ZnTe晶体中光学整流产生的THz辐射及其电光探测研究

借助抽运-探测技术研究了ZnTe晶体中光学整流产生的太赫兹(THz)辐射，利用ZnTe晶体的线性电光效应探测THz辐射场分布，观察到了较窄(约为0.2 ps)的THz场分布及相应较宽(响应超过4 THz，半峰宽约为2.4 THz)的THz频谱，并运用琼斯矩阵对实验结果进行了理论拟合. 研究了飞秒激光脉冲波长(750—850 nm)、脉冲宽度(56—225 fs)和晶体旋转与THz辐射产生的关系. 同时改变探测光偏振方向进行偏振调制，并从理论上分析了偏振调制对THz辐射探测的影响. 关键词： THz辐射 光学整流 电光探测 ZnTe     

铁磁异质结构中的超快自旋流调制实现相干太赫兹辐射

利用飞秒激光脉冲在生长于二氧化硅衬底上的W/CoFeB/Pt和Ta/CoFeB/Pt两类铁磁/非磁性金属异质结构中实现高效、宽带的相干THz脉冲辐射.实验中, THz脉冲的相位随外加磁场的反转而反转,表明THz辐射与样品的磁有序密切相关.为了考察三层膜结构THz辐射的物理机制,分别研究了构成三层膜结构的双层异质结构(包括CoFeB/W, CoFeB/Pt和CoFeB/Ta)的THz辐射.实验结果都与逆自旋霍尔效应相符合, W/CoFeB/Pt和Ta/CoFeB/Pt三层膜结构所辐射的THz强度优于同等激发功率下的ZnTe (厚度0.5 mm)晶体.此外,还研究了两款异质结构和ZnTe的THz辐射强度与激发光脉冲能量密度的关系,发现Ta/CoFeB/Pt的饱和能量密度略大于W/CoFeB/Pt的饱和能量密度,表明自旋电子在Ta/CoFeB/Pt中的界面积累效应相对较小.     

级联差频产生太赫兹辐射的理论研究

针对差频产生太赫兹(THz)辐射转换效率低的缺点,提出了级联差频的新机理以提高转换效率,并以ZnTe晶体为例,对级联差频产生THz辐射的原理和过程进行了理论研究.通过对级联差频耦合波方程组的求解,得出了ZnTe晶体中级联差频的最佳抽运条件和ZnTe晶体的最佳长度,并且分析了晶体吸收、波矢失配及抽运强度对级联差频的影响.计算结果表明,通过级联差频可以大大提高THz波的转换效率,其光子转换效率甚至可以超过Manley-Rowe关系的限制. 关键词： 太赫兹辐射 差频 级联 ZnTe晶体     

物理光学 光学性质、效应

O436．4 2005031662 偏振方向对ZnTe电光THz辐射探测的影响=Effects of probe-beam polarization direction on THz detection in ZnTe[刊,中]／顾春明(上海交通大学物理系,凝聚态光谱 与光电子物理实验室．上海(200030)),刘锐…∥红外与毫 米波学报．-2004,23(5)．-333-336 在实验上研究了探测光的偏振方向对ZnTe晶体     

偏振方向对THz电光探测影响的理论研究

采用线性电光效应耦合波理论，系统地研究了用无中心反演对称性的立方晶系晶体作为探测晶体时，terahertz(THz)辐射信号和探测光的偏振方向对电光探测的影响. 研究结果发现，THz辐射和探测光的偏振方向都对电光探测影响很大，沿(110)方向传播时可以获得最大的探测灵敏度，最适合THz的横场探测. 计算研究的部分结果与已有的实验结果相一致，可为电光探测器的设计提供有用的指导. 关键词： 电光探测 THz辐射 偏振 线性电光效应耦合波理论     

基于磁控溅射和ICP刻蚀的RB-SiC表面平坦化工艺

采用射频磁控溅射技术在RB-SiC表面沉积Si平坦化层,通过正交试验研究了射频功率、Ar流量和工作气压三个因素对薄膜表面质量和形貌的影响规律,以获取最佳的薄膜沉积参数.射频功率120 W、工作气压1.2Pa和Ar流量40sccm条件下获得了最佳质量的平坦化样品,利用电感耦合等离子体对平坦化膜层进行刻蚀抛光,通过Lambda950分光光度计测试不同工艺阶段样品表面的反射率.结果表明,相比于未处理的RB-SiC初始样品,经过平坦化和等离子体刻蚀的样品表面粗糙度标准差值由1.819nm减小至0.919nm,样品表面反射率相应地提高了2%.由此说明射频磁控溅射平坦化沉积与电感耦合等离子体刻蚀的组合工艺可实现RB-SiC表面的高质量加工.     

《331》晶向ZnTe单晶的太赫兹辐射及探测

通过Te熔剂方法生长出〈331〉晶向的ZnTe体单晶,利用X射线衍射和红外透射显微技术对材料进行了测试.在钛-宝石激光器的泵浦下,利用〈331〉晶向的ZnTe晶体辐射-探测到太赫兹波,激发频谱可达5 THz左右.〈331〉晶向的ZnTe晶体表现出良好的太赫兹辐射性能.     

GaP波导型发射器产生频率可调谐太赫兹脉冲

报道了利用脉宽可调的光子晶体光纤飞秒激光放大器抽运矩形波导结构的GaP晶体太赫兹(THz) 发射器产生频率可调谐的超快THz脉冲.非线性晶体中光整流过程产生的THz辐射频率随抽运光脉冲宽度而 变化. GaP波导THz发射器可通过波导的几何尺寸来控制色散,以达到增加有效作用长度和提高输出功率的目的. 不同横截面尺寸的波导型发射器的THz辐射峰值频率随相位匹配条件的改变而改变,加以脉宽调节技术, 可以在大频谱范围获得频谱精细可调的THz脉冲.实验中在1 mm×0.7 mm的波导型THz发射器中获得了 频率可调谐的THz脉冲.提出实现THz辐射频率大范围调谐的GaP波导型阵列发射器的实施方案.     

THz辐射电光探测原理分析新方法

采用线性电光效应耦合波理论，得到一种全新简便的基于线性电光效应的THz辐射电光探测 原理的分析方法.这种方法不仅适用于一切各向同性晶体，也适用于探测光沿光轴传播的单 轴晶体.它可以方便地描述在探测光偏振状态和THz辐射电场方向都任意的情况下探测器的行 为，并可以得到探测器的优化设计方案.同时此方法不需要复杂的坐标变换，计算方便简洁 ，而且得到一些在其他理论中没有得到的结论，有望给电光探测器设计者提供有益的参考 . 关键词： 电光探测器 THz 线性电光效应耦合波理论     

〈331〉晶向ZnTe单晶的太赫兹辐射-探测性能理论研究

根据光整流效应辐射太赫兹理论,计算了〈331〉晶向ZnTe单晶的太赫兹辐射性能.通过与〈110〉、〈111〉晶向对比,当晶体方位角为0°或180°时,利用〈331〉晶向ZnTe单晶辐射太赫兹信号可以与〈111〉晶向相当,强于〈110〉晶向.利用电光取样原理,计算了〈331〉晶向ZnTe单晶的太赫兹探测性能,通过理论计算为〈331〉晶向ZnTe晶体有效辐射太赫兹波提供理论依据.     

Observation of ultra-broadband terahertz emission from ZnTe films grown by metaloganic vapor epitaxy

ZnTe films were grown on (0001) sapphire substrates by the metalorganic vapor phase epitaxy (MOVPE) method. Single crystalline (111) ZnTe epitaxial layers were confirmed by x-ray diffraction, reflection high-energy electron diffraction, and cathodoluminescence measurements. Emission of THz radiation with a spectral distribution up to 40 THz was clearly observed from the ZnTe film with a thickness of 10 μm. The results show that MOVPE is a promising growth method for obtaining high-quality ZnTe epitaxial films on sapphire substrates, which paves the way for obtaining thinner ZnTe films to provide a flatter frequency response in THz device applications.     

Difference-Frequency Generation of THz Radiation via Parametric Three-Wave Interaction in CdTe and ZnTe Crystals

Difference-frequency generation of terahertz (THz) radiation in a collinear single-crystal scheme with distributed feedback implemented by means of parametric interaction of counterpropagating optical waves in a periodically inhomogeneous medium exhibiting quadratic nonlinearity is investigated. Using ZnTe and CdTe crystals optically pumped at λ = 0.77 and 1.06 μm, respectively, as an example, the possibility of obtaining parametric generation of THz radiation with an optical-to-THz conversion efficiency exceeding 10^–3 (with an extremely narrow line of oscillation of less than 4 GHz for ZnTe and less than 9 GHz for CdTe at 1 THz) is demonstrated in the undepleted-pump-intensity approximation. The obtained results can be used for construction of narrow-band lasers in the THz frequency range with an output power (in the quasicw regime of oscillation) of about 10⁵ W/cm².     

Experimental study on terahertz radiation

In this letter, we describe a coherent subpicosecond terahertz (THz) spectroscopy system based on nonresonant optical rectification for the generation of THz radiation. We studied the two-photon absorption (TPA) of ZnTe induced by femtosecond laser pulses via THz generation, and its influence on the generation of THz radiation. Experimental results demonstrated that the intensity of pump beam against TPA must be traded off to get an optimum generation of THz radiation. As an example, we measured absorption spectrum of water vapor by time-domain spectroscopy (TDS) in the frequency range from 0.5 to 2.5 THzwith a high overall accuracy.     

Use of the organic crystal DAST for terahertz beam applications

We report the use of the organic crystal DAST as a freely propagating electromagnetic-wave sensor at terahertz (THz) frequency. We also report the result of using a DAST crystal as a mid-IR THz emitter. Compared with the optical rectification from our best ZnTe emitter, that obtained by use of DAST demonstrates a sixfold enhancement of radiation at 7-20 THz.     

利用国内生长的有机晶体DAST作为THz源的研究

利用时域光谱技术分别测量了通过光整流法在国内新生长的有机晶体DAST和国际常用的高效能THz晶体ZnTe中产生的THz脉冲的时域光谱,也测量和分析了有机晶体DAST在THz波段的色散和吸收特性,并通过热辐射探测计(4.2 K Si-bolometer)测量了THz脉冲的绝对能量。结果表明,国内新生长的有机晶体DAST的确是一种高效率的THz产生晶体,优化生长条件后将可得到更高的产生效率。     

Electrooptical sampling of ultra-short THz pulses by fs-laser pulses at 1060 nm

Electrooptical sampling of ultra-broadband terahertz (THz) radiation with the help of ultra-short 1060-nm pulses is reported for the first time. The THz pulses are generated by exciting a surface emitter (InAs) with a parabolic fiber laser amplifier delivering 100-fs pulses at a repetition rate of 75 MHz and an average power of 10 W. ZnTe and GaP crystals are used for detection and their velocity mismatch is compared at 800 nm and 1060 nm. PACS 42.55.Wd; 42.70.Nq; 42.72.Ai     

晶向ZnTe单晶的太赫兹辐射及探测

通过Te熔剂方法生长出〈331〉晶向的ZnTe体单晶,利用X射线衍射和红外透射显微技术对材料进行了测试.在钛 宝石激光器的泵浦下,利用〈331〉晶向的ZnTe晶体辐射－探测到太赫兹波,激发频谱可达5 THz左右.〈331〉晶向的ZnTe晶体表现出良好的太赫兹辐射性能.     

Determination of third-order nonlinearity in ZnTe by use of femtosecond laser pulses

Third-order nonlinearity induced by femtosecond pulses in ZnTe is investigated experimentally. We employ the transmission z-scan technique, using femtosecond pulses at 810 nm, to determine Kerr-type nonlinearity in ZnTe. The implications of our results to the terahertz (THz) radiation generation are discussed.     

THz Generation by Optical Rectification and Competition with Other Nonlinear Processes

We present a study of the competition between tera-hertz （THz） generation by optical rectification in （110） ZnTe crystals, two-photon absorption, second harmonic generation and free-carrier absorption. The two-photon nonlinear absorption coefficient, second harmonic generation efficiency and free-carrier absorption coefficient in the THz range are measured independently. The incident pump field is shown to be depleted by two-photon absorption and the THz radiation is shown to be reduced, upon focusing, by free-carrier absorption. The reduction of the generated THz radiation upon tight focusing is explained, provided that one also takes into account diffraction effects from the sub-wavelength THz source.