Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet–NO Ge-surface pretreatment

Reactive cosputtering is employed to prepare high-permittivity HfTiO gate dielectric on n-Ge substrate. Effects of Ge-surface pretreatment on the interface and gate leakage properties of the dielectric are investigated. Excellent performances of Al/HfTiO/GeO _x N _y /n-Ge MOS capacitor with wet–NO surface pretreatment have been achieved with a interface-state density of 2.1×10¹¹ eV⁻¹ cm⁻², equivalent oxide charge of −7.67×10¹¹ cm⁻² and gate leakage current density of 4.97×10⁻⁵ A/cm² at V _g =1 V.     

Ferroelectric and phase transition studies in cesium nitrate: poly(vinyl?alcohol)?composite films

The composite films of cesium nitrate (CsNO₃) and poly(vinyl alcohol) (PVA) with varying composition were prepared using the solvent cast method. The hysteresis loop characteristics show optimum remnant polarization (P _r ) of 2.75 μC/cm² at 50 wt.% composition. The field emission scanning electron microscope images show a nearly homogeneous distribution of CsNO₃ grains in the 50 wt.% composite film. The temperature dependence of the remnant polarization shows a diffused transition temperature range from the ferroelectric to the paraelectric phase and this has been attributed to the reduced enthalpy. The butterfly features of the dielectric constant–voltage (ε–V) characteristics have been attributed to polarization switching.     

Photovoltaic activity in a ZnSe/PEO–chitosan blend electrolyte junction

Thin films of ZnSe and PEO–chitosan blend polymer doped with NH₄I and iodine crystals were prepared to form the two sides of a semiconductor electrolyte junction. ZnSe was electrodeposited on indium tin oxide (ITO) conducting glass. The polymer is a blend of 50 wt% chitosan and 50 wt% polyethylene oxide. The polymer blend was complexed with ammonium iodide (NH₄I), and some iodine crystals were added to the polymer–NH₄I solution to provide the I⁻/I³⁻redox couple. The room temperature ionic conductivity of the polymer electrolyte is 4.32 × 10⁻⁶ S/cm. The polymer film was sandwiched between the ZnSe semiconductor and an ITO glass to form a ZnSe/polymer electrolyte/ITO photovoltaic cell. The open circuit voltage (V _oc) of the fabricated cells ranges between 200 to 400 mV and the short circuit current between 7 to 10 μA.     

Laser forward transfer of silver electrodes for organic thin-film transistors

Organic thin-film transistors (OTFTs) with top- and bottom-contact configurations were fabricated using silver nano-inks printed by laser forward transfer for the gate and source/drain electrodes with pentacene and poly-4-vinylphenol as the organic semiconductor and dielectric layers, respectively. The volume of the laser-printed Ag pixels was typically in the subpicoliter (0.2–0.4 pl) range. The top-contact OTFTs resulted in lower contact resistance compared to those obtained from the bottom-contact OTFTs, and showed improved overall device performance. The top-contact OTFTs exhibited field-effect mobilities of ∼0.16 cm² V⁻¹ s⁻¹ and on/off current ratios of ∼10⁵.     

Orientation dependence of electrical properties of 0.96Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-0.04BaTiO<Subscript>3</Subscript> lead-free piezoelectric single crystal

In this paper, a single crystal of 0.96Na_0.5Bi_0.5TiO₃-0.04BaTiO₃ with dimensions of Φ 30×10 mm was grown by the top-seeded-solution growth method. X-ray powder diffraction results show that the as-grown crystal possesses the rhombohedral perovskite-type structure. The dielectric, piezoelectric and electrical conductivity properties were systematically investigated with 〈001〉, 〈110〉 and 〈111〉 oriented crystal samples. The room-temperature dielectric constants for the 〈001〉, 〈110〉 and 〈111〉 oriented crystal samples are found to be 650, 740 and 400 at 1 kHz. The (T _m, ε _m) values of the dielectric temperature spectra are almost independent of the crystal orientations; they are (306°C, 3718), (305°C, 3613) and (307°C, 3600) at 1 kHz for the 〈001〉, 〈110〉 and 〈111〉 oriented crystal. The optimum poling conditions were obtained by investigating the piezoelectric constants d ₃₃ as a function of poling temperature and poling electric field. For the 〈001〉 and 〈110〉 crystal samples, the maximum d ₃₃ values of 146 and 117 pC/N are obtained when a poling electric field of 3.5 kV/mm and a poling temperature of 80°C were applied during the poling process. The as-grown 0.96Na_0.5Bi_0.5TiO₃-0.04BaTiO₃ crystal possesses a relatively large dc electrical conductivity, especially at higher temperature, having a value of 1.98×10⁻¹¹ Ω⁻¹⋅m⁻¹ and 3.95×10⁻⁹ Ω⁻¹⋅m⁻¹ at 25°C and 150°C for the 〈001〉 oriented crystal sample.     

Conductivity, dielectric behaviour and thermal stability studies of lithium ion dissociation in poly(methyl methacrylate)-based gel polymer electrolytes

Thin films of poly(methyl methacrylate) (PMMA) with lithium triflate (LiCF₃SO₃) were prepared by using the solution-casting method with PMMA as the host polymer. Ionic conductivity and dielectric measurements were carried out on these films. The highest conductivity for polymer electrolyte with a ratio of 65:35 was found to be 9.88 × 10⁻⁵ S cm⁻¹, which is suitable for the production of mobile phone battery. Thermal gravimetric analysis was carried out to evaluate the thermal stability of the polymer electrolyte. The addition of salts will increase thermal stability of the polymer electrolyte.     

Degradation process in organic thin film devices fabricated using P3HT

The stability of regioregular poly(3-hexylthiophene 2,5-diyl) (P3HT) thin films sandwiched between indium tin oxide (ITO) and aluminium (Al) electrodes have been investigated under normal environmental conditions (25°C and RH∼45–50%). Electrical and optical properties of ITO/P3HT/Al devices have been studied over a period of 30 days. Mobility μ of the order of 10⁻⁴ cm²/V-s has been obtained from the V ² law in the as-deposited P3HT films. Scanning electron microscopy (SEM) investigations show blistering of Al contacts in devices with a poly(3,4-ethylenedioxythiophene) (PEDOT) interlayer on application of voltage whereas no blistering is seen in devices without PEDOT. The results have been explained in terms of trap generation and propagation and the moisture-absorbing nature of PEDOT.      

Electric-field dependence of dielectric properties of sol-gel derived Ba(Zr0.2Ti0.8)O3 ceramics

The effect of a dc bias field on the diffuse phase transition and nonlinear dielectric properties of sol-gel derived Ba(Zr_0.2Ti_0.8)O₃ (BZT) ceramics are investigated. Diffuse phase transitions were observed in BZT ceramics and the Curie–Weiss exponent (CWE) was γ∼2.0. The dielectric constant versus temperature characteristics and the γ in the modified Curie–Weiss law, ε ⁻¹=ε _m ⁻¹[1+(T−T _m ) ^γ /C₁](1≤γ≤2), as a function of the dc bias field was obtained for BZT ceramics. The results indicated that γ is a function of dc bias field, and the γ value decreased from 2.04 to 1.73 with dc bias field increasing from 0 to 20 kV/cm. The dielectric constant decreases with increasing dc bias field, indicating a field-induced phase transition. The dc bias field has a strong effect on the position of the dielectric peak and affects the magnitude of the dielectric properties over a rather wide temperature range. The peak temperature of the dielectric loss does not coincide with the dielectric peak and an obvious minimum value for the dielectric loss at the temperature of the dielectric peaks is observed. At room temperature, 300 K, the high tunability (K=80%), the low loss tangent (≈0.01) and the large FOM (74), clearly imply that these ceramics are promising materials for tunable capacitor-device applications.     

Surface modified polymeric gate insulators for pentacene organic thin-film transistors

This paper demonstrates effects of a surface modification of polymeric gate insulators on a performance of organic thin-film transistor (OTFT). Pentacene OTFTs were fabricated with three types of polymer gate insulators—poly(4-vinylphenol) (PVP, G1) with comparably high dielectric constant, polyimide (PI, G2) with n-octadecyl (C₁₈) side chain, which resulted in hydrophobicity and low dielectric constant, and surface modified PVP(G3). The G3 was prepared by a spin-coating the solution of G2 onto the G1 film. We found that the n-octadecyl group of the G3 protruded from the surface and made the PVP surface more hydrophobic. The less polar surface strongly improved the device performance. Subthreshold slope (s.s.) of the OTFT with G3 as the gate insulator decreased significantly to 2.7 V/dec, which was much smaller than that of OTFTs fabricated with G1 (4.0 V/dec). That is, thin layer with fewer C₁₈ group in contact with pentacene induced a good electrical property like lower s.s. Further the higher dielectric constant of the underlying layer resulted in higher mobility of the device. The mobility (0.50 cm² V⁻¹ s⁻¹) of the OTFT with G3 as the gate insulator showed a higher value compared to that (0.25 cm² V⁻¹ s⁻¹) of the OTFT with G2.     

Quantitative analysis of charge-carrier trapping in organic thin-film transistors from transfer characteristics

A dynamic method for quantifying the amount and mechanism of trapping in organic field effect transistors (OFETs) is proposed. It exploits transfer characteristics acquired upon application of a triangular waveform gate sweep V _G. The analysis of the transfer characteristics at the turning point V _G=−V _max between forward and backward gate sweeps, viz. around the maximum gate voltage V _max applied, provides a differential slope Δm which depends exclusively on trapping. Upon a systematic change of V _max it is possible to extract the initial threshold voltage, equivalent to one of the observables of conventional stress measurements, and assess the mechanism of trapping via the functional dependence on the current. The analysis of the differential logarithmic derivative at the turning point yields the parameters of trapping, as the exponent β and the time scale of trapping τ. In the case of an ultra-thin pentacene OFET we extract β=1 and τ=10²–10³ s, in agreement with an exponential distribution of traps. The analysis of the hysteresis parameter Δm is completely general and explores time scales much shorter than those involved in bias stress measurements, thus avoiding irreversible damage to the device.     

Pulsed laser deposition of Zr–N codoped <Emphasis Type="Italic">p</Emphasis>-type ZnO thin films

Present p-type ZnO films tend to exhibit high resistivity and low carrier concentration, and they revert to their natural n-type state within days after deposition. One approach to grow higher quality p-type ZnO is by codoping the ZnO during growth. This article describes recent results from the growth and characterization of Zr–N codoped p-type ZnO thin films by pulsed laser deposition (PLD) on (0001) sapphire substrates. For this work, both N-doped and Zr–N codoped p-type ZnO films were grown for comparison purposes at substrate temperatures ranging between 400 to 700 °C and N₂O background pressures between 10⁻⁵ to 10⁻² Torr. The carrier type and conduction were found to be very sensitive to substrate temperature and N₂O deposition pressure. P-type conduction was observed for films grown at pressures between 10⁻³ to 10⁻² Torr. The Zr–N codoped ZnO films grown at 550 °C in 1×10⁻³ Torr of N₂O show p-type conduction behavior with a very low resistivity of 0.89 Ω-cm, a carrier concentration of 5.0×10¹⁸ cm⁻³, and a Hall mobility of 1.4 cm² V⁻¹ s⁻¹. The structure, morphology and optical properties were also evaluated for both N-doped and Zr–N codoped ZnO films.     

Impact of ethylene carbonate on electrical properties of PVA/(NH4)2SO4/H2SO4 proton-conductive membrane

A new proton-conductive membrane (PCM) based on poly (vinyl alcohol) and ammonium sulfate (NH₄)₂SO₄ complexed with sulfuric acid and plasticized with ethylene carbonate (EC) at different weight percent were prepared by casting technique. The structural properties of these electrolyte films were examined by XRD studies. The XRD patterns of all the prepared polymer electrolytes reveal the amorphous nature of the films. ac conductivity and dielectric spectra of the electrolyte were studied with changing EC content from weight 0.00 to 0.75 g. A maximum conductivity of 7.3 × 10⁻⁵ S cm⁻¹ has been achieved at ambient temperature for PCM containing 0.25 g of ethylene carbonate. The electrical conductivity σ, dielectric constant ε′ and dielectric loss ε″ of PCM in frequency range (100 Hz to 100 KHz), and temperature range (300–400 K) were carried out. Measurement of transference number was carried out to investigate the nature of charge transport in these polymer electrolyte films using Wagner’s polarization technique. Transport number data showed that the charge transport in these polymer electrolyte systems was predominantly due to ions. The electrolyte with the highest electrical conductivity was used in the fabrication of a solid-state electrochemical cell with the configuration (Mg/PCM/PbO₂). Various cell parameters ldensity, and current density were determined. The fabricated cells gave capacity of 650 μAh and have an internal resistance of 11.6 kΩ.     

Thermo-optic coefficients of monoclinic KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>

The three thermo-optic coefficients of the biaxial laser host KLu(WO₄)₂ are measured at 633 nm by a deflection method. Their values at 300 K amount to ∂ n _g /∂ T=−7.4×10⁻⁶ K⁻¹; ∂ n _m /∂ T=−1.6×10⁻⁶ K⁻¹ and ∂ n _p /∂ T=−10.8×10⁻⁶ K⁻¹. Nearly athermal propagation directions are found for polarizations along the N _m and N _p dielectric axes.     

Effect of illumination on the space charge limited current in organic bulk heterojunction diodes

Current–voltage (J–V) characteristics of organic bulk heterojunction diodes based on an interpenetrating network of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C₆₁-butyric acid methyl esters (PCBM) have been studied in the dark and under halogen lamp illumination. The diodes contained 1:1 and 1:0.6 weight ratios of P3HT and PCBM. For both diodes the currents measured in dark (J _d , commonly known as the dark current) in forward bias are found to agree with the space charge limited current (SCLC). The illuminated current consists of a current due to applied voltage (J _da ) and the light generated current (J _L ). J _da  extracted from the illuminated current agrees well with Shockley’s diffusion and recombination current. This observation shows that illumination changes the SCLC into Shockley’s diffusion and recombination current. The forward current under illumination has been observed to be greater than the dark current, which is contrary to the photo–voltaic (PV) theory. This result is well explained by the change of SCLC into Shockley’s diffusion and recombination current. Former address of S.C. Jain: IMEC, Kapeldreef 75, 3001 Leuven, Belgium.     

Structure and electrical properties of HfO<Subscript>2</Subscript> high-<Emphasis Type="Italic">k</Emphasis> films prepared by pulsed laser deposition on Si (100)

High-k gate dielectric hafnium dioxide films were grown on Si (100) substrate by pulsed laser deposition at room temperature. The as-deposited films were amorphous and that were monoclinic and orthorhombic after annealed at 500°C in air and N₂ atmosphere, respectively. After annealed, the accumulation capacitance values increase rapidly and the flat-band voltage shifts from −1.34 V to 0.449 V due to the generation of negative charges via post-annealing. The dielectric constant is in the range of 8–40 depending on the microstructure. The I–V curve indicates that the films possess of a promising low leakage current density of 4.2×10⁻⁸ A/cm² at the applied voltage of −1.5 V.     

Effect of non-zero Schottky barrier on the J-V characteristics of organic diodes

Current-voltage (J -Vcharacteristics of poly(3-hexylthiophene) (P3HT) are studied at different temperatures upto high voltages ∼ 20 V in the hole-only device configuration. The characteristics are studied in the temperature range 310-210K. In the intermediate voltage range the J -V characteristics follow J V ^l+1 , where l > 1 . As the voltage increases to high values J still varies as a power law i.e. as V^m, but contrary to the literature result m becomes < 2 . This behavior is explained theoretically in terms of non-zero injection Schottky barriers. The complete analytical expressions for the actual trap filled limit voltage (V′ _TFL) and J -V curves beyond V′ _TFL are presented.     

Effect of the ceramic grain size and concentration on?the?dynamical mechanical and dielectric behavior of?poly(vinilidene fluoride) Pb(Zr0.53Ti0.47)O3 composites

In this work, poly(vinilidene fluoride)/Pb(Zr_0.53Ti_0.47)O₃([PVDF]_1−x /[PZT] _x ) composites of volumetric fractions x and (0–3) type connectivity were prepared in the form of thin films. PZT powder of crystallite size of 0.84, 1.68, and 2.35 μm in different amounts of PZT (10, 20, 30, and 40%) was mixed with the polymeric matrix. The crystalline phase of the polymeric matrix was the nonpolar α-phase and the polar β-phase. Dielectric and dynamic mechanical (DMA) measurements were performed to these composites in order to evaluate the influence of particle size and the amount of PZT filler with respect to the PVDF matrix. The inclusion of ceramic particles in the PVDF polymer matrix increases the complex dielectric constant and dynamical mechanical response of the composites. A similar behavior is observed for the α- or β-phase of the polymeric matrix indicating that the PVDF polymer matrix is not particularly relevant for the composite behavior. On the other hand, ceramic size and especially content play the major role in the increase of the dielectric response and the room temperature storage modulus. In particular, the storage modulus increases with increasing PZT concentration, but this increase is more pronounced, in terms of maximum value, for the sample with 2.35 μm particle size; DMA reveals two main relaxations in the analyzed samples. A low-temperature process maximum at ca. −40°C, usually labeled by β or α _a associated to the T _g of the polymer and the α-relaxation at temperatures above 30°C. The β-relaxation is also observed in the dielectric measurements. The models used to asses the dielectric behavior of the samples with increasing PZT concentration indicate that the particle–matrix interaction plays a relevant role, as well as the particle asymmetry and relative orientation, being the Yamada model the most appropriate to describe the composite behavior. An erratum to this article can be found at     

Field-effect transistor structures on the basis of poly(3-hexylthiophene), fullerene derivatives [60]PCBM, [70]PCBM,and nickel nanoparticles

Organic field-effect transistor (OFET) structures with the active layers on the basis of composite films of semiconductor polymer poly(3-hexylthiophene) (P3HT), fullerene derivatives [60]PCBM, [70]PCBM, and nickel (Ni) nanoparticles are obtained, and their optical, electrical, and photoelectrical properties are studied. It is shown that introducing Ni nanoparticles into P3HT: [60]PCBM and P3HT: [70]PCBM films leads to an increase in the absorption and to quenching of photoluminescence of the composite in the 400–600 nm spectral band due to the plasmon effect. In P3HT: [60]PCBM: Ni and P3HT: [70]PCBM: Ni OFET structures at the P3HT: [60]PCBM and P3HT: [70]PCBM concentrations of ~1: 1 and Ni concentrations of ~3–5 wt %, current–voltage (I–V) characteristics typical of ambipolar OFETs with the dominant hole conduction are observed. The charge-carrier (hole) mobilities calculated from the I–V characteristic at V_G =–10 V were found to be ~0.46 cm²/(V s) for P3HT: [60]PCBM: Ni and ~4.7 cm²/(V s) for P3HT: [70]PCBM: Ni, which means that the mobility increases if [60]PCBM in the composition is replaced with [70]PCBM. The effect of light on the I–V characteristics of P3HT: [60]PCBM: Ni and P3HT: [70]PCBM: Ni OFETs is studied.     

Directional solidification of Al–Cu–Ag alloy

Al–Cu–Ag alloy was prepared in a graphite crucible under a vacuum atmosphere. The samples were directionally solidified upwards under an argon atmosphere with different temperature gradients (G=3.99–8.79 K/mm), at a constant growth rate (V=8.30 μm/s), and with different growth rates (V=1.83–498.25 μm/s), at a constant gradient (G=8.79 K/mm) by using the Bridgman type directional solidification apparatus. The microstructure of Al-12.80-at.%–Cu-18.10-at.%–Ag alloy seems to be two fibrous and one lamellar structure. The interlamellar spacings (λ) were measured from transverse sections of the samples. The dependence of interlamellar spacings (λ) on the temperature gradient (G) and the growth rate (V) were determined by using linear regression analysis. According to these results it has been found that the value of λ decreases with the increase of values of G and V. The values of λ ² V were also determined by using the measured values of λ and V. The experimental results were compared with two-phase growth from binary and ternary eutectic liquid.     

Preparation and electrochemical properties of nano Al<Subscript>0.2</Subscript>V<Subscript>2</Subscript>O<Subscript>5.3−<Emphasis Type="BoldItalic">δ</Emphasis></Subscript> cathode materials for rechargeable lithium batteries

Nano-sized Al³⁺-doped V₂O₅ cathode materials, Al_0.2V₂O_5.3−δ , were prepared by an oxalic acid assisted sol–gel method at 350 °C (sample A) and 400 °C (sample B). X-ray diffraction confirmed that samples A and B were pure phase Al_0.2V₂O_5.3−δ with an orthorhombic structure close to that of V₂O₅. Scanning electron microscopy showed that sample A was in nanoscale with a mean particle size about 50 nm. Cyclic voltammetry showed the good electrochemical and structural reversibility of the Al_0.2V₂O_5.3−δ nanoparticles during the Li⁺ insertion/extraction process. The Al_0.2V₂O_5.3−δ nanoparticles exhibited excellent charge–discharge cycling performance and rate capability compared to that of bulky V₂O₅ electrodes. For instance, the materials delivered a reversible specific capacity about 180 mAh g⁻¹ (sample A) and 150 mAh g⁻¹ (sample B), in the potential window of 4.0–2.0 V at the current density of 150 mA g⁻¹. The Al_0.2V₂O_5.3−δ nanoparticles in particular showed almost no capacity fading for at least 50 cycles.