Photoluminescence linewidth broadening due to alloy/thickness fluctuation of CdxZn1 − xSe/ZnSe triple quantum wells

Photoluminescence (PL) linewidth broadening of Cd_xZn_{1 − x}Se/ZnSe triple quantum wells, grown on GaAs substrates by molecular beam epitaxy (MBE), has been investigated. Various quantum well (QW) samples have been prepared with different QW thickness and composition (Cd-composition). Measured and calculated PL linewidth are compared. Both composition and thickness fluctuations are considered for the calculation with the parameters such as the volume of exciton, nominal thickness and composition of QWs. Surface roughness measured by atomic force microscopy (AFM) is used to estimate the interface roughness. Results show that when Cd-composition increases additional linewidth broadening due to Zn/Cd interdiffusion is enhanced.     

Interface-related effects on confined excitons in GaAs/AlxGa1−xAs single quantum wells

Confined excitons in non-abrupt GaAs/Al_xGa_1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al_0.3Ga_0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.     

Exciton linewidth due to scattering from free carriers in semiconducting quantum well structures

The contribution to the exciton linewidth in semiconducting quantum well structures due to the scattering of excitons by free carriers is calculated. It is found that this contribution becomes very important in limiting the exciton linewidth when a high density of free carriers is present or at low temperatures where the scattering of the excitons by optical and acoustic phonons is reduced. This contribution to the linewidth in quantum well structures is found to increase with the free carrier concentration and to extremely broaden and exciton peak at high carrier concentrations. At lower carrier concentrations, where the carriers behave as a nondegenerate gas of particles, the contribution to the exciton linewidth due to scattering by free carriers increases with temperature.     

CdSe/CdZnSe超晶格的激子光学性质的研究

用分子束外延法在GaAs衬底上生长了CdSe/Cd0.65Zn0.35Se超晶格结构。利用X射线衍射（XRD）、77K下变密度激发的光致发光光谱和变温度光致发光光谱研究了CdSe/CdZnSe超晶格结构和激光复合特性，在该材料中观测到激子－激子散射发射峰，变密度激发光致发光光谱和谱温度光致发光光谱证实了这一现象，激子发射峰的线宽随着温度的升高而展宽，低温时发光峰的宽度主要是由合金组分和阱垒起伏引起的，没温时激子线宽展宽是由于激子与纵光学声子和离化的施主杂质间的散射作用引起的，光致发光的强度随着温度的升高而降低，这主要是由激子的热离化造成的，也就是说，热激发使得电子或空穴由阱中跃迁至垒上。     

Rayleigh scattering of light by two-dimensional electrons in a high magnetic field

Resonance Rayleigh scattering of light by a two-dimensional electron system in the ultraquantum limit is investigated. The scattering process under study involves electronic states belonging to the two spin sublevels of the zero Landau level. It is shown that the main contribution to resonance Rayleigh scattering originates from the fluctuations of the random potential in the quantum well hosting the two-dimensional system.     

ZnCdSe/ZnSe多量子阱的生长和激子光学性质的研究

用分子束外延在GaAs衬底上生长了ZnCdSe/ZnSe多量子阱结构.利用X射线衍射(XRD)、变温度PL光谱和ps发光衰减等研究了ZnCdSe/ZnSe多量子阱结构和激子复合特性.由变温PL光谱讨论了随温度升高辐射线宽展宽和辐射复合效率降低的机理.     

Exciton fine structure splitting of single InGaAs self-assembled quantum dots

We show how the resonant absorption of the ground state neutral exciton confined in a single InGaAs self-assembled quantum dot can be directly observed in an optical transmission experiment. A spectrum of the differential transmitted intensity is obtained by sweeping the exciton energy into resonance with laser photons exploiting the voltage induced Stark-shift. We describe the details of this experimental technique and some example results which exploit the 1 μeV spectral resolution. In addition to the fine structure splitting of the neutral exciton and an upper bound on the homogeneous linewidth at 4.2 K, we also determine the transition electric dipole moment.     

Coherent response of a semiconductor microcavity in the strong coupling regime

We have studied the coherent dynamics of a semiconductor microcavity by means of interferometric correlation measurements with subpicosecond time resolution in a backscattering geometry. Evidence is brought of the resolution of a homogeneous polariton line in an inhomogeneously broadened exciton system. Surprisingly, photon-like polaritons exhibit an inhomogeneous dephasing. Moreover, we observe an unexpected stationary coherence up to 8 ps for the lower polariton branch close to resonance. All these experimental results are well reproduced within the framework of a linear dispersion theory assuming a coherent superposition of the reflectivity and resonant Rayleigh scattering signals with a well-defined relative phase.     

CdSe/ZnS纳晶中相干电声耦合效应的二维电子光谱研究

Coherent exciton-phonon coupling in CdSe/ZnS nanocrystals have been investigated by temperature-dependent two-dimensional electronic spectroscopy (2DES) measurements. Benefiting from the ability of 2DES to dissect assembles in nanocrystal films, we have clearly identified experimental evidences of coherent coupling between exciton and phonon in CdSe/ZnS nanocrystals. In time domain, 2DES signals of excitonic transitions beat at a frequency resonant to a longitudinal optical phonon mode; in energy domain, phonon side bands are distinct at both Stokes and anti-Stokes sides. When temperature increases, phonon-induced exciton dephasing is observed with dramatic broadening of homogeneous linewidth. The results suggest exciton-phonon coupling is essential in elucidating the quantum dynamics of excitonic transitions in semiconductor nanocrystals.     

Four-wave mixing Rayleigh scattering spectroscopy of binary solutions

The concentration dynamics of the scattering spectral width in a number of binary solutions has been studied by four-wave mixing spectroscopy near the Rayleigh resonance. It is noted that, according to the classical concepts, a variation in the correlation length of fluctuations of the relative concentration of molecules in a solution plays a key role in the change in the spectral width. Some liquids exhibit nonmonotonic (hysteretic) concentration dependences of the Rayleigh linewidth.     

Temperature and density dependence of exciton lifetimes in GaAs/AlGaAs multiple quantum wells

The photoluminescence linewidths and excition lifetimes of free excitons in GaAs/AlGaAs multiple quantum wells were systematically investigated as a function of temperature, quantum well width, and carrier density. The experimental results showed that the exciton decay processes were strongly related to the linewidth of the exciton and the exciton binding energy.     

Negatively charged quantum well polaritons in a GaAs/AlAs microcavity: An analog of atoms in a cavity

The negatively charged exciton (X-) is observed to strongly couple with the microcavity- (MC-)confined photons in a GaAs quantum well containing a two-dimensional electron gas with 0相似文献   

基于磁圆二向色谱的单层MoS_2激子能量和线宽温度依赖特性

以二硫化钼(MoS_2)为代表的过渡金属硫属化物属于二维层状材料,样品可以薄至单层.单层MoS_2是一种直接带隙半导体,在纳米逻辑器件、高速光电探测、纳米激光等领域具有广阔的应用前景.在实际应用中,温度是影响半导体材料能带结构和性质的主要因素之一.因此研究单层二维材料能带的温度依赖特性对理解其物理机理以及开展器件应用具有重要的意义.目前,在广泛采用的测量单层MoS_2反射谱的研究中,激子峰往往叠加在一个很强的光谱背底上,难以准确分辨激子的峰位和线宽.基于自行搭建的显微磁圆二向色谱系统,研究了单层MoS_2在65—300 K温度范围内的反射谱和磁圆二向色谱,结果表明磁圆二向色谱在研究单层材料激子能量和线宽方面具有明显的优势.通过分析变温的磁圆二向色谱,得到了不同温度下的A,B激子的跃迁能量和线宽.通过对激子能量和线宽的温度依赖关系进行拟合,进一步讨论了声子散射对激子线宽的影响.     

Resonant light scattering by a gradient quantum well

Resonant scattering of monochromatic light by a quantum well with the frequency of its excitonic resonance varying along a certain direction in the plane of the well is studied experimentally and theoretically. It is shown that the simplest model of a thin inhomogeneous layer that yields an exact solution of the direct and inverse scattering problems allows one to successfully describe the experimental observation of resonant scattering by a GaAs/AlGaAs quantum well with the frequency of the exciton resonance linearly varying in the plane of the well.     

Resonant Raman scattering spectra in a ZnCdSe/ZnSe structure with a quantum well and open nanowires

Resonance Raman scattering (RS) spectra of a ZnCdSe/ZnSe sample containing a single quantum well and quantum well-based open nanowires were studied at T=300 K. The longitudinal optical (LO) phonons involved in the formation of the observed spectra of the quantum-well and nanowire regions differ noticeably in energy. The LO phonon energies in the structures under study were calculated taking into account the compositional effect (doping of Cd into ZnSe) and biaxial strain. When excited in the exciton resonance region, RS is shown to occur via free (extended) excitonic states with the involvement of LO phonons of the ZnCdSe strained layer with final wave vectors near the Brillouin zone center. When excited below the excitonic resonance in the ZnCdSe layer, resonance scattering via localized exciton states provides a noticeable contribution to the observed RS lines. Because of the finite size of a localized state, phonons with large wave vectors are involved in these scattering processes. The RS lines produced under excitation in the excitonic region of the thick barrier layers are due to scattering from the ZnSe barrier phonons.     

Backscattering of light by a finite two-dimensional crystal plate in the region of exciton resonance: Antispecular reflection

It is shown that scattering of a plane monochromatic wave by a finite two-dimensional crystal (quantum well or Langmuir-Blodgett film) in the region of exciton resonance shows, along with the peak of specular reflection, a peak of comparable magnitude corresponding to backward scattering propagating toward the incident beam (antispecular reflection). The effect is related to reflection of the exciton by the boundary of the two-dimensional crystal. The solution of the scattering problem for a simple model system with a Frenkel exciton, demonstrating this phenomenon, is given.     

Subnatural linewidth single photons from a quantum dot

The observation of quantum-dot resonance fluorescence enabled a new solid-state approach to generating single photons with a bandwidth approaching the natural linewidth of a quantum-dot transition. Here, we operate in the small Rabi frequency limit of resonance fluorescence--the Heitler regime--to generate subnatural linewidth and high-coherence quantum light from a single quantum dot. The measured single-photon coherence is 30 times longer than the lifetime of the quantum-dot transition, and the single photons exhibit a linewidth which is inherited from the excitation laser. In contrast, intensity-correlation measurements reveal that this photon source maintains a high degree of antibunching behavior on the order of the transition lifetime with vanishing two-photon scattering probability. Generating decoherence-free phase-locked single photons from multiple quantum systems will be feasible with our approach.     

A Raman study of the structural properties of YBa2(Cu1 − xFex)3Oy

The effects of Fe-substitution of YBa₂Cu₃O_y have been investigated by means of Raman scattering, X-ray diffraction, resistivity and susceptibility measurements. A series of samples of YBa₂(Cu_{1 − x}Fe_x)₃O_y with different dopant concentration (0 x 0.15) has been prepared in two batches, the second set having undergone twice the heat and mechanical treatment used to produce the first batch. Considerable improvement in the superconducting transition temperature, T_c, is obtained upon reprocessing. A phase transformation from orthorhombic to tetragonal symmetry is observed for x=0.05 from the X-ray measurements in agreement with previous work. Using a micro-Raman technique, all five A_g vibrational modes have been measured and their dependence on Fe-concentration is analyzed. There are indications that iron substitutes for copper at both sites and that the structure is a mixture of orthorhombic and tetragonal microdomains for all x.     

Spin fluctuations in weakly itinerant ferromagnets Y(Co1−xAlx)2

The nuclear spin-lattice relaxation rate, 1/T₁, has been measured in weak itinerant ferromagnets Y(Co_1−xAl_x)₂. The temperature and magnetic field dependence of 1/T₁T has been found to be well described by the self-consistent renormalization (SCR) theory of spin fluctuations. The parameters characterizing spin fluctuations in this system were estimated from NMR and magnetic measurements. The temperature dependence of susceptibility calculated from these parameters well reproduces the experimental results.