壁面轴向导热对微细管内对流换热的影响

本文通过数值解析的方法研究了考虑壁面轴向导热时微细管内的对流换热。结果表明,当管外为对流换热边界条件时,管内充分发展对流换热的Nu依然在3.66～4.36之间。但若忽略壁面轴向导热,采用一维热阻模型整理微细管内对流换热的实验数据将会导致错误的结论。     

Synthesis and properties of aligned ZnO microtube arrays

Two kinds of different aligned zinc oxide (ZnO) crystal microtube arrays were prepared on silicon (1 0 0) substrates by using of a simple thermal chemical reaction vapor transport deposition method. The synthesizing processes were done by using of heating the mixture of zinc oxide and graphite powders at 1150 °C in a quartz tube with one side opened to the air. The O₂ gas (99.9%) and air had been introduced as the assistant gases, respectively. Both the flow rates were 100 ml/min. And the temperature of the Si (1 0 0) substrate region was about 400 °C. There is no other metal catalyst on the Si wafers in the process. After growing for 30 min, one kind of synthesized sample is trumpet-shaped hexagonal microtube arrays assisted with O₂ gas and another produced sample is the uniform hexagonal microtubes only assisted with air. As the increasing of preparing time, their maximal lengths can range from several 10 μm to mm scale. The microstructure, room temperature photoluminescence properties and growth mechanism of both aligned microtube arrays were investigated and discussed.     

Ag微米管阵列修饰的聚合物光子晶体光纤制备工艺研究

以聚合物光子晶体光纤空气孔阵列为模板,制备了Ag微米管阵列修饰的聚合物光子晶体光纤.讨论了银氨溶液和葡萄糖溶液浓度以及反应时间和温度对银微米管形貌的影响.在Ag(NH3)+2与C6H6O浓度比为2,反应时间为20 min,温度为65℃条件下光纤孔洞表面获得了规则的Ag微米管状结构,并对Ag的生长机理进行了讨论.     

Selective polarization mode excitation in InGaAs/GaAs microtubes

We report on selective polarization mode excitation in InGaAs/GaAs rolled-up microtubes. The microtubes are fabricated by selectively releasing a coherently strained InGaAs/GaAs quantum dot layer from its host GaAs substrate. An optical fiber abrupt taper is used to pick up the microtube, while an adiabatically tapered optical fiber is used to couple light into the resonant optical modes of the microtube. By varying the polarization of the light in the adiabatically tapered fiber both transverse electric and transverse magnetic modes are observed in the microtube. We also show that the microtube can be used as a red (0.6?μm) to infrared light (1.5?μm) optical-optical modulator taking advantage of the thermal-optical effect.     

Multiple Ring Discharges in a Cylindrical Resonant Cavity

Observations have been made of an rf multiple-ring discharge which is a variant of the well-known single-ring rf discharge described by J. J. Thomson. A set of discretely-located plasma rings (typically 2 to 5 in number) forms coaxially in the central portion of a cylindrical quartz tube on the axis of a cylindrical cavity excited in the TE011 mode. The rings fit closely inside the inner periphery of the quartz tube at pressures ranging from a few Torr to atmospheric, have a minor diameter of order 1/10 the tube diameter, and are spaced at intervals nearly equal to the tube diameter. Excitation of the degenerate companion TM111 mode results in asymmetrical tilting of the rings. Gas flow through the discharge tube results in a continuous unidirectional axial motion of the rings with new rings being abruptly formed toward the input end of the tube and contracting and vanishing abruptly as they move toward the exit end. A theory is developed which accounts for the observed phenomena.     

Electrical conductivity of individual polypyrrole microtube

Conducting microtubes (0.4－0.5μm in outer diameter) made of polypyrrole (PPy) doped with p-toluene sulfonic acid (PTSA) were synthesized by a self-assembly method. We report the electrical conductivity of an individual PPy microtube, on which a pair of platinum micro-leads was fabricated by focused ion beam deposition. The measured room-temperature conductivity of the individual PPy microtube was 0.29S/cm, which is comparable to that of template-synthesized PPy micro/nanotubes. The temperature dependence of conductivity of the individual microtube follows the three-dimensional variable-range hopping (3D VRH) model.     

Ge(SiO2)n团簇结构和电子性质的密度泛函理论研究

采用密度泛函理论中的广义梯度近似(GGA)对Ge(SiO2)n (n = 1—7)团簇的几何构型进行优化,并对能量、频率和电子性质进行了计算。 结果表明,Ge(SiO2)n的最低能量结构是在(SiO2)n端位O原子以及近邻端位O原子的Si原子上吸附一个Ge原子优化得到;随着锗原子数的增加,增加的锗原子易与原来的锗原子形成锗团簇。掺杂锗原子后团簇的能隙比(SiO2)n团簇的能隙小,当多个Ge原子掺杂到(SiO2)3团簇时,其能隙随着Ge原子个数的增加出现了振荡,Gem(SiO2)3的能隙从可见光区到近红外光区变化。二阶能量差分、分裂能表明Ge(SiO2)2和Ge(SiO2)5团簇是稳定的。     

Experimental Study on Flow and Heat Transfer in a 19.6-μm Microtube

The flow and the heat transfer characteristics in a quartz microtube with an inner diameter of 0.0196 mm are investigated experimentally. Measuring the pressure drop between the inlet and outlet of the microtube and the average temperature of the microtube wall heated by steam when the working fluid is distilled water, the corresponding friction factors and Nusselt number are obtained. The experimental results show the friction factors in the microtube exceed those of the Hagen–Poiseuille prediction due to the predominance of the effects of the electrical double layer and the entrance. Also, the experimental Nusselt number is less than the classical laminar at Reynolds number < 500 due to the effect of the variation of the thermophysical properties with the temperature.     

涡流管冷却的旋转晶体窗口有限元分析

 采用有限元分析方法,考虑到输出窗口在空间上的分布不均匀性,对白宝石、石英晶体窗口在光强分布均匀/不均匀、有/无冷却、是否旋转等各种情况下的温度场进行了分析和讨论。结果表明：当光强分布不均匀时,采用旋转方法能有效地减小温度场的不均匀性;当对输出窗口进行强迫冷却时,输出窗口温度场不均匀性明显减小。因此采用涡流管冷却的旋转晶体窗口能有效改善输出窗口的输出特性。     

涡流管冷却的旋转晶体窗口有限元分析

采用有限元分析方法,考虑到输出窗口在空间上的分布不均匀性,对白宝石、石英晶体窗口在光强分布均匀/不均匀、有/无冷却、是否旋转等各种情况下的温度场进行了分析和讨论.结果表明当光强分布不均匀时,采用旋转方法能有效地减小温度场的不均匀性;当对输出窗口进行强迫冷却时,输出窗口温度场不均匀性明显减小.因此采用涡流管冷却的旋转晶体窗口能有效改善输出窗口的输出特性.     

纳米Zn_2SiO_4∶Mn包覆SiO_2颗粒的制备及表征

采用水热合成方法添加KOH在SiO2颗粒表面包覆Mn2+掺杂纳米Zn2SiO4,通过X射线衍射(XRD)仪、扫描电子显微镜(SEM)、能谱、光致发光(PL)光谱仪对产物的晶体结构、形貌及光学性能进行表征,并对Zn2SiO4晶体在水热反应过程中的反应机制进行了讨论。XRD测试结果表明:220℃水热条件下,添加少量KOH,反应不同时间后,可在石英砂表面生成一层Zn2SiO4;SEM照片显示所生成的Zn2SiO4为六棱柱形,并且不同反应条件下Zn2SiO4的包覆程度不同。反应产物经光致发光性能研究表明:Mn2+掺杂纳米Zn2SiO4包覆SiO2样品中显示两套光致发光谱,一套为250nm左右激发产生的522nm绿色发光带,另一套为340～410nm宽带激发的440nm蓝色发光带,前者为典型的Mn2+离子发光,后者440nm发光带则有可能来源于基体SiO2的氧空位缺陷。     

SiO2薄膜的液相沉积及特性

将基片浸入到低温SiO₂过饱和的六氟硅酸(H₂SiF₆)溶液中,在其表面上沉积SiO₂薄膜。这种新的生长工艺称之为液相沉积(LPD)。本文着重介绍LPD工艺及LPD SiO₂薄膜的特性。     

Dual Template Engaged Synthesis of Hollow Ball‐in‐Tube Asymmetrical Structured Ceria

Hollow materials with different configurations are of interest due to their unique structural features, which induce interesting properties e.g. catalysis. Here, the synthesis of asymmetrical hollow ball‐in‐tube (HBT) structured CeO₂ is reported, which is achieved using a dual template engaged solid–liquid interfacial reaction. In this reaction, the SiO₂ sphere (hard template)‐embedded Ce(OH)CO₃ nanorod (sacrificial template) composite is first treated with NaOH solution, followed by an acid wash to obtain asymmetrical hollow structured CeO₂. Such HBT structured CeO₂ is demonstrated to be a good support for Au nanoparticles toward CO oxidation as compared to simple hollow CeO₂ nanotubes, leading to significantly increase catalytic activity.     

Fill-tube-induced mass perturbations on x-ray-driven, ignition-scale, inertial-confinement-fusion capsule shells and the implications for ignition experiments

On the first inertial-confinement-fusion ignition facility, the target capsule will be DT filled through a long, narrow tube inserted into the shell. microg-scale shell perturbations Delta m' arising from multiple, 10-50 microm-diameter, hollow SiO2 tubes on x-ray-driven, ignition-scale, 1-mg capsules have been measured on a subignition device. Simulations compare well with observation, whence it is corroborated that Delta m' arises from early x-ray shadowing by the tube rather than tube mass coupling to the shell, and inferred that 10-20 microm tubes will negligibly affect fusion yield on a full-ignition facility.     

Semiconducting electronic property of graphene adsorbed on (0001) surfaces of SiO2

First-principles total energy calculations are performed to investigate the energetics and electronic structures of graphene adsorbed on both an oxygen-terminated SiO2 (0001) surface and a fully hydroxylated SiO2 (0001) surface. We find that there are several stable adsorption sites for graphene on both O-terminated and hydroxylated SiO2 surfaces. The binding energy in the most stable geometry is found to be 15 meV per C atom, indicating a weak interaction between graphene and SiO2 (0001) surfaces. We also find that the graphene adsorbed on SiO2 is a semiconductor irrespective of the adsorption arrangement due to the variation of on-site energy induced by the SiO2 substrate.     

掺杂Si/SiO_2界面电子结构与光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理方法,在局域密度近似(LDA)下研究了B掺杂Si/SiO_2界面及其在压强作用下的电子结构和光学性质.能带的计算结果表明:掺杂前后Si/SiO_2界面均属于直隙半导体材料,但掺B后界面带隙由0. 74 eV减小为0. 57 eV,说明掺B使材料的金属性增强;对B掺杂Si/SiO_2界面施加正压强,发现随着压强不断增大,Si/SiO_2界面的带隙呈现了逐渐减小的趋势,并且由直隙逐渐转变为间隙.光学性质的计算结果表明:掺B对Si/SiO_2界面在低能区(即红外区)的介电函数虚部、吸收系数、折射率以及反射率等光学参数有显著影响,且在红外区出现新的吸收峰;对B掺杂Si/SiO_2界面施加正压强,随着压强增大,红外区的吸收峰逐渐消失,而在紫外区出现了吸收峰.上述结果表明,对Si/SiO_2界面掺B及施加正压强均可调控Si/SiO_2界面的电子结构与光学性质.本文的研究为基于Si/SiO_2界面的光电器件研究与设计提供一定的理论参考.     

Influence of APS bias voltage on properties of HfO_2 and SiO_2 single layer deposited by plasma ion-assisted deposition

HfO2 and SiO2 single layer is deposited on glass substrate with plasma ion assistance provided by Leybold advanced plasma source (APS). The deposition is performed with a bias voltage in the range of 70-130 V for HfO2, and 70-170 V for SiO2. Optical, structural, mechanical properties, as well as absorption and laser induced damage threshold at 1064 nm of HfO2 and SiO2 single layer deposited with the plasma ion assistance are systematically investigated. With the increase of APS bias voltage, coatings with higher refractive index, reduced surface roughness, and higher laser-induced damage threshold (LIDT) are obtained, and no significant change of the absorption at 1064 nm is observed. For HfO2, a bias voltage can be identified to achieve coatings without any stress. However, too-high bias voltage can cause the increase of surface roughness and stress, and decrease the LIDT. The bias voltage can be properly identified to achieve coatings with desired properties.     

插指型SiO_2电流阻挡层对大功率LED外量子效率的影响

为了改善蓝光大功率LED芯片p电极处的电流拥挤现象,提高大功率LED芯片的外量子效率,在ITO透明导电层与p-GaN间沉积插指型SiO_2电流阻挡层。采用等离子体增强化学气相沉积的方法沉积SiO_2薄膜,再经过光刻和BOE湿法刻蚀技术制备插指型SiO_2电流阻挡层。采用SimuLED仿真软件分析插指型SiO_2电流阻挡层对大功率LED芯片电流扩展性能的影响,研究插指型SiO_2电流阻挡层对大功率LED芯片外量子效率的影响。结果发现,插指型SiO_2电流阻挡层结构可以有效改善p电极附近的电流拥挤现象。与没有沉积插指型SiO_2电流阻挡层的大功率LED芯片相比,光输出功率得到显著的提高。在350 mA的输入电流下,沉积插指型SiO_2电流阻挡层后的大功率LED芯片的外量子效率提高了18.7%。     

Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography

Wafer-scale SiO2 photonic crystal （PhC） patterns （SiO2 air-hole PhC, SiO2-pillar PhC） on indium tin oxide （ITO） layer of GaN-based light-emitting diode （LED） are fabricated via novel nanospherical-lens lithography. Nanoscale polystyrene spheres are self-assembled into a hexagonal closed-packed monolayer array acting as convex lens for expo- sure using conventional lithography instrument. The light output power is enhanced by as great as 40.5% and 61% over those of as-grown LEDs, for SiO2-hole PhC and SiO2-pillar PhC LEDs, respectively. No degradation to LED electrical properties is found due to the fact that SiO2 PhC structures are fabricated on ITO current spreading electrode. For SiO2- pillar PhC LEDs, which have the largest light output power in all LEDs, no dry etching, which would introduce etching damage, was involved. Our method is demonstrated to be a simple, low cost, and high-yield technique for fabricating the PhC LEDs. Furthermore, the finite difference time domain simulation is also performed to further reveal the emission characteristics of LEDs with PhC structures.     

SiO2薄膜的液相沉积及特性

将基片浸入到低温SiO2过饱和的六氟硅酸（H2SiF6)溶液中,在其表面上沉积SiO2薄膜,这种新的生长工艺称之为液相沉积（LPD）。本文着重介绍LPD工艺及LPDSiO2薄膜的特性。