Dipolar dielectric relaxation in CeO2-YO1,5 solid solutions

The dielectric properties of yttrium oxide-doped cerium oxide solid solutions have been studied by using a.c. techniques. Frequency and temperature respectively range from 10 to 10⁵ Hz and from 70 to 200°C. Both a complex impedance plot (Z″ vs Z′) and a conductance plot (G at fixed frequency vs inverse of temperature T^?1) are shown to be complementary for an accurate determination of the bulk resistance and of the dielectric loss. For the three investigated concentrations of yttrium oxide (m/% YO_1,5:0.001, 0.01 and 0.1), the activation energies for conduction are equal to 0.86, 0.75 and 0.75 eV, while the activation energy for dipole reorientation is found to be concentration independent (0.75 eV; angular frequency preexponential factor: 6.0 × 10¹², 1.43 × 10¹³ and 3.05 × 10¹³ s^?1). Moreover, the dipolar relaxation rates are found to be of the same order of magnitude as that of the migration rate. Interpretation is given on the basis of Wachtman's model and of previous results obtained by Nowick et al. from ITC (ionic thermo-current) investigations. The observed dielectric peak appears to be due to the redistribution of oxyygen vacancies between charged (Y_Ce-V₀) pairs and fixed charged Y_Ce defects.     

Thermal desorption and surface lifetimes of bromine and iodine adsorbed on an ionizer of LaB6

Thermal desorption of bromine and iodine from an ionizer surface made of cold pressed and sintered LaB₆ powder has been studien in the temperature interval 800–1300°C. A new technique, where the extraction field is accelerating only during short intervals, has been developed to monitor separately the neutral desorption of readily ionized elements. The technique has been combined with the modulated beam and the modulated voltage methods for measurements of residence times and ionization efficiencies. It has also been combined with the temperature programmed desorption method used for determination of the Arrhenius parameters of desorption. The following values were obtained for l_? and l₀, the activation energies of ionic and neutral desorption, and for the corresponding pre-exponential factors C and D (D = 4C) for halogens): Bromine: l_? = 3.8 eV, l₀ = 4.3 eV, C = 2.0 × 10¹³ s^?1; Iodine: l_? = 3.4 eV, l₀ = 3.7 eV, C = 1.1 × 10¹³ s^?1. The ionization efficiencies measured at 1100°C, 0.95 for bromine and 0.7 for iodine, correspond well to what is given by the Saha-Langmuie equation using a work function of 2.7 eV. All measurements were performed with the number of adsorbed particles well below 10¹⁷ atoms/m². For higher coverages l_? was found to increase linearly by about 0.15 eV for an adsorption of 10¹⁸ atoms/m².     

Diffusion of 55Fe in Fe2O3 single crystals

The diffusion of ⁵⁵Fe has been measured parallel to the c axis of Fe₂O₃ single crystals at temperatures in the range 708–1303°C and at an oxygen activity of unity. The tracer penetration profiles were determined using sectioning techniques. For temperatures above 900°C the tracer diffusion coefficient is given byD¹(Fe) = 1.6 × 10⁹ exp[?6.0 (eV)/kT] cm² s^?1 and below 900°C by 2.8 × 10^?9 exp[?1.8 (eV)kT]. The high-temperature behaviour is probably characteristic of pure Fe₂O₃, whereas diffusion at lower temperatures may be influenced by impurities. The most likely defects responsible for diffusion of Fe are iron interstitials and, for oxygen, oxygen vacancies, and the observed activation energies are discussed in terms of the properties of these defects. The diffusion data and defect models have been used to predict the rate of growth of Fe₂O₃ and indicate that outward Fe diffusion is the dominant transport process. Previously published data for Fe₂O₃ growth in a variety of experimental situations have been corrected to a single rate constant using a model for multilayer growth. The corrected data are all in good agreement but are approximately two orders of magnitude greater than predicted from diffusion data, which suggests that grain boundary diffusion controls the growth of Fe₂O₃ in practice.     

Fundamental absorption edge of evaporated amorphous WO3 films

The fundamental absorption edge of evaporated WO₃ films is investigated. The optical gap of the virgin film is estimated to be 3.41 eV at room temperature and it decreases with increase of annealing temperature up to 200°C. Annealing at 300°C leads to change in the spectral shape, which is caused by crystallization. For the films annealed at 200°C, temperature coefficient of the optical gap is estimated to be −2×10⁻⁴ eV/K and the slope of Urbach's tail is found to be independent of measuring temperature up to 200°C. With electrolytic coloration, shift of the optical gap toward higher energy is observed. Magnitude of this shift is estimated to be 0.05 eV at the color center concentration of 7.5×10²¹ cm⁻³ when H⁺ electrolyte is used. If Li⁺ electrolyte is used, the magnitude of this shift is about three times larger than in the case of H⁺ electrolyte. This fact is interpreted by a small change in the host matrix structure owing to the injection of proton or Li⁺ during coloration.     

Ionic transport in the lithium nitride bromides,Li6NBr3 and Li1 3N4Br

The ionic and electronic conductivities of the lithium nitride bromides Li₆NBr₃ and Li_{1 3}N₄Br have been studied in the temperature range from 50 to 220°C and 120 to 450°C, respectively. Both compounds are practically pure lithium ion conductors with negligible electronic contribution. Li₆NBr₃ has an ionic conductivity Ω of 2 × 10^-6Ω^-1cm^-1 at 100°C and an activation enthalpy for σT of 0.46 eV. Li_{1 3}N₄Br shows a phase transition at about 230°C. The activation enthalpy for σT is 0.73 eV below and 0.47 eV above this temperature. The conductivities at 150 and 300°C were found to be 3.5 × 10^-6 Ω^-1cm^-1 and 1.4 × 10^-3Ω^-1cm^-1, respectively. The crystal structure is hexagonal at room temperature with $\text{a = 7.415 (1)}\text{A}\text{?}$ and $\text{c = 3.865 (1)}\text{A}\text{?}$.     

Hydrogen-plasma etching of hydrogenated amorphous silicon: a study by a combination of spectroscopic ellipsometry and trap-limited diffusion model

The kinetics of etching hydrogenated amorphous silicon by a hydrogen plasma has been studied by in-situ spectroscopic ellipsometry measurements. The formation of a hydrogen-rich sublayer is clearly emphasized. Its thickness increases from 7 to 27?nm when the temperature during the hydrogen-plasma treatment is raised from 100 to 250°C. This effect is interpreted by solving the differential equation for trap-limited hydrogen diffusion through a mobile surface. By assigning the thickness of this sublayer to the mean diffusion distance of hydrogen we determined values of the effective diffusion coefficient of hydrogen higher than 10^?14?cm²s^?1 with an activation energy of 0.22?eV. The density of hydrogen traps is found to decrease from 7.3 × 10¹⁸ to 4.5 × 10¹⁷?cm^?3 as the temperature of the hydrogen treatment increases from 100 to 250°C with an activation energy of 0.43?eV. This effect is interpreted by a thermal equilibrium involving hydrogen transitions between shallow states and hydrogen-trapping sites.     

克里奇中间体CH2OO与CF3CF=CF2反应的动力学研究

本文使用OH激光诱导荧光方法研究了结构最简单的克里奇中间体CH₂OO和CF₃CF=CF₂的反应动力学. 在压强为10 Torr条件下,测量了温度在283,298,308和318 K的反应速率常数,分别为(1.45±0.14)×10^-13,(1.18±0.11)×10^-13,(1.11±0.08)×10^-13和(1.04±0.08)×10^-13 cm³·molecule^-1·s^-1. 根据阿伦尼乌斯方程,获得该反应的活化能为(-1.66±0.21) kcal/mol. 在6.3∽70 torr压力范围内,未观察到该反应的速率常数存在压力相关.     

Annealing behaviour of arsenic implants in silicon

Abstract

The annealing behaviour of 80 keV room temperature arsenic implants in silicon below the amorphization dose has been studied by comparing the physical profile and the electrical profiles following different isochronal anneals.

It is shown that the electrically active fraction, which is about 0.4 after 30 min annealing at 600°C, increases continuously until 100% electrical activation of the arsenic ions is reached at about 900°C.

The activation energy for the annealing process has been found equal to 0.4 eV. A tentative interpretation of the mechanism involved is given.

From the analysis of the physical profiles obtained after isochronal annealing, an effective diffusion coefficient at 900°C equal to 5 × 10^?16 cm² s^?1 has been calculated.     

注入Mo 在Zr57Nb5Cu15.4Ni12.6Al10非晶合金中的扩散

通过二次离子质谱仪（SIMS）研究了Mo在Zr₅₇Nb₅Cu_15.4Ni_12.6Al₁₀非晶合金中的扩散，并计算出其扩散激活能Q和前置系数D₀分别为1.95 eV和1.13×10^-5m²s^-1.根据Stokes-Einstern关系式研究了玻璃转变温度以下593—673 K之间Zr₅₇Nb 关键词： 扩散 离子注入 二次离子质谱（SIMS） 黏滞特性     

Knight shifts and magnetic susceptibilities of the intermetallic compounds CeCu4 and CeCu5

The magnetic susceptibility and Knight shift of the compounds CeCu₄ and CeCu₅ have been measured over the temperature ranges 80–800 and 140–400 K, respectively. The most important contributions to the magnetic susceptibility are the Curie-Weiss term, expressing the paramagnetism of the localized ?-electrons, and a temperature independent term, which have both been determined. The phenomenological exchange integral F_s? between the 4?-electron spins and conduction electron spins was found to be ?10.43× 10^?3 eV for CeCu₄ and 3.9 × 10^?3 eV for CeCu₅. A reversal in the sign of the s?? coupling for CeCu₅ is noted.     

Ionic conductivity of Zr1−xIn2xO2−x

As x in Zr(In)O_2?x is increased from 0.08 to 0.16 (9–19 mole per cent In₂O₃) the activation energy E(x) for ionic conduction increases from 1.05 to 1.51 eV; the concuctivity decreases from 2 × 10^?5 to 3 × 10^?6Ω^?1cm^?1at 400°C, is composition-independent at about 580°C, and increases from 1 × 10^?2 to 4 × 10^?2Ω^?1cm^?1 at 800°C. The pre-exponential term of the Boltzmann-type conductivity equation depends exponentially on E(x), a much stronger dependence on x than theoretically expected with a model for ionic conductivity that includes nearest-neighbor defect interactions. Analysis of reported conductivity data for Zr(M)O_2?x (M = Sc, Y, Ca and rare earth metals) and other doped oxide electrolytes with fluorite-type structure reveals that the same relationship is observed with these materials when x γ0.08. It is shown that ionic conduction in these oxides is consistent with nearest neighbor vacancy-cation defect interaction forx < 0.08 but that an additional complex interaction with composition-dependent free energy ΔG(x) occurs when xγ 0.08.The lattice constant of Zr(In)O_2?x with the cubic fluorite-type structure is independent of composition, 5.114 ± 0.002 Å, in agreement with ionic size considerations.     

Preparation and semiconducting properties of Th3As4

The resistivity, thermoelectric power and Hall constant in the temperature range of 78–830 K were determined for polycrystalline Th₃As₄ samples obtained by annealing thin thorium slabs in arsenic vapour. The samples examined were n-type semiconductors with a carrier concentration ranging from 1.0 × 10¹⁸cm^?3 to 2.8 × 10¹⁸ cm^?3 for which the effective mass was found to be equal to 0.55–0.76m₀. The Hall mobility, about 450cm²V^?1s^?1 at room temperature, obeys a $\text{T}{}^{\mathrm{<mtext>?3</mtext><mtext>2</mtext>}}$ law at high temperatures. On the basis of the electrical measurements the forbidden gap of Th₃As₄ was found to be equal to 0.43 eV.     

Conductivity of β″ and ion rich β alumina.I.H.+(H2O)n compounds

The conductivity and thermal stability of H⁺(H₂O)_n β″ and ion rich β alumina single crystals have been measured by the complex impedance method in the 25–700°C temperature range. Two mechanisms of conductivity were assumed: proton transfer at lower temperatures and H₃O⁺ diffusion in the high-temperature range. Both structures have similar properties, but ion rich β alumina possesses the best stability and the lowest activation energy (β: 0.15 eV, β″: 0.20 eV below 400 and 300°C respectively). The room-temperature conductivity is ≈5×10^?6 Ω^?1 cm^?1. The conducting properties and mechanisms are discussed and compared to other protonic or ionic conductors.     

Trap characterization for Bi4Ti3O12 thin films by thermally stimulated currents

Thermally stimulated current (TSC) measurements performed in the 100 K–400 K temperature range on Bi₄Ti₃O₁₂ (BiT) thin films annealed at 550 °C and 700 °C had revealed two trapping levels having activation energies of 0.55 eV and 0.6 eV. The total trap concentration was estimated at 10¹⁵ cm⁻³ for the samples annealed at 550 °C and 3×10¹⁵ cm⁻³ for a 700 °C annealing and the trap capture cross-section was estimated about 10⁻¹⁸ cm². From the temperature dependence of the dark current in the temperature range 20 °C–120 °C the conduction mechanism activation energy was found to be about 0.956–0.978 eV. The electrical conductivity depends not only on the sample annealing temperature but also whether the measurement is performed in vacuum or air. The results on the dark conductivity are discussed considering the influence of oxygen atoms and oxygen vacancies. Received: 28 January 1998 / Accepted: 8 January 1999 / Published online: 5 May 1999     

Pressure dependent optical absorption edge shift and compressibility of CdCr2Se4 single crystals

The pressure shift of the optical absorption edge (dE_g/dp = (1.1 ± 0.1) × 10^?6 eV bar^?1) and the compressibility (κ = (1.3 ± 0.) × 10^?6 bar^?1) of single crystalline CdCr₂Se₄ have been measured at ambient temperature. These data suggest an interpretation of the fundamental absorption in terms of either p → p interband or p → localized d charge transfer transitions, but exclude excitations involving s-band states.     

Electrical conduction and 1ƒ noise in Li-DOPED MnO

Electrical resistivity, thermoelectric power and current noise were measured on Li-doped MnO single crystals in the temperature range from 300 to 1000 K. Below 700 K the crystals are p-type and the activation energy of the resistivity is 0.75 eV. Around 700 K the activation energy changes from 0.75 to 1.25 eV owing to a change from p- to n-type conduction. The depth of the Li acceptor is found to be 0.65 eV. From resistivity and thermoelectric power data it is concluded that the bandgap in first approximation can be written as E_s(T) = E_o ? γT between 750 and 1000 K, with E_o = 1.9 eV and γ = 6 × 10^?4 eV/K. The current noise spectra show $\text{1}\text{?}$ noise. The magnitude of the $\text{1}\text{?}$ noise is strongly temperature dependent. From the noise data it is deduced that E_o = 2.2 eV and γ = 10^?3 eV/K in the temperature range 430–700 K.     

Ferroelectric and optical properties of Ba6Ti2Nb8O30 single crystals

The dielectric, optical and non-linear optical properties of Ba₆Ti₂Nb₈O₃₀ single crystals were examined from room temperature up to the Curie temperature of 245°C. The spontaneous polarization at room temperature was estimated as 0·22±0·01 C/m². The linear electrooptic constants were measured as r₃₃^T=(1·17±0·02)×10^?10 and r₁₃^T=(0·42±0·01)×10^?10 m/V. The non-linear optical coefficients were d₃₃=(15·1±2·0)×10^?12 and d₃₁=(11·0±2·0)×10^?12 m/V, which are comparable to those of Ba₄Na₂Nb₁₀O₃₀. Temperature dependences of δ₃₃ and δ₃₁ (Miller's δ) were found to be proportional to that of P_s.     

Neutron scattering in Ag+ and Na+ β-aluminas

Na⁺ and Ag⁺ β-alumina for various stoichiometries and for various hydration states have been studied by neutron scattering using incident energy of 0.8 meV with a resolution of 20 μeV in the 200–325° C temperature range. From the weak quasielastic signal (QES) observed for the non- stoichiometric (NS) Ag⁺ β-alumina a translational diffusion constant D_t has been estimated at about 10^-5 cm² s^-1 at 200°C. No such QES has been observed for stoichiometric Ag⁺ and Na⁺ compounds. The dehydration of Na⁺ β-alumina has been evidenced by the disappearance of the broad QES above 300°C; correlatively the low frequency inelastic spectrum of Na⁺ of β-alumina is changed.     

Anomalous temperature dependence of the energy gap of AgGaS2

The lowest energy gap Eg of AgGaS₂ in the temperature range from 4.2 to 300° K was determined from the reflectivity, photoluminescence and absorption measurements. Below ～ 80° K the temperature coefficient of the energy gap is +6 × 10^-5eV/°K. Above ～80° K the sign of the coefficient reverses and the value is -1.8 × 10^-4eV/°K. The positive value is explained with the lattice dilation effect being the dominant mechanism for the energy gap variation at lower temperatures than ～80°K.     

Simulation of the thermal fragmentation of fullerene C60

Defect formation and annealing processes in fullerene C₆₀ at T = (4000–6000) K are studied using molecular dynamics with a tight-binding potential. The cluster lifetime until fragmentation, which proceeds, as a rule, through the loss of a C₂ dimer, has been found as a function of temperature. The activation energy and the frequency factor in the Arrhenius equation for the fragmentation rate have been found to be E _a = (9.2 ± 0.4) eV and A = (8 ± 1) × 10¹⁹s^?1. It is shown that fragmentation can occur already after the C₆₀ cluster loses its spherical shape. This fact must be taken into account in theoretical calculations of E _a.