Strong optical non-linearities for efficient all-optical switching in GaAlAs waveguides

The light intensity transmission of GaAlAs strip waveguides is sensitively dependent on the strength of the electric field inside the waveguide, when the photon energy is close to the band gap (Franz-Keldysh effect). In a waveguide embedded in a pn-junction the transmitted light itself induces the field changes through the photoelectric effect. This photo-induced Franz-Keldysh effect causes a non-linear intensity transmission of the waveguide. Light power levels far below 1 mW are sufficient to give strong non-linearities. Possible application schemes for modulation and all-optical switching in integrated optics and optoelectronics are discussed.     

Free-carrier absorption modulation in silicon nanocrystal slot waveguides

Free-carrier absorption (FCA) has proven to be an important obstacle in the development of a silicon-based laser; however, FCA may serve as a potential advantage in active silicon-based switches or modulators. In this work, we present FCA modulation in slot waveguides with silicon nanocrystals (Si-ncs) embedded in SiO(2) as the low-index slot material. Slot waveguides were fabricated with and without Si-ncs, and the presence of Si-ncs was shown to increase the pump-induced FCA loss in the waveguides by a factor of 4.5. We modeled the Si-nc material using a four-level rate equation analysis to estimate the excited population of Si-ncs, allowing us to extract a value of 2.6 × 10(-17) cm(2) for the FCA cross section of the Si-nc material.     

Solvent detection using porous silicon optical waveguides

Since the first report on the use of porous silicon as an optical waveguide medium in 1995, significant development has been made towards the understanding and applicability of such material. Here, the introduction of solvents (acetone, methanol, and propan-2-ol) into the pores is shown to dramatically reduce the loss of the waveguides, in a reversible manner. Both the magnitude and duration of this effect are sensitive to the solvent introduced. In some waveguides, for example, the measured loss (at 0.633 μm) falls by as much as 34 dB cm⁻¹ on the introduction of acetone. Theoretical estimates of the effect of solvents on the interfacial scattering loss confirm this as the origin of the observed reductions. These results, combined with the fact that a substantial portion of the guided-mode field interacts with the solvent, indicate an enhanced sensitivity for sensor applications may be achievable.     

Iron-related deep levels in silicon

Deep levels in iron-doped p-Si are investigated by means of capacitance transient spectroscopy. Five Fe-related defects are observed in suitably prepared samples. Rapid quenching produces interstitial Fe_i and FeB, which give rise to levels at E_v + 0.43 eVand 0.10 eV, respectively. Three further levels at E_v + 0.33 eV, E_v + 0.40 eV and E_v + 0.52 eV are caused by slower quenching rates. The concentration of E_v + 0.33 eV in slowly cooled Czochralski-grown Si strongly exceeds the concentration in similarly treated float-zone Si.     

Optimization of plasma-deposited silicon oxinitride films for optical channel waveguides

In view of applications of SiO_xN_y thin films in MOEMS technology, a study of the optomechanical characteristics of the PECVD deposited material are investigated. To optimize the quality of SiO_xN_y layers we establish the relationship between the chemical properties, optical performances, micromechanical stress, and growth parameters of deposited films. To use the SiO_xN_y thin film for the core layer of a strip-loaded waveguide, we propose preparation conditions of SiO_xN_y that offer a low-loss optical waveguide with well-controlled refractive index, based on a low-internal stress multilayer structure.     

Impact of two-photon absorption on self-phase modulation in silicon waveguides

We study the effects of two-photon absorption on the self-phase modulation (SPM) process in silicon waveguides while including both free-carrier absorption and free-carrier dispersion. An analytical solution is provided in the case in which the density of generated carriers is relatively low; it is useful for estimating spectral bandwidth of pulses at low repetition rates. The free-carrier effects are studied numerically with emphasis on their role on the nonlinear phase shift and spectral broadening. We also consider how the repetition rate of a pulse train affects the SPM process.     

Integrated nano-structured silicon waveguides and devices for high-speed optical communications

With progress in fabrication technology, integrated photonics plays an increasingly important role in high-speed optical communications, from monolithic transmitters and receivers for advanced optical modulation formats to on-chip subsystems for optical signal processing. We review our recent work on the highly tailorable physical properties of silicon waveguides for communication and signal processing applications, using slot structures. Controllable chromatic dispersion, nonlinearity, and polarization properties of the waveguides are presented, and the enabled wideband wavelength conversion, optical tunable delay, and signal processing of polarization-multiplexing data channels are discussed.     

Broad band Bragg deflector for optical waveguides on silicon substrates

Technical solutions are described which allow the 500 MHz acousto-optical Bragg deflector integrated onto a silicon substrate to have a good performance and quite high deflection efficiency. This is achieved by diminishing the influence of acoustic propagation losses. As a consequence, is it possible to implement a large bandwidth acousto-optical rf spectrum analyser using fully planar technology.     

Photonic switching in GaAlAs optical strip waveguides by photo-induced electroabsorption

GaAlAs strip waveguides embedded in unbiased pn-junctions are employed for all-optical switching. The underlying physical mechanism is a combination of the photovoltaic effect and the conventional Franz-Keldysh effect, thus it is called the photo-induced Franz-Keldysh effect or photo-induced electroabsorption. Experimental as well as theoretical results are given and show good agreement. In the experiments the transmitted light power of a probe beam is switched by 3 dB due to an injected control beam at input light power levels of about 0.5 mW each. The dynamics of this all-optical switch is limited by RC time constants.     

Low-power continuous-wave four-wave mixing in silicon coupled-resonator optical waveguides

We demonstrate four-wave mixing in silicon-on-insulator coupled-resonator optical waveguides consisting of 35 and 65 microring resonators, using a cw pump with coupled power below 20 mW and observed parametric conversion across more than 10 THz. The conversion efficiency is enhanced by +16 dB relative to a silicon straight waveguide of equivalent length, due to the slowing factor of the coupled-resonator structure.     

Quenched-in deep levels in boron-doped silicon

The DLTS technique was used to study quenched-in deep traps in boron doped silicon crystals, heated at temperatures in the range 700–900°C prior to quenching. The results vary with temperature, demonstrating that the exact temperature up to which the samples are heated prior to quenching plays a determining role on the number of different traps intorduced and their positions in the energy gap, which is often overlooked in the literature.     

Ultracompact and low-power optical switch based on silicon photonic crystals

Switching light is one of the most fundamental functions of an optical circuit. As such, optical switches are a major research topic in photonics, and many types of switches have been realized. Most optical switches operate by imposing a phase shift between two sections of the device to direct light from one port to another, or to switch it on and off, the major constraint being that typical refractive index changes are very small. Conventional solutions address this issue by making long devices, thus increasing the footprint, or by using resonant enhancement, thus reducing the bandwidth. We present a slow-light-enhanced optical switch that is 36 times shorter than a conventional device for the same refractive index change and has a switching length of 5.2 microm.     

Optical wave breaking of high-intensity femtosecond pulses in silicon optical waveguides

We have investigated numerically the propagation of high-intensity femtosecond optical pulses with pulsewidth of 100 fs (half width at 1/e maximum) on the silicon-on-insulator (SOI) optical waveguide when the central wavelength of the pulse locates in the normal dispersion region. Results show that the combined effects of group-velocity dispersion (GVD), third-order dispersion (TOD), self-phase modulation (SPM), and free-carrier dispersion (FCD) can lead to the phenomenon of optical wave breaking that manifests as an asymmetric profile and oscillation near the trailing edge of the pulse. Moreover, the optical wave breaking will be experienced from generation to disappearance during propagation.     

Study of porous silicon optical waveguides impregnated with organic dyes

Planar waveguides were made using oxidised porous silicon layers. Then, they were impregnated with Congo Red or Disperse Red 1 dyes. Optical losses were investigated before and after impregnation. In our case, the losses of impregnated waveguides were always higher than those of non-impregnated ones. In order to achieve a better understanding of the origin of these losses, we not only studied the absorbance of solutions which would impregnate the porous layers but also the reflectance spectra of the obtained composite materials. According to the measurements, the increase in losses in the visible spectrum depends on the intrinsic absorption of the dye while in NIR, the increase would be due to an accumulation of dried dye on the surface of the waveguide which would give rise to the surface scattering losses.     

Fast transient capacitance measurements for implanted deep levels in silicon

The present diffraction problem is solved by means of a perturbation calculus in the transition conditions and by repeated application of the method of steepest descent to two-dimensional Fourier integrals. We obtain a reflection coefficient for the rough surface resulting in a geometrical-optics approximation for the space wave field strength. In the case of a periodic roughness profile the application of the method of steepest descent in the transform space can be avoided and we get the electromagnetic field through differentiation of the Bromwich potentials. The numerical results of the two methods are discussed in the case of a one-dimensional cosine profile. We show that the influence of the earth's roughness increases with increasing receiver heights and fixed receiver distance. On the other hand, we point out that the geometric optical approach is a rather good approximation for the space wave field strength.     

Ultrasmall optical logic gates based on silicon periodic dielectric waveguides

An ultrasmall silicon periodic dielectric waveguides-based multimode interference all-optical logic gate has been proposed. The device consists of three 205 nm wide single-mode input waveguides, a 1.1 μm wide and 5.5 μm long multimode interference waveguide, and three 205 nm wide single-mode output waveguides. The total length and width of the device are 13.7 μm and 3.2 μm, respectively. By changing the states of the input optical signals and/or control signals launched into the device, multifunctional logic functions including OR, NAND, NOR, and NOT gates are performed, and each logic function can be realized at a specific output waveguide in accordance with the launched control signals. The ultrasmall multifunctional logic device has potential applications in high density photonic integrated circuits.     

All-optical switching in silicon photonic crystal waveguides by use of the plasma dispersion effect

Silicon photonic crystals offer new ways of controlling the propagation of light as well as new tools for the realization of high-density optical integration on monolithic substrates. However, silicon does not possess the strong nonlinearities that are commonly used in the dynamic control of optical devices. Such dynamic control is nevertheless essential if silicon is to provide the higher levels of functionality that are required for optical integration. We demonstrate that the combination of the refractive index change caused by the presence of photoexcited carriers, or so-called plasma dispersion, and photonic crystal properties such as photonic bandgaps, constitutes a powerful tool for active control of light in silicon integrated devices. We show close to 100% modulation depth near the photonic crystal band edge.     

Inscription of optical waveguides in crystalline silicon by mid-infrared femtosecond laser pulses

For the first time to the authors' knowledge, optical waveguides have been inscribed in bulk crystalline silicon by ultrafast laser radiation. Femtosecond laser pulses of 40-nm spectral bandwidth, 1-kHz repetition rate, and 1.7-microJ on-target energy were applied at a mid-infrared wavelength of 2.4 microm to induce nonlinear absorption in the focal volume of the beam. By scanning the laser beam with respect to the sample, buried optical waveguides have been created that were single mode at 1550 and 1320 nm and guided light only with its polarization perpendicular to the sample's surface. Propagation losses with an upper limit of 1.2 dB/cm or less were observed throughout the optical telecommunications band.     

Reduction of insertion loss after annealing of silicon oxynitride optical waveguides

The insertion losses of silicon oxynitride (SiON) waveguides have been measured in the 1550 nm wavelength region. The waveguide structure consisted of a 2.0μm SiON waveguide core with a refractive index of 1.50, a 0.5μm SiO₂ upper cladding and a 5.0μm SiO₂ lower cladding with a refractive index of 1.45. It was found that the wavelength-dependent insertion losses of the waveguide were greatly reduced by annealing, and the loss was decreased more than 5.7 dB/cm at 1550 nm after annealing at optimum conditions. The former was attributed to the reduction of the absorption caused by N-H and Si-H vibration modes, and the latter was due to the improvement of the interface roughness and homogeneity in the waveguides after annealing.