强流脉冲离子束辐照双层靶能量沉积的数值模拟

利用拟合实验测得的TEMP Ⅱ型加速器磁绝缘二极管电压波形及其焦点附近束流密度曲线,建立了Gauss分布模型.采用Monte Carlo方法研究了强流脉冲离子束与铝材镀有不同厚度金膜的双层靶(金膜与铝材合称为双层靶)之间的相互作用,模拟了能量沉积的演化过程和随不同金膜厚度的变化情况.对脉冲离子束强化薄膜粘结性进行了探讨. 关键词： 强流脉冲离子束 双层靶 能量沉积 Monte Carlo方法     

高功率离子束辐照膜基双层靶温度场的数值研究

采用TRIM程序模拟高功率离子束与铝基钛膜双层靶的相互作用.计算了束流在靶材内的能量沉积及分布情况,并以此沉积能量为热源项,采用有限差分方法求解非线性热传导方程,得到了温度场的分布规律,分析了不同离子流密度对界面物质状态的影响.结果表明,离子束电流密度在100—200 A/cm²之间取值时,脉冲结束后界面处两种物质均达到熔融状态.     

利用强流脉冲离子束技术在室温下沉积类金刚石薄膜研究

利用强流脉冲离子束技术在Si基体上快速大面积沉积类金刚石(DLC)薄膜.电压为250kV,束流密度为250A·cm-2,脉宽为80—100ns,能流密度为5J·cm-2的离子束(主要由碳离子和氢离子组成)聚焦到石墨靶材上,使石墨靶材充分蒸发和电离,在石墨靶的法线方向的Si基体上沉积非晶的碳薄膜.Raman谱分析显示,所沉积薄膜为类金刚石薄膜.随着靶材与基体之间距离的减小,薄膜中sp3碳成分含量增加,同时硬度值也有所增大,并且薄膜的摩擦系数和表面粗糙度增加.x射线光电子能谱(XPS)分析显示薄膜中的sp3碳 关键词： 强流脉冲离子束 类金刚石薄膜 XPSRaman谱分析     

强流脉冲离子束与靶作用域值的研究

结合Monte Carlo 方法和热力学方法，建立了脉冲离子束能量模型以及靶材相变温度模型. 利用该模型可以确定产生喷发等离子体的域值，得到强流脉冲离子束与靶材作用过程中靶材 温度的变化规律以及形成喷发等离子体的初始温度. 关键词： 强流脉冲离子束 靶 域值 数值研究     

烧蚀对强脉冲离子束在高分子材料中能量沉积的影响

高能量密度纳秒量级强脉冲离子束辐照材料表面的烧蚀产物和束流的相互作用,可能对束流在靶中的能量沉积产生影响,进而影响烧蚀情况下的束流分析和相关应用的优化.本文采用红外成像方法对横截面能量密度1.5—1.8 J/cm~2的强脉冲离子束在304不锈钢和高分子材料上的能量沉积进行了测量分析.结果表明在高分子材料上,在超过一定能量密度后,束流引发材料表面烧蚀产物的屏蔽效应使得大部分束流能量不能沉积在靶上.采用有限元方法对束流引发的温度场分布进行了计算,验证了高分子材料的低热导率以及低分解温度使其在脉冲辐照早期即开始热解,烧蚀产物对后续束流能量的进一步沉积产生屏蔽.此类效应在金属上存在的可能性和对束流诊断等应用的影响,亦进行了讨论.     

强流脉冲离子束辐照靶材烧蚀效应二维数值研究

对强流脉冲离子束(IPIB)辐照Ti靶的烧蚀效应进行了二维数值研究.得到了表面烧蚀物质随脉冲时间的变化关系.得出TEMP Ⅱ 型加速器产生的脉冲束流辐照靶材时引起的汽、液化均是从表面开始、并且汽化过程中表面物质被层层烧蚀的结论.同时，得到中心区的平均烧蚀速度为10m/s 数量级，它远小于产生的烧蚀等离子体的喷发速度.得到脉冲期间靶材内部不同位置烧蚀斑痕形状的时间演化过程，以及束流中含有的离子种类分额不同时IPIB辐照过程产生的不同效果. 关键词： 强流脉冲离子束 靶 烧蚀过程 二维数值模拟     

低能强流混合离子束空间电荷补偿度研究

空间电荷效应是影响束流传输和束流品质的一个重要因素，特别是对于低能量强流离子束来说。离子束与束流传输线中的剩余气体分子通过电离反应等产生大量二次电子，受离子束的空间电势约束，可以部分补偿空间电荷效应。为了深入研究强流束在低能段的传输，需要准确测量束流的空间电荷补偿度(SCCD)，尤其是混合束流的SCCD。利用一台三栅网式能量分析仪和一台基于128通道皮安表系统构成的束流剖面探测器，分别测量了不同流强和束流分布下的混合O离子束的二次离子能量分布和束流流强分布，从而计算得出SCCD。实验结果表明，在1.0×10^-5 Pa的真空度下，不同流强的混合O离子束的SCCD基本在70%左右；不同束流分布对空间电势分布影响较大，对离子束的SCCD也会有一定程度的影响。     

强流脉冲离子束辐照靶及其喷发的数值研究

利用拟合实测的TEMP Ⅱ型加速器磁绝缘二极管(MID)电压波形及其焦点附近束流密度曲线，建立了Gaussian分布模型，据此计算了与靶作用的离子的能量及数量，采用Monte Carlo(MC)方法计算了沉积在靶内的能量.并以此作为热源，与流体动力学(HD)模型相结合，对不同的靶状态采用相应的状态方程，模拟计算了靶内压力演化情况; 同时对烧蚀产生的等离子体采用理想气体状态方程, 结合HD方程组, 模拟计算了喷发过程中压力的空间演化过程. 关键词： 强流脉冲离子束 Gaussian模型 HD方程 数值研究     

强流脉冲离子束能量密度分布的红外诊断

强流脉冲离子束在靶上的能量密度分布是其研究和应用的一个重要参数。为了解决现有束流能量密度诊断方法的不足,利用红外成像仪测量靶背面的温度分布,从而建立了强流脉冲离子束能量密度分布的红外诊断方法。对能量密度1 J/cm2量级、脉冲宽度为102 ns量级的束流,该方法测量误差好于5%,空间分辨率可达到1~2 mm,具有操作简便、成本低的优点,是强脉冲能量沉积分布的一种高效迅速的诊断方法。     

强流脉冲离子束能量密度分布的红外诊断

强流脉冲离子束在靶上的能量密度分布是其研究和应用的一个重要参数。为了解决现有束流能量密度诊断方法的不足,利用红外成像仪测量靶背面的温度分布,从而建立了强流脉冲离子束能量密度分布的红外诊断方法。对能量密度1J/cm2量级、脉冲宽度为102 ns量级的束流,该方法测量误差好于5%,空间分辨率可达到1~2mm,具有操作简便、成本低的优点,是强脉冲能量沉积分布的一种高效迅速的诊断方法。     

Optimizing the Parameters of Zr Alloy Doping with Al,Fe, and Mo via the Irradiation of Respective Films on Zr Surfaces Using Ar Ions

The effect the sputtering of a film–substrate system has on the modification of near-surface layers of zirconium alloy E110 (Zr–1% Nb) in the ionic mixing regime upon irradiation by a beam of argon ions with a wide energy spectrum is considered. It is shown that to increase the atoms’ efficiency of penetration and achieve the optimum doping conditions via ionic mixing upon irradiation by a beam of ions with a broad energy spectrum, the ion energy in the beam must be increased while simultaneously lowering the reduced atomic beam mass by using a combined ion beam of different masses.     

Study of intermixing and Zr-silicide formation using swift heavy ion irradiation

Swift heavy ion (SHI) beam induced irradiation is an established technique for investigating structural modifications in thin films depending on the S _e sensitivity of material. Intermixing due to 120 MeV Au ion irradiation at different fluences from 10¹² to 10¹⁴ ions/cm² has been reported as a function of ion fluence in a-Si/Zr/a-Si thin films on Si substrate. The samples are characterized before (pristine) and after irradiation using Grazing Incident X-ray Diffraction (GIXRD) and Rutherford Backscattering Spectroscopy (RBS), which confirm the formation of ZrSi at thin film interface. It is suggested that mixing is mainly due to electronic energy loss since the energy transferred from high energy ions seems to create a transient molten zone along the ion track. It is found that the interface mixing increases linearly with the increase in ion fluence. The mixing effect explained in the framework of Thermal spike model. The irradiation effect on the surface roughness of the system is measured using Atomic Force Microscopy (AFM) technique. The current conduction mechanism and Schottky barrier height are also calculated by taking I–V curves across the Metal/Si junction.     

Plasma‐Substrate Interaction during Plasma Deposition on Polymers

The initial stage of film growth during plasma deposition on polymers determines many film properties such as morphology and structure, interphase formation and adhesion. Therefore, the plasma‐substrate interaction is investigated regarding the energy density during film growth, which is defined by the energy flux per depositing atom. The flux of film‐forming species and the flux of energetic particles were determined for metal sputtering (silver films) and plasma polymer deposition (amino‐functional hydrocarbon films). It is shown that enhanced energy densities can be obtained during the initial film growth due to reduced deposition rates and mixing with the polymer substrate (interphase formation). Thus, good adhesion on polymers such as polyethylene terephthalate (PET) has been achieved. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of ion velocity on SHI-induced mixing in Ti/Bi system

Energetic ion beams are proving to be versatile tools for modification and depth profiling of materials. The energy and ion species are the deciding factor in the ion-beam-induced materials modification. Among the various parameters such as electronic energy loss, fluence and heat of mixing, velocity of the ions used for irradiation plays an important role in mixing at the interface. The present study is carried out to find the effect of the velocity of swift heavy ions on interface mixing of a Ti/Bi bilayer system. Ti/Bi/C was deposited on Si substrate at room temperature by an electron gun in a high-vacuum deposition system. Carbon layer is deposited on top to avoid oxidation of the samples. Eighty mega electron volts Au ions and 100?MeV Ag ions with same value of S_e for Ti are used for the irradiation of samples at the fluences 1?×?10¹³–1?×?10¹⁴ ions/cm². Different techniques like Rutherford backscattering spectroscopy, atomic force microscopy and grazing incidence X-ray diffraction were used to characterize the pristine and irradiated samples. The mixing effect is explained in the framework of the thermal spike model. It has been found that the mixing rate is higher for low-velocity Au ions in comparison to high-velocity Ag ions. The result could be explained as due to less energy deposition in thermal spike by high-velocity ions.     

Structure and phonon spectrum of a submonolayer Ni film on the surface of Cu(100)

The equilibrium atomic structure and the phonon spectra of a submonolayer (θ = 0.5 monolayer) Ni film deposited on the surface of Cu(100) are calculated using the potentials obtained by the embedded atom method. We consider atomic relaxation, the vibrational state density distribution on Ni and substrate atoms, and polarization of vibrational modes. Variation of the phonon spectrum upon segregation of Cu atoms on the film surface is considered. It is shown that mixing of vibrations of Ni adatoms with vibrations of substrate atoms occurs in the entire frequency range, leading to a frequency shift of the vibrational modes of the substrate and to the occurrence of new vibrational states atypical of a clean surface. The Cu(100)–c(2 × 2)–Ni structure is dynamically stabler when placed in the subsurface layer of the substrate.     

Atomistic modeling of femtosecond laser-induced melting and atomic mixing in Au film - Cu substrate system

The mechanisms of femtosecond laser-induced transient melting and atomic mixing in a target composed of a 30 nm Au film deposited on a bulk Cu substrate are investigated in a series of atomistic simulations. The relative strength and the electron temperature dependence of the electron-phonon coupling of the metals composing the layered target are identified as major factors affecting the initial energy redistribution and the location of the region(s) undergoing transient melting and resolidification. The higher strength of the electron-phonon coupling in Cu, as compared to Au, results in a preferential sub-surface heating and melting of the Cu substrate, while the overlaying Au film largely retains its original crystalline structure. The large difference in the atomic mobility in the transiently melted and crystalline regions of the target makes it possible to connect the final distributions of the components in the resolidified targets to the history of the laser-induced melting process, thus allowing for experimental verification of the computational predictions.     

Effect of driving frequency on the structure of silicon grown on Ag(111) films by very-high-frequency magnetron sputtering

The effect of driving frequency on the structure of silicon grown on Ag(111) film is investigated, which was prepared by using the very-high-frequency(VHF)(40.68 MHz and 60 MHz) magnetron sputtering. The energy and flux density of the ions impinging on the substrate are also analyzed. It is found that for the 60-MHz VHF magnetron sputtering, the surface of silicon on Ag(111) film exhibits a small cone structure, similar to that of Ag(111) film substrate, indicating a better microstructure continuity. However, for the 40.68-MHz VHF magnetron sputtering, the surface of silicon on Ag(111) film shows a hybrid structure of hollowed-cones and hollowed-particles, which is completely different from that of Ag(111)film. The change of silicon structure is closely related to the differences in the ion energy and flux density controlled by the driving frequency of sputtering.     

Preparation and structural properties of thin carbon films by very-high-frequency magnetron sputtering

Growth and structural properties of thin a-C films prepared by the 60 MHz very-high-frequency(VHF) magnetron sputtering were investigated. The energy and flux of ions impinging the substrate were also analyzed. It is found that the thin a-C films prepared by the 60 MHz sputtering have a lower growth rate, a smooth surface, and more sp~3 contents.These features are related to the higher ion energy and the lower ions flux onto the substrate. Therefore, the 60 MHz VHF sputtering is more suitable for the preparation of thin a-C film with more sp~3 contents.     

Ion-beam mixing of multilayered targets ballistic effects

In this work a Monte-Carlo method of dynamical type is used to simulate the ion-beam mixing of a composite, multilayered target. The calculation refers to a Ni-Ta structure, on a silicon substrate, bombarded with As⁺ ions and elucidates the effect of the dose and of the target structure on the intermixing of the target constituents.     

Peculiarities of pulsed ion implantation from a laser plasma containing multiply charged ions

A mathematical model describing the dynamics of a pulsed laser plasma with multiply charged ions, as well as the formation of the accelerated ion flow in an external magnetic field, is developed. Experimental studies and mathematical simulation by the particle-in-cell method are used to determine the role of multiply charged ions in the process of ion implantation into a silicon substrate from the pulsed plasma containing singly and doubly charged titanium ions. The plasma spreads between parallel-plate electrodes (Ti target and Si substrate) along the normal to the surface of the target. Ions are accelerated by high-voltage negative pulses applied to the substrate. It is found that doubly charged ions effectively participate in the implantation process when an external electric field is applied very soon after the laser action on the target. The application of a high-voltage pulse with an amplitude of 50 kV 0.5 μs after a laser pulse leads to ion implantation with an energy close to 100 keV. With increasing delay in the application of the high-voltage pulse, the upper boundary of the energy spectrum of implanted ions is displaced towards lower energies. Comparison of the depth profiles of titanium distribution in silicon calculated from the results of simulation are compared with the experimental profiles shows that the model developed here correctly describes the formation of the high-energy component of the ion flow, which is responsible for defect formation and doping of deep layers of the substrate.