Formation of antisite defects by gliding dislocations in sphalerite-structure crystals

Conditions are discussed under which an interstitial atom absorbed in the core of a gliding 60° dislocation belonging to the glide set can be transformed into an antisite defect. The mechanism considered may be responsible for an increase in the concentration of As_Ga defects observed in GaAs single crystals after their plastic deformation.     

On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.     

The influence of intrisic defects on the degradation and luminescence of GaAs and other III–V compounds

A significant contribution to the degradation of GaAs-based lasers and light-emitting diodes arises from the formation of so-called dark line defects. It is shown that these defects are accumulations of non-radiative recombination centres around dislocations. The centres are identified as As vacancies, which are emitted by climbing dislocations, concomitantly with the absorption of Ga interstitials. From scanning deep-level transient spectroscopy observations it is concluded that the so-called DX centres are Ga interstitials. The driving force for dislocation climb and thus for dark-line-defect formation is a supersaturation of Ga interstitials originating from the growth of the GaAs crystals under Ga-rich conditions as a consequence of the high volatility of As. Phenomena in other III–V compound semiconductors related to the formation of dark line defects in GaAs are also discussed.     

Evidence for two energy levels associated with EL2 trap in GaAs

By photocapacitance technique, applied to n-type LEC-grown GaAs, two energy levels:E _v +0.45 eV andE _c –0.75 eV are identified, for the first time, as being associated with the EL2 trap. As follows from the analysis of photo-EPR results on highly resistive GaAs crystals, the same energy levels can be attributed to the arsenic antisite defect, As_GA. In view of these findings, it is argued that the occupied EL2 level corresponds to the neutral charge state of As_Ga defect.     

Double anion antisite in GaAs - the simplest member of EL2 family?

Properties of an aggregate composed of two nearest-neighbour As_Ga defects are examined. Such an aggregate behaves like a dimer in which the two constituents are weakly coupled giving rise to a double near-degeneracy of electronic states of the system. The system is unstable against the Jahn-Teller (J-T) distortion that couples pairs of nearly degenerate states. Usually the distortion is stabilized by localization of a single electron, or a pair of electrons, at one of the two As_Ga defects. If one of the two electrons is excited into theT ₂ resonant state of individual As_Ga then the vibronic coupling can be strong, and the resulting J-T effect can give rise to a metastable behaviour of the system. It is argued that the (As_Ga)₂ aggregate is the best candidate for EL2 centre in GaAs crystals.     

Using positron 2D-ACAR as a probe of point defects in GaAs: The As vacancy as a case study

Two-Dimensional Angular Correlation of positron Annihilation Radiation (2D-ACAR) experiments have been performed on n-type GaAs. By combining these results with those from positron lifetime experiments, the momentum distribution of the arsenic vacancy in its neutral (V _aAs ⁰ ) and negative (V _As ^– ) charge states have been extracted. These distributions were all normalized to the respective positron lifetime that characterizes them. The first thing to be noticed is that the momentum distributions of the vacancies, as seen by the positron, are fairly isotropic and structureless. The distribution forV _As ⁰ is more peaked than that ofV _As ^– while the latter is more intense in the large momentum regions of the spectra. From this, it can be inferred that VA. has a smaller open volume thanV _As ⁰ A closer look at the momentum distribution of the vacancies reveals that they are not entirely isotropic, but, in fact, have a bulk-like component. Finally, the experimental results for bulk GaAs andV _As ^– compare well in a qualitative manner with the momentum distributions that result from an ab-initio molecular dynamics calculation.     

Tunneling from dislocation cores in silicon Schottky diodes

Selfquenching of the photocapacitance and of the reverse photocurrent in Schottky diodes made on dislocatedn-type silicon was discovered. A phenomenological model explaining this, rather unexpected, phenomenon is proposed. The model requires an introduction of a new mechanism of diode conductance via dislocation lines. Crucial for this mechanism is the possibility of electron tunneling from dislocation to the conduction band.     

Si DX centers in GaAs at large hydrostatic pressures

A number of experimental and theoretical studies indicate that DX centers in GaAs, its alloys and other III–V semiconductors have negative U properties. Using far infrared localized vibrational mode (LVM) spectroscopy of Si donors in GaAs under large hydrostatic pressure in a diamond anvil cell we have discovered an LVM of the Si DX center. From the ratio of the LVM absorption lines of Si_Ga and Si_DX and the compensation in our GaAs samples, we show unambiguously that two electrons are trapped when the ionized shallow Si donors transform into negatively charged DX centers, in full agreement with the negative U model.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

Outside dislocations generated from phosphorus implanted silicon layers

The growth, movement and nature of outside dislocation, which propagate from heavily phosphorus (>10¹⁵ ions/cm²) implanted (111), (100), and (110) silicon layers into unimplanted outside regions by a compressive strain induced during 1100° C wet O₂ annealing, are investigated using transmission electron microscopy and x-ray diffraction topography. Outside dislocations are formed, mainly on (111) planes., by the glide motion of dislocation networks formed in implanted layers during early annealing. This results in dislocations extending into the unimplanted areas to different degrees, in the order of, from the largest to smallest, (111), (110), and (100) wafers. In (110) wafers, the [001] oriented dislocations in the implanted regions rise to the surface at the implant and unimplant boundary. On the other hand, the [110] dislocations penetrate into the unimplanted region. Two sets of orthogonal 〈110〉 oriented dislocations generated in (100) implanted wafers behave in the same manner as the [001] dislocations in (110) wafers. Some sources of the compressive strain related to the generation of these dislocations are discussed.     

A study of deformation-produced deep levels inn-GaAs using deep level transient capacitance spectroscopy

Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undopedn-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E _c −0.65eV andE _c −0.74eV) and one grown-in hole trap level (E _v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E _c −∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.     

Laser melting of GaAs covered with thin metal layers

GaAs melting simulations with a pulsed ruby laser are reported. The presence of a thin metal layer deposited on the GaAs surface gives rise to a reduction in the melting threshold and to an increase of melted depths when compared with nude GaAs surfaces. Melting thresholds around 0.3 J/cm² for nude GaAs surface and slightly below 0.25 J/cm² for GaAs covered with a 120 Å tin layer are predicted in reasonable agreement with experimental results.     

Studies on excimer laser doping of GaAs using sulphur adsorbate as dopant source

Excimer laser doping of GaAs using sulphur adsorbate as a dopant source is demonstrated. Box-like n-type layers of depths of about 100 nm with carrier concentration as high as (23)×10¹⁹ cm^–3 are formed. Passivation of GaAs using a (NH₄)₂S_x solution for 40 min followed by sublimation of the excess sulphur atoms in high vacuum result in an effective dopant for controllable n-type doping. The samples are irradiated using a KrF excimer laser in a N₂ gaseous environment. Secondary ion mass spectrometry (SIMS) measurements show that sulphur is successfully incorporated in the GaAs. The sheet resistance is controlled by adjusting the laser energy fluence and number of laser pulses. Rutherford backscattering spectrometry with channeling (RBS/C) alignment measurement indicates that lattice damage is undetectable for N₂ gas pressures of 760 Torr.     

Two groups of misfit dislocations in GaAs on Si

High-resolution cross-sectional and conventional plan-view transmission electron microscope observations have been carried out for molecular beam epitaxially grown GaAs films on vicinal Si (001) before and after annealing as a function of film thicknesses and observation directions between two orthogonal 110 directions. Two groups of misfit dislocations are characterized at the interface regions between GaAs and Si by analyzing whether their extra half planes exist in the film or the substrate side. Group I misfit dislocations due to stress caused by a lattice misfit between GaAs and Si consist of partial dislocations and 60° and 90° complete dislocations in an as-grown state. With an increase in the film thickness, partial dislocations decrease and complete dislocations increase. After annealing, partial dislocations almost completely disappear and 90° perfect dislocations are predominantly observed. Group II misfit dislocations due to thermal-expansion misfit-induced stress are all 60°-type complete dislocations regardless of film thicknesses and annealing treatment.On leave from Central Research Laboratory, Hitachi, Ltd., Tokyo 185, Japan     

EL2 deep level in sub-bandgap surface photovoltage spectra in GaAs bulk crystals

Experimentally observed surface-photovoltage-method (SPV) spectra in the subbandgap energy range are presented for a real (100)GaAs surface, treated with preepitaxial procedures. Conductive, n-type GaAs and semi-insulating GaAs are studied. It is shown that SPV spectra are formed as a result of the simultaneous action of both surface states and deep bulk levels. The spectral shape of the surface-state photoionization cross-section is qualitatively determined. The influence of the deep bulk levels on the SPV spectra is explained, and the photoionization cross-section for both Cr and EL2 levels is qualitatively determined.     

Compensation in GaAs crystals due to anti-structure disorder

Complete equilibrium of native point defects in a GaAs crystal being in contact with the liquid phase (melt) is considered. Equilibrium relations for the concentrations of antisite defects, Ga_As and As_Ga, in dependence on the melt composition are derived. It is argued that the As_Ga defect is a double donor, the lower energy level of which corresponds to EL2, while the Ga_As is a double acceptor that can be identified with residual acceptor having the levels at 78 meV and 200 meV above the valence band, which was discovered by Elliot et al. It is shown that the presence of antisite defects together with an excess of background shallow acceptors leads, under reasonable assumptions, to a nearly intrinsic behaviour of LEC-grown GaAs, if the As atom fraction in the melt ranges from 0.471 to 0.535, in accordance with observations of Holmes et al.     

Optical properties and origin of infrared light scattering centers in undoped semi-insulating GaAs crystals

The wavelength dependence and polarization characteristics of the infrared light scattered from an undoped GaAs crystal were investigated in the 90° angle infrared light scattering configuration. The scattering is Rayleigh scattering from scatterers which are always associated with the dislocations, and they are classified into three types,S, L _A , andL _G scatterers, according to their polarization characteristics. TheS, L _A , andL _G -scatterers are thought to be small As clusters, large As precipitates and large Ga precipitates, respectively.     

Investigations of As-antisite-related defects in GaAs

Optically Detected Magnetic Resonance (ODMR) is a powerful tool to study paramagnetic defects in semiconductors. As an example for the successful application of various methods based on ODMR, investigations of As antisite-related defects in GaAs are presented. Information about defect properties such as their microscopic structure, their metastability and thermal stability can be obtained by ODMR which was measured via the Magnetic Circular Dichroism of the optical Absorption (MCDA).Low temperature irradiation of GaAs (4.2 K) with 2 MeV electrons produces the Ga vacancy and some new As antisite-related defects. Annealing steps were investigated at 77 K and above. At 77 K the isolated As antisite defect is detected if semi-insulating (si) GaAs was irradiated. Between 200 K and 300 K the Ga vacancy decays. Its decay is correlated to the formation of an anti-structure pair. A second annealing step was found at about 520 K. There the anti-structure pair decays. EL2 is formed at that temperature if si material was irradiated, but this EL2 formation is not correlated with the anti-structure pair decay. We performed also magneto-optical measurements to investigate the metastability properties of the three As antisite-related defects. They all show metastability.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

An extended read model for grain boundaries in GaAs

The space charging properties of grain boundaries in GaAs are discussed using an extended Read dislocation model. Model calculations for medium to high angle grain boundaries show: (1) the core-site occupational probability for a dislocation at the grain boundary is at least an order of magnitude lower than would be expected on the basis of simple Read theory; (2) due to the strong core-core interaction of the dislocations, the depletion width W decreases with an increase in tilt angle θ: and (3) W is approximately independent of θ in highly doped (N_D ? 10₁₇/cm³) material. Comparisons between model predictions and experimentally determined depletion widths of grain boundaries in GaAs are presented.     

Positron lifetime and 2D-ACAR studies of divacancies in Si

We have measured positron lifetime and Two Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) distributions of Floating-Zone grown (FZ) Si specimens containing divacancies (V₂) with the definite charge states, V ₂ ⁰ , V ₂ ^–1 or V ₂ ^–2 from room temperature to about 10 K. These charge states are accomplished by an appropriate combination of dopant species, their concentration and irradiation doses of 15 MeV electrons. with reference to the currently accepted ionization level of divacancies. The positron lifetime of the negatively charged divacancy increases with temperature, while that of the neutral divacancy shows little change with temperature. The positron trapping rate, obtained from lifetime and 2D-ACAR measurements, increases markedly with decreasing temperature. This is found not only for the negative divacancies but also for the neutral divacancy. We need a model which explains this temperature dependence. The 2D-ACAR distribution from positrons trapped at divacancies shows nearly the same distribution for the different charge states, which differs considerably from the case of As vacancies in GaAs studied by Ambigapathy et al. We have observed a small but definite anisotropy in the distribution of trapped positrons in V ₂ ^– using a specimen containing oriented divacancies.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

X-ray studies of dislocations in multi-layer Cu films

Vacuum-prepared multi-layer Cu films have been studied by x-ray diffraction to detect the averaged dislocation density and distribution. There are very few stacking faults and a very small degree of texture in the films.