首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 265 毫秒
1.
采用不同的真空热梯度升华条件,获得了不同纯度的乙酰丙酮酸二(2-苯基吡啶)铱Ir(ppy)2(acac)。以不同纯度Ir(ppy)2(acac)为客体材料,制备了结构为ITO:MoO3/CBP/CBP:Ir(ppy)2(acac)/TPBi/LiF:Al的有机发光二极管(OLEDs),其中CBP和TPBi分别是4,4'-二(9-咔唑)联苯和1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯。评价了不同纯度磷光铱配合物制备的器件的电致发光性能,探索了磷光铱配合物纯度对器件性能的影响。结果表明:Ir(ppy)2(acac)升华后可以提高器件的稳定性,纯度高的材料可以在较低的掺杂浓度下获得较高的发光效率。  相似文献   

2.
空穴传输层对有机电致发光器件性能的影响   总被引:3,自引:1,他引:2  
袁桃利  张方辉  张微  黄晋 《发光学报》2013,34(11):1457-1461
制备了结构为ITO/MoO3(40 nm)/空穴传输层/CBP:Ir(ppy)2acac(8%)(30 nm)/BCP(10 nm)/Alq3(40 nm)/LiF(1 nm)/Al(100 nm)的器件,其中Ir(ppy)2acac为绿色磷光染料,空穴传输层分别为TAPC(50 nm)、TAPC(40 nm)/TCTA(10 nm)、NPB(50 nm)、NPB(40 nm)/TCTA(10 nm)。通过使用4种不同结构的空穴传输层,对器件的发光性能进行了研究。结果表明,空穴传输层对器件的发光性能有较大影响。在电压为6 V、电流密度为2 mA/cm2的条件下,4种结构的器件的电流效率分别为52.5,67.8,35.6,56.6 cd/A。其原因是TAPC/TCTA及NPB/TCTA能级结构更有利于空穴对发光层的注入而且TAPC拥有较高的空穴迁移率;另外,TAPC及TCTA拥有较高的LUMO和三线态能量,可以有效地将电子和三线态激子束缚在发光层内,增加绿光染料的复合发光几率。所制备的器件均表现出良好的色坐标稳定性。  相似文献   

3.
唐晓庆  于军胜  李璐  王军  蒋亚东 《物理学报》2008,57(10):6620-6626
通过对一种新型贵金属铱的配合物磷光材料(pbi)2Ir(acac)与咔唑共聚物进行物理掺杂, 制备了结构为indium-tin oxide(ITO)/poly(N-vinylcarbazole)(PVK): (pbi)2Ir(acac)(x)/2,9-dimethyl-4,7-diphenyl-1,10-phenan throline(BCP)(20nm)/8-Hydroxyquinoline aluminum(Alq3)(10nm)/Mg:Ag的聚合物电致磷光器件,研究了磷光聚合物掺杂体系在低掺杂浓度时(0.1%和0.5%(质量百分数,全文同))的光致发光(PL)和电致发光(EL)特性. 结果表明, 该掺杂体系的PL光谱和EL光谱中均同时存在主体材料PVK与磷光客体(pbi)2Ir(acac)的发光光谱, 但主客体的发射强度不同,推测该掺杂体系在电致发光条件下, 同时存在主体材料到客体的不完全的能量传递和载流子直接俘获过程. 磷光掺杂浓度为0.1%的器件在19V电压下实现了白光发射, 色坐标为(0.32, 0.38), 掺杂浓度为0.5%的器件在20.6V电压下的最大发光亮度为11827 cd·m-2, 而在13.4V电压下的最大流明效率为4.13 cd·A-1. 关键词: 有机电致发光器件 铱配合物磷光 聚合物掺杂  相似文献   

4.
孟维欣  郝玉英  许慧侠  王华  刘旭光  许并社 《物理学报》2011,60(9):98102-098102
利用一种新型有机金属配合物二(2-(4-三氟甲基-2-羟基苯基)苯并噻唑锌(Zn(4-TfmBTZ)2),基于NPB/Zn(4-TfmBTZ)2界面电致激基复合物,制备了一系列异质结量子阱结构有机电致白光器件.结果表明,量子阱结构可以有效提高界面电致激基复合物的发光效率以及器件的显色指数和色度稳定性.得出器件ITO/NPB (60 nm)/Zn(4-TfmBTZ)2(3.0 nm)/NPB (4.0 nm)/Zn(4-TfmBTZ)关键词: 二(2-(4-三氟甲基-2-羟基苯基)苯并噻唑锌 电致激基复合物 量子阱 白光  相似文献   

5.
激子形成区域随电场变化的移动会使得有机电致发光器件(OLEDs)的效率和色度发生改变,从而影响器件的性能。文章首先制备了两种OLED器件,器件1为ITO/PEDOT∶PSS/PVK∶Ir(ppy)3∶DCJTB (100∶2∶1 wt)/BCP(10 nm)/Alq3(15 nm)/Al,器件2为ITO/PEDOT∶PSS/PVK∶Ir(ppy)3(100∶2 wt)/BCP(10 nm)/Alq3(15 nm)/Al,研究了电场强度对单层多掺杂结构器件激子形成的影响。实验发现在多掺杂发光层中,随着电压的增加,Ir(ppy)3,PVK和DCJTB的发光均增强,PVK和DCJTB发光增强更快。对其发光机制进行分析,认为较高电场下,载流子获得较高能量,更容易形成高能量激子,产生宽禁带材料PVK的发光;另一方面,从能级结构分析DCJTB的带隙较窄, 俘获更多的载流子发光更强。同时,在器件的电致发光(EL)光谱发现在460 nm处一新的发射峰, 发光随着电压的增大相对减弱。为了研究460 nm发光的来源,制备了器件:ITO/PEDOT∶PSS/PVK∶BCP∶Ir(ppy)3(xy∶2 wt)/Alq3(15 nm)/Al, 改变x, y的比值研究发现,460 nm处的发光依然存在,推测此发光峰应与PVK及BCP之间有关。  相似文献   

6.
基于铱配合物材料的高效高稳定性有机发光二极管   总被引:1,自引:0,他引:1       下载免费PDF全文
使用基于重金属Ir的新磷光材料(tpbi)2Ir(acac),制备了多层结构有机发光二极管器件: ITO/CuPc (40 nm)/α-NPD (45 nm)/CBP: (tpbi)2Ir(acac) (3%, 30nm)/BCP(20 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (100 nm).测试了材料的寿命、光谱吸收性质和器件的I-V-L特性.器件在低电压下电流符合热发射注入模型,高电压下I-V呈线形关系.不同偏压下器件发光光谱稳定,多峰拟合结果表明器件光谱由α-NPD发光峰(450 nm),(tpbi)2Ir(acac)主发光峰(518 nm)和肩峰(543 nm)构成.驱动电压为6 V时,器件效率达到最大12.1 lm/W,此时亮度为136 cd/m2,器件亮度最大为13500 cd/m2,此时效率为0.584 lm/W. 关键词: 有机发光二极管 磷光 效率 I-V-L特性')" href="#">I-V-L特性 光谱  相似文献   

7.
使用R-4B作为磷光掺杂剂,CBP为主体,制作以BCP调节载流子复合的红色磷光器件,器件结构ITO/MoO3(30)/NPB(40)/TCTA(10)/CBP:R-4B(6%)(15)/BCP(x)/CBP:R-4B(6%)(15)/BCP(10)/Alq3(40)/LiF/Al, 其中x为BCP的厚度,对五种不同厚度的器件和一个对MoO3优化好且不加BCP的对比器件,来研究它们的发光性能和效率。实验表明:对于面积为1.18 cm2的器件,BCP为4 nm, MoO3在30 nm时,它的性能达到了最佳,启亮电压为4 V,最大效率为18.9 cd·A-1,其对应的EL主峰位于612 nm, 色坐标为(0.643,0.353), 得到了稳定高效的红色磷光OLED器件。  相似文献   

8.
利用电子传输性能良好的苯并噻唑螯合锌(Zn(BTZ)2)作为蓝光层,通过设计不同类型的空穴传输层并试验不同厚度的发光层后,制作了一种最佳厚度的双发光层白色电致发光器件:氧化铟锡(ITO)/N-N′-双(3-甲基苯基)-N-N′-二苯基-1-1′-二苯基-4-4′-二胺(TPD)∶N,N′-二(1-萘基)-N,N′-二苯基-1,1′-联苯-4-4′-二胺(NPB)(1∶0.0 关键词: 厚度 空穴传输层 白光 载流子  相似文献   

9.
以铱配合物红色磷光体Ir(piq)2(acac)为掺杂剂,制备了基于BAlq材料的红色电致磷光器件,其结构为ITO/NPB(30nm)/Ir(piq)2(acac):BAlq(25nm)/BCP(13nm)/Alq3(35nm)/LiF(1nm)/Al(1000nm),当掺杂浓度为8%的时候,器件发光的色坐标为(x=0.67,y=0.32),基本满足了全色显示对红色发光的要求。在电压为16V时,器件达到最高亮度9380cd/m2。在电流密度为5.45mA/cm2时,外量子效率达到最大5.7%。由于磷光体Ir(piq)2(acac)的磷光寿命较短,所以器件在高电流密度下,仍然保持较高的外量子效率。电流密度为100mA/cm2时,外量子效率仍然维持在4.7%。进一步研究表明在器件中短程的Dexter能量传递以及红光染料对空穴的直接捕获两种机制同时存在。  相似文献   

10.
制备了一种结构为ITO/NPB/NPB:Ir(piq)2(acac)/CBP:TBPe/BAlq:rubrene/BAlq/Alq3/Mg:Ag的白色磷光有机电致发光器件.其中空穴传输型主体NPB掺杂磷光染料Ir(piq)2(acac)作为红色发光层,双载流子传输型主体4,4′-N,N′-dicarbazole-biphenyl (CBP)掺杂TBPe作为蓝色发光层,电子传输型主体材料BAlq掺杂rubrene作为绿色发光层.以上发光层夹于 关键词: 电致发光 磷光染料 异质结 白光  相似文献   

11.
《Current Applied Physics》2010,10(5):1326-1330
This paper describes the white organic light-emitting diodes (WOLEDs) made from a benzothiazole derivative, N-(4-(benzo[d]thiazol-2-yl)phenyl)-N-phenylnaphthalen-1-amine (BPNA). The bright yellowish-white emission was obtained from a non-doped triple-layer device: ITO/NPB (40 nm)/BPNA (50 nm)/Alq3 (40 nm)/LiF/Al. The Commission Internationale de L’Eclairage (CIE) coordinates of the device were (0.24, 0.36) at 10 V. The maximum brightness of the device was 9225 cd/m2 at 14.4 V. A current efficiency of 3.08 cd/A, a power efficiency of 1.21 lm/W and an external quantum efficiency of 1.18% at a driving current density of 20 mA/cm2 were achieved. WOLED with a DCJTB-doped structure of ITO/TcTa/BPNA/BPNA: DCJTB (0.5%)/BPNA/BCP/Alq3/LiF/Al was fabricated in comparison with the non-doped device. The device emitted bright white light with the CIE coordinates of (0.33, 0.29) at 10 V and a maximum luminance of 7723 cd/m2 at 14.8 V.  相似文献   

12.
In this paper, a new white organic light-emitting device (WOLED) with multilayer structure has been fabricated. The structure of devices is ITO/N, N-bis-(1-naphthyl)-N, N-diphenyl-1, 1′-biphenyl-4, 4′-diamine (NPB) (40 nm)/NPB: QAD (1%): DCJTB (1%) (10 nm) /DPVBi (10 nm) /2, 9-dimethyl, 4, 7-diphenyl, 1, 10-phenanthroline (BCP) (d nm)/tris-(8-hydroxyquinoline) aluminium (Alq3)(50-d nm)/LiF (1 nm)/Al (200 nm). In our devices, a red dye 4-(dicyanomethylene)-2-t-butyl-6 (1, 1, 7, 7-tetramethyl julolidyl-9-enyl)-4H-pyran (DCJTB) and a green dye quinacridone (QAD) were co-doped into NPB. The device with 8 nm BCP shows maximum luminance of 12 852 cd/m2 at 20 V. The current efficiency and power efficiency reach 9.37 cd/A at 9 V and 3.60 lm/W at 8 V, respectively. The thickness of the blocking layer permit the tuning of the device spectrum to achieve a balanced white emission with Commission International de’Eclairage (CIE) chromaticity coordinates of (0.33,0.33). The CIE coordinates of device change from (0.3278, 0.3043) at 5 V to (0.3251, 0.2967) at 20 V that are well in the white region, which is largely insensitive to the applied bias.  相似文献   

13.
Efficient white organic light-emitting diodes (WOLEDs) are fabricated with a thin layer of 9,10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene as the source of white emission. A device with the structure of ITO/NPB (70 nm)/ADN: 0.5% Rubrene (30 nm)/Alq3 (50 nm)/MgAg shows a maximum current efficiency of 3.7 cd/A, with the CIE coordinates of x=0.33, y=0.43. The EL spectrum of the devices and the CIE coordinates remains almost the same when the voltage is increased from 10 to 15 V and the current efficiency remains quite stable with the current density increased from 20 to 250 mA/cm2.  相似文献   

14.
以磷光染料Ir(piq)2(acac)作为发光掺杂剂,掺入空穴传输性主体材料NPB中得到红色发光层,荧光材料TBP掺入到主体CBP中作为蓝色发光层,制备了结构为ITO/NPB/NPB:Ir(piq)2(acac)/CBP/CBP:TBPe/BCP/ALq/Mg:Ag的双发光层白色有机电致发光器件.其中ALq3、未掺杂的NPB和CBP及BCP层分别作为电子传输层、空穴传输层和激子阻挡层.实验中通过调节发光层厚度及Ir(piq)2关键词: 磷光 激子阻挡层 有机电致发光  相似文献   

15.
White organic light-emitting devices (WOLEDs) were fabricated with an ultrathin layer of rubrene inserted between NPB and TPBI. With a simple three-layer structure of ITO/NPB(50 nm)/rubrene(0.1 nm)/TPBI(50 nm)/LiF/Al, a white light with CIE coordinates of (0.31, 0.30) were generated. The device gave a maximum luminance efficiency of 2.04 lm/W at 5 V. Furthermore, with a multilayer structure of ITO/m-MTDATA(30 nm)/NPB(20 nm)/rubrene(0.1 nm)/TPBI(40 nm)/Alq3(10 nm)/LiF/Al, the device reached a maximum luminance efficiency of 4.29 lm/W at 4 V and the luminance could exceed 10 000 cd/m2 at 10 V.  相似文献   

16.
A white organic light-emitting device was fabricated with a structure of ITO/PEDOT: PSS (45 nm)/PVK: Nile Red: [Zn4core] (75 nm)/BCP (25 nm)/Al. Without Nile Red green and with Nile Red white emission was achieved. When the concentration of the Nile Red in thin film increased from 0.01 to 0.5 wt%, a white emission achieved. The electroluminescence spectra of the device cover a wide range of visible region with two peaks around 501 and 618 nm. It is noteworthy that a white and pure white OLEDs with an incomplete energy transfer from the green host [Zn4core] to the dopant (Nile Red) was obtained in this work using a single emissive layer relative to the multi layered light emitter ones in white OLED devices. For 0.1 doped device, a maximum luminance efficiency of 2.54 cd/A with CIE coordinates of (x, y = 0.35, 0.37) at 230 mA/cm2 has was achieved.  相似文献   

17.
荧光染料掺杂的高效率、高亮度白色有机电致发光器件   总被引:1,自引:0,他引:1  
张刚  田晓萃  高永慧  常喜  汪津  姜文龙  张希艳 《发光学报》2013,34(12):1603-1606
制备了结构为 ITO/NPB(30 nm)/Rubrene(0.2 nm)/CBP:Bczvbi(8 nm,x%)/Bphen(30 nm)/Cs2CO3:Ag2O(2 nm,20%)/Al(100 nm)的器件。研究了Bczvbi掺杂浓度(x=5,10,15)对白光器件性能的影响。综合利用发光层中主客体之间的能量转移和空穴阻挡层的空穴阻挡特性,得到了高效率、高亮度的白色有机电致发光器件。当Bczvbi的掺杂质量分数为10%时,器件的效率和亮度都为最大。驱动电压为7 V时,最大电流效率为4.61 cd/A;驱动电压为9 V时,最大亮度为21 240 cd/m2。当驱动电压从4 V增加到9 V时,色坐标从(0.36,0.38)变化为(0.27,0.29),均处于白光区域。  相似文献   

18.
Efficient white electroluminescence has been obtained by using an electroluminescent layer comprising of a blue fluorescent bis (2-(2-hydroxyphenyl) benzoxazolate)zinc [Zn(hpb)2] doped with red phosphorescent bis (2-(2′-benzothienyl) pyridinato-N,C3′)iridium(acetylacetonate) [Ir(btp)2acac] molecules. The color coordinates of the white emission spectrum was controlled by optimizing the concentration of red dopant in the blue fluorescent emissive layer. Organic light-emitting diodes were fabricated in the configuration ITO/α-NPD/Zn(hpb)2:0.01 wt%Ir(btp)2acac/BCP/Alq3/LiF/Al. The J-V-L characteristic of the device shows a turn on voltage of 5 V. The electroluminescence (EL) spectra of the device cover a wide range of visible region of the electromagnetic spectrum with three peaks around 450, 485 and 610 nm. A maximum white luminance of 3500 cd/m2 with CIE coordinates of (x, y=0.34, 0.27) at 15 V has been achieved. The maximum current efficiency and power efficiency of the device was 5.2 cd/A and 1.43 lm/W respectively at 11.5 V.  相似文献   

19.
A white light-emitting device has been fabricated with a structure of ITO/m-MTDATA (45 nm)/NPB (10 nm)/DPVBi (8 nm)/DPVBi:DCJTB 0.5% (15 nm)/BPhen (x nm)/Alq3 [(55−x) nm]/LiF (1 nm)/Al, with x=0, 4, and 7. BPhen was used as the hole-blocking layer. This results in a mixture of lights from DPVBi molecules (blue-light) and DCJTB (yellow-light) molecules, producing white light emission. The chromaticity can be readily adjusted by only varying the thickness of the BPhen layer. The CIE coordinates of the device are largely insensitive to the driving voltages. When the thickness of BPhen is 7 nm, the device exhibits peak efficiency of 6.87 cd/A (3.59 lm/W) at the applied voltage of 6 V, the maximum external quantum efficiency ηext=2.07% corresponding to 6.18 cd/A, and the maximum brightness is 18494 cd/m2 at 15 V.  相似文献   

20.
Stable white electroluminescence (EL) has been achieved from organic LED, in which an ultrathin 4-(dicyanomethylene)-2-methyl-6-(p-dimethyl-aminostyryl)-4H-pyran (DCM) dye layer has been inserted in between two 2-methyl-8-hydroxyquinolinolatolithium [LiMeq] emitter layer and by optimizing the position of the DCM dye layer from the α-NPD/LiMeq interface. Electroluminescence spectra, current-voltage-luminescence (I-V-L) characteristics of the devices have been studied by changing the position of the dye layer. As the distance of DCM layer from α-NPD/LiMeq interface is increased, the intensity of host emission enhances rapidly. Introduction of thin layer of DCM in emissive layer increases the turn on voltage. The best Commission International de L’ Eclairage (CIE) coordinates i.e. (0.32, 0.33) were obtained with device structure ITO/α-NPD(30 nm) /LiMeq(10 nm)/DCM(1 nm)/LiMeq(25 nm)/BCP(6 nm)/Alq3(28 nm)/LiF(1 nm)/Al(100 nm). The EL spectrum covers the whole visible spectra range 400-700 nm. The color rendering index (CRI) for our best white light (Device 4) is 47.4. The device shows very good color stability in terms of CIE coordinates with voltages. The maximum luminescence 1240 cd/m−2 has been achieved at 19 V.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号