Characterisation of semiconducting V2O5–Bi2O3–TeO2 glasses through ultrasonic measurements

Tellurite containing vanadate (50−x)V₂O₅–xBi₂O₃–50TeO₂ glasses with different bismuth (x=0, 5, 10, 15, 20 and 25 wt%) contents have been prepared by rapid quenching method. Ultrasonic velocities (both longitudinal and shear) and attenuation (for longitudinal waves only) measurements have been made using a transducer operated at the fundamental frequency of 5 MHz in the temperature range from 150 to 480 K. The elastic moduli, Debye temperature, and Poisson’s ratio have been obtained both as a function of temperature and Bi₂O₃ content. The room temperature study on ultrasonic velocities, attenuation, elastic moduli, Poisson’s ratio, Debye temperature and glass transition temperature show the absence of any anomalies with addition of Bi₂O₃ content. The observed results confirm that the addition of Bi₂O₃ modifier changes the rigid formula character of TeO₂ to a matrix of regular TeO₃ and ionic behaviour bonds (NBOs). A monotonic decrease in velocities and elastic moduli, and an increase in attenuation and acoustic loss as a function of temperature in all the glass samples reveal the loose packing structure, which is attributed to the instability of TeO₄ trigonal bipyramid units in the network as temperature increases. It is also inferred that the glasses with low Bi₂O₃ content are more stable than with high Bi₂O₃ content.     

Local structure of liquids Al2O3 and GeO2 under densification

Molecular dynamic simulation has been conducted to study the local structure of liquid Al₂O₃ and GeO₂ under densification. Those liquids are found to be a mixture of species of TO_x. Here T is Ge or Al and x = 4, 5 and 6. This result is supported by the fact that the density, fraction of oxygen connectivity and volume of different void kinds are a linear function of TO_x fraction. The microscopic mechanism of liquid densification is quantified and interpreted in term of the change in TO_x fraction.     

NMR studies of Na2O---B2O3---SiO2 glasses of mid-alkali content

¹¹B Fourier transform spectra have been used to study the structure of Na₂O---B₂O₃---SiO₂ glasses of mid-alkali content. Based on the measurements of the fraction N₄ of four-coordinated borons, it has been found that for K = mol.% SiO₂/mol.% B₂O₃ 8 and R = mol.% Na₂O/mol.% B₂O₃ = 1, N₄ is obviously smaller than 1 rather than equal to 1 as assumed in the relevant literature. Only when R reaches a value appropriately greater than 1, can the case where N₄ = 1 occur. A structural model suggested in this paper can satisfactorily explain the fact.     

Magnetic susceptibility of sodium disilicate glasses containing PuO2

A solubility limit of ≈6 mol% PuO₂ in sodium disilicate (Na₂O · 2 SiO₂) glass has been determined. Magnetic susceptibility measurements on these glasses yield approximate Curie—Weiss behavior, in contrast to the temperature-independent susceptibility of crystalline PuO₂. This result is interpreted to indicate that the local site symmetry around the Pu ion in the sodium disilicate glass is very different than in crystalline PuO₂. The effective paramagnetic moments determined from the temperature dependence of the susceptibility are found to be consistent with calculated free-ion values based on the most likely 5f electron configurations.     

An X-ray diffraction study of the structure of B2O3---Cs2O liquids

The short range structures of B₂O₃ (90 mol%)---Cs₂O (10 mol%) and B₂O₃ (80 mol%)---Cs₂O (20 mol%) liquids were analyzed at 973 and 1053 K, respectively, by an X-ray diffraction method, and the effects of Cs₂O addition on the boron-oxygen bonding were investigated. The existence of BO₃ triangles, which form the so-called boroxol ring structure, was confirmed in B₂O₃---Cs₂O liquids, as well as in B₂O₃ liquid, but some fraction of the BO₃ triangles was thought to be converted to BO₄ tetrahedra. Similar results have previously been observed also in B₂O₃---Cs₂O glasses. A Cs atom was found to be surrounded by six O atoms; four Cs---O interatomic distances were about 3.2 Å but the other two were at 3.8–3.9 Å. These distances indicate that distorted Cs---O octahedra may exist in these B₂O₃---Cs₂O liquids.     

Mössbauer studies on some glasses and crystals in the Na2O---Fe2O3---SiO2 system

Mössbauer absorption measurements have been made at room temperature on ⁵⁷Fe in iron sodium silicate glasses containing 3–15 mol% Fe₂O₃ and various iron alkali silicate crystals in order to study the state of iron in these glasses. The spectra of all the glasses gave one doublet with a quadrupole splitting varying from 0.73–0.78 mm s⁻¹, while those of Na₂O · Fe₂O₃ · 4 SiO₂ and 5 Na₂O · Fe₂O₃ · 8 SiO₂ crystals showed much smaller quadrupole splitting, 0.28 mm s⁻¹ and 0.10 mm s⁻¹, respectively, and an asymmetrical doublet of much narrower linewidth. When sodium was replaced by other alkali metals of larger size, such as K and Cs, in MFeSi₂O₆ and MFeSi₃O₈ crystals, the quadrupole splitting became wider and approached to 0.73 mm s⁻¹. Such a variation was not observed for glasses. These results suggest that a larger number of non-identical sites exist in iron sodium silicate glasses than in the corresponding crystals.     

The short-range order in ternary ZrF4---BaF2---ErF3 glasses

The short-range order structures in ternary ZrF₄---BaF₂---ErF₃ glasses have been studied by X-ray absorption fine structure (XAFS). The near-neighbor structures around Zr, Ba and Er have been determined and compared with that in binary ZrF₄---BaF₂ glasses. The near-neighbor structures around Zr and Ba are scarcely affected by doping with ErF₃. The structural parameters of near neighbors around Er in the glasses are near to that in ErF₃, but the corresponding distance and coordination number of near neighbors in the glasses decrease slightly. It is also observed that the intensities of the white lines at the Er L and L absorption edges in these glasses are different from that in c-ErF₃. Meanwhile, compared with that of the corresponding fluoride, the changes of the ‘white line’ at the Er L_,-edges in the glasses differ from the case of Nd. The causes leading to these differences are discussed.     

Microstructure and ferroelectric properties of BaTiO3 films on LaNiO3 buffer layers by rf sputtering

We have fabricated LaNiO₃ and BaTiO₃ films using the rf sputtering method. The LaNiO₃ were deposited on Si substrates, demonstrating a (1 0 0) highly oriented structure and nanocrystalline characteristic with a grain size of 30 nm. The BaTiO₃ thin films were deposited on the LaNiO₃ buffer layers, and have exhibited a (1 0 0) texture with a thickness of 400 nm. A smooth interface is obtained between the LaNiO₃ bottom electrode and the BaTiO₃ film from cross-section observations by scanning electron microscopy. The bi-layer films show a dense and column microstructure with a grain size of 60 nm. Ferroelectric characterizations have been obtained for the BaTiO₃ films. The remnant polarization and coercive field are 2.1 μC/cm² and 45 kV/cm, respectively. The leak current measurements have shown a good insulating property.     

Al2O3-TiO2 and Al2TiO5 ceramic materials by the sol-gel process

Ceramic materials with a very low thermal expansion coefficient are synthesized by the sol-gel process. The binary gel is obtained by hydrolysis and polycondensation reactions of organometallic compounds of aluminium and titanium. The thermal evolution of the amorphous powder is followed by DTA and TGA measurements. Structural evolution is followed using X-ray diffraction. The crystallization of the TiO₂ rutile and Al₂O₃ corindon starts at 700 and 900°C respectively. The transformation of Al₂O₃ and TiO₂ into Al₂TiO₅ appears between 1200 and 1300°C. The densification of the powder is performed by the hot pressing process. The shrinkage of the powder was previously followed by dilatometric measurements. The physical properties of the final material are studied as a function of pressing parameters.     

Hydrolytic resistance of Na2O---B2O3---SiO2 gels prepared by sol-gel process

Alkoxide derived gels were prepared in the system Na₂O---B₂O₃---SiO₂. The gel compositions were situated in the liquid-liquid immiscibility area of the phase equilibrium diagram.

Hydrolytic resistance tests were performed on the gels heat-treated at temperatures ranging between 120 to 850 °C. The Na₂O, B₂O₃ and SiO₂ extracted from the attack gels were analyzed. The experimental results indicate that the amount of B₂O₃ has a significant influence on the chemical durability of the heat-treated gels. At temperatures of 850 °C the greater the B₂O₃ mol% the greater are the amounts of Na₂O and B₂O₃ extracted. Different behaviour was observed for gels heat-treated at 600 °C where the amounts of B₂O₃ and Na₂O extracted slightly increases as the B₂O₃ mol% increases. Small amounts of extracted SiO₂ were always observed.

These results are complemented with other measurements so that an explanation of the controlling mechanism is given.     

Wavelength selective materials modification of bulk As2S3 and As2Se3 by free electron laser irradiation

In this study we report first measurements of wavelength-selective infrared-induced materials modification of bulk As₂S₃ and As₂Se₃. These materials are currently being considered as candidate materials for infrared optical fiber transmission in the range of 1–10 μm. Our study is aimed at modifying oxygen, hydrogen and carbon impurities bound to chalcogenide constituent elements in the materials to reduce absorption. Tunable infrared radiation from the W.M. Keck Free Electron Laser (FEL) at Vanderbilt was used to excite specific vibrational modes, S–O–H and CH_x modes in bulk As₂S₃ and Se–H, CH_x and S–H₂ modes in bulk As₂Se₃. Changes in vibrational mode amplitudes are monitored by measuring the intensity of the Fourier transform infrared (FTIR) spectra before and after irradiation at appropriate wavelengths. By tuning wavelengths to hydrogen vibrational modes, we find evidence that hydrogen is released and/or redistributed athermally. In particular, following irradiation at specific resonant wavelengths, vibrational mode amplitudes as monitored by FTIR associated with CH_x are significantly reduced in bulk As₂S₃ and As₂Se₃ samples. In As₂S₃, the changes in CH_x modes are reversed by heat treatment at 115°C for 35 min in nitrogen atmosphere.     

X-ray diffraction measurements for liquid As2Se3 up to the semiconductor-metal transition region

X-ray diffraction measurements were performed for liquid (1-) As₂Se₃ at temperatures and pressures up to 1500°C and 70 bar. A high-pressure vessel and a sapphire sample cell were developed, according to the authors' own design, for measurements using the energy-dispersive method. The structure factor becomes broadened with increasing temperature and changes significantly at about 1000°C accompanied by the semiconductor-to-metal (SC-M) transition; the first sharp diffraction peak around 1.2Å⁻¹ disappears and the second and third maxima merge. The nearest-neighbor distance and the average coordination number start to increase when the SC-M transition occurs. The density of 1-As₂Se₃ in the temperature and pressure range up to 1600°C and 700 bar, respectively, were also measured by the X-ray absorption method. A volume contraction occurs in the SC-M transition region.     

Epitaxial growth of the CoFe2O4 film on SrTiO3 and its characterization

Cobalt ferrite (CoFe₂O₄) thin film is epitaxially grown on (0 0 1) SrTiO₃ (STO) by laser molecular beam epitaxy (LMBE). The growth modes of CoFe₂O₄ (CFO) film are found to be sensitive to laser repetition, the transitions from layer-by-layer mode to Stranski–Krastanov (SK) mode and then to island mode occur at the laser repetition of 3 and 5 Hz at 700 °C, respectively. The X-ray diffraction (XRD) results show that the CFO film on (0 0 1) SrTiO₃ is compressively strained by the underlying substrate and exhibits high crystallinity with a full-width at half-maximum of 0.86°. Microstructural studies indicate that the as-deposited CFO film is c-oriented island structure with rough surface morphology and the magnetic measurements reveal that the compressive strained CoFe₂O₄ film exhibits an enhanced out-of-plane magnetization (190 emu/cm³) with a large coercivity (3.8 kOe).     

Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors

In this study, the use of novel, liquid, organic arsenic precursors as substitutes for the highly toxic hydride gas arsine (AsH₃) in low pressure metalorganic vapor phase epitaxy (LP-MOVPE) of (GaIn)As lattice matched on InP has been investigated. The model precursors out of the classes of (alkyl)3-nAsH_n (n = 0,1,2) are tertiarybutyl arsine (TBAs), ditertiarybutyl arsine (DitBAsH) and diethyltertiarybutyl arsine (DEtBAs). The MOVPE growth has been investigated in the temperature range of 570–650°C using V/III ratios from 2 to 20. The obtained epitaxial layer quality as examined by means of optical and scanning electron microscopy (SEM), high resolution double crystal X-ray diffraction, temperature-dependent van der Pauw-Hall, as well as photoluminescence (PL) measurements, will be compared for the different source molecules. Under optimized conditions almost uncompensated n-type (GaIn)As layers with carrier concentrations below 1 × 10¹⁵ cm⁻³ and corresponding mobilities above 80 000 cm²/V · s have been realized. For TBAs and DitBAsH in combination with the corresponding P sources TBP and DitBuPH, respectively, we have worked out a process parameter area for the growth of layers with device quality, as proven by the realization of a pin-detector structure.     

Study of electrical properties of MoO3–Fe2O3–P2O5 and SrO–Fe2O3–P2O5 glasses by impedance spectroscopy. II

The electrical and dielectric properties for three series of MoO₃–Fe₂O₃–P₂O₅ and one series of SrO–Fe₂O₃–P₂O₅ glasses were measured by impedance spectroscopy in the frequency range from 0.01 Hz to 3 MHz and over the temperature range from 303 to 473 K. It was shown in Part I that the MoO₃ is incorporated into phosphate network and the structure/properties are strongly influenced by the overall O/P ratio. The Fe₂O₃ content and Fe(II)/Fe_tot ratio in these glasses have significant effects on the electrical conductivity and dielectric permittivity. With decreasing Fe₂O₃ content in MoO₃–Fe₂O₃–P₂O₅ glasses with O/P at 3.5 the dc conductivity, σ_dc(ω) decreases for two orders of magnitude, which indicates that the conductivity for these glasses depends on Fe₂O₃ and is independent of the MoO₃ content. Also, the dielectric properties such as ^′(ω), ^″(ω) and σ_ac(ω) and their variation with frequency and temperature indicates a decrease in relaxation intensity with increase in the concentration of MoO₃. On the other hand, the dc conductivity for MoO₃–Fe₂O₃–P₂O₅ glasses with O/P > 3.5 increases with the substitution of MoO₃ which has been explained by an increase in the number of non-bridging oxygens and formation of Fe–O–P bonds that are responsible for formation of small polarons. The increase in the dielectric permittivity, ^′(ω) with increasing MoO₃ content is attributed to the increase in the deformation of glass network with increasing bonding defects. For SrO–Fe₂O₃–P₂O₅ glasses the conductivity and dielectric permittivity remained constant with increasing SrO.     

A SAXS study of V2O5·nH2O sols and gels

Small-angle X-ray scattering (SAXS) measurements on V₂O₅·nH₂O sols and gels, prepared by dissolving V₂O₅ glass into water at room temperature, show that there are V₂O₅ polymeric fibers entangled like random coils in the sol of n 5000, while the deviation from the random coil behavior occurs in the dilute sol of n 6000.

A Bragg peak appears at the scattering vector h 0.02 Å⁻¹ to be superimposed on an asymptotic h⁻²-course in the SAXS curve of the concentrated sol of n 680. This means that the spatial correlation between V₂O₅ polymeric fibers takes place even in the fluid state.

V₂O₅·nH₂O sols completely lose fluidity at n 250 to transfer to the gel state, where V₂O₅ polymeric fibers begin to pile up in the parallel with a substrate surface. Such a layer structure is preserved up to the gel of n 4. However, V₂O₅ polymeric fibers are randomly oriented within each layer.     

Crystallization, neutron irradiation, and annealing studies in glassy Ti50Be40Zr10

We have studied the crystallization and the effects of neutron irradiation and annealing on glassy Ti₅₀Be₄₀Zr₁₀ (Metglas 2204) using resistivity measurements. The resistivity was measured from 2–1000 K for as-received Metglas 2204. Jumps in the resistivity were observed at the various stages during the crystallization process in agreement with previously reported results. Further, the negative temperature dependence of resistivity is affected by neutron irradiation and annealing. In both cases, interpretation of the results in terms of the Ziman theory of liquid metals indicates that the structure factor has sharpened. In the neutron irradiation case the structural relaxation is most likely the result of radiation enhanced diffusion due to the formation of vacancies.     

Growth twins in self-frequency doubling laser crystal YbxY1−xAl3(BO3)4

Using chemical etching.method, the growth twins in self-frequency doubling laser crystal Yb_xY_1−xAl₃(BO₃₄ have been observed. The etching pits on both sides of growth twin boundaries in the (10 1) slice are of the triangles with different orientations. The structure of growth twins is investigated by transmission synchrotron topography. In the transmission synchrotron topograph, the growth twins are visible not by ‘domain contrast’ but by ‘boundary contrast’, i.e. the twins appear in the topograph in form of X-ray kinematical diffraction contrast due to the lattice strain stemming from the impurity incorporation in the boundaries. The growth twins in Yb_xY_1−xAl₃(BO₃)₄ crystal are of inversion types, since no domain contrast was observed.     

Precipitation of In2O3 nano-crystallites from glasses in the system Na2O/B2O3/Al2O3/In2O3

Glasses in the system Na₂O/B₂O₃/Al₂O₃/In₂O₃ were melted and subsequently tempered in the range from 500 to 700 °C. Depending on the chemical composition, various crystalline phases were observed. From samples without Al₂O₃, In₂O₃ could not be crystallized from homogeneous glasses, because either spontaneous In₂O₃ crystallization occurred during cooling, or other phases such as NaInO₂ were formed during tempering. The addition of alumina, however, controlled the crystallization of In₂O₃. Depending on the crystallization temperature applied, the crystallite sizes were in the range from 13 to 53 nm. The glass matrix can be dissolved by soaking the powdered glass in water. This procedure can be used to prepare nano-crystalline In₂O₃-powders.     

As2S3 and AgI thin layers as ion sensitive membranes

The possibilities of using thin layers of As₂S₃ and AgI as ion sensitive membranes for ion selective field-effect transistors (ISFETs) are investigated. The thin films have been prepared by vacuum deposition on static and rotating substrates. The As₂S₃ layers were additionally doped with silver. The influence of the type of substrates and preparation conditions on electrochemical properties of the layers was studied. Electrochemical measurements revealed a reasonable sensitivity of chalcogenide and halide layers to silver and iodide ions, respectively. The near Nernstian behavior of sensitivity of As₂S₃ layers to Ag⁺ ions and of AgI layers to I⁻ ions is observed. The results obtained are promising for the development of ISFETs.