Effect of Mixing Entropy on the Static Yield Stress of a Liquid Dispersion of Solid Particles: Comparison between Si3N4and Ca3(PO4)2Aqueous Suspensions

Experimental measurements of the static yield stresses τ of silicon nitride (SN, Si₃N₄) and α-tricalcium phosphate (TCP, α-Ca₃(PO₄)₂) aqueous dispersions have been performed for different pH values of the liquid medium and, as a result, the two τ vs pH behaviors are quite different. In agreement with the DLVO theory, the static yield stress value for silicon nitride is maximal at the isoelectric point of the slurry (pH_iep^(SN)= 8.0 ± 0.1) and, for higher and/or lower suspension pH values, it decreases progressively. On the other hand, in tricalcium phosphate dispersed systems, the maximum value of τ is not observed at the isoelectric point (pH_iep^(TCP)= 6.7 ± 0.1) but two relative maximum values, τ_aand τ_b, are observed for two suspension pH values in the acid/basic environments, namely, for pH pH_iep^(TCP). First, displacements of the pH from the isoelectric point in both environments are accompanied by an increase in τ; second, after the maximum τ values have been reached, the static yield stress decreases with the increase in the [H⁺]/[OH⁺] ions in the solution. It is shown that this phenomenon can be interpreted as an effect of the mixing entropy relative to the solid TCP aggregates, which is very sensitive to the suspension pH. Phenomenological and theoretical explanations are developed, respectively, by a heuristic recasting of the Hamaker expression for the London–van der Waals forces and by a relationship between the static yield stress and the number of solid aggregates; this relation is based on recently proposed methods for investigating the agglomeration/adsorption phenomena in a dispersed system.     

Comparative surface and bulk analysis of oxygen in Si3N4 powders

Summary Five commercially available -Si₃N₄ powders and one in the modification were subjected to Auger electron spectroscopy (AES) and carrier-gas-heat extraction (CGHE) analysis.AES depth profiles of the oxygen/nitrogen ratio could be obtained, from which total oxygen contents were calculated and compared to CGHE data. It is demonstrated that by the latter method also dissolved oxygen in -Si₃N₄ is detected, whereas by AES only chemically bound oxygen can semiquantitatively be analyzed. Evidence is found for the existence of water, adsorbed or present as hydroxyl groups, near the surface.

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Vergleichende Oberflächen- und Bulkanalyse von Sauerstoff in Si₃N₄-Pulvern

List of Symbols A Surface area of an idealized Si₃N₄ grain - c _o ^AES Bulk concn. (by wt.) of oxygen in Si₃N₄ as estimated from AES depth profiles - C _O ^GHE Bulk concn. (by wt.) of oxygen in Si₃N₄ as obtained using CGHE in the fixed temperature mode - C _pr Bulk concn. (by wt.) of oxygen in Si₃N₄ as obtained using CGHE in the temperature programme mode - C_surf Bulk concn. (by wt.) of oxygen in Si₃N₄, tentatively assigned to superficial oxygen on Si₃N₄ particles, as obtained using CGHE in the temperature programme mode - C _U c _o ^AES as recalculated from X_U - d Diameter of an idealized Si₃N₄ grain (1 m) - M_index Formula mass of the species named in the index (O, 2 SiO₂, Si₃N₄) - m _o Mass of oxygen in the Si₃N₄ material - M_x Estimated formula mass of a (SiO₂)_2XSi₃N₄ compound as detected by AES via X - r Radius of an idealized Si₃N₄ grain (0.5 m) - V Volume of an idealized Si₃N₄ grain - X atomic oxygen-to-nitrogen ratio (AES) - X_a X values obtained in the scanning beam (area) mode - X_dec X values obtained in the fixed beam (point) mode after about 30 min measuring time (i.e., in some cases, severe decomposition) - X_p X values obtained in the fixed beam (point) mode within about 2 min measuring time (before severe decomposition) - X_U Background value for X in the AES depth profiles - xxps Atomic oxygen-to-nitrogen ratio as obtained from XPS data - Z Sputter depth - Z _E End value for the integration below the depth profile curves - _O Oxygen mass per unit area - _O Oxygen mass per unit volume (recalculated bulk concentration) - _U Oxygen mass per unit volume as recalculated from X_U.     

Non-isothermal crystallization kinetics of recycled PET-Si3N4 nanocomposites

Poly(ethylene terephthalate) (PET) is an important industrial material and has been widely applied in consumer products. Due to its slow crystallization rate, nanoparticles are incorporated into PET to function as heterogeneous nucleating agents. In this study, the non-isothermal crystallization behavior of recycled PET-silicon nitride (Si₃N₄) nanocomposites was investigated by differential scanning calorimetry (DSC). In the general analysis of the non-isothermal crystallization curves, it was found that the Si₃N₄ nanoparticles could effectively accelerate the nucleation of PET, but the crystal growth rate was slowed down when the Si₃N₄ content was more than 1 wt%. This might be attributed to the interaction between the PET chains and the surface-treated Si₃N₄ nanoparticles. Results obtained from Avrami and Mo treatments agreed well with the general analysis. Application of the Kissinger method and isoconversional method of Flynn-Wall-Ozawa also showed that Si₃N₄ nanoparticles had a good nucleation effect on the crystallization of PET, and the crystal growth was hindered by Si₃N₄ when the particle loading is higher than 1 wt%.     

Factor analysis of AES depth profiles on Si3N4 ceramic powders

Summary Factor analysis of AES depth profiles is performed on combined spectral regions, thus employing a maximum amount of information. Applied to untreated and oxidized, sub-gm ceramic Si₃N₄ powders as well as to Si₂N₂O, this method reveals significant differences with regard to number and stoichiometry of main components. In case of hydrolyzed Si₃N₄, no significant difference compared with the untreated powder was observed, probably because of irradiation effects.

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Faktorenanalyse von AES-Tiefenprofilen an keramischen Si₃N₄-Pulvern

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Dedicated to Prof. Dr. G. Tölg on the occasion of his 60th birthday     

A reactive Si4 cage: K(SitBu3)3Si4

KR∗₃Si₄, 2, (R∗ = SitBu₃), formed by the reaction of R∗₄Si₄ with 2 KC₈, is an orange red solid stable at r.t. but decomposes in solution into R∗₄Si₄ and a compound that reacts with excess Me₃SiCl to form (Me₃Si)₄R∗₃ClSi₈. Compound 2 is very sensitive to air and moisture. Its alcoholysis does not stabilize the protonated species HR∗₃Si₄ and ends up in R∗₃Si₃H₃. Compound 2 reacts with 1/2 equivalent ICl to form a violet solid R∗₆Si₈. A 1:1 reaction of 2 with SiBr₄ runs differently to form ditetrahedranyl, R∗₃Si₄-Si₄R∗₃ which is stable at r.t. but transforms into its violet isomer R∗₆Si₈ at higher temperatures. Compound 2 crystallizes as R∗₃Si₄K(18-crown-6) and its crystal structure shows a Si₄-cage with a short Si-K linkage. It opens up at higher temperatures to acquire a unique structure in which a -CH₂-CH₂- group detaches itself from an ether to insert into Si-Si linkage of Si₄-unit to form a bicyclic ring. The residual chain (CH₂)₁₀O₆ closes itself on to a Si atom to form R∗₃Si₃(CH₂-CH₂)Si(C₁₀H₂₀O₆)K(18-C-6).     

Formation mechanism of Sialon in alumina-ferro-silicon-nitride composite under nitrogen atmosphere at high temperatures

Sialon bonded Al₂O₃ composites were successfully synthesized using ferro-silicon nitride and different alumina sources at 1500 °C and 1600 °C under N₂ atmosphere. Fused corundum, sintered alumina and the mixture of both were used as different alumina sources to evaluate their effects on the formation of Sialon phases. The samples were characterized by X-ray diffraction (XRD), Scanning electron microscope (SEM) and Energy-dispersive X-ray spectroscopy (EDAS). The results show that the Sialons (β-Sialon (Si₂Al₄O₄N₄) and 15R-Sialon (SiAl₄O₂N₄)) contents are dependent on the sintering temperature and alumina sources. Formation mechanism of Sialon in samples prepared with different alumina sources is different. Sintered alumina can react with Si₃N₄ directly to form Sialon. In sample prepared with fused corundum, AlON is formed first and then it reacts with Si to form Sialon. Sintered alumina exhibits better reactivity than fused corundum. Sialon is more stable than AlON under N₂ atmosphere at high temperature with the existence of carbon.     

Transient SIMS depth-profiles at the interface Si3N4/GaAs

Summary A transient secondary ion signal enhancement during sputtering through the interface of a two-layer target of Si₃N₄/GaAs could be demonstrated to be an artefact caused by the bombardment with oxygen ions, which were used as a primary beam. A simple model is established which describes ion-induced composition changes during sputtering (sputter-emission and recoil implantation from the surface, cascade mixing, and implantation of projectiles). The application of this model permits the simulation of internal profiles of a trace element, the matrix atoms and of implanted primary ions, and consequently the simulation of the emitted particle flux during sputtering. These calculations indicate an accumulation of implanted primary ions at the GaAs-side of the interface which considerably enhances the yield of positive secondary ions in this zone. The calculated response fits experimental data within a factor of less than 2.

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Quantitative SIMS-Analyse an der Grenzfläche Si₃N₄/GaAs

Zusammenfassung Bei der Analyse von Verunreinigungen (Chrom) in Si₃N₄-Schichten auf GaAs mit der Sekundärionen-Massenspektrometrie (SIMS) tritt am Schichtübergang ein transienter Anstieg der Intensität positiver Sekundärionen von Chrom und Arsen auf. Es wird experimentell gezeigt, daß dieser Anstieg nicht auf das Vorhandensein einer parasitären Zwischenschicht aus Chrom oder eines Oxides, sondern auf den Beschuß mit einem Sauerstoff-Primärstrahl zurückzuführen ist. Es wurde ein einfaches Modell erstellt, das die ioneninduzierten Veränderungen der gesputterten Probe beschreibt (Sputter-Emission und Recoil-Implantation aus der Oberfläche, Vermischung der Matrixatome durch Kaskadenmischung, Implantation der Primärionen). Die numerische Simulation der SIMS-Messung durch Anwendung dieses Modelles auf die untersuchten Proben zeigt eine Anhäufung implantierter Primärionen knapp hinter dem Schichtübergang. Im Fall von Sauerstoff erhöht dieser lokal die Ausbeute an positiven Sekundärionen. Der erechnete Verlauf dieser Signalüberhöhung stimmt innerhalb eines Faktors < 2 mit den Experimenten überein.

     

Micro-thermal analysis of thermal conductance distribution in advanced silicon nitrides

A micro-thermal analysis technique was applied to investigate advanced silicon nitride materials, which exhibit high thermal conductivity. Local thermal properties in the microstructure were evaluated, and the grain boundaries were observed to have lower thermal conductance than the Si₃N₄ grains. It was found that thermal conductance both in the grains and boundaries was lowered by the addition of the sintering aid Al₂O₃, which is soluble in Si₃N₄ grains. This indicates that high thermal conductivity in silicon nitride ceramics is achieved both by grain growth, leading to a reduction in boundary density, and by eliminating soluble elements in silicon nitride grains. This revised version was published online in August 2006 with corrections to the Cover Date.     

Combined bulk and surface analysis of oxygen species in Si3N4 powders by means of carrier-gas heat-extraction methods and Auger electron spectrometry

Summary By means of the addition of 1%(v/v) C₂H₄ to He carrier gas and by application of a temperature ramp starting from 100°C in the carrier-gas heat-extraction technique, discrimination between two siloxane species in Si₃N₄ is feasible. By comparison with Auger electron spectrometry data, one species can be assigned to the surface and the other to bulk siloxane. This is demonstrated by means of two differently manufactured Si₃N₄ powders which are HF-etched or oxidized so that their — predominantly near-surface — oxygen content is decreased or increased, respectively. Additional oxygen speciation can be achieved by means of thermo-desorption of oxygen bound to hydrogen and carbon in Ar between room temperature and about 1000°C.     

Vibrational Spectra of the Cyclic SN-Compounds S4N4, S4N4H4 and S3N3Cl3

The IR and Raman spectra of solid and dissolved S₄N₄, S₄N₄H₄, S₄N₄D₄ and S₃N₃Cl₃ have been recorded and are assigned according to D_2d, C_4v and C_3v symmetry respectively. In the solid state, many forbidden bands and splittings of degenerate vibrations are observed because of the symmetry lowering in the crystals. Due to the different size and shape of the rings and to strong coupling of the normal modes there is no clear correlation between the SN ring stretching vibrations and the strength of the SN bonds, except for the one of the E modes. However, the stretching force constant show the trend expected from changes in interatomic distances.     

Electron probe microanalysis of chemical gradients in gas pressure sintered silicon nitride

During gas pressure sintering of silicon nitride (Si₃N₄) — which normally contains oxide additives such as SiO₂, Al₂O₃ and Y₂O₃ — in a resistance heated graphite furnace, a reduction of the Si₃N₄ sample takes place. At high temperatures (>1800°C) this effect is accompanied by decomposition reactions of Si₃N₄. Both lead to chemical gradients in larger components which influence the strength of the sintered article. Electron probe microanalysis (EPMA) has been carried out in order to study the influence of the crucible material [graphite (C), boron nitride (BN)] and the quantity of filling on the gradient formation.     

The Al2O3-Fe2O3 Mixed Oxidic System, II. Catalytic Decomposition of N2O

N₂O decomposition was examined over a series of Al₂O₃-Fe₂O₃ mixed oxidic solids with composition ranging from 0 to 100% of Fe₂O₃. The catalytic activity of the solids runs parallel to the number of atoms of iron in the Al_2−x Fe_xO₃ solid solution phase. Two compensation effects are present. The first corresponds to catalysts rich in alumina, and the second one to catalysts rich in hematite. This revised version was published online in June 2006 with corrections to the Cover Date.     

Ce10[Si10O9N17]Br, Nd10[Si10O9N17]Br and Nd10[Si10O9N17]Cl oxonitridosilicate halides with a new layered structure type

The isotypic oxonitridosilicate halides Ce₁₀[Si₁₀O₉N₁₇]Br, Nd₁₀[Si₁₀O₉N₁₇]Br and Nd₁₀[Si₁₀O₉N₁₇]Cl were obtained by the reaction of the respective lanthanide metals, their oxides and halides with “Si(NH)₂” in a radiofrequency furnace at temperatures around 1800 °C, using CsBr, resp. CsCl, as a flux. The crystal structures were determined by single-crystal X-ray diffraction (Pbam, no. 55, Z=2; Ce/Br: a=10.6117(9) Å, b=11.2319(10) Å, c=11.688(8) Å, R1=0.0356; Nd/Br: a=10.523(2) Å, b=11.101(2) Å, c=11.546(2) Å, R1=0.0239; Nd/Cl: a=10.534(2) Å, b=11.109(2) Å, c=11.543(2) Å, R1=0.0253) and represent a new layered structure type. The structure refinements were performed utilizing an O/N-distribution model according to Paulings rules, i.e. nitrogen was positioned on all bridging sites and mixed O/N-occupation was assumed on the terminal sites resulting in charge neutrality of the compounds. The layers consist of condensed [SiN₂(O/N)₂] and [SiN₃(O/N)] tetrahedra of Q² and Q³ type. The chemical composition of the compounds was derived from chemical analyses for Nd₁₀[Si₁₀O₉N₁₇]Br and electron probe micro analyses (EPMA) for all three compounds. The results of IR spectroscopic investigations are reported.     

Synthesis and structural characterization of Al7C3N3-homeotypic aluminum silicon oxycarbonitride, (Al7−xSix)(OyCzN6−y−z) (x∼1.2, y∼1.0 and z∼3.5)

A new aluminum silicon oxycarbonitride, (Al_5.8Si_1.2)(O_1.0C_3.5N_1.5), has been synthesized and characterized by X-ray powder diffraction (XRPD), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX) and electron energy loss spectroscopy (EELS). The title compound is hexagonal with space group P6₃/mmc and unit-cell dimensions a=0.322508(4) nm, c=3.17193(4) nm and V=0.285717(6) nm³. The atom ratios of Al:Si and those of O:C:N were, respectively, determined by EDX and EELS. The initial structural model was successfully derived from the XRPD data by the direct methods and further refined by the Rietveld method. The crystal is most probably composed of four types of domains with nearly the same fraction, each of which is isotypic to Al₇C₃N₃ with space group P6₃mc. The existence of another new oxycarbonitride (Al_6.6Si_1.4)(O_0.7C_4.3N_2.0), which must be homeotypic to Al₈C₃N₄, has been also demonstrated by XRPD and TEM.     

La4(Si5.2Ge2.8O18)(TeO3)4 and La2(Si6O13)(TeO3)2: Intergrowth of the lanthanum(III) tellurite layer with the XO4 (X=Si/Ge) tetrahedral layer

Two novel lanthanum(III) silicate tellurites, namely, La₄(Si_5.2Ge_2.8O₁₈)(TeO₃)₄ and La₂(Si₆O₁₃)(TeO₃)₂, have been synthesized by the solid state reactions and their structures determined by single crystal X-ray diffraction. The structure of La₄(Si_5.2Ge_2.8O₁₈)(TeO₃)₄ features a three-dimensional (3D) network composed of the [(Ge_2.82Si_5.18)O₁₈]⁴⁻ tetrahedral layers and the [La₄(TeO₃)₄]⁴⁺ layers that alternate along the b-axis. The germanate-silicate layer consists of corner-sharing XO₄ (X=Si/Ge) tetrahedra, forming four- and six-member rings. The structure of La₂(Si₆O₁₃)(TeO₃)₂ is a 3D network composed of the [Si₆O₁₃]²⁻ double layers and the [La₂(TeO₃)₂]²⁺ layers that alternate along the a-axis. The [Si₆O₁₃]²⁻ double layer is built by corner-sharing silicate tetrahedra, forming four-, five- and eight-member rings. The TeO₃²⁻ anions in both compounds are only involved in the coordination with La³⁺ ions to form a lanthanum(III) tellurite layer. La₄(Si_5.2Ge_2.8O₁₈)(TeO₃)₄ is a wide band-gap semiconductor.     

g-C_3N_4/CaTi_2O_5复合材料制备及其光催化性能

利用类石墨氮化碳(g-C_3N_4)和亚稳相钙钛氧化物(CaTi_2O_5)固相法制备C_3N_4/CaTi_2O_5复合材料。利用X射线衍射(XRD)、金相显微镜、扫描电子显微镜(SEM)及附带能谱分析仪(EDS)和N2吸附-脱附对样品的显微结构和比表面积进行检测分析,并用紫外-可见吸收光度计(UV-Vis)测试了样品的光吸收性能,研究C_3N_4与CaTi_2O_5物质的量之比(nC_3N_4/nCaTi_2O_5)对C_3N_4/CaTi_2O_5复合样品的物相结构和微观形貌的影响,同时考察C_3N_4/CaTi_2O_5复合样品在可见光照射下光催化降解罗丹明染料效果。实验结果表明:相比纯C_3N_4和CaTi_2O_5样品,C_3N_4/CaTi_2O_5复合样品在可见光下具有较高的光催化性能,随着nC_3N_4/nCaTi_2O_5增加,样品的光催化降解率随之增加而后降低,当nC_3N_4/nCaTi_2O_5=1∶1时,样品的光催化降解率达到最大值99.5%,并且循环重复利用5次后,样品的光催化剂降解率仍几乎保持不变。复合样品光催化性能提高主要归因于复合能级结构有效地抑制了电子和空穴复合所致。     

g-C3N4/CaTi2O5复合材料制备及其光催化性能

利用类石墨氮化碳（g-C₃N₄）和亚稳相钙钛氧化物（CaTi₂O₅）固相法制备C₃N₄/CaTi₂O₅复合材料。利用X射线衍射（XRD）、金相显微镜、扫描电子显微镜（SEM）及附带能谱分析仪（EDS）和N₂吸附-脱附对样品的显微结构和比表面积进行检测分析,并用紫外-可见吸收光度计（UV-Vis）测试了样品的光吸收性能,研究C₃N₄与CaTi₂O₅物质的量之比（n_C3N4/nCaTi₂O₅）对C₃N₄/CaTi₂O₅复合样品的物相结构和微观形貌的影响,同时考察C₃N₄/CaTi₂O₅复合样品在可见光照射下光催化降解罗丹明染料效果。实验结果表明：相比纯C₃N₄和CaTi₂O₅样品,C₃N₄/CaTi₂O₅复合样品在可见光下具有较高的光催化性能,随着n_C3N4/nCaTi₂O₅增加,样品的光催化降解率随之增加而后降低,当n_C3N4/nCaTi₂O₅=1：1时,样品的光催化降解率达到最大值99.5%,并且循环重复利用5次后,样品的光催化剂降解率仍几乎保持不变。复合样品光催化性能提高主要归因于复合能级结构有效地抑制了电子和空穴复合所致。     

On the solid solution of the spinel phase in the system NiO-Al2O3

The solid solubility of Al₂O₃ in NiAl₂O₄ spinel has been investigated by powder X-ray diffraction of samples prepared by solid state synthesis. The solid solution region found was in agreement with a previous report. The cubic cell parameter of the spinel solid solution was observed to decrease with increasing alumina content. Spinel with high alumina content was shown to be close to an inverse spinel as previously reported for stoichiometric NiAl₂O₄ and the inversion parameter proved to be relatively independent of the overall composition.     

15N/14N Isotopic Exchange in the Dissociative Adsorption of N2 on Tantalum Nitride Cluster Anions Ta3N3-

Adsorption and activation of dinitrogen (N₂) is an indispensable process in nitrogen fixation. Metal nitride species continue to attract attention as a promising catalyst for ammonia synthesis. However, the detailed mechanisms at a molecular level between reactive nitride species and N₂ remain unclear at elevated temperature, which is important to understand the temperature effect and narrow the gap between the gas phase system and condensed phase system. Herein, the ¹⁴N/¹⁵N isotopic exchange in the reaction between tantalum nitride cluster anions Ta₃¹⁴N₃^- and ¹⁵N₂ leading to the regeneration of ¹⁴N₂/¹⁴N¹⁵N was observed at elevated temperature (393-593 K) using mass spectrometry. With the aid of theoretical calculations, the exchange mechanism and the effect of temperature to promote the dissociation of N₂ on Ta3N3? were elucidated. A comparison experiment for Ta₃¹⁴N₄^-/¹⁵N₂ couple indicated that only desorption of ¹⁵N₂ from Ta₃¹⁴N₄¹⁵N₂^- took place at elevated temperature. The different exchange behavior can be well understood by the fact that nitrogen vacancy is a requisite for the dinitrogen activation over metal nitride species. This study may shed light on understanding the role of nitrogen vacancy in nitride species for ammonia synthesis and provide clues in designing effective catalysts for nitrogen fixation.