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1.
We have studied the photoluminescence of calcite crystals. In the blue region of the photoluminescence spectrum of calcite crystals obtained from Siberia (Russia) and from Saaremaa Island (Estonia), three strongly overlapping luminescence bands due to intrinsic defects are observed. Luminescence due to impurities in the crystals are hardly detectable. The experimentally measured time dependence of the luminescence intensity for the indicated luminescence bands is compared with the dependences obtained as a result of a calculation based on a proposed model for the luminescence center. Better agreement between experiment and calculation is achieved if the model of the luminescence center includes a metastable level with electron ejection energy of 4 meV; the characteristic time for the radiative transition is 1.3 nsec. Studying the time dependence of the luminescence at different wavelengths within the indicated bands allows us to conclude that the photoluminescence (three bands) is due to one type of luminescence center. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 4, pp. 498–501, July–August, 2006.  相似文献   

2.
The symmetry of the normal vibrations of crystals with the CdAs2 lattice is established. Selection rules are derived for the infrared absorption and Raman scattering of light; also derived are the selection rules for the inelastic scattering of slow neutrons.  相似文献   

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The spectrum composition of luminescence and the electrical reflection ER of cadmium selenide single crystals doped.with 1014, 1015, and 1016 atoms/cm2 of phosphorus ions and subjected to different annealing modes are studied. It is shown that the spectrum composition of the luminescence of single-crystal domains doped with phosphorus ions is determined by two phenomena: implantation effects and change in material stoichiometry. The changes in the ER spectrum are associated with the change in the degree of ordering of the crystal domain being exposed.Translated from Izvestiya Vysshikh Uehebenykh Zavedenii, Fizika, No. 3, pp. 49–54, March, 1978.  相似文献   

5.
In LiBaF3 crystals both valence–core transitions (5.4–6.5 eV) and so-called self-trapped exciton luminescence (about 4.3 eV) are important for practical application. Here, we present a study of 4.3 eV luminescence under photo- and thermostimulation after X-irradiation of undoped LiBaF3 crystals at various temperatures. Optically stimulated luminescence as a result of electron recombination with both self-trapped holes and holes localized at some defects, were observed after X-irradiation below 130 K and that of electron recombination with defect-localized holes was observed after X-irradiation above 130 K. The spectra of thermo-stimulated luminescence (TSL) contain a broad band about 4 eV related to the electron (high-energy side) or hole (low-energy side) recombination depending on TSL peak temperature.  相似文献   

6.
The temperature dependence of the photoluminescence spectra of AgGaTe2 single crystals obtained by the Bridgman-Stockbarger method is investigated within the temperature range 10-300 K. The emission bands associated with donor-acceptor recombination and free and bound excitons are detected. The bonding energy of the free exciton and the forbidden gap of the crystals at 10 K are calculated. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 2, pp. 222–224, March–April, 2000. This work is partially sponsored by the British Royal Society, INTAS (grant No. 634), and EPSRC (grant GR/L 62757).  相似文献   

7.
Electron spin resonance studies were carried out on VO2+ in cadmium maleate dihydrate single crystals at 303 K. The spin hamiltonian parameters were evaluated. The results lead us to conclude that like Cu2+, VO2+ enters the lattice interstitially.  相似文献   

8.
The creep of cadmium single crystals has been investigated in the temperature range of 78 to 297 K. It has been shown that the transient creep of Cd single crystals is described by a time dependence of the creep strain rateå t m wherem is a function of the resolved shear stress and temperature. The activation areaA* depends on the resolved shear stress,, A * r wherer=1 for room temperature andr 1·4 for 204 and 78 K. The activation enthalpy does not practically depend on the resolved shear stress in the whole region of the resolved shear stress measured and with increasing temperature it increases roughly withT 2. For temperatures above 200 K the nonconservative jog motion is proposed to be the dominant thermally activated process.The authors are very grateful to Dr. P.Kratochvíl for valuable discussions.  相似文献   

9.
《Radiation measurements》2004,38(4-6):579-584
We present photoluminescence spectra of La2.7Lu2.29Cr0.01Ga3O12 and La2.32Lu2.59Cr0.02Ga3.07O12 doped with Cr3+ obtained at high hydrostatic pressure up to 220 kbar, applied in a diamond anvil cell at 20 K and room temperature. In both materials we have obtained a pressure-induced 4T22E electronic cross-over. On the basis of the low-temperature R line luminescence at pressures above 100 kbar we have distinguished two dominant Cr3+ sites: and β, existing in both materials, and one minor site δ, that exists only in La2.32Lu2.59Cr0.02Ga3.07O12. The pressure-induced shifts of the R1, R and R lines as well as the pressure shift of the broad band related to the 4T24A2 transition in both materials have been estimated.  相似文献   

10.
The luminescence properties of single crystals of PbFCl and PbFBr at 4.2 K under ultraviolet irradiation are presented for the first time. In PbFCl three and in PbFBr four emission bands have been observed. The red bands are ascribed to Pb+ centres. Direct exciton recombination is absent in both compounds.  相似文献   

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Infra-red (IR) photoluminescence (PL) spectra of ZnSe crystals doped with Yb, Gd rare-earth impurities and Cr impurity are investigated. The influence of stoichiometric deviation on the spectra is studied and the structure of complex IR PL bands is analysed. The good coincidence between the structures of IR PL spectra of the samples doped with Yb, Gd, and Cr is shown. Correlation between the component parts of the bands at 1 and 2 μm is found and possibility to control the composition of IR PL spectra by enrichment of the samples with Zn or Se is discussed. The models that explain the formation of complexes based on rare-earth and background Cr and Cu impurities, responsible for IR PL bands, are proposed. Keywords: IR luminescence, ZnSe, Rare-earth impurities, Cr impurity.  相似文献   

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An experimental study was made of the penetration of silver by the thermal-diffusion method into cadmium sulfide. The silver was deposited on the samples by thermal evaporation in vacuum. Optical and electrical-probing methods were used to study the rates of surface and bulk diffusion at various temperatures. The temperature dependence of the diffusion coefficient was established for the purity used. After the penetration of the silver impurity, the low-resistivity ( 0.1 · cm), nonphotosensitive cadmium sulfide samples displayed high resistivity ( 106-108 · cm) and photosensitivity.Translated from Izvestiya VUZ. Fizika, No. 7, pp. 12–16, July, 1970.  相似文献   

17.
We have developed a method for solubilization of hydrophobic CdSe/ZnS nanocrystals of the core/shell type, obtained by high-temperature synthesis in coordinating organic solvents. The method is based on chemical modification of the surface of the nanocrystals with hydrophilic organic mercapto compounds. We have observed that long-chain mercaptoundecanoic acid molecules effectively protect the surface of CdSe/ZnS nanocrystals in water, increasing (compared with short-chain molecules) the photostability of the nanocrystals. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 4, pp. 506–509, July–August, 2006.  相似文献   

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Mangan doped GaSe single crystals have been studied by thermoluminescence measurements performed with various heating rates between 0.4 and 1.0 K/s in the temperature range of 10?300 K. Thermoluminescence spectra exhibited four distinguishable peaks having maximum temperatures at 47, 102, 139 and 191 K revealing the existence of trapping levels in the crystals. Curve fitting and initial rise methods were applied to observed peaks to determine the activation energies of four trapping levels. Capture cross-sections of each level were also evaluated using the obtained energy values. Moreover, heating rate dependencies of the obtained peaks were investigated. It was shown that increase in the heating rate resulted in the decrease in thermoluminescence intensity and shift of the peak maximum temperatures to higher values. Discrete, single trap behaviour was established for acceptor level related with the peak at 191 K by analysing the sequentially obtained peaks with different stopping temperatures between 15 and 65 K.  相似文献   

20.
Ssveral samples of CdTe were measured in a temperature range of –190C to 100C. The activation energies of the levels and their cross-section were determined. With some samples it was found that for more rapid heating the maxima of the curves of thermostimulated currents are shifted towards lower temperatures. Altogether three trap levels were found.  相似文献   

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