放波导中的由于硅衬底与二氧化硅热膨胀系数失配造成的压应力,可以影响芯区附近的应力分布,但是只有释放槽的深度达到一定值时才能改善波导的偏振相关性,增大槽的宽度也在一定程度改善偏振相关性,但效果较差.调节波导上包层的热膨胀系数可以很好的解决波导的偏振相关问题,而调节波导的其它层的热膨胀系数对波导的偏振相关作用较小.