量子化极限情况下MOS反型层二维电子气定域态电子电导率σ_(xx)的低频效应

本文分析了量子化极限情况下MOS反型层二维电子气(2DEG)定域态电子电导率的频率特性。主要内容:(1)用费密分布函数随频率变化导出了在2DEG两种主要导电过程的频率特性。即向迁移率边激发导电过程电导率σ_(ME)(ω)和可变程跳跃导电过程电导率σ_(VRH)(ω)。发现:σ_(ME)(ω)和σ_(VRH)(ω)是一个复数。(2)说明了σ_(ME)(ω)有较长时间常数τ_n,对应一个低频过程。σ_(VRH)(ω)有较短时间常数,对应一个高频过程。(3)理论与实验作了比较,拟合结果表明,在实验条件下,向迁移率边E_c激发时间常数τ_n3.6×10~(-6)。     

聚苯胺基固态染料敏化太阳电池中电子输运性能的研究

以导电聚苯胺为空穴传输材料，制备了固态染料敏化太阳电池(DSC).利用强度调制光电流谱(IMPS)和强度调制光电压谱(IMVS)研究了TiO₂多孔膜内的电子输运及复合过程.通过TiO₂多孔膜内电子的平均传输时间(τ_d)和电子寿命(τ_n)及对IMPS实验数据的拟合，获得电子在TiO₂膜内的有效扩散系数(D_n)和扩散长度(L_n).这些聚苯胺基电池中的τ_n值为相应的液体型电池的1/10倍左右，表明在该固体电池中存在严重的光生电子的复合过程，这很可能主要是与氧化态染料分子和导电电子间的复合有关.随着TiO₂膜厚的增加，τ_n和τ_d均变小，但D_n和L_n随之增加，只有在合适的膜厚范围内才能获得较高的光伏性能. 关键词： 聚苯胺 染料敏化太阳电池 IMPS IMVS     

一种具有次近邻相互作用的Transverse XY模型

本文推广Transverse XY模型量子链至次近邻相互作用情况,考虑哈密顿量 H=g∑_nσ_n²-∑_n ((1+γ)/2σ_n^xσ_n+1^x+(1-γ)/2σ_n^yσ_n+1^y)-λ∑_n ((1+β)/2σ_n^xσ_n+2^x+(1-β)/2σ_n^yσ_n+2^y)。当β=0以及γ≠0时,证明在临界点附近它对应于一自由费密场,从而属伊辛普适类。 关键词：     

过渡金属氧化物界面二维电子气及其超导电性研究

过渡金属氧化物异质界面形成的二维电子气(2DEG)因其丰富的物理性质而备受研究人员关注,其中最具代表性的是能带绝缘体LaAlO₃和SrTiO₃形成的界面.此界面高迁移率的2DEG展现出超导电性、铁磁性、超导和铁磁共存等性质,其他过渡金属氧化物界面系统也显示出高迁移率和类似的新奇量子现象.本文主要介绍过渡金属氧化物异质界面2DEG的超导电性及其研究进展,并着重展示近年来北京师范大学在本领域取得的研究成果.     

激光拍频波加速器的参数选择

本文研究了激光拍频波加速器中的三波相互作用过程。结果表明:适当地选择参数σ=ω_p/(ω₁-ω₂)以及β=ω₂/ω₁(ω_p,ω₁,ω₂分别为等离子体频率及两束激光频率),即可用较弱的激光造成很强的拍频等离子体波,并使注入等离子体的电子获得显著的能量增益。 关键词：     

内嵌InAs量子点的δ掺杂GaAs/AlxGa1-xAs二维电子气特性分析

采用分子束外延技术对δ掺杂GaAs/Al_xGa_1-xAs二维电子气(2DEG)样品进行了生长. 在样品生长过程中, 分别改变掺杂浓度(N_d)、空间隔离层厚度(W_d) 和Al_xGa_1-xAs中Al组分(x_Al)的大小, 并在双温(300 K, 78 K)条件下对生长的样品进行了霍尔测量; 结合测试结果, 分别对N_d, W_d及x_Al与GaAs/Al_xGa_1-xAs 2DEG的载流子浓度和迁移率之间的关系规律进行了细致的分析讨论. 生长了包含有低密度InAs量子点层的δ掺杂GaAs/Al_xGa_1-xAs 2DEG 样品, 采用梯度生长法得到了不同密度的InAs量子点. 霍尔测量结果表明, 随着InAs量子点密度的增加, GaAs/Al_xGa_1-xAs 2DEG的迁移率大幅度减小, 实验中获得了密度最低为16×10⁸/cm²的InAs量子点样品. 实验结果为内嵌InAs量子点的δ掺杂GaAs/Al_xGa_1-xAs 2DEG的研究和应用提供了依据和参考. 关键词： 二维电子气 InAs量子点 载流子浓度 迁移率     

应变层超晶格(InAs)n(InP)n(001)电子结构的LMTO计算

基于Linearized-Muffin-Tin Orbitals(LMTO)能带方法,采用内部求和计入空d轨道的处理,对(InAs)_n(InP)_n(001),(n=1,2,3)应变层超晶格的电子结构进行了第一性原理计算。得出了其能带结构,态密度分布(对n=1)。考察了In4d轨道对能带计算的影响,并采用冻结势方法求出了(InAs)_n(InP)_n(001),(n=1,2,3)的价带边不连续值△E_v。 关键词：     

AlN/β-Ga2O3异质结电子输运机制

β-Ga₂O₃具有禁带宽度大、击穿电场强的优点,在射频及功率器件领域具有广阔的应用前景.β-Ga₂O₃(201)晶面和AlN(0002)晶面较小的晶格失配和较大的导带阶表明二者具有结合为异质结并形成二维电子气(twodimensional electron gas,2DEG)的理论基础,引起了众多研究者关注.本文利用AlN的表面态假设,通过求解薛定谔-泊松方程组计算了AlN/β-Ga₂O₃异质结导带形状和2DEG面密度,并将结果应用于玻尔兹曼输运理论,计算了离化杂质散射、界面粗糙散射、声学形变势散射、极性光学声子散射等主要散射机制限制的迁移率,评估了不同散射机制的相对重要性.结果表明,2DEG面密度随AlN厚度的增加而增加,当AlN厚度为6 nm,2DEG面密度可达1.0×10¹³ cm^-2,室温迁移率为368.6 cm²/(V.s).在T<184 K的中低温区域,界面粗糙散射是限制2...     

(GaAs)n(n=1-4)原子链电子输运性质的理论计算

本文利用密度泛函理论结合非平衡格林函数的方法, 对 (GaAs)_n(n=1-4)直线原子链与Au(100)-3×3两半无限电极耦合构成Au-(GaAs)_n-Au纳米结点的电子输运性质进行了第一性原理计算. 在各结点拉伸过程中, 对其结构进行了优化, 得到各结点稳定平衡结构时Ga-As的平均键长分别为0.220, 0.224, 0.223, 0.223 nm, 平衡电导分别为2.328G₀, 1.167G₀, 0.639G₀, 1.237G₀; 通过对结点投影态密度的计算, 发现电子传输主要是通过Ga, As原子中p_x与p_y电子轨道相互作用形成的π键进行的. 在0-2 V的电压范围内, 对于(GaAs)_n(n=1-3)的原子链的电流随电压增大而增大, I-V曲线呈线性关系, 表现出类似金属导电行为; 对于(GaAs)₄原子链在0.6-0.7 V, 0.8-0.9 V的电压范围内却存在负微分电阻现象.     

方波驱动法测定Alq3的电子迁移率

在非正弦波(方波)的驱动下,观察到了OLED中Alq₃的电致发光现象。在高段方波驱动下,Alq₃中的电子向阳极移动;在低段方波驱动下,Alq₃中的电子向阴极移动。当方波的周期是电子穿过Alq₃中所用时间的2倍时,Alq₃中的电致发光现象完全消失。由此,可以计算出Alq₃中的电子迁移率,得到的结果和文献的报道值相吻合。对Alq₃中电子迁移率和厚度的关系进行了研究,从而提出了一种简单易行的计算有机材料的电子迁移率的方法。     

On the dynamic conductivity for an electron-impurity system

The correlation function formula for the dynamic conductivity of a system of non-interacting electrons in the field of impurities is analyzed in terms of proper connected diagrams. By selecting those diagrams appropriate in the region of weak coupling and low impurity concentration, a set of coupled equations for the energy broadening γ (ω, ε, n_s) and the energy shift Δ(ω, ε, n_s) is derived, where both γ and Δ depend on the frequency ω of a probing field, the energy ε of the electron, and the concentration, n_g, of impurities. With the assumption of a finite range potential, these equations are solved. It is found that γ (ω, n_s) is smaller than that extrapolated value which the conventional expression γ₀ for the low-concentration collision frequency would predict, in the entire region studied, that the difference γ₀-γ becomes appreciable when the ratio of the average time between scatterings, τ_c, to the average duration of a scattering, τ_d, is 100 or less, that γ (ω, n_s) decreases monotonically from its static value γ (0, n_s), and becomes vanishingly small in the region ω≈1/τ_d, and that in the static limit (ω=0), γ=γ₀[1?(2/π) (γ₀τ_d)+…], that the energy shift Δ is positive, and increases from 0 and reach a peak of magnitude γ₀ as ω is raised from 0. By using the γ and Δ obtained, the dynamic conductivity σ(ω, n_s) for degenerated electrons is calculated. The deviation, σ-σ₀, from the conventional expression σ₀=(?i) (n_ee²/M) [ω-iΓ₀]^?1, (n_e]=number density of electrons), for 0°K, is appreciable when the ratio τ_c/τ_d is 100 or less. The field-term correction, which arises from the modification of the scattering due to the probing field, is found to be negligible in the entire region studied.     

Dielectric relaxation and ac conductivity of sodium tungsten phosphate glasses

Studies of dielectric relaxation and ac conductivity have been made on three samples of sodium tungsten phosphate glasses over a temperature range of 77–420 K. Complex relative permitivity data have been analyzed using dielectric modulus approach. Conductivity relaxation frequency increases with the increase of temperature. Activation energy for conductivity relaxation has also been evaluated. Measured ac conductivity (σ_m(ω)) has been found to be higher than σ_dc at low temperatures whereas at high temperature σ_m(ω) becomes equal to σ_dc at all frequencies. The ac conductivity obeys the relation σ_ac(ω)=Aω ^S over a considerable range of low temperatures. Values of exponent S are nearly equal to unity at about 78 K and the values decrease non-linearly with the increase of temperature. Values of the number density of states at Fermi level (N(E _F)) have been evaluated at 80 K assuming values of electron wave function decay constant α to be 0.5 (Å)^?1. Values of N(E _F) have the order 10²⁰ which are well within the range suggested for localized states. Present values of N(E _F) are smaller than those for tungsten phosphate glasses.     

Electrical conductivity and dielectric relaxation studies of a polymeric hybrid compound: ([C2H10N2]CdCl2(SCN)2)n

Electrical conductivity and dielectric measurements of ([C₂H₁₀N₂]CdCl₂(SCN)₂)_n were carried out from 200 Hz–5 MHz over a temperature range of 307–352 K. The frequency dependence of electrical data have been analyzed in two frameworks: the electrical modulus formalism with the Kohlrausch-Williams-Watts (KWW) stretched exponential function and the electrical conductivity by using the Jonscher’s power law σ′_Tot(ω,T) = σ_DC(T) + A(T)ω^s(T) in the frequency domain. The conduction mechanism is attributed to the nonoverlapping small polaron tunneling (NSPT) model. Furthermore, the dielectric data have also been analyzed in modulus and polarizability formalisms. The close values of activation energies obtained from the conductivity, the relaxation process, the electric modulus, and the complex polarizability data confirm that the transport is through ion-hopping mechanism.     

The determination of hopping rates and carrier concentrations in ionic conductors by a new analysis of ac conductivity

The a.c. conductivity σ(ω) of ionic materials takes the form, σ(ω) = σ(0) + Aωⁿ. The carrier hopping rate, ω_p, is obtained from the new expression σ(0) = A ω_pⁿ and the carrier concentration is estimated from σ(0). The contribution of creation and migration terms to the activation energy for conduction may be determined from the thermal activation of σ(0) and ω_p and the corresponding entropy terms quantified. Data have been analyzed for four widely different ionic materials: single crystal Na β-alumina, polycrystalline Li₄SiO₄, Ag₇l₄AsO₄ glass and Ca(NO₃)₂/KNO₃ glass and melt. For each, the carrier concentration and hopping rates have been obtained.     

Frequency Dependence of the Dielectric Loss Angle in Disordered Semiconductors in the Terahertz Frequency Range

Frequency dependence of the real part of the conductivity σ₁(ω) in the region of the transition from almost linear (s < 1) to quadratic (s ≈ 2) can indicate a change in the conduction mechanism (the transition from the variable-range to the fixed-range hopping with increasing frequency); in this case, the sharpness of the change in the slope of the frequency characteristic is related to the dependence of the preexponential factor of the resonance integral on the intercenter distance in the pair. The frequency dependence of the imaginary part of the conductivity σ₂(ω) has no kink in the vicinity of the transition frequency ωcr, remaining almost linear. A large dielectric loss angle |cotγ| = |σ₂|/σ₁ can indicate that the imaginary part of the conductivity at ω < ω_cr is defined by the larger zero-phonon contribution in σ₂^res the region of weak variation in the loss angle γ(ω), which significantly exceeds the relaxation contribution σ₂^res.     

CdTe的能带与光学特性的研究

报道用正交化线性组合原子轨道(OLCAO)方法计算的CdTe的能带结构,结果与线性缀加平面波(LAPW),线性丸盒轨道-原子球近似(LMTO-ASA)以及非局域化经验赝势(NL-EPM)所得的结果相近。同时还叙述与CdTe的光学特性有关的一些物理量的计算结果,它们是介电函数虚部∈₂(ω),高频电导率虚部σ₁(ω)以及反射率谱R(ω)。 关键词：     

托卡马克的反常电子输运定标律

本文假设导致托卡马克反常电子输运的主要机制为由温度梯度所驱动的重整化电子磁漂移波。通过求解动力学过程自洽地导出了反常电子输运系数的定标律:D^(T)=(c/ω_pe)²{((v_e/qR)²/2π+(v_{c/2)²)^1/2-vc/2}。它在数值上与现有实验给出的AIcator定标律符合。在无碰撞(vc→0)情况下与Ohkawa定标津一致。同时分析了该定标律与Alcator定标律的偏离,并由此讨论了强磁场欧姆加热托卡马克达到热核点火的可能性。 关键词：}     

Temperature dependence of the a.c. conductivity of Naβ-alumina

Low temperature a.c. conductivity of β-alumina is of the form σ(ω) = σ(ω) + Aωⁿ. Both σ(0) and A are found to be thermally activated. Simple relationships, dependent on the value of n, are shown to exist between (i) the relative magnitudes of σ(0) and A and (ii) their respective activation energies.     

倾转晶体电子衍射图的自动标定

用电子计算机标定倾转晶体电子衍射斑点指数的计算公式如下:[hkl]=[xy0]Γ^(θ)Γ^(ω₀-ω)Γ^(θ₀)P^-1H,其中θ,ω为倾转角,θ₀,ω₀为初始倾转角。一个适合于任意晶系的计算机程序已经编写出来。与极图法比较起来,用计算机标定既简便又迅速。 关键词：     

非线性电子磁漂移波

本文采用重整化方法处理了无剪切磁场漂移近似下的非线性电子磁漂移波,并分析了它与托卡马克电子反常输运之间的关系。所得到的扩散系数D_⊥～(ω_pe(T_e/cB₀L_nk_⊥²)与现有托卡马克实验结果大致符合。 关键词：