LTD用磁芯材料磁化特性实验研究

 通过比较测量磁化特性的几种方法，采用脉冲电容器快速放电方法，获取了ns级上升前沿的快脉冲，对高频响应比较好、适合于直线型脉冲变压器(LTD)的非晶态合金、硅钢带磁芯进行了快脉冲磁化特性实验。通过测试磁芯在快脉冲下初级电流和开路次级电压，获得了磁芯的磁滞回线；测出了它们在不同的磁感应强度随时间的变化率(dB/dt)时的相对磁导率。试验表明两种磁芯样品的相对磁导率随着dB/dt增大而减小，非晶态合金2605SA1样品磁环在dB/dt大于20 T/ms时，相对磁导率小于1 000，硅钢薄带磁芯在dB/dt大于4 T/ms时，相对磁导率小于1 000。     

基于硅波导的喇曼光放大器

在硅波导上添加反向偏压的PIN结构,当波导产生受激喇曼散射时,可以将波导中双光子吸收(TPA)产生的光生自由载流子扫出波导,降低了波导的非线性损失,极大地提高了硅波导中泵浦光对信号光的喇曼增益。为了应用已经非常成熟的硅工艺,并且应用硅波导使器件小型化,根据法布里-帕罗(F-P)腔和行波放大器理论,在硅波导两端的解理面蒸镀增透膜,应用这种波导的喇曼效应设计了一种光放大器,即基于硅波导的喇曼光放大器。建立了计算放大器增益的方程,给出了不同波导长度和输入功率情况下的放大器增益,得出适当增加波导长度和泵浦光功率可以得到较高喇曼增益的结论。基于硅的光放大器有较高的饱和功率且没有泵浦源的限制,通过调整泵浦激光的波长可以放大不同波长的信号光。     

Compact polarization rotator on silicon for polarization-diversified circuits

We demonstrate a polarization rotator based on adiabatic mode evolution on silicon for polarization-diversified circuits. The rotator has a device length of 420?μm, a polarization-conversion efficiency of more than 90%, and an insertion loss less than 1?dB for a wavelength range of 80?nm. Combining the rotator with a compact, broadband polarization beam splitter based on cascaded directional couplers enhances the polarization conversion extinction ratio to over 30?dB with less than 1.5?dB total insertion loss over a 60?nm spectral range.     

基于Add-drop型微环谐振腔的硅基高速电光调制器设计

相比于传统的All-pass型微环谐振腔硅基电光调制器, Add-drop型微环谐振腔可提供更多的设计自由度, 使调制器在不改变杂质掺杂浓度的情况下就能在调制带宽和消光比性能上获得均衡考虑. 本文设计了基于Add-drop型微环谐振腔的高速、且在低调制电压下实现大消光比的硅基电光调制器, 所用微环谐振腔的半径仅仅为20 μm. 重点分析了直波导与微环谐振腔的耦合对调制器性能的影响, 发现较小的Drop端耦合系数有利于消光比的提高, 但是不能同时达到最佳的调制带宽, 因此设计上存在一个带宽和消光比性能上的折中考虑. 根据优化设计的结果进行了实际器件的制作和测试. 静态光谱测试表明, 在3 V反向偏置电压的作用下, 调制器的消光比最大可达12 dB. 动态电光响应测试中, 在仅仅1.2 V的信号幅值电压下测得了8 Gbps数据传输速率的清晰眼图. 关键词： 电光调制器 绝缘体上的硅 微环谐振腔 载流子色散效应     

Design and Fabrication of Micromechanical Optical Switches Based on the Low Applied Voltage

A micromechanical optical switch driven by electrostatic was fabricated with (100) silicon and tilted 2.5°(111) silicon. The pull-in voltage is 13.2V, the insertion loss is less than 1.4dB, the crosstalk is less than -50 dB.     

Laser bias effect on the receiver sensitivity of passive fibre optic star bus networks

We examine in this paper the reduction in receiver sensitivity in passive fibre optic star bus networks due to the laser bias power transmitted by every terminal. Both transimpedance and high impedance preamplifier configurations using PIN and avalanche photodiodes are considered. The penalty in receiver sensitivity is examined as a function of bit rate, number of terminals, amplifier noise and the ratio of the launched laser bias power to average launched signal power. For PIN receivers the penalty has a maximum at low bit rates and falls off rapidly on either side of the maximum. In an example quoted in the paper the PIN receiver sensitivity penalty for networks with less than 50 terminals is less than 1 dB for all bit rates. The penalty for APD receivers increases with bit rate, and, in a further example, is shown to be less than 1 dB for networks with less than 50 terminals operating at bit rates lower than approximately 20 Mbit s^?1. Techniques for reducing the penalty to negligible levels are also examined.     

A polystyrene cap for matching a silicon lens at millimeter wavelengths

A polystyrene cap for a silicon lens has been fabricated by thermal molding. The cap is 0.5mm thick, and it acts as a quarter-wave matching layer at 94GHz. The measured performance from 75GHz to 170GHz agrees with theory. The reflection loss at 94GHz is reduced by 1.5dB. This is an economical way to make a millimeter-wave anti-reflection coating. This makes a monolithic circuit with a gallium-arsenide substrate and a silicon lens much more attractive than before. The total absorption and reflection loss for a linch diameter lens with the cap should be 1.1dB.     

Compact all-optical switch for WDM networks based on Raman effect in silicon nanowavegide

We propose an all-optical switching scheme based on Raman gain in a silicon nanowaveguide suitable for multichannel optical communication. Raman gain is used for amplification of a control pulse with a higher wavelength, which depletes the tuned channel signal. Separation between control and signal pulses should be equal to the Raman shift in silicon. By employing a 3 mm channel nanowaveguide, we demonstrate a channel attenuation of about 12 dB, while the suppression ratios for the first and second neighboring channels are about 1.6 dB and 1 dB, respectively. This scheme can be used as an all-optical switch in dense wavelength division multiplexing networks. Moreover, we demonstrate that the depleted channel can be retrieved by a control pulse with lower wavelength in which the pulse amplifies the channel in contrast to the prior situation.     

Subwavelength confinement in an integrated metal slot waveguide on silicon

We demonstrate propagation losses of less than 0.8 dB/microm in a metal slot waveguide on silicon with a predicted confinement substantially below the optical wavelength (approximately 1.55 microm). We also show compact and efficient coupling of the high-confinement metal slot waveguide with a standard silicon dielectric waveguide with a coupling efficiency of approximately 2.5 dB per facet.     

Development of a hand-held sensor probe for detection of sound components radiated from a specific device using surface intensity measurements

In this paper, a hand-held sensor probe is developed for surface intensity measurements. The sensor probe is composed of a 1/2-in. condenser microphone and a lightweight accelerometer of 1 g (=10⁻³ kg) which are connected with a vibration damper made of silicon rubber. The reliable measurement range of the sensor probe is examined and shown to be 100 Hz to7 kHz for sound and vibration. The precision of intensity measurements is confirmed by experiments in noisy environment. The precision is shown to be less than 3 dB for a random noise environment when the S/N is greater than −10 dB and for pure tone environment when the S/N is greater than −5 dB. The sensor probe is applied to determine the sound power level of a hard disc drive unit of a personal computer in an office setting. Good agreement is obtained for A-weighted sound power levels determined by the ISO method.     

Microwave Photonic Link with Carrier Suppression for Increased Dynamic Range

Theoretical analysis and experimental investigation of microwave photonic links with bias-shifted Mach-Zehnder modulators are presented. An optical amplifier is used to increase link gain and reduce noise figure. The combination of modulator bias shift away from quadrature and optical amplification reduces the link noise figure by more than 15 dB. For modulation frequencies from 2 to 18 GHz, the third-order limited spurious-free dynamic range (SFDR3) of these links is greater than 120 dB, normalized to a 1-Hz bandwidth. Conventional links based on Mach-Zehnder modulators are limited to SFDR3 values of approximately 110 dB, normalized to a 1-Hz bandwidth. This level of performance is achieved without electronic or optical linearization.     

10 Gbit/s Silicon modulator and germanium detector chip-to-chip optical link

Experimental results of a high-speed silicon optical modulator based on carrier depletion in a pipin diode and Germanium photodetectors are presented. 10 Gbit/s data transmission is obtained for both optoelectronic devices, with for the optical modulator an extinction ratio (ER) higher than 8 dB and insertion loss (IL) lower than 6 dB and for Ge photodetector, a zero-bias operating at 10 Gbit/s. Finally, a 10 Gbit/s optical link combining Si modulator and Ge photodetector is demonstrated.     

SOI thermo-optic modulator with fast response

Silicon-on-insulator (SOI) technology offers tremendous potential for integration of optoelectronic functions on a silicon wafer. In this letter, a 1 x 1 multimode interference (MMI) Mach-Zender interferometer (MZI) thermo-optic modulator fabricated by wet-etching method is demonstrated. The modulator has an extinction ratio of -11.0 dB, extra loss of -4.9 dB and power consumption of 420 mW. The response time is less than 30μs.     

金刚石薄膜负偏压形核的边缘效应

 在微波等离子体化学气相沉积装置中，研究了金刚石薄膜在Si (100)面上的负偏压形核行为，结果表明，偏压大小对金刚石的形核均匀性有显著影响，而甲烷浓度主要影响形核时间，对金刚石的最大核密度影响不大。在硅片尺寸小于钼支撑架时，形核行为存在明显的边缘效应，即在偏压值低于-150 V时，硅片边缘金刚石核密度急剧降低，远低于硅片中央；在甲烷浓度比较低时，硅片边缘核密度要高于中间。研究表明，造成这种现象的主要原因是硅片下的钼支撑架发射电子所致，过量的原子H对金刚石的形核是不利的。     

Single-mode SiON/SiO2/Si optical waveguides prepared by plasma-enhanced chemical vapor deposition

We present the characteristics of low-propagation-loss single-mode SiON / SiO₂ / Si planar optical waveguides using plasma-enhanced chemical vapor deposition (PECVD). Using a thermal annealing process and a thick silicon dioxide buffer layer, we get an improvement on the propagation loss by the amounts of 1.24 dB /cm and 1.1 dB /cm, respectively. Optical waveguides with propagation loss lower than 0.3 dB /cm can be achieved.     

消偏光纤陀螺的理论和实验研究

本文首次在理论上导出消偏型光纤陀螺的零漂和标度因子表达式,并得出以下两个结论:1)在使用约 40 dB偏振器时,导致陀螺漂移的主要因素是强度误差而并不是振幅误差;2)由光学标度因子与各种器件参量关系表明开环解调时陀螺的线性误差较大.试验样机证明了以上结果,并找出减小漂移的方法.     

High-speed compact silicon digital optical switch with slot structure

A high-speed compact silicon digital optical switch (DOS) is proposed in this paper. The direct electro-optic effect is applied by filling electro-optic polymer in the void slot of the branches, which compensates the limitation of silicon itself. The crosstalk of about 35 dB and the insertion loss of 0.7 dB is obtained, the switching speed is less than 1 ps, and the whole device length can be shortened to 616 μm even using the basic mode-evolving principle and a simple Y-type structure. Analysis also shows that the device has good fabrication tolerance and wavelength independence over the C-band.     

40Gbps NRZ在基于宽带CFBG色散补偿的G.652光纤中无电中继传输500km

在基于宽带CFBG色散补偿的G.652光纤中,40Gbps NRZ码无电中继传输500km,在误码率BER=10(-10)下的功率代价约为2.2dB,积累1h的误码率为7.3×10(-12).传输系统中采用的CFBG的3dB带宽约为1.2nm,中心波长处时延纹波小于25ps,反射谱纹波小于2dB,差分群时延小于1ps....     

A 32-channel 100 GHz wavelength division multiplexer by interleaving two silicon arrayed waveguide gratings

A 32-channel wavelength division multiplexer with 100 GHz spacing is designed and fabricated by interleaving two silicon arrayed waveguide gratings (AWGs). It has a parallel structure consisting of two silicon 16-channel AWGs with 200 GHz spacing and a Mach-Zehnder interferometer (MZI) with 200 GHz free spectral range. The 16 channels of one silicon AWG are interleaved with those of the other AWG in spectrum, but with an identical spacing of 200 GHz. For the composed wavelength division multiplexer, the experiment results reveal 32 wavelength channels in C-band, a wavelength spacing of 100 GHz, and a channel crosstalk lower than -15 dB.     

Hard-molded 51 cm long waveguide array with a 150 GHz bandwidth for board-level optical interconnects

We demonstrated a 51 cm long waveguide array on a poly(methyl methacrylate) sheet fabricated by silicon hard-molding technology. To reduce the silicon sidewall roughness, a wet-oxidation followed by a buffered oxidation etchant etching process is adopted, achieving a surface roughness of 1.2 nm. The waveguide obtained a total insertion loss of -15.1 dB and an adjacent channel cross talk below -31 dB. The 3 dB optical bandwidth is determined to be 150 GHz by the optical autocorrelation method.